Showing 1–7 of 7 results for author: Venitucci, B

Gate reflectometry in dense quantum dot arrays

Authors: Fabio Ansaloni, Heorhii Bohuslavskyi, Federico Fedele, Torbjørn Rasmussen, Bertram Brovang, Fabrizio Berritta, Amber Heskes, Jing Li, Louis Hutin, Benjamin Venitucci, Benoit Bertrand, Maud Vinet, Yann-Michel Niquet, Anasua Chatterjee, Ferdinand Kuemmeth

Abstract: Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We perform gate-voltage pulsing and gate-based reflectometry measurements on a dense 2$\times$2 array of silicon quantum dots fabricated in a 300-mm-wafer foundry. Uti… ▽ More Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We perform gate-voltage pulsing and gate-based reflectometry measurements on a dense 2$\times$2 array of silicon quantum dots fabricated in a 300-mm-wafer foundry. Utilizing the strong capacitive couplings within the array, it is sufficient to monitor only one gate electrode via high-frequency reflectometry to establish single-electron occupation in each of the four dots and to detect single-electron movements with high bandwidth. A global top-gate electrode adjusts the overall tunneling times, while linear combinations of side-gate voltages yield detailed charge stability diagrams. To test for spin physics and Pauli spin blockade at finite magnetic fields, we implement symmetric gate-voltage pulses that directly reveal bidirectional interdot charge relaxation as a function of the detuning between two dots. Charge sensing within the array can be established without the involvement of adjacent electron reservoirs, important for scaling such split-gate devices towards longer 2$\times$N arrays. Our techniques may find use in the scaling of few-dot spin-qubit devices to large-scale quantum processors. △ Less

Submitted 5 June, 2023; v1 submitted 8 December, 2020; originally announced December 2020.

Comments: 13 pages including appendices and 9 figures

Report number: NBI QDEV 2023

Journal ref: New J. Phys. 25, 033023 (2023)

Longitudinal and transverse electric field manipulation of hole spin-orbit qubits in one-dimensional channels

Authors: Vincent P. Michal, Benjamin Venitucci, Yann-Michel Niquet

Abstract: Holes confined in semiconductor nanostructures realize qubits where the quantum mechanical spin is strongly mixed with the quantum orbital angular momentum. The remarkable spin-orbit coupling allows for fast all electrical manipulation of such qubits. We study an idealization of a CMOS device where the hole is strongly confined in one direction (thin film geometry), while it is allowed to move mor… ▽ More Holes confined in semiconductor nanostructures realize qubits where the quantum mechanical spin is strongly mixed with the quantum orbital angular momentum. The remarkable spin-orbit coupling allows for fast all electrical manipulation of such qubits. We study an idealization of a CMOS device where the hole is strongly confined in one direction (thin film geometry), while it is allowed to move more extensively along a one-dimensional channel. Static electric bias and $ac$ electrical driving are applied by metallic gates arranged along the channel. In quantum devices based on materials with a bulk inversion symmetry, such as silicon or germanium, there exists different possible spin-orbit coupling based mechanisms for qubit manipulation. One of them, the $g$-tensor magnetic resonance ($g$-TMR), relies on the dependence of the effective $g$-factors on the electrical confinement. In this configuration the hole is driven by an $ac$ field parallel to the static electric field and perpendicular to the channel (transverse driving). Another mechanism, which we refer to here as iso-Zeeman electric dipole spin resonance (IZ-EDSR), is due to the Rashba spin-orbit coupling that leads to an effective time-dependent magnetic field experienced by the pseudo-spin oscillating along the quantum channel (longitudinal driving). We compare these two modes of operation and we describe the conditions where the magnitudes of the Rabi frequencies are the largest. Different regimes can be attained by electrical tuning where the coupling to the $ac$ electric field is made either weak or strong... △ Less

Submitted 21 January, 2021; v1 submitted 15 October, 2020; originally announced October 2020.

Comments: Minor modifications made before publication

Journal ref: Phys. Rev. B 103, 045305 (2021)

Hole-phonon interactions in quantum dots: Effects of phonon confinement and encapsulation materials on spin-orbit qubits

Authors: Jing Li, Benjamin Venitucci, Yann-Michel Niquet

Abstract: Spin-phonon interactions are one of the mechanisms limiting the lifetime of spin qubits made in semiconductor quantum dots. At variance with other mechanisms such as charge noise, phonons are intrinsic to the device and can hardly be mitigated. They set, therefore fundamental limits to the relaxation time of the qubits. Here we introduce a general framework for the calculation of the spin (and cha… ▽ More Spin-phonon interactions are one of the mechanisms limiting the lifetime of spin qubits made in semiconductor quantum dots. At variance with other mechanisms such as charge noise, phonons are intrinsic to the device and can hardly be mitigated. They set, therefore fundamental limits to the relaxation time of the qubits. Here we introduce a general framework for the calculation of the spin (and charge) transition rates induced by bulk (3D) and strongly confined 1D or 2D phonons. We discuss the particular case of hole spin-orbit qubits described by the 6 bands kp model. We next apply this theory to a hole qubit in a silicon-on-insulator device. We show that spin relaxation in this device is dominated by a band mixing term that couples the holes to transverse acoustic phonons through the valence band deformation potential d, and optimize the bias point and magnetic field orientation to maximize the number of Rabi oscillations Q that can be achieved within on relaxation time T1. Despite the strong spin-orbit coupling in the valence band, the phonon-limited Q can reach a few tens of thousands. We next explore the effects of phonon confinement in 1D and 2D structures, and the impact of the encapsulation materials on the relaxation rates. We show that the spin lifetimes can depend on the structure of the device over micrometer-long length scales and that they improve when the materials around the qubit get harder. Phonon engineering in semiconductor qubits may therefore become relevant once the extrinsic sources of relaxation have been reduced. △ Less

Submitted 17 August, 2020; v1 submitted 17 March, 2020; originally announced March 2020.

Comments: 17 pages, 10 figures + 10 pages supplementary information

Journal ref: Phys. Rev. B 102, 075415 (2020)

Towards scalable silicon quantum computing

Authors: M. Vinet, L. Hutin, B. Bertrand, S. Barraud, J. -M. Hartmann, Y. -J. Kim, V. Mazzocchi, A. Amisse, H. Bohuslavskyi, L. Bourdet, A. Crippa, X. Jehl, R. Maurand, Y. -M. Niquet, M. Sanquer, B. Venitucci, B. Jadot, E. Chanrion, P. -A. Mortemousque, C. Spence, M. Urdampilleta, S. De Franceschi, T. Meunier

Abstract: We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures. We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Journal ref: 2018 IEEE International Electron Devices Meeting (IEDM)

Simple model for electrical hole spin manipulation in semiconductor quantum dots: Impact of dot material and orientation

Authors: Benjamin Venitucci, Yann-Michel Niquet

Abstract: We analyze a prototypical particle-in-a-box model for a hole spin qubit. This quantum dot is subjected to static magnetic and electric fields, and to a radio-frequency electric field that drives Rabi oscillations owing to spin-orbit coupling. We derive the equations for the Rabi frequency in a regime where the Rabi oscillations mostly result from the coupling between the qubit states and a single… ▽ More We analyze a prototypical particle-in-a-box model for a hole spin qubit. This quantum dot is subjected to static magnetic and electric fields, and to a radio-frequency electric field that drives Rabi oscillations owing to spin-orbit coupling. We derive the equations for the Rabi frequency in a regime where the Rabi oscillations mostly result from the coupling between the qubit states and a single nearby excited state. This regime has been shown to prevail in, e.g., hole spin qubits in thin silicon-on-insulator nanowires. The equations for the Rabi frequency highlight the parameters that control the Rabi oscillations. We show, in particular, that [110]-oriented dots on (001) substrates perform much better than [001]-oriented dots because they take best advantage of the anisotropy of the valence band of the host material. We also conclude that silicon provides the best opportunities for fast Rabi oscillations in this regime despite small spin-orbit coupling. △ Less

Submitted 1 April, 2019; v1 submitted 28 January, 2019; originally announced January 2019.

Comments: 14 pages, 8 figures

Journal ref: Phys. Rev. B 99, 115317 (2019)

Electrical manipulation of semiconductor spin qubits within the g-matrix formalism

Authors: Benjamin Venitucci, Léo Bourdet, Daniel Pouzada, Yann-Michel Niquet

Abstract: We discuss the modeling of the electrical manipulation of spin qubits in the linear-response regime where the Rabi frequency is proportional to the magnetic field and to the radio-frequency electric field excitation. We show that the Rabi frequency can be obtained from a generalized g-tensor magnetic resonance formula featuring a g-matrix and its derivative g' with respect to the electric field (o… ▽ More We discuss the modeling of the electrical manipulation of spin qubits in the linear-response regime where the Rabi frequency is proportional to the magnetic field and to the radio-frequency electric field excitation. We show that the Rabi frequency can be obtained from a generalized g-tensor magnetic resonance formula featuring a g-matrix and its derivative g' with respect to the electric field (or gate voltage) as inputs. These matrices can be easily calculated from the wave functions of the qubit at zero magnetic field. The g-matrix formalism therefore provides the complete dependence of the Larmor and Rabi frequencies on the orientation of the magnetic field at very low computational cost. It also provides a compact model for the control of the qubit, and a simple framework for the analysis of the effects of symmetries on the anisotropy of the Larmor and Rabi frequencies. The g-matrix formalism applies to a wide variety of electron and hole qubits, and we focus on a hole qubit in a silicon-on-insulator nanowire as an illustration. We show that the Rabi frequency of this qubit shows a complex dependence on the orientation of the magnetic field, and on the gate voltages that control the symmetry of the hole wave functions. We point out that the qubit may be advantageously switched between two bias points, one where it can be manipulated efficiently, and one where it is largely decoupled from the gate field but presumably longer lived. We also discuss the role of residual strains in such devices in relation to recent experiments. △ Less

Submitted 24 October, 2018; v1 submitted 24 July, 2018; originally announced July 2018.

Comments: To be published in Physical Review B

Journal ref: Phys. Rev. B 98, 155319 (2018)

Nonadiabatic Josephson current pumping by microwave irradiation

Authors: B. Venitucci, D. Feinberg, R. Mélin, B. Douçot

Abstract: Irradiating a Josephson junction with microwaves can operate not only on the amplitude but also on the phase of the Josephson current. This requires breaking time inversion symmetry, which is achieved by introducing a phase lapse between the microwave components acting on the two† sides of the junction. General symmetry arguments and the solution of a specific single level quantum dot model show t… ▽ More Irradiating a Josephson junction with microwaves can operate not only on the amplitude but also on the phase of the Josephson current. This requires breaking time inversion symmetry, which is achieved by introducing a phase lapse between the microwave components acting on the two† sides of the junction. General symmetry arguments and the solution of a specific single level quantum dot model show that this induces chirality in the Cooper pair dynamics, due to the topology of the Andreev bound state wavefunction. Another essential condition is to break electron-hole symmetry within the junction. A shift of the current-phase relation is obtained, which is controllable in sign and amplitude with the microwave phase and an electrostatic gate, thus producing a "chiral" Josephson transistor. The dot model is solved in the infinite gap limit by Floquet theory and in the general case with Keldysh nonequilibrium Green's functions. The chiral current is nonadiabatic: it is extremal and changes sign close to resonant chiral transitions between the Andreev bound states. △ Less

Submitted 5 April, 2018; v1 submitted 10 August, 2017; originally announced August 2017.

Comments: 13 pages, 7 figures, extended version

Journal ref: Phys. Rev. B 97, 195423 (2018)