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Large Bandgap Observed on the Surfaces of EuZn2As2 Single Crystals
Authors:
Dejia Kong,
Siavash Karbasizadeh,
Ganesh Narasimha,
Paras Regmi,
Chenggang Tao,
Sai Mu,
Rama Vasudevan,
Ian Harrison,
Rongying Jin,
Zheng Gai
Abstract:
EuM2As2 (M = Zn, Cd, In, Sn etc.) is an excellent material system for studying topological properties, which can be easily tuned by magnetism involved. Theoretical calculations predict gapped and flat bands in EuZn2As2 but gapless structure in EuCd2As2. In this work, low-temperature (77 K) cleaved EuZn2As2 crystals are studied using scanning tunneling microscopy/spectroscopy (STM/S) and density fu…
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EuM2As2 (M = Zn, Cd, In, Sn etc.) is an excellent material system for studying topological properties, which can be easily tuned by magnetism involved. Theoretical calculations predict gapped and flat bands in EuZn2As2 but gapless structure in EuCd2As2. In this work, low-temperature (77 K) cleaved EuZn2As2 crystals are studied using scanning tunneling microscopy/spectroscopy (STM/S) and density functional theory (DFT) calculations. Defects-induced local density of states (LDOS) modification with a triangular shape helps identify the surface terminations: Eu versus AsZn surface. While large bandgaps (~1.5 eV at 77 K) are observed on both pristine surfaces, the bandgap width is found to be very sensitive to local heterogeneity, such as defects and step edges, with the tendency of reduction. Combining experimental data with DFT simulations, we conclude that the modified bandgap in the heterogeneous area arises from Zn vacancies and/or substitution by As atoms. Our investigation offers important information for reevaluating the electron topology of the EuM2As2 family.
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Submitted 16 August, 2024;
originally announced August 2024.
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Impact of Ge, Ga, and Al doping on the mechanical properties and anisotropy of Cr$_3$Si: a first-principles investigation
Authors:
Siavash Karbasizadeh,
Mohammad Amirabbasi
Abstract:
The mechanical properties of cubic Cr$_3$Si doped with Ge, Ga, and Al are systematically investigated using first-principles calculations based on density functional theory. We examine the effects of doping on the lattice constants, formation enthalpies, elastic moduli, wave velocities, Debye temperature, and mechanical anisotropy to understand how these dopants influence the structural stability…
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The mechanical properties of cubic Cr$_3$Si doped with Ge, Ga, and Al are systematically investigated using first-principles calculations based on density functional theory. We examine the effects of doping on the lattice constants, formation enthalpies, elastic moduli, wave velocities, Debye temperature, and mechanical anisotropy to understand how these dopants influence the structural stability and mechanical behavior of Cr$_3$Si. Our results indicate that doping with Ge, Ga, and Al lead to an increase in lattice constants, reflecting lattice expansion. Despite the negative formation enthalpies across all doped configurations, indicating thermodynamic stability, higher dopant concentrations reduce the stability of the alloys. The elastic moduli, including bulk modulus, shear modulus, and Young's modulus, decrease with increasing dopant concentration, suggesting a reduction in mechanical stiffness and rigidity. Wave velocity and Debye temperature also grow smaller, further indicating a softer material structure with diminished thermal conductivity. Additionally, the study reveals that Al and Ga doping significantly increases mechanical anisotropy, as demonstrated by the anisotropy indices and three-dimensional contour analyses. In contrast, Ge maintains a more isotropic mechanical behavior, making it the most favorable dopant for applications requiring balanced mechanical and thermal properties. These findings provide critical insights into the design and optimization of Cr$_3$Si-based materials, highlighting the trade-offs between mechanical strength, anisotropy, and other functional properties introduced by doping. The results underscore the potential of tailoring Cr$_3$Si alloys for specific high-performance applications where directional mechanical properties and thermal stability are of paramount importance.
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Submitted 13 August, 2024;
originally announced August 2024.
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Vacancy-related color centers in twodimensional silicon carbide monolayers
Authors:
M. Mohseni,
I. Abdolhosseini Sarsari,
S. Karbasizadeh,
P. Udvarhelyi,
Q. Hassanzada,
T. Ala-Nissila,
A. Gali
Abstract:
Basic vacancy defects in twodimensional silicon carbide (2D-SiC) are examined by means of density functional theory calculations to explore their magneto-optical properties as well as their potential in quantum technologies. In particular, the characteristic hyperfine tensors and optical excited states of carbon-vacancy, silicon-vacancy, and carbon antisite-vacancy pair defects in 2D-SiC are deter…
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Basic vacancy defects in twodimensional silicon carbide (2D-SiC) are examined by means of density functional theory calculations to explore their magneto-optical properties as well as their potential in quantum technologies. In particular, the characteristic hyperfine tensors and optical excited states of carbon-vacancy, silicon-vacancy, and carbon antisite-vacancy pair defects in 2D-SiC are determined that are the key fingerprints of these defects that may be observed in electron paramagnetic resonance and photoluminescence experiments, respectively. Besides the fundamental characterization of the most basic native defects, we show that the negatively charged carbon antisite-vacancy defect is a promising candidate for realizing a near-infrared single-photon quantum emitter with spin doublet ground state, where the negative charge state may be provided by nitrogen doping of 2D-SiC. We find that the neutral carbon-vacancy with spin triplet ground state might be used for quantum sensing with a broad emission in the visible.
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Submitted 19 December, 2023; v1 submitted 18 August, 2022;
originally announced August 2022.
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Biphenylene monolayer as a two-dimensional nonbenzenoid carbon allotrope: A first-principles study
Authors:
A. Bafekry,
M. Faraji,
M. M. Fadlallah,
H. R. Jappor,
S. Karbasizadeh,
M. Ghergherehchi,
D. Gogova
Abstract:
In a very recent accomplishment, the two-dimensional form of Biphenylene network (BPN) has been successfully fabricated [Fan et al., Science, 372, 852-856 (2021)]. Motivated by this exciting experimental result on 2D layered BPN structure, herein we perform detailed density functional theory-based first-principles calculations, for the first time, in order to gain insight into the structural, elec…
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In a very recent accomplishment, the two-dimensional form of Biphenylene network (BPN) has been successfully fabricated [Fan et al., Science, 372, 852-856 (2021)]. Motivated by this exciting experimental result on 2D layered BPN structure, herein we perform detailed density functional theory-based first-principles calculations, for the first time, in order to gain insight into the structural, electronic and optical properties of this promising nanomaterial. Our theoretica results reveal the BPN structure is constructed from three rings of tetragon, hexagon and octagon, meanwhile the electron localization function shows very strong bonds between the C atoms in the structure. The dynamical stability of BPN is verified via the phonon band dispersion calculations. The mechanical properties reveal the brittle behavior of BPN monolayer. The Youngs modulus has been computed as 0.1 TPa, which is smaller than the corresponding value of graphene, while the Poissons ratio determined to be 0.26 is larger than that of graphene. The band structure is evaluated to show the electronic features of the material; determining the BPN monolayer as metallic with a band gap of zero. The optical properties (real and imaginary parts of the dielectric function, and the absorption spectrum) uncover BPN as an insulator along the zz direction, while owning metallic properties in xx and yy directions. We anticipate that our discoveries will pave the way to the successful implementation of this new 2D allotrope of carbon in advanced nanoelectronics.
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Submitted 31 May, 2021;
originally announced May 2021.
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Band-gap engineering, magnetic behavior and Dirac-semimetal character in the MoSi2N4 nanoribbon with armchair and zigzag edges
Authors:
A. Bafekry,
M. Faraji,
C. Stampfl,
I. Abdolhosseini Sarsari,
A. Abdollahzadeh Ziabari,
N. N. Hieu,
S. Karbasizadeh,
M. Ghergherehchi
Abstract:
Motivated by the recent successful formation of the MoSi2N4 monolayer [Hong et al., Sci. 369, 670 (2020)], the structural, electronic and magnetic properties of MoSi2N4 nanoribbons (NRs) is investigated for the first time . The band structure calculations showed spin-polarization in zigzag edges and a non-magnetic semiconducting character in armchair edges. For armchair-edges, we identify an indir…
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Motivated by the recent successful formation of the MoSi2N4 monolayer [Hong et al., Sci. 369, 670 (2020)], the structural, electronic and magnetic properties of MoSi2N4 nanoribbons (NRs) is investigated for the first time . The band structure calculations showed spin-polarization in zigzag edges and a non-magnetic semiconducting character in armchair edges. For armchair-edges, we identify an indirect to direct band gap shift compared to the MoSi2N4 monolayer, and its energy gap increases with increasing NR width. Anisotropic electrical and magnetic behavior is observed via band structure calculations in the zigzag and armchair edges, where, surprisingly, for the one type of zigzag-edges configuration, we identify a Dirac-semimetal character. The appearance of magnetism and Dirac-semimetal in MoSi2N4 ribbon can give rise to novel physical properties, which could be useful in applications for next-generation electronic devices.
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Submitted 21 May, 2021;
originally announced May 2021.
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Tunable Ohmic contact in graphene/HfS$_2$ van der Waals heterostructure
Authors:
S. Karbasizadeh,
F. Fanaeiparvar,
I. Abdolhosseini Sarsari
Abstract:
With the use of density functional theory calculations and addition of van der Waals correction, the graphene/HfS$_2$ heterojunction is constructed, and its electronic properties are examined thoroughly. This interface is determined as $n$-type Ohmic and the impacts of different amounts of interlayer distance and strain on the contact are shown using Schottky barrier height and electron injection…
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With the use of density functional theory calculations and addition of van der Waals correction, the graphene/HfS$_2$ heterojunction is constructed, and its electronic properties are examined thoroughly. This interface is determined as $n$-type Ohmic and the impacts of different amounts of interlayer distance and strain on the contact are shown using Schottky barrier height and electron injection efficiency. Dipole moment and workfunction of the interface are also altered when subjected to change in these two categories. The transition between Ohmic to Schottky contact is also depicted to be possible by applying a perpendicular electric field, proving this to be yet another useful method for tuning different properties of this structure. The conclusions given in this paper can exert an immense amount of influence on the development of two-dimensional HfS$_2$ based devices in the future.
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Submitted 8 November, 2020;
originally announced November 2020.
