Showing 1–21 of 21 results for author: Sierra, J F

Spin-orbit torque switching in 2D ferromagnet / topological insulator heterostructure grown by molecular beam epitaxy

Authors: Thomas Guillet, Regina V. Galcera, Juan F. Sierra, Marius V. Costache, Matthieu Jamet, Frédéric Bonell, Sergio O. Valenzuela

Abstract: Topological insulators (TIs) are a promising class of materials for manipulating the magnetization of an adjacent ferromagnet (FM) through the spin-orbit torque (SOT) mechanism. However, current studies combining TIs with conventional FMs present large device-to-device variations, resulting in a broad distribution of SOT magnitudes. It has been identified that the interfacial quality between the T… ▽ More Topological insulators (TIs) are a promising class of materials for manipulating the magnetization of an adjacent ferromagnet (FM) through the spin-orbit torque (SOT) mechanism. However, current studies combining TIs with conventional FMs present large device-to-device variations, resulting in a broad distribution of SOT magnitudes. It has been identified that the interfacial quality between the TI and the FM is of utmost importance in determining the nature and efficiency of the SOT. To optimize the SOT magnitude and enable ultra-low-power magnetization switching, an atomically smooth interface is necessary. To this end, we have developed the growth of a full van der Waals FM/TI heterostructure by molecular beam epitaxy. The compensated TI (Bi0.4Sb0.6)2Te3 and ferromagnetic Fe3GeTe2 (FGT) were chosen because of their exceptional crystalline quality, low carrier concentration in BST and relatively large Curie temperature and perpendicular magnetic anisotropy in FGT. We characterized the magnitude of the SOTs by using thorough harmonic magnetotransport measurements and showed that the magnetization of an ultrathin FGT film could be switched with a current density Jc < 10^10 A/m^2. In comparison to previous studies utilizing traditional FMs, our findings are highly reliable, displaying little to no variation between devices. △ Less

Submitted 2 February, 2023; originally announced February 2023.

Resolving spin currents and spin densities generated by charge-spin interconversion in systems with reduced crystal symmetry

Authors: Lorenzo Camosi, Josef Svetlik, Marius V. Costache, Williams Savero Torres, Iván Fernández Aguirre, Vera Marinova, Dimitre Dimitrov, Marin Gospodinov, Juan F. Sierra, Sergio O. Valenzuela

Abstract: The ability to control the generation of spins in arbitrary directions is a long-sought goal in spintronics. Charge-to-spin interconversion (CSI) phenomena depend strongly on symmetry. Systems with reduced crystal symmetry allow anisotropic CSI with unconventional components, where charge and spin currents and the spin polarization are not mutually perpendicular to each other. Here, we demonstrate… ▽ More The ability to control the generation of spins in arbitrary directions is a long-sought goal in spintronics. Charge-to-spin interconversion (CSI) phenomena depend strongly on symmetry. Systems with reduced crystal symmetry allow anisotropic CSI with unconventional components, where charge and spin currents and the spin polarization are not mutually perpendicular to each other. Here, we demonstrate experimentally that the CSI in graphene-WTe2 induces spins with components in all three spatial directions. By performing multi-terminal nonlocal spin precession experiments, with specific magnetic field orientations, we discuss how to disentangle the CSI from the spin Hall and inverse spin galvanic effects. △ Less

Submitted 22 December, 2022; originally announced December 2022.

Journal ref: 2D Materials 9, 035014 (2022)

Van der Waals heterostructures for spintronics and opto-spintronics

Authors: Juan F. Sierra, Jaroslav Fabian, Roland K. Kawakami, Stephan Roche, Sergio O. Valenzuela

Abstract: The large variety of 2D materials and their co-integration in van der Waals (vdW) heterostructures enable innovative device engineering. In addition, their atomically-thin nature promotes the design of artificial materials by proximity effects that originate from short-range interactions. Such a designer approach is particularly compelling for spintronics, which typically harnesses functionalities… ▽ More The large variety of 2D materials and their co-integration in van der Waals (vdW) heterostructures enable innovative device engineering. In addition, their atomically-thin nature promotes the design of artificial materials by proximity effects that originate from short-range interactions. Such a designer approach is particularly compelling for spintronics, which typically harnesses functionalities from thin layers of magnetic and non-magnetic materials and the interfaces between them. Here, we overview recent progress on 2D spintronics and opto-spintronics using vdW heterostructures. After an introduction to the forefront of spin transport research, we highlight the unique spin-related phenomena arising from spin-orbit and magnetic proximity effects. We further describe the ability to create multi-functional hybrid heterostructures based on vdW materials, combining spin, valley and excitonic degrees of freedom. We end with an outlook on perspectives and challenges for the design and production of ultra-compact all-2D spin devices and their potential applications in conventional and quantum technologies. △ Less

Submitted 19 October, 2021; originally announced October 2021.

Comments: Review article. 39 pages, 5 figures, 2 tables. Full-text access at the SharedIt link https://rdcu.be/cpbSv

Journal ref: Nat. Nanotechnol.16, 856 (2021)

Heat dissipation in few-layer MoS2 and MoS2/hBN heterostructure

Authors: Alois Arrighi, Elena del Corro, Daniel Navarro Urrios, Marius V. Costache, Juan F. Sierra, Kenji Watanabe, Takashi Taniguchi, J. A. Garrido, Sergio O. Valenzuela, Clivia M. Sotomayor Torres, Marianna Sledzinska

Abstract: State-of-the-art fabrication and characterization techniques have been employed to measure the thermal conductivity of suspended, single-crystalline MoS2 and MoS2/hBN heterostructures. Two-laser Raman scattering thermometry was used combined with real time measurements of the absorbed laser power, which allowed us to determine the thermal conductivities without any assumptions. Measurements on MoS… ▽ More State-of-the-art fabrication and characterization techniques have been employed to measure the thermal conductivity of suspended, single-crystalline MoS2 and MoS2/hBN heterostructures. Two-laser Raman scattering thermometry was used combined with real time measurements of the absorbed laser power, which allowed us to determine the thermal conductivities without any assumptions. Measurements on MoS2 layers with thicknesses of 5 and 14 exhibit thermal conductivity in the range between 12 and 24 Wm-1K-1. Additionally, after determining the thermal conductivity of a selected MoS2 sample, an hBN flake was transferred onto it and the effective thermal conductivity of the heterostructure was subsequently measured. Remarkably, despite that the thickness of the hBN layer was less than a third of the thickness of the MoS2 layer, the heterostructure showed an almost eight-fold increase in the thermal conductivity, being able to dissipate more than 10 times the laser power without any visible sign of damage. These results are consistent with a high thermal interface conductance between MoS2 and hBN and an efficient in-plane heat spreading driven by hBN. Indeed, we estimate G 70 MWm-2K-1 which is significantly higher than previously reported values. Our work therefore demonstrates that the insertion of hBN layers in potential MoS2 based devices holds the promise for efficient thermal management. △ Less

Submitted 14 July, 2021; originally announced July 2021.

Control of spin-orbit torques by interface engineering in topological insulator heterostructures

Authors: Frédéric Bonell, Minori Goto, Guillaume Sauthier, Juan F. Sierra, Adriana I. Figueroa, Marius V. Costache, Shinji Miwa, Yoshishige Suzuki, Sergio O. Valenzuela

Abstract: (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ topological insulators (TIs) are gathering increasing attention owing to their large charge-to-spin conversion efficiency and the ensuing spin-orbit torques (SOTs) that can be used to manipulate the magnetization of a ferromagnet (FM). The origin of the torques, however, remains elusive, while the implications of hybridized states and the strong material intermixing at… ▽ More (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ topological insulators (TIs) are gathering increasing attention owing to their large charge-to-spin conversion efficiency and the ensuing spin-orbit torques (SOTs) that can be used to manipulate the magnetization of a ferromagnet (FM). The origin of the torques, however, remains elusive, while the implications of hybridized states and the strong material intermixing at the TI/FM interface are essentially unexplored. By combining interface chemical analysis and spin-transfer ferromagnetic resonance (ST-FMR) measurements, we demonstrate that intermixing plays a critical role in the generation of SOTs. By inserting a suitable normal metal spacer, material intermixing is reduced and the TI properties at the interface are largely improved, resulting in strong variations in the nature of the SOTs. A dramatic enhancement of a field-like torque, opposing and surpassing the Oersted-field torque, is observed, which can be attributed to the non-equilibrium spin density in Rashba-split surface bands and to the suppression of spin memory loss. △ Less

Submitted 17 September, 2020; originally announced September 2020.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nanoletters, ©American Chemical Society after peer review

Journal ref: Nano Lett. 2020, 20, 8, 5893-5899

Tunable room-temperature spin galvanic and spin Hall effects in van der Waals heterostructures

Authors: L. Antonio Benítez, Williams Savero Torres, Juan F. Sierra, Matias Timmermans, Jose H. Garcia, Stephan Roche, Marius V. Costache, Sergio O. Valenzuela

Abstract: Spin-orbit coupling stands as a powerful tool to interconvert charge and spin currents and to manipulate the magnetization of magnetic materials through the spin torque phenomena. However, despite the diversity of existing bulk materials and the recent advent of interfacial and low-dimensional effects, control of the interconvertion at room-temperature remains elusive. Here, we unequivocally demon… ▽ More Spin-orbit coupling stands as a powerful tool to interconvert charge and spin currents and to manipulate the magnetization of magnetic materials through the spin torque phenomena. However, despite the diversity of existing bulk materials and the recent advent of interfacial and low-dimensional effects, control of the interconvertion at room-temperature remains elusive. Here, we unequivocally demonstrate strongly enhanced room-temperature spin-to-charge (StC) conversion in graphene driven by the proximity of a semiconducting transition metal dichalcogenide(WS2). By performing spin precession experiments in properly designed Hall bars, we separate the contributions of the spin Hall and the spin galvanic effects. Remarkably, their corresponding conversion effiencies can be tailored by electrostatic gating in magnitude and sign, peaking nearby the charge neutrality point with a magnitude that is comparable to the largest efficiencies reported to date. Such an unprecedented electric-field tunability provides a new building block for spin generation free from magnetic materials and for ultra-compact magnetic memory technologies. △ Less

Submitted 21 August, 2019; originally announced August 2019.

Comments: 13 pages, 4 figures

Spin communication over 30 $μ$m long channels of chemical vapor deposited graphene on SiO$_2$

Authors: Z. M. Gebeyehu, S. Parui, J. F. Sierra, M. Timmermans, M. J. Esplandiu, S. Brems, C. Huyghebaert, K. Garello, M. V. Costache, S. O. Valenzuela

Abstract: We demonstrate a high-yield fabrication of non-local spin valve devices with room-temperature spin lifetimes of up to 3 ns and spin relaxation lengths as long as 9 $μ$m in platinum-based chemical vapor deposition (Pt-CVD) synthesized single-layer graphene on SiO$_2$/Si substrates. The spin-lifetime systematically presents a marked minimum at the charge neutrality point, as typically observed in pr… ▽ More We demonstrate a high-yield fabrication of non-local spin valve devices with room-temperature spin lifetimes of up to 3 ns and spin relaxation lengths as long as 9 $μ$m in platinum-based chemical vapor deposition (Pt-CVD) synthesized single-layer graphene on SiO$_2$/Si substrates. The spin-lifetime systematically presents a marked minimum at the charge neutrality point, as typically observed in pristine exfoliated graphene. However, by studying the carrier density dependence beyond n ~ 5 x 10$^{12}$ cm$^{-2}$, via electrostatic gating, it is found that the spin lifetime reaches a maximum and then starts decreasing, a behavior that is reminiscent of that predicted when the spin-relaxation is driven by spin-orbit interaction. The spin lifetimes and relaxation lengths compare well with state-of-the-art results using exfoliated graphene on SiO$_2$/Si, being a factor two-to-three larger than the best values reported at room temperature using the same substrate. As a result, the spin signal can be readily measured across 30 $μ$m long graphene channels. These observations indicate that Pt-CVD graphene is a promising material for large-scale spin-based logic-in-memory applications. △ Less

Submitted 13 May, 2019; originally announced May 2019.

Journal ref: 2D Materials, 6, 034003 (2019)

Determination of the spin-lifetime anisotropy in graphene using oblique spin precession

Authors: Bart Raes, Jeroen E. Scheerder, Marius V. Costache, Frédéric Bonell, Juan F. Sierra, Jo Cuppens, Joris Van de Vondel, Sergio O. Valenzuela

Abstract: We determine the spin-lifetime anisotropy of spin-polarized carriers in graphene. In contrast to prior approaches, our method does not require large out-of-plane magnetic fields and thus it is reliable for both low- and high-carrier densities. We first determine the in-plane spin lifetime by conventional spin precession measurements with magnetic fields perpendicular to the graphene plane. Then, t… ▽ More We determine the spin-lifetime anisotropy of spin-polarized carriers in graphene. In contrast to prior approaches, our method does not require large out-of-plane magnetic fields and thus it is reliable for both low- and high-carrier densities. We first determine the in-plane spin lifetime by conventional spin precession measurements with magnetic fields perpendicular to the graphene plane. Then, to evaluate the out-of-plane spin lifetime, we implement spin precession measurements under oblique magnetic fields that generate an out-of-plane spin population. We find that the spin-lifetime anisotropy of graphene on silicon oxide is independent of carrier density and temperature down to 150 K, and much weaker than previously reported. Indeed, within the experimental uncertainty, the spin relaxation is isotropic. Altogether with the gate dependence of the spin lifetime, this indicates that the spin relaxation is driven by magnetic impurities or random spin-orbit or gauge fields. △ Less

Submitted 25 April, 2018; originally announced April 2018.

Comments: Final version published in Nature Communications under a Creative Commons Attribution 4.0 International License

Journal ref: Nature Communications, 7, 11444 (2016)

Spin precession in anisotropic media

Authors: B. Raes, A. W. Cummings, F. Bonell, M. V. Costache, J. F. Sierra, S. Roche, S. O. Valenzuela

Abstract: We generalize the diffusive model for spin injection and detection in nonlocal spin structures to account for spin precession under an applied magnetic field in an anisotropic medium, for which the spin lifetime is not unique and depends on the spin orientation.We demonstrate that the spin precession (Hanle) line shape is strongly dependent on the degree of anisotropy and on the orientation of the… ▽ More We generalize the diffusive model for spin injection and detection in nonlocal spin structures to account for spin precession under an applied magnetic field in an anisotropic medium, for which the spin lifetime is not unique and depends on the spin orientation.We demonstrate that the spin precession (Hanle) line shape is strongly dependent on the degree of anisotropy and on the orientation of the magnetic field. In particular, we show that the anisotropy of the spin lifetime can be extracted from the measured spin signal, after dephasing in an oblique magnetic field, by using an analytical formula with a single fitting parameter. Alternatively, after identifying the fingerprints associated with the anisotropy, we propose a simple scaling of the Hanle line shapes at specific magnetic field orientations that results in a universal curve only in the isotropic case. The deviation from the universal curve can be used as a complementary means of quantifying the anisotropy by direct comparison with the solution of our generalized model. Finally, we applied our model to graphene devices and find that the spin relaxation for graphene on silicon oxide is isotropic within our experimental resolution. △ Less

Submitted 25 April, 2018; originally announced April 2018.

Journal ref: Physical Review B, 95, 085403 (2017)

Thermoelectric spin voltage in graphene

Authors: Juan F. Sierra, Ingmar Neumann, Jo Cuppens, Bart Raes, Marius V. Costache, Sergio O. Valenzuela

Abstract: In recent years, new spin-dependent thermal effects have been discovered in ferromagnets, stimulating a growing interest in spin caloritronics, a field that exploits the interaction between spin and heat currents. Amongst the most intriguing phenomena is the spin Seebeck effect, in which a thermal gradient gives rise to spin currents that are detected through the inverse spin Hall effect. Non-magn… ▽ More In recent years, new spin-dependent thermal effects have been discovered in ferromagnets, stimulating a growing interest in spin caloritronics, a field that exploits the interaction between spin and heat currents. Amongst the most intriguing phenomena is the spin Seebeck effect, in which a thermal gradient gives rise to spin currents that are detected through the inverse spin Hall effect. Non-magnetic materials such as graphene are also relevant for spin caloritronics, thanks to efficient spin transport, energy-dependent carrier mobility and unique density of states. Here, we propose and demonstrate that a carrier thermal gradient in a graphene lateral spin valve can lead to a large increase of the spin voltage near to the graphene charge neutrality point. Such an increase results from a thermoelectric spin voltage, which is analogous to the voltage in a thermocouple and that can be enhanced by the presence of hot carriers generated by an applied current. These results could prove crucial to drive graphene spintronic devices and, in particular, to sustain pure spin signals with thermal gradients and to tune the remote spin accumulation by varying the spin-injection bias. △ Less

Submitted 25 April, 2018; originally announced April 2018.

Journal ref: Nature Nanotechnology, 13, 107 (2018)

Strongly anisotropic spin relaxation in graphene/transition metal dichalcogenide heterostructures at room temperature

Authors: Luis. A. Benítez, Juan. F. Sierra, Williams Savero Torres, Aloïs Arrighi, Frédéric Bonell, Marius. V. Costache, Sergio. O. Valenzuela

Abstract: Graphene has emerged as the foremost material for future two-dimensional spintronics due to its tuneable electronic properties. In graphene, spin information can be transported over long distances and, in principle, be manipulated by using magnetic correlations or large spin-orbit coupling (SOC) induced by proximity effects. In particular, a dramatic SOC enhancement has been predicted when interfa… ▽ More Graphene has emerged as the foremost material for future two-dimensional spintronics due to its tuneable electronic properties. In graphene, spin information can be transported over long distances and, in principle, be manipulated by using magnetic correlations or large spin-orbit coupling (SOC) induced by proximity effects. In particular, a dramatic SOC enhancement has been predicted when interfacing graphene with a semiconducting transition metal dechalcogenide, such as tungsten disulphide (WS$_2$). Signatures of such an enhancement have recently been reported but the nature of the spin relaxation in these systems remains unknown. Here, we unambiguously demonstrate anisotropic spin dynamics in bilayer heterostructures comprising graphene and WS$_2$. By using out-of-plane spin precession, we show that the spin lifetime is largest when the spins point out of the graphene plane. Moreover, we observe that the spin lifetime varies over one order of magnitude depending on the spin orientation, indicating that the strong spin-valley coupling in WS$_2$ is imprinted in the bilayer and felt by the propagating spins. These findings provide a rich platform to explore coupled spin-valley phenomena and offer novel spin manipulation strategies based on spin relaxation anisotropy in two-dimensional materials. △ Less

Submitted 25 April, 2018; v1 submitted 31 October, 2017; originally announced October 2017.

Journal ref: Nature Physics, 14, 303 (2018)

Spin precession and spin Hall effect in monolayer graphene/Pt nanostructures

Authors: W. Savero Torres, J. F. Sierra, L. A. Benítez, F. Bonell, M. V. Costache, S. O. Valenzuela

Abstract: Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we demonstrate a two-order of magnitude enhancement of the signal in monolayer graphene/Pt devices when compared to their fully metallic counterparts. The enhancemen… ▽ More Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we demonstrate a two-order of magnitude enhancement of the signal in monolayer graphene/Pt devices when compared to their fully metallic counterparts. The enhancement stems in part from efficient spin injection and the large resistivity of graphene but we also observe 100% spin absorption in Pt and find an unusually large effective spin Hall angle of up to 0.15. The large spin-to-charge conversion allows us to characterise spin precession in graphene under the presence of a magnetic field. Furthermore, by developing an analytical model based on the 1D diffusive spin-transport, we demonstrate that the effective spin-relaxation time in graphene can be accurately determined using the (inverse) spin Hall effect as a means of detection. This is a necessary step to gather full understanding of the consequences of spin absorption in spin Hall devices, which is known to suppress effective spin lifetimes in both metallic and graphene systems. △ Less

Submitted 6 September, 2017; originally announced September 2017.

Comments: 14 pages, 6 figures. Accepted in 2D Materials. https://doi.org/10.1088/2053-1583/aa8823

Enhanced spin accumulation at room temperature in graphene spin valves with amorphous carbon interfacial layers

Authors: I. Neumann, M. V. Costache, G. Bridoux, J. F. Sierra, S. O. Valenzuela

Abstract: We demonstrate a large enhancement of the spin accumulation in monolayer graphene following electron-beam induced deposition of an amorphous carbon layer at the ferromagnet-graphene interface. The enhancement is 10^4-fold when graphene is deposited onto poly(methyl metacrylate) (PMMA) and exposed with sufficient electron-beam dose to cross-link the PMMA, and 10^3-fold when graphene is deposited di… ▽ More We demonstrate a large enhancement of the spin accumulation in monolayer graphene following electron-beam induced deposition of an amorphous carbon layer at the ferromagnet-graphene interface. The enhancement is 10^4-fold when graphene is deposited onto poly(methyl metacrylate) (PMMA) and exposed with sufficient electron-beam dose to cross-link the PMMA, and 10^3-fold when graphene is deposited directly onto SiO2 and exposed with identical dose. We attribute the difference to a more efficient carbon deposition in the former case due to an increase in the presence of compounds containing carbon, which are released by the PMMA. The amorphous carbon interface can sustain very large current densities without degrading, which leads to very large spin accumulations exceeding 500 microeVs at room temperature. △ Less

Submitted 15 June, 2015; originally announced June 2015.

Journal ref: Appl. Phys. Lett. 103, 112401 (2013)

Hot-Carrier Seebeck Effect: Diffusion and Remote Detection of Hot Carriers in Graphene

Authors: J. F. Sierra, I. Neumann, M. V. Costache, S. O. Valenzuela

Abstract: We investigate hot carrier propagation across graphene using an electrical nonlocal injection/detection method. The device consists of a monolayer graphene flake contacted by multiple metal leads. Using two remote leads for electrical heating, we generate a carrier temperature gradient that results in a measurable thermoelectric voltage VNL across the remaining (detector) leads. Due to the nonloca… ▽ More We investigate hot carrier propagation across graphene using an electrical nonlocal injection/detection method. The device consists of a monolayer graphene flake contacted by multiple metal leads. Using two remote leads for electrical heating, we generate a carrier temperature gradient that results in a measurable thermoelectric voltage VNL across the remaining (detector) leads. Due to the nonlocal character of the measurement, VNL is exclusively due to the Seebeck effect. Remarkably, a departure from the ordinary relationship between Joule power P and VNL, VNL ~ P, becomes readily apparent at low temperatures, representing a fingerprint of hot-carrier dominated thermoelectricity. By studying VNL as a function of bias, we directly determine the carrier temperature and the characteristic cooling length for hot-carrier propagation, which are key parameters for a variety of new applications that rely on hot-carrier transport. △ Less

Submitted 15 June, 2015; originally announced June 2015.

Journal ref: Nano Letters, pp 4000-4005, 15 (2015)

Fingerprints of Inelastic Transport at the Surface of the Topological Insulator Bi2Se3: Role of Electron-Phonon Coupling

Authors: M. V. Costache, I. Neumann, J. F. Sierra, V. Marinova, M. M. Gospodinov, S. Roche, S. O. Valenzuela

Abstract: We report on electric-field and temperature dependent transport measurements in exfoliated thin crystals of Bi$_{2}$Se$_{3}$ topological insulator. At low temperatures ($< 50$ K) and when the chemical potential lies inside the bulk gap, the crystal resistivity is strongly temperature dependent, reflecting inelastic scattering due to the thermal activation of optical phonons. A linear increase of t… ▽ More We report on electric-field and temperature dependent transport measurements in exfoliated thin crystals of Bi$_{2}$Se$_{3}$ topological insulator. At low temperatures ($< 50$ K) and when the chemical potential lies inside the bulk gap, the crystal resistivity is strongly temperature dependent, reflecting inelastic scattering due to the thermal activation of optical phonons. A linear increase of the current with voltage is obtained up to a threshold value at which current saturation takes place. We show that the activated behavior, the voltage threshold and the saturation current can all be quantitatively explained by considering a single optical phonon mode with energy $\hbar Ω\approx 8$ meV. This phonon mode strongly interacts with the surface states of the material and represents the dominant source of scattering at the surface at high electric fields. △ Less

Submitted 8 April, 2014; originally announced April 2014.

Comments: Supplementary Material at: http://journals.aps.org/prl/supplemental/10.1103/PhysRevLett.112.086601/TIPhonon_SM.pdf

Journal ref: Phys. Rev. Lett. 112, 086601 (2014)

Temperature dependence of the emission linewidth in MgO-based spin torque nano-oscillators

Authors: J. F. Sierra, M. Quinsat, U. Ebels, D. Gusakova, I. Joumard, A. S. Jenkins, L. Buda-Prejbeanu, B. Dieny, M. C. Cyrille, A. Zeltser, J. A. Katine

Abstract: Spin transfer driven excitations in magnetic nanostructures are characterized by a relatively large microwave emission linewidth (10 -100 MHz). Here we investigate the role of thermal fluctuations as well as of the non-linear amplitude-phase coupling parameter and the amplitude relaxation rate to explain the linewidth broadening of in-plane precession modes induced in planar nanostructures. Experi… ▽ More Spin transfer driven excitations in magnetic nanostructures are characterized by a relatively large microwave emission linewidth (10 -100 MHz). Here we investigate the role of thermal fluctuations as well as of the non-linear amplitude-phase coupling parameter and the amplitude relaxation rate to explain the linewidth broadening of in-plane precession modes induced in planar nanostructures. Experiments on the linewidth broadening performed on MgO based magnetic tunnel junctions are compared to the linewidth obtained from macrospin simulations and from evaluation of the phase variance. In all cases we find that the linewidth varies linearly with temperature when the amplitude relaxation rate is of the same order as the linewidth and when the amplitude-phase coupling parameter is relatively small. The small amplitude-phase coupling parameter means that the linewidth is dominated by direct phase fluctuations and not by amplitude fluctuations, explaining thus its linear dependence as a function of temperature. △ Less

Submitted 13 December, 2011; originally announced December 2011.

Journal ref: Applied Physics Letters, 101 , 062407 (2012)

Dependence of nonlocal Gilbert damping on the ferromagnetic layer type in FM/Cu/Pt heterostructures

Authors: A. Ghosh, J. F. Sierra, S. Auffret, U. Ebels, W. E. Bailey

Abstract: We have measured the size effect in nonlocal Gilbert relaxation rate in FM(t$_{FM}$) / Cu (5nm) [/ Pt (2nm)] / Al(2nm) heterostructures, FM = \{ Ni$_{81}$Fe$_{19}$, Co$_{60}$Fe$_{20}$B$_{20}$, pure Co\}. Common behavior is observed for three FM layers, where the additional relaxation obeys both a strict inverse power law dependence $ΔG =K \:t^{n}$, $n=-\textrm{1.04}\pm\textrm{0.06}$ and a similar… ▽ More We have measured the size effect in nonlocal Gilbert relaxation rate in FM(t$_{FM}$) / Cu (5nm) [/ Pt (2nm)] / Al(2nm) heterostructures, FM = \{ Ni$_{81}$Fe$_{19}$, Co$_{60}$Fe$_{20}$B$_{20}$, pure Co\}. Common behavior is observed for three FM layers, where the additional relaxation obeys both a strict inverse power law dependence $ΔG =K \:t^{n}$, $n=-\textrm{1.04}\pm\textrm{0.06}$ and a similar magnitude $K=\textrm{224}\pm\textrm{40 Mhz}\cdot\textrm{nm}$. As the tested FM layers span an order of magnitude in spin diffusion length $λ_{SDL}$, the results are in support of spin diffusion, rather than nonlocal resistivity, as the origin of the effect. △ Less

Submitted 26 November, 2010; originally announced November 2010.

Journal ref: Applied Physics Letters 98 052508 (2011)

Precise probing spin wave mode frequencies in the vortex state of circular magnetic dots

Authors: A. A. Awad, K. Y. Guslienko, J. F. Sierra, G. N. Kakazei, V. Metlushko, F. G. Aliev

Abstract: We report on detailed broadband ferromagnetic resonance measurements of azimuthal and radial spin wave excitations in circular Permalloy dots in the vortex ground state. Dots with aspect ratio (Beta =height over radius) varied from 0.03 to 0.1 were explored. We found that for Beta exceeding approximately 0.05, variation of the spin wave eigenfrequencies with Beta deviates from the predicted depe… ▽ More We report on detailed broadband ferromagnetic resonance measurements of azimuthal and radial spin wave excitations in circular Permalloy dots in the vortex ground state. Dots with aspect ratio (Beta =height over radius) varied from 0.03 to 0.1 were explored. We found that for Beta exceeding approximately 0.05, variation of the spin wave eigenfrequencies with Beta deviates from the predicted dependence. The frequency splitting of two lowest azimuthal modes was observed. The experimentally observed dependence of the frequency splitting on beta was reasonably well described by dynamic splitting model accounting the spin-waves and, vortex gyrotropic mode interaction. △ Less

Submitted 20 January, 2010; originally announced January 2010.

Journal ref: Appl. Phys. Lett. 96, 012503 (2010)

Broadband Ferromagnetic Resonance Linewidth Measurement of Magnetic Tunnel Junction Multilayers

Authors: J. F. Sierra, F. G. Aliev, R. Heindl, S. E. Russek, W. H. Rippard

Abstract: The broadband ferromagnetic resonance (FMR) linewidth of the free layer of magnetic tunnel junctions is used as a simple diagnostic of the quality of the magnetic structure. The FMR linewidth increases near the field regions of free layer reversal and pinned layer reversal, and this increase correlates with an increase in magnetic hysteresis in unpatterned films, low frequency noise in patterned… ▽ More The broadband ferromagnetic resonance (FMR) linewidth of the free layer of magnetic tunnel junctions is used as a simple diagnostic of the quality of the magnetic structure. The FMR linewidth increases near the field regions of free layer reversal and pinned layer reversal, and this increase correlates with an increase in magnetic hysteresis in unpatterned films, low frequency noise in patterned devices, and previous observations of magnetic domain ripple by use of Lorentz microscopy. Postannealing changes the free layer FMR linewidth indicating that considerable magnetic disorder, originating in the exchange-biased pinned layer, is transferred to the free layer. △ Less

Submitted 27 January, 2009; originally announced January 2009.

Comments: 13 pages, 4 figures

Journal ref: Applied Phyics Letters 94, 012506 (2009)

Vortex dynamics in confined stratified conditions

Authors: Farkhad G. Aliev, Juan F. Sierra, Ahmad A. Awad, Gleb N. Kakazei, Dong-Soo Han, Sang-Koog Kim, Vitali Metlushko, Bojan Ilic, Konstantin Y. Guslienko

Abstract: We report on linear spin dynamics in the vortex state of the Permalloy dots subjected to stratified (magnetic) field. We demonstrate experimentally and by simulations the existence of two distinct dynamic regimes corresponding to the vortex stable and metastable states. Breaking cylindrical symmetry leads to unexpected eigenmodes frequency splitting in the stable state and appearance of new eige… ▽ More We report on linear spin dynamics in the vortex state of the Permalloy dots subjected to stratified (magnetic) field. We demonstrate experimentally and by simulations the existence of two distinct dynamic regimes corresponding to the vortex stable and metastable states. Breaking cylindrical symmetry leads to unexpected eigenmodes frequency splitting in the stable state and appearance of new eigenmodes in the metastable state above the vortex nucleation field. Dynamic response in the metastable state strongly depends on relative orientation of the external rf pumping and the bias magnetic fields. These findings may be relevant for different vortex states in confined and stratified conditions. △ Less

Submitted 29 December, 2008; originally announced December 2008.

Temperature dependent dynamic and static magnetic response in magnetic tunnel junctions with Permalloy layers

Authors: J. F. Sierra, V. V. Pryadun, F. G. Aliev, S. E. Russek, M. Garcia-Hernandez, E. Snoeck, V. Metlushko

Abstract: Ferromagnetic resonance and static magnetic properties of CoFe/Al2O3/CoFe/Py and CoFe/Al2O3/CoFeB/Py magnetic tunnel junctions and of 25nm thick single-layer Permalloy(Py) films have been studied as a function of temperature down to 2K. The temperature dependence of the ferromagnetic resonance excited in the Py layers in magnetic tunnel junctions shows knee-like enhancement of the resonance freq… ▽ More Ferromagnetic resonance and static magnetic properties of CoFe/Al2O3/CoFe/Py and CoFe/Al2O3/CoFeB/Py magnetic tunnel junctions and of 25nm thick single-layer Permalloy(Py) films have been studied as a function of temperature down to 2K. The temperature dependence of the ferromagnetic resonance excited in the Py layers in magnetic tunnel junctions shows knee-like enhancement of the resonance frequency accompanied by an anomaly in the magnetization near 60K. We attribute the anomalous static and dynamic magnetic response at low temperatures to interface stress induced magnetic reorientation transition at the Py interface which could be influenced by dipolar soft-hard layer coupling through the Al2O3 barrier. △ Less

Submitted 29 December, 2008; originally announced December 2008.

Journal ref: Appl. Phys. Lett. 93 (2008) 172510