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A Search for Low-mass Dark Matter via Bremsstrahlung Radiation and the Migdal Effect in SuperCDMS
Authors:
M. F. Albakry,
I. Alkhatib,
D. Alonso,
D. W. P. Amaral,
T. Aralis,
T. Aramaki,
I. J. Arnquist,
I. Ataee Langroudy,
E. Azadbakht,
S. Banik,
C. Bathurst,
R. Bhattacharyya,
P. L. Brink,
R. Bunker,
B. Cabrera,
R. Calkins,
R. A. Cameron,
C. Cartaro,
D. G. Cerdeño,
Y. -Y. Chang,
M. Chaudhuri,
R. Chen,
N. Chott,
J. Cooley,
H. Coombes
, et al. (108 additional authors not shown)
Abstract:
We present a new analysis of previously published of SuperCDMS data using a profile likelihood framework to search for sub-GeV dark matter (DM) particles through two inelastic scattering channels: bremsstrahlung radiation and the Migdal effect. By considering these possible inelastic scattering channels, experimental sensitivity can be extended to DM masses that are undetectable through the DM-nuc…
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We present a new analysis of previously published of SuperCDMS data using a profile likelihood framework to search for sub-GeV dark matter (DM) particles through two inelastic scattering channels: bremsstrahlung radiation and the Migdal effect. By considering these possible inelastic scattering channels, experimental sensitivity can be extended to DM masses that are undetectable through the DM-nucleon elastic scattering channel, given the energy threshold of current experiments. We exclude DM masses down to $220~\textrm{MeV}/c^2$ at $2.7 \times 10^{-30}~\textrm{cm}^2$ via the bremsstrahlung channel. The Migdal channel search provides overall considerably more stringent limits and excludes DM masses down to $30~\textrm{MeV}/c^2$ at $5.0 \times 10^{-30}~\textrm{cm}^2$.
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Submitted 17 February, 2023;
originally announced February 2023.
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Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers
Authors:
Maciej R. Molas,
Anastasia V. Tyurnina,
Viktor Zólyomi,
Anna K. Ott,
Daniel J. Terry,
Matthew J. Hamer,
Celal Yelgel,
Adam Babiński,
Albert G. Nasibulin,
Andrea C. Ferrari,
Vladimir I. Fal'ko,
Roman Gorbachev
Abstract:
III-VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-depe…
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III-VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-dependence of both intralayer vibrations within each atomic layer, as well as of the interlayer shear and layer breathing modes. A linear chain model can be used to describe the evolution of the peak positions as a function of N, consistent with first principles calculations.
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Submitted 6 March, 2020;
originally announced March 2020.
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Design of van der Waals Interfaces for Broad-Spectrum Optoelectronics
Authors:
Nicolas Ubrig,
Evgeniy Ponomarev,
Johanna Zultak,
Daniil Domaretskiy,
Viktor Zólyomi,
Daniel Terry,
James Howarth,
Ignacio Gutiérrez-Lezama,
Alexander Zhukov,
Zakhar R. Kudrynskyi,
Zakhar D. Kovalyuk,
Amalia Patanè,
Takashi Taniguchi,
Kenji Watanabe,
Roman V. Gorbachev,
Vladimir I. Fal'ko,
Alberto F. Morpurgo
Abstract:
Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into interfaces and heterostructures. Their potential for optoelectronics stems from the possibility to tailor the spectral response over a broad range by exploiting interlayer transitions between different compounds with an app…
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Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into interfaces and heterostructures. Their potential for optoelectronics stems from the possibility to tailor the spectral response over a broad range by exploiting interlayer transitions between different compounds with an appropriate band-edge alignment. For the interlayer transitions to be radiative, however, a serious challenge comes from details of the materials --such as lattice mismatch or even a small misalignment of the constituent layers-- that can drastically suppress the electron-photon coupling. The problem was evidenced in recent studies of heterostructures of monolayer transition metal dichalcogenides, whose band edges are located at the K-point of reciprocal space. Here we demonstrate experimentally that the solution to the interlayer coupling problem is to engineer type-II interfaces by assembling atomically thin crystals that have the bottom of the conduction band and the top of the valence band at the $Γ$-point, thus avoiding any momentum mismatch. We find that this type of vdW interfaces exhibits radiative optical transition irrespective of lattice constant, rotational/translational alignment of the two layers, or whether the constituent materials are direct or indirect gap semiconductors. The result, which is robust and of general validity, drastically broadens the scope of future optoelectronics device applications based on 2D materials.
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Submitted 4 February, 2020; v1 submitted 21 December, 2019;
originally announced December 2019.
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Enhanced superconductivity in few-layer TaS$_2$ due to healing by oxygenation
Authors:
J. Bekaert,
E. Khestanova,
D. G. Hopkinson,
J. Birkbeck,
N. Clark,
M. Zhu,
D. A. Bandurin,
R. Gorbachev,
S. Fairclough,
Y. Zou,
M. Hamer,
D. J. Terry,
J. J. P. Peters,
A. M. Sanchez,
B. Partoens,
S. J. Haigh,
M. V. Milošević,
I. V. Grigorieva
Abstract:
When approaching the atomically thin limit, defects and disorder play an increasingly important role in the properties of two-dimensional materials. Superconductivity is generally thought to be vulnerable to these effects, but here we demonstrate the contrary in the case of oxygenation of ultrathin tantalum disulfide (TaS$_2$). Our first-principles calculations show that incorporation of oxygen in…
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When approaching the atomically thin limit, defects and disorder play an increasingly important role in the properties of two-dimensional materials. Superconductivity is generally thought to be vulnerable to these effects, but here we demonstrate the contrary in the case of oxygenation of ultrathin tantalum disulfide (TaS$_2$). Our first-principles calculations show that incorporation of oxygen into the TaS$_2$ crystal lattice is energetically favourable and effectively heals sulfur vacancies typically present in these crystals, thus restoring the carrier density to the intrinsic value of TaS$_2$. Strikingly, this leads to a strong enhancement of the electron-phonon coupling, by up to 80% in the highly-oxygenated limit. Using transport measurements on fresh and aged (oxygenated) few-layer TaS$_2$, we found a marked increase of the superconducting critical temperature ($T_{\mathrm{c}}$) upon aging, in agreement with our theory, while concurrent electron microscopy and electron-energy loss spectroscopy confirmed the presence of sulfur vacancies in freshly prepared TaS$_2$ and incorporation of oxygen into the crystal lattice with time. Our work thus reveals the mechanism by which certain atomic-scale defects can be beneficial to superconductivity and opens a new route to engineer $T_{\mathrm{c}}$ in ultrathin materials.
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Submitted 16 December, 2019;
originally announced December 2019.
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Resonantly hybridised excitons in moiré superlattices in van der Waals heterostructures
Authors:
Evgeny M. Alexeev,
David A. Ruiz-Tijerina,
Mark Danovich,
Matthew J. Hamer,
Daniel J. Terry,
Pramoda K. Nayak,
Seongjoon Ahn,
Sangyeon Pak,
Juwon Lee,
Jung Inn Sohn,
Maciej R. Molas,
Maciej Koperski,
Kenji Watanabe,
Takashi Taniguchi,
Kostya S. Novoselov,
Roman V. Gorbachev,
Hyeon Suk Shin,
Vladimir I. Fal'ko,
Alexander I. Tartakovskii
Abstract:
Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation. A profound consequence of using these degrees of freedom is the emergence of an overarching periodicity in the local atomic registry of the constitu…
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Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation. A profound consequence of using these degrees of freedom is the emergence of an overarching periodicity in the local atomic registry of the constituent crystal structures, known as a moiré superlattice. Its presence in graphene/hexagonal boron nitride (hBN) structures led to the observation of electronic minibands, whereas its effect enhanced by interlayer resonant conditions in twisted graphene bilayers culminated in the observation of the superconductor-insulator transition at magic twist angles. Here, we demonstrate that, in semiconducting heterostructures built of incommensurate MoSe2 and WS2 monolayers, excitonic bands can hybridise, resulting in the resonant enhancement of the moiré superlattice effects. MoSe2 and WS2 are specifically chosen for the near degeneracy of their conduction band edges to promote the hybridisation of intra- and interlayer excitons, which manifests itself through a pronounced exciton energy shift as a periodic function of the interlayer rotation angle. This occurs as hybridised excitons (hX) are formed by holes residing in MoSe2 bound to a twist-dependent superposition of electron states in the adjacent monolayers. For heterostructures with almost aligned pairs of monolayer crystals, resonant mixing of the electron states leads to pronounced effects of the heterostructure's geometrical moiré pattern on the hX dispersion and optical spectrum. Our findings underpin novel strategies for band-structure engineering in semiconductor devices based on van der Waals heterostructures.
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Submitted 12 April, 2019;
originally announced April 2019.
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Indirect to direct gap crossover in two-dimensional InSe revealed by ARPES
Authors:
Matthew Hamer,
Johanna Zultak,
Anastasia V. Tyurnina,
Viktor Zólyomi,
Daniel Terry,
Alexei Barinov,
Alistair Garner,
Jack Donoghue,
Aidan P. Rooney,
Viktor Kandyba,
Alessio Giampietri,
Abigail J. Graham,
Natalie C. Teutsch,
Xue Xia,
Maciej Koperski,
Sarah J. Haigh,
Vladimir I. Fal'ko,
Roman Gorbachev,
Neil R. Wilson
Abstract:
Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of their band gap as a function of the number of layers in the crystal [1-4] and, specifically for InSe, an earlier predicted crossover from a direct gap in the bulk [5,6] to a weakly indirect band gap in monolayers and bilaye…
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Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of their band gap as a function of the number of layers in the crystal [1-4] and, specifically for InSe, an earlier predicted crossover from a direct gap in the bulk [5,6] to a weakly indirect band gap in monolayers and bilayers [7-11]. Here, we apply angle resolved photoemission spectroscopy with submicrometer spatial resolution ($μ$ARPES) to visualise the layer-dependent valence band structure of mechanically exfoliated crystals of InSe. We show that for 1 layer and 2 layer InSe the valence band maxima are away from the $\mathbfΓ$-point, forming an indirect gap, with the conduction band edge known to be at the $\mathbfΓ$-point. In contrast, for six or more layers the bandgap becomes direct, in good agreement with theoretical predictions. The high-quality monolayer and bilayer samples enables us to resolve, in the photoluminescence spectra, the band-edge exciton (A) from the exciton (B) involving holes in a pair of deeper valence bands, degenerate at $\mathbfΓ$, with the splitting that agrees with both $μ$ARPES data and the results of DFT modelling. Due to the difference in symmetry between these two valence bands, light emitted by the A-exciton should be predominantly polarised perpendicular to the plane of the two-dimensional crystal, which we have verified for few-layer InSe crystals.
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Submitted 21 January, 2019;
originally announced January 2019.
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Infrared-to-violet tunable optical activity in atomic films of GaSe, InSe, and their heterostructures
Authors:
Daniel J. Terry,
Viktor Zólyomi,
Matthew Hamer,
Anastasia V. Tyurnina,
David G. Hopkinson,
Alexander M. Rakowski,
Samuel J. Magorrian,
Nick Clark,
Yuri M. Andreev,
Olga Kazakova,
Konstantin Novoselov,
Sarah J. Haigh,
Vladimir I. Fal'ko,
Roman Gorbachev
Abstract:
Two-dimensional semiconductors - atomic layers of materials with covalent intra-layer bonding and weak (van der Waals or quadrupole) coupling between the layers - are a new class of materials with great potential for optoelectronic applications. Among those, a special position is now being taken by post-transition metal chalcogenides (PTMC), InSe and GaSe. It has recently been found that the band…
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Two-dimensional semiconductors - atomic layers of materials with covalent intra-layer bonding and weak (van der Waals or quadrupole) coupling between the layers - are a new class of materials with great potential for optoelectronic applications. Among those, a special position is now being taken by post-transition metal chalcogenides (PTMC), InSe and GaSe. It has recently been found that the band gap in 2D crystals of InSe more than doubles in the monolayer compared to thick multilayer crystals, while the high mobility of conduction band electrons is promoted by their light in-plane mass. Here, we use Raman and PL measurements of encapsulated few layer samples, coupled with accurate atomic force and transmission electron microscope structural characterisation to reveal new optical properties of atomically thin GaSe preserved by hBN encapsulation. The band gaps we observe complement the spectral range provided by InSe films, so that optical activity of these two almost lattice-matched PTMC films and their heterostructures densely cover the spectrum of photons from violet to infrared. We demonstrate the realisation of the latter by the first observation of interlayer excitonic photoluminescence in few-layer InSe-GaSe heterostructures. The spatially indirect transition is direct in k-space and therefore is bright, while its energy can be tuned in a broad range by the number of layers.
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Submitted 3 October, 2018;
originally announced October 2018.
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Optical second harmonic generation in encapsulated single-layer InSe
Authors:
Nadine Leisgang,
Jonas G. Roch,
Guillaume Froehlicher,
Matthew Hamer,
Daniel Terry,
Roman Gorbachev,
Richard J. Warburton
Abstract:
We report the observation of optical second harmonic generation (SHG) in single-layer indium selenide (InSe). We measure a second harmonic signal of $>10^3$ $\textrm{cts/s}$ under nonresonant excitation using a home-built confocal microscope and a standard pulsed pico-second laser. We demonstrate that polarization-resolved SHG serves as a fast, non-invasive tool to determine the crystal axes in si…
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We report the observation of optical second harmonic generation (SHG) in single-layer indium selenide (InSe). We measure a second harmonic signal of $>10^3$ $\textrm{cts/s}$ under nonresonant excitation using a home-built confocal microscope and a standard pulsed pico-second laser. We demonstrate that polarization-resolved SHG serves as a fast, non-invasive tool to determine the crystal axes in single-layer InSe and to relate the sharp edges of the flake to the armchair and zigzag edges of the crystal structure. Our experiment determines these angles to an accuracy better than $\pm$ $0.2^{\circ}$. Treating the two-dimensional material as a nonlinear polarizable sheet, we determine a second-order nonlinear sheet polarizability $| χ_{\textrm{sheet}}^{(2)}|=(17.9 \pm 11.0)\times 10^{-20}$ $\textrm{m}^2 \textrm{V}^{-1}$ for single-layer InSe, corresponding to an effective nonlinear susceptibility value of $| χ_\textrm{eff}^{(2)}| \approx (223 \pm 138) \times 10^{-12}$ $\textrm{m} \textrm{V}^{-1}$ accounting for the sheet thickness ($\textrm{d} \approx 0.8$ $\textrm{nm}$). We demonstrate that the SHG technique can also be applied to encapsulated samples to probe their crystal orientations. The method is therefore suitable for creating high quality van der Waals heterostructures with control over the crystal directions.
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Submitted 17 August, 2018;
originally announced August 2018.
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Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures
Authors:
Matthew Hamer,
Endre Tóvári,
Mengjian Zhu,
Michael D. Thompson,
Alexander Mayorov,
Jonathon Prance,
Yongjin Lee,
Richard P. Haley,
Zakhar R. Kudrynskyi,
Amalia Patanè,
Daniel Terry,
Zakhar D. Kovalyuk,
Klaus Ensslin,
Andrey V. Kretinin,
Andre Geim,
Roman Gorbachev
Abstract:
Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gati…
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Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.
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Submitted 15 May, 2018;
originally announced May 2018.
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Meaning of the nuclear wave function
Authors:
John D. Terry,
Gerald A. Miller
Abstract:
Background The intense current experimental interest in studying the structure of the deuteron and using it to enable accurate studies of neutron structure motivate us to examine the four-dimensional space-time nature of the nuclear wave function, and the various approximations used to reduce it to an object that depends only on three spatial variables.
Purpose: The aim is to determine if the ab…
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Background The intense current experimental interest in studying the structure of the deuteron and using it to enable accurate studies of neutron structure motivate us to examine the four-dimensional space-time nature of the nuclear wave function, and the various approximations used to reduce it to an object that depends only on three spatial variables.
Purpose: The aim is to determine if the ability to understand and analyze measured experimental cross sections is compromised by making the reduction from four to three dimensions.
Method: Simple, exactly-calculable, covariant models of a bound-state wave state wave function (a scalar boson made of two constituent-scalar bosons) with parameters chosen to represent a deuteron are used to investigate the accuracy of using different approximations to the nuclear wave function to compute the quasi-elastic scattering cross section. Four different versions of the wave function are defined (light-front spectator, light-front, light-front with scaling and non-relativistic) and used to compute the cross sections as a function of how far off the mass-shell (how virtual) is the struck constituent.
Results: We show that making an exact calculation of the quasi-elastic scattering cross section involves using the light-front spectator wave function. All of the other approaches fail to reproduce the model exact calculation if the value of Bjorken $x$ differs from unity. The model is extended to consider an essential effect of spin to show that constituent nucleons cannot be treated as being on their mass shell even when taking the matrix element of a `good' current.
Conclusions: It is necessary to develop realistic light-front spectator wave functions to meet the needs of current and planned experiments.
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Submitted 22 March, 2016;
originally announced March 2016.
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Whole Earth Telescope Observations of the subdwarf B star KPD 1930+2752: A rich, short period pulsator in a close binary
Authors:
M. D. Reed,
S. L. Harms,
S. Poindexter,
A. -Y. Zhou,
J. R. Eggen,
M. A. Morris,
A. C. Quint,
S. McDaniel,
A. Baran,
N. Dolez,
S. D. Kawaler,
D. W. Kurtz,
P. Moskalik,
R. Riddle,
S. Zola,
R. H. Ostensen,
J. -E. Solheim,
S. O. Kepler,
A. F. M. Costa,
J. L. Provencal,
F. Mullally,
D. W. Winget,
M. Vuckovic,
R. Crowe,
D. Terry
, et al. (36 additional authors not shown)
Abstract:
KPD 1930+2752 is a short-period pulsating subdwarf B (sdB) star. It is also an ellipsoidal variable with a known binary period just over two hours. The companion is most likely a white dwarf and the total mass of the system is close to the Chandresakhar limit. In this paper we report the results of Whole Earth Telescope (WET) photometric observations during 2003 and a smaller multisite campaign fr…
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KPD 1930+2752 is a short-period pulsating subdwarf B (sdB) star. It is also an ellipsoidal variable with a known binary period just over two hours. The companion is most likely a white dwarf and the total mass of the system is close to the Chandresakhar limit. In this paper we report the results of Whole Earth Telescope (WET) photometric observations during 2003 and a smaller multisite campaign from 2002. From 355 hours of WET data, we detect 68 pulsation frequencies and suggest an additional 13 frequencies within a crowded and complex temporal spectrum between 3065 and 6343 $μ$Hz (periods between 326 and 157 s). We examine pulsation properties including phase and amplitude stability in an attempt to understand the nature of the pulsation mechanism. We examine a stochastic mechanism by comparing amplitude variations with simulated stochastic data. We also use the binary nature of KPD 1930+2752 for identifying pulsation modes via multiplet structure and a tidally-induced pulsation geometry. Our results indicate a complicated pulsation structure that includes short-period ($\approx 16$ h) amplitude variability, rotationally split modes, tidally-induced modes, and some pulsations which are geometrically limited on the sdB star.
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Submitted 10 November, 2010; v1 submitted 1 November, 2010;
originally announced November 2010.
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The pulsating hot subdwarf Balloon 090100001: results of the 2005 multisite campaign
Authors:
A. Baran,
R. Oreiro,
A. Pigulski,
F. Perez Hernandez,
A. Ulla,
M. D. Reed,
C. Rodriguez-Lopez,
P. Moskalik,
S. -L. Kim,
W. -P. Chen,
R. Crowe,
M. Siwak,
L. Armendarez,
P. M. Binder,
K. -J. Choo,
A. Dye,
J. R. Eggen,
R. Garrido,
J. M. Gonzalez Perez,
S. L. Harms,
F. -Y. Huang,
D. Koziel,
H. -T. Lee,
J. MacDonald,
L. Fox Machado
, et al. (6 additional authors not shown)
Abstract:
We present the results of a multisite photometric campaign on the pulsating sdB star Balloon 090100001. The star is one of the two known hybrid hot subdwarfs with both long- and short-period oscillations. The campaign involved eight telescopes with three obtaining UBVR data, four B-band data, and one Stromgren uvby photometry. The campaign covered 48 nights, providing a temporal resolution of 0.…
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We present the results of a multisite photometric campaign on the pulsating sdB star Balloon 090100001. The star is one of the two known hybrid hot subdwarfs with both long- and short-period oscillations. The campaign involved eight telescopes with three obtaining UBVR data, four B-band data, and one Stromgren uvby photometry. The campaign covered 48 nights, providing a temporal resolution of 0.36microHz with a detection threshold of about 0.2mmag in B-filter data.
Balloon 090100001 has the richest pulsation spectrum of any known pulsating subdwarf B star and our analysis detected 114 frequencies including 97 independent and 17 combination ones. The strongest mode (f_1) in the 2.8mHz region is most likely radial while the remaining ones in this region form two nearly symmetric multiplets: a triplet and quintuplet, attributed to rotationally split \ell=1 and 2 modes, respectively. We find clear increases of splitting in both multiplets between the 2004 and 2005 observing campaigns, amounting to 15% on average. The observed splittings imply that the rotational rate in Bal09 depends on stellar latitude and is the fastest on the equator. We use a small grid of models to constrain the main mode (f_1), which most likely represents the radial fundamental pulsation. The groups of p-mode frequencies appear to lie in the vicinity of consecutive radial overtones, up to the third one. Despite the large number of g-mode frequencies observed, we failed to identify them, most likely because of the disruption of asymptotic behaviour by mode trapping. The observed frequencies were not, however, fully exploited in terms of seismic analysis which should be done in the future with a larger grid of reliable evolutionary models of hot subdwarfs.
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Submitted 22 October, 2008;
originally announced October 2008.
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Asteroseismology of the Beta Cephei star 12 (DD) Lacertae: photometric observations, pulsational frequency analysis and mode identification
Authors:
G. Handler,
M. Jerzykiewicz,
E. Rodriguez,
K. Uytterhoeven,
P. J. Amado,
T. N. Dorokhova,
N. I. Dorokhov,
E. Poretti,
J. -P. Sareyan,
L. Parrao,
D. Lorenz,
D. Zsuffa,
R. Drummond,
J. Daszynska-Daszkiewicz,
T. Verhoelst,
J. De Ridder,
B. Acke,
P. -O. Bourge,
A. I. Movchan,
R. Garrido,
M. Paparo,
T. Sahin,
V. Antoci,
S. N. Udovichenko,
K. Csorba
, et al. (6 additional authors not shown)
Abstract:
We report a multisite photometric campaign for the Beta Cephei star 12 Lacertae. 750 hours of high-quality differential photoelectric Stromgren, Johnson and Geneva time-series photometry were obtained with 9 telescopes during 190 nights. Our frequency analysis results in the detection of 23 sinusoidal signals in the light curves. Eleven of those correspond to independent pulsation modes, and the…
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We report a multisite photometric campaign for the Beta Cephei star 12 Lacertae. 750 hours of high-quality differential photoelectric Stromgren, Johnson and Geneva time-series photometry were obtained with 9 telescopes during 190 nights. Our frequency analysis results in the detection of 23 sinusoidal signals in the light curves. Eleven of those correspond to independent pulsation modes, and the remainder are combination frequencies. We find some slow aperiodic variability such as that seemingly present in several Beta Cephei stars. We perform mode identification from our colour photometry, derive the spherical degree l for the five strongest modes unambiguously and provide constraints on l for the weaker modes. We find a mixture of modes of 0 <= l <= 4. In particular, we prove that the previously suspected rotationally split triplet within the modes of 12 Lac consists of modes of different l; their equal frequency splitting must thus be accidental.
One of the periodic signals we detected in the light curves is argued to be a linearly stable mode excited to visible amplitude by nonlinear mode coupling via a 2:1 resonance. We also find a low-frequency signal in the light variations whose physical nature is unclear; it could be a parent or daughter mode resonantly coupled. The remaining combination frequencies are consistent with simple light-curve distortions.
The range of excited pulsation frequencies of 12 Lac may be sufficiently large that it cannot be reproduced by standard models. We suspect that the star has a larger metal abundance in the pulsational driving zone, a hypothesis also capable of explaining the presence of Beta Cephei stars in the LMC.
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Submitted 11 October, 2005;
originally announced October 2005.