Showing 1–29 of 29 results for author: Zannier, V

Engineering nanowire quantum dots with iontronics

Authors: Domenic Prete, Valeria Demontis, Valentina Zannier, Lucia Sorba, Fabio Beltram, Francesco Rossella

Abstract: Achieving stable, high-quality quantum dots has proven challenging within device architectures rooted in conventional solid-state device fabrication paradigms. In fact, these are grappled with complex protocols in order to balance ease of realization, scalability, and quantum transport properties. Here, we demonstrate a novel paradigm of semiconductor quantum dot engineering by exploiting ion gati… ▽ More Achieving stable, high-quality quantum dots has proven challenging within device architectures rooted in conventional solid-state device fabrication paradigms. In fact, these are grappled with complex protocols in order to balance ease of realization, scalability, and quantum transport properties. Here, we demonstrate a novel paradigm of semiconductor quantum dot engineering by exploiting ion gating. Our approach is found to enable the realization and control of a novel quantum dot system: the iontronic quantum dot. Clear Coulomb blockade peaks and their dependence on an externally applied magnetic field are reported, together with the impact of device architecture and confinement potential on quantum dot quality. Devices incorporating two identical quantum dots in series are realized, addressing the reproducibility of the developed approach. The iontronic quantum dot represents a novel class of zero-dimensional quantum devices engineered to overcome the need for thin dielectric layers, facilitating single-step device fabrication. Overall, the reported approach holds the potential to revolutionize the development of functional quantum materials and devices, driving rapid progress in solid state quantum technologies △ Less

Submitted 24 June, 2024; originally announced June 2024.

Metal Nanoparticle-Functionalized Three-Dimensional Graphene: a versatile platform towards sensors and energy-related applications

Authors: Emanuele Pompei, Ylea Vlamidis, Letizia Ferbel, Valentina Zannier, Silvia Rubini, Daniel Arenas Esteban, Sara Bals, Carmela Marinelli, Georg Pfusterschmied, Markus Leitgeb, Ulrich Schmid, Stefan Heun, Stefano Veronesi

Abstract: We demonstrate the first successful functionalization of epitaxial three-dimensional graphene with metal nanoparticles. The functionalization is obtained by immersing the 3D graphene in a nanoparticle colloidal solution. This method is versatile and here is demonstrated for gold and palladium, but can be extended to other types and shapes of nanoparticles. We have measured the nanoparticle density… ▽ More We demonstrate the first successful functionalization of epitaxial three-dimensional graphene with metal nanoparticles. The functionalization is obtained by immersing the 3D graphene in a nanoparticle colloidal solution. This method is versatile and here is demonstrated for gold and palladium, but can be extended to other types and shapes of nanoparticles. We have measured the nanoparticle density on the top-surface and in the porous layer volume by Scanning Electron Microscopy and Scanning Transmission Electron Microscopy. Samples exhibit a high coverage of nanoparticles with minimal clustering. High quality graphene has been demonstrated to promote the functionalization leading to higher nanoparticle density, both on the surface and in the pores. X-ray Photoelectron Spectroscopy allowed to verify the absence of contamination after the functionalization process. Moreover, it confirmed the thermal stability of the Au- and Pd-functionalized three-dimensional graphene up to 530°C. Our approach opens up new avenues for utilizing three-dimensional graphene as a versatile platform for catalytic applications, sensors, and energy storage and conversion. △ Less

Submitted 25 October, 2023; originally announced October 2023.

GaAs/GaP Superlattice Nanowires for Tailoring Phononic Properties at the Nanoscale: Implications for Thermal Engineering

Authors: Aswathi K. Sivan, Begoña Abad, Tommaso Albrigi, Omer Arif, Johannes Trautvetter, Alicia Ruiz Caridad, Chaitanya Arya, Valentina Zannier, Lucia Sorba, Riccardo Rurali, Ilaria Zardo

Abstract: The possibility to tune the functional properties of nanomaterials is key to their technological applications. Superlattices, i.e., periodic repetitions of two or more materials in different dimensions are being explored for their potential as materials with tailor-made properties. Meanwhile, nanowires offer a myriad of possibilities to engineer systems at the nanoscale, as well as to combine mate… ▽ More The possibility to tune the functional properties of nanomaterials is key to their technological applications. Superlattices, i.e., periodic repetitions of two or more materials in different dimensions are being explored for their potential as materials with tailor-made properties. Meanwhile, nanowires offer a myriad of possibilities to engineer systems at the nanoscale, as well as to combine materials which cannot be put together in conventional heterostructures due to the lattice mismatch. In this work, we investigate GaAs/GaP superlattices embedded in GaP nanowires and demonstrate the tunability of their phononic and optoelectronic properties by inelastic light scattering experiments corroborated by ab initio calculations. We observe clear modifications in the dispersion relation for both acoustic and optical phonons in the superlattices nanowires. We find that by controlling the superlattice periodicity we can achieve tunability of the phonon frequencies. We also performed wavelength-dependent Raman microscopy on GaAs/GaP superlattice nanowires and our results indicate a reduction in the electronic bandgap in the superlattice compared to the bulk counterpart. All our experimental results are rationalized with the help of ab initio density functional perturbation theory (DFPT) calculations. This work sheds fresh insights into how material engineering at the nanoscale can tailor phonon dispersion and open pathways for thermal engineering. △ Less

Submitted 22 September, 2023; originally announced September 2023.

Comments: 41 pages including supporting information. Accepted for publication in ACS Applied Nano Materials

Half-integer Shapiro steps in highly transmissive InSb nanoflag Josephson junctions

Authors: Andrea Iorio, Alessandro Crippa, Bianca Turini, Sedighe Salimian, Matteo Carrega, Luca Chirolli, Valentina Zannier, Lucia Sorba, Elia Strambini, Francesco Giazotto, Stefan Heun

Abstract: We investigate a ballistic InSb nanoflag-based Josephson junction with Nb superconducting contacts. The high transparency of the superconductor-semiconductor interfaces enables the exploration of quantum transport with parallel short and long conducting channels. Under microwave irradiation, we observe half-integer Shapiro steps that are robust to temperature, suggesting their possible non-equilib… ▽ More We investigate a ballistic InSb nanoflag-based Josephson junction with Nb superconducting contacts. The high transparency of the superconductor-semiconductor interfaces enables the exploration of quantum transport with parallel short and long conducting channels. Under microwave irradiation, we observe half-integer Shapiro steps that are robust to temperature, suggesting their possible non-equilibrium origin. Our results demonstrate the potential of ballistic InSb nanoflags Josephson junctions as a valuable platform for understanding the physics of hybrid devices and investigating their non-equilibrium dynamics. △ Less

Submitted 10 March, 2023; originally announced March 2023.

Comments: 37 pages, 14 figures

Journal ref: Phys. Rev. Research 5, 033015 (2023)

Josephson Diode Effect in High Mobility InSb Nanoflags

Authors: Bianca Turini, Sedighe Salimian, Matteo Carrega, Andrea Iorio, Elia Strambini, Francesco Giazotto, Valentina Zannier, Lucia Sorba, Stefan Heun

Abstract: We report evidence of non-reciprocal dissipation-less transport in single ballistic InSb nanoflag Josephson junctions, owing to a strong spin-orbit coupling. Applying an in-plane magnetic field, we observe an inequality in supercurrent for the two opposite current propagation directions. This demonstrates that these devices can work as Josephson diodes, with dissipation-less current flowing in onl… ▽ More We report evidence of non-reciprocal dissipation-less transport in single ballistic InSb nanoflag Josephson junctions, owing to a strong spin-orbit coupling. Applying an in-plane magnetic field, we observe an inequality in supercurrent for the two opposite current propagation directions. This demonstrates that these devices can work as Josephson diodes, with dissipation-less current flowing in only one direction. For small fields, the supercurrent asymmetry increases linearly with the external field, then it saturates as the Zeeman energy becomes relevant, before it finally decreases to zero at higher fields. We show that the effect is maximum when the in-plane field is perpendicular to the current vector, which identifies Rashba spin-orbit coupling as the main symmetry-breaking mechanism. While a variation in carrier concentration in these high-quality InSb nanoflags does not significantly influence the diode effect, it is instead strongly suppressed by an increase in temperature. Our experimental findings are consistent with a model for ballistic short junctions and show that the diode effect is intrinsic to this material. Our results establish InSb Josephson diodes as a useful element in superconducting electronics. △ Less

Submitted 18 July, 2022; originally announced July 2022.

Journal ref: Nano Lett. 2022, 22, 8502-8508

Giant reduction of thermal conductivity in twinning superlattice InAsSb nanowires

Authors: Lorenzo Peri, Domenic Prete, Valeria Demontis, Valentina Zannier, Francesca Rossi, Lucia Sorba, Fabio Beltram, Francesco Rossella

Abstract: Semiconductor nanostructures hold great promise for high-efficiency waste heat recovery exploiting thermoelectric energy conversion, a technological breakthrough that could significantly contribute to providing environmentally friendly energy sources as well as in enabling the realization of self-powered biomedical and wearable devices. A crucial requirement in this field is the reduction of the t… ▽ More Semiconductor nanostructures hold great promise for high-efficiency waste heat recovery exploiting thermoelectric energy conversion, a technological breakthrough that could significantly contribute to providing environmentally friendly energy sources as well as in enabling the realization of self-powered biomedical and wearable devices. A crucial requirement in this field is the reduction of the thermal conductivity of the thermoelectric material without detrimentally affecting its electrical transport properties. In this work we demonstrate a drastic reduction of thermal conductivity in III-V semiconductor nanowires due to the presence of intentionally realized periodic crystal lattice twin planes. The electrical and thermal transport of these nanostructures, known as twinning superlattice nanowires, have been probed and compared with their twin-free counterparts, showing a one order of magnitude decrease of thermal conductivity while maintaining unaltered electrical transport properties, thus yielding a factor ten enhancement of the thermoelectric figure of merit, ZT. Our study reports for the first time the experimental measurement of electrical and thermal properties in twinning superlattice nanowires, which emerge as a novel class of nanomaterials for high efficiency thermoelectric energy harvesting. △ Less

Submitted 11 May, 2022; originally announced May 2022.

Spin Cross-Correlation Experiments in an Electron Entangler

Authors: Arunav Bordoloi, Valentina Zannier, Lucia Sorba, Christian Schönenberger, Andreas Baumgartner

Abstract: Correlations are fundamental in describing many body systems - not only in natural sciences. However, in experiments, correlations are notoriously difficult to assess on the microscopic scale, especially for electron spins. Here, we demonstrate a direct measurement of the spin cross-correlations between the currents of a Cooper pair splitter, an electronic device that emits electrons originating f… ▽ More Correlations are fundamental in describing many body systems - not only in natural sciences. However, in experiments, correlations are notoriously difficult to assess on the microscopic scale, especially for electron spins. Here, we demonstrate a direct measurement of the spin cross-correlations between the currents of a Cooper pair splitter, an electronic device that emits electrons originating from Cooper pairs in a superconductor. While it is firmly established theoretically that these electron pairs form maximally spin-entangled singlet states with opposite spin projections, no spin correlation experiments have been demonstrated so far. We use ferromagnetic sidegates, compatible with superconducting electronic structures, to individually spin polarize the transmissions of two quantum dots fabricated in the two electronic paths, which act as tunable spin filters. The signals are detected in standard transport and in highly sensitive transconductance experiments. We find that the spin-cross correlation is negative, compatible with spin singlet emission, and deviates from the ideal value mostly due to a finite overlap of the Zeeman split quantum dot states. Our results demonstrate a new route to perform spin auto- and cross correlation experiments in nanometer scaled electronic devices, especially suitable for those relying on magnetic field sensitive superconducting elements, like unconventional, triplet or topologically non-trivial superconductors, or to perform Bell tests with massive particles, like electrons. △ Less

Submitted 15 March, 2022; originally announced March 2022.

Journal ref: Nature 612, 454-458 (2022)

High Mobility Free-Standing InSb Nanoflags Grown On InP Nanowire Stems For Quantum Devices

Authors: Isha Verma, Sedighe Salimian, Valentina Zannier, Stefan Heun, Francesca Rossi, Daniele Ercolani, Fabio Beltram, Lucia Sorba

Abstract: High quality heteroepitaxial two-dimensional (2D) InSb layers are very difficult to realize owing to the large lattice mismatch with other widespread semiconductor substrates. A way around this problem is to grow free-standing 2D InSb nanostructures on nanowire (NW) stems, thanks to the capability of NWs to efficiently relax elastic strain along the sidewalls when lattice-mismatched semiconductor… ▽ More High quality heteroepitaxial two-dimensional (2D) InSb layers are very difficult to realize owing to the large lattice mismatch with other widespread semiconductor substrates. A way around this problem is to grow free-standing 2D InSb nanostructures on nanowire (NW) stems, thanks to the capability of NWs to efficiently relax elastic strain along the sidewalls when lattice-mismatched semiconductor systems are integrated. In this work, we optimize the morphology of free-standing 2D InSb nanoflags (NFs). In particular, robust NW stems, optimized growth parameters, and the use of reflection high-energy electron diffraction (RHEED), to precisely orient the substrate for preferential growth, are implemented to increase the lateral size of the 2D InSb NFs. Transmission electron microscopy (TEM) analysis of these NFs reveals defect-free zinc blend crystal structure, stoichiometric composition, and relaxed lattice parameters. The resulting NFs are large enough to fabricate Hall-bar contacts with suitable length-to-width ratio enabling precise electrical characterization. An electron mobility of ~29,500 cm2/Vs is measured, which is the highest value reported for free-standing 2D InSb nanostrutures in literature. We envision the use of 2D InSb NFs for fabrication of advanced quantum devices. △ Less

Submitted 4 November, 2021; originally announced November 2021.

Comments: http://hdl.handle.net/11384/105250

Journal ref: ACS Appl. Nano Mater. 2021, 4, 5825-5833

Gate-controlled Supercurrent in Ballistic InSb Nanoflag Josephson Junctions

Authors: Sedighe Salimian, Matteo Carrega, Isha Verma, Valentina Zannier, Michal P. Nowak, Fabio Beltram, Lucia Sorba, Stefan Heun

Abstract: High-quality III-V narrow band gap semiconductor materials with strong spin-orbit coupling and large Lande g-factor provide a promising platform for next-generation applications in the field of high-speed electronics, spintronics, and quantum computing. Indium Antimonide (InSb) offers a narrow band gap, high carrier mobility, and a small effective mass, and thus is very appealing in this context.… ▽ More High-quality III-V narrow band gap semiconductor materials with strong spin-orbit coupling and large Lande g-factor provide a promising platform for next-generation applications in the field of high-speed electronics, spintronics, and quantum computing. Indium Antimonide (InSb) offers a narrow band gap, high carrier mobility, and a small effective mass, and thus is very appealing in this context. In fact, this material has attracted tremendous attention in recent years for the implementation of topological superconducting states supporting Majorana zero modes. However, high-quality heteroepitaxial two-dimensional (2D) InSb layers are very diffcult to realize owing to the large lattice mismatch with all commonly available semiconductor substrates. An alternative pathway is the growth of free-standing single-crystalline 2D InSb nanostructures, the so-called nanoflags. Here we demonstrate fabrication of ballistic Josephson-junction devices based on InSb nanoflags with Ti/Nb contacts that show gate-tunable proximity-induced supercurrent up to 50 nA at 250 mK and a sizable excess current. The devices show clear signatures of subharmonic gap structures, indicating phase-coherent transport in the junction and a high transparency of the interfaces. This places InSb nanoflags in the spotlight as a versatile and convenient 2D platform for advanced quantum technologies. △ Less

Submitted 2 November, 2021; originally announced November 2021.

Journal ref: Appl. Phys. Lett. 119, 214004 (2021)

Quantum-dot single-electron transistor as thermoelectric quantum detectors at terahertz frequencies

Authors: Mahdi Asgari, Dominique Coquillat, Guido Menichetti, Valentina Zannier, Nina Dyakonova, Wojciech Knap, Lucia Sorba, Leonardo Viti, Miriam Serena Vitiello

Abstract: Low dimensional nano-systems are promising candidates for manipulating, controlling and capturing photons with large sensitivities and low-noise. If quantum engineered to tailor the energy of the localized electrons across the desired frequency range, they can allow devising efficient quantum sensors across any frequency domain. Here, we exploit the rich few-electrons physics to develop millimeter… ▽ More Low dimensional nano-systems are promising candidates for manipulating, controlling and capturing photons with large sensitivities and low-noise. If quantum engineered to tailor the energy of the localized electrons across the desired frequency range, they can allow devising efficient quantum sensors across any frequency domain. Here, we exploit the rich few-electrons physics to develop millimeter-wave nanodetectors employing as sensing element an InAs/InAs0.3P0.7 quantum-dot nanowire, embedded in a single electron transistor. Once irradiated with light the deeply localized quantum element exhibits an extra electromotive force driven by the photothermoelectric effect, which is exploited to efficiently sense radiation at 0.6 THz with a noise equivalent power < 8 pWHz-1/2 and almost zero dark current. The achieved results open intriguing perspectives for quantum key distributions, quantum communications and quantum cryptography at terahertz frequencies. △ Less

Submitted 10 September, 2021; originally announced September 2021.

Comments: This is the authors' version of the article submitted to Nano Letters and accepted for publication https://doi.org/10.1021/acs.nanolett.1c02022 (18 Pages, 4 Figures)

Spectroscopy of the local density-of-states in nanowires using integrated quantum dots

Authors: Frederick S. Thomas, Malin Nilsson, Carlo Ciaccia, Christian Jünger, Francesca Rossi, Valentina Zannier, Lucia Sorba, Andreas Baumgartner, Christian Schönenberger

Abstract: In quantum dot (QD) electron transport experiments additional features can appear in the differential conductance $dI/dV$ that do not originate from discrete states in the QD, but rather from a modulation of the density-of-states (DOS) in the leads. These features are particularly pronounced when the leads are strongly confined low dimensional systems, such as in a nanowire (NW) where transport is… ▽ More In quantum dot (QD) electron transport experiments additional features can appear in the differential conductance $dI/dV$ that do not originate from discrete states in the QD, but rather from a modulation of the density-of-states (DOS) in the leads. These features are particularly pronounced when the leads are strongly confined low dimensional systems, such as in a nanowire (NW) where transport is one-dimensional and quasi-zero dimensional lead-states can emerge. In this paper we study such lead-states in InAs NWs. We use a QD integrated directly into the NW during the epitaxial growth as an energetically and spatially well-defined tunnel probe to perform $dI/dV$ spectroscopy of discrete bound states in the `left' and `right' NW lead segments. By tuning a sidegate in close proximity of one lead segment, we can distinguish transport features related to the modulation in the lead DOS and to excited states in the QD. We implement a non-interacting capacitance model and derive expressions for the slopes of QD and lead resonances that appear in two-dimensional plots of $dI/dV$ as a function of source-drain bias and gate voltage in terms of the different lever arms determined by the capacitive couplings. We discuss how the interplay between the lever arms affect the slopes. We verify our model by numerically calculating the $dI/dV$ using a resonant tunneling model with three non-interacting quantum dots in series. Finally, we used the model to describe the measured $dI/dV$ spectra and extract quantitatively the tunnel couplings of the lead segments. Our results constitute an important step towards a quantitative understanding of normal and superconducting subgap states in hybrid NW devices. △ Less

Submitted 23 May, 2021; originally announced May 2021.

Comments: 11 pages, 4 figures

Journal ref: Phys. Rev. B 104, 115415 (2021)

Growth and Strain Relaxation Mechanisms of InAs/InP/GaAsSb Core-Dual-Shell Nanowires

Authors: Omer Arif, Valentina Zannier, Ang Li, Francesca Rossi, Daniele Ercolani, Fabio Beltram, Lucia Sorba

Abstract: The combination of core/shell geometry and band gap engineering in nanowire heterostructures can be employed to realize systems with novel transport and optical properties. Here, we report on the growth of InAs/InP/GaAsSb core-dual-shell nanowires by catalyst-free chemical beam epitaxy on Si(111) substrates. Detailed morphological, structural, and compositional analyses of the nanowires as a funct… ▽ More The combination of core/shell geometry and band gap engineering in nanowire heterostructures can be employed to realize systems with novel transport and optical properties. Here, we report on the growth of InAs/InP/GaAsSb core-dual-shell nanowires by catalyst-free chemical beam epitaxy on Si(111) substrates. Detailed morphological, structural, and compositional analyses of the nanowires as a function of growth parameters were carried out by scanning and transmission electron microscopy and by energy-dispersive X-ray spectroscopy. Furthermore, by combining the scanning transmission electron microscopy-Moire technique with geometric phase analysis, we studied the residual strain and the relaxation mechanisms in this system. We found that InP shell facets are well-developed along all the crystallographic directions only when the nominal thickness is above 1 nm, suggesting an island-growth mode. Moreover, the crystallographic analysis indicates that both InP and GaAsSb shells grow almost coherently to the InAs core along the 112 direction and elastically compressed along the 110 direction. For InP shell thickness above 8 nm, some dislocations and roughening occur at the interfaces. This study provides useful general guidelines for the fabrication of high-quality devices based on these core-dual-shell nanowires. △ Less

Submitted 3 February, 2021; originally announced February 2021.

Comments: This document is the Accepted Manuscript version of a Published Work that appeared in final form in Crystal Growth and Design, copyright \c{opyright} American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/acs.cgd.9b01421

Journal ref: Crystal Growth & Design 2020 20 (2), 1088-1096

Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy

Authors: Eva A. A. Pogna, Mahdi Asgari, Valentina Zannier, Lucia Sorba, Leonardo Viti, Miriam S. Vitiello

Abstract: Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their remarkable combination of low noise-equivalent powers (< 1 nW/Hz$^{1/2}$) and high responsivities (> 100 V/W). Nano-engineering a NW photodetector combining hi… ▽ More Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their remarkable combination of low noise-equivalent powers (< 1 nW/Hz$^{1/2}$) and high responsivities (> 100 V/W). Nano-engineering a NW photodetector combining high sensitivity with high speed (sub-ns) in the THz regime at RT is highly desirable for many frontier applications in quantum optics and nanophotonics, but this requires a clear understanding of the origin of the photo-response. Conventional electrical and optical measurements, however, cannot unambiguously determine the dominant detection mechanism due to inherent device asymmetry that allows different processes to be simultaneously activated. Here, we innovatively capture snapshots of the photo-response of individual InAs nanowires via high spatial resolution (35 nm) THz photocurrent nanoscopy. By coupling a THz quantum cascade laser to scattering-type scanning near-field optical microscopy (s-SNOM) and monitoring both electrical and optical readouts, we simultaneously measure transport and scattering properties. The spatially resolved electric response provides unambiguous signatures of photo-thermoelectric or bolometric currents whose interplay is discussed as a function of photon density and material doping, therefore providing a route to engineer photo-responses by design. △ Less

Submitted 21 November, 2020; originally announced November 2020.

Gate-controlled Suspended Titanium Nanobridge Supercurrent Transistor

Authors: M. Rocci, G. De Simoni, C. Puglia, D. Degli Esposti, E. Strambini, V. Zannier, L. Sorba, F. Giazotto

Abstract: In a family of experiments carried on all-metallic supercurrent nano-transistors a surprising gating effect has been recently shown. These include the full suppression of the critical supercurrent, the increase of quasiparticle population, the manipulation of the superconducting phase, and the broadening of the switching current distributions. Aside from the high potential for future applications,… ▽ More In a family of experiments carried on all-metallic supercurrent nano-transistors a surprising gating effect has been recently shown. These include the full suppression of the critical supercurrent, the increase of quasiparticle population, the manipulation of the superconducting phase, and the broadening of the switching current distributions. Aside from the high potential for future applications, these findings raised fundamental questions on the origin of these phenomena. To date, two complementary hypotheses are under debate: an electrostatically-triggered orbital polarization at the superconductor surface, or the injection of highly-energetic quasiparticles extracted from the gate. Here, we tackle this crucial issue via a fully suspended gate-controlled Ti nano-transistor. Our geometry allows to eliminate any direct injection of quasiparticles through the substrate thereby making cold electron field emission through the vacuum the only possible charge transport mechanism. With the aid of a fully numerical 3D model in combination with the observed phenomenology and thermal considerations we can rule out, with any realistic likelihood, the occurrence of cold electron field emission. Excluding these two trivial phenomena is pivotal in light of understanding the microscopic nature of gating effect in superconducting nanostructures, which represents an unsolved puzzle in contemporary superconductivity. Yet, from the technological point of view, our suspended fabrication technique provides the enabling technology to implement a variety of applications and fundamental studies combining, for instance, superconductivity with nano-mechanics. △ Less

Submitted 23 January, 2021; v1 submitted 12 June, 2020; originally announced June 2020.

Comments: 7 pages, 4 color figures

Journal ref: ACS NANO (2020)

Probing proximity induced superconductivity in InAs nanowire using built-in barriers

Authors: Tosson Elalaily, Olivér Kürtössy, Valentina Zannier, Zoltán Scherübl, István Endre Lukács, Pawan Srivastava, Francesca Rossi, Lucia Sorba, Szabolcs Csonka, Péter Makk

Abstract: Bound states in superconductor-nanowire hybrid devices play a central role, carrying informationon the ground states properties (Shiba or Andreev states) or on the topological properties of thesystem (Majorana states). The spectroscopy of such bound states relies on the formation of well-defined tunnel barriers, usually defined by gate electrodes, which results in smooth tunnel barriers.Here we us… ▽ More Bound states in superconductor-nanowire hybrid devices play a central role, carrying informationon the ground states properties (Shiba or Andreev states) or on the topological properties of thesystem (Majorana states). The spectroscopy of such bound states relies on the formation of well-defined tunnel barriers, usually defined by gate electrodes, which results in smooth tunnel barriers.Here we used thin InP segments embedded into InAs nanowire during the growth process to forma sharp built-in tunnel barrier. Gate dependence and thermal activation measurements have beenused to confirm the presence and estimate the height of this barrier. By coupling these wires tosuperconducting electrodes we have investigated the gate voltage dependence of the induced gap inthe nanowire segment, which we could understand using a simple model based on Andreev boundstates. Our results show that these built-in barriers are promising as future spectroscopic tools △ Less

Submitted 25 January, 2020; originally announced January 2020.

Journal ref: Phys. Rev. Applied 14, 044002 (2020)

A Josephson phase battery

Authors: E. Strambini, A. Iorio, O. Durante, R. Citro, C. Sanz-Fernández, C. Guarcello, I. V. Tokatly, A. Braggio, M. Rocci, N. Ligato, V. Zannier, L. Sorba, F. S. Bergeret, F. Giazotto

Abstract: A battery is a classical apparatus which converts a chemical reaction into a persistent voltage bias able to power electronic circuits. Similarly, a phase battery is a quantum equipment which provides a persistent phase bias to the wave function of a quantum circuit. It represents a key element for quantum technologies based on quantum coherence. Unlike the voltage batteries, a phase battery has n… ▽ More A battery is a classical apparatus which converts a chemical reaction into a persistent voltage bias able to power electronic circuits. Similarly, a phase battery is a quantum equipment which provides a persistent phase bias to the wave function of a quantum circuit. It represents a key element for quantum technologies based on quantum coherence. Unlike the voltage batteries, a phase battery has not been implemented so far, mainly because of the natural rigidity of the quantum phase that, in typical quantum circuits, is imposed by the parity and time-reversal symmetry constrains. Here we report on the first experimental realization of a phase battery in a hybrid superconducting circuit. It consists of an n-doped InAs nanowire with unpaired-spin surface states and proximitized by Al superconducting leads. We find that the ferromagnetic polarization of the unpaired-spin states is efficiently converted into a persistent phase bias $\varphi_0$ across the wire, leading to the anomalous Josephson effect. By applying an external in-plane magnetic field a continuous tuning of $\varphi_0$ is achieved. This allows the charging and discharging of the quantum phase battery and reveals the symmetries of the anomalous Josephson effect predicted by our theoretical model. Our results demonstrate how the combined action of spin-orbit coupling and exchange interaction breaks the phase rigidity of the system inducing a strong coupling between charge, spin and superconducting phase. This interplay opens avenues for topological quantum technologies, superconducting circuitry and advanced schemes of circuit quantum electrodynamics.} △ Less

Submitted 20 June, 2020; v1 submitted 10 January, 2020; originally announced January 2020.

Comments: 6 pages, 3 figures and Supplementary Material

Journal ref: Nature Nanotechnology (2020)

A Double Quantum Dot Spin Valve

Authors: Arunav Bordoloi, Valentina Zannier, Lucia Sorba, Christian Schönenberger, Andreas Baumgartner

Abstract: A most fundamental and longstanding goal in spintronics is to electrically tune highly efficient spin injectors and detectors, preferably compatible with nanoscale electronics. Here, we demonstrate all these points using semiconductor quantum dots (QDs), individually spin-polarized by ferromagnetic split-gates (FSGs). As a proof of principle, we fabricated a double QD spin valve consisting of two… ▽ More A most fundamental and longstanding goal in spintronics is to electrically tune highly efficient spin injectors and detectors, preferably compatible with nanoscale electronics. Here, we demonstrate all these points using semiconductor quantum dots (QDs), individually spin-polarized by ferromagnetic split-gates (FSGs). As a proof of principle, we fabricated a double QD spin valve consisting of two weakly coupled semiconducting QDs in an InAs nanowire (NW), each with independent FSGs that can be magnetized in parallel or anti-parallel. In tunneling magnetoresistance (TMR) experiments at zero external magnetic field, we find a strongly reduced spin valve conductance for the two anti-parallel configurations, with a single QD polarization of $\sim 27\%$. The TMR can be significantly improved by a small external field and optimized gate voltages, which results in a continuously electrically tunable TMR between $+80\%$ and $-90\%$. A simple model quantitatively reproduces all our findings, suggesting a gate tunable QD polarization of $\pm 80\%$. Such versatile spin-polarized QDs are suitable for various applications, for example in spin projection and correlation experiments in a large variety of nanoelectronics experiments. △ Less

Submitted 4 December, 2019; originally announced December 2019.

Orbital Tuning of Tunnel Coupling in InAs/InP Nanowire Quantum Dots

Authors: Zahra Sadre Momtaz, Stefano Servino, Valeria Demontis, Valentina Zannier, Daniele Ercolani, Francesca Rossi, Francesco Rossella, Lucia Sorba, Fabio Beltram, Stefano Roddaro

Abstract: We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated that barrier transparency in this class of devices displays a general trend just depending on the total orbital energy of the trapped electrons. We show that a qualitatively different regime is observed at relatively low f… ▽ More We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated that barrier transparency in this class of devices displays a general trend just depending on the total orbital energy of the trapped electrons. We show that a qualitatively different regime is observed at relatively low filling numbers, where tunneling rates are rather controlled by the axial configuration of the electron orbital. Transmission rates versus filling are further modified by acting on the radial configuration of the orbitals by means of electrostatic gating, and the barrier transparency for the various orbitals is found to evolve as expected from numerical simulations. The possibility to exploit this mechanism to achieve a controlled continuous tuning of the tunneling rate of an individual Coulomb blockade resonance is discussed. △ Less

Submitted 1 February, 2020; v1 submitted 22 November, 2019; originally announced November 2019.

Comments: 7 pages, 5 figures, plus SI

Journal ref: Nano Lett. 2020, 20, 3, 1693-1699

Anisotropies of the g-factor tensor and diamagnetic coefficient in crystal-phase quantum dots in InP nanowires

Authors: Shiyao Wu, Kai Peng, Sergio Battiato, Valentina Zannier, Andrea Bertoni, Guido Goldoni, Xin Xie, Jingnan Yang, Shan Xiao, Chenjiang Qian, Feilong Song, Sibai Sun, Jianchen Dang, Yang Yu, Fabio Beltram, Lucia Sorba, Ang Li, Bei-bei Li, Francesco Rossella, Xiulai Xu

Abstract: Crystal-phase low-dimensional structures offer great potential for the implementation of photonic devices of interest for quantum information processing. In this context, unveiling the fundamental parameters of the crystal phase structure is of much relevance for several applications. Here, we report on the anisotropy of the g-factor tensor and diamagnetic coefficient in wurtzite/zincblende (WZ/ZB… ▽ More Crystal-phase low-dimensional structures offer great potential for the implementation of photonic devices of interest for quantum information processing. In this context, unveiling the fundamental parameters of the crystal phase structure is of much relevance for several applications. Here, we report on the anisotropy of the g-factor tensor and diamagnetic coefficient in wurtzite/zincblende (WZ/ZB) crystal-phase quantum dots (QDs) realized in single InP nanowires. The WZ and ZB alternating axial sections in the NWs are identified by high-angle annular dark-field scanning transmission electron microscopy. The electron (hole) g-factor tensor and the exciton diamagnetic coefficients in WZ/ZB crystal-phase QDs are determined through micro-photoluminescence measurements at low temperature (4.2 K) with different magnetic field configurations, and rationalized by invoking the spin-correlated orbital current model. Our work provides key parameters for band gap engineering and spin states control in crystal-phase low-dimensional structures in nanowires. △ Less

Submitted 19 October, 2019; originally announced October 2019.

Comments: 10 pages, 5 figures

Journal ref: Nano Research, 2019

Investigation of InAs based devices for topological applications

Authors: Matteo Carrega, Stefano Guiducci, Andrea Iorio, Lennart Bours, Elia Strambini, Giorgio Biasiol, Mirko Rocci, Valentina Zannier, Lucia Sorba, Fabio Beltram, Stefano Roddaro, Francesco Giazotto, Stefan Heun

Abstract: Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materials, InAs represents a promising choice, owing to its high quality, large g-factor and spin-orbit component. Here, we report on InAs-based devices both in one-dimensional and two-dimensional configurations. In the former,… ▽ More Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materials, InAs represents a promising choice, owing to its high quality, large g-factor and spin-orbit component. Here, we report on InAs-based devices both in one-dimensional and two-dimensional configurations. In the former, low-temperature measurements on a suspended nanowire are presented, inspecting the intrinsic spin-orbit contribution of the system. In the latter, Josephson Junctions between two Nb contacts comprising an InAs quantum well are investigated. Supercurrent flow is reported, with Nb critical temperature up to T_c~8K. Multiple Andreev reflection signals are observed in the dissipative regime. In both systems, we show that the presence of external gates represents a useful knob, allowing for wide tunability and control of device properties, such as spin-orbit coherence length or supercurrent amplitude. △ Less

Submitted 26 September, 2019; originally announced September 2019.

Comments: 6 pages, 5 figures (Proceeding of the SPIE conference)

Journal ref: Spintronics XII, Proc. of SPIE Vol. 11090, 110903Z (2019)

Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots

Authors: Frederick S. Thomas, Andreas Baumgartner, Lukas Gubser, Christian Jünger, Gergő Fülöp, Malin Nilsson, Francesca Rossi, Valentina Zannier, Lucia Sorba, Christian Schönenberger

Abstract: We present a comprehensive electrical characterization of an InAs/InP nanowire heterostructure, comprising two InP barriers forming a quantum dot (QD), two adjacent lead segments (LSs) and two metallic contacts, and demonstrate how to extract valuable quantitative information of the QD. The QD shows very regular Coulomb blockade (CB) resonances over a large gate voltage range. By analyzing the res… ▽ More We present a comprehensive electrical characterization of an InAs/InP nanowire heterostructure, comprising two InP barriers forming a quantum dot (QD), two adjacent lead segments (LSs) and two metallic contacts, and demonstrate how to extract valuable quantitative information of the QD. The QD shows very regular Coulomb blockade (CB) resonances over a large gate voltage range. By analyzing the resonance line shapes, we map the evolution of the tunnel couplings from the few to the many electron regime, with electrically tunable tunnel couplings from <1 $μ$eV to >600 $μ$eV, and a transition from the temperature to the lifetime broadened regime. The InP segments form tunnel barriers with almost fully symmetric tunnel couplings and a barrier height of ~350 meV. All of these findings can be understood in great detail based on the deterministic material composition and geometry. Our results demonstrate that integrated InAs/InP QDs provide a promising platform for electron tunneling spectroscopy in InAs nanowires, which can readily be contacted by a variety of superconducting materials to investigate subgap states in proximitized NW regions, or be used to characterize thermoelectric nanoscale devices in the quantum regime. △ Less

Submitted 17 September, 2019; originally announced September 2019.

Comments: 8 pages, 4 figures

Proximitized Josephson junctions in highly-doped InAs nanowires robust to optical illumination

Authors: Lily Yang, Stephan Steinhauer, Elia Strambini, Thomas Lettner, Lucas Schweickert, Marijn A. M. Versteegh, Francesco Giazotto, Valentina Zannier, Lucia Sorba, Dmitry Solenov

Abstract: We have studied the effects of optical-frequency light on proximitized InAs/Al Josephson junctions based on highly n-doped InAs nanowires at varying incident photon flux and at three different photon wavelengths. The experimentally obtained IV curves were modeled using a shunted junction model which takes scattering at the contact interfaces into account. The Josephson junctions were found to be s… ▽ More We have studied the effects of optical-frequency light on proximitized InAs/Al Josephson junctions based on highly n-doped InAs nanowires at varying incident photon flux and at three different photon wavelengths. The experimentally obtained IV curves were modeled using a shunted junction model which takes scattering at the contact interfaces into account. The Josephson junctions were found to be surprisingly robust, interacting with the incident radiation only through heating, whereas above the critical current our devices showed non-thermal effects resulting from photon exposure. Our work provides important guidelines for the co-integration of Josephson junctions alongside quantum photonic circuits and lays the foundation for future work on nanowire-based hybrid photon detectors. △ Less

Submitted 17 September, 2019; originally announced September 2019.

Microwave-Assisted Tunneling in Hard-Wall InAs/InP Nanowire Quantum Dots

Authors: Samuele Cornia, Francesco Rossella, Valeria Demontis, Valentina Zannier, Fabio Beltram, Lucia Sorba, Marco Affronte, Alberto Ghirri

Abstract: With downscaling of electronic circuits, components based on semiconductor quantum dots are assuming increasing relevance for future technologies. Their response under external stimuli intrinsically depend on their quantum properties. Here we investigate single-electron tunneling in hard-wall InAs/InP nanowires in the presence of an off-resonant microwave drive. Our heterostructured nanowires incl… ▽ More With downscaling of electronic circuits, components based on semiconductor quantum dots are assuming increasing relevance for future technologies. Their response under external stimuli intrinsically depend on their quantum properties. Here we investigate single-electron tunneling in hard-wall InAs/InP nanowires in the presence of an off-resonant microwave drive. Our heterostructured nanowires include InAs quantum dots (QDs) and exhibit different tunnel-current regimes. In particular, for source-drain bias up to few mV Coulomb diamonds spread with increasing contrast as a function of microwave power and present multiple current polarity reversals. This behavior can be modelled in terms of voltage fluctuations induced by the microwave field and presents features that depend on the interplay of the discrete energy levels that contribute to the tunneling process. △ Less

Submitted 20 December, 2019; v1 submitted 29 July, 2019; originally announced July 2019.

Journal ref: Scientific Reports 9, 19523 (2019)

Thermoelectric conversion at 30K in InAs/InP nanowire quantum dots

Authors: Domenic Prete, Paolo Andrea Erdman, Valeria Demontis, Valentina Zannier, Daniele Ercolani, Lucia Sorba, Fabio Beltram, Francesco Rossella, Fabio Taddei, Stefano Roddaro

Abstract: We demonstrate high-temperature thermoelectric conversion in InAs/InP nanowire quantum dots by taking advantage of their strong electronic confinement. The electrical conductance G and the thermopower S are obtained from charge transport measurements and accurately reproduced with a theoretical model accounting for the multi-level structure of the quantum dot. Notably, our analysis does not rely o… ▽ More We demonstrate high-temperature thermoelectric conversion in InAs/InP nanowire quantum dots by taking advantage of their strong electronic confinement. The electrical conductance G and the thermopower S are obtained from charge transport measurements and accurately reproduced with a theoretical model accounting for the multi-level structure of the quantum dot. Notably, our analysis does not rely on the estimate of co-tunnelling contributions since electronic thermal transport is dominated by multi-level heat transport. By taking into account two spin-degenerate energy levels we are able to evaluate the electronic thermal conductance K and investigate the evolution of the electronic figure of merit ZT as a function of the quantum dot configuration and demonstrate ZT ~ 35 at 30 K, corresponding to an electronic effciency at maximum power close to the Curzon- Ahlborn limit. △ Less

Submitted 16 March, 2019; originally announced March 2019.

Comments: 7 pages, 4 figures

Journal ref: Nano Lett. 2019, 19, 5, 3033-3039

Ionic liquid gating of InAs nanowire-based field effect transistors

Authors: Johanna Lieb, Valeria Demontis, Daniele Ercolani, Valentina Zannier, Lucia Sorba, Shimpei Ono, Fabio Beltram, Benjamin Sacépé, Francesco Rossella

Abstract: We report the operation of a field-effect transistor based on a single InAs nanowire gated by an ionic liquid. Liquid gating yields very efficient carrier modulation with a transconductance value thirty time larger than standard back gating with the SiO2 /Si++ substrate. Thanks to this wide modulation we show the controlled evolution from semiconductor to metallic-like behavior in the nanowire. Th… ▽ More We report the operation of a field-effect transistor based on a single InAs nanowire gated by an ionic liquid. Liquid gating yields very efficient carrier modulation with a transconductance value thirty time larger than standard back gating with the SiO2 /Si++ substrate. Thanks to this wide modulation we show the controlled evolution from semiconductor to metallic-like behavior in the nanowire. This work provides the first systematic study of ionic-liquid gating in electronic devices based on individual III-V semiconductor nanowires: we argue this architecture opens the way to a wide range of fundamental and applied studies from the phase-transitions to bioelectronics. △ Less

Submitted 23 October, 2018; v1 submitted 22 October, 2018; originally announced October 2018.

Comments: 11 pages (abstract and bibliography included), 5 Figures

Report number: adfm.201804378R1

Vectorial control of the spin-orbit interaction in suspended InAs nanowires

Authors: Andrea Iorio, Mirko Rocci, Lennart Bours, Matteo Carrega, Valentina Zannier, Lucia Sorba, Stefano Roddaro, Francesco Giazotto, Elia Strambini

Abstract: Semiconductor nanowires featuring strong spin-orbit interactions (SOI), represent a promising platform for a broad range of novel technologies, such as spintronic applications or topological quantum computation. However, experimental studies into the nature and the orientation of the SOI vector in these wires remain limited despite being of upmost importance. Typical devices feature the nanowires… ▽ More Semiconductor nanowires featuring strong spin-orbit interactions (SOI), represent a promising platform for a broad range of novel technologies, such as spintronic applications or topological quantum computation. However, experimental studies into the nature and the orientation of the SOI vector in these wires remain limited despite being of upmost importance. Typical devices feature the nanowires placed on top of a substrate which modifies the SOI vector and spoils the intrinsic symmetries of the system. In this work, we report experimental results on suspended InAs nanowires, in which the wire symmetries are fully preserved and clearly visible in transport measurements. Using a vectorial magnet, the non-trivial evolution of weak anti-localization (WAL) is tracked through all 3D space, and both the spin-orbit length $l_{SO}$ and coherence length $l_\varphi$ are determined as a function of the magnetic field magnitude and direction. Studying the angular maps of the WAL signal, we demonstrate that the average SOI within the nanowire is isotropic and that our findings are consistent with a semiclassical quasi-1D model of WAL adapted to include the geometrical constraints of the nanostructure. Moreover, by acting on properly designed side gates, we apply an external electric field introducing an additional vectorial Rashba spin-orbit component whose strength can be controlled by external means. These results give important hints on the intrinsic nature of suspended nanowire and can be interesting for in the field of spintronics as well as for the manipulation of Majorana bound states in devices based on hybrid semiconductors. △ Less

Submitted 15 November, 2018; v1 submitted 11 July, 2018; originally announced July 2018.

Comments: 13 pages, 11 figures

Journal ref: Nano Lett. 2019, 19, 2, 652-657

Supercurrent through a spin-split quasi-ballistic point contact in an InAs nanowire

Authors: J. C. Estrada Saldaña, R. Žitko, J. P. Cleuziou, E. J. H. Lee, V. Zannier, D. Ercolani, L. Sorba, R. Aguado, S. De Franceschi

Abstract: We study the superconducting proximity effect in an InAs nanowire contacted by Ta-based superconducting electrodes. Using local bottom gates, we control the potential landscape along the nanowire, tuning its conductance to a quasi-ballistic regime. At high magnetic field ($B$), we observe approximately quantized conductance plateaus associated with the first two spin-polarized one-dimensional mode… ▽ More We study the superconducting proximity effect in an InAs nanowire contacted by Ta-based superconducting electrodes. Using local bottom gates, we control the potential landscape along the nanowire, tuning its conductance to a quasi-ballistic regime. At high magnetic field ($B$), we observe approximately quantized conductance plateaus associated with the first two spin-polarized one-dimensional modes. For $B < 1$ T, the onset of superconductivity occurs in concomitance with the development of sizeable charge localization leading to a 0.7-type conductance anomaly. In this regime, the proximity supercurrent exhibits an unusual, non-monotonic $B$ dependence. We interpret this finding in terms of a competition between the Kondo effect, dominating near $B=0$, and the Zeeman effect, enforcing spin polarization and the emergence of a $π$ phase shift in the Josephson relation at higher $B$. △ Less

Submitted 5 January, 2018; originally announced January 2018.

Heterogeneous nucleation of catalyst-free InAs nanowires on silicon

Authors: U. P. Gomes, D. Ercolani, V. Zannier, S. Battiato, E. Ubyivovk, V. Mikhailovskii, Y. Murata, S. Heun, F. Beltram, L. Sorba

Abstract: We report on the heterogeneous nucleation of catalyst-free InAs nanowires on Si (111) substrates by chemical beam epitaxy. We show that nanowire nucleation is enhanced by sputtering the silicon substrate with energetic particles. We argue that particle bombardment introduces lattice defects on the silicon surface that serve as preferential nucleation sites. The formation of these nucleation sites… ▽ More We report on the heterogeneous nucleation of catalyst-free InAs nanowires on Si (111) substrates by chemical beam epitaxy. We show that nanowire nucleation is enhanced by sputtering the silicon substrate with energetic particles. We argue that particle bombardment introduces lattice defects on the silicon surface that serve as preferential nucleation sites. The formation of these nucleation sites can be controlled by the sputtering parameters, allowing the control of nanowire density in a wide range. Nanowire nucleation is accompanied by unwanted parasitic islands, but by careful choice of annealing and growth temperature allows to strongly reduce the relative density of these islands and to realize samples with high nanowire yield. △ Less

Submitted 18 January, 2017; originally announced January 2017.

Journal ref: Nanotechnology 28 (2017) 065603

InAs nanowire superconducting tunnel junctions: spectroscopy, thermometry and nanorefrigeration

Authors: Jaakko Mastomäki, Stefano Roddaro, Mirko Rocci, Valentina Zannier, Daniele Ercolani, Lucia Sorba, Ilari J. Maasilta, Nadia Ligato, Antonio Fornieri, Elia Strambini, Francesco Giazotto

Abstract: We demonstrate an original method -- based on controlled oxidation -- to create high-quality tunnel junctions between superconducting Al reservoirs and InAs semiconductor nanowires. We show clean tunnel characteristics with a current suppression by over $4$ orders of magnitude for a junction bias well below the Al gap $Δ_0 \approx 200\,μ{\rm eV}$. The experimental data are in close agreement with… ▽ More We demonstrate an original method -- based on controlled oxidation -- to create high-quality tunnel junctions between superconducting Al reservoirs and InAs semiconductor nanowires. We show clean tunnel characteristics with a current suppression by over $4$ orders of magnitude for a junction bias well below the Al gap $Δ_0 \approx 200\,μ{\rm eV}$. The experimental data are in close agreement with the BCS theoretical expectations of a superconducting tunnel junction. The studied devices combine small-scale tunnel contacts working as thermometers as well as larger electrodes that provide a proof-of-principle active {\em cooling} of the electron distribution in the nanowire. A peak refrigeration of about $δT = 10\,{\rm mK}$ is achieved at a bath temperature $T_{bath}\approx250-350\,{\rm mK}$ in our prototype devices. This method opens important perspectives for the investigation of thermoelectric effects in semiconductor nanostructures and for nanoscale refrigeration. △ Less

Submitted 8 November, 2016; originally announced November 2016.

Comments: 6 pages, 4 color figures

Journal ref: Nano Research (2017)