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Large Rashba unidirectional magnetoresistance in the Fe/Ge(111) interface states
Authors:
T. Guillet,
C. Zucchetti,
A. Marty,
G. Isella,
C. Vergnaud,
Q. Barbedienne,
H. Jaffrès,
N. Reyren,
J. -M. George,
A. Fert,
M. Jamet
Abstract:
The structure inversion asymmetry at surfaces and interfaces give rise to the Rashba spin-orbit interaction (SOI), that breaks the spin degeneracy of surface or interface states. Hence, when an electric current runs through a surface or interface, this Rashba effect generates an effective magnetic field acting on the electron spin. This provides an additional tool to manipulate the spin state in m…
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The structure inversion asymmetry at surfaces and interfaces give rise to the Rashba spin-orbit interaction (SOI), that breaks the spin degeneracy of surface or interface states. Hence, when an electric current runs through a surface or interface, this Rashba effect generates an effective magnetic field acting on the electron spin. This provides an additional tool to manipulate the spin state in materials such as Si and Ge that, in their bulk form, possess inversion symmetry (or lack structural inersion asymmetry). The existence of Rashba states could be demonstrated by photoemission spectroscopy at the interface between different metals and Ge(111) and by spin-charge conversion experiments at the Fe/Ge(111) interface even though made of two light elements. In this work, we identify the fingerprint of the Rashba states at the Fe/Ge(111) interface by magnetotransport measurements in the form of a large unidirectional magnetoresistance of up to 0.1 \%. From its temperature dependence, we find that the Rashba energy splitting is larger than in pure Ge(111) subsurface states.
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Submitted 31 October, 2020;
originally announced November 2020.
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Observation of Large Unidirectional Rashba Magnetoresistance in Ge(111)
Authors:
T. Guillet,
C. Zucchetti,
Q. Barbedienne,
A. Marty,
G. Isella,
L. Cagnon,
C. Vergnaud,
N. Reyren,
J. -M. George,
A. Fert,
M. Jamet
Abstract:
Relating magnetotransport properties to specific spin textures at surfaces or interfaces is an intense field of research nowadays. Here, we investigate the variation of the electrical resistance of Ge(111) grown epitaxially on semi-insulating Si(111) under the application of an external magnetic field. We find a magnetoresistance term which is linear in current density j and magnetic field B, henc…
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Relating magnetotransport properties to specific spin textures at surfaces or interfaces is an intense field of research nowadays. Here, we investigate the variation of the electrical resistance of Ge(111) grown epitaxially on semi-insulating Si(111) under the application of an external magnetic field. We find a magnetoresistance term which is linear in current density j and magnetic field B, hence odd in j and B, corresponding to a unidirectional magnetoresistance. At 15 K, for I = 10 $μ$A (or j = 0.33 A/m) and B = 1 T, it represents 0.5 % of the zero field resistance, a much higher value compared to previous reports on unidirectional magnetoresistance. We ascribe the origin of this magnetoresistance to the interplay between the externally applied magnetic field and the current-induced pseudo-magnetic field in the spin-splitted subsurface states of Ge(111). This unidirectional magnetoresistance is independent of the current direction with respect to the Ge crystal axes. It progressively vanishes, either using a negative gate voltage due to carrier activation into the bulk (without spin-splitted bands), or by increasing the temperature due to the Rashba energy splitting of the subsurface states lower than $\sim$58 k$_B$. The highly developed technologies on semiconductor platforms would allow the rapid optimization of devices based on this phenomenon.
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Submitted 11 June, 2019;
originally announced June 2019.
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Unconventional anomalous Hall effect in 3d/5d multilayers mediated by the nonlocal spin-conductivity
Authors:
T. Huong Dang,
Q. Barbedienne,
Q. D. To,
E. Rongione,
N. Reyren,
F. Godel,
S. Collin,
J. M. George,
H. Jaffrès
Abstract:
We evidenced unconventionnal Anomalous Hall Effects (AHE) in 3d/5d (Co0.2nm/Ni0.6nm)N multilayers grown on a thin Pt layer or thin Au:W alloy. The inversion observed on AHE originates from the opposite sign of the spin-orbit coupling of Pt compared to Ni. Via advanced simulations methods for the description of the spin-current profiles based on the spin-dependent Boltzmann formalism, we extracted…
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We evidenced unconventionnal Anomalous Hall Effects (AHE) in 3d/5d (Co0.2nm/Ni0.6nm)N multilayers grown on a thin Pt layer or thin Au:W alloy. The inversion observed on AHE originates from the opposite sign of the spin-orbit coupling of Pt compared to Ni. Via advanced simulations methods for the description of the spin-current profiles based on the spin-dependent Boltzmann formalism, we extracted the spin Hall angle (SHA) of Pt and (Co/Ni) as well as the relevant transport parameters. The extracted SHA for Pt, +20%, is opposite to the one of (Co/Ni), giving rise to an effective AHE inversion for thin (Co/Ni) multilayers (N < 17). The spin Hall angle in Pt is found to be larger than the one previously measured in combined spin-pumping inverse spin-Hall effect experiments in a geometry of current perpendicular to plane. Whereas magnetic proximity effects cannot explain the effect, spin-current leakage and anisotropic electron scattering at Pt/(Co,Ni) interfaces fit the experiments.
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Submitted 5 October, 2020; v1 submitted 10 February, 2019;
originally announced February 2019.
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ARPES and transport studies of the elemental topological insulator $α$-Sn
Authors:
Quentin Barbedienne,
Julien Varignon,
Nicolas Reyren,
Alain Marty,
Celine Vergnaud,
Matthieu Jamet,
Carmen Gomez-Carbonell,
Aristide Lemaître,
Patrick Le Fèvre,
François Bertran,
Amina Taleb-Ibrahimi,
Henri Jaffrès,
Jean-Marie George,
Albert Fert
Abstract:
Gray tin, also known as $α$-Sn, can be turned into a three-dimensional topological insulator (3D-TI) by strain and finite size effects. Such room temperature 3D-TI is peculiarly interesting for spintronics due to the spin-momentum locking along the Dirac cone (linear dispersion) of the surface states. Angle resolved photoemission spectroscopy (ARPES) has been used to investigate the dispersion clo…
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Gray tin, also known as $α$-Sn, can be turned into a three-dimensional topological insulator (3D-TI) by strain and finite size effects. Such room temperature 3D-TI is peculiarly interesting for spintronics due to the spin-momentum locking along the Dirac cone (linear dispersion) of the surface states. Angle resolved photoemission spectroscopy (ARPES) has been used to investigate the dispersion close to the Fermi level in thin (0\,0\,1)-oriented epitaxially strained films of $α$-Sn, for different film thicknesses as well as for different capping layers (Al, AlO$_x$ and MgO). Indeed a proper capping layer is necessary to be able to use $α$-Sn surface states for spintronics applications. In contrast with free surfaces or surfaces coated with Ag, coating the $α$-Sn surface with Al or AlO$_x$ leads to a drop of the Fermi level below the Dirac point, an important consequence for transport is the presence of bulk states at the Fermi level. $α$-Sn films coated by AlO$_x$ are studied by electrical magnetotransport: despite clear evidence of surface states revealed by Shubnikov-de Haas oscillations, an important part of the magneto-transport properties is governed by "bulk" electronic states attributed to the $Γ8$ band, as suggested by {\it ab-initio} calculations.
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Submitted 30 November, 2018; v1 submitted 30 July, 2018;
originally announced July 2018.
