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Control of proton transport and hydrogenation in double-gated graphene
Authors:
J. Tong,
Y. Fu,
D. Domaretskiy,
F. Della Pia,
P. Dagar,
L. Powell,
D. Bahamon,
S. Huang,
B. Xin,
R. N. Costa Filho,
L. F. Vega,
I. V. Grigorieva,
F. M. Peeters,
A. Michaelides,
M. Lozada-Hidalgo
Abstract:
The basal plane of graphene can function as a selective barrier that is permeable to protons but impermeable to all ions and gases, stimulating its use in applications such as membranes, catalysis and isotope separation. Protons can chemically adsorb on graphene and hydrogenate it, inducing a conductor-insulator transition that has been explored intensively in graphene electronic devices. However,…
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The basal plane of graphene can function as a selective barrier that is permeable to protons but impermeable to all ions and gases, stimulating its use in applications such as membranes, catalysis and isotope separation. Protons can chemically adsorb on graphene and hydrogenate it, inducing a conductor-insulator transition that has been explored intensively in graphene electronic devices. However, both processes face energy barriers and various strategies have been proposed to accelerate proton transport, for example by introducing vacancies, incorporating catalytic metals or chemically functionalizing the lattice. However, these techniques can compromise other properties, such as ion selectivity or mechanical stability. Here we show that independent control of the electric field, E, at around 1 V nm-1, and charge-carrier density, n, at around 1 x 10^14 cm-2, in double-gated graphene allows the decoupling of proton transport from lattice hydrogenation and can thereby accelerate proton transport such that it approaches the limiting electrolyte current for our devices. Proton transport and hydrogenation can be driven selectively with precision and robustness, enabling proton-based logic and memory graphene devices that have on-off ratios spanning orders of magnitude. Our results show that field effects can accelerate and decouple electrochemical processes in double-gated 2D crystals and demonstrate the possibility of mapping such processes as a function of E and n, which is a new technique for the study of 2D electrode-electrolyte interfaces.
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Submitted 25 April, 2024; v1 submitted 10 April, 2024;
originally announced April 2024.
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Full control of solid-state electrolytes for electrostatic gating
Authors:
Chuanwu Cao,
Margherita Melegari,
Marc Philippi,
Daniil Domaretskiy,
Nicolas Ubrig,
Ignacio Gutiérrez-Lezama,
Alberto F. Morpurgo
Abstract:
Ionic gating is a powerful technique to realize field-effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top-electrolyte gates, which pose experimental constraints and make device fabrication complex. Promising results obtained recently in FETs based on solid-state electrolytes remain plagued by spurious phenomena of unknown origin,…
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Ionic gating is a powerful technique to realize field-effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top-electrolyte gates, which pose experimental constraints and make device fabrication complex. Promising results obtained recently in FETs based on solid-state electrolytes remain plagued by spurious phenomena of unknown origin, preventing proper transistor operation, and causing limited control and reproducibility. Here we explore a class of solid-state electrolytes for gating (Lithium-ion conducting glass-ceramics, LICGCs), identify the processes responsible for the spurious phenomena and irreproducible behavior,and demonstrate properly functioning transistors exhibiting high density ambipolar operation with gate capacitance of ~20-50 $μ$F/cm$^2$ (depending on the polarity of the accumulated charges). Using two-dimensional semiconducting transition-metal dichalcogenides we demonstrate the ability to implement ionic-gate spectroscopy to determine the semiconducting bandgap, and to accumulate electron densities above 10$^{14}$ cm$^{-2}$, resulting in gate-induced superconductivity in MoS$_2$ multilayers. As LICGCs are implemented in a back-gate configuration, they leave the surface of the material exposed, enabling the use of surface-sensitive techniques (such as scanning tunneling microscopy and photoemission spectroscopy) impossible so far in ionic-liquid gated devices. They also allow double ionic gated devices providing independent control of charge density and electric field.
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Submitted 23 February, 2023;
originally announced February 2023.
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Light sources with bias tunable spectrum based on van der Waals interface transistors
Authors:
Hugo Henck,
Diego Mauro,
Daniil Domaretskiy,
Marc Philippi,
Shahriar Memaran,
Wenkai Zheng,
Zhengguang Lu,
Dmitry Shcherbakov,
Chun Ning Lau,
Dmitry Smirnov,
Luis Balicas,
Kenji Watanabe,
Vladimir I. Fal'ko,
Ignacio Gutiérrez-Lezama,
Nicolas Ubrig,
Alberto F. Morpurgo
Abstract:
Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broa…
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Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broad electrical tuning of the spectrum of electroluminescent devices remains challenging. Here, we propose light-emitting field-effect transistors based on van der Waals interfaces of atomically thin semiconductors as a promising class of devices to achieve this goal. We demonstrate that large spectral changes in room-temperature electroluminescence can be controlled both at the device assembly stage -- by suitably selecting the material forming the interfaces -- and on-chip, by changing the bias to modify the device operation point. Even though the precise relation between device bias and kinetics of the radiative transitions remains to be understood, our experiments show that the physical mechanism responsible for light emission is robust, making these devices compatible with simple large areas device production methods.
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Submitted 8 July, 2022; v1 submitted 4 January, 2022;
originally announced January 2022.
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Quenching the band gap of 2D semiconductors with a perpendicular electric field
Authors:
Daniil Domaretskiy,
Marc Philippi,
Marco Gibertini,
Nicolas Ubrig,
Ignacio Gutiérrez-Lezama,
Alberto F. Morpurgo
Abstract:
The electronic band structure of atomically thin semiconductors can be tuned by the application of a perpendicular electric field. The principle was demonstrated experimentally shortly after the discovery of graphene by opening a finite band gap in graphene bilayers, which naturally are zero-gap semiconductors. So far, however, the same principle could not be employed to control a broader class of…
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The electronic band structure of atomically thin semiconductors can be tuned by the application of a perpendicular electric field. The principle was demonstrated experimentally shortly after the discovery of graphene by opening a finite band gap in graphene bilayers, which naturally are zero-gap semiconductors. So far, however, the same principle could not be employed to control a broader class of materials, because the required electric fields are beyond reach in current devices. To overcome this limitation, we have realized double ionic gated transistors that enable the application of very large electric fields. Using these devices, we show that the band gap of few-layer semiconducting transition metal dichalcogenides can be continuously suppressed from 1.5 eV to zero. Our results illustrate an unprecedented level of control of the band structures of 2D semiconductors, which is important for future research and applications.
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Submitted 13 August, 2021;
originally announced August 2021.
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Identifying atomically thin crystals with diffusively reflected light
Authors:
D. Domaretskiy,
N. Ubrig,
I. Gutiérrez-Lezama,
M. K. Tran,
A. F. Morpurgo
Abstract:
The field of two-dimensional materials has been developing at an impressive pace, with atomically thin crystals of an increasing number of different compounds that have become available, together with techniques enabling their assembly into functional heterostructures. The strategy to detect these atomically thin crystals has however remained unchanged since the discovery of graphene. Such an abse…
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The field of two-dimensional materials has been developing at an impressive pace, with atomically thin crystals of an increasing number of different compounds that have become available, together with techniques enabling their assembly into functional heterostructures. The strategy to detect these atomically thin crystals has however remained unchanged since the discovery of graphene. Such an absence of evolution is starting to pose problems because for many of the 2D materials of current interest the optical contrast provided by the commonly used detection procedure is insufficient to identify the presence of individual monolayers or to determine unambiguously the thickness of atomically thin multilayers. Here we explore an alternative detection strategy, in which the enhancement of optical contrast originates from the use of optically inhomogeneous substrates, leading to diffusively reflected light. Owing to its peculiar polarization properties and to its angular distribution, diffusively reflected light allows a strong contrast enhancement to be achieved through the implementation of suitable illumination-detection schemes. We validate this conclusion by carrying out a detailed quantitative analysis of optical contrast, which fully reproduces our experimental observations on over 60 WSe$_2$ mono-, bi-, and trilayers. We further validate the proposed strategy by extending our analysis to atomically thin phosphorene, InSe, and graphene crystals. Our conclusion is that the use of diffusively reflected light to detect and identify atomically thin layers is an interesting alternative to the common detection scheme based on Fabry-Perot interference, because it enables atomically thin layers to be detected on substrates others than the commonly used Si/SiO$_2$, and it may offer higher sensitivity depending on the specific 2D material considered.
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Submitted 23 June, 2021;
originally announced June 2021.
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Design of van der Waals Interfaces for Broad-Spectrum Optoelectronics
Authors:
Nicolas Ubrig,
Evgeniy Ponomarev,
Johanna Zultak,
Daniil Domaretskiy,
Viktor Zólyomi,
Daniel Terry,
James Howarth,
Ignacio Gutiérrez-Lezama,
Alexander Zhukov,
Zakhar R. Kudrynskyi,
Zakhar D. Kovalyuk,
Amalia Patanè,
Takashi Taniguchi,
Kenji Watanabe,
Roman V. Gorbachev,
Vladimir I. Fal'ko,
Alberto F. Morpurgo
Abstract:
Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into interfaces and heterostructures. Their potential for optoelectronics stems from the possibility to tailor the spectral response over a broad range by exploiting interlayer transitions between different compounds with an app…
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Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into interfaces and heterostructures. Their potential for optoelectronics stems from the possibility to tailor the spectral response over a broad range by exploiting interlayer transitions between different compounds with an appropriate band-edge alignment. For the interlayer transitions to be radiative, however, a serious challenge comes from details of the materials --such as lattice mismatch or even a small misalignment of the constituent layers-- that can drastically suppress the electron-photon coupling. The problem was evidenced in recent studies of heterostructures of monolayer transition metal dichalcogenides, whose band edges are located at the K-point of reciprocal space. Here we demonstrate experimentally that the solution to the interlayer coupling problem is to engineer type-II interfaces by assembling atomically thin crystals that have the bottom of the conduction band and the top of the valence band at the $Γ$-point, thus avoiding any momentum mismatch. We find that this type of vdW interfaces exhibits radiative optical transition irrespective of lattice constant, rotational/translational alignment of the two layers, or whether the constituent materials are direct or indirect gap semiconductors. The result, which is robust and of general validity, drastically broadens the scope of future optoelectronics device applications based on 2D materials.
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Submitted 4 February, 2020; v1 submitted 21 December, 2019;
originally announced December 2019.
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The formation of long-lived high-correlated states of light and polarization in high-quality semiconductor microcavity at the resonant laser excitation
Authors:
Andrey Demenev,
Sergei Novikov,
Daniil Domaretskiy,
Andrey Parakhonskii,
Mikhail Lebedev
Abstract:
The correlation function of radiation from a high-quality semiconductor microcavity at the resonant laser excitation demonstrates oscillations with surprisingly long-period and damping times of a nanosecond range. It was shown that the oscillations are not attributed to weak Rabi interaction between long-lived exciton states and intracavity electromagnetic field. The study of a response with high…
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The correlation function of radiation from a high-quality semiconductor microcavity at the resonant laser excitation demonstrates oscillations with surprisingly long-period and damping times of a nanosecond range. It was shown that the oscillations are not attributed to weak Rabi interaction between long-lived exciton states and intracavity electromagnetic field. The study of a response with high spectral resolution had revealed that the oscillations arise if a spectral position as well as a period of longitudinal laser modes is similar to modulation components of a microcavity transmission spectrum.
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Submitted 3 December, 2016;
originally announced December 2016.
