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Transport Conductivity of Graphene at RF and Microwave Frequencies
Authors:
S. A. Awan,
A. Lombardo,
A. Colli,
G. Privitera,
T. Kulmala,
J. M. Kivioja,
M. Koshino,
A. C. Ferrari
Abstract:
We measure graphene coplanar waveguides from direct current (DC) to 13.5GHz and show that the apparent resistance (in the presence of parasitic impedances) has an quadratic frequency dependence, but the intrinsic conductivity (without the influence of parasitic impedances) is frequency-independent. Consequently, in our devices the real part of the complex alternating current conductivity is the sa…
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We measure graphene coplanar waveguides from direct current (DC) to 13.5GHz and show that the apparent resistance (in the presence of parasitic impedances) has an quadratic frequency dependence, but the intrinsic conductivity (without the influence of parasitic impedances) is frequency-independent. Consequently, in our devices the real part of the complex alternating current conductivity is the same as the DC value and the imaginary part~0. The graphene channel is modelled as a parallel resistive-capacitive network with a frequency dependence identical to that of the Drude conductivity with momentum relaxation time~2.1ps, highlighting the influence of alternating current (AC) electron transport on the electromagnetic properties of graphene. This can lead to optimized design of high-speed analogue field-effect transistors, mixers, frequency doublers, low-noise amplifiers and radiation detectors.
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Submitted 20 August, 2015;
originally announced August 2015.
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Ultrafast and widely tuneable vertical-external-cavity surface-emitting laser, mode-locked by a graphene-integrated distributed Bragg reflector
Authors:
C. A. Zaugg,
Z. Sun,
V. J. Wittwer,
D. Popa,
S. Milana,
T. Kulmala,
R. S. Sundaram,
M. Mangold,
O. D. Sieber,
M. Golling,
Y. Lee,
J. H. Ahn,
A. C. Ferrari,
U. Keller
Abstract:
We report a versatile and cost-effective way of controlling the unsaturated loss, modulation depth and saturation fluence of graphene-based saturable absorbers (GSAs), by changing the thickness of a spacer between SLG and a high-reflection mirror. This allows us to modulate the electric field intensity enhancement at the GSA from 0 up to 400%, due to the interference of incident and reflected ligh…
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We report a versatile and cost-effective way of controlling the unsaturated loss, modulation depth and saturation fluence of graphene-based saturable absorbers (GSAs), by changing the thickness of a spacer between SLG and a high-reflection mirror. This allows us to modulate the electric field intensity enhancement at the GSA from 0 up to 400%, due to the interference of incident and reflected light at the mirror. The unsaturated loss of the SLG-mirror-assembly can be reduced to$\sim$0. We use this to mode-lock a VECSEL from 935 to 981nm. This approach can be applied to integrate SLG into various optical components, such as output coupler mirrors, dispersive mirrors, dielectric coatings on gain materials. Conversely, it can also be used to increase absorption (up to 10%) in various graphene based photonics and optoelectronics devices, such as photodetectors.
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Submitted 8 October, 2013;
originally announced October 2013.
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2μm Solid-State Laser Mode-locked By Single-Layer Graphene
Authors:
A. A. Lagatsky,
Z. Sun,
T. S. Kulmala,
R. S. Sundaram,
S. Milana,
F. Torrisi,
O. L. Antipov,
Y. Lee,
J. H. Ahn,
C. T. A. Brown,
W. Sibbett,
A. C. Ferrari
Abstract:
We report a 2μm ultrafast solid-state Tm:Lu2O3 laser, mode-locked by single-layer graphene, generating transform-limited~410fs pulses, with a spectral width~11.1nm at 2067nm. The maximum average output power is 270mW, at a pulse repetition frequency of 110MHz. This is a convenient high-power transform-limited laser at 2μm for various applications, such as laser surgery and material processing.
We report a 2μm ultrafast solid-state Tm:Lu2O3 laser, mode-locked by single-layer graphene, generating transform-limited~410fs pulses, with a spectral width~11.1nm at 2067nm. The maximum average output power is 270mW, at a pulse repetition frequency of 110MHz. This is a convenient high-power transform-limited laser at 2μm for various applications, such as laser surgery and material processing.
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Submitted 25 October, 2012;
originally announced October 2012.
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Ink-Jet Printed Graphene Electronics
Authors:
F. Torrisi,
T. Hasan,
W. Wu,
Z. Sun,
A. Lombardo,
T. Kulmala,
G. W. Hshieh,
S. J. Jung,
F. Bonaccorso,
P. J. Paul,
D. P. Chu,
A. C. Ferrari
Abstract:
We demonstrate ink-jet printing as a viable method for large area fabrication of graphene devices. We produce a graphene-based ink by liquid phase exfoliation of graphite in N-Methylpyrrolidone. We use it to print thin-film transistors, with mobilities up to~95cm^2V^(-1)s(-1), as well as transparent and conductive patterns, with~80 % transmittance and~30kOhm/sq sheet resistance. This paves the way…
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We demonstrate ink-jet printing as a viable method for large area fabrication of graphene devices. We produce a graphene-based ink by liquid phase exfoliation of graphite in N-Methylpyrrolidone. We use it to print thin-film transistors, with mobilities up to~95cm^2V^(-1)s(-1), as well as transparent and conductive patterns, with~80 % transmittance and~30kOhm/sq sheet resistance. This paves the way to all-printed, flexible and transparent graphene devices on arbitrary substrates
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Submitted 21 November, 2011;
originally announced November 2011.
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Quantifying defects in graphene via Raman spectroscopy at different excitation energies
Authors:
L. G. Cançado,
A. Jorio,
E. H. Martins Ferreira,
F. Stavale,
C. A. Achete,
R. B. Capaz,
M. V. O. Moutinho,
A. Lombardo,
T. Kulmala,
A. C. Ferrari
Abstract:
We present a Raman study of Ar(+)-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities for a given defect density strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in g…
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We present a Raman study of Ar(+)-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities for a given defect density strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in graphene via Raman spectroscopy for any visible excitation energy. We note that, for all excitations, the D to G intensity ratio reaches a maximum for an inter-defect distance ~3nm. Thus, a given ratio could correspond to two different defect densities, above or below the maximum. The analysis of the G peak width and its dispersion with excitation energy solves this ambiguity.
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Submitted 3 May, 2011; v1 submitted 1 May, 2011;
originally announced May 2011.
