Showing 1–50 of 80 results for author: De Franceschi, S

Gate- and flux-tunable sin(2$\varphi$) Josephson element with proximitized Ge-based junctions

Authors: Axel Leblanc, Chotivut Tangchingchai, Zahra Sadre Momtaz, Elyjah Kiyooka, Jean-Michel Hartmann, Frederic Gustavo, Jean-Luc Thomassin, Boris Brun, Vivien Schmitt, Simon Zihlmann, Romain Maurand, Etienne Dumur, Silvano De Franceschi, Francois Lefloch

Abstract: Hybrid superconductor-semiconductor Josephson field-effect transistors (JoFETs) function as Josephson junctions with a gate-tunable critical current. Additionally, they can feature a non-sinusoidal current-phase relation (CPR) containing multiple harmonics of the superconducting phase difference, a so-far underutilized property. In this work, we exploit this multi-harmonicity to create a Josephson… ▽ More Hybrid superconductor-semiconductor Josephson field-effect transistors (JoFETs) function as Josephson junctions with a gate-tunable critical current. Additionally, they can feature a non-sinusoidal current-phase relation (CPR) containing multiple harmonics of the superconducting phase difference, a so-far underutilized property. In this work, we exploit this multi-harmonicity to create a Josephson circuit element with an almost perfectly $π$-periodic CPR, indicative of a largely dominant charge-4e supercurrent transport. Such a Josephson element was recently proposed as the basic building block of a protected superconducting qubit. Here, it is realized using a superconducting quantum interference device (SQUID) with low-inductance aluminum arms and two nominally identical JoFETs. The latter are fabricated from a SiGe/Ge/SiGe quantum-well heterostructure embedding a high-mobility two-dimensional hole gas. By carefully adjusting the JoFET gate voltages and finely tuning the magnetic flux through the SQUID close to half a flux quantum, we achieve a regime where the $\sin(2\varphi)$ component accounts for more than \SI{95}{\percent} of the total supercurrent. This result demonstrates a new promising route for the realization of superconducting qubits with enhanced coherence properties. △ Less

Submitted 17 June, 2024; v1 submitted 23 May, 2024; originally announced May 2024.

Variability mitigation in epitaxial-heterostructure-based spin qubit devices via gate layout optimization

Authors: Biel Martinez, Silvano de Franceschi, Yann-Michel Niquet

Abstract: The scalability of spin qubit devices is conditioned by qubit-to-qubit variability. Disorder in the host materials indeed affects the wave functions of the confined carriers, which leads to variations in their charge and spin properties. Charge disorder in the amorphous oxides is particularly detrimental owing to its long-range influence. Here we analyze the effects of charge traps at the semicond… ▽ More The scalability of spin qubit devices is conditioned by qubit-to-qubit variability. Disorder in the host materials indeed affects the wave functions of the confined carriers, which leads to variations in their charge and spin properties. Charge disorder in the amorphous oxides is particularly detrimental owing to its long-range influence. Here we analyze the effects of charge traps at the semiconductor/oxide interface, which are generally believed to play a dominant role in variability. We consider multiple random distributions of these interface traps and numerically calculate their impact on the chemical potentials, detuning and tunnel coupling of two adjacent quantum dots in SiGe heterostructure. Our results highlight the beneficial screening effect of the metal gates. The surface of the heterostructure shall, therefore, be covered as much as possible by the gates in order to limit variability. We propose an alternative layout with tip-shaped gates that maximizes the coverage of the semiconductor/oxide interface and outperforms the usual planar layout in some regimes. This highlights the importance of design in the management of device-to-device variability. △ Less

Submitted 29 February, 2024; originally announced February 2024.

From nonreciprocal to charge-4e supercurrents in Ge-based Josephson devices with tunable harmonic content

Authors: Axel Leblanc, Chotivut Tangchingchai, Zahra Sadre Momtaz, Elyjah Kiyooka, Jean-Michel Hartmann, Gonzalo Troncoso Fernandez-Bada, Boris Brun-Barriere, Vivien Schmitt, Simon Zihlmann, Romain Maurand, Étienne Dumur, Silvano De Franceschi, François Lefloch

Abstract: Hybrid superconductor(S)-semiconductor(Sm) devices bring a range of new functionalities into superconducting circuits. In particular, hybrid parity-protected qubits and Josephson diodes were recently proposed and experimentally demonstrated. Such devices leverage the non-sinusoidal character of the Josephson current-phase relation (CPR) in highly transparent S-Sm-S junctions. Here we report an exp… ▽ More Hybrid superconductor(S)-semiconductor(Sm) devices bring a range of new functionalities into superconducting circuits. In particular, hybrid parity-protected qubits and Josephson diodes were recently proposed and experimentally demonstrated. Such devices leverage the non-sinusoidal character of the Josephson current-phase relation (CPR) in highly transparent S-Sm-S junctions. Here we report an experimental study of superconducting quantum-interference devices (SQUIDs) embedding Josephson field-effect transistors fabricated from a SiGe/Ge/SiGe heterostructure grown on a 200-mm silicon wafer. The single-junction CPR shows up to three harmonics with gate tunable amplitude. In the presence of microwave irradiation, the ratio of the first two dominant harmonics, corresponding to single and double Cooper-pair transport processes, is consistently reflected in relative weight of integer and half-integer Shapiro steps. A combination of magnetic-flux and gate-voltage control enables tuning the SQUID functionality from a nonreciprocal Josephson-diode regime with 27% asymmetry to a $π$-periodic Josephson regime suitable for the implementation of parity-protected superconducting qubits. These results illustrate the potential of Ge-based hybrid devices as versatile and scalable building blocks of novel superconducting quantum circuits. △ Less

Submitted 26 November, 2023; originally announced November 2023.

Comments: 8 pages, 5 figures

Real-time milli-Kelvin thermometry in a semiconductor qubit architecture

Authors: Victor Champain, Vivien Schmitt, Benoit Bertrand, Heimanu Niebojewski, Romain Maurand, Xavier Jehl, Clemens Winkelmann, Silvano De Franceschi, Boris Brun

Abstract: We report local time-resolved thermometry in a silicon nanowire quantum dot device designed to host a linear array of spin qubits. Using two alternative measurement schemes based on rf reflectometry, we are able to probe either local electron or phonon temperatures with $μ$s-scale time resolution and a noise equivalent temperature of $3$ $\rm mK/\sqrt{\rm Hz}$. Following the application of short m… ▽ More We report local time-resolved thermometry in a silicon nanowire quantum dot device designed to host a linear array of spin qubits. Using two alternative measurement schemes based on rf reflectometry, we are able to probe either local electron or phonon temperatures with $μ$s-scale time resolution and a noise equivalent temperature of $3$ $\rm mK/\sqrt{\rm Hz}$. Following the application of short microwave pulses, causing local periodic heating, time-dependent thermometry can track the dynamics of thermal excitation and relaxation, revealing clearly different characteristic time scales. This work opens important prospects to investigate the out-of-equilibrium thermal properties of semiconductor quantum electronic devices operating at very low temperature. In particular, it may provide a powerful handle to understand heating effects recently observed in semiconductor spin-qubit systems. △ Less

Submitted 20 June, 2024; v1 submitted 24 August, 2023; originally announced August 2023.

Comments: 7 pages 4 figures (supp. mat. 6 pages and 5 figures)

Journal ref: Phys. Rev. Applied 21, 064039 (2024)

A new FDSOI spin qubit platform with 40nm effective control pitch

Authors: T. Bédécarrats, B. Cardoso Paz, B. Martinez Diaz, H. Niebojewski, B. Bertrand1, N. Rambal, C. Comboroure, A. Sarrazin, F. Boulard, E. Guyez, J. -M. Hartmann, Y. Morand, A. Magalhaes-Lucas, E. Nowak, E. Catapano, M. Cassé, M. Urdampilleta, Y. -M. Niquet, F. Gaillard, S. De Franceschi, T. Meunier, M. Vinet

Abstract: Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the QDs chemical potential (i.e. charge occupation of each QD) from the exchange interaction (i.e. tunnel barriers between each QD). We present here a novel Si quantum device integration that halves the effective gate pitch and provides… ▽ More Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the QDs chemical potential (i.e. charge occupation of each QD) from the exchange interaction (i.e. tunnel barriers between each QD). We present here a novel Si quantum device integration that halves the effective gate pitch and provides full controllability in 1D FDSOI QD arrays. The major advantages of this architecture are explored through numerical simulations. Functionality of the fabricated structure is validated via 300K statistical electrical characterization, while tunnel-coupling control is demonstrated at cryogenic temperature. △ Less

Submitted 7 April, 2023; originally announced April 2023.

Journal ref: 2021 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2021, pp. 1-4

RF simulation platform of qubit control using FDSOI technology for quantum computing

Authors: H. Jacquinot, R. Maurand, G. Troncoso Fernandez Bada, B. Bertrand, M. Cassé, Y. M. Niquet, S. de Franceschi, T. Meunier, M. Vinet

Abstract: In this paper, we report on simulations of an Electron Spin Resonance (ESR) RF control line for semiconductor electron spin qubits. The simulation includes both the ESR line characteristics (geometry and configuration, stack and material properties) and the electromagnetic (EM) environment at the vicinity of the qubits such as gates and interconnect network. With the accurate assessment of the mag… ▽ More In this paper, we report on simulations of an Electron Spin Resonance (ESR) RF control line for semiconductor electron spin qubits. The simulation includes both the ESR line characteristics (geometry and configuration, stack and material properties) and the electromagnetic (EM) environment at the vicinity of the qubits such as gates and interconnect network. With the accurate assessment of the magnetic and electric field distribution, we found that the EM environment of the qubits contributes significantly to the ESR line efficiency for spin control characterized by the magnetic over electric field ratio generated at the qubit location. △ Less

Submitted 7 April, 2023; originally announced April 2023.

Comments: 11 pages, 8 figures, Solid State Electronics (2022)

Quantum dynamics for energetic advantage in a charge-based classical full-adder

Authors: João P. Moutinho, Marco Pezzutto, Sagar Pratapsi, Francisco Ferreira da Silva, Silvano De Franceschi, Sougato Bose, António T. Costa, Yasser Omar

Abstract: We present a proposal for a one-bit full-adder to process classical information based on the quantum reversible dynamics of a triple quantum dot system. The device works via the repeated execution of a Fredkin gate implemented through the dynamics of a single time-independent Hamiltonian. Our proposal uses realistic parameter values and could be implemented on currently available quantum dot archi… ▽ More We present a proposal for a one-bit full-adder to process classical information based on the quantum reversible dynamics of a triple quantum dot system. The device works via the repeated execution of a Fredkin gate implemented through the dynamics of a single time-independent Hamiltonian. Our proposal uses realistic parameter values and could be implemented on currently available quantum dot architectures. We compare the estimated energy requirements for operating our full-adder with those of well-known fully classical devices, and argue that our proposal may provide a consistently better energy efficiency. Our work serves as a proof of principle for the development of energy-efficient information technologies operating through coherent quantum dynamics. △ Less

Submitted 29 July, 2022; v1 submitted 28 June, 2022; originally announced June 2022.

Comments: V2: Minor updates. -- Keywords: energy-efficient computing, quantum dynamics, quantum gates, semiconductor quantum dots, quantum technologies

Journal ref: PRX Energy 2, 033002 (2023)

Strong coupling between a photon and a hole spin in silicon

Authors: Cécile X. Yu, Simon Zihlmann, José C. Abadillo-Uriel, Vincent P. Michal, Nils Rambal, Heimanu Niebojewski, Thomas Bedecarrats, Maud Vinet, Etienne Dumur, Michele Filippone, Benoit Bertrand, Silvano De Franceschi, Yann-Michel Niquet, Romain Maurand

Abstract: Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout and long-range, on-chip connectivity, well beyond nearest-neighbor quantum interactions. Here we demonstrate strong coupling between a microwave photon in a supe… ▽ More Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout and long-range, on-chip connectivity, well beyond nearest-neighbor quantum interactions. Here we demonstrate strong coupling between a microwave photon in a superconducting resonator and a hole spin in a silicon-based double quantum dot issued from a foundry-compatible MOS fabrication process. By leveraging the strong spin-orbit interaction intrinsically present in the valence band of silicon, we achieve a spin-photon coupling rate as high as 330~MHz largely exceeding the combined spin-photon decoherence rate. This result, together with the recently demonstrated long coherence of hole spins in silicon, opens a new realistic pathway to the development of circuit quantum electrodynamics with spins in semiconductor quantum dots. △ Less

Submitted 9 May, 2023; v1 submitted 28 June, 2022; originally announced June 2022.

Comments: 7 pages, 4 figures of main text, 19 pages, 12 figures of supplementary material

Journal ref: Nature Nanotechnology 18, 741-746 (2023)

A single hole spin with enhanced coherence in natural silicon

Authors: N. Piot, B. Brun, V. Schmitt, S. Zihlmann, V. P. Michal, A. Apra, J. C. Abadillo-Uriel, X. Jehl, B. Bertrand, H. Niebojewski, L. Hutin, M. Vinet, M. Urdampilleta, T. Meunier, Y. -M. Niquet, R. Maurand, S. De Franceschi

Abstract: Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin-orbit qubit consisting of a single hole electrostatically confined in a… ▽ More Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin-orbit qubit consisting of a single hole electrostatically confined in a natural silicon metal-oxide-semiconductor device. By varying the magnetic field orientation, we reveal the existence of operation sweet spots where the impact of charge noise is minimized while preserving an efficient electric-dipole spin control. We correspondingly observe an extension of the Hahn-echo coherence time up to 88 $μ$s, exceeding by an order of magnitude the best reported values for hole-spin qubits, and approaching the state-of-the-art for electron spin qubits with synthetic spin-orbit coupling in isotopically-purified silicon. This finding largely enhances the prospects of silicon-based hole spin qubits for scalable quantum information processing. △ Less

Submitted 25 September, 2022; v1 submitted 21 January, 2022; originally announced January 2022.

Journal ref: Nature Nanotechnology 17, 1072-1077 (2022)

Spin-valley coupling anisotropy and noise in CMOS quantum dots

Authors: Cameron Spence, Bruna Cardoso Paz, Bernhard Klemt, Emmanuel Chanrion, David J. Niegemann, Baptiste Jadot, Vivien Thiney, Benoit Bertrand, Heimanu Niebojewski, Pierre-André Mortemousque, Xavier Jehl, Romain Maurand, Silvano De Franceschi, Maud Vinet, Franck Balestro, Christopher Bäuerle, Yann-Michel Niquet, Tristan Meunier, Matias Urdampilleta

Abstract: One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst maintaining high readout and gate fidelities. We demonstrate detection of a single electron spin using energy-selective readout in a CMOS-fabricated nanowire devi… ▽ More One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst maintaining high readout and gate fidelities. We demonstrate detection of a single electron spin using energy-selective readout in a CMOS-fabricated nanowire device with an integrated charge detector. We measure a valley splitting of 0.3 meV and 0.16 meV in two similar devices. The anisotropy of the spin-valley mixing is measured and shown to follow the dependence expected from the symmetry of the local confinement, indicating low disorder in the region of the quantum dot. Finally the charge noise in the spin-valley coupling regime is investigated and found to induce fluctuations in the qubit energy in the range of $0.6GHz/\sqrt{Hz}$. △ Less

Submitted 28 September, 2021; originally announced September 2021.

Comments: 4 figures

Compact gate-based read-out of multiplexed quantum devices with a cryogenic CMOS active inductor

Authors: L. Le Guevel, G. Billiot, S. De Franceschi, A. Morel, X. Jehl, A. G. M. Jansen, G. Pillonnet

Abstract: In the strive for scalable quantum processors, significant effort is being devoted to the development of cryogenic classical hardware for the control and readout of a growing number of qubits. Here we report on a cryogenic circuit incorporating a CMOS-based active inductor enabling fast impedance measurements with a sensitivity of 10 aF and an input-referred noise of 3.7 aF/sqrt(Hz). This type of… ▽ More In the strive for scalable quantum processors, significant effort is being devoted to the development of cryogenic classical hardware for the control and readout of a growing number of qubits. Here we report on a cryogenic circuit incorporating a CMOS-based active inductor enabling fast impedance measurements with a sensitivity of 10 aF and an input-referred noise of 3.7 aF/sqrt(Hz). This type of circuit is especially conceived for the readout of semiconductor spin qubits. As opposed to commonly used schemes based on dispersive rf reflectometry, which require mm-scale passive inductors, it allows for a markedly reduced footprint (50$μ$m $\times$ 60$μ$m), facilitating its integration in a scalable quantum-classical architecture. In addition, its active inductor results in a resonant circuit with tunable frequency and quality factor, enabling the optimization of readout sensitivity. △ Less

Submitted 9 February, 2021; v1 submitted 8 February, 2021; originally announced February 2021.

Comments: 19 pages, 21 figures

The 2021 Quantum Materials Roadmap

Authors: Feliciano Giustino, Jin Hong Lee, Felix Trier, Manuel Bibes, Stephen M Winter, Roser Valentí, Young-Woo Son, Louis Taillefer, Christoph Heil, Adriana I. Figueroa, Bernard Plaçais, QuanSheng Wu, Oleg V. Yazyev, Erik P. A. M. Bakkers, Jesper Nygård, Pol Forn-Diaz, Silvano De Franceschi, J. W. McIver, L. E. F. Foa Torres, Tony Low, Anshuman Kumar, Regina Galceran, Sergio O. Valenzuela, Marius V. Costache, Aurélien Manchon , et al. (4 additional authors not shown)

Abstract: In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topologi… ▽ More In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moire materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to shaping a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry. △ Less

Submitted 4 February, 2021; originally announced February 2021.

Comments: 93 pages, 27 figures

Journal ref: J. Phys. Mater. 3 042006 (2020)

Dispersively probed microwave spectroscopy of a silicon hole double quantum dot

Authors: Rami Ezzouch, Simon Zihlmann, Vincent P. Michal, Jing Li, Agostino Aprá, Benoit Bertrand, Louis Hutin, Maud Vinet, Matias Urdampilleta, Tristan Meunier, Xavier Jehl, Yann-Michel Niquet, Marc Sanquer, Silvano De Franceschi, Romain Maurand

Abstract: Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin qubit will have to be finely tuned and its operating conditions accurately determined. In this prospect, spectroscopic tools compatible with a scalable device layou… ▽ More Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin qubit will have to be finely tuned and its operating conditions accurately determined. In this prospect, spectroscopic tools compatible with a scalable device layout are of primary importance. Here we report a two-tone spectroscopy technique providing access to the spin-dependent energy-level spectrum of a hole double quantum dot defined in a split-gate silicon device. A first GHz-frequency tone drives electric-dipole spin resonance enabled by the valence-band spin-orbit coupling. A second lower-frequency tone (approximately 500 MHz) allows for dispersive readout via rf-gate reflectometry. We compare the measured dispersive response to the linear response calculated in an extended Jaynes-Cummings model and we obtain characteristic parameters such as g-factors and tunnel/spin-orbit couplings for both even and odd occupation. △ Less

Submitted 28 January, 2021; v1 submitted 31 December, 2020; originally announced December 2020.

Journal ref: Phys. Rev. Applied 16, 034031 (2021)

Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives

Authors: M. F. Gonzalez-Zalba, S. de Franceschi, E. Charbon, T. Meunier, M. Vinet, A. S. Dzurak

Abstract: Complementary metal-oxide semiconductor (CMOS) technology has radically reshaped the world by taking humanity to the digital age. Cramming more transistors into the same physical space has enabled an exponential increase in computational performance, a strategy that has been recently hampered by the increasing complexity and cost of miniaturization. To continue achieving significant gains in compu… ▽ More Complementary metal-oxide semiconductor (CMOS) technology has radically reshaped the world by taking humanity to the digital age. Cramming more transistors into the same physical space has enabled an exponential increase in computational performance, a strategy that has been recently hampered by the increasing complexity and cost of miniaturization. To continue achieving significant gains in computing performance, new computing paradigms, such as quantum computing, must be developed. However, finding the optimal physical system to process quantum information, and scale it up to the large number of qubits necessary to build a general-purpose quantum computer, remains a significant challenge. Recent breakthroughs in nanodevice engineering have shown that qubits can now be manufactured in a similar fashion to silicon field-effect transistors, opening an opportunity to leverage the know-how of the CMOS industry to address the scaling challenge. In this article, we focus on the analysis of the scaling prospects of quantum computing systems based on CMOS technology. △ Less

Submitted 8 April, 2023; v1 submitted 23 November, 2020; originally announced November 2020.

Comments: Comments welcome

Journal ref: Nature Electronics 4, 872, 2021

Semiconductor Qubits In Practice

Authors: Anasua Chatterjee, Paul Stevenson, Silvano De Franceschi, Andrea Morello, Nathalie de Leon, Ferdinand Kuemmeth

Abstract: In recent years semiconducting qubits have undergone a remarkable evolution, making great strides in overcoming decoherence as well as in prospects for scalability, and have become one of the leading contenders for the development of large-scale quantum circuits. In this Review we describe the current state of the art in semiconductor charge and spin qubits based on gate-controlled semiconductor q… ▽ More In recent years semiconducting qubits have undergone a remarkable evolution, making great strides in overcoming decoherence as well as in prospects for scalability, and have become one of the leading contenders for the development of large-scale quantum circuits. In this Review we describe the current state of the art in semiconductor charge and spin qubits based on gate-controlled semiconductor quantum dots, shallow dopants, and color centers in wide band gap materials. We frame the relative strengths of the different semiconductor qubit implementations in the context of quantum simulations, computing, sensing and networks. By highlighting the status and future perspectives of the basic types of semiconductor qubits, this Review aims to serve as a technical introduction for non-specialists as well as a forward-looking reference for scientists intending to work in this field. △ Less

Submitted 13 May, 2020; originally announced May 2020.

Comments: Review article, feedback welcome, 27 pages, 5 figures

Report number: NBI QDEV 2020

Journal ref: Nature Reviews Physics (2021)

The germanium quantum information route

Authors: Giordano Scappucci, Christoph Kloeffel, Floris A. Zwanenburg, Daniel Loss, Maksym Myronov, Jian-Jun Zhang, Silvano De Franceschi, Georgios Katsaros, Menno Veldhorst

Abstract: In the worldwide endeavor for disruptive quantum technologies, germanium is emerging as a versatile material to realize devices capable of encoding, processing, or transmitting quantum information. These devices leverage special properties of the germanium valence-band states, commonly known as holes, such as their inherently strong spin-orbit coupling and the ability to host superconducting pairi… ▽ More In the worldwide endeavor for disruptive quantum technologies, germanium is emerging as a versatile material to realize devices capable of encoding, processing, or transmitting quantum information. These devices leverage special properties of the germanium valence-band states, commonly known as holes, such as their inherently strong spin-orbit coupling and the ability to host superconducting pairing correlations. In this Review, we initially introduce the physics of holes in low-dimensional germanium structures with key insights from a theoretical perspective. We then examine the material science progress underpinning germanium-based planar heterostructures and nanowires. We review the most significant experimental results demonstrating key building blocks for quantum technology, such as an electrically driven universal quantum gate set with spin qubits in quantum dots and superconductor-semiconductor devices for hybrid quantum systems. We conclude by identifying the most promising prospects toward scalable quantum information processing. △ Less

Submitted 17 April, 2020; originally announced April 2020.

Journal ref: Nat Rev Mater (2020)

Charge detection in an array of CMOS quantum dots

Authors: Emmanuel Chanrion, David J. Niegemann, Benoit Bertrand, Cameron Spence, Baptiste Jadot, Jing Li, Pierre-André Mortemousque, Louis Hutin, Romain Maurand, Xavier Jehl, Marc Sanquer, Silvano De Franceschi, Christopher Bäuerle, Franck Balestro, Yann-Michel Niquet, Maud Vinet, Tristan Meunier, Matias Urdampilleta

Abstract: The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open question. One of the main challenge resides in the detection of charges within the array. It is a prerequisite functionality to initialize a desired charge state an… ▽ More The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open question. One of the main challenge resides in the detection of charges within the array. It is a prerequisite functionality to initialize a desired charge state and readout spins through spin-to-charge conversion mechanisms. In this paper, we use two methods based on either a single-lead charge detector, or a reprogrammable single electron transistor. Thanks to these methods, we study the charge dynamics and sensitivity by performing single shot detection of the charge. Finally, we can probe the charge stability at any node of a linear array and assess the Coulomb disorder in the structure. We find an electrochemical potential fluctuation induced by charge noise comparable to that reported in other silicon quantum dots. △ Less

Submitted 3 April, 2020; v1 submitted 2 April, 2020; originally announced April 2020.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. Applied 14, 024066 (2020)

28nm Fully-Depleted SOI Technology: Cryogenic Control Electronics for Quantum Computing

Authors: H. Bohuslavskyi, S. Barraud, M. Cassé, V. Barral, B. Bertrand, L. Hutin, F. Arnaud, P. Galy, M. Sanquer, S. De Franceschi, M. Vinet

Abstract: This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent $V_{TH}$ controllability. Low-temperature operation enables higher d… ▽ More This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent $V_{TH}$ controllability. Low-temperature operation enables higher drive current and a largely reduced subthreshold swing (down to 7mV/dec). FDSOI can provide a valuable approach to cryogenic low-power electronics. Applications such as classical control hardware for quantum processors are envisioned. △ Less

Submitted 20 December, 2019; originally announced February 2020.

Journal ref: 2017 Silicon Nanoelectronics Workshop (SNW), Kyoto, 2017, pp. 143-144

All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Authors: Léo Bourdet, Louis Hutin, Benoit Bertrand, Andrea Corna, Heorhii Bohuslavskyi, Anthony Amisse, Alessandro Crippa, Romain Maurand, Sylvain Barraud, Matias Urdampilleta, Christopher Bäuerle, Tristan Meunier, Marc Sanquer, Xavier Jehl, Silvano De Franceschi, Yann-Michel Niquet, Maud Vinet

Abstract: We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically-addressable valle… ▽ More We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically-addressable valley configuration and a protected spin configuration. This proposed scheme bears relevance to improve the trade-off between fast operations and slow decoherence for quantum computing on a Si qubit platform. Finally, we evoke the impact of process-induced variability on the operating bias range. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Comments: arXiv admin note: substantial text overlap with arXiv:1912.09806

Journal ref: IEEE Transactions on Electron Devices ( Volume: 65 , Issue: 11 , Nov. 2018 )

Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

Authors: L. Hutin, B. Bertrand, E. Chanrion, H. Bohuslavskyi, F. Ansaloni, T. -Y. Yang, J. Michniewicz, D. J. Niegemann, C. Spence, T. Lundberg, A. Chatterjee, A. Crippa, J. Li, R. Maurand, X. Jehl, M. Sanquer, M. F. Gonzalez-Zalba, F. Kuemmeth, Y. -M. Niquet, S. De Franceschi, M. Urdampilleta, T. Meunier, M. Vinet

Abstract: We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spindependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent qua… ▽ More We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spindependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundrycompatible Si MOS spin qubits. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Journal ref: 2019 IEEE International Electron Devices Meeting (IEDM)

Towards scalable silicon quantum computing

Authors: M. Vinet, L. Hutin, B. Bertrand, S. Barraud, J. -M. Hartmann, Y. -J. Kim, V. Mazzocchi, A. Amisse, H. Bohuslavskyi, L. Bourdet, A. Crippa, X. Jehl, R. Maurand, Y. -M. Niquet, M. Sanquer, B. Venitucci, B. Jadot, E. Chanrion, P. -A. Mortemousque, C. Spence, M. Urdampilleta, S. De Franceschi, T. Meunier

Abstract: We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures. We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Journal ref: 2018 IEEE International Electron Devices Meeting (IEDM)

All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Authors: L. Hutin, L. Bourdet, B. Bertrand, A. Corna, H. Bohuslavskyi, A. Amisse, A. Crippa, R. Maurand, S. Barraud, M. Urdampilleta, C. Bäuerle, T. Meunier, M. Sanquer, X. Jehl, S. De Franceschi, Y. -M. Niquet, M. Vinet

Abstract: We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI devices enables switching a quantum bit (qubit) between an electrically-addressable, yet charge noise-sensitive configuration, and a protected config… ▽ More We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI devices enables switching a quantum bit (qubit) between an electrically-addressable, yet charge noise-sensitive configuration, and a protected configuration. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Journal ref: 2018 IEEE Symposium on VLSI Technology

Si CMOS Platform for Quantum Information Processing

Authors: L. Hutin, R. Maurand, D. Kotekar-Patil, A. Corna, H. Bohuslavskyi, X. Jehl, S. Barraud, S. De Franceschi, M. Sanquer, M. Vinet

Abstract: We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of freedom of a hole Quantum Dot defined by one of the Gates. Coherent spin manipulation is performed by means of an RF E-Field signal applied to the Gate itself. We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of freedom of a hole Quantum Dot defined by one of the Gates. Coherent spin manipulation is performed by means of an RF E-Field signal applied to the Gate itself. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Journal ref: 2016 IEEE Symposium on VLSI Technology

Control of single spin in CMOS devices and its application for quantum bits

Authors: R. Maurand, D. Kotekar-Patil, A. Corna, H. Bohuslavskyi, A. Crippa, R. Laviéville, L. Hutin, S. Barraud, M. Vinet, S. De Franceschi, X. Jehl, M. Sanquer

Abstract: We show how to measure and manipulate a single spin in a CMOS device fabricated in a pre-industrial 300 mm CMOS foundry. The device can be used as a spin quantum bit working at very low temperature. The spin manipulation is done by a microwave electric field applied directly on a gate. The presented results are a proof-of-principle demonstration of the possibility to define qubits by means of conv… ▽ More We show how to measure and manipulate a single spin in a CMOS device fabricated in a pre-industrial 300 mm CMOS foundry. The device can be used as a spin quantum bit working at very low temperature. The spin manipulation is done by a microwave electric field applied directly on a gate. The presented results are a proof-of-principle demonstration of the possibility to define qubits by means of conventional industrial fabrication processes. △ Less

Submitted 19 December, 2019; originally announced December 2019.

Comments: Published in "Emerging Devices for Low-Power and High-Performance Nanosystems; Physics, Novel Functions, and Data Processing" Edited by Simon Deleonibus, Pan Stanford Publisher 2018

SOI technology for quantum information processing

Authors: S. De Franceschi, L. Hutin, R. Maurand, L. Bourdet, H. Bohuslavskyi, A. Corna, D. Kotekar-Patil, S. Barraud, X. Jehl, Y. -M. Niquet, M. Sanquer, M. Vinet

Abstract: We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information - so-called qubits - are encoded in the spin degree of freedom of gate-confined holes in p-type devices. We show how a hole-spin can be efficiently manipulated by… ▽ More We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information - so-called qubits - are encoded in the spin degree of freedom of gate-confined holes in p-type devices. We show how a hole-spin can be efficiently manipulated by means of a microwave excitation applied to the corresponding confining gate. The hole spin state can be read out and reinitialized through a Pauli blockade mechanism. The studied devices are derived from silicon nanowire field-effect transistors. We discuss their prospects for scalability and, more broadly, the potential advantages of FDSOI technology. △ Less

Submitted 17 December, 2019; originally announced December 2019.

Comments: 4 pages, 13 figures, Invited contribution at IEDM 2016

Journal ref: 2016 IEEE International Electron Devices Meeting (IEDM), 13.4. 1-13.4. 4

Cryogenic characterization of 28nm FD-SOI ring oscillators with energy efficiency optimization

Authors: H. Bohuslavskyi, S. Barraud, V. Barral, M. Cassé, L. Le Guevel, L. Hutin, B. Bertrand, A. Crippa, X. Jehl, G. Pillonnet, A. G. M. Jansen, F. Arnaud, P. Galy, R. Maurand, S. De Franceschi, M. Sanquer, M. Vinet

Abstract: Extensive electrical characterization of ring oscillators (ROs) made in high-$κ$ metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of temperatures between 296 and 4.3K. First, delay per stage ($τ_P$), static current ($I_{STAT}$), and dynamic current ($I_{DYN}$) are analyzed for the case of the increase of threshold voltage ($V_{TH}$) observed at low te… ▽ More Extensive electrical characterization of ring oscillators (ROs) made in high-$κ$ metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of temperatures between 296 and 4.3K. First, delay per stage ($τ_P$), static current ($I_{STAT}$), and dynamic current ($I_{DYN}$) are analyzed for the case of the increase of threshold voltage ($V_{TH}$) observed at low temperature. Then, the same analysis is performed by compensating $V_{TH}$ to a constant, temperature independent value through forward body-biasing (FBB). Energy efficiency optimization is proposed for different supply voltages ($V_{DD}$) in order to find an optimal operating point combining both high RO frequencies and low power dissipation. We show that the Energy-Delay product ($EDP$) can be significantly reduced at low temperature by applying a forward body bias voltage ($V_{FBB}$). We demonstrate that outstanding performance of RO in terms of speed ($τ_P$=37ps) and static power (7nA/stage) can be achieved at 4.3K with $V_{DD}$ reduced down to 0.325V. △ Less

Submitted 14 March, 2019; originally announced March 2019.

Journal ref: IEEE Transactions on Electron Devices ( Volume: 65 , Issue: 9 , Sept. 2018 )

Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs described with Band Broadening

Authors: H. Bohuslavskyi, A. G. M. Jansen, S. Barraud, V. Barral, M. Cassé, L. Le Guevel, X. Jehl, L. Hutin, B. Bertrand, G. Billiot, G. Pillonnet, F. Arnaud, P. Galy, S. De Franceschi, M. Vinet, M. Sanquer

Abstract: In the standard MOSFET description of the drain current $I_{D}$ as a function of applied gate voltage $V_{GS}$, the subthreshold swing $SS(T)\equiv dV_{GS}/d\log I_{D}$ has a fundamental lower limit as a function of temperature $T$ given by $SS(T) = \ln10~k_BT/e$. However, recent low-temperature studies of different advanced CMOS technologies have reported $SS$(4K or lower) values that are at leas… ▽ More In the standard MOSFET description of the drain current $I_{D}$ as a function of applied gate voltage $V_{GS}$, the subthreshold swing $SS(T)\equiv dV_{GS}/d\log I_{D}$ has a fundamental lower limit as a function of temperature $T$ given by $SS(T) = \ln10~k_BT/e$. However, recent low-temperature studies of different advanced CMOS technologies have reported $SS$(4K or lower) values that are at least an order of magnitude larger. Here, we present and analyze the saturation of $SS(T)$ in 28nm fully-depleted silicon-on-insulator (FD-SOI) devices for both n- and p-type MOSFETs of different gate oxide thicknesses and gate lengths down to 4K. Until now, the increase of interface-trap density close to the band edge as temperature decreases has been put forward to understand the saturation. Here, an original explanation of the phenomenon is presented by considering a disorder-induced tail in the density of states at the conduction (valence) band edge for the calculation of the MOS channel transport by applying Fermi-Dirac statistics. This results in a subthreshold $I_{D}\sim e^{eV_{GS}/k_BT_0}$ for $T_0=35$K with saturation value $SS(T<T_0) = \ln 10~k_BT_0/e$. The proposed model adequately describes the experimental data of $SS(T)$ from 300 down to 4K using $k_BT_0 \simeq 3$meV for the width of the exponential tail and can also accurately describe $SS(I_{D})$ within the whole subthreshold region. Our analysis allows a direct determination of the technology-dependent band-tail extension forming a crucial element in future compact modeling and design of cryogenic circuits. △ Less

Submitted 13 March, 2019; originally announced March 2019.

Journal ref: IEEE Electron Device Letters, 5 March 2019

Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon

Authors: A. Crippa, R. Ezzouch, A. Aprá, A. Amisse, L. Houtin, B. Bertrand, M. Vinet, M. Urdampilleta, T. Meunier, M. Sanquer, X. Jehl, R. Maurand, S. De Franceschi

Abstract: Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the implementation of gate-coupled rf reflectometry for the dispersive readout of a fully functional spin qubit device. We use a p-type double-gate transistor made using i… ▽ More Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the implementation of gate-coupled rf reflectometry for the dispersive readout of a fully functional spin qubit device. We use a p-type double-gate transistor made using industry-standard silicon technology. The first gate confines a hole quantum dot encoding the spin qubit, the second one a helper dot enabling readout. The qubit state is measured through the phase response of a lumped-element resonator to spin-selective interdot tunneling. The demonstrated qubit readout scheme requires no coupling to a Fermi reservoir, thereby offering a compact and potentially scalable solution whose operation may be extended above 1\,K. △ Less

Submitted 2 July, 2019; v1 submitted 11 November, 2018; originally announced November 2018.

Journal ref: Nature Communications 10, 2776 (2019)

Germanium quantum well Josephson field effect transistors and interferometers

Authors: Florian Vigneau, Raisei Mizokuchi, Dante Colao Zanuz, XuHai Huang, Susheng Tan, Romain Maurand, Sergey Frolov, Amir Sammak, Giordano Scappucci, François Lefloch, Silvano De Franceschi

Abstract: Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve to the realization of topological superconducting systems, as well as gate-tunable superconducting quantum bits. Here we combine a SiGe/Ge/SiGe quantum-well heterostructure hosting high-mobility two-dimensional holes and aluminum supe… ▽ More Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve to the realization of topological superconducting systems, as well as gate-tunable superconducting quantum bits. Here we combine a SiGe/Ge/SiGe quantum-well heterostructure hosting high-mobility two-dimensional holes and aluminum superconducting leads to realize prototypical hybrid devices, such as Josephson field-effect transistors (JoFETs) and superconducting quantum interference devices (SQUIDs). We observe gate-controlled supercurrent transport with Ge channels as long as one micrometer and estimate the induced superconducting gap from tunnel spectroscopy measurements in superconducting point-contact devices. Transmission electron microscopy reveals the diffusion of Ge into the aluminum contacts, whereas no aluminum is detected in the Ge channel. △ Less

Submitted 23 October, 2018; v1 submitted 11 October, 2018; originally announced October 2018.

Characterization and Modeling of 28-nm FDSOI CMOS Technology down to Cryogenic Temperatures

Authors: Arnout Beckers, Farzan Jazaeri, Heorhii Bohuslavskyi, Louis Hutin, Silvano De Franceschi, Christian Enz

Abstract: This paper presents an extensive characterization and modeling of a commercial 28-nm FDSOI CMOS process operating down to cryogenic temperatures. The important cryogenic phenomena influencing this technology are discussed. The low-temperature transfer characteristics including body-biasing are modeled over a wide temperature range (room temperature down to 4.2\,K) using the design-oriented simplif… ▽ More This paper presents an extensive characterization and modeling of a commercial 28-nm FDSOI CMOS process operating down to cryogenic temperatures. The important cryogenic phenomena influencing this technology are discussed. The low-temperature transfer characteristics including body-biasing are modeled over a wide temperature range (room temperature down to 4.2\,K) using the design-oriented simplified-EKV model. The trends of the free-carrier mobilities versus temperature in long and short-narrow devices are extracted from dc measurements down to 1.4\,K and 4.2\,K respectively, using a recently-proposed method based on the output conductance. A cryogenic-temperature-induced mobility degradation is observed on long pMOS, leading to a maximum hole mobility around 77\,K. This work sets the stage for preparing industrial design kits with physics-based cryogenic compact models, a prerequisite for the successful co-integration of FDSOI CMOS circuits with silicon qubits operating at deep-cryogenic temperatures. △ Less

Submitted 24 September, 2018; originally announced September 2018.

Gate-Based High Fidelity Spin Read-out in a CMOS Device

Authors: Matias Urdampilleta, David J. Niegemann, Emmanuel Chanrion, Baptiste Jadot, Cameron Spence, Pierre-André Mortemousque, 1 Christopher Bäuerle, Louis Hutin, Benoit Bertrand, Sylvain Barraud, Romain Maurand, Marc Sanquer, Xavier Jehl, Silvano De Franceschi, Maud Vinet, Tristan Meunier

Abstract: The engineering of electron spin qubits in a compact unit cell embedding all quantum functionalities is mandatory for large scale integration. In particular, the development of a high-fidelity and scalable spin readout method remains an open challenge. Here we demonstrate high-fidelity and robust spin readout based on gate reflectometry in a CMOS device comprising one qubit dot and one ancillary d… ▽ More The engineering of electron spin qubits in a compact unit cell embedding all quantum functionalities is mandatory for large scale integration. In particular, the development of a high-fidelity and scalable spin readout method remains an open challenge. Here we demonstrate high-fidelity and robust spin readout based on gate reflectometry in a CMOS device comprising one qubit dot and one ancillary dot coupled to an electron reservoir to perform readout. This scalable method allows us to read out a spin with a fidelity above 99% for 1 ms integration time. To achieve such fidelity, we exploit a latched spin blockade mechanism that requires electron exchange between the ancillary dot and the reservoir. We show that the demonstrated high read-out fidelity is fully preserved up to 0.5 K. This results holds particular relevance for the future co-integration of spin qubits and classical control electronics. △ Less

Submitted 12 September, 2018; originally announced September 2018.

Comments: 6 pages, 4 figures

Design-oriented Modeling of 28 nm FDSOI CMOS Technology down to 4.2 K for Quantum Computing

Authors: Arnout Beckers, Farzan Jazaeri, Heorhii Bohuslavskyi, Louis Hutin, Silvano De Franceschi, Christian Enz

Abstract: In this paper a commercial 28-nm FDSOI CMOS technology is characterized and modeled from room temperature down to 4.2 K. Here we explain the influence of incomplete ionization and interface traps on this technology starting from the fundamental device physics. We then illustrate how these phenomena can be accounted for in circuit device-models. We find that the design-oriented simplified EKV model… ▽ More In this paper a commercial 28-nm FDSOI CMOS technology is characterized and modeled from room temperature down to 4.2 K. Here we explain the influence of incomplete ionization and interface traps on this technology starting from the fundamental device physics. We then illustrate how these phenomena can be accounted for in circuit device-models. We find that the design-oriented simplified EKV model can accurately predict the impact of the temperature reduction on the transfer characteristics, back-gate sensitivity, and transconductance efficiency. The presented results aim at extending industry-standard compact models to cryogenic temperatures for the design of cryo- CMOS circuits implemented in a 28 nm FDSOI technology. △ Less

Submitted 16 August, 2018; originally announced August 2018.

Comments: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

Journal ref: IEEE EUROSOI-ULIS (2018) 1-4

Ballistic one-dimensional holes with strong g-factor anisotropy in germanium

Authors: R. Mizokuchi, R. Maurand, F. Vigneau, M. Myronov, S. De Franceschi

Abstract: We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we observe conductance plateaus at integer multiples of 2e^2/h. At finite magnetic field, the splitting of these plateaus by Zeeman effect reveals largely anisotropic g-factors, with absolute values below 1 in the quantum-well pl… ▽ More We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we observe conductance plateaus at integer multiples of 2e^2/h. At finite magnetic field, the splitting of these plateaus by Zeeman effect reveals largely anisotropic g-factors, with absolute values below 1 in the quantum-well plane, and exceeding 10 out of plane. This g-factor anisotropy is consistent with a heavy-hole character of the propagating valence-band states, in line with a predominant confinement in the growth direction. Remarkably, we observe quantized ballistic conductance in device channels up to 600 nm long. These findings mark an important step towards the realization of novel devices for applications in quantum spintronics. △ Less

Submitted 12 April, 2018; originally announced April 2018.

Supercurrent through a spin-split quasi-ballistic point contact in an InAs nanowire

Authors: J. C. Estrada Saldaña, R. Žitko, J. P. Cleuziou, E. J. H. Lee, V. Zannier, D. Ercolani, L. Sorba, R. Aguado, S. De Franceschi

Abstract: We study the superconducting proximity effect in an InAs nanowire contacted by Ta-based superconducting electrodes. Using local bottom gates, we control the potential landscape along the nanowire, tuning its conductance to a quasi-ballistic regime. At high magnetic field ($B$), we observe approximately quantized conductance plateaus associated with the first two spin-polarized one-dimensional mode… ▽ More We study the superconducting proximity effect in an InAs nanowire contacted by Ta-based superconducting electrodes. Using local bottom gates, we control the potential landscape along the nanowire, tuning its conductance to a quasi-ballistic regime. At high magnetic field ($B$), we observe approximately quantized conductance plateaus associated with the first two spin-polarized one-dimensional modes. For $B < 1$ T, the onset of superconductivity occurs in concomitance with the development of sizeable charge localization leading to a 0.7-type conductance anomaly. In this regime, the proximity supercurrent exhibits an unusual, non-monotonic $B$ dependence. We interpret this finding in terms of a competition between the Kondo effect, dominating near $B=0$, and the Zeeman effect, enforcing spin polarization and the emergence of a $π$ phase shift in the Josephson relation at higher $B$. △ Less

Submitted 5 January, 2018; originally announced January 2018.

Electrical spin driving by $g$-matrix modulation in spin-orbit qubits

Authors: Alessandro Crippa, Romain Maurand, Léo Bourdet, Dharmraj Kotekar-Patil, Anthony Amisse, Xavier Jehl, Marc Sanquer, Romain Laviéville, Heorhii Bohuslavskyi, Louis Hutin, Sylvain Barraud, Maud Vinet, Yann-Michel Niquet, Silvano De Franceschi

Abstract: In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency as well as the gate-… ▽ More In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency as well as the gate-voltage dependence and anisotropy of the hole $g$-factors. We show that a $g$-matrix formalism can simultaneously capture and discriminate the contributions of two mechanisms so far independently discussed in the literature: one associated with the modulation of the $g$ factors, and measurable by Zeeman energy spectroscopy, the other not. Our approach has a general validity and can be applied to the analysis of other types of spin-orbit qubits. △ Less

Submitted 4 April, 2018; v1 submitted 24 October, 2017; originally announced October 2017.

Comments: Letter format (4 pages, 4 figures). Detailed theory in Supplemenatl Material

Journal ref: Phys. Rev. Lett. 120, 137702 (2018)

Split-Channel Ballistic Transport in an InSb Nanowire

Authors: J. C. Estrada Saldaña, Y. M. Niquet, J. P. Cleuziou, E. J. H. Lee, D. Car, S. R. Plissard, E. P. A. M. Bakkers, S. De Franceschi

Abstract: We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. Three bottom gates are used to locally deplete the nanowire creating a ballistic quantum point contact with only a few conducting channels. In a magnetic field, the Zeeman splitting of the corresponding 1D subbands is revealed by the emergence of conductance plateaus at multiples of… ▽ More We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. Three bottom gates are used to locally deplete the nanowire creating a ballistic quantum point contact with only a few conducting channels. In a magnetic field, the Zeeman splitting of the corresponding 1D subbands is revealed by the emergence of conductance plateaus at multiples of $e^2$/h, yet we find a quantized conductance pattern largely dependent on the configuration of voltages applied to the bottom gates. In particular, we can make the first plateau disappear leaving a first conductance step of 2$e^2/h$, which is indicative of a remarkable two-fold subband degeneracy that can persist up to several Tesla. For certain gate voltage settings, we also observe the presence of discrete resonant states producing conductance features that can resemble those expected from the opening of a helical gap in the subband structure. We explain our experimental findings through the formation of two spatially separated 1D conduction channels. △ Less

Submitted 9 March, 2018; v1 submitted 8 September, 2017; originally announced September 2017.

Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot

Authors: Andrea Corna, Léo Bourdet, Romain Maurand, Alessandro Crippa, Dharmraj Kotekar-Patil, Heorhii Bohuslavskyi, Romain Lavieville, Louis Hutin, Sylvain Barraud, Xavier Jehl, Maud Vinet, Silvano De Franceschi, Yann-Michel Niquet, Marc Sanquer

Abstract: The ability to manipulate electron spins with voltage-dependent electric fields is key to the operation of quantum spintronics devices, such as spin-based semiconductor qubits. A natural approach to electrical spin control exploits the spin-orbit coupling (SOC) inherently present in all materials. So far, this approach could not be applied to electrons in silicon, due to their extremely weak SOC.… ▽ More The ability to manipulate electron spins with voltage-dependent electric fields is key to the operation of quantum spintronics devices, such as spin-based semiconductor qubits. A natural approach to electrical spin control exploits the spin-orbit coupling (SOC) inherently present in all materials. So far, this approach could not be applied to electrons in silicon, due to their extremely weak SOC. Here we report an experimental realization of electrically driven electron-spin resonance in a silicon-on-insulator (SOI) nanowire quantum dot device. The underlying driving mechanism results from an interplay between SOC and the multi-valley structure of the silicon conduction band, which is enhanced in the investigated nanowire geometry. We present a simple model capturing the essential physics and use tight-binding simulations for a more quantitative analysis. We discuss the relevance of our findings to the development of compact and scalable electron-spin qubits in silicon. △ Less

Submitted 7 February, 2018; v1 submitted 9 August, 2017; originally announced August 2017.

Journal ref: npj Quantum Information, 4(1), 6 (2018)

Hole weak anti-localization in a strained-Ge surface quantum well

Authors: R. Mizokuchi, P. Torresani, R. Maurand, M. Myronov, S. De Franceschi

Abstract: We report a magneto-transport study of a two-dimensional hole gas confined to a strained Ge quantum well grown on a relaxed Si0.2Ge0.8 virtual substrate. The conductivity of the hole gas measured as a function of a perpendicular magnetic field exhibits a zero-field peak resulting from weak anti-localization. The peak develops and becomes stronger upon increasing the hole density by means of a top… ▽ More We report a magneto-transport study of a two-dimensional hole gas confined to a strained Ge quantum well grown on a relaxed Si0.2Ge0.8 virtual substrate. The conductivity of the hole gas measured as a function of a perpendicular magnetic field exhibits a zero-field peak resulting from weak anti-localization. The peak develops and becomes stronger upon increasing the hole density by means of a top gate electrode. This behavior is consistent with a Rashba-type spin-orbit coupling whose strength is proportional to the perpendicular electric field, and hence to the carrier density. By fitting the weak anti-localization peak to a model including a dominant cubic spin-orbit coupling, we extract the characteristic transport time scales and a spin splitting energy of ~1 meV. Finally, we observe a weak anti-localization peak also for magnetic fields parallel to the quantum well and attribute this finding to a combined effect of surface roughness, Zeeman splitting, and virtual occupation of higher-energy hole subbands. △ Less

Submitted 12 April, 2017; v1 submitted 10 April, 2017; originally announced April 2017.

Level spectrum and charge relaxation in a silicon double quantum dot probed by dual-gate reflectometry

Authors: Alessandro Crippa, Romain Maurand, Dharmraj Kotekar-Patil, Andrea Corna, Heorhii Bohuslavskyi, Alexei O. Orlov, Patrick Fay, Romain Laviéville, Silvain Barraud, Maud Vinet, Marc Sanquer, Silvano De Franceschi, Xavier Jehl

Abstract: We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively connected to the two gate electrodes. By simultaneously measuring their dispersive response, we obtain the complete charge stability diagram of the device. Char… ▽ More We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively connected to the two gate electrodes. By simultaneously measuring their dispersive response, we obtain the complete charge stability diagram of the device. Charge transitions between the two quantum dots and between each quantum dot and either the source or the drain contact are detected through phase shifts in the reflected radio-frequency signals. At finite bias, reflectometry allows probing charge transitions to excited quantum-dot states thereby enabling direct access to the energy level spectra of the quantum dots. Interestingly, we find that in the presence of charge transport across the two dots the reflectometry signatures of interdot transitions display a dip-peak structure containing quantitative information on the charge relaxation rates in the double quantum dot. △ Less

Submitted 19 January, 2017; v1 submitted 12 October, 2016; originally announced October 2016.

Comments: 7 pages, 4 figures

Scaling of sub-gap excitations in a superconductor-semiconductor nanowire quantum dot

Authors: Eduardo J. H. Lee, Xiaocheng Jiang, Rok Zitko, Ramon Aguado, Charles M. Lieber, Silvano De Franceschi

Abstract: A quantum dot coupled to a superconducting contact provides a tunable artificial analogue of a magnetic atom in a superconductor, a paradigmatic quantum impurity problem. We realize such a system with an InAs semiconductor nanowire contacted by an Al-based superconducting electrode. We use an additional normal-type contact as weakly coupled tunnel probe to perform tunneling spectroscopy measuremen… ▽ More A quantum dot coupled to a superconducting contact provides a tunable artificial analogue of a magnetic atom in a superconductor, a paradigmatic quantum impurity problem. We realize such a system with an InAs semiconductor nanowire contacted by an Al-based superconducting electrode. We use an additional normal-type contact as weakly coupled tunnel probe to perform tunneling spectroscopy measurements of the elementary sub-gap excitations, known as Andreev bound states or Yu-Shiba-Rusinov states. We demonstrate that the energy of these states, $ζ$, scales with the ratio between the Kondo temperature, $T_K$, and the superconducting gap, $Δ$. $ζ$ vanishes for $T_K/Δ\approx 0.6$, denoting a quantum phase transition between spin singlet and doublet ground states. By further leveraging the gate control over the quantum dot parameters, we determine the singlet-doublet phase boundary in the stability diagram of the system. Our experimental results show remarkable quantitative agreement with numerical renormalization group calculations. △ Less

Submitted 24 September, 2016; originally announced September 2016.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. B 95, 180502 (2017)

Pauli Blockade in a Few-Hole PMOS Double Quantum Dot limited by Spin-Orbit Interaction

Authors: Heorhii Bohuslavskyi, Dharmraj Kotekar-Patil, Romain Maurand, Andrea Corna, Sylvain Barraud, Leo Bourdet, Louis Hutin, Yann-Michel Niquet, Xavier Jehl, Silvano De Franceschi, Maud Vinet, Marc Sanquer

Abstract: We report on hole compact double quantum dots fabricated using conventional CMOS technology. We provide evidence of Pauli spin blockade in the few hole regime which is relevant to spin qubit implementations. A current dip is observed around zero magnetic field, in agreement with the expected behavior for the case of strong spin-orbit. We deduce an intradot spin relaxation rate $\approx$120\,kHz… ▽ More We report on hole compact double quantum dots fabricated using conventional CMOS technology. We provide evidence of Pauli spin blockade in the few hole regime which is relevant to spin qubit implementations. A current dip is observed around zero magnetic field, in agreement with the expected behavior for the case of strong spin-orbit. We deduce an intradot spin relaxation rate $\approx$120\,kHz for the first holes, an important step towards a robust hole spin-orbit qubit. △ Less

Submitted 22 September, 2016; v1 submitted 1 July, 2016; originally announced July 2016.

Pauli spin blockade in CMOS double quantum dot devices

Authors: D. Kotekar-Patil, A. Corna, R. Maurand, A. Crippa, A. Orlov, S. Barraud, X. Jehl, S. De Franceschi, M. Sanquer

Abstract: Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here we report on transport experiments in double gate nanowire transistors issued from a CMOS process on 300 mm silicon-on-insulator wafers. At low temperature the devices behave as… ▽ More Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here we report on transport experiments in double gate nanowire transistors issued from a CMOS process on 300 mm silicon-on-insulator wafers. At low temperature the devices behave as two few-electron quantum dots in series. We observe signatures of Pauli spin blockade with a singlet-triplet splitting ranging from 0.3 to 1.3 meV. Magneto-transport measurements show that transitions which conserve spin are shown to be magnetic-field independent up to B = 6 T. △ Less

Submitted 24 April, 2017; v1 submitted 19 June, 2016; originally announced June 2016.

Comments: 5 pages , 4 figures

Journal ref: Phys. Status Solidi B, 254: n/a, 1600581 (2017)

A CMOS silicon spin qubit

Authors: R. Maurand, X. Jehl, D. Kotekar Patil, A. Corna, H. Bohuslavskyi, R. Laviéville, L. Hutin, S. Barraud, M. Vinet, M. Sanquer, S. De Franceschi

Abstract: Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silic… ▽ More Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot (QD) encoding a hole spin qubit, the second one a QD used for the qubit readout. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. Our result opens a viable path to qubit up-scaling through a readily exploitable CMOS platform. △ Less

Submitted 24 May, 2016; originally announced May 2016.

Comments: 12 pages, 4 figures

Electrical control of g-factors in a few-hole silicon nanowire MOSFET

Authors: B. Voisin, R. Maurand, S. Barraud, M. Vinet, X. Jehl, M. Sanquer, J. Renard, S. De Franceschi

Abstract: Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit manipulation. Here we show that a silicon-nanowire field-effect transistor based on state-of-the-art silicon-on-insulator technology can be operated as a few-hole qua… ▽ More Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit manipulation. Here we show that a silicon-nanowire field-effect transistor based on state-of-the-art silicon-on-insulator technology can be operated as a few-hole quantum dot. A detailed magnetotransport study of the first accessible hole reveals a g-factor with unexpectedly strong anisotropy and gate dependence. We infer that these two characteristics could enable an electrically-driven g-tensor-modulation spin resonance with Rabi frequencies exceeding several hundred MHz. △ Less

Submitted 25 November, 2015; originally announced November 2015.

Comments: 15 pages, 3 figures

PtSi Clustering In Silicon Probed by Transport Spectroscopy

Authors: Massimo Mongillo, Panayotis Spathis, Georgios Katsaros, Riccardo Rurali, Xavier Cartoixa, Pascal Gentile, Silvano de Franceschi

Abstract: Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the device characteristic size is reduced below a few tens of nanometers. Here we report on silicide clustering occurring within the channel of PtSi/Si/PtSi Schottky barrier transistors. This phen… ▽ More Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the device characteristic size is reduced below a few tens of nanometers. Here we report on silicide clustering occurring within the channel of PtSi/Si/PtSi Schottky barrier transistors. This phenomenon is investigated through atomistic simulations and low-temperature resonant tunneling spectroscopy. Our results provide evidence for the segregation of a PtSi cluster with a diameter of a few nanometers from the silicide contact. The cluster acts as metallic quantum dot giving rise to distinct signatures of quantum transport through its discrete energy states. △ Less

Submitted 21 July, 2014; originally announced July 2014.

Journal ref: Physical Review X 3, 041025 (2013)

Control of the ionization state of 3 single donor atoms in silicon

Authors: Benoit Voisin, Manuel Cobian, Xavier Jehl, Yann-Michel Niquet, Christophe Delerue, Silvano De Franceschi, Marc Sanquer

Abstract: By varying the gate and substrate voltage in a short silicon-on-insulator trigate field effect transistor we control the ionization state of three arsenic donors. We obtain a good quantitative agreement between 3D electrostatic simulation and experiment for the control voltage at which the ionization takes place. It allows us observing the three doubly occupied states As- at strong electric field… ▽ More By varying the gate and substrate voltage in a short silicon-on-insulator trigate field effect transistor we control the ionization state of three arsenic donors. We obtain a good quantitative agreement between 3D electrostatic simulation and experiment for the control voltage at which the ionization takes place. It allows us observing the three doubly occupied states As- at strong electric field in the presence of nearby source-drain electrodes. △ Less

Submitted 5 March, 2014; originally announced March 2014.

Comments: 18 pages, 5 figures, submitted to Physical Review B

Journal ref: Phys. Rev. B 89, 161404(R) (2014)

Non-galvanic primary thermometry of a two-dimensional electron gas

Authors: P. Torresani, M. J. Martínez-Pérez, S. Gasparinetti, J. Renard, G. Biasiol, L. Sorba, F. Giazotto, S. De Franceschi

Abstract: We report the experimental realization of a non-galvanic, primary thermometer capable of measuring the electron temperature of a two-dimensional electron gas with negligible thermal load. Such a thermometer consists of a quantum dot whose temperature-dependent, single-electron transitions are detected by means of a quantum-point-contact electrometer. Its operating principle is demonstrated for a w… ▽ More We report the experimental realization of a non-galvanic, primary thermometer capable of measuring the electron temperature of a two-dimensional electron gas with negligible thermal load. Such a thermometer consists of a quantum dot whose temperature-dependent, single-electron transitions are detected by means of a quantum-point-contact electrometer. Its operating principle is demonstrated for a wide range of electron temperatures from 40 to 800 mK. This noninvasive thermometry can find application in experiments addressing the thermal properties of micrometer-scale mesoscopic electron systems, where heating or cooling electrons requires relatively low thermal budgets. △ Less

Submitted 10 December, 2013; v1 submitted 9 September, 2013; originally announced September 2013.

Journal ref: Phys. Rev. B 88, 245304 (2013)

SiGe quantum dots for fast hole spin Rabi oscillations

Authors: N. Ares, G. Katsaros, V. N. Golovach, J. J. Zhang, A. Prager, L. I. Glazman, O. G. Schmidt, S. De Franceschi

Abstract: We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal significant changes for a small modulation of the top gate voltage. From the observed modulations we estimate that, for realistic experimental conditions… ▽ More We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal significant changes for a small modulation of the top gate voltage. From the observed modulations we estimate that, for realistic experimental conditions, hole spins can be electrically manipulated with Rabi frequencies in the order of 100MHz. This work emphasises the potential of hole-based nano-devices for efficient spin manipulation by means of the g-tensor modulation technique. △ Less

Submitted 26 July, 2013; originally announced July 2013.

Journal ref: Appl. Phys. Lett. 103, 263113 (2013)

Spin-resolved Andreev levels and parity crossings in hybrid superconductor-semiconductor nanostructures

Authors: Eduardo J. H. Lee, Xiaocheng Jiang, Manuel Houzet, Ramon Aguado, Charles M. Lieber, Silvano De Franceschi

Abstract: The hybrid combination of superconductors and low-dimensional semiconductors offers a versatile ground for novel device concepts, such as sources of spin-entangled electrons, nanoscale superconducting magnetometers, or recently proposed qubits based on topologically protected Majorana fermions. The underlying physics behind such hybrid devices ultimately rely on the magnetic properties of sub-gap… ▽ More The hybrid combination of superconductors and low-dimensional semiconductors offers a versatile ground for novel device concepts, such as sources of spin-entangled electrons, nanoscale superconducting magnetometers, or recently proposed qubits based on topologically protected Majorana fermions. The underlying physics behind such hybrid devices ultimately rely on the magnetic properties of sub-gap excitations, known as Andreev levels. Here we report the Zeeman effect on the Andreev levels of a semiconductor nanowire quantum dot (QD) strongly coupled to a conventional superconductor. The combination of the large QD g-factor with the large superconductor critical magnetic field allows spin degeneracy to be lifted without suppressing superconductivity. We show that a Zeeman-split Andreev level crossing the Fermi energy signals a quantum phase transition in the ground state of the superconductivity-induced QD, denoting a change in the fermionic parity of the system. This transition manifests itself as a zero-bias conductance anomaly appearing at a finite magnetic field, with properties that resemble those expected for Majorana fermions in a topological superconductor. Although the herein reported zero-bias anomalies do not hold any relation with topological superconductivity, the observed parity transitions can be regarded as precursors of Majorana modes in the long-wire limit. △ Less

Submitted 23 January, 2014; v1 submitted 11 February, 2013; originally announced February 2013.

Comments: 16 pages, 9 figures

Journal ref: Nature Nanotech., 9 (2014) 79-84

Multifunctional Devices and Logic Gates With Undoped Silicon Nanowires

Authors: Massimo Mongillo, Panayotis Spathis, Georgios Katsaros, Pascal Gentile, Silvano De Franceschi

Abstract: We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature dependent measurements. The roles of the source/drain contacts and of the silicon channel could be independently evaluated and tuned. Wrap gates surroun… ▽ More We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature dependent measurements. The roles of the source/drain contacts and of the silicon channel could be independently evaluated and tuned. Wrap gates surrounding the silicide-silicon contact interfaces were proved to be effective in inducing a full suppression of the contact Schottky barriers, thereby enabling carrier injection down to liquid-helium temperature. By independently tuning the effective Schottky barrier heights, a variety of reconfigurable device functionalities could be obtained. In particular, the same nanowire device could be configured to work as a Schottky barrier transistor, a Schottky diode or a p-n diode with tunable polarities. This versatility was eventually exploited to realize a NAND logic gate with gain well above one. △ Less

Submitted 7 August, 2012; originally announced August 2012.

Comments: 6 pages, 5 figures

Journal ref: Nano Letters, 2012, 12 (6), pp 3074--3079