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Exchange energy of the ferromagnetic electronic ground-state in a monolayer semiconductor
Authors:
Nadine Leisgang,
Dmitry Miserev,
Hinrich Mattiat,
Lukas Schneider,
Lukas Sponfeldner,
Kenji Watanabe,
Takashi Taniguchi,
Martino Poggio,
Richard J. Warburton
Abstract:
Mobile electrons in the semiconductor monolayer-MoS$_2$ form a ferromagnetic state at low temperature. The Fermi sea consists of two circles, one at the $K$-point, the other at the $\tilde{K}$-point, both with the same spin. Here, we present an optical experiment on gated MoS$_2$ at low electron-density in which excitons are injected with known spin and valley quantum numbers. The resulting trions…
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Mobile electrons in the semiconductor monolayer-MoS$_2$ form a ferromagnetic state at low temperature. The Fermi sea consists of two circles, one at the $K$-point, the other at the $\tilde{K}$-point, both with the same spin. Here, we present an optical experiment on gated MoS$_2$ at low electron-density in which excitons are injected with known spin and valley quantum numbers. The resulting trions are identified using a model which accounts for the injection process, the formation of antisymmetrized trion states, electron-hole scattering from one valley to the other, and recombination. The results are consistent with a complete spin polarization. From the splittings between different trion states, we measure the exchange energy, $Σ$, the energy required to flip a single spin within the ferromagnetic state, as well as the intervalley Coulomb exchange energy, $J$. We determine $Σ=11.2\,$meV and $J=5\,$meV at $n=1.5 \times 10^{12}\,$cm$^{-2}$, and find that $J$ depends strongly on the electron density, $n$.
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Submitted 3 November, 2023;
originally announced November 2023.
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Capacitively-coupled and inductively-coupled excitons in bilayer MoS$_2$
Authors:
Lukas Sponfeldner,
Nadine Leisgang,
Shivangi Shree,
Ioannis Paradisanos,
Kenji Watanabe,
Takashi Taniguchi,
Cedric Robert,
Delphine Lagarde,
Andrea Balocchi,
Xavier Marie,
Iann C. Gerber,
Bernhard Urbaszek,
Richard J. Warburton
Abstract:
The interaction of intralayer and interlayer excitons is studied in a two-dimensional semiconductor, homobilayer MoS$_2$. It is shown that the measured optical susceptibility reveals both the magnitude and the sign of the coupling constants. The interlayer exciton interacts capacitively with the intralayer B-exciton (positive coupling constant) consistent with hole tunnelling from one monolayer to…
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The interaction of intralayer and interlayer excitons is studied in a two-dimensional semiconductor, homobilayer MoS$_2$. It is shown that the measured optical susceptibility reveals both the magnitude and the sign of the coupling constants. The interlayer exciton interacts capacitively with the intralayer B-exciton (positive coupling constant) consistent with hole tunnelling from one monolayer to the other. Conversely, the interlayer exciton interacts inductively with the intralayer A-exciton (negative coupling constant). First-principles many-body calculations show that this coupling arises via an intravalley exchange-interaction of A- and B-excitons.
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Submitted 9 August, 2021;
originally announced August 2021.
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Giant Stark splitting of an exciton in bilayer MoS$_2$
Authors:
Nadine Leisgang,
Shivangi Shree,
Ioannis Paradisanos,
Lukas Sponfeldner,
Cedric Robert,
Delphine Lagarde,
Andrea Balocchi,
Kenji Watanabe,
Takashi Taniguchi,
Xavier Marie,
Richard J. Warburton,
Iann C. Gerber,
Bernhard Urbaszek
Abstract:
Transition metal dichalcogenides (TMDs) constitute a versatile platform for atomically thin optoelectronics devices and spin-valley memory applications. In monolayers optical absorption is strong, but the transition energy is not tunable as the neutral exciton has essentially no out-of-plane electric dipole. In contrast, interlayer exciton transitions in heterobilayers are widely tunable in applie…
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Transition metal dichalcogenides (TMDs) constitute a versatile platform for atomically thin optoelectronics devices and spin-valley memory applications. In monolayers optical absorption is strong, but the transition energy is not tunable as the neutral exciton has essentially no out-of-plane electric dipole. In contrast, interlayer exciton transitions in heterobilayers are widely tunable in applied electric fields, but their coupling to light is considerably reduced. Here, we show tuning over 120 meV of interlayer excitons with high oscillator strength in bilayer MoS2. These shifts are due to the quantum confined Stark effect, here the electron is localised to one of the layers yet the hole is delocalised across the bilayer. We optically probe the interaction between intra- and interlayer excitons as they are energetically tuned into resonance. This allows studying their mixing supported by beyond standard density functional theory calculations including excitonic effects. In MoS2 trilayers our experiments uncover two types of interlayer excitons with and without in-built electric dipoles, respectively. Highly tunable excitonic transitions with large oscillator strength and in-built dipoles, that lead to considerable exciton-exciton interactions, hold great promise for non-linear optics with polaritons.
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Submitted 18 June, 2021; v1 submitted 6 February, 2020;
originally announced February 2020.
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Controlling interlayer excitons in MoS2 layers grown by chemical vapor deposition
Authors:
Ioannis Paradisanos,
Shivangi Shree,
Antony George,
Nadine Leisgang,
Cedric Robert,
Kenji Watanabe,
Takashi Taniguchi,
Richard J. Warburton,
Andrey Turchanin,
Xavier Marie,
Iann C. Gerber,
Bernhard Urbaszek
Abstract:
Combining MoS$_2$ monolayers to form multilayers allows to access new functionalities. In this work, we examine the correlation between the stacking order and the interlayer coupling of valence states in MoS$_2$ homobilayer samples grown by chemical vapor deposition (CVD) and artificially stacked bilayers from CVD monolayers. We show that hole delocalization over the bilayer is allowed in 2H stack…
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Combining MoS$_2$ monolayers to form multilayers allows to access new functionalities. In this work, we examine the correlation between the stacking order and the interlayer coupling of valence states in MoS$_2$ homobilayer samples grown by chemical vapor deposition (CVD) and artificially stacked bilayers from CVD monolayers. We show that hole delocalization over the bilayer is allowed in 2H stacking and results in strong interlayer exciton absorption and also in a larger A-B exciton separation as compared to 3R bilayers, where both holes and electrons are confined to the individual layers. Comparing 2H and 3R reflectivity spectra allows to extract an interlayer coupling energy of about $t_\perp=49$ meV. Obtaining very similar results for as-grown and artificially stacked bilayers is promising for assembling large area van der Waals structures with CVD material, using interlayer exciton absorption and A-B exciton separation as indicators for interlayer coupling. Beyond DFT calculations including excitonic effects confirm signatures of efficient interlayer coupling for 2H stacking in agreement with our experiments.
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Submitted 24 January, 2020;
originally announced January 2020.
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First-order magnetic phase-transition of mobile electrons in monolayer MoS$_2$
Authors:
Jonas Gaël Roch,
Dmitry Miserev,
Guillaume Froehlicher,
Nadine Leisgang,
Lukas Sponfeldner,
Kenji Watanabe,
Takashi Taniguchi,
Jelena Klinovaja,
Daniel Loss,
Richard John Warburton
Abstract:
Evidence is presented for a first-order magnetic phase transition in a gated two-dimensional semiconductor, monolayer-MoS$_2$. The phase boundary separates a spin-polarised (ferromagnetic) phase at low electron density and a paramagnetic phase at high electron density. Abrupt changes in the optical response signal an abrupt change in the magnetism. The magnetic order is thereby controlled via the…
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Evidence is presented for a first-order magnetic phase transition in a gated two-dimensional semiconductor, monolayer-MoS$_2$. The phase boundary separates a spin-polarised (ferromagnetic) phase at low electron density and a paramagnetic phase at high electron density. Abrupt changes in the optical response signal an abrupt change in the magnetism. The magnetic order is thereby controlled via the voltage applied to the gate electrode of the device. Accompanying the change in magnetism is a large change in the electron effective mass.
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Submitted 22 November, 2019;
originally announced November 2019.
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Optical second harmonic generation in encapsulated single-layer InSe
Authors:
Nadine Leisgang,
Jonas G. Roch,
Guillaume Froehlicher,
Matthew Hamer,
Daniel Terry,
Roman Gorbachev,
Richard J. Warburton
Abstract:
We report the observation of optical second harmonic generation (SHG) in single-layer indium selenide (InSe). We measure a second harmonic signal of $>10^3$ $\textrm{cts/s}$ under nonresonant excitation using a home-built confocal microscope and a standard pulsed pico-second laser. We demonstrate that polarization-resolved SHG serves as a fast, non-invasive tool to determine the crystal axes in si…
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We report the observation of optical second harmonic generation (SHG) in single-layer indium selenide (InSe). We measure a second harmonic signal of $>10^3$ $\textrm{cts/s}$ under nonresonant excitation using a home-built confocal microscope and a standard pulsed pico-second laser. We demonstrate that polarization-resolved SHG serves as a fast, non-invasive tool to determine the crystal axes in single-layer InSe and to relate the sharp edges of the flake to the armchair and zigzag edges of the crystal structure. Our experiment determines these angles to an accuracy better than $\pm$ $0.2^{\circ}$. Treating the two-dimensional material as a nonlinear polarizable sheet, we determine a second-order nonlinear sheet polarizability $| χ_{\textrm{sheet}}^{(2)}|=(17.9 \pm 11.0)\times 10^{-20}$ $\textrm{m}^2 \textrm{V}^{-1}$ for single-layer InSe, corresponding to an effective nonlinear susceptibility value of $| χ_\textrm{eff}^{(2)}| \approx (223 \pm 138) \times 10^{-12}$ $\textrm{m} \textrm{V}^{-1}$ accounting for the sheet thickness ($\textrm{d} \approx 0.8$ $\textrm{nm}$). We demonstrate that the SHG technique can also be applied to encapsulated samples to probe their crystal orientations. The method is therefore suitable for creating high quality van der Waals heterostructures with control over the crystal directions.
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Submitted 17 August, 2018;
originally announced August 2018.
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Spin-Polarized Electrons in Monolayer MoS$_2$
Authors:
Jonas G. Roch,
Guillaume Froehlicher,
Nadine Leisgang,
Peter Makk,
Kenji Watanabe,
Takashi Taniguchi,
Richard J. Warburton
Abstract:
The optical susceptibility is a local, minimally-invasive and spin-selective probe of the ground state of a two-dimensional electron gas. We apply this probe to a gated monolayer of MoS$_2$. We demonstrate that the electrons are spin polarized. Of the four available bands, only two are occupied. These two bands have the same spin but different valley quantum numbers. We argue that strong Coulomb i…
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The optical susceptibility is a local, minimally-invasive and spin-selective probe of the ground state of a two-dimensional electron gas. We apply this probe to a gated monolayer of MoS$_2$. We demonstrate that the electrons are spin polarized. Of the four available bands, only two are occupied. These two bands have the same spin but different valley quantum numbers. We argue that strong Coulomb interactions are a key aspect of this spontaneous symmetry breaking. The Bohr radius is so small that even electrons located far apart in phase space interact, facilitating exchange couplings to align the spins.
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Submitted 17 July, 2018;
originally announced July 2018.
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Quantum confined Stark effect in a MoS$_2$ monolayer van der Waals heterostructure
Authors:
Jonas G. Roch,
Nadine Leisgang,
Guillaume Froehlicher,
Peter Makk,
Kenji Watanabe,
Takashi Taniguchi,
Christian Schönenberger,
Richard J. Warburton
Abstract:
The optics of dangling-bond-free van der Waals heterostructures containing transition metal dichalcogenides are dominated by excitons. A crucial property of a confined exciton is the quantum confined Stark effect (QCSE). Here, such a heterostructure is used to probe the QCSE by applying a uniform vertical electric field across a molybdenum disulfide (MoS$_2$) monolayer. The photoluminescence emiss…
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The optics of dangling-bond-free van der Waals heterostructures containing transition metal dichalcogenides are dominated by excitons. A crucial property of a confined exciton is the quantum confined Stark effect (QCSE). Here, such a heterostructure is used to probe the QCSE by applying a uniform vertical electric field across a molybdenum disulfide (MoS$_2$) monolayer. The photoluminescence emission energies of the neutral and charged excitons shift quadratically with the applied electric field provided the electron density remains constant, demonstrating that the exciton can be polarized. Stark shifts corresponding to about half the homogeneous linewidth were achieved. Neutral and charged exciton polarizabilities of $(7.8~\pm~1.0)\times 10^{-10}~\tr{D~m~V}^{-1}$ and $(6.4~\pm~0.9)\times 10^{-10}~\tr{D~m~V}^{-1}$ at relatively low electron density ($8 \times 10^{11}~\tr{cm}^{-2}$) have been extracted, respectively. These values are one order of magnitude lower than the previously reported values, but in line with theoretical calculations. The methodology presented here is versatile and can be applied to other semiconducting layered materials as well.
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Submitted 26 October, 2017;
originally announced October 2017.
