Showing 1–50 of 126 results for author: Lake, K

Evolution of Berry Phase and Half-Metallicity in Cr$_2$Te$_3$ in Response to Strain, Filling, Thickness, and Surface Termination

Authors: Sohee Kwon, Yuhang Liu, Hang Chi, Gen Yin, Mahesh R. Neupane, Roger K. Lake

Abstract: Cr$_2$Te$_3$ is a ferromagnetic, quasi-two-dimensional layered material with perpendicular magnetic anisotropy, strong spin-orbit coupling, and non-trivial band topology. The non-trivial topology results in an intrinsic anomalous Hall conductivity (AHC) that switches sign under filling and biaxial strain. Thin films can exhibit half metallicity. Using density functional theory combined with maxima… ▽ More Cr$_2$Te$_3$ is a ferromagnetic, quasi-two-dimensional layered material with perpendicular magnetic anisotropy, strong spin-orbit coupling, and non-trivial band topology. The non-trivial topology results in an intrinsic anomalous Hall conductivity (AHC) that switches sign under filling and biaxial strain. Thin films can exhibit half metallicity. Using density functional theory combined with maximally localized Wannier functions, we reveal the physical origins of the sensitivity of the sign of the AHC to strain and filling, and we determine the effect of surface termination on the half metallicity. We find that thin films terminated on the Te layers are the most energetically stable, but only the thin films terminated on both sides with the partially occupied Cr layers are half metals. In bulk Cr$_2$Te$_3$, the sensitivity of the sign of the AHC to strain and filling results from the complex Fermi surface comprised of three bands. Filling of local minima and bands near anti-crossings alters the local Berry curvature consistent with the negative to positive switching of the AHC. Similarly, strain depopulates a local minimum, shifts a degenerate point closer to the Fermi energy, and causes two spin-orbit split bands to reverse their order. These findings provide a physical understanding of the evolution of the Berry phase, AHC, and half-metallicity in Cr$_2$Te$_3$. △ Less

Submitted 2 April, 2024; originally announced April 2024.

Comments: 14 pages, 11 figures

Constructing maximal extensions of the Vaidya metric in Israel coordinates: II. The completeness of Israel coordinates

Authors: Sheref Nasereldin, Kayll Lake

Abstract: We present the results of an analysis of three maximal extensions of the Vaidya metric in Israel coordinates, a spherically symmetric solution to the Einstein field equations for the energy momentum tensor of pure radiation in the high-frequency approximation. This metric is necessary for various applications, such as describing the exterior geometry of a radiating star in astrophysics and studyin… ▽ More We present the results of an analysis of three maximal extensions of the Vaidya metric in Israel coordinates, a spherically symmetric solution to the Einstein field equations for the energy momentum tensor of pure radiation in the high-frequency approximation. This metric is necessary for various applications, such as describing the exterior geometry of a radiating star in astrophysics and studying possible formation of naked singularities in the geometry of spacetime. Contrary to the common Eddington-Finkelstein-like (EFL) coordinates, these maximal extensions, in Israel coordinates, are complete and cover the entirety of the Vaidya manifold. We develop three mass functions, one for each extension, and consider the qualitative characteristics of the three mass models and the surfaces of constant (dynamical) radius. We demonstrate that each maximal extension is null geodesically complete, which we assess by solving the radial null geodesics equation and forming the Penrose conformal diagram for each extension. △ Less

Submitted 28 December, 2023; v1 submitted 10 December, 2023; originally announced December 2023.

Comments: 17 pages, 57 figures

Phonon States in NbTe$_4$ and TaTe$_4$ Quasi-One-Dimensional van der Waals Crystals

Authors: Zahra Ebrahim Nataj, Fariborz Kargar, Sergiy Krylyuk, Topojit Debnath, Maedeh Taheri, Subhajit Ghosh, Huairuo Zhang, Albert V. Davydov, Roger K. Lake, Alexander A. Balandin

Abstract: We report the results of polarization-dependent Raman spectroscopy of phonon states in single-crystalline quasi-one-dimensional NbTe$_4$ and TaTe$_4$ van der Waals materials. The measurements were conducted in the wide temperature range from 80 K to 560 K. Our results show that although both materials have identical crystal structures and symmetries, there is a drastic difference in the intensity… ▽ More We report the results of polarization-dependent Raman spectroscopy of phonon states in single-crystalline quasi-one-dimensional NbTe$_4$ and TaTe$_4$ van der Waals materials. The measurements were conducted in the wide temperature range from 80 K to 560 K. Our results show that although both materials have identical crystal structures and symmetries, there is a drastic difference in the intensity of their Raman spectra. While TaTe4 exhibits well-defined peaks through the examined frequency and temperature ranges, NbTe4 reveals extremely weak Raman signatures. The measured spectral positions of the phonon peaks agree with the phonon band structure calculated using the density-functional theory. We offer possible reasons for the in-tensity differences between the two van der Waals materials. Our results provide insights into the phonon properties of NbTe$_4$ and TaTe$_4$ van der Waals materials and indicate the potential of Raman spectroscopy for studying charge-density-wave quantum condensate phases. △ Less

Submitted 5 November, 2023; originally announced November 2023.

Comments: 24 pages; 6 figures; 1 table

Conductance Fluctuations and Domain Depinning in Quasi-2D Charge-Density-Wave 1T-TaS$_2$ Thin Films

Authors: Jonas O. Brown, Maedeh Taheri, Fariborz Kargar, Ruben Salgado, Tekwam Geremew, Sergey Rumyantsev, Roger K. Lake, Alexander A. Balandin

Abstract: We investigated the temperature dependence of the conductance fluctuations in thin films of the quasi-two-dimensional 1T-TaS$_2$ van der Waals material. The conductance fluctuations, determined from the derivative current-voltage characteristics of two-terminal 1T-TaS$_2$ devices, appear prominently at the electric fields that correspond to the transitions between various charge-density-wave macro… ▽ More We investigated the temperature dependence of the conductance fluctuations in thin films of the quasi-two-dimensional 1T-TaS$_2$ van der Waals material. The conductance fluctuations, determined from the derivative current-voltage characteristics of two-terminal 1T-TaS$_2$ devices, appear prominently at the electric fields that correspond to the transitions between various charge-density-wave macroscopic quantum condensate phases and at the onset of the depinning of the charge density wave domains. The depinning threshold field, $E_D$, monotonically increases with decreasing temperature within the nearly commensurate charge-density-wave phase. The $E_D$ value increases with the decreasing 1T-TaS$_2$ film thickness, revealing the surface pinning of the charge density waves. Our analysis suggests that depinning is absent in the commensurate phase. It is induced by the electric field but facilitated by local heating. The measured trends for $E_D$ of the domain depinning are important for understanding the physics of charge density waves in quasi-two-dimensional crystals and for developing electronic devices based on this type of quantum materials. △ Less

Submitted 16 July, 2023; originally announced July 2023.

Comments: 25 pages; 7 figures

Constructing Maximal Extensions of the Vaidya Metric in Israel Coordinates: I. Integration of the Field Equations

Authors: Sheref Nasereldin, Kayll Lake

Abstract: This paper explores a complete representation of the Vaidya model, a radial flux of radiation in the eikonal approximation, used for modeling various phenomena in both classical and semi-classical General Relativity and Astrophysics. The majority of the applications of the Vaidya model have been formulated in an incomplete representation. A complete representation is obtained here by direct integr… ▽ More This paper explores a complete representation of the Vaidya model, a radial flux of radiation in the eikonal approximation, used for modeling various phenomena in both classical and semi-classical General Relativity and Astrophysics. The majority of the applications of the Vaidya model have been formulated in an incomplete representation. A complete representation is obtained here by direct integration of the Einstein field equations. We present the methodology to obtain this complete representation, and its utility in the modeling of general relativistic phenomena. △ Less

Submitted 26 December, 2023; v1 submitted 9 July, 2023; originally announced July 2023.

Comments: 8 pages, 1 figure, 2 tables

Spin scattering and Hall effects in monolayer Fe3GeTe2

Authors: Luyan Yu, Jie-Xiang Yu, Jiadong Zang, Roger K. Lake, Houlong Zhuang, Gen Yin

Abstract: We theoretically show that the carrier transport in monolayer Fe3GeTe2 experiences a transition between anomalous Hall effect and spin Hall effect when the spin polarization of disorders switches between out-of-plane and in-plane. These Hall effects are allowed when the magnetization is polarized in-plane, breaking the C3 rotation symmetry. The transition originates from the selection rule of spin… ▽ More We theoretically show that the carrier transport in monolayer Fe3GeTe2 experiences a transition between anomalous Hall effect and spin Hall effect when the spin polarization of disorders switches between out-of-plane and in-plane. These Hall effects are allowed when the magnetization is polarized in-plane, breaking the C3 rotation symmetry. The transition originates from the selection rule of spin scattering, the strong spin-orbit coupling, and the van Hove singularities near the Fermi surface. The scattering selection rule tolerates the sign change of the disorder spin, which provides a convenient method to detect the switching of antiferromagnetic insulators regardless of the interfacial roughness in a heterostructure. This provides a convenient platform for the study of 2D spintronics through various van-der-Waals heterostructures. △ Less

Submitted 16 May, 2023; originally announced May 2023.

Structural, electronic, and magnetic properties of CrTe2

Authors: Yuhang Liu, Sohee Kwon, George J. de Coster, Roger K. Lake, Mahesh R. Neupane

Abstract: Two-dimensional chromium ditelluride (CrTe2) is a promising ferromagnetic layered material that exhibits long-range ferromagnetic ordering in the monolayer limit. The formation energies of the different possible structural phases (1T, 1H, 2H) calculated from density functional theory (DFT) show that the 1T phase is the ground state, and the energetic transition barriers between the phases, calcula… ▽ More Two-dimensional chromium ditelluride (CrTe2) is a promising ferromagnetic layered material that exhibits long-range ferromagnetic ordering in the monolayer limit. The formation energies of the different possible structural phases (1T, 1H, 2H) calculated from density functional theory (DFT) show that the 1T phase is the ground state, and the energetic transition barriers between the phases, calculated by the nudged elastic band method, are large, on the order of 0.5 eV. The self-consistent Hubbard $U$ correction parameters are calculated for all the phases of CrTe$_2$. The calculated magnetic moment of 1T-CrTe$_2$ with $\geq 2$ layers lies in the plane, whereas the magnetic moment of a monolayer is out-of-plane. Band filling and tensile bi-axial strain cause the magnetic moment of a monolayer to switch from out-of-plane to in-plane, and compressive bi-axial strain in a bilayer causes the magnetic moment to switch from in-plane to out-of-plane. The magnetic anisotropy is shown to originate from the large spin orbit coupling (SOC) of the Te atoms and the anisotropy of the exchange coupling constants $J_{xy}$ and $J_z$ in an XXZ type Hamiltonian. Renormalized spin wave theory using experimental values for the magnetic anisotropy energy and Curie temperatures provides a range of values for the nearest neighbor exchange coupling. △ Less

Submitted 29 April, 2023; originally announced May 2023.

Journal ref: Physical Review MATERIALS 6, 084004 (2022)

Israel coordinates for all static spherically symmetric spacetimes with vanishing second Ricci invariant

Authors: Yannick M. Bisson, Kayll Lake

Abstract: Static spherically symmetric spacetimes with vanishing second Ricci invariant constitute an important class of solutions to Einstein's equations and more generally as archetypes of regular black holes. When studying completeness one is most often presented with the Kruskal - Szekeres procedure. However, this procedure only works if the spacetime admits a single non-degenerate Killing horizon (a si… ▽ More Static spherically symmetric spacetimes with vanishing second Ricci invariant constitute an important class of solutions to Einstein's equations and more generally as archetypes of regular black holes. When studying completeness one is most often presented with the Kruskal - Szekeres procedure. However, this procedure only works if the spacetime admits a single non-degenerate Killing horizon (a single bifurcation two-sphere). Here we generalize the Israel procedure to examine a constructive approach to completeness based entirely on the static spherically symmetric nature of spacetimes with a vanishing second Ricci invariant. It is shown by "block gluing" that the Israel procedure can cover two bifurcation two-spheres, but can fail with three. No coordinate transformations are used in this work. △ Less

Submitted 17 October, 2023; v1 submitted 10 February, 2023; originally announced February 2023.

Comments: Final form to appear in Physical Review D

Journal ref: Phys. Rev. D 108, 104017 (2023)

Structural tuning magnetism and topology in a magnetic topological insulator

Authors: Christopher Eckberg, Gang Qiu, Tao Qu, Sohee Kwon, Yuhang Liu, Lixuan Tai, David Graf, Su Kong Chong, Peng Zhang, Kin L. Wong, Roger K. Lake, Mahesh R. Neupane, Kang L. Wang

Abstract: To date, the most widely-studied quantum anomalous Hall insulator (QAHI) platform is achieved by dilute doping of magnetic ions into thin films of the alloyed tetradymite topological insulator (TI) (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ (BST). In these films, long-range magnetic ordering of the transition metal substituants opens an exchange gap $Δ$ in the topological surface states, stabilizing spin-polari… ▽ More To date, the most widely-studied quantum anomalous Hall insulator (QAHI) platform is achieved by dilute doping of magnetic ions into thin films of the alloyed tetradymite topological insulator (TI) (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ (BST). In these films, long-range magnetic ordering of the transition metal substituants opens an exchange gap $Δ$ in the topological surface states, stabilizing spin-polarized, dissipationless edge channels with a nonzero Chern number $\mathcal{C}$. The long-range ordering of the spatially separated magnetic ions is itself mediated by electronic states in the host TI, leading to a sophisticated feedback between magnetic and electronic properties. Here we present a study of the electronic and magnetic response of a BST-based QAHI system to structural tuning via hydrostatic pressure. We identify a systematic closure of the topological gap under compressive strain accompanied by a simultaneous enhancement in the magnetic ordering strength. Combining these experimental results with first-principle calculations we identify structural deformation as a strong tuning parameter to traverse a rich topological phase space and modify magnetism in the magnetically doped BST system. △ Less

Submitted 8 January, 2023; originally announced January 2023.

Comments: 15 pages, 5 figures

Specifics of the Elemental Excitations in "True One-Dimensional" MoI$_3$ van der Waals Nanowires

Authors: Fariborz Kargar, Zahra Barani, Nicholas R. Sesing, Thuc T. Mai, Topojit Debnath, Huairuo Zhang, Yuhang Liu, Yanbing Zhu, Subhajit Ghosh, Adam J. Biacchi, Felipe H. da Jornada, Ludwig Bartels, Tehseen Adel, Angela R. Hight Walker, Albert V. Davydov, Tina T. Salguero, Roger K. Lake, Alexander A. Balandin

Abstract: We report on the temperature evolution of the polarization-dependent Raman spectrum of exfoliated MoI$_3$, a van der Waals material with a "true one-dimensional" crystal structure that can be exfoliated to individual atomic chains. The temperature evolution of several Raman features reveals anomalous behavior suggesting a phase transition of a magnetic origin. Theoretical considerations indicate t… ▽ More We report on the temperature evolution of the polarization-dependent Raman spectrum of exfoliated MoI$_3$, a van der Waals material with a "true one-dimensional" crystal structure that can be exfoliated to individual atomic chains. The temperature evolution of several Raman features reveals anomalous behavior suggesting a phase transition of a magnetic origin. Theoretical considerations indicate that MoI$_3$ is an easy-plane antiferromagnet with alternating spins along the dimerized chains and with inter-chain helical spin ordering. The calculated frequencies of the phonons and magnons are consistent with the interpretation of the experimental Raman data. The obtained results shed light on the specifics of the phononic and magnonic states in MoI$_3$ and provide a strong motivation for future study of this unique material with potential for spintronic device applications. △ Less

Submitted 10 October, 2022; originally announced October 2022.

Comments: 28 pages

Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride

Authors: Hang Chi, Yunbo Ou, Tim B. Eldred, Wenpei Gao, Sohee Kwon, Joseph Murray, Michael Dreyer, Robert E. Butera, Alexandre C. Foucher, Haile Ambaye, Jong Keum, Alice T. Greenberg, Yuhang Liu, Mahesh R. Neupane, George J. de Coster, Owen A. Vail, Patrick J. Taylor, Patrick A. Folkes, Charles Rong, Gen Yin, Roger K. Lake, Frances M. Ross, Valeria Lauter, Don Heiman, Jagadeesh S. Moodera

Abstract: Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magnetism. Here we show that the anomalous Hall effect in pristine Cr2Te3 thin films manifests a unique temperature-dependent sign reversal at nonzero magnetization, resulting from the momentum-space Berry curvature as establ… ▽ More Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magnetism. Here we show that the anomalous Hall effect in pristine Cr2Te3 thin films manifests a unique temperature-dependent sign reversal at nonzero magnetization, resulting from the momentum-space Berry curvature as established by first-principles simulations. The sign change is strain tunable, enabled by the sharp and well-defined substrate/film interface in the quasi-two-dimensional Cr2Te3 epitaxial films, revealed by scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. This Berry phase effect further introduces hump-shaped Hall peaks in pristine Cr2Te3 near the coercive field during the magnetization switching process, owing to the presence of strain-modulated magnetic domains. The versatile interface tunability of Berry curvature in Cr2Te3 thin films offers new opportunities for topological electronics. △ Less

Submitted 9 December, 2022; v1 submitted 5 July, 2022; originally announced July 2022.

Comments: Main: 9 pages, 5 figures; SI: 5 pages, 9 figures

Journal ref: Nature Communications 14, 3222 (2023)

Tuning Spin Transport in a Graphene Antiferromagnetic Insulator

Authors: Petr Stepanov, Dmitry L. Shcherbakov, Shi Che, Marc W. Bockrath, Yafis Barlas, Dmitry Smirnov, Kenji Watanabe, Takashi Taniguchi, Roger K. Lake, Chun Ning Lau

Abstract: Long-distance spin transport through anti-ferromagnetic insulators (AFMIs) is a long-standing goal of spintronics research. Unlike conventional spintronics systems, monolayer graphene in quantum Hall regime (QH) offers an unprecedented tuneability of spin-polarization and charge carrier density in QH edge states. Here, using gate-controlled QH edges as spin-dependent injectors and detectors in an… ▽ More Long-distance spin transport through anti-ferromagnetic insulators (AFMIs) is a long-standing goal of spintronics research. Unlike conventional spintronics systems, monolayer graphene in quantum Hall regime (QH) offers an unprecedented tuneability of spin-polarization and charge carrier density in QH edge states. Here, using gate-controlled QH edges as spin-dependent injectors and detectors in an all-graphene electrical circuit, for the first time we demonstrate a selective tuning of ambipolar spin transport through graphene $ν$=0 AFMIs. By modulating polarities of the excitation bias, magnetic fields, and charge carriers that host opposite chiralities, we show that the difference between spin chemical potentials of adjacent edge channels in the spin-injector region is crucial in tuning spin-transport observed across graphene AFMI. We demonstrate that non-local response vanishes upon reversing directions of the co-propagating edge channels when the spin-filters in our devices are no longer selective for a particular spin-polarization. Our results establish a versatile set of methods to tune pure spin transport via an anti-ferromagnetic media and open a pathway to explore their applications for a broad field of antiferromagnetic spintronics research. △ Less

Submitted 25 May, 2022; originally announced May 2022.

Journal ref: Phys. Rev. Applied 18, 014031, 2022

One-Dimensional van der Waals Quantum Materials -- State of the Art and Perspectives

Authors: Alexander A. Balandin, Fariborz Kargar, Tina T. Salguero, Roger K. Lake

Abstract: The advent of graphene and other two-dimensional van der Waals materials, with their unique electrical, optical, and thermal properties, has resulted in tremendous progress for fundamental science. Recent developments suggest that taking one more step down in dimensionality - from monolayer, atomic sheets to individual atomic chains - can bring exciting prospects as the ultimate limit in material… ▽ More The advent of graphene and other two-dimensional van der Waals materials, with their unique electrical, optical, and thermal properties, has resulted in tremendous progress for fundamental science. Recent developments suggest that taking one more step down in dimensionality - from monolayer, atomic sheets to individual atomic chains - can bring exciting prospects as the ultimate limit in material downscaling is reached while establishing an entirely new field of one-dimensional quantum materials. Here we review this emerging area of one-dimensional van der Waals quantum materials and anticipate its future directions. We focus on quantum effects associated with the charge-density-wave condensate, strongly-correlated phenomena, topological phases, and other unique physical characteristics, which are attainable specifically in van der Waals materials of lower dimensionality. Possibilities for engineering the properties of quasi-one-dimensional materials via compositional changes, vacancies, and defects, as well as the prospects of their applications in composites are also discussed. △ Less

Submitted 26 February, 2022; originally announced February 2022.

Comments: 52 pages; 10 figures

Journal ref: Materials Today, 55, 74-91 (2022)

Discrete Quantum Geometry and Intrinsic Spin Hall Effect

Authors: Jie-Xiang Yu, Jiadong Zang, Roger K. Lake, Yi Zhang, Gen Yin

Abstract: We show that the quantum geometry of the Fermi surface can be numerically described by a 3-dimensional discrete quantum manifold. This approach not only avoids singularities in the Fermi sea, but it also enables the precise computation of the intrinsic Hall conductivity resolved in spin, as well as any other local properties of the Fermi surface. The method assures numerical accuracy when the Ferm… ▽ More We show that the quantum geometry of the Fermi surface can be numerically described by a 3-dimensional discrete quantum manifold. This approach not only avoids singularities in the Fermi sea, but it also enables the precise computation of the intrinsic Hall conductivity resolved in spin, as well as any other local properties of the Fermi surface. The method assures numerical accuracy when the Fermi level is arbitrarily close to singularities, and it remains robust when Kramers degeneracy is protected by symmetry. The approach is demonstrated by calculating the anomalous Hall and spin Hall conductivities of a 2-band lattice model of a Weyl semimetal and a full-band ab-initio model of zincblende GaAs. △ Less

Submitted 11 November, 2021; v1 submitted 16 June, 2021; originally announced June 2021.

Magnetic Properties of NbSi2N4, VSi2N4, and VSi2P4 Monolayers

Authors: Md. Rakibul Karim Akanda, Roger K Lake

Abstract: The recent demonstration of MoSi2N4 and its exceptional stability to air, water, acid, and heat has generated intense interest in this family of two-dimensional (2D) materials. Among these materials, NbSi2N4, VSi2N4, and VSi2P4 are semiconducting, easy-plane ferromagnets with negligible in-plane magnetic anisotropy. They thus satisfy a necessary condition for exhibiting a dissipationless spin supe… ▽ More The recent demonstration of MoSi2N4 and its exceptional stability to air, water, acid, and heat has generated intense interest in this family of two-dimensional (2D) materials. Among these materials, NbSi2N4, VSi2N4, and VSi2P4 are semiconducting, easy-plane ferromagnets with negligible in-plane magnetic anisotropy. They thus satisfy a necessary condition for exhibiting a dissipationless spin superfluid mode. The Curie temperatures of monolayer VSi2P4 and VSi2N4 are determined to be above room temperature based on Monte Carlo and density functional theory calculations. The magnetic moments of VSi2N4 can be switched from in-plane to out-of-plane by applying tensile biaxial strain or electron doping. △ Less

Submitted 1 August, 2021; v1 submitted 5 May, 2021; originally announced May 2021.

Depinning of the Charge-Density Waves in Quasi-2D 1T-TaS2 Devices Operating at Room Temperature

Authors: A. Mohammadzadeh, A. Rehman, F. Kargar, S. Rumyantsev, J. M. Smulko, W. Knap, R. K. Lake, A. A. Balandin

Abstract: We report on depinning of nearly-commensurate charge-density waves in 1T-TaS2 thin-films at room temperature. A combination of the differential current-voltage measurements with the low-frequency noise spectroscopy provide unambiguous means for detecting the depinning threshold field in quasi-2D materials. The depinning process in 1T-TaS2 is not accompanied by an observable abrupt increase in elec… ▽ More We report on depinning of nearly-commensurate charge-density waves in 1T-TaS2 thin-films at room temperature. A combination of the differential current-voltage measurements with the low-frequency noise spectroscopy provide unambiguous means for detecting the depinning threshold field in quasi-2D materials. The depinning process in 1T-TaS2 is not accompanied by an observable abrupt increase in electric current - in striking contrast to depinning in the conventional charge-density-wave materials with quasi-1D crystal structure. We explained it by the fact that the current density from the charge-density waves in the 1T-TaS2 devices is orders of magnitude smaller than the current density of the free carriers available in the discommensuration network surrounding the commensurate charge-density-wave islands. The depinning fields in 1T-TaS2 thin-film devices are several orders of magnitude larger than those in quasi-1D van der Waals materials. Obtained results are important for the proposed applications of the charge-density-wave devices in electronics. △ Less

Submitted 28 April, 2021; originally announced April 2021.

Comments: 19 pages, 4 figures

Stacking enabled strong coupling of atomic motion to interlayer excitons in van der Waals heterojunction photodiodes

Authors: Fatemeh Barati, Trevor B. Arp, Shanshan Su, Roger K. Lake, Vivek Aji, Rienk van Grondelle, Mark S. Rudner, Justin C. W. Song, Nathaniel M. Gabor

Abstract: We reveal stacking-induced strong coupling between atomic motion and interlayer excitons through photocurrent measurements of WSe$_2$/MoSe$_2$ heterojunction photodiodes. Strong coupling manifests as pronounced periodic sidebands in the photocurrent spectrum in frequency windows close to the interlayer exciton resonances. The sidebands, which repeat over large swathes of the interlayer exciton pho… ▽ More We reveal stacking-induced strong coupling between atomic motion and interlayer excitons through photocurrent measurements of WSe$_2$/MoSe$_2$ heterojunction photodiodes. Strong coupling manifests as pronounced periodic sidebands in the photocurrent spectrum in frequency windows close to the interlayer exciton resonances. The sidebands, which repeat over large swathes of the interlayer exciton photocurrent spectrum, occur in energy increments corresponding directly to a prominent vibrational mode of the heterojunction. Such periodic patterns, together with interlayer photoconductance oscillations, vividly demonstrate the emergence of extraordinarily strong exciton-phonon coupling - and its impact on interlayer excitations - in stack-engineered van der Waals heterostructure devices. Our results establish photocurrent spectroscopy as a powerful tool for interrogating vibrational coupling to interlayer excitons and suggest an emerging strategy to control vibronic physics in the solid-state. △ Less

Submitted 21 December, 2020; originally announced December 2020.

Thermal conductivity of the quasi-1D materials TaSe3 and ZrTe3

Authors: Topojit Debnath, Bishwajit Debnath, Roger K. Lake

Abstract: The high breakdown current densities and resilience to scaling of the metallic transition metal trichalcogenides TaSe3 and ZrTe3 make them of interest for possible interconnect applications, and it motivates this study of their thermal conductivities and phonon properties. These crystals consist of planes of strongly bonded one-dimensional chains more weakly bonded to neighboring chains. Phonon di… ▽ More The high breakdown current densities and resilience to scaling of the metallic transition metal trichalcogenides TaSe3 and ZrTe3 make them of interest for possible interconnect applications, and it motivates this study of their thermal conductivities and phonon properties. These crystals consist of planes of strongly bonded one-dimensional chains more weakly bonded to neighboring chains. Phonon dispersions and the thermal conductivity tensors are calculated using density functional theory combined with an iterative solution of the phonon Boltzmann transport equation. The phonon velocities and the thermal conductivities of TaSe3 are considerably more anisotropic than those of ZrTe3. The maximum LA velocity in ZrTe3 occurs in the cross-chain direction, and this is consistent with the strong cross-chain bonding that gives rise to large Fermi velocities in that direction. The thermal conductivities are similar to those of other metallic two-dimensional transition metal dichalcogenides. At room temperature, a significant portion of the heat is carried by the optical modes. In the low frequency range, the phonon lifetimes and mean free paths in TaSe3 are considerably shorter than those in ZrTe3. The shorter lifetimes in TaSe3 are consistent with the presence of lower frequency optical branches and zone-folding features in the acoustic branches that arise due to the doubling of the TaSe3 unit cell within the plane. △ Less

Submitted 5 April, 2021; v1 submitted 16 October, 2020; originally announced October 2020.

Comments: 15 pages, 9 figures, 6 tables

Journal ref: Phys. Rev. Materials 5, 034010 (2021)

Interfacial Dzyaloshinskii-Moriya Interaction of Antiferromagnetic Materials

Authors: Md. Rakibul Karim Akanda, In Jun Park, Roger K. Lake

Abstract: The interface between a ferromagnet (FM) or antiferromagnet (AFM) and a heavy metal (HM) results in an antisymmetric exchange interaction known as the interfacial Dzyaloshinskii-Moriya interaction (iDMI) which favors non-collinear spin configurations. The iDMI is responsible for stabilizing noncollinear spin textures such as skyrmions in materials with bulk inversion symmetry. Interfacial DMI valu… ▽ More The interface between a ferromagnet (FM) or antiferromagnet (AFM) and a heavy metal (HM) results in an antisymmetric exchange interaction known as the interfacial Dzyaloshinskii-Moriya interaction (iDMI) which favors non-collinear spin configurations. The iDMI is responsible for stabilizing noncollinear spin textures such as skyrmions in materials with bulk inversion symmetry. Interfacial DMI values have been previously determined theoretically and experimentally for FM/HM interfaces, and, in this work, values are calculated for the metallic AFM MnPt and the insulating AFM NiO. The heavy metals considered are W, Re, and Au. The effects of the AFM and HM thicknesses are determined. The iDMI values of the MnPt heterolayers are comparable to those of the common FM materials, and those of NiO are lower. △ Less

Submitted 22 July, 2020; originally announced July 2020.

Journal ref: Phys. Rev. B 102, 224414 (2020)

Effects of filling, strain, and electric field on the Néel vector in antiferromagnetic CrSb

Authors: In Jun Park, Sohee Kwon, Roger K. Lake

Abstract: CrSb is a layered antiferromagnet (AFM) with perpendicular magnetic anisotropy, a high Néel temperature, and large spin-orbit coupling (SOC), which makes it interesting for AFM spintronic applications. To elucidate the various mechanisms of Néel vector control, the effects of strain, band filling, and electric field on the magnetic anisotropy energy (MAE) of bulk and thin-film CrSb are determined… ▽ More CrSb is a layered antiferromagnet (AFM) with perpendicular magnetic anisotropy, a high Néel temperature, and large spin-orbit coupling (SOC), which makes it interesting for AFM spintronic applications. To elucidate the various mechanisms of Néel vector control, the effects of strain, band filling, and electric field on the magnetic anisotropy energy (MAE) of bulk and thin-film CrSb are determined and analysed using density functional theory. The MAE of the bulk crystal is large (1.2 meV per unit cell). Due to the significant ionic nature of the Cr-Sb bond, finite slabs are strongly affected by end termination. Truncation of the bulk crystal to a thin film with one surface terminated with Cr and the other surface terminated with Sb breaks inversion symmetry, creates a large charge dipole and average electric field across the film, and breaks spin degeneracy, such that the thin film becomes a ferrimagnet. The MAE is reduced such that its sign can be switched with realistic strain, and the large SOC gives rise to an intrinsic voltage controlled magnetic anisotropy (VCMA). A slab terminated on both faces with Cr remains a compensated AFM, but with the compensation occurring nonlocally between mirror symmetric Cr pairs. In-plane alignment of the moments is preferred, the magnitude of the MAE remains large, similar to that of the bulk, and it is relatively insensitive to filling. △ Less

Submitted 6 December, 2020; v1 submitted 17 May, 2020; originally announced May 2020.

Comments: 10 pages, 8 figures

Journal ref: Phys. Rev. B 102, 224426 (2020)

Electron transport through antiferromagnetic spin textures and skyrmions in a magnetic tunnel junction

Authors: Nima Djavid, Roger K. Lake

Abstract: An ideal layered $\hat{x}$-polarized antiferromagnet (AFM) between two antialigned $\pm \hat{z}$ polarized ferromagnetic (FM) contacts transmits no current due to a $π$ phase difference of the matrix elements coupling the spin degenerate states to the two FM contacts. The ratio of the two matrix elements coupling the two spin degenerate $\hat{x}$ AFM states to a $\hat{z}$ FM contact is determined… ▽ More An ideal layered $\hat{x}$-polarized antiferromagnet (AFM) between two antialigned $\pm \hat{z}$ polarized ferromagnetic (FM) contacts transmits no current due to a $π$ phase difference of the matrix elements coupling the spin degenerate states to the two FM contacts. The ratio of the two matrix elements coupling the two spin degenerate $\hat{x}$ AFM states to a $\hat{z}$ FM contact is determined by the exchange energy and the eigenstate energy. Inserting a normal metal layer or tunnel barrier layer between one FM contact and the AFM alters this phase difference, and, due to the unequal weighting of the two spins at the interface, it also breaks the spin degeneracy of the two AFM states. The broken symmetry of the matrix elements combined with the broken degeneracy of the AFM states, result in a Fano resonance in the transmission and a turn-on of the $T_{\uparrow,\downarrow}$ transmission channel. Such a magnetic tunnel junction geometry with two antialigned $\pm \hat{z}$ FM contacts can electrically detect an AFM skyrmion. The AFM skyrmion serves as an analogue of the oblique polarizer in the triple polarizer experiment. Resistances and resistance ratios are calculated and compared for FM and AFM skyrmions in a magnetic tunnel junction. △ Less

Submitted 10 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. B 102, 024419 (2020)

Large spin-Hall effect in Si at room temperature

Authors: Paul C. Lou, Anand Katailiha, Ravindra G. Bhardwaj, Tonmoy Bhowmick, W. P. Beyermann, Roger K. Lake, Sandeep Kumar

Abstract: Silicon's weak intrinsic spin-orbit coupling and centrosymmetric crystal structure are a critical bottleneck to the development of Si spintronics, because they lead to an insignificant spin-Hall effect (spin current generation) and inverse spin-Hall effect (spin current detection). Here, we undertake current, magnetic field, crystallography dependent magnetoresistance and magneto thermal transport… ▽ More Silicon's weak intrinsic spin-orbit coupling and centrosymmetric crystal structure are a critical bottleneck to the development of Si spintronics, because they lead to an insignificant spin-Hall effect (spin current generation) and inverse spin-Hall effect (spin current detection). Here, we undertake current, magnetic field, crystallography dependent magnetoresistance and magneto thermal transport measurements to study the spin transport behavior in freestanding Si thin films. We observe a large spin-Hall magnetoresistance in both p-Si and n-Si at room temperature and it is an order of magnitude larger than that of Pt. One explanation of the unexpectedly large and efficient spin-Hall effect is spin-phonon coupling instead of spin-orbit coupling. The macroscopic origin of the spin-phonon coupling can be large strain gradients that can exist in the freestanding Si films. This discovery in a light, earth abundant and centrosymmetric material opens a new path of strain engineering to achieve spin dependent properties in technologically highly-developed materials. △ Less

Submitted 1 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. B 101, 094435, 2020

Properties of Shape-Engineered Phoxonic Crystals: Brillouin-Mandelstam Spectroscopy and Ellipsometry Study

Authors: Chun Yu Tammy Huang, Fariborz Kargar, Topojit Debnath, Bishwajit Debnath, Michael D. Valentin, Ron Synowicki, Stefan Schoeche, Roger K. Lake, Alexander A. Balandin

Abstract: We report the results of Brillouin-Mandelstam spectroscopy and Mueller matrix spectroscopic ellipsometry of the nanoscale "pillar with the hat" periodic silicon structures, revealing intriguing phononic and photonic properties. It has been theoretically shown that periodic structures with properly tuned dimensions can act simultaneously as phononic and photonic - phoxonic - crystals, strongly affe… ▽ More We report the results of Brillouin-Mandelstam spectroscopy and Mueller matrix spectroscopic ellipsometry of the nanoscale "pillar with the hat" periodic silicon structures, revealing intriguing phononic and photonic properties. It has been theoretically shown that periodic structures with properly tuned dimensions can act simultaneously as phononic and photonic - phoxonic - crystals, strongly affecting the light-matter interactions. Acoustic phonon states can be tuned by external boundaries, either as a result of phonon confinement effects in individual nanostructures, or as a result of artificially induced external periodicity, as in the phononic crystals. The shape of the nanoscale pillar array was engineered to ensure the interplay of both effects. The Brillouin-Mandelstam spectroscopy data indicated strong flattening of the acoustic phonon dispersion in the frequency range from 2 GHz to 20 GHz and the phonon wave vector extending to the higher-order Brillouin zones. The specifics of the phonon dispersion dependence on the pillar arrays orientation suggest the presence of both periodic modulation and spatial localization effects for the acoustic phonons. The ellipsometry data reveal a distinct scatter pattern of four-fold symmetry due to nanoscale periodicity of the pillar arrays. Our results confirm the dual functionality of the nanostructured shape-engineered structure and indicate a possible new direction for fine-tuning the light-matter interaction in the next generation of photonic, optoelectronic, and phononic devices. △ Less

Submitted 3 March, 2020; originally announced March 2020.

Comments: 25 pages, 7 figures

Spacetimes with a vanishing second Ricci invariant

Authors: Kayll Lake

Abstract: Spacetimes with a vanishing second Ricci invariant, but which are not necessarily Ricci - flat, though common in general relativity, are seldom studied in a coordinate and symmetry independent way by actually using their Ricci invariants. Yet, and as an example, it can be shown by use of Ricci invariants that no such spacetimes can actually represent a perfect fluid by way of Einstein's equations.… ▽ More Spacetimes with a vanishing second Ricci invariant, but which are not necessarily Ricci - flat, though common in general relativity, are seldom studied in a coordinate and symmetry independent way by actually using their Ricci invariants. Yet, and as an example, it can be shown by use of Ricci invariants that no such spacetimes can actually represent a perfect fluid by way of Einstein's equations. The widely studied Kiselev black hole is a particularly simple example of such a spacetime. Yet it is frequently, and erroneously, referred to as a perfect fluid. This paper gathers together information relevant to the study of spacetimes with vanishing a second Ricci invariant. It is shown that such spacetimes need not be stationary, a point relevant to their possible physical significance. △ Less

Submitted 17 December, 2019; originally announced December 2019.

Comments: 3 pages

Small Angle and Non-Monotonic Behavior of the Thermal Conductivity in Twisted Bilayer Graphene

Authors: Chenyang Li, Roger K. Lake

Abstract: Nothing is known about the thermal conductivity in twisted bilayer graphene (TBG) at small twist angles, and how it approaches its aligned value as the twist angle approaches 0 degrees. To provide insight into these questions, we perform large scale non-equilibrium molecular dynamics calculations on commensurate TBG structures with angles down to 1.87 degrees. The results show a smooth, non-monoto… ▽ More Nothing is known about the thermal conductivity in twisted bilayer graphene (TBG) at small twist angles, and how it approaches its aligned value as the twist angle approaches 0 degrees. To provide insight into these questions, we perform large scale non-equilibrium molecular dynamics calculations on commensurate TBG structures with angles down to 1.87 degrees. The results show a smooth, non-monotonic behavior of the thermal conductivity with respect to the commensurate lattice constant. As the commensurate lattice constant increases, the thermal conductivity initially decreases by 50%, and then it returns to 90% of its aligned value as the angle is reduced to 1.89 degrees. These same qualitative trends are followed by the trends in the shear elastic constant, the wrinkling intensity, and the out-of-plane ZA2 phonon frequency. The picture that emerges of the physical mechanism governing the thermal conductivity is that misorientation reduces the shear elastic constant; the reduced shear elastic constant enables greater wrinkling; and the greater wrinkling reduces the thermal conductivity. The small-angle behavior of the thermal conductivity raises the question of how do response functions approach their aligned values as the twist angle approaches 0 degrees. Is the approach gradual, discontinuous, or a combination of the two? △ Less

Submitted 16 November, 2019; v1 submitted 11 November, 2019; originally announced November 2019.

Comments: 17 pages, 7 figures, 1 table

Phonon and Thermal Properties of Quasi-Two-Dimensional FePS3 and MnPS3 Antiferromagnetic Semiconductor Materials

Authors: Fariborz Kargar, Ece Aytan, Subhajit Ghosh, Jonathan Lee, Michael Gomez, Yuhang Liu, Andres Sanchez Magana, Zahra Barani Beiranvand, Bishwajit Debnath, Richard Wilson, Roger K. Lake, Alexander A. Balandin

Abstract: We report results of investigation of the phonon and thermal properties of the exfoliated films of layered single crystals of antiferromagnetic FePS3 and MnPS3 semiconductors. The Raman spectroscopy was conducted using three different excitation lasers with the wavelengths of 325 nm (UV), 488 nm (blue), and 633 nm (red). The resonant UV-Raman spectroscopy reveals new spectral features, which are n… ▽ More We report results of investigation of the phonon and thermal properties of the exfoliated films of layered single crystals of antiferromagnetic FePS3 and MnPS3 semiconductors. The Raman spectroscopy was conducted using three different excitation lasers with the wavelengths of 325 nm (UV), 488 nm (blue), and 633 nm (red). The resonant UV-Raman spectroscopy reveals new spectral features, which are not detectable via visible Raman light scattering. The thermal conductivity of FePS3 and MnPS3 thin films was measured by two different techniques: the steady-state Raman optothermal and transient time-resolved magneto-optical Kerr effect. The Raman optothermal measurements provided the orientation-average thermal conductivity of FePS3 to be 1.35 W/mK at room temperature. The transient measurements revealed that the through-plane and in-plane thermal conductivity of FePS3 is 0.85 W/mK and 2.7 W/mK, respectively. The films of MnPS3 have higher thermal conductivity of 1.1 W/mK through-plane and 6.3 W/mK in-plane. The data obtained by both techniques reveal strong thermal anisotropy of the films and the dominant contribution of phonons to heat conduction. Our results are important for the proposed applications of the antiferromagnetic semiconductor thin films in spintronic devices. △ Less

Submitted 14 August, 2019; originally announced August 2019.

Comments: 43 pages, 8 figures

Journal ref: ACS Nano, 14, 2, 2424 (2020)

Strain controlled superconductivity in few-layer NbSe2

Authors: Cliff Chen, Protik Das, Ece Aytan, Weimin Zhou, Justin Horowitz, Biswarup Satpati, Alexander A. Balandin, Roger K. Lake, Peng Wei

Abstract: The controlled tunability of superconductivity in low-dimensional materials may enable new quantum devices. Particularly in triplet or topological superconductors, tunneling devices such as Josephson junctions etc. can demonstrate exotic functionalities. The tunnel barrier, an insulating or normal material layer separating two superconductors, is a key component for the junctions. Thin layers of N… ▽ More The controlled tunability of superconductivity in low-dimensional materials may enable new quantum devices. Particularly in triplet or topological superconductors, tunneling devices such as Josephson junctions etc. can demonstrate exotic functionalities. The tunnel barrier, an insulating or normal material layer separating two superconductors, is a key component for the junctions. Thin layers of NbSe2 have been shown as a superconductor with strong spin orbit coupling, which can give rise to topological superconductivity if driven by a large magnetic exchange field. Here we demonstrate the superconductor-insulator transitions in epitaxially grown few-layer NbSe2 with wafer-scale uniformity on insulating substrates. We provide the electrical transport, Raman spectroscopy, cross-sectional transmission electron microscopy, and X-ray diffraction characterizations of the insulating phase. We show that the superconductor-insulator transition is driven by strain, which also causes characteristic energy shifts of the Raman modes. Our observation paves the way for high quality hetero-junction tunnel barriers to be seamlessly built into epitaxial NbSe2 itself, thereby enabling highly scalable tunneling devices for superconductor-based quantum electronics. △ Less

Submitted 31 July, 2020; v1 submitted 11 July, 2019; originally announced July 2019.

Electric Switching of the Charge-Density-Wave and Normal Metallic Phases in Tantalum Disulfide Thin-Film Devices

Authors: A. Geremew, S. Rumyantsev, F. Kargar, B. Debnath, A. Nosek, M. Bloodgood, M. Bockrath, T. Salguero, R. K. Lake, A. A. Balandin

Abstract: We report on switching among three charge-density-wave phases - commensurate, nearly commensurate, incommensurate - and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane electric field. The electric switching among all phases has been achieved over a wide temperature range, from 77 K to 400 K. The low-frequency electronic noise spectrosco… ▽ More We report on switching among three charge-density-wave phases - commensurate, nearly commensurate, incommensurate - and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane electric field. The electric switching among all phases has been achieved over a wide temperature range, from 77 K to 400 K. The low-frequency electronic noise spectroscopy has been used as an effective tool for monitoring the transitions, particularly the switching from the incommensurate charge-density-wave phase to the normal metal phase. The noise spectral density exhibits sharp increases at the phase transition points, which correspond to the step-like changes in resistivity. Assignment of the phases is consistent with low-field resistivity measurements over the temperature range from 77 K to 600 K. Analysis of the experimental data and calculations of heat dissipation suggest that Joule heating plays a dominant role in the electric-field induced transitions in the tested 1T-TaS2 devices on Si/SiO2 substrates. The possibility of electrical switching among four different phases of 1T-TaS2 is a promising step toward nanoscale device applications. The results also demonstrate the potential of noise spectroscopy for investigating and identifying phase transitions in materials. △ Less

Submitted 14 March, 2019; originally announced March 2019.

Comments: 32 pages, 7 figures

Journal ref: ACS Nano, 13, 7231 (2019)

Strain control of the Neel vector in Mn-based antiferromagnets

Authors: In Jun Park, Taehwan Lee, Protik Das, Bishwajit Debnath, Greg P. Carman, Roger K. Lake

Abstract: Control of the Neel vector in antiferromagnetic materials is one of the challenges preventing their use as active device components. Several methods have been investigated such as exchange bias, electric current, and spin injection, but little is known about strain-mediated anisotropy. This study of the antiferromagnetic L10-type MnX alloys MnIr, MnRh, MnNi, MnPd, and MnPt shows that a small amoun… ▽ More Control of the Neel vector in antiferromagnetic materials is one of the challenges preventing their use as active device components. Several methods have been investigated such as exchange bias, electric current, and spin injection, but little is known about strain-mediated anisotropy. This study of the antiferromagnetic L10-type MnX alloys MnIr, MnRh, MnNi, MnPd, and MnPt shows that a small amount of strain effectively rotates the direction of the Neel vector by 90 degrees for all of the materials. For MnIr, MnRh, MnNi, and MnPd, the Neel vector rotates within the basal plane. For MnPt, the Neel vector rotates from out-of-plane to in-plane under tensile strain. The effectiveness of strain control is quantified by a metric of efficiency and by direct calculation of the magnetostriction coefficients. The values of the magnetostriction coefficients are comparable with those from ferromagnetic materials. These results indicate that strain is a mechanism that can be exploited for control of the Neel vectors in this family of antiferromagnets. △ Less

Submitted 1 March, 2019; originally announced March 2019.

Comments: 10 pages including supplementary information. Currently in review at Applied Physics Letters

Boundary Orbits: 1 Static Spacetimes

Authors: Sheref Nasereldin, Kayll Lake

Abstract: The study of circular orbits in spacetime is of astrophysical importance. The identification and classification of circular orbits in both static and stationary spacetimes remains an active area of interest. Even in the simplest static spherically symmetric case, it is well known that the introduction of a cosmological constant in vacuum leads to the study of quartic polynomials in order to locate… ▽ More The study of circular orbits in spacetime is of astrophysical importance. The identification and classification of circular orbits in both static and stationary spacetimes remains an active area of interest. Even in the simplest static spherically symmetric case, it is well known that the introduction of a cosmological constant in vacuum leads to the study of quartic polynomials in order to locate \textit{boundary orbits}, those that straddle between stable and unstable orbits. These orbits are often referred to as `marginally stable orbits' or `indifferently stable orbits'. A comprehensive study of texts offers little clarification as to the stability or instability of these boundary orbits. Here we argue that the direct use of second order perturbation theory immediately shows that these boundary orbits are unstable in the perturbative sense. Our study here includes the two-particle Curzon-Chazy solution. △ Less

Submitted 5 June, 2019; v1 submitted 13 February, 2019; originally announced February 2019.

Comments: 4 pages revtex 4.1 Updated and expanded

Experimentally Measured Field Effect Mobilities for Few Layer van der Waals Materials

Authors: Somaia Sarawat Sylvia, Roger K. Lake

Abstract: A literature survey of experimentally measured mobility values for the two-dimensional materials MoS2, MoSe2, MoTe2, WS2, WSe2, and black phosphorous carried out during 2015. A literature survey of experimentally measured mobility values for the two-dimensional materials MoS2, MoSe2, MoTe2, WS2, WSe2, and black phosphorous carried out during 2015. △ Less

Submitted 17 October, 2018; originally announced October 2018.

Report number: SRC publication number P089463

Charged impurity scattering in two-dimensional materials with ring-shaped valence bands: GaS, GaSe, InS, and InSe

Authors: Protik Das, Darshana Wickramaratne, Bishwajit Debnath, Gen Yin, Roger K. Lake

Abstract: The singular density of states and the two Fermi wavevectors resulting from a ring-shaped or "Mexican hat" valence band give rise to unique trends in the charged impurity scattering rates and charged impurity limited mobilities. Ring shaped valence bands are common features of many monolayer and few-layer two-dimensional materials including the III-VI materials GaS, GaSe, InS, and InSe. The waveve… ▽ More The singular density of states and the two Fermi wavevectors resulting from a ring-shaped or "Mexican hat" valence band give rise to unique trends in the charged impurity scattering rates and charged impurity limited mobilities. Ring shaped valence bands are common features of many monolayer and few-layer two-dimensional materials including the III-VI materials GaS, GaSe, InS, and InSe. The wavevector dependence of the screening, calculated within the random phase approximation, is so strong that it is the dominant factor determining the overall trends of the scattering rates and mobilities with respect to temperature and hole density. Charged impurities placed on the substrate and in the 2D channel are considered. The different wavevector dependencies of the bare Coulomb potentials alter the temperature dependence of the mobilities. Moving the charged impurities 5 $Å$ from the center of the channel to the substrate increases the mobility by an order of magnitude. △ Less

Submitted 31 August, 2018; originally announced August 2018.

Comments: 11 pages, 11 figures

Journal ref: Phys. Rev. B 99, 085409 (2019)

Spin superfluid Josephson oscillator

Authors: Yizhou Liu, Igor Barsukov, Ilya Krivorotov, Yafis Barlas, Roger K. Lake

Abstract: The magnetic analogue of the Josephson effect can be exploited to develop a new class of nano-spin oscillators that we denote as spin superfluid Josephson oscillators. Such a device, consisting of two exchange coupled easy-plane metallic ferromagnets separated by a thin normal metal spacer, is proposed and analyzed. A spin chemical potential difference drives a $2π$ precession of the in-plane magn… ▽ More The magnetic analogue of the Josephson effect can be exploited to develop a new class of nano-spin oscillators that we denote as spin superfluid Josephson oscillators. Such a device, consisting of two exchange coupled easy-plane metallic ferromagnets separated by a thin normal metal spacer, is proposed and analyzed. A spin chemical potential difference drives a $2π$ precession of the in-plane magnetization of each ferromagnet. The $2 π$ precession angle gives maximum values of the giant magnetoresistance, resulting in large output power compared to conventional spin Hall oscillators. An applied ac current results in a time-averaged magnetoresistance with Shapiro-like steps. The multistate mode-locking behavior exhibited by the spin Shapiro steps may be explored for applications in neuromorphic computing. As an experimental characterization method, electrical measurements of spin superfluid Josephson junctions can provide additional signatures of spin superfluidity. △ Less

Submitted 3 July, 2018; originally announced July 2018.

Planar Hall effect in antiferromagnetic MnTe thin films

Authors: Gen Yin, Jie-Xiang Yu, Yizhou Liu, Roger K. Lake, Jiadong Zang, Kang L. Wang

Abstract: We show that the spin-orbit coupling (SOC) in alpha-MnTe impacts the transport behavior by generating an anisotropic valence-band splitting, resulting in four spin-polarized pockets near Gamma. A minimal k-dot-p model is constructed to capture this splitting by group theory analysis, a tight-binding model and ab initio calculations. The model is shown to describe the rotation symmetry of the zero-… ▽ More We show that the spin-orbit coupling (SOC) in alpha-MnTe impacts the transport behavior by generating an anisotropic valence-band splitting, resulting in four spin-polarized pockets near Gamma. A minimal k-dot-p model is constructed to capture this splitting by group theory analysis, a tight-binding model and ab initio calculations. The model is shown to describe the rotation symmetry of the zero-field planer Hall effect (PHE). The upper limit of the PHE percentage is shown to be fundamentally determined by the band shape, and is quantitatively estimated to be roughly 31% by first principles. △ Less

Submitted 5 April, 2019; v1 submitted 30 May, 2018; originally announced May 2018.

Journal ref: Phys. Rev. Lett. 122, 106602 (2019)

High Figure of Merit Magneto Optics from Interfacial Skyrmions on Topological Insulators

Authors: Tonmoy K. Bhowmick, Amrit De, Roger K. Lake

Abstract: In the Kerr rotation geometry, magneto optic memory devices typically suffer from low figure-of-merit (FOM) and long write times. We show that skyrmions formed at the interface of a thin-film multiferroic and a topological insulator can give rise to high FOM magneto optic Kerr effects (MOKEs). Huge differential MOKE can arise in parts of the phase diagram. Resonance like features in the MOKE spect… ▽ More In the Kerr rotation geometry, magneto optic memory devices typically suffer from low figure-of-merit (FOM) and long write times. We show that skyrmions formed at the interface of a thin-film multiferroic and a topological insulator can give rise to high FOM magneto optic Kerr effects (MOKEs). Huge differential MOKE can arise in parts of the phase diagram. Resonance like features in the MOKE spectra arising from the induced low energy TI bandgap, the multiferroic-film thickness, and the high energy Drude like behavior are resolved and explained. The Fermi level dependence of the MOKE signatures is distinct for the different magnetic textures. This has broad implications for magnetic texture characterization, electro-optic modulators and isolators and high density magnetic optic memory. △ Less

Submitted 7 May, 2018; originally announced May 2018.

Journal ref: Phys. Rev. B 98, 024424 (2018)

Long-Distance Spin Transport Through a Graphene Quantum Hall Antiferromagnet

Authors: Petr Stepanov, Shi Che, Dmitry Shcherbakov, Jiawei Yang, Kevin Thilahar, Greyson Voigt, Marc W. Bockrath, Dmitry Smirnov, Kenji Watanabe, Takashi Taniguchi, Roger K. Lake, Yafis Barlas, Allan H. MacDonald, Chun Ning Lau

Abstract: Antiferromagnetic insulators (AFMI) are robust against stray fields, and their intrinsic dynamics could enable ultrafast magneto-optics and ultrascaled magnetic information processing. Low dissipation, long distance spin transport and electrical manipulation of antiferromagnetic order are much sought-after goals of spintronics research. Here, we report the first experimental evidence of robust lon… ▽ More Antiferromagnetic insulators (AFMI) are robust against stray fields, and their intrinsic dynamics could enable ultrafast magneto-optics and ultrascaled magnetic information processing. Low dissipation, long distance spin transport and electrical manipulation of antiferromagnetic order are much sought-after goals of spintronics research. Here, we report the first experimental evidence of robust long-distance spin transport through an AFMI, in our case the gate-controlled, canted antiferromagnetic (CAF) state that appears at the charge neutrality point of graphene in the presence of an external magnetic field. Utilizing gate-controlled quantum Hall (QH) edge states as spin-dependent injectors and detectors, we observe large, non-local electrical signals across a 5 micron-long, insulating channel only when it is biased into the nu=0 CAF state. Among possible transport mechanisms, spin superfluidity in an antiferromagnetic state gives the most consistent interpretation of the non-local signal's dependence on magnetic field, temperature and filling factors. This work also demonstrates that graphene in the QH regime is a powerful model system for fundamental studies of antiferromagnetic, and in the case of a large in-plane field, ferromagnetic spintronics. △ Less

Submitted 22 January, 2018; originally announced January 2018.

Journal ref: Nature Physics (2018)

Spin - Phonon Coupling in Nickel Oxide Determined from Ultraviolet Raman Spectroscopy

Authors: E. Aytan, B. Debnath, F. Kargar, Y. Barlas, M. M. Lacerda, J. X. Li, R. K. Lake, J. Shi, A. A. Balandin

Abstract: Nickel oxide (NiO) has been studied extensively for various applications ranging from electrochemistry to solar cells [1,2]. In recent years, NiO attracted much attention as an antiferromagnetic (AF) insulator material for spintronic devices [3-10]. Understanding the spin - phonon coupling in NiO is a key to its functionalization, and enabling AF spintronics' promise of ultra-high-speed and low-po… ▽ More Nickel oxide (NiO) has been studied extensively for various applications ranging from electrochemistry to solar cells [1,2]. In recent years, NiO attracted much attention as an antiferromagnetic (AF) insulator material for spintronic devices [3-10]. Understanding the spin - phonon coupling in NiO is a key to its functionalization, and enabling AF spintronics' promise of ultra-high-speed and low-power dissipation [11,12]. However, despite its status as an exemplary AF insulator and a benchmark material for the study of correlated electron systems, little is known about the spin - phonon interaction, and the associated energy dissipation channel, in NiO. In addition, there is a long-standing controversy over the large discrepancies between the experimental and theoretical values for the electron, phonon, and magnon energies in NiO [13-23]. This gap in knowledge is explained by NiO optical selection rules, high Neel temperature and dominance of the magnon band in the visible Raman spectrum, which precludes a conventional approach for investigating such interaction. Here we show that by using ultraviolet (UV) Raman spectroscopy one can extract the spin - phonon coupling coefficients in NiO. We established that unlike in other materials, the spins of Ni atoms interact more strongly with the longitudinal optical (LO) phonons than with the transverse optical (TO) phonons, and produce opposite effects on the phonon energies. The peculiarities of the spin - phonon coupling are consistent with the trends given by density functional theory calculations. The obtained results shed light on the nature of the spin - phonon coupling in AF insulators and may help in developing innovative spintronic devices. △ Less

Submitted 17 October, 2017; originally announced October 2017.

Comments: 16 pages; 2 figures

Journal ref: Applied Physics Letters, 111, 252402 (2017)

Exciton condensate in bilayer transition metal dichalcogenides: strong coupling regime

Authors: Bishwajit Debnath, Yafis Barlas, Darshana Wickramaratne, Mahesh R. Neupane, Roger K. Lake

Abstract: Exciton condensation in an electron-hole bilayer system of monolayer transition metal dichalcogenides is analyzed at three different levels of theory to account for screening and quasiparticle renormalization. The large effective masses of the transition metal dichalcogenides place them in a strong coupling regime. In this regime, mean field (MF) theory with either an unscreened or screened interl… ▽ More Exciton condensation in an electron-hole bilayer system of monolayer transition metal dichalcogenides is analyzed at three different levels of theory to account for screening and quasiparticle renormalization. The large effective masses of the transition metal dichalcogenides place them in a strong coupling regime. In this regime, mean field (MF) theory with either an unscreened or screened interlayer interaction predicts a room temperature condensate. Interlayer and intralayer interactions renormalize the quasiparticle dispersion, and this effect is included in a GW approximation. The renormalization reverses the trends predicted from the unscreened or screened MF theories. In the strong coupling regime, intralayer interactions have a large impact on the magnitude of the order parameter and its functional dependencies on effective mass and carrier density. △ Less

Submitted 21 July, 2017; originally announced July 2017.

Comments: 7 pages, 7 figures

Journal ref: Phys. Rev. B 96, 174504 (2017)

Revisiting the Darmois and Lichnerowicz junction conditions

Authors: Kayll Lake

Abstract: What have become known as the "Darmois" and "Lichnerowicz" junction conditions are often stated to be equivalent, "essentially" equivalent, in a "sense" equivalent, and so on. One even sees not infrequent reference to the "Darmois-Lichnerowicz" conditions. Whereas the equivalence of these conditions is manifest in Gaussian-normal coordinates, a fact that has been known for close to a century, this… ▽ More What have become known as the "Darmois" and "Lichnerowicz" junction conditions are often stated to be equivalent, "essentially" equivalent, in a "sense" equivalent, and so on. One even sees not infrequent reference to the "Darmois-Lichnerowicz" conditions. Whereas the equivalence of these conditions is manifest in Gaussian-normal coordinates, a fact that has been known for close to a century, this equivalence does not extend to a loose definition of "admissible" coordinates (coordinates in which the metric and its first order derivatives are continuous). We show this here by way of a simple, but physically relevant, example. In general, a loose definition of the "Lichnerowicz" conditions gives additional restrictions, some of which simply amount to a convenient choice of gauge, and some of which amount to real physical restrictions, away from strict "admissible" coordinates. The situation was totally confused by a very influential, and now frequently misquoted, paper by Bonnor and Vickers, that erroneously claimed a proof of the equivalence of the "Darmois" and "Lichnerowicz" conditions within this loose definition of "admissible" coordinates. A correct proof, based on a strict definition of "admissible" coordinates, was given years previous by Israel. It is that proof, generally unrecognized, that we must refer to. Attention here is given to a clarification of the subject, and to the history of the subject, which, it turns out, is rather fascinating in itself. △ Less

Submitted 18 May, 2017; v1 submitted 2 May, 2017; originally announced May 2017.

Comments: 12 pages, extended text and references

Journal ref: Gen Relativ Gravit (2017) 49: 134

Does a Nash theory of gravity make dark energy superfluous?

Authors: Kayll Lake

Abstract: Recently Aadne and Grøn have argued that dark energy may follow naturally from a Nash theory of gravity. In this brief note I argue why this cannot be the case. Recently Aadne and Grøn have argued that dark energy may follow naturally from a Nash theory of gravity. In this brief note I argue why this cannot be the case. △ Less

Submitted 7 March, 2017; originally announced March 2017.

Comments: 2 pages comments welcome

Inelastic Light Scattering Spectroscopy of Magnons and Phonons in Nickel Oxide: Effects of Temperature

Authors: M. M. Lacerda, F. Kargar, E. Aytan, R. Samnakay, B. Debnath, J. X. Li, A. Khitun, R. K. Lake, J. Shi, A. A. Balandin

Abstract: We report results of an investigation of the temperature dependence of the magnon and phonon frequencies in NiO. A combination of Brillouin - Mandelstam and Raman spectroscopies allowed us to elucidate the evolution of the phonon and magnon spectral signatures from the Brillouin zone center (GHz range) to the second-order peaks from the zone boundary (THz range). The temperature-dependent behavior… ▽ More We report results of an investigation of the temperature dependence of the magnon and phonon frequencies in NiO. A combination of Brillouin - Mandelstam and Raman spectroscopies allowed us to elucidate the evolution of the phonon and magnon spectral signatures from the Brillouin zone center (GHz range) to the second-order peaks from the zone boundary (THz range). The temperature-dependent behavior of the magnon and phonon bands in the NiO spectrum indicates the presence of antiferromagnetic (AF) order fluctuation or a persistent AF state at temperatures above the Neel temperature (T=523 K). Tuning the intensity of the excitation laser provides a method for disentangling the features of magnons from acoustic phonons without the application of a magnetic field. Our results are useful for interpretation of the inelastic-light scattering spectrum of NiO, and add to the knowledge of its magnon properties important for THz spintronic devices. △ Less

Submitted 14 February, 2017; originally announced February 2017.

Comments: 12 pages; 4 figures

Journal ref: Applied Physics Letters, 110, 202406 (2017)

Uniform Benchmarking of Low Voltage Van Der Waals FETs

Authors: Somaia Sarwat Sylvia, Khairul Alam, Roger K Lake

Abstract: Monolayer MoS2, MoSe2, MoTe2, WS2, WSe2, and black phosphorous field effect transistors (FETs) operating in the low-voltage (LV) regime (0.3V) with geometries from the 2019 and 2028 nodes of the 2013 International Technology Roadmap for Semiconductors (ITRS) are benchmarked along with an ultra-thin-body Si FET. Current can increase or decrease with scaling, and the trend is strongly correlated wit… ▽ More Monolayer MoS2, MoSe2, MoTe2, WS2, WSe2, and black phosphorous field effect transistors (FETs) operating in the low-voltage (LV) regime (0.3V) with geometries from the 2019 and 2028 nodes of the 2013 International Technology Roadmap for Semiconductors (ITRS) are benchmarked along with an ultra-thin-body Si FET. Current can increase or decrease with scaling, and the trend is strongly correlated with the effective mass. For LV operation at the 2028 node, an effective mass of ~0.4 m0, corresponding to that of WSe2, gives the maximum drive current. The short 6 nm gate length combined with LV operation is forgiving in its requirements for material quality and contact resistances. In this LV regime, device and circuit performance are competitive using currently measured values for mobilities and contact resistances for the monolayer two-dimensional materials. △ Less

Submitted 20 November, 2016; originally announced November 2016.

Relativistic Aberration and the Cosmological Constant in Gravitational Lensing I: Introduction

Authors: Dmitri Lebedev, Kayll Lake

Abstract: An analysis of null geodesics in Schwarzschild de Sitter space is presented with special attention to their global `bending angles', local measurable angles, and the involvement of the cosmological constant. We make use of a general technique which allows for finding observable intersection angles of null trajectories analytically. A general relativistic aberration relationship is established as o… ▽ More An analysis of null geodesics in Schwarzschild de Sitter space is presented with special attention to their global `bending angles', local measurable angles, and the involvement of the cosmological constant. We make use of a general technique which allows for finding observable intersection angles of null trajectories analytically. A general relativistic aberration relationship is established as one of its applications. The question of whether or not the cosmological constant, $Λ$, contributes to orbits of light and to related observable quantities is addressed in detail. We also discuss the ongoing debate on this issue and respond to some recent papers on the topic. The dependence of measurable quantities on the motion of observers is stressed throughout. Exact formulas for measurable intersection angles, as well as gravitational lens equations for observers in the Schwarzschild de Sitter background are provided. △ Less

Submitted 16 September, 2016; originally announced September 2016.

Comments: revtex with 4 figures

Interlayer Transport through a Graphene / Rotated-Boron-Nitride / Graphene Heterostructure

Authors: Supeng Ge, K. M. Masum Habib, Amrit De, Yafis Barlas, Darshana Wickramaratne, Mahesh R. Neupane, Roger K. Lake

Abstract: Interlayer electron transport through a graphene / hexagonal boron-nitride (h-BN) / graphene heterostructure is strongly affected by the misorientation angle $θ$ of the h-BN with respect to the graphene layers with different physical mechanisms governing the transport in different regimes of angle, Fermi level, and bias. The different mechanisms and their resulting signatures in resistance and cur… ▽ More Interlayer electron transport through a graphene / hexagonal boron-nitride (h-BN) / graphene heterostructure is strongly affected by the misorientation angle $θ$ of the h-BN with respect to the graphene layers with different physical mechanisms governing the transport in different regimes of angle, Fermi level, and bias. The different mechanisms and their resulting signatures in resistance and current are analyzed using two different models, a tight-binding, non-equilibrium Green function model and an effective continuum model, and the qualitative features resulting from the two different models compare well. In the large-angle regime ($θ> 4^\circ$), the change in the effective h-BN bandgap seen by an electron at the $K$ point of the graphene causes the resistance to monotonically increase with angle by several orders of magnitude reaching a maximum at $θ= 30^\circ$. It does not affect the peak-to-valley current ratios in devices that exhibit negative differential resistance. In the small-angle regime ($θ< 4^\circ$), Umklapp processes open up new conductance channels that manifest themselves as non-monotonic features in a plot of resistance versus Fermi level that can serve as experimental signatures of this effect. For small angles and high bias, the Umklapp processes give rise to two new current peaks on either side of the direct tunneling peak. △ Less

Submitted 5 September, 2016; originally announced September 2016.

Journal ref: Phys. Rev. B 95, 045303 (2017)

Interlayer Resistance of Misoriented MoS2

Authors: Kuan Zhou, Darshana Wickramaratne, Supeng Ge, Shanshan Su, Amrit De, Roger K. Lake

Abstract: Interlayer misorientation in transition metal dichalcogenides alters the interlayer distance, the electronic band structure, and the vibrational modes, but, its effect on the interlayer resistance is not known. This work analyzes the coherent interlayer resistance of misoriented 2H-MoS2 for low energy electrons and holes as a function of the misorientation angle. The electronic interlayer resistan… ▽ More Interlayer misorientation in transition metal dichalcogenides alters the interlayer distance, the electronic band structure, and the vibrational modes, but, its effect on the interlayer resistance is not known. This work analyzes the coherent interlayer resistance of misoriented 2H-MoS2 for low energy electrons and holes as a function of the misorientation angle. The electronic interlayer resistance monotonically increases with the supercell lattice constant by several orders of magnitude similar to that of misoriented bilayer graphene. The large hole coupling gives low interlayer hole resistance that weakly depends on the misorientation angle. Interlayer rotation between an n-type region and a p-type region will suppress the electron current with little effect on the hole current. We estimate numerical bounds and explain the results in terms of the orbital composition of the bands at high symmetry points. Density functional theory calculations provide the interlayer coupling used in both a tunneling Hamiltonian and a non-equilibrium Green function calculation of the resistivity. △ Less

Submitted 12 June, 2016; originally announced June 2016.

Comments: 6 pages, 3 figures

An infinite class of exact static anisotropic spheres that break the Buchdal bound

Authors: Kayll Lake

Abstract: An infinite class of exact static anisotropic spheres is developed. All members of the class satisfy (i) regularity (meaning no singularities), and in particular at the origin, (ii) positive but monotone decreasing energy density ($ρ(r)$), radial pressure ($p(r)$), and tangential pressure ($P(r)$), (iii) a finite value of $r=R$ such that $p(R)=0$ defining the boundary surface onto vacuum, (iv)… ▽ More An infinite class of exact static anisotropic spheres is developed. All members of the class satisfy (i) regularity (meaning no singularities), and in particular at the origin, (ii) positive but monotone decreasing energy density ($ρ(r)$), radial pressure ($p(r)$), and tangential pressure ($P(r)$), (iii) a finite value of $r=R$ such that $p(R)=0$ defining the boundary surface onto vacuum, (iv) $p \leq ρ$, and (v) $p + 2 P=3 ρ$. All standard energy conditions are satisfied except for the dominant energy condition which has an innocuous violation by the tangential stress since $ρ\leq P$ by construction. An infinite number of the solutions violate the Buchdal bound. △ Less

Submitted 9 June, 2016; originally announced June 2016.

Comments: 5 pages 6 figures revtex

Trapped-ion quantum logic with global radiation fields

Authors: S. Weidt, J. Randall, S. C. Webster, K. Lake, A. E. Webb, I. Cohen, T. Navickas, B. Lekitsch, A. Retzker, W. K. Hensinger

Abstract: Trapped ions are a promising tool for building a large-scale quantum computer. However, the number of required radiation fields for the realisation of quantum gates in any proposed ion-based architecture scales with the number of ions within the quantum computer, posing a major obstacle when imagining a device with millions of ions. Here we present a fundamentally different concept for trapped-ion… ▽ More Trapped ions are a promising tool for building a large-scale quantum computer. However, the number of required radiation fields for the realisation of quantum gates in any proposed ion-based architecture scales with the number of ions within the quantum computer, posing a major obstacle when imagining a device with millions of ions. Here we present a fundamentally different concept for trapped-ion quantum computing where this detrimental scaling entirely vanishes, replacing millions of radiation fields with only a handful of fields. The method is based on individually controlled voltages applied to each logic gate location to facilitate the actual gate operation analogous to a traditional transistor architecture within a classical computer processor. To demonstrate the key principle of this approach we implement a versatile quantum gate method based on long-wavelength radiation and use this method to generate a maximally entangled state of two quantum engineered clock-qubits with fidelity 0.985(12). This quantum gate also constitutes a simple-to-implement tool for quantum metrology, sensing and simulation. △ Less

Submitted 9 June, 2016; v1 submitted 10 March, 2016; originally announced March 2016.

Journal ref: Phys. Rev. Lett. 117, 220501 (2016)

An Integrated Tantalum Sulfide - Boron Nitride - Graphene Oscillator: A Charge-Density-Wave Device Operating at Room Temperature

Authors: Guanxiong Liu, Bishwajit Debnath, Timothy R. Pope, Tina T. Salguero, Roger K. Lake, Alexander A. Balandin

Abstract: The charge-density-wave (CDW) phase is a macroscopic quantum state consisting of a periodic modulation of the electronic charge density accompanied by a periodic distortion of the atomic lattice in quasi-1D or layered 2D metallic crystals. Several layered transition metal dichalcogenides, such as 1T-TaSe2, 1T-TaS2 and 1T-TiSe2, exhibit unusually high transition temperatures to different CDW symmet… ▽ More The charge-density-wave (CDW) phase is a macroscopic quantum state consisting of a periodic modulation of the electronic charge density accompanied by a periodic distortion of the atomic lattice in quasi-1D or layered 2D metallic crystals. Several layered transition metal dichalcogenides, such as 1T-TaSe2, 1T-TaS2 and 1T-TiSe2, exhibit unusually high transition temperatures to different CDW symmetry-reducing phases. These transitions can be affected by environmental conditions, film thickness and applied electric bias. However, device applications of these intriguing systems at room temperature or their integration with other 2D materials have not been explored. Here we show that in 2D CDW 1T-TaS2, the abrupt change in the electrical conductivity and hysteresis at the transition point between nearly-commensurate and incommensurate charge-density-wave phases can be used for constructing an oscillator that operates at room temperature. The hexagonal boron nitride was capped on 1T-TaS2 thin film to provide protection from oxidation, and an integrated graphene transistor provides a voltage tunable, matched, low-resistance load enabling precise voltage control of the oscillator frequency. The integration of these three disparate two-dimensional materials, in a way that exploits the unique properties of each, yields a simple, miniaturized, voltage-controlled oscillator device. Theoretical considerations suggest that the upper limit of oscillation frequency to be in the THz regime. △ Less

Submitted 16 February, 2016; originally announced February 2016.

Comments: 16 pages; 3 figures

Journal ref: Nature Nanotechnology, 11, 845 (2016)

Proximity induced quantum anomalous Hall effect in graphene/EuO hetero-structures

Authors: Shanshan Su, Yafis Barlas, Roger K. Lake

Abstract: In a heterostructure of graphene and the ferromagnetic insulator EuO, the Eu atoms induce proximity exchange and inter-valley interactions in the graphene layer. Constrained by the lattice symmetries, and guided by ab initio calculations, a model Hamiltonian is constructed that describes the low-energy bands. Band parameters such as proximity induced exchange splitting, spin orbit coupling, and in… ▽ More In a heterostructure of graphene and the ferromagnetic insulator EuO, the Eu atoms induce proximity exchange and inter-valley interactions in the graphene layer. Constrained by the lattice symmetries, and guided by ab initio calculations, a model Hamiltonian is constructed that describes the low-energy bands. Band parameters such as proximity induced exchange splitting, spin orbit coupling, and inter-valley interaction are determined. Calculations of the Chern number identify the conditions under which the hetero-structures exhibit topologically non-trivial bands that give rise to the quantum anomalous Hall effect with a Hall conductivity of $σ_{xy} = 2 e^2/h$. △ Less

Submitted 21 September, 2015; originally announced September 2015.

Comments: 8 pages, 7 figures

Journal ref: Phys. Rev. B 95, 075418 (2017)

On the global structure of Kerr-de Sitter spacetimes

Authors: Kayll Lake, Thomas Zannias

Abstract: Taking advantage of the natural length scale set by the cosmological constant $Λ>0$, conditions on the parameters $(Λ, M, a^{2})$ have been found, so that a Kerr-de Sitter specetime either describes a black hole with well separated horizons, or describes degenerate configurations where two or more horizons coincide. As long as the rotation parameter $a^{2}$ is subject to the constraint… ▽ More Taking advantage of the natural length scale set by the cosmological constant $Λ>0$, conditions on the parameters $(Λ, M, a^{2})$ have been found, so that a Kerr-de Sitter specetime either describes a black hole with well separated horizons, or describes degenerate configurations where two or more horizons coincide. As long as the rotation parameter $a^{2}$ is subject to the constraint $a^{2}Λ\ll 1$, while the mass parameter $M$ is subject to: $ a^{2}[1+O(a^{2}Λ)^{2})] <M^{2}< \frac {1}{9Λ}[1+2a^{2}Λ+O(a^{2}Λ)^{2})]$, then a Kerr-de Sitter spacetime with such parameters, describes a black hole possessing an inner horizon separated from an outer horizon and the hole is embedded within a pair of cosmological horizons. Still for $a^{2}Λ\ll 1$, but assuming that either $M^{2}> \frac {1}{9Λ}[1+2a^{2}Λ+O(a^{2}Λ)^{2})]$ or $M^{2}< a^{2}[1+O(a^{2}Λ)^{2})]$, the Kerr-de Sitter spacetime describes a ring-like singularity enclosed by two cosmological horizons. A Kerr-de Sitter spacetime may also describe configurations where the inner, the outer and one of the cosmological horizons coincide. However, we found that this coalescence occurs provided $M^{2}Λ\sim 1$ and due to the observed smallness of $Λ$, these configurations are probably irrelevant in astrophysical settings. Extreme black holes, i.e. black holes where the inner horizon coincides with the outer black hole horizon are also admitted. We have found that in the limit $M^{2}Λ\ll 1$ and $a^{2}Λ\ll 1$, extreme black holes occur, provided $a^{2}=M^{2}(1+O(ΛM^{2}))$. Finally a coalescence between the outer and the cosmological horizon, although in principle possible, is likely to be unimportant at the astrophysical level, since this requires $M^{2}Λ\sim 1$. △ Less

Submitted 31 July, 2015; originally announced July 2015.

Comments: 10 pages

Journal ref: Phys. Rev. D 92, 084003 (2015)