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Broadband parametric amplification for multiplexed SiMOS quantum dot signals
Authors:
Victor Elhomsy,
Luca Planat,
David J. Niegemann,
Bruna Cardoso-Paz,
Ali Badreldin,
Bernhard Klemt,
Vivien Thiney,
Renan Lethiecq,
Eric Eyraud,
Matthieu C. Dartiailh,
Benoit Bertrand,
Heimanu Niebojewski,
Christopher Bäuerle,
Maud Vinet,
Tristan Meunier,
Nicolas Roch,
Matias Urdampilleta
Abstract:
Spins in semiconductor quantum dots hold great promise as building blocks of quantum processors. Trapping them in SiMOS transistor-like devices eases future industrial scale fabrication. Among the potentially scalable readout solutions, gate-based dispersive radiofrequency reflectometry only requires the already existing transistor gates to readout a quantum dot state, relieving the need for addit…
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Spins in semiconductor quantum dots hold great promise as building blocks of quantum processors. Trapping them in SiMOS transistor-like devices eases future industrial scale fabrication. Among the potentially scalable readout solutions, gate-based dispersive radiofrequency reflectometry only requires the already existing transistor gates to readout a quantum dot state, relieving the need for additional elements. In this effort towards scalability, traveling-wave superconducting parametric amplifiers significantly enhance the readout signal-to-noise ratio (SNR) by reducing the noise below typical cryogenic low-noise amplifiers, while offering a broad amplification band, essential to multiplex the readout of multiple resonators. In this work, we demonstrate a 3GHz gate-based reflectometry readout of electron charge states trapped in quantum dots formed in SiMOS multi-gate devices, with SNR enhanced thanks to a Josephson traveling-wave parametric amplifier (JTWPA). The broad, tunable 2GHz amplification bandwidth combined with more than 10dB ON/OFF SNR improvement of the JTWPA enables frequency and time division multiplexed readout of interdot transitions, and noise performance near the quantum limit. In addition, owing to a design without superconducting loops and with a metallic ground plane, the JTWPA is flux insensitive and shows stable performances up to a magnetic field of 1.2T at the quantum dot device, compatible with standard SiMOS spin qubit experiments.
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Submitted 2 August, 2023; v1 submitted 27 July, 2023;
originally announced July 2023.
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Electrical manipulation of a single electron spin in CMOS with micromagnet and spin-valley coupling
Authors:
Bernhard Klemt,
Victor El-Homsy,
Martin Nurizzo,
Pierre Hamonic,
Biel Martinez,
Bruna Cardoso Paz,
Cameron spence,
Matthieu Dartiailh,
Baptiste Jadot,
Emmanuel Chanrion,
Vivien Thiney,
Renan Lethiecq,
Benoit Bertrand,
Heimanu Niebojewski,
Christopher Bäuerle,
Maud Vinet,
Yann-Michel Niquet,
Tristan Meunier,
Matias Urdampilleta
Abstract:
For semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is the ideal candidate for reliable and scalable fabrication. Making the direct leap from academic fabrication to qubits fabricated fully by industrial CMOS standards is difficult without intermediate solutions. With a flexible back-end-of-line (BEOL) new functionalities such as micromagnets or superconducting…
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For semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is the ideal candidate for reliable and scalable fabrication. Making the direct leap from academic fabrication to qubits fabricated fully by industrial CMOS standards is difficult without intermediate solutions. With a flexible back-end-of-line (BEOL) new functionalities such as micromagnets or superconducting circuits can be added in a post-CMOS process to study the physics of these devices or achieve proof of concepts. Once the process is established it can be incorporated in the foundry-compatible process flow. Here, we study a single electron spin qubit in a CMOS device with a micromagnet integrated in the flexible BEOL. We exploit the synthetic spin orbit coupling (SOC) to control the qubit via electric field and we investigate the spin-valley physics in the presence of SOC where we show an enhancement of the Rabi frequency at the spin-valley hotspot. Finally, we probe the high frequency noise in the system using dynamical decoupling pulse sequences and demonstrate that charge noise dominates the qubit decoherence in this range.
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Submitted 8 March, 2023;
originally announced March 2023.
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In-flight detection of few electrons using a singlet-triplet spin qubit
Authors:
Vivien Thiney,
Pierre-André Mortemousque,
Konstantinos Rogdakis,
Romain Thalineau,
Arne Ludwig,
Andreas D. Wieck,
Matias Urdampilleta,
Christopher Bäuerle,
Tristan Meunier
Abstract:
We investigate experimentally the capacitive coupling between a two-electron singlet-triplet spin qubit and flying electrons propagating in quantum Hall edge channels. After calibration of the spin qubit detector, we assess its charge sensibility and demonstrate experimentally the detection of less than five flying electrons with average measurement. This experiment demonstrates that the spin qubi…
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We investigate experimentally the capacitive coupling between a two-electron singlet-triplet spin qubit and flying electrons propagating in quantum Hall edge channels. After calibration of the spin qubit detector, we assess its charge sensibility and demonstrate experimentally the detection of less than five flying electrons with average measurement. This experiment demonstrates that the spin qubit is an ultrasensitive and fast charge detector with the perspective of a future single shot-detection of a single flying electron. This work opens the route toward quantum electron optics experiments at the single electron level in semiconductor circuits.
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Submitted 22 November, 2022; v1 submitted 17 October, 2022;
originally announced October 2022.
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Probing charge noise in few electron CMOS quantum dots
Authors:
Cameron Spence,
Bruna Cardoso-Paz,
Vincent Michal,
Emmanuel Chanrion,
David J. Niegemann,
Baptiste Jadot,
Pierre-André Mortemousque,
Bernhard Klemt,
Vivien Thiney,
Benoit Bertrand,
Louis Hutin,
Christopher Bäuerle,
Franck Balestro,
Maud Vinet,
Yann-Michel Niquet,
Tristan Meunier,
Matias Urdampilleta
Abstract:
Charge noise is one of the main sources of environmental decoherence for spin qubits in silicon, presenting a major obstacle in the path towards highly scalable and reproducible qubit fabrication.
Here we demonstrate in-depth characterization of the charge noise environment experienced by a quantum dot in a CMOS-fabricated silicon nanowire.
We probe the charge noise for different quantum dot c…
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Charge noise is one of the main sources of environmental decoherence for spin qubits in silicon, presenting a major obstacle in the path towards highly scalable and reproducible qubit fabrication.
Here we demonstrate in-depth characterization of the charge noise environment experienced by a quantum dot in a CMOS-fabricated silicon nanowire.
We probe the charge noise for different quantum dot configurations, finding that it is possible to tune the charge noise over two orders of magnitude, ranging from 1 ueV^2 to 100 ueV^2. In particular, we show that the top interface and the reservoirs are the main sources of charge noise and their effect can be mitigated by controlling the quantum dot extension.
Additionally, we demonstrate a novel method for the measurement of the charge noise experienced by a quantum dot in the few electron regime.
We measure a comparatively higher charge noise value of 40 ueV^2 at the first electron, and demonstrate that the charge noise is highly dependent on the electron occupancy of the quantum dot.
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Submitted 5 September, 2022;
originally announced September 2022.
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Complete readout of two-electron spin states in a double quantum dot
Authors:
Martin Nurizzo,
Baptiste Jadot,
Pierre-André Mortemousque,
Vivien Thiney,
Emmanuel Chanrion,
David Niegemann,
Matthieu Dartiailh,
Arne Ludwig,
Andreas D. Wieck,
Christopher Bäuerle,
Matias Urdampilleta,
Tristan Meunier
Abstract:
We propose and demonstrate complete spin state readout of a two-electron system in a double quantum dot probed by an electrometer. The protocol is based on repetitive single shot measurements using Pauli spin blockade and our ability to tune on fast timescales the detuning and the interdot tunnel coupling between the GHz and sub-Hz regime. A sequence of three distinct manipulations and measurement…
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We propose and demonstrate complete spin state readout of a two-electron system in a double quantum dot probed by an electrometer. The protocol is based on repetitive single shot measurements using Pauli spin blockade and our ability to tune on fast timescales the detuning and the interdot tunnel coupling between the GHz and sub-Hz regime. A sequence of three distinct manipulations and measurements allows establishing if the spins are in S, Tzero, Tplus or Tminus state. This work points at a procedure to reduce the overhead for spin readout, an important challenge for scaling up spin qubit platforms.
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Submitted 1 September, 2022;
originally announced September 2022.
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Parity and singlet-triplet high fidelity readout in a silicon double quantum dot at 0.5 K
Authors:
David J. Niegemann,
Victor El-Homsy,
Baptiste Jadot,
Martin Nurizzo,
Bruna Cardoso-Paz,
Emmanuel Chanrion,
Matthieu Dartiailh,
Bernhard Klemt,
Vivien Thiney,
Christopher Bäuerle,
Pierre-André Mortemousque,
Benoit Bertrand,
Heimanu Niebojewski,
Maud Vinet,
Franck Balestro,
Tristan Meunier,
Matias Urdampilleta
Abstract:
We demonstrate singlet-triplet readout and parity readout allowing to distinguish T0 and the polarized triplet states. We achieve high fidelity spin readout with an average fidelity above $99.9\%$ for a readout time of $20~μ$s and $99\%$ for $4~μ$s at a temperature of $0.5~K$. We initialize a singlet state in a single dot with a fidelity higher than $99\%$ and separate the two electrons while keep…
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We demonstrate singlet-triplet readout and parity readout allowing to distinguish T0 and the polarized triplet states. We achieve high fidelity spin readout with an average fidelity above $99.9\%$ for a readout time of $20~μ$s and $99\%$ for $4~μ$s at a temperature of $0.5~K$. We initialize a singlet state in a single dot with a fidelity higher than $99\%$ and separate the two electrons while keeping the same spin state with $a \approx 95.6\%$ fidelity.
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Submitted 21 July, 2022;
originally announced July 2022.
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Controlled quantum dot array segmentation via a highly tunable interdot tunnel coupling
Authors:
Martin Nurizzo,
Baptiste Jadot,
Pierre-André Mortemousque,
Vivien Thiney,
Emmanuel Chanrion,
Matthieu Dartiailh,
Arne Ludwig,
Andreas D. Wieck,
Christopher Bäuerle,
Matias Urdampilleta,
Tristan Meunier
Abstract:
Recent demonstrations using electron spins stored in quantum dots array as qubits are promising for developing a scalable quantum computing platform. An ongoing effort is therefore aiming at the precise control of the quantum dots parameters in larger and larger arrays which represents a complex challenge. Partitioning of the system with the help of the inter-dot tunnel barriers can lead to a simp…
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Recent demonstrations using electron spins stored in quantum dots array as qubits are promising for developing a scalable quantum computing platform. An ongoing effort is therefore aiming at the precise control of the quantum dots parameters in larger and larger arrays which represents a complex challenge. Partitioning of the system with the help of the inter-dot tunnel barriers can lead to a simplification for tuning and offers a protection against unwanted charge displacement. In a triple quantum dot system, we demonstrate a nanosecond control of the inter-dot tunnel rate permitting to reach the two extreme regimes, large GHz tunnel coupling and sub-Hz isolation between adjacent dots. We use this novel development to isolate a sub part of the array while performing charge displacement and readout in the rest of the system. The degree of control over the tunnel coupling achieved in a unit cell should motivate future protocol development for tuning, manipulation and readout including this capability.
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Submitted 19 July, 2022;
originally announced July 2022.
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Superconducting routing platform for large-scale integration of quantum technologies
Authors:
Candice Thomas,
Jean-Philippe Michel,
Edouard Deschaseaux,
Jean Charbonnier,
Richard Souil,
Elisa Vermande,
Alain Campo,
Thierry Farjot,
Guillaume Rodriguez,
Giovanni Romano,
Frédéric Gustavo,
Baptiste Jadot,
Vivien Thiney,
Yvain Thonnart,
Gérard Billiot,
Tristan Meunier,
Maud Vinet
Abstract:
To reach large-scale quantum computing, three-dimensional integration of scalable qubit arrays and their control electronics in multi-chip assemblies is promising. Within these assemblies, the use of superconducting interconnections, as routing layers, offers interesting perspective in terms of (1) thermal management to protect the qubits from control electronics self-heating, (2) passive device p…
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To reach large-scale quantum computing, three-dimensional integration of scalable qubit arrays and their control electronics in multi-chip assemblies is promising. Within these assemblies, the use of superconducting interconnections, as routing layers, offers interesting perspective in terms of (1) thermal management to protect the qubits from control electronics self-heating, (2) passive device performance with significant increase of quality factors and (3) density rise of low and high frequency signals thanks to minimal dispersion. We report on the fabrication, using 200 mm silicon wafer technologies, of a multi-layer routing platform designed for the hybridization of spin qubit and control electronics chips. A routing level couples the qubits and the control circuits through one layer of Al0.995Cu0.005 and superconducting layers of TiN, Nb or NbN, connected between them by W-based vias. Wafer-level parametric tests at 300 K validate the yield of these technologies and low temperature electrical measurements in cryostat are used to extract the superconducting properties of the routing layers. Preliminary low temperature radio-frequency characterizations of superconducting passive elements, embedded in these routing levels, are presented.
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Submitted 21 November, 2022; v1 submitted 20 June, 2022;
originally announced June 2022.
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Spin-valley coupling anisotropy and noise in CMOS quantum dots
Authors:
Cameron Spence,
Bruna Cardoso Paz,
Bernhard Klemt,
Emmanuel Chanrion,
David J. Niegemann,
Baptiste Jadot,
Vivien Thiney,
Benoit Bertrand,
Heimanu Niebojewski,
Pierre-André Mortemousque,
Xavier Jehl,
Romain Maurand,
Silvano De Franceschi,
Maud Vinet,
Franck Balestro,
Christopher Bäuerle,
Yann-Michel Niquet,
Tristan Meunier,
Matias Urdampilleta
Abstract:
One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst maintaining high readout and gate fidelities. We demonstrate detection of a single electron spin using energy-selective readout in a CMOS-fabricated nanowire devi…
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One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst maintaining high readout and gate fidelities. We demonstrate detection of a single electron spin using energy-selective readout in a CMOS-fabricated nanowire device with an integrated charge detector. We measure a valley splitting of 0.3 meV and 0.16 meV in two similar devices. The anisotropy of the spin-valley mixing is measured and shown to follow the dependence expected from the symmetry of the local confinement, indicating low disorder in the region of the quantum dot. Finally the charge noise in the spin-valley coupling regime is investigated and found to induce fluctuations in the qubit energy in the range of $0.6GHz/\sqrt{Hz}$.
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Submitted 28 September, 2021;
originally announced September 2021.
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Enhanced spin coherence while displacing electron in a 2D array of quantum dots
Authors:
Pierre-André Mortemousque,
Baptiste Jadot,
Emmanuel Chanrion,
Vivien Thiney,
Christopher Bäuerle,
Arne Ludwig,
Andreas D. Wieck,
Matias Urdampilleta,
Tristan Meunier
Abstract:
The ability to shuttle coherently individual electron spins in arrays of quantum dots is a key procedure for the development of scalable quantum information platforms. It allows the use of sparsely populated electron spin arrays, envisioned to efficiently tackle the one- and two-qubit gate challenges. When the electrons are displaced in an array, they are submitted to site-dependent environment in…
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The ability to shuttle coherently individual electron spins in arrays of quantum dots is a key procedure for the development of scalable quantum information platforms. It allows the use of sparsely populated electron spin arrays, envisioned to efficiently tackle the one- and two-qubit gate challenges. When the electrons are displaced in an array, they are submitted to site-dependent environment interactions such as hyperfine coupling with substrate nuclear spins. Here, we demonstrate that the electron multi-directional displacement in a $3\times 3$ array of tunnel coupled quantum dots enhances the spin coherence time via the motional narrowing phenomenon. More specifically, up to 10 configurations are explored by the electrons to study the impact of the displacement on spin dynamics. An increase of the coherence time by a factor up to 10 is observed in case of fast and repetitive displacement. The physical mechanism responsible for the loss of coherence induced by displacement is quantitatively captured by a simple model and its implications on spin coherence properties during the electron displacement are discussed in the context of large-scale quantum circuits.
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Submitted 15 January, 2021;
originally announced January 2021.
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Distant spin entanglement via fast and coherent electron shuttling
Authors:
Baptiste Jadot,
Pierre-André Mortemousque,
Emmanuel Chanrion,
Vivien Thiney,
Arne Ludwig,
Andreas D. Wieck,
Matias Urdampilleta,
Christopher Bäuerle,
Tristan Meunier
Abstract:
In the quest for large-scale quantum computing, networked quantum computers offer a natural path towards scalability. Now that nearest neighbor entanglement has been demonstrated for electron spin qubits in semiconductors, on-chip long distance entanglement brings versatility to connect quantum core units. Here we realize the controlled and coherent transfer of a pair of entangled electron spins,…
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In the quest for large-scale quantum computing, networked quantum computers offer a natural path towards scalability. Now that nearest neighbor entanglement has been demonstrated for electron spin qubits in semiconductors, on-chip long distance entanglement brings versatility to connect quantum core units. Here we realize the controlled and coherent transfer of a pair of entangled electron spins, and demonstrate their remote entanglement when separated by a distance of 6 microns. Driven by coherent spin rotations induced by the electron displacement, high-contrast spin quantum interferences are observed and are a signature of the preservation of the entanglement all along the displacement procedure. This work opens the route towards fast on-chip deterministic interconnection of remote quantum bits in semiconductor quantum circuits.
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Submitted 6 April, 2020;
originally announced April 2020.
