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Superconducting Penetration Depth Through a Van Hove Singularity: Sr$_2$RuO$_4$ Under Uniaxial Stress
Authors:
Eli Mueller,
Yusuke Iguchi,
Fabian Jerzembeck,
Jorge O. Rodriguez,
Marisa Romanelli,
Edgar Abarca-Morales,
Anastasios Markou,
Naoki Kikugawa,
Dmitry A. Sokolov,
Gwansuk Oh,
Clifford W. Hicks,
Andrew P. Mackenzie,
Yoshiteru Maeno,
Vidya Madhavan,
Kathryn A. Moler
Abstract:
In the unconventional superconductor Sr$_2$RuO$_4$, uniaxial stress along the $[100]$ direction tunes the Fermi level through a Van Hove singularity (VHS) in the density of states, causing a strong enhancement of the superconducting critical temperature $T_\textrm{c}$. Here, we report measurements of the London penetration depth $λ$ as this tuning is performed. We find that the zero-temperature su…
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In the unconventional superconductor Sr$_2$RuO$_4$, uniaxial stress along the $[100]$ direction tunes the Fermi level through a Van Hove singularity (VHS) in the density of states, causing a strong enhancement of the superconducting critical temperature $T_\textrm{c}$. Here, we report measurements of the London penetration depth $λ$ as this tuning is performed. We find that the zero-temperature superfluid density, here defined as $λ(0)^{-2}$, increases by $\sim$15%, with a peak that coincides with the peak in $T_\textrm{c}$. We also find that the low temperature form of $λ(T)$ is quadratic over the entire strain range. Using scanning tunneling microscopy, we find that the gap increases from $Δ_0 \approx 350~μ$eV in unstressed Sr$_2$RuO$_4$ to $Δ_0 \approx 600~μ$eV in a sample strained to near the peak in $T_c$. With a nodal order parameter, an increase in the superconducting gap could bring about an increase in the superfluid density through reduced sensitivity to defects and through reduced non-local effects in the Meissner screening. Our data indicate that tuning to the VHS increases the gap throughout the Brillouin zone, and that non-local effects are likely more important than reduced scattering.
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Submitted 11 December, 2023; v1 submitted 8 December, 2023;
originally announced December 2023.
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Giant spin-charge conversion in ultrathin films of the MnPtSb half-Heusler compound
Authors:
E. Longo,
A. Markou,
C. Felser,
M. Belli,
A. Serafini,
P. Targa,
D. Codegoni,
M. Fanciulli,
R. Mantovan
Abstract:
Half-metallic half-Heusler compounds with strong spin-orbit-coupling and broken inversion symmetry in their crystal structure are promising materials for generating and absorbing spin-currents, thus enabling the electric manipulation of magnetization in energy-efficient spintronic devices. In this work, we report the spin-to-charge conversion in sputtered ultrathin films of the half-Heusler compou…
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Half-metallic half-Heusler compounds with strong spin-orbit-coupling and broken inversion symmetry in their crystal structure are promising materials for generating and absorbing spin-currents, thus enabling the electric manipulation of magnetization in energy-efficient spintronic devices. In this work, we report the spin-to-charge conversion in sputtered ultrathin films of the half-Heusler compound MnPtSb with thickness (t) in the range from 1 to 6 nm. A combination of X-ray and transmission electron microscopy measurements evidence the epitaxial nature of these ultrathin non-centrosymmetric MnPtSb films, with a clear (111)-orientation obtained on top of (0001) single-crystal sapphire substrates. The study of the thickness (t)-dependent magnetization dynamics of the MnPtSb(t)/Co(5nm)/Au(5nm) heterostructure revealed that the MnPtSb compound can be used as an efficient spin current generator, even at film thicknesses as low as 1 nm. By making use of spin pumping FMR, we measure a remarkable t-dependent spin-charge conversion in the MnPtSb layers, which clearly demonstrate the interfacial origin of the conversion. When interpreted as arising from the inverse Edelstein effect (IEE), the spin-charge conversion efficiency extracted at room temperature for the thinnest MnPtSb layer reaches λIEE~3 nm, representing an extremely high spin-charge conversion efficiency at room temperature. The still never explored ultrathin regime of the MnPtSb films studied in this work and the discover of their outstanding functionality are two ingredients which demonstrate the potentiality of such materials for future applications in spintronics.
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Submitted 26 July, 2023;
originally announced July 2023.
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Optically controlling the competition between spin flips and intersite spin transfer in a Heusler half-metal on sub-100 fs timescales
Authors:
Sinéad A. Ryan,
Peter C. Johnsen,
Mohamed F. Elhanoty,
Anya Grafov,
Na Li,
Anna Delin,
Anastasios Markou,
Edouard Lesne,
Claudia Felser,
Olle Eriksson,
Henry C. Kapteyn,
Oscar Grånäs,
Margaret M. Murnane
Abstract:
The direct manipulation of spins via light may provide a path toward ultrafast energy-efficient devices. However, distinguishing the microscopic processes that can occur during ultrafast laser excitation in magnetic alloys is challenging. Here, we study the Heusler compound Co2MnGa, a material that exhibits very strong light-induced spin transfers across the entire M-edge. By combining the element…
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The direct manipulation of spins via light may provide a path toward ultrafast energy-efficient devices. However, distinguishing the microscopic processes that can occur during ultrafast laser excitation in magnetic alloys is challenging. Here, we study the Heusler compound Co2MnGa, a material that exhibits very strong light-induced spin transfers across the entire M-edge. By combining the element-specificity of extreme ultraviolet high harmonic probes with time-dependent density functional theory, we disentangle the competition between three ultrafast light-induced processes that occur in Co2MnGa: same-site Co-Co spin transfer, intersite Co-Mn spin transfer, and ultrafast spin-flips mediated by spin-orbit coupling. By measuring the dynamic magnetic asymmetry across the entire M-edges of the two magnetic sublattices involved, we uncover the relative dominance of these processes at different probe energy regions and times during the laser pulse. Our combined approach enables a comprehensive microscopic interpretation of laser-induced magnetization dynamics on timescales shorter than 100 fs.
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Submitted 10 November, 2023; v1 submitted 25 May, 2023;
originally announced May 2023.
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Helicity-dependent Ultrafast Photocurrents in Weyl Magnet Mn$_3$Sn
Authors:
Dominik Hamara,
Gunnar F. Lange,
Farhan Nur Kholid,
Anastasios Markou,
Claudia Felser,
Robert-Jan Slager,
Chiara Ciccarelli
Abstract:
We present an optical pump-THz emission study on non-collinear antiferromagnet Mn$_3$Sn. We show that Mn$_3$Sn acts as a source of THz radiation when irradiated by femtosecond laser pulses. The polarity and amplitude of the emitted THz fields can be fully controlled by the polarisation of optical excitation. We explain the THz emission with the photocurrents generated via the photon drag effect by…
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We present an optical pump-THz emission study on non-collinear antiferromagnet Mn$_3$Sn. We show that Mn$_3$Sn acts as a source of THz radiation when irradiated by femtosecond laser pulses. The polarity and amplitude of the emitted THz fields can be fully controlled by the polarisation of optical excitation. We explain the THz emission with the photocurrents generated via the photon drag effect by combining various experimental measurements as a function of pump polarisation, magnetic field, and sample orientation with thorough symmetry analysis of response tensors.
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Submitted 14 February, 2023;
originally announced February 2023.
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Molecular Beam Epitaxy of a Half-Heusler Topological Superconductor Candidate YPtBi
Authors:
Jiwoong Kim,
Kajetan M. Fijalkowski,
Johannes Kleinlein,
Claus Schumacher,
Anastasios Markou,
Charles Gould,
Steffen Schreyeck,
Claudia Felser,
Laurens W. Molenkamp
Abstract:
The search for topological superconductivity has motivated investigations into materials that combine topological and superconducting properties. The half-Heusler compound YPtBi appears to be such a material, however experiments have thus far been limited to bulk single crystals, drastically limiting the scope of available experiments. This has made it impossible to investigate the potential topol…
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The search for topological superconductivity has motivated investigations into materials that combine topological and superconducting properties. The half-Heusler compound YPtBi appears to be such a material, however experiments have thus far been limited to bulk single crystals, drastically limiting the scope of available experiments. This has made it impossible to investigate the potential topological nature of the superconductivity in this material. Experiments to access details about the superconducting state require sophisticated lithographic structures, typically based on thin films. Here we report on the establishment of high crystalline quality epitaxial thin films of YPtBi(111), grown using molecular beam epitaxy on Al2O3(0001) substrates. A robust superconducting state is observed, with both critical temperature and critical field consistent with that previously reported for bulk crystals. Moreover we find that AlOx capping sufficiently protects the sample surface from degradation to allow for proper lithography. Our results pave a path towards the development of advanced lithographic structures, that will allow the exploration of the potentially topological nature of superconductivity in YPtBi.
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Submitted 23 November, 2022;
originally announced November 2022.
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Spintronic THz emitters based on transition metals and semi-metals/Pt multilayers
Authors:
J. Hawecker,
E. Rongione,
A. Markou,
S. Krishnia,
F. Godel,
S. Collin,
R. Lebrun,
J. Tignon,
J. Mangeney,
T. Boulier,
J. -M. George,
C. Felser,
H. Jaffrès,
S. Dhillon
Abstract:
Spintronic terahertz (THz) emitters (STE) based on the inverse spin Hall effect in ferromagnetic/heavy metal (FM/HM) heterostructures have become important sources for THz pulse generation. The design, materials and control of these interfaces at the nanometer level has become vital to engineer their THz emission properties.In this work, we present studies of the optimization of such structures th…
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Spintronic terahertz (THz) emitters (STE) based on the inverse spin Hall effect in ferromagnetic/heavy metal (FM/HM) heterostructures have become important sources for THz pulse generation. The design, materials and control of these interfaces at the nanometer level has become vital to engineer their THz emission properties.In this work, we present studies of the optimization of such structures through a multi-pronged approach, taking advantage of material and interface engineering to enhance the THz spintronic emission. This includes: the application of multi-stacks of HM/FM junctions and their application to trilayer structures, the use of spin-sinks to simultaneously enhance the THz emitted fields and reduce the use of thick Pt layers to reduce optical absorption, and the use of semi-metals to increase the spin polarization and thus the THz emission. Through these approaches, significant enhancements of the THz field can be achieved. Importantly, taking into account the optical absorption permits to elucidate novel phenomena such as the relation between the spin diffusion length and the spin-sink using THz spectroscopy, as well as possibly distinguishing between self and interface spin-to-charge conversion in semi-metals.
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Submitted 16 March, 2022;
originally announced March 2022.
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Giant intrinsic anomalous terahertz Faraday rotation in the magnetic Weyl semimetal Co$_2$MnGa at room temperature
Authors:
Xingyue Han,
Anastasios Markou,
Jonathan Stensberg,
Yan Sun,
Claudia Felser,
Liang Wu
Abstract:
We report measurement of terahertz anomalous Hall conductivity and Faraday rotation in the magnetic Weyl semimetal Co$_2$MnGa thin films as a function of the magnetic field, temperature and thickness, using time-domain terahertz spectroscopy. The terahertz conductivity shows a thickness-independent anomalous Hall conductivity of around 600 $Ω^{-1}\cdot cm^{-1}$ at room temperature, and it is also…
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We report measurement of terahertz anomalous Hall conductivity and Faraday rotation in the magnetic Weyl semimetal Co$_2$MnGa thin films as a function of the magnetic field, temperature and thickness, using time-domain terahertz spectroscopy. The terahertz conductivity shows a thickness-independent anomalous Hall conductivity of around 600 $Ω^{-1}\cdot cm^{-1}$ at room temperature, and it is also frequency-independent from 0.2-1.5 THz. The magnitude of the longitudinal and Hall conductivities, the weak spin-orbit coupling, and the very close positioning of Weyl points to the chemical potential all satisfy the criteria for intrinsic anomalous Hall conductivity. First-principle calculation also supports the frequency-independent intrinsic anomalous Hall conductivity at low frequency. We also find a thickness-independent Faraday rotation of 59 ($\pm6$) mrad at room temperature, which comes from the intrinsic Berry curvature contribution. In the thinnest 20 nm sample, the Faraday rotation divided by the sample thickness reaches around 3 mrad/nm due to Berry curvature, and is the largest reported at room temperature. The giant Verdet constant of the order of 10 $^{6}$ rad m $^{-1}$ T $^{-1}$ at room temperature and the large Hall angle around 8.5 $\%$ from 0.2-1.5 THz indicates that Co$_2$MnGa is promising for THz spintronics at room temperature.
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Submitted 27 April, 2022; v1 submitted 13 December, 2021;
originally announced December 2021.
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Spin-voltage-driven efficient terahertz spin currents from the magnetic Weyl semimetals Co$_2$MnGa and Co$_2$MnAl
Authors:
Genaro Bierhance,
Anastasios Markou,
Oliver Gueckstock,
Reza Rouzegar,
Yannic Behovits,
Alexander Chekhov,
Martin Wolf,
Tom S. Seifert,
Claudia Felser,
Tobias Kampfrath
Abstract:
Magnetic Weyl semimetals are an emerging material class that combines magnetic order and a topologically non-trivial band structure. Here, we study ultrafast optically driven spin injection from thin films of the magnetic Weyl semimetals Co$_2$MnGa and Co$_2$MnAl into an adjacent Pt layer by means of terahertz emission spectroscopy. We find that (i) Co$_2$MnGa and Co$_2$MnAl are efficient terahert…
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Magnetic Weyl semimetals are an emerging material class that combines magnetic order and a topologically non-trivial band structure. Here, we study ultrafast optically driven spin injection from thin films of the magnetic Weyl semimetals Co$_2$MnGa and Co$_2$MnAl into an adjacent Pt layer by means of terahertz emission spectroscopy. We find that (i) Co$_2$MnGa and Co$_2$MnAl are efficient terahertz spin-current generators reaching efficiencies of typical 3d-transition-metal ferromagnets such as Fe. (ii) The relaxation of the spin current provides an estimate of the electron-spin relaxation time of Co$_2$MnGa (165 fs) and Co$_2$MnAl (102 fs), which is comparable to Fe (92 fs). Both observations are consistent with a simple analytical model and highlight the large potential of magnetic Weyl semimetals as spin-current sources in terahertz spintronic devices. Finally, our results provide a strategy to identify magnetic materials that provide maximum spin current amplitudes for a given deposited optical energy density.
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Submitted 30 November, 2021;
originally announced November 2021.
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Anisotropic magneto-thermal transport in Co$_2$MnGa thin films
Authors:
Philipp Ritzinger,
Helena Reichlova,
Dominik Kriegner,
Anastasios Markou,
Richard Schlitz,
Michaela Lammel,
Gyu Hyeon Park,
Andy Thomas,
Pavel Streda,
Claudia Felser,
Sebastian T. B. Goennenwein,
Karel Vyborny
Abstract:
Ferromagnetic Co$_2$MnGa has recently attracted significant attention due to effects related to non-trivial topology of its band structure, however a systematic study of canonical magneto-galvanic transport effects is missing. Focusing on high quality thin films, here we systematically measure anisotropic magnetoresistance (AMR) and its thermoelectric counterpart (AMTP). We model the AMR data by f…
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Ferromagnetic Co$_2$MnGa has recently attracted significant attention due to effects related to non-trivial topology of its band structure, however a systematic study of canonical magneto-galvanic transport effects is missing. Focusing on high quality thin films, here we systematically measure anisotropic magnetoresistance (AMR) and its thermoelectric counterpart (AMTP). We model the AMR data by free energy minimisation within the Stoner-Wohlfarth formalism and conclude that both crystalline and non-crystalline components of this magneto-transport phenomenon are present in Co$_2$MnGa. Unlike the AMR which is small in relative terms, the AMTP is large due to a change of sign of the Seebeck coefficient as a function of temperature. This fact is discussed in the context of the Mott rule and further analysis of AMTP components is presented.
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Submitted 28 December, 2020;
originally announced December 2020.
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Hard Magnetic Topological Semimetals in XPt3: Harmony of Berry Curvature
Authors:
Anastasios Markou,
Jacob Gayles,
Elena Derunova,
Peter Swekis,
Jonathan Noky,
Liguo Zhang,
Mazhar N. Ali,
Yan Sun,
Claudia Felser
Abstract:
Topological magnetic semimetals, like Co3Sn2S2 and Co2MnGa, are known to display exotic transport properties, such as large intrinsic anomalous (AHE) due to uncompensated Berry curvature. The highly symmetric XPt3 compounds display anti-crossing gapped nodal lines, which are a driving mechanism in the intrinsic Berry curvature Hall effects. Uniquely, these compounds contain two sets of gapped noda…
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Topological magnetic semimetals, like Co3Sn2S2 and Co2MnGa, are known to display exotic transport properties, such as large intrinsic anomalous (AHE) due to uncompensated Berry curvature. The highly symmetric XPt3 compounds display anti-crossing gapped nodal lines, which are a driving mechanism in the intrinsic Berry curvature Hall effects. Uniquely, these compounds contain two sets of gapped nodal lines that harmoniously dominate the Berry curvature in this complex multiband system. We calculate a maximum AHE of 1965 S/cm in the CrPt3 by a state-of-the-art first principle electronic structure. We have grown high-quality thin films by magnetron sputtering and measured a robust AHE of 1750 S/cm for different sputtering growth conditions. Additionally, the cubic films display a hard magnetic axis along [111] direction. The facile and scalable fabrication of these materials is prime candidates for integration into topological devices.
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Submitted 27 August, 2020;
originally announced August 2020.
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Role of magnetic exchange interactions in chiral-type Hall effects of epitaxial Mn$_{x}$PtSn films
Authors:
Peter Swekis,
Jacob Gayles,
Dominik Kriegner,
Gerhard H. Fecher,
Yan Sun,
Sebastian T. B. Goennenwein,
Claudia Felser,
Anastasios Markou
Abstract:
Tetragonal Mn-based Heusler compounds feature rich exchange interactions and exotic topological magnetic textures, such as antiskyrmions, complimented by the chiral-type Hall effects. This makes the material class interesting for device applications. We report the relation of the magnetic exchange interactions to the thickness and Mn concentration of Mn$_{x}$PtSn films, grown by magnetron sputteri…
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Tetragonal Mn-based Heusler compounds feature rich exchange interactions and exotic topological magnetic textures, such as antiskyrmions, complimented by the chiral-type Hall effects. This makes the material class interesting for device applications. We report the relation of the magnetic exchange interactions to the thickness and Mn concentration of Mn$_{x}$PtSn films, grown by magnetron sputtering. The competition of the magnetic exchange interactions determines the finite temperature magnetic texture and thereby the chiral-type Hall effects in external magnetic fields. We investigate the magnetic and transport properties as a function of magnetic field and temperature. We focus on the anomalous and chiral-type Hall effects and the behavior of the dc-magnetization, in relation to chiral spin textures. We further determine the stable crystal phase for a relative Mn concentration between 1.5 and 1.85 in the $I\overline{4}2d$ structure. We observe a spin-reorientation transition in all compounds studied, which is due to the competition of exchange interactions on different Mn sublattices. We discuss our results in terms of exchange interactions and compare them with theoretical atomistic spin calculations.
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Submitted 27 July, 2020;
originally announced July 2020.
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A hierarchical distributed predictive control approach for microgrids energy management
Authors:
Le Anh Dao,
Alireza Dehghani-Pilehvarani,
Achilleas Markou,
Luca Ferrarini
Abstract:
This paper addresses the problem of management and coordination of energy resources in a typical microgrid, including smart buildings as flexible loads, energy storages, and renewables. The overall goal is to provide a comprehensive and innovative framework to maximize the overall benefit, still accounting for possible requests to change the load profile coming from the grid and leaving every sing…
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This paper addresses the problem of management and coordination of energy resources in a typical microgrid, including smart buildings as flexible loads, energy storages, and renewables. The overall goal is to provide a comprehensive and innovative framework to maximize the overall benefit, still accounting for possible requests to change the load profile coming from the grid and leaving every single building or user to balance between servicing those requests and satisfying his own comfort levels. The user involvement in the decision-making process is granted by a management and control solution exploiting an innovative distributed model predictive control approach with coordination. In addition, also a hierarchical structure is proposed, to integrate the distributed MPC user-side with the microgrid control, also implemented with an MPC technique. The proposed overall approach has been implemented and tested in several experiments in the laboratory facility for distributed energy systems (Smart RUE) at NTUA, Athens, Greece. Simulation analysis and results complement the testing, showing the accuracy and the potential of the method, also from the perspective of implementation.
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Submitted 1 June, 2020;
originally announced June 2020.
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Origin of the quasi-quantized Hall effect in ZrTe5
Authors:
Stanislaw Galeski,
Toni Ehmcke,
Rafal Wawrzynczak,
Pedro Mercado Lozano,
Kyungjune Cho,
Ankit Sharma,
Souvik Das,
Felix Kuster,
Paolo Sessi,
Manuel Brando,
Robert Kuchler,
Anastasios Markou,
Markus Konig,
Claudia Felser,
Yasmine Sassa,
Qiang Li,
Genda Gu,
Peter Swekis,
Martin Zimmermann,
Oleh Ivashko,
Dennis I. Gorbunov,
Sergei Zherlitsyn,
Tobias Forster,
Stuart Parkin,
Joachim Wosnitza
, et al. (2 additional authors not shown)
Abstract:
The quantum Hall effect (QHE) is traditionally considered a purely two-dimensional (2D) phenomenon. Recently, a three-dimensional (3D) version of the QHE has been reported in the Dirac semimetal ZrTe5. It was proposed to arise from a magnetic-field-driven Fermi surface instability, transforming the original 3D electron system into a stack of 2D sheets. Here, we report thermodynamic, thermoelectric…
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The quantum Hall effect (QHE) is traditionally considered a purely two-dimensional (2D) phenomenon. Recently, a three-dimensional (3D) version of the QHE has been reported in the Dirac semimetal ZrTe5. It was proposed to arise from a magnetic-field-driven Fermi surface instability, transforming the original 3D electron system into a stack of 2D sheets. Here, we report thermodynamic, thermoelectric and charge transport measurements on ZrTe5 in the quantum Hall regime. The measured thermodynamic properties: magnetization and ultrasound propagation, show no signatures of a Fermi surface instability, consistent with in-field single crystal X-ray diffraction. Instead, a direct comparison of the experimental data with linear response calculations based on an effective 3D Dirac Hamiltonian suggests that the quasi-quantization of the observed Hall response is an intrinsic property of the 3D electronic structure. Our findings render the Hall effect in ZrTe5 a truly 3D counterpart of the QHE in 2D systems.
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Submitted 22 February, 2021; v1 submitted 26 May, 2020;
originally announced May 2020.
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Unconventional Hall response in the quantum limit of HfTe5
Authors:
S. Galeski,
X. Zhao,
R. Wawrzyńczak,
T. Meng,
T. Förster,
P. M. Lozano,
S. Honnali,
N. Lamba,
T. Ehmcke,
A. Markou,
Q. Li,
G. Gu,
W. Zhu,
J. Wosnitza,
C. Felser,
G. F. Chen,
J. Gooth
Abstract:
Interacting electrons confined to their lowest Landau level in a high magnetic field can form a variety of correlated states, some of which manifest themselves in a Hall effect. Although such states have been predicted to occur in three dimensional semimetals, a corresponding Hall response has not yet been experimentally observed. Here, we report the observation of an unconventional Hall response…
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Interacting electrons confined to their lowest Landau level in a high magnetic field can form a variety of correlated states, some of which manifest themselves in a Hall effect. Although such states have been predicted to occur in three dimensional semimetals, a corresponding Hall response has not yet been experimentally observed. Here, we report the observation of an unconventional Hall response in the quantum limit of the bulk semimetal HfTe5, adjacent to the three-dimensional quantum Hall effect of a single electron band at low magnetic fields. The additional plateau-like feature in the Hall conductivity of the lowest Landau level is accompanied by a Shubnikov-de Haas minimum in the longitudinal electrical resistivity and its magnitude relates as 3/5 to the height of the last plateau of the three-dimensional quantum Hall effect. Our findings are consistent with strong electron-electron interactions, stabilizing an unconventional variant of the Hall effect in a three-dimensional material in the quantum limit.
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Submitted 19 October, 2020; v1 submitted 16 March, 2020;
originally announced March 2020.
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Anomalous and topological Hall effects in epitaxial thin films of the noncollinear antiferromagnet Mn$_{3}$Sn
Authors:
James M. Taylor,
Anastasios Markou,
Edouard Lesne,
Pranava Keerthi Sivakumar,
Chen Luo,
Florin Radu,
Peter Werner,
Claudia Felser,
Stuart S. P. Parkin
Abstract:
Noncollinear antiferromagnets with a D0$_{19}$ (space group = 194, P6$_{3}$/mmc) hexagonal structure have garnered much attention for their potential applications in topological spintronics. Here, we report the deposition of continuous epitaxial thin films of such a material, Mn$_{3}$Sn, and characterize their crystal structure using a combination of x-ray diffraction and transmission electron mic…
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Noncollinear antiferromagnets with a D0$_{19}$ (space group = 194, P6$_{3}$/mmc) hexagonal structure have garnered much attention for their potential applications in topological spintronics. Here, we report the deposition of continuous epitaxial thin films of such a material, Mn$_{3}$Sn, and characterize their crystal structure using a combination of x-ray diffraction and transmission electron microscopy. Growth of Mn$_{3}$Sn films with both (0001) c-axis orientation and (40$\bar{4}$3) texture is achieved. In the latter case, the thin films exhibit a small uncompensated Mn moment in the basal plane, quantified via magnetometry and x-ray magnetic circular dichroism experiments. This cannot account for the large anomalous Hall effect simultaneously observed in these films, even at room temperature, with magnitude $σ_{\mathrm{xy}}$ ($μ_{0}H$ = 0 T) = 21 $\mathrmΩ^{-1}\mathrm{cm}^{-1}$ and coercive field $μ_{0}H_{\mathrm{C}}$ = 1.3 T. We attribute the origin of this anomalous Hall effect to momentum-space Berry curvature arising from the symmetry-breaking inverse triangular spin structure of Mn$_{3}$Sn. Upon cooling through the transition to a glassy ferromagnetic state at around 50 K, a peak in the Hall resistivity close to the coercive field indicates the onset of a topological Hall effect contribution, due to the emergence of a scalar spin chirality generating a real-space Berry phase. We demonstrate that the polarity of this topological Hall effect, and hence the chiral-nature of the noncoplanar magnetic structure driving it, can be controlled using different field cooling conditions.
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Submitted 12 December, 2019; v1 submitted 9 October, 2019;
originally announced October 2019.
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Thickness dependence of the anomalous Nernst effect and the Mott relation of Weyl-semimetal Co2MnGa thin films
Authors:
Gyu-Hyeon Park,
Helena Reichlova,
Richard Schlitz,
Michaela Lammel,
Anastasios Markou,
Peter Swekis,
Philipp Ritzinger,
Dominik Kriegner,
Jonathan Noky,
Jacob Gayles,
Yan Sun,
Claudia Felser,
Kornelius Nielsch,
Sebastian T. B. Goennenwein,
Andy Thomas
Abstract:
We report a robust anomalous Nernst effect in Co2MnGa thin films in the thickness regime between 20 and 50 nm. The anomalous Nernst coefficient varied in the range of -2.0 to -3.0 uV/K at 300 K. We demonstrate that the anomalous Hall and Nernst coefficients exhibit similar behavior and fulfill the Mott relation. We simultaneously measure all four transport coefficients of the longitudinal resistiv…
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We report a robust anomalous Nernst effect in Co2MnGa thin films in the thickness regime between 20 and 50 nm. The anomalous Nernst coefficient varied in the range of -2.0 to -3.0 uV/K at 300 K. We demonstrate that the anomalous Hall and Nernst coefficients exhibit similar behavior and fulfill the Mott relation. We simultaneously measure all four transport coefficients of the longitudinal resistivity, transversal resistivity, Seebeck coefficient, and anomalous Nernst coefficient. We connect the values of the measured and calculated Nernst conductivity by using the remaining three magneto-thermal transport coefficients, where the Mott relation is still valid. The intrinsic Berry curvature dominates the transport due to the relation between the longitudinal and transversal transport. Therefore, we conclude that the Mott relationship is applicable to describe the magneto-thermoelectric transport in Weyl semimetal Co2MnGa as a function of film thickness.
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Submitted 7 April, 2020; v1 submitted 23 September, 2019;
originally announced September 2019.
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Imaging and writing magnetic domains in the non-collinear antiferromagnet Mn$_{\text{3}}$Sn
Authors:
Helena Reichlova,
Tomas Janda,
Joao Godinho,
Anastasios Markou,
Dominik Kriegner,
Richard Schlitz,
Jakub Zelezny,
Zbynek Soban,
Mauricio Bejarano,
Helmut Schultheiss,
Petr Nemec,
Tomas Jungwirth,
Claudia Felser,
Joerg Wunderlich,
Sebastian T. B. Goennenwein
Abstract:
Harnessing the unique properties of non-collinear antiferromagnets (AFMs) will be essential for exploiting the full potential of antiferromagnetic spintronics. Indeed, many of the effects enabling ferromagnetic spintronic devices have a corresponding counterpart in materials with non-collinear spin structure. In addition, new phenomena such as the magnetic spin Hall effect were experimentally obse…
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Harnessing the unique properties of non-collinear antiferromagnets (AFMs) will be essential for exploiting the full potential of antiferromagnetic spintronics. Indeed, many of the effects enabling ferromagnetic spintronic devices have a corresponding counterpart in materials with non-collinear spin structure. In addition, new phenomena such as the magnetic spin Hall effect were experimentally observed in non-collinear AFMs, and the presence of the equivalent to the ferromagnetic spin transfer torque via spin polarized currents was theoretically predicted. In spite of these developments, an interpretation of the rich physical phenomena observed in non-collinear antiferromagnets is challenging, since the microscopic spin arrangement, the magnetic domain distribution, and the domain orientations have proven notoriously difficult to access experimentally. This is all the more problematic, as imaging and writing magnetic domains is of central importance for applications. Successful imaging is a basic requirement to experimentally confirm the spin transfer torque acting on non-collinear domain walls and therefore of eminent interest. Here, we demonstrate that the local magnetic structure of the non-collinear AFM Mn3Sn films can be imaged by scanning thermal gradient microscopy (STGM). The technique is based on scanning a laser spot over the sample's surface, and recording the ensuing thermo-voltage. We image the magnetic structure at a series of different temperatures and show that at room temperature, the domain structure is not affected by the application of moderate magnetic fields. In addition to imaging, we establish a scheme for heat-assisted magnetic recording, using local laser heating in combination with magnetic fields to intentionally write domain patterns into the antiferromagnet.
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Submitted 31 May, 2019;
originally announced May 2019.
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Thickness dependence of the anomalous Hall effect in thin films of the topological semimetal Co$_2$MnGa
Authors:
Anastasios Markou,
Dominik Kriegner,
Jacob Gayles,
Liguo Zhang,
Yi-Cheng Chen,
Benedikt Ernst,
Yu-Hong Lai,
Walter Schnelle,
Ying-Hao Chu,
Yan Sun,
Claudia Felser
Abstract:
Topological magnetic semimetals promise large Berry curvature through the distribution of the topological Weyl nodes or nodal lines and further novel physics with exotic transport phenomena. We present a systematic study of the structural and magnetotransport properties of Co$_2$MnGa films from thin (20 nm) to bulk like behavior (80 nm), in order to understand the underlying mechanisms and the rol…
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Topological magnetic semimetals promise large Berry curvature through the distribution of the topological Weyl nodes or nodal lines and further novel physics with exotic transport phenomena. We present a systematic study of the structural and magnetotransport properties of Co$_2$MnGa films from thin (20 nm) to bulk like behavior (80 nm), in order to understand the underlying mechanisms and the role on the topology. The magnetron sputtered Co$_2$MnGa films are $L$$2_{\mathrm {1}}$-ordered showing very good heteroepitaxy and a strain-induced tetragonal distortion. The anomalous Hall conductivity was found to be maximum at a value of 1138 S/cm, with a corresponding anomalous Hall angle of 13 %, which is comparatively larger than topologically trivial metals. There is a good agreement between the theoretical calculations and the Hall conductivity observed for the 80 nm film, which suggest that the effect is intrinsic. Thus, the Co$_2$MnGa compound manifests as a promising material towards topologically-driven spintronic applications.
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Submitted 7 August, 2019; v1 submitted 25 April, 2019;
originally announced April 2019.
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Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the non-collinear antiferromagnet Mn$_{3}$Ir
Authors:
James M. Taylor,
Edouard Lesne,
Anastasios Markou,
Fasil Kidane Dejene,
Pranava Keerthi Sivakumar,
Simon Pöllath,
Kumari Gaurav Rana,
Neeraj Kumar,
Chen Luo,
Hanjo Ryll,
Florin Radu,
Florian Kronast,
Peter Werner,
Christian H. Back,
Claudia Felser,
Stuart S. P. Parkin
Abstract:
Non-collinear antiferromagnets, with either an L1$_{2}$ cubic crystal lattice (e.g. Mn$_{3}$Ir and Mn$_{3}$Pt) or a D0$_{19}$ hexagonal structure (e.g. Mn$_{3}$Sn and Mn$_{3}$Ge), exhibit a number of novel phenomena of interest to topological spintronics. Amongst the cubic systems, for example, tetragonally distorted Mn$_{3}$Pt exhibits an intrinsic anomalous Hall effect (AHE). However, Mn$_{3}$Pt…
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Non-collinear antiferromagnets, with either an L1$_{2}$ cubic crystal lattice (e.g. Mn$_{3}$Ir and Mn$_{3}$Pt) or a D0$_{19}$ hexagonal structure (e.g. Mn$_{3}$Sn and Mn$_{3}$Ge), exhibit a number of novel phenomena of interest to topological spintronics. Amongst the cubic systems, for example, tetragonally distorted Mn$_{3}$Pt exhibits an intrinsic anomalous Hall effect (AHE). However, Mn$_{3}$Pt only enters a non-collinear magnetic phase close to the stoichiometric composition and at suitably large thicknesses. Therefore, we turn our attention to Mn$_{3}$Ir, the material of choice for use in exchange bias heterostructures. In this paper, we investigate the magnetic and electrical transport properties of epitaxially grown, face-centered-cubic $γ$-Mn$_{3}$Ir thin films with (111) crystal orientation. Relaxed films of 10 nm thickness exhibit an ordinary Hall effect, with a hole-type carrier concentration of (2.24 $\pm$ 0.08) $\times$ 10$^{23}$ cm$^{-3}$. On the other hand, TEM characterization demonstrates that ultrathin 3 nm films grow with significant in-plane tensile strain. This may explain a small remanent moment, observed at low temperatures, shown by XMCD spectroscopy to arise from uncompensated Mn spins. Of the order 0.02 $μ_{B}$ / atom, this dominates electrical transport behavior, leading to a small AHE and negative magnetoresistance. These results are discussed in terms of crystal microstructure and chiral domain behavior, with spatially resolved XML(C)D-PEEM supporting the conclusion that small antiferromagnetic domains, < 20 nm in size, of differing chirality account for the absence of observed Berry curvature driven magnetotransport effects.
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Submitted 9 April, 2019;
originally announced April 2019.
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Epitaxial growth, structural characterization and exchange bias of non-collinear antiferromagnetic Mn$_{3}$Ir thin films
Authors:
James M. Taylor,
Edouard Lesne,
Anastasios Markou,
Fasil Kidane Dejene,
Benedikt Ernst,
Adel Kalache,
Kumari Gaurav Rana,
Neeraj Kumar,
Peter Werner,
Claudia Felser,
Stuart S. P. Parkin
Abstract:
Antiferromagnetic materials are of great interest for spintronics. Here we present a comprehensive study of the growth, structural characterization, and resulting magnetic properties of thin films of the non-collinear antiferromagnet Mn$_{3}$Ir. Using epitaxial engineering on MgO (001) and Al$_{2}$O$_{3}$ (0001) single crystal substrates, we control the growth of cubic $γ$-Mn$_{3}$Ir in both (001)…
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Antiferromagnetic materials are of great interest for spintronics. Here we present a comprehensive study of the growth, structural characterization, and resulting magnetic properties of thin films of the non-collinear antiferromagnet Mn$_{3}$Ir. Using epitaxial engineering on MgO (001) and Al$_{2}$O$_{3}$ (0001) single crystal substrates, we control the growth of cubic $γ$-Mn$_{3}$Ir in both (001) and (111) crystal orientations, and discuss the optimization of growth conditions to achieve high-quality crystal structures with low surface roughness. Exchange bias is studied in bilayers, with exchange bias fields as large as -29 mT (equivalent to a unidirectional anisotropy constant of 11.5 nJ cm$^{-2}$) measured in Mn$_{3}$Ir (111) / permalloy heterostructures at room temperature. In addition, a distinct dependence of blocking temperature on in-plane crystallographic direction in Mn$_{3}$Ir (001) / Py bilayers is observed. These findings are discussed in the context of chiral antiferromagnetic domain structures, and will inform progress towards topological antiferromagnetic spintronic devices.
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Submitted 13 March, 2019;
originally announced March 2019.
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All Electrical Access to Topological Transport Features in Mn$_{1.8}$PtSn Films
Authors:
Richard Schlitz,
Peter Swekis,
Anastasios Markou,
Helena Reichlova,
Michaela Lammel,
Jacob Gayles,
Andy Thomas,
Kornelius Nielsch,
Claudia Felser,
Sebastian T. B. Goennenwein
Abstract:
The presence of non-trivial magnetic topology can give rise to non-vanishing scalar spin chirality and consequently a topological Hall or Nernst effect. In turn, topological transport signals can serve as indicators for topological spin structures. This is particularly important in thin films or nanopatterned materials where the spin structure is not readily accessible. Conventionally, the topolog…
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The presence of non-trivial magnetic topology can give rise to non-vanishing scalar spin chirality and consequently a topological Hall or Nernst effect. In turn, topological transport signals can serve as indicators for topological spin structures. This is particularly important in thin films or nanopatterned materials where the spin structure is not readily accessible. Conventionally, the topological response is determined by combining magnetotransport data with an independent magnetometry experiment. This approach is prone to introduce measurement artifacts. In this study, we report the observation of large topological Hall and Nernst effects in micropatterned thin films of Mn$_{1.8}$PtSn below the spin reorientation temperature $T_\mathrm{SR} \approx 190$K. The magnitude of the topological Hall effect $ρ_\mathrm{xy}^\mathrm{T} = 8$ n$Ω$m is close to the value reported in bulk Mn$_2$PtSn, and the topological Nernst effect $S_\mathrm{xy}^\mathrm{T} = 115$ nV K$^{-1}$ measured in the same microstructure has a similar magnitude as reported for bulk MnGe ($S_\mathrm{xy}^\mathrm{T} \sim 150$ nV K$^{-1}$), the only other material where a topological Nernst was reported. We use our data as a model system to introduce a topological quantity, which allows to detect the presence of topological transport effects without the need for independent magnetometry data. Our approach thus enables the study of topological transport also in nano-patterned materials without detrimental magnetization related limitations.
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Submitted 4 April, 2020; v1 submitted 19 December, 2018;
originally announced December 2018.
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Topological Hall effect in thin films of Mn$_{1.5}$PtSn
Authors:
Peter Swekis,
Anastasios Markou,
Dominik Kriegner,
Jacob Gayles,
Richard Schlitz,
Walter Schnelle,
Sebastian T. B. Goennenwein,
Claudia Felser
Abstract:
Spin chirality in metallic materials with non-coplanar magnetic order can give rise to a Berry phase induced topological Hall effect. Here, we report the observation of a large topological Hall effect in high-quality films of Mn$_{1.5}$PtSn that were grown by means of magnetron sputtering on MgO(001). The topological Hall resistivity is present up to $μ_{0}H \approx 4~$T below the spin reorientati…
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Spin chirality in metallic materials with non-coplanar magnetic order can give rise to a Berry phase induced topological Hall effect. Here, we report the observation of a large topological Hall effect in high-quality films of Mn$_{1.5}$PtSn that were grown by means of magnetron sputtering on MgO(001). The topological Hall resistivity is present up to $μ_{0}H \approx 4~$T below the spin reorientation transition temperature, $T_{s}=185$~K. We find, that the maximum topological Hall resistivity is of comparable magnitude as the anomalous Hall resistivity. Owing to the size, the topological Hall effect is directly evident prior to the customarily performed subtraction of magnetometry data. Further, we underline the robustness of the topological Hall effect in Mn\textsubscript{2-x}PtSn by extracting the effect for multiple stoichiometries (x~=~0.5, 0.25, 0.1) and film thicknesses (t = 104, 52, 35~nm) with maximum topological Hall resistivities between $0.76~μΩ$cm and $1.55~μΩ$cm at 150~K.
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Submitted 18 October, 2018;
originally announced October 2018.
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Large anomalous Nernst effect in thin films of the Weyl semimetal Co2MnGa
Authors:
Helena Reichlova,
Richard Schlitz,
Sebastian Beckert,
Peter Swekis,
Anastasios Markou,
Yi-Cheng Chen,
Savio Fabretti,
Gyu Hyeon Park,
Anna Niemann,
Shashank Sudheendra,
Andy Thomas,
Kornelius Nielsch,
Claudia Felser,
Sebastian T. B. Goennenwein
Abstract:
The magneto-thermoelectric properties of Heusler compound thin films are very diverse. Here, we discuss the anomalous Nernst response of Co$_2$MnGa thin films. We systematically study the anomalous Nernst coefficient as a function of temperature, and we show that unlike the anomalous Hall effect, the anomalous Nernst effect in Co$_2$MnGa strongly varies with temperature. We exploit the on-chip the…
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The magneto-thermoelectric properties of Heusler compound thin films are very diverse. Here, we discuss the anomalous Nernst response of Co$_2$MnGa thin films. We systematically study the anomalous Nernst coefficient as a function of temperature, and we show that unlike the anomalous Hall effect, the anomalous Nernst effect in Co$_2$MnGa strongly varies with temperature. We exploit the on-chip thermometry technique to quantify the thermal gradient, which enables us to directly evaluate the anomalous Nernst coefficient. We compare these results to a reference CoFeB thin film. We show that the 50-nm-thick Co$_2$MnGa films exhibit a large anomalous Nernst effect of -2$μ$V/K at 300 K, whereas the 10-nm-thick Co$_2$MnGa film exhibits a significantly smaller anomalous Nernst coefficient despite having similar volume magnetizations. These findings suggest that the microscopic origin of the anomalous Nernst effect in Co$_2$MnGa is complex and may contain contributions from skew-scattering, side-jump or intrinsic Berry phase. In any case, the large anomalous Nernst coefficent of Co$_2$MnGa thin films at room temperature makes this material system a very promising candidate for efficient spin-caloritronic devices.
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Submitted 17 July, 2018;
originally announced July 2018.
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Manifestation of the Berry curvature in Co2TiSn Heusler films
Authors:
Benedikt Ernst,
Roshnee Sahoo,
Yan Sun,
Jayita Nayak,
Lukas Muechler,
Ajaya K. Nayak,
Nitesh Kumar,
Anastasios Markou,
Gerhard H. Fecher,
Claudia Felser
Abstract:
Various Co2 based Heusler compounds are predicted to be Weyl materials. These systems with broken symmetry possess a large Berry curvature, and introduce exotic transport properties. The present study on epitaxially grown Co2TiSn films is an initial approach to understand and explore this possibility. The anomalous Hall effect in the well-ordered Co2TiSn films has been investigated both experiment…
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Various Co2 based Heusler compounds are predicted to be Weyl materials. These systems with broken symmetry possess a large Berry curvature, and introduce exotic transport properties. The present study on epitaxially grown Co2TiSn films is an initial approach to understand and explore this possibility. The anomalous Hall effect in the well-ordered Co2TiSn films has been investigated both experimentally and theoretically. The measured Hall conductivity is in good agreement to the calculated Berry curvature. Small deviations between them are due to the influence of skew scattering on the Hall effect. From theoretical point of view, the main contribution to the anomalous Hall effect originates from slightly gapped nodal lines, due to a symmetry reduction induced by the magnetization. It has been found that only part of the nodal lines contributed near to the anomalous Hall conductivity at a fixed Fermi energy which can be explained from a magnetic symmetry analysis. Furthermore, from hard x-ray photoelectron spectroscopy measurements, we establish the electronic structure in the film that is comparable to the theoretical density of states calculations. The present results provide deeper insight into the spintronics from the prospect of topology.
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Submitted 12 October, 2017;
originally announced October 2017.
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Real-Time Simulation and Hardware-in-the-Loop Approaches for Integrating Renewable Energy Sources into Smart Grids: Challenges & Actions
Authors:
Van Hoa Nguyen,
Yvon Besanger,
Quoc Tuan Tran,
Tung Lam Nguyen,
Cederic Boudinet,
Ron Brandl,
Frank Marten,
Achilleas Markou,
Panos Kotsampopoulos,
Arjen A. van der Meer,
Effren Guillo-Sansano,
Georg Lauss,
Thomas I. Strasser,
Kai Heussen
Abstract:
The integration of distributed renewable energy sources and the multi-domain behaviours inside the cyber-physical energy system (smart grids) draws up major challenges. Their validation and roll out requires careful assessment, in term of modelling, simulation and testing. The traditional approach focusing on a particular object, actual hardware or a detailed model, while drastically simplifying t…
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The integration of distributed renewable energy sources and the multi-domain behaviours inside the cyber-physical energy system (smart grids) draws up major challenges. Their validation and roll out requires careful assessment, in term of modelling, simulation and testing. The traditional approach focusing on a particular object, actual hardware or a detailed model, while drastically simplifying the remainder of the system under test, is no longer sufficient. Real-time simulation and Hardware-in-the-Loop (HIL) techniques emerge as indispensable tools for validating the behaviour of renewable sources as well as their impact/interaction to with the cyber-physical energy system. This paper aims to provide an overview of the present status-quo of real-time and HIL approaches used for smart grids and their readiness for cyber-physical experiments. We investigate the current limitations of HIL techniques and point out necessary future developments. Subsequently, the paper highlights challenges that need specific attention as well as ongoing actions and further research directions.
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Submitted 6 October, 2017;
originally announced October 2017.
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Heteroepitaxial growth of tetragonal Mn$_{2.7-x}$Fe$_{x}$Ga$_{1.3}$ (0 $\leqslant$ x $\leqslant$ 1.2) Heusler films with perpendicular magnetic anisotropy
Authors:
Adel Kalache,
Anastasios Markou,
Susanne Selle,
Thomas Höche,
Gerhard H. Fecher,
Claudia Felser
Abstract:
This work reports on the structural and magnetic properties of Mn$_{2.7-x}$Fe$_{x}$Ga$_{1.3}$ Heusler films with different Fe content x (0 $\leqslant$ x $\leqslant$ 1.2). The films were deposited heteroepitaxially on MgO single crystal substrates, by magnetron sputtering. Mn$_{2.7-x}$Fe$_{x}$Ga$_{1.3}$ films with the thickness of 35 nm were crystallized in tetragonal D0$_{22}$ structure with (001)…
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This work reports on the structural and magnetic properties of Mn$_{2.7-x}$Fe$_{x}$Ga$_{1.3}$ Heusler films with different Fe content x (0 $\leqslant$ x $\leqslant$ 1.2). The films were deposited heteroepitaxially on MgO single crystal substrates, by magnetron sputtering. Mn$_{2.7-x}$Fe$_{x}$Ga$_{1.3}$ films with the thickness of 35 nm were crystallized in tetragonal D0$_{22}$ structure with (001) preferred orientation. Tunable magnetic properties were achieved by changing the Fe content x. Mn$_{2.7-x}$Fe$_{x}$Ga$_{1.3}$ thins films exhibit high uniaxial anisotropy Ku $\geqslant$ 1.4 MJ/m3, coercivity from 0.95 to 0.3 T and saturation magnetization from 290 to 570 kA/m. The film with Mn$_{1.6}$Fe$_{1.1}$Ga$_{1.3}$ composition shows high Ku of 1.47 MJ/m3 and energy product ${(BH)_{max}}$ of 37 kJ/m3, at room temperature. These findings demonstrate that Mn$_{2.7-x}$Fe$_{x}$Ga$_{1.3}$ films have promising properties for mid-range permanent magnet and spintronic applications.
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Submitted 30 May, 2017;
originally announced May 2017.
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Observation of the rare $B^0_s\toμ^+μ^-$ decay from the combined analysis of CMS and LHCb data
Authors:
The CMS,
LHCb Collaborations,
:,
V. Khachatryan,
A. M. Sirunyan,
A. Tumasyan,
W. Adam,
T. Bergauer,
M. Dragicevic,
J. Erö,
M. Friedl,
R. Frühwirth,
V. M. Ghete,
C. Hartl,
N. Hörmann,
J. Hrubec,
M. Jeitler,
W. Kiesenhofer,
V. Knünz,
M. Krammer,
I. Krätschmer,
D. Liko,
I. Mikulec,
D. Rabady,
B. Rahbaran
, et al. (2807 additional authors not shown)
Abstract:
A joint measurement is presented of the branching fractions $B^0_s\toμ^+μ^-$ and $B^0\toμ^+μ^-$ in proton-proton collisions at the LHC by the CMS and LHCb experiments. The data samples were collected in 2011 at a centre-of-mass energy of 7 TeV, and in 2012 at 8 TeV. The combined analysis produces the first observation of the $B^0_s\toμ^+μ^-$ decay, with a statistical significance exceeding six sta…
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A joint measurement is presented of the branching fractions $B^0_s\toμ^+μ^-$ and $B^0\toμ^+μ^-$ in proton-proton collisions at the LHC by the CMS and LHCb experiments. The data samples were collected in 2011 at a centre-of-mass energy of 7 TeV, and in 2012 at 8 TeV. The combined analysis produces the first observation of the $B^0_s\toμ^+μ^-$ decay, with a statistical significance exceeding six standard deviations, and the best measurement of its branching fraction so far. Furthermore, evidence for the $B^0\toμ^+μ^-$ decay is obtained with a statistical significance of three standard deviations. The branching fraction measurements are statistically compatible with SM predictions and impose stringent constraints on several theories beyond the SM.
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Submitted 17 August, 2015; v1 submitted 17 November, 2014;
originally announced November 2014.
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Radiation hardness qualification of PbWO4 scintillation crystals for the CMS Electromagnetic Calorimeter
Authors:
The CMS Electromagnetic Calorimeter Group,
P. Adzic,
N. Almeida,
D. Andelin,
I. Anicin,
Z. Antunovic,
R. Arcidiacono,
M. W. Arenton,
E. Auffray,
S. Argiro,
A. Askew,
S. Baccaro,
S. Baffioni,
M. Balazs,
D. Bandurin,
D. Barney,
L. M. Barone,
A. Bartoloni,
C. Baty,
S. Beauceron,
K. W. Bell,
C. Bernet,
M. Besancon,
B. Betev,
R. Beuselinck
, et al. (245 additional authors not shown)
Abstract:
Ensuring the radiation hardness of PbWO4 crystals was one of the main priorities during the construction of the electromagnetic calorimeter of the CMS experiment at CERN. The production on an industrial scale of radiation hard crystals and their certification over a period of several years represented a difficult challenge both for CMS and for the crystal suppliers. The present article reviews t…
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Ensuring the radiation hardness of PbWO4 crystals was one of the main priorities during the construction of the electromagnetic calorimeter of the CMS experiment at CERN. The production on an industrial scale of radiation hard crystals and their certification over a period of several years represented a difficult challenge both for CMS and for the crystal suppliers. The present article reviews the related scientific and technological problems encountered.
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Submitted 21 December, 2009;
originally announced December 2009.
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On Gravity and Mass
Authors:
Athanasios Markou
Abstract:
Motivated mainly by the fact that no charged elementary particles having zero mass have been observed up to now, we investigate the question whether the mass of the elementary particles is connected with their electric charge and whether gravity can be derived from QED. The graviton is considered as a two-photon bound state. A relation between mass and charge of elementary particles is derived.…
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Motivated mainly by the fact that no charged elementary particles having zero mass have been observed up to now, we investigate the question whether the mass of the elementary particles is connected with their electric charge and whether gravity can be derived from QED. The graviton is considered as a two-photon bound state. A relation between mass and charge of elementary particles is derived. Masses of the light quarks $d$ and $u$ are calculated from the electron mass, assuming that $d$, $u$ and $e$ are all fundamental and not composite. In this picture, the heavier quarks and leptons are considered as not fundamental, the massive neutral gauge bosons (and then their charged partners) are composite. The here calculated $u$ and $d$ quark masses, result in quark-mass ratios which display interesting regularities. The lightest quark mass turns out to be quite small. This may be interesting in connection to the strong CP problem.
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Submitted 3 March, 2009;
originally announced March 2009.
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On the observability of free quarks near their production thresholds
Authors:
A. Markou
Abstract:
It is proposed to search for free quarks near their production thresholds. If the current-quark masses for u, d quarks are smaller than the pion mass, $u\bar{u}$ and $d\bar{d}$ pairs produced below the pion pair threshold, would not have sufficient energy to hadronize and could be observable. In the case of large u,d quark masses and also for the heavy quarks, production near threshold may show…
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It is proposed to search for free quarks near their production thresholds. If the current-quark masses for u, d quarks are smaller than the pion mass, $u\bar{u}$ and $d\bar{d}$ pairs produced below the pion pair threshold, would not have sufficient energy to hadronize and could be observable. In the case of large u,d quark masses and also for the heavy quarks, production near threshold may show hadronization probability $<1$, and lead to free quarks. Searches for fractional charges in stable matter could be more promising, through irradiation of samples at energies near the quark pair production thresholds.
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Submitted 25 October, 1998; v1 submitted 23 October, 1998;
originally announced October 1998.