Showing 1–18 of 18 results for author: Brun, B

Gate- and flux-tunable sin(2$\varphi$) Josephson element with proximitized Ge-based junctions

Authors: Axel Leblanc, Chotivut Tangchingchai, Zahra Sadre Momtaz, Elyjah Kiyooka, Jean-Michel Hartmann, Frederic Gustavo, Jean-Luc Thomassin, Boris Brun, Vivien Schmitt, Simon Zihlmann, Romain Maurand, Etienne Dumur, Silvano De Franceschi, Francois Lefloch

Abstract: Hybrid superconductor-semiconductor Josephson field-effect transistors (JoFETs) function as Josephson junctions with a gate-tunable critical current. Additionally, they can feature a non-sinusoidal current-phase relation (CPR) containing multiple harmonics of the superconducting phase difference, a so-far underutilized property. In this work, we exploit this multi-harmonicity to create a Josephson… ▽ More Hybrid superconductor-semiconductor Josephson field-effect transistors (JoFETs) function as Josephson junctions with a gate-tunable critical current. Additionally, they can feature a non-sinusoidal current-phase relation (CPR) containing multiple harmonics of the superconducting phase difference, a so-far underutilized property. In this work, we exploit this multi-harmonicity to create a Josephson circuit element with an almost perfectly $π$-periodic CPR, indicative of a largely dominant charge-4e supercurrent transport. Such a Josephson element was recently proposed as the basic building block of a protected superconducting qubit. Here, it is realized using a superconducting quantum interference device (SQUID) with low-inductance aluminum arms and two nominally identical JoFETs. The latter are fabricated from a SiGe/Ge/SiGe quantum-well heterostructure embedding a high-mobility two-dimensional hole gas. By carefully adjusting the JoFET gate voltages and finely tuning the magnetic flux through the SQUID close to half a flux quantum, we achieve a regime where the $\sin(2\varphi)$ component accounts for more than \SI{95}{\percent} of the total supercurrent. This result demonstrates a new promising route for the realization of superconducting qubits with enhanced coherence properties. △ Less

Submitted 17 June, 2024; v1 submitted 23 May, 2024; originally announced May 2024.

Reconstructing the potential configuration in a high-mobility semiconductor heterostructure with scanning gate microscopy

Authors: Gaëtan J. Percebois, Antonio Lacerda-Santos, Boris Brun, Benoit Hackens, Xavier Waintal, Dietmar Weinmann

Abstract: The weak disorder potential seen by the electrons of a two-dimensional electron gas in high-mobility semiconductor heterostructures leads to fluctuations in the physical properties and can be an issue for nanodevices. In this paper, we show that a scanning gate microscopy (SGM) image contains information about the disorder potential, and that a machine learning approach based on SGM data can be us… ▽ More The weak disorder potential seen by the electrons of a two-dimensional electron gas in high-mobility semiconductor heterostructures leads to fluctuations in the physical properties and can be an issue for nanodevices. In this paper, we show that a scanning gate microscopy (SGM) image contains information about the disorder potential, and that a machine learning approach based on SGM data can be used to determine the disorder. We reconstruct the electric potential of a sample from its experimental SGM data and validate the result through an estimate of its accuracy. △ Less

Submitted 9 November, 2023; v1 submitted 25 August, 2023; originally announced August 2023.

Comments: 23 pages, 12 figures, Submission to SciPost

Journal ref: SciPost Phys. 15, 242 (2023)

Real-time milli-Kelvin thermometry in a semiconductor qubit architecture

Authors: Victor Champain, Vivien Schmitt, Benoit Bertrand, Heimanu Niebojewski, Romain Maurand, Xavier Jehl, Clemens Winkelmann, Silvano De Franceschi, Boris Brun

Abstract: We report local time-resolved thermometry in a silicon nanowire quantum dot device designed to host a linear array of spin qubits. Using two alternative measurement schemes based on rf reflectometry, we are able to probe either local electron or phonon temperatures with $μ$s-scale time resolution and a noise equivalent temperature of $3$ $\rm mK/\sqrt{\rm Hz}$. Following the application of short m… ▽ More We report local time-resolved thermometry in a silicon nanowire quantum dot device designed to host a linear array of spin qubits. Using two alternative measurement schemes based on rf reflectometry, we are able to probe either local electron or phonon temperatures with $μ$s-scale time resolution and a noise equivalent temperature of $3$ $\rm mK/\sqrt{\rm Hz}$. Following the application of short microwave pulses, causing local periodic heating, time-dependent thermometry can track the dynamics of thermal excitation and relaxation, revealing clearly different characteristic time scales. This work opens important prospects to investigate the out-of-equilibrium thermal properties of semiconductor quantum electronic devices operating at very low temperature. In particular, it may provide a powerful handle to understand heating effects recently observed in semiconductor spin-qubit systems. △ Less

Submitted 20 June, 2024; v1 submitted 24 August, 2023; originally announced August 2023.

Comments: 7 pages 4 figures (supp. mat. 6 pages and 5 figures)

Journal ref: Phys. Rev. Applied 21, 064039 (2024)

Wikigender: A Machine Learning Model to Detect Gender Bias in Wikipedia

Authors: Natalie Bolón Brun, Sofia Kypraiou, Natalia Gullón Altés, Irene Petlacalco Barrios

Abstract: The way Wikipedia's contributors think can influence how they describe individuals resulting in a bias based on gender. We use a machine learning model to prove that there is a difference in how women and men are portrayed on Wikipedia. Additionally, we use the results of the model to obtain which words create bias in the overview of the biographies of the English Wikipedia. Using only adjectives… ▽ More The way Wikipedia's contributors think can influence how they describe individuals resulting in a bias based on gender. We use a machine learning model to prove that there is a difference in how women and men are portrayed on Wikipedia. Additionally, we use the results of the model to obtain which words create bias in the overview of the biographies of the English Wikipedia. Using only adjectives as input to the model, we show that the adjectives used to portray women have a higher subjectivity than the ones used to describe men. Extracting topics from the overview using nouns and adjectives as input to the model, we obtain that women are related to family while men are related to business and sports. △ Less

Submitted 14 November, 2022; originally announced November 2022.

Comments: WikiWorkshop '20 Proc. of World Wide Web Conference

A single hole spin with enhanced coherence in natural silicon

Authors: N. Piot, B. Brun, V. Schmitt, S. Zihlmann, V. P. Michal, A. Apra, J. C. Abadillo-Uriel, X. Jehl, B. Bertrand, H. Niebojewski, L. Hutin, M. Vinet, M. Urdampilleta, T. Meunier, Y. -M. Niquet, R. Maurand, S. De Franceschi

Abstract: Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin-orbit qubit consisting of a single hole electrostatically confined in a… ▽ More Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin-orbit qubit consisting of a single hole electrostatically confined in a natural silicon metal-oxide-semiconductor device. By varying the magnetic field orientation, we reveal the existence of operation sweet spots where the impact of charge noise is minimized while preserving an efficient electric-dipole spin control. We correspondingly observe an extension of the Hahn-echo coherence time up to 88 $μ$s, exceeding by an order of magnitude the best reported values for hole-spin qubits, and approaching the state-of-the-art for electron spin qubits with synthetic spin-orbit coupling in isotopically-purified silicon. This finding largely enhances the prospects of silicon-based hole spin qubits for scalable quantum information processing. △ Less

Submitted 25 September, 2022; v1 submitted 21 January, 2022; originally announced January 2022.

Journal ref: Nature Nanotechnology 17, 1072-1077 (2022)

Graphene whisperitronics: transducing whispering gallery modes into electronic transport

Authors: Boris Brun, Viet-Hung Nguyen, Nicolas Moreau, Sowmya Somanchi, Kenji Watanabe, Takashi Taniguchi, Jean-Christophe Charlier, Christoph Stampfer, Benoit Hackens

Abstract: When confined in circular cavities, graphene relativistic charge carriers occupy whispering gallery modes (WGM) in analogy to classical acoustic and optical fields. The rich geometrical patterns of the WGM decorating the local density of states offer promising perspectives to devise new disruptive quantum devices. However, exploiting these highly sensitive resonances requires the transduction of t… ▽ More When confined in circular cavities, graphene relativistic charge carriers occupy whispering gallery modes (WGM) in analogy to classical acoustic and optical fields. The rich geometrical patterns of the WGM decorating the local density of states offer promising perspectives to devise new disruptive quantum devices. However, exploiting these highly sensitive resonances requires the transduction of the WGMs to the outside world through source and drain electrodes, a yet unreported configuration. Here we create a circular p-n island in a graphene device using a polarized scanning gate microscope tip, and probe the resulting WGMs signatures in in-plane electronic transport through the p-n island. Combining tight-binding simulations and exact solution of the Dirac equation, we assign the measured device conductance features to WGMs, and demonstrate mode selectivity by displacing the p-n island with respect to a constriction. This work therefore constitutes a proof of concept for graphene whisperitronics devices. △ Less

Submitted 14 December, 2021; originally announced December 2021.

Quantum Hall nano-interferometer in graphene

Authors: N. Moreau, B. Brun, S. Somanchi, K. Watanabe, T. Taniguchi, C. Stampfer, B. Hackens

Abstract: Quantum Hall edge states offer avenues for quasiparticle interferometry, provided that the ratio between phase coherence length and quantum Hall interferometer (QHI) size is large enough. Maximizing this ratio by shrinking the QHI area favors Coulomb interactions, impairing clear interferences observation. Here, we use scanning gate spectroscopy to probe interference regime in antidots-based graph… ▽ More Quantum Hall edge states offer avenues for quasiparticle interferometry, provided that the ratio between phase coherence length and quantum Hall interferometer (QHI) size is large enough. Maximizing this ratio by shrinking the QHI area favors Coulomb interactions, impairing clear interferences observation. Here, we use scanning gate spectroscopy to probe interference regime in antidots-based graphene nano-QHIs, free of localized states (LS). A simple Fabry-Perot model, without Coulomb interaction, reproduces the QHI phenomenology, even in the smallest QHI, highlighting the LS detrimental role. △ Less

Submitted 15 October, 2021; originally announced October 2021.

Comments: 5 pages, 4 figures

Contacts and upstream modes explain the electron-hole asymmetry in the graphene quantum Hall regime

Authors: Nicolas Moreau, Boris Brun, Sowmya Somanchi, Kenji Watanabe, Takashi Taniguchi, Christoph Stampfer, Benoît Hackens

Abstract: Observations of electron-hole asymmetry in transport through graphene devices at high magnetic field challenge prevalent models of the graphene quantum Hall effect. Here, we study this asymmetry both in conventional magnetotransport and in scanning gate microscopy maps measured in an encapsulated graphene constriction. We reveal that the presence of upstream modes and local doping in the vicinity… ▽ More Observations of electron-hole asymmetry in transport through graphene devices at high magnetic field challenge prevalent models of the graphene quantum Hall effect. Here, we study this asymmetry both in conventional magnetotransport and in scanning gate microscopy maps measured in an encapsulated graphene constriction. We reveal that the presence of upstream modes and local doping in the vicinity of electrical contacts leads to a totally different picture of topological breakdown for electrons and holes, explaining the observed asymmetry. △ Less

Submitted 18 March, 2021; originally announced March 2021.

Comments: 5 pages, 5 figures

Upstream modes and antidots poison graphene quantum Hall effect

Authors: Nicolas Moreau, Boris Brun, Sowmya Somanchi, Kenji Watanabe, Takashi Taniguchi, Christoph Stampfer, Benoit Hackens

Abstract: The quantum Hall effect is the seminal example of topological protection, as charge carriers are transmitted through one-dimensional edge channels where backscattering is prohibited. Graphene has made its marks as an exceptional platform to reveal new facets of this remarkable property. However, in conventional Hall bar geometries, topological protection of graphene edge channels is found regretta… ▽ More The quantum Hall effect is the seminal example of topological protection, as charge carriers are transmitted through one-dimensional edge channels where backscattering is prohibited. Graphene has made its marks as an exceptional platform to reveal new facets of this remarkable property. However, in conventional Hall bar geometries, topological protection of graphene edge channels is found regrettably less robust than in high mobility semi-conductors. Here, we explore graphene quantum Hall regime at the local scale, using a scanning gate microscope. We reveal the detrimental influence of antidots along the graphene edges, mediating backscattering towards upstream edge channels, hence triggering topological breakdown. Combined with simulations, our experimental results provide further insights into graphene quantum Hall channels vulnerability. In turn, this may ease future developments towards precise manipulation of topologically protected edge channels hosted in various types of two-dimensional crystals. △ Less

Submitted 19 April, 2021; v1 submitted 23 October, 2020; originally announced October 2020.

Comments: 6 pages, 4 figures

Accurate characterization of tip-induced potential using electron interferometry

Authors: A. Iordanescu, S. Toussaint, G. Bachelier, S. Fallahi, C. G. Gardner, M. J. Manfra, B. Hackens, B. Brun

Abstract: Using the tip of a scanning probe microscope as a local electrostatic gate gives access to real space information on electrostatics as well as charge transport at the nanoscale, provided that the tip-induced electrostatic potential is well known. Here, we focus on the accurate characterization of the tip potential, in a regime where the tip locally depletes a two-dimensional electron gas (2DEG) ho… ▽ More Using the tip of a scanning probe microscope as a local electrostatic gate gives access to real space information on electrostatics as well as charge transport at the nanoscale, provided that the tip-induced electrostatic potential is well known. Here, we focus on the accurate characterization of the tip potential, in a regime where the tip locally depletes a two-dimensional electron gas (2DEG) hosted in a semiconductor heterostructure. Scanning the tip in the vicinity of a quantum point contact defined in the 2DEG, we observe Fabry-Pérot interference fringes at low temperature in maps of the device conductance. We exploit the evolution of these fringes with the tip voltage to measure the change in depletion radius by electron interferometry. We find that a semi-classical finite-element self-consistent model taking into account the conical shape of the tip reaches a faithful correspondence with the experimental data. △ Less

Submitted 24 September, 2020; originally announced September 2020.

Journal ref: Appl. Phys. Lett. 117, 193101 (2020)

Optimizing Dirac fermions quasi-confinement by potential smoothness engineering

Authors: Boris Brun, Nicolas Moreau, Sowmya Somanchi, Viet-Hung Nguyen, Alina Mreńca-Kolasińska, Kenji Watanabe, Takashi Taniguchi, Jean-Christophe Charlier, Christoph Stampfer, Benoit Hackens

Abstract: With the advent of high mobility encapsulated graphene devices, new electronic components ruled by Dirac fermions optics have been envisioned and realized. The main building blocks of electron-optics devices are gate-defined p-n junctions, which guide, transmit and refract graphene charge carriers, just like prisms and lenses in optics. The reflection and transmission are governed by the p-n junct… ▽ More With the advent of high mobility encapsulated graphene devices, new electronic components ruled by Dirac fermions optics have been envisioned and realized. The main building blocks of electron-optics devices are gate-defined p-n junctions, which guide, transmit and refract graphene charge carriers, just like prisms and lenses in optics. The reflection and transmission are governed by the p-n junction smoothness, a parameter difficult to tune in conventional devices. Here we create p-n junctions in graphene, using the polarized tip of a scanning gate microscope, yielding Fabry-Pérot interference fringes in the device resistance. We control the p-n junctions smoothness using the tip-to-graphene distance, and show increased interference contrast using smoother potential barriers. Extensive tight-binding simulation reveal that smooth potential barriers induce a pronounced quasi-confinement of Dirac fermions below the tip, yielding enhanced interference contrast. On the opposite, sharp barriers are excellent Dirac fermions transmitters and lead to poorly contrasted interferences. Our work emphasizes the importance of junction smoothness for relativistic electron optics devices engineering. △ Less

Submitted 27 November, 2019; originally announced November 2019.

Imaging Dirac fermions flow through a circular Veselago lens

Authors: Boris Brun, Nicolas Moreau, Sowmya Somanchi, Viet-Hung Nguyen, Kenji Watanabe, Takashi Taniguchi, Jean-Christophe Charlier, Christoph Stampfer, Benoit Hackens

Abstract: Graphene charge carriers behave as relativistic massless fermions, thereby exhibiting a variety of counter-intuitive behaviors. In particular, at p-n junctions, they behave as photons encountering a negative index media, therefore experiencing a peculiar refraction known as Veselago lensing. However, the way Dirac fermions flow through a Veselago lens remains largely unexplored experimentally. Her… ▽ More Graphene charge carriers behave as relativistic massless fermions, thereby exhibiting a variety of counter-intuitive behaviors. In particular, at p-n junctions, they behave as photons encountering a negative index media, therefore experiencing a peculiar refraction known as Veselago lensing. However, the way Dirac fermions flow through a Veselago lens remains largely unexplored experimentally. Here, a novel approach to create a movable and tunable circular p-n junction in graphene is proposed, using the polarized tip of a scanning gate microscope. Scanning the tip in the vicinity of a graphene constriction while recording the device conductance yields images related to the electron flow through a circular Veselago lens, revealing a high current density in the lens core, as well as two low current density zones along transport axis. Tight-binding simulations reveal the crucial role of the p-n junction smoothness on these phenomena. The present research adds new dimensions in the control and understanding of Dirac fermions optical elements, a prerequisite to engineer relativistic electron optics devices. △ Less

Submitted 19 June, 2019; v1 submitted 7 November, 2018; originally announced November 2018.

Comments: Accepted for publication in Physical Review B, Rapid Communications

Journal ref: Phys. Rev. B 100, 041401 (2019)

Thermoelectric Scanning Gate Interferometry on a Quantum Point Contact

Authors: B. Brun, F. Martins, S. Faniel, A. Cavanna, C. Ulysse, A. Ouerghi, U. Gennser, D. Mailly, P. Simon, S. Huant, M. Sanquer, H. Sellier, V. Bayot, B. Hackens

Abstract: We introduce a new scanning probe technique derived from scanning gate microscopy (SGM) in order to investigate thermoelectric transport in two-dimensional semiconductor devices. The thermoelectric scanning gate Microscopy (TSGM) consists in measuring the thermoelectric voltage induced by a temperature difference across a device, while scanning a polarized tip that locally changes the potential la… ▽ More We introduce a new scanning probe technique derived from scanning gate microscopy (SGM) in order to investigate thermoelectric transport in two-dimensional semiconductor devices. The thermoelectric scanning gate Microscopy (TSGM) consists in measuring the thermoelectric voltage induced by a temperature difference across a device, while scanning a polarized tip that locally changes the potential landscape. We apply this technique to perform interferometry of the thermoelectric transport in a quantum point contact (QPC). We observe an interference pattern both in SGM and TSGM images, and evidence large differences between the two signals in the low density regime of the QPC. In particular, a large phase jump appears in the interference fringes recorded by TSGM, which is not visible in SGM. We discuss this difference of sensitivity using a microscopic model of the experiment, based on the contribution from a resonant level inside or close to the QPC. This work demonstrates that combining scanning gate microscopy with thermoelectric measurements offers new information as compared to SGM, and provides a direct access to the derivative of the device transmission with respect to energy, both in amplitude and in phase. △ Less

Submitted 15 March, 2019; v1 submitted 30 March, 2018; originally announced April 2018.

Comments: Accepted for publication in Physical Review Applied

Journal ref: Phys. Rev. Applied 11, 034069 (2019)

Electron phase shift at the zero-bias anomaly of quantum point contacts

Authors: B. Brun, F. Martins, S. Faniel, B. Hackens, A. Cavanna, C. Ulysse, A. Ouerghi, U. Gennser, D. Mailly, P. Simon, S. Huant, V. Bayot, M. Sanquer, H. Sellier

Abstract: The Kondo effect is the many-body screening of a local spin by a cloud of electrons at very low temperature. It has been proposed as an explanation of the zero-bias anomaly in quantum point contacts where interactions drive a spontaneous charge localization. However, the Kondo origin of this anomaly remains under debate, and additional experimental evidence is necessary. Here we report on the firs… ▽ More The Kondo effect is the many-body screening of a local spin by a cloud of electrons at very low temperature. It has been proposed as an explanation of the zero-bias anomaly in quantum point contacts where interactions drive a spontaneous charge localization. However, the Kondo origin of this anomaly remains under debate, and additional experimental evidence is necessary. Here we report on the first phase-sensitive measurement of the zero-bias anomaly in quantum point contacts using a scanning gate microscope to create an electronic interferometer. We observe an abrupt shift of the interference fringes by half a period in the bias range of the zero-bias anomaly, a behavior which cannot be reproduced by single-particle models. We instead relate it to the phase shift experienced by electrons scattering off a Kondo system. Our experiment therefore provides new evidence of this many-body effect in quantum point contacts. △ Less

Submitted 29 March, 2016; originally announced March 2016.

Journal ref: Physical Review Letters 116, 136801 (2016)

Interference features in scanning gate conductance maps of quantum point contacts with disorder

Authors: K. Kolasiński, B. Szafran, B. Brun, H. Sellier

Abstract: We consider quantum point contacts (QPCs) defined within disordered two-dimensional electron gases as studied by scanning gate microscopy. We evaluate the conductance maps in the Landauer approach and wave function picture of electron transport for samples with both low and high electron mobility at finite temperatures. We discuss the spatial distribution of the impurities in the context of the br… ▽ More We consider quantum point contacts (QPCs) defined within disordered two-dimensional electron gases as studied by scanning gate microscopy. We evaluate the conductance maps in the Landauer approach and wave function picture of electron transport for samples with both low and high electron mobility at finite temperatures. We discuss the spatial distribution of the impurities in the context of the branched electron flow. We reproduce the surprising temperature stability of the experimental interference fringes far from the QPC. Next, we discuss -- previously undescribed -- funnel-shaped features that accompany splitting of the branches visible in previous experiments. Finally, we study elliptical interference fringes formed by an interplay of scattering by the point-like impurities and by the scanning probe. We discuss the details of the elliptical features as functions of the tip voltage and the temperature, showing that the first interference fringe is very robust against the thermal widening of the Fermi level. We present a simple analytical model that allows for extraction of the impurity positions and the electron gas depletion radius induced by the negatively charged tip of the atomic force microscope, and apply this model on experimental scanning gate images showing such elliptical fringes. △ Less

Submitted 23 March, 2016; originally announced March 2016.

Journal ref: Phys. Rev. B 94, 075301 (2016)

Wigner and Kondo physics in quantum point contacts revealed by scanning gate microscopy

Authors: B. Brun, F. Martins, S. Faniel, B. Hackens, G. Bachelier, A. Cavanna, C. Ulysse, A. Ouerghi, U. Gennser, D. Mailly, S. Huant, V. Bayot, M. Sanquer, H. Sellier

Abstract: Quantum point contacts exhibit mysterious conductance anomalies in addition to well known conductance plateaus at multiples of 2e^2/h. These 0.7 and zero-bias anomalies have been intensively studied, but their microscopic origin in terms of many-body effects is still highly debated. Here we use the charged tip of a scanning gate microscope to tune in situ the electrostatic potential of the point c… ▽ More Quantum point contacts exhibit mysterious conductance anomalies in addition to well known conductance plateaus at multiples of 2e^2/h. These 0.7 and zero-bias anomalies have been intensively studied, but their microscopic origin in terms of many-body effects is still highly debated. Here we use the charged tip of a scanning gate microscope to tune in situ the electrostatic potential of the point contact. While sweeping the tip distance, we observe repetitive splittings of the zero-bias anomaly, correlated with simultaneous appearances of the 0.7 anomaly. We interpret this behaviour in terms of alternating equilibrium and non-equilibrium Kondo screenings of different spin states localized in the channel. These alternating Kondo effects point towards the presence of a Wigner crystal containing several charges with different parities. Indeed, simulations show that the electron density in the channel is low enough to reach one-dimensional Wigner crystallization over a size controlled by the tip position. △ Less

Submitted 18 December, 2014; v1 submitted 31 July, 2013; originally announced July 2013.

Journal ref: Nature Communications 5, 4290 (2014)

Subnatural linewidth in a strongly-driven closed $F \rightarrow F'$ transition

Authors: Sapam Ranjita Chanu, Alok K. Singh, Boris Brun, Kanhaiya Pandey, Vasant Natarajan

Abstract: We observe linewidths below the natural linewidth for a probe laser on a {\it two-level system}, when the same transition is driven by a strong control laser. We take advantage of the fact that each level is made of multiple magnetic sublevels, and use the phenomenon of electromagnetically induced transparency or absorption in multilevel systems. Optical pumping by the control laser redistributes… ▽ More We observe linewidths below the natural linewidth for a probe laser on a {\it two-level system}, when the same transition is driven by a strong control laser. We take advantage of the fact that each level is made of multiple magnetic sublevels, and use the phenomenon of electromagnetically induced transparency or absorption in multilevel systems. Optical pumping by the control laser redistributes the population so that only a few sublevels contribute to the probe absorption. We observe more than a factor of 3 reduction in linewidth in the $D_2$ line of Rb in room-temperature vapor. The observations can be understood from a density-matrix analysis of the sublevel structure. △ Less

Submitted 19 August, 2010; originally announced August 2010.

Comments: 4 pages, 5 figures

The VIMOS VLT Deep Survey - First epoch VVDS-Deep survey: 11564 spectra with 17.5<=IAB<=24, and the redshift distribution over 0< z <=5

Authors: O. Le Fevre, G. Vettolani, B. Garilli, L. Tresse, D. Bottini V. Le Brun, D. Maccagni, J. P. Picat, R. Scaramella, M. Scodeggio, A. Zanichelli, C. Adami, S. Bardelli, M. Bolzonella, A. Cappi, S. Charlot, T. Contini, S. Foucaud, P. Franzetti, I. Gavignaud, L. Guzzo, O. Ilbert, A. Iovino, H. J. McCracken, B. Marano, C. Marinoni , et al. (19 additional authors not shown)

Abstract: This paper presents the ``First Epoch'' sample from the VIMOS VLT Deep Survey (VVDS). The VVDS goals, observations, data reduction with VIPGI, and redshift measurement with KBRED are discussed. Data have been obtained with the VIsible Multi Object Spectrograph (VIMOS) on the ESO-VLT UT3, allowing to observe ~600 slits simultaneously at R~230. A total of 11564 objects have been observed in the VV… ▽ More This paper presents the ``First Epoch'' sample from the VIMOS VLT Deep Survey (VVDS). The VVDS goals, observations, data reduction with VIPGI, and redshift measurement with KBRED are discussed. Data have been obtained with the VIsible Multi Object Spectrograph (VIMOS) on the ESO-VLT UT3, allowing to observe ~600 slits simultaneously at R~230. A total of 11564 objects have been observed in the VVDS-02h and VVDS-CDFS Deep fields over a total area of 0.61deg^2, selected solely on the basis of apparent magnitude 17.5 <=I_{AB} <=24. The VVDS covers the redshift range 0 < z <= 5. It is successfully going through the ``redshift desert'' 1.5<z<2.2, while the range 2.2<z<2.7 remains of difficult access because of the VVDS wavelength coverage.A total of 9677 galaxies have a redshift measurement, 836 are stars, 90 are AGNs, and a redshift could not be measured for 961 objects. There are 1065 galaxies with a measured redshift z>1.4. The survey reaches a redshift measurement completeness of 78% overall (93% including less reliable objects), with a spatial sampling of the population of galaxies of 25% and ~30% in the VVDS-02h and VVDS-CDFS. The redshift accuracy measured from repeated observations with VIMOS and comparison to other surveys is ~276km/s. From this sample we present for the first time the redshift distribution of a magnitude limited spectroscopic sample down to IAB=24. The redshift distribution has a median of z=0.62, z=0.65, z=0.70, and z=0.76, for magnitude limited samples with IAB<=22.5, 23, 23.5, and 24. A high redshift tail above redshift 2 and up to redshift 5 becomes readily apparent for IAB>23.5, probing the bright star forming population of galaxies. This sample provides an unprecedented dataset to study galaxy evolution over 90% of the life of the universe △ Less

Submitted 2 July, 2005; v1 submitted 6 September, 2004; originally announced September 2004.

Comments: 30 pages, accepted 22-Feb-05 in A&A

Journal ref: Astron.Astrophys.439:845-862,2005