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In-plane anisotropic magnetoresistance in detwinned $BaFe_{2-x}Ni_{x}As_{2}$ ($x$ = 0, 0.6)
Authors:
Kelly J. Neubauer,
Mason L. Klemm,
Shirin Mozaffari,
Lin Jiao,
Alexei E. Koshelev,
Alexander Yaresko,
Ming Yi,
Luis Balicas,
Pengcheng Dai
Abstract:
Understanding the magnetoresistance (MR) of a magnetic material forms the basis for uncovering the orbital mechanisms and charge-spin interactions in the system. Although the parent state of iron-based high-temperature superconductors, including $BaFe_2As_2$, exhibits unusual electron transport properties resulting from spin and charge correlations, there is still valuable insight to be gained by…
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Understanding the magnetoresistance (MR) of a magnetic material forms the basis for uncovering the orbital mechanisms and charge-spin interactions in the system. Although the parent state of iron-based high-temperature superconductors, including $BaFe_2As_2$, exhibits unusual electron transport properties resulting from spin and charge correlations, there is still valuable insight to be gained by understanding the in-plane MR effect due to twin domains in the orthorhombic antiferromagnetic (AF) ordered state. Here, we study the in-plane magnetoresistance anisotropy in detwinned $BaFe_2As_2$ and compare the results to the non-magnetic Ni-doped sample. We find that in the antiferromagnetically ordered state, $BaFe_2As_2$ exhibits anisotropic MR that becomes large at low temperatures and high fields. Both transverse and longitudinal MRs are highly anisotropic and dependent on the field and current orientations. These results cannot be fully explained by calculations considering only the anisotropic Fermi surface. Instead, the spin orientation of the ordered moment also affects the MR effect, suggesting the presence of a large charge-spin interaction in $BaFe_2As_2$ that is not present in the Ni-doped material.
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Submitted 1 February, 2024;
originally announced February 2024.
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Writing and detecting topological charges in exfoliated Fe$_{5-x}$GeTe$_2$
Authors:
Alex Moon,
Yue Li,
Conor McKeever,
Brian W. Casas,
Moises Bravo,
Wenkai Zheng,
Juan Macy,
Amanda K. Petford-Long,
Gregory T. McCandless,
Julia Y. Chan,
Charudatta Phatak,
Elton J. G. Santos,
Luis Balicas
Abstract:
Fe$_{5-x}$GeTe$_2$ is a promising two-dimensional (2D) van der Waals (vdW) magnet for practical applications, given its magnetic properties. These include Curie temperatures above room temperature, and topological spin textures (TST or both merons and skyrmions), responsible for a pronounced anomalous Hall effect (AHE) and its topological counterpart (THE), which can be harvested for spintronics.…
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Fe$_{5-x}$GeTe$_2$ is a promising two-dimensional (2D) van der Waals (vdW) magnet for practical applications, given its magnetic properties. These include Curie temperatures above room temperature, and topological spin textures (TST or both merons and skyrmions), responsible for a pronounced anomalous Hall effect (AHE) and its topological counterpart (THE), which can be harvested for spintronics. Here, we show that both the AHE and THE can be amplified considerably by just adjusting the thickness of exfoliated Fe$_{5-x}$GeTe$_2$, with THE becoming observable even in zero magnetic field due to a field-induced unbalance in topological charges. Using a complementary suite of techniques, including electronic transport, Lorentz transmission electron microscopy, and micromagnetic simulations, we reveal the emergence of substantial coercive fields upon exfoliation, which are absent in the bulk, implying thickness-dependent magnetic interactions that affect the TST. We detected a ``magic" thickness $t \sim $30 nm where the formation of TST is maximized, inducing large magnitudes for the topological charge density ($6.45 \times 10^{20}$ cm$^{-2}$), and the concomitant anomalous ($ρ_{xy}^{\text{A,max}} \simeq 22.6$ $μΩ$cm) and topological ($ρ_{xy}^{\text{u,T}} \simeq 15$ $μΩ$ cm) Hall resistivities at $T$ ~ 120 K. These values for $ρ_{xy}^{\text{A,max}}$ and $ρ_{xy}^{\text{u,T}}$ are higher than those found in magnetic topological insulators and, so far, the largest reported for 2D magnets. The hitherto unobserved THE under zero magnetic field could provide a platform for the writing and electrical detection of TST aiming at energy-efficient devices based on vdW ferromagnets.
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Submitted 13 January, 2024;
originally announced January 2024.
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Discovery of a hybrid topological quantum state in an elemental solid
Authors:
Md Shafayat Hossain,
Frank Schindler,
Rajibul Islam,
Zahir Muhammad,
Yu-Xiao Jiang,
Zi-Jia Cheng,
Qi Zhang,
Tao Hou,
Hongyu Chen,
Maksim Litskevich,
Brian Casas,
Jia-Xin Yin,
Tyler A. Cochran,
Mohammad Yahyavi,
Xian P. Yang,
Luis Balicas,
Guoqing Chang,
Weisheng Zhao,
Titus Neupert,
M. Zahid Hasan
Abstract:
Topology and interactions are foundational concepts in the modern understanding of quantum matter. Their nexus yields three significant research directions: competition between distinct interactions, as in the multiple intertwined phases, interplay between interactions and topology that drives the phenomena in twisted layered materials and topological magnets, and the coalescence of multiple topol…
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Topology and interactions are foundational concepts in the modern understanding of quantum matter. Their nexus yields three significant research directions: competition between distinct interactions, as in the multiple intertwined phases, interplay between interactions and topology that drives the phenomena in twisted layered materials and topological magnets, and the coalescence of multiple topological orders to generate distinct novel phases. The first two examples have grown into major areas of research, while the last example remains mostly untouched, mainly because of the lack of a material platform for experimental studies. Here, using tunneling microscopy, photoemission spectroscopy, and theoretical analysis, we unveil a "hybrid" and yet novel topological phase of matter in the simple elemental solid arsenic. Through a unique bulk-surface-edge correspondence, we uncover that arsenic features a conjoined strong and higher-order topology, stabilizing a hybrid topological phase. While momentum-space spectroscopy measurements show signs of topological surface states, real-space microscopy measurements unravel a unique geometry of topology-induced step edge conduction channels revealed on various forms of natural nanostructures on the surface. Using theoretical models, we show that the existence of gapless step edge states in arsenic relies on the simultaneous presence of both a nontrivial strong Z2 invariant and a nontrivial higher-order topological invariant, providing experimental evidence for hybrid topology and its realization in a single crystal. Our discovery highlights pathways to explore the interplay of different kinds of band topology and harness the associated topological conduction channels in future engineered quantum or nano-devices.
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Submitted 9 January, 2024;
originally announced January 2024.
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Discovery of a topological exciton insulator with tunable momentum order
Authors:
Md Shafayat Hossain,
Tyler A. Cochran,
Yu-Xiao Jiang,
Songbo Zhang,
Huangyu Wu,
Xiaoxiong Liu,
Xiquan Zheng,
Byunghoon Kim,
Guangming Cheng,
Qi Zhang,
Maksim Litskevich,
Junyi Zhang,
Zi-Jia Cheng,
Jinjin Liu,
Jia-Xin Yin,
Xian P. Yang,
Jonathan Denlinger,
Massimo Tallarida,
Ji Dai,
Elio Vescovo,
Anil Rajapitamahuni,
Hu Miao,
Nan Yao,
Yingying Peng,
Yugui Yao
, et al. (4 additional authors not shown)
Abstract:
Topology and correlations are fundamental concepts in modern physics, but their simultaneous occurrence within a single quantum phase is exceptionally rare. In this study, we present the discovery of such a phase of matter in Ta2Pd3Te5, a semimetal where the Coulomb interaction between electrons and holes leads to the spontaneous formation of excitonic bound states below T=100 K. Our spectroscopy…
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Topology and correlations are fundamental concepts in modern physics, but their simultaneous occurrence within a single quantum phase is exceptionally rare. In this study, we present the discovery of such a phase of matter in Ta2Pd3Te5, a semimetal where the Coulomb interaction between electrons and holes leads to the spontaneous formation of excitonic bound states below T=100 K. Our spectroscopy unveils the development of an insulating gap stemming from the condensation of these excitons, thus giving rise to a highly sought-after correlated quantum phase known as the excitonic insulator. Remarkably, our scanning tunneling microscopy measurements reveal the presence of gapless boundary modes in the excitonic insulator state. Their magnetic field response and our theoretical calculations suggest a topological origin of these modes, rendering Ta2Pd3Te5 as the first experimentally identified topological excitonic insulator in a three-dimensional material not masked by any structural phase transition. Furthermore, our study uncovers a secondary excitonic instability below T=5 K, which differs from the primary one in having finite momentum. We observe unprecedented tunability of its wavevector by an external magnetic field. These findings unlock a frontier in the study of novel correlated topological phases of matter and their tunability.
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Submitted 25 December, 2023;
originally announced December 2023.
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Transport response of topological hinge modes in $α$-Bi$_4$Br$_4$
Authors:
Md Shafayat Hossain,
Qi Zhang,
Zhiwei Wang,
Nikhil Dhale,
Wenhao Liu,
Maksim Litskevich,
Brian Casas,
Nana Shumiya,
Jia-Xin Yin,
Tyler A. Cochran,
Yongkai Li,
Yu-Xiao Jiang,
Ying Yang,
Guangming Cheng,
Zi-Jia Cheng,
Xian P. Yang,
Nan Yao,
Titus Neupert,
Luis Balicas,
Yugui Yao,
Bing Lv,
M. Zahid Hasan
Abstract:
Electronic topological phases are renowned for their unique properties, where conducting surface states exist on the boundary of an insulating three-dimensional bulk. While the transport response of the surface states has been extensively studied, the response of the topological hinge modes remains elusive. Here, we investigate a layered topological insulator $α$-Bi$_4$Br$_4$, and provide the firs…
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Electronic topological phases are renowned for their unique properties, where conducting surface states exist on the boundary of an insulating three-dimensional bulk. While the transport response of the surface states has been extensively studied, the response of the topological hinge modes remains elusive. Here, we investigate a layered topological insulator $α$-Bi$_4$Br$_4$, and provide the first evidence for quantum transport in gapless topological hinge states existing within the insulating bulk and surface energy gaps. Our magnetoresistance measurements reveal pronounced h/e periodic (where h denotes Planck's constant and e represents the electron charge) Aharonov-Bohm oscillation. The observed periodicity, which directly reflects the enclosed area of phase-coherent electron propagation, matches the area enclosed by the sample hinges, providing compelling evidence for the quantum interference of electrons circumnavigating around the hinges. Notably, the h/e oscillations evolve as a function of magnetic field orientation, following the interference paths along the hinge modes that are allowed by topology and symmetry, and in agreement with the locations of the hinge modes according to our scanning tunneling microscopy images. Remarkably, this demonstration of quantum transport in a topological insulator can be achieved using a flake geometry and we show that it remains robust even at elevated temperatures. Our findings collectively reveal the quantum transport response of topological hinge modes with both topological nature and quantum coherence, which can be directly applied to the development of efficient quantum electronic devices.
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Submitted 14 February, 2024; v1 submitted 14 December, 2023;
originally announced December 2023.
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Giant Tunability of Intersubband Transitions and Quantum Hall Quartets in Few-Layer InSe Quantum Wells
Authors:
Dmitry Shcherbakov,
Greyson Voigt,
Shahriar Memaran,
Gui-Bin Liu,
Qiyue Wang,
Kenji Watanabe,
Takashi Taniguchi,
Dmitry Smirnov,
Luis Balicas,
Fan Zhang,
Chun Ning Lau
Abstract:
A two-dimensional (2D) quantum electron system is characterized by the quantized energy levels, or subbands, in the out-of-plane direction. Populating higher subbands and controlling the inter-subband transitions have wide technological applications such as optical modulators and quantum cascade lasers. In conventional materials, however, the tunability of intersubband spacing is limited. Here we…
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A two-dimensional (2D) quantum electron system is characterized by the quantized energy levels, or subbands, in the out-of-plane direction. Populating higher subbands and controlling the inter-subband transitions have wide technological applications such as optical modulators and quantum cascade lasers. In conventional materials, however, the tunability of intersubband spacing is limited. Here we demonstrate electrostatic population and characterization of the second subband in few-layer InSe quantum wells, with giant tunability of its energy, population, and spin-orbit coupling strength, via the control of not only layer thickness but also out-of-plane displacement field. A modulation of as much as 350% or over 250 meV is achievable, underscoring the promise of InSe for tunable infrared and THz sources, detectors and modulators.
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Submitted 23 February, 2024; v1 submitted 5 December, 2023;
originally announced December 2023.
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Nematic superconductivity from selective orbital pairing in Ba(Fe1-xMx)2As2 (M = Co, Ni) single crystals
Authors:
Mason Klemm,
Shirin Mozaffari,
Rui Zhang,
Brian W. Casas,
Alexei E. Koshelev,
Ming Yi,
Luis Balicas,
Pengcheng Dai
Abstract:
We use transport measurements to determine the in-plane anisotropy of the upper critical field Hc2 in detwinned superconducting Ba(Fe1-xMx)2As2 (M = Co, Ni) single crystals. In previous measurements on twinned single crystals, the charge carrier doping dependence (x) of the upper critical field anisotropy for fields along the inter-planar (c-axis) and in-plane field directions was found to increas…
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We use transport measurements to determine the in-plane anisotropy of the upper critical field Hc2 in detwinned superconducting Ba(Fe1-xMx)2As2 (M = Co, Ni) single crystals. In previous measurements on twinned single crystals, the charge carrier doping dependence (x) of the upper critical field anisotropy for fields along the inter-planar (c-axis) and in-plane field directions was found to increase in the overdoped regime. For underdoped samples, which exhibit a spin nematic phase below the tetragonal to orthorhombic structural transition temperature Ts , we find that Hc2 along the a-axis is considerably lower than that along the b-axis. The upper critical field anisotropy disappears in the over-doped regime when the system becomes tetragonal. By combining these results with inelastic neutron scattering studies of spin excitations, and angle-resolved photoemission spectroscopy, we conclude that superconductivity in under-doped iron pnictides is orbital selective - with a dominant contribution from electrons with the dyz orbital character and being intimately associated with spin excitations.
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Submitted 13 November, 2023;
originally announced November 2023.
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Anisotropic positive linear and sub-linear magnetoresistivity in the cubic type-II Dirac metal Pd$_3$In$_7$
Authors:
Aikaterini Flessa Savvidou,
Andrzej Ptok,
G. Sharma,
Brian Casas,
Judith K. Clark,
Victoria M. Li,
Michael Shatruk,
Sumanta Tewari,
Luis Balicas
Abstract:
We report a transport study on Pd$_3$In$_7$ which displays multiple Dirac type-II nodes in its electronic dispersion. Pd$_3$In$_7$ is characterized by low residual resistivities and high mobilities, which are consistent with Dirac-like quasiparticles. For an applied magnetic field $(μ_{\text{0}} H)$ having a non-zero component along the electrical current, we find a large, positive, and linear in…
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We report a transport study on Pd$_3$In$_7$ which displays multiple Dirac type-II nodes in its electronic dispersion. Pd$_3$In$_7$ is characterized by low residual resistivities and high mobilities, which are consistent with Dirac-like quasiparticles. For an applied magnetic field $(μ_{\text{0}} H)$ having a non-zero component along the electrical current, we find a large, positive, and linear in $μ_{\text{0}} H$ longitudinal magnetoresistivity (LMR). The sign of the LMR and its linear dependence deviate from the behavior reported for the chiral-anomaly-driven LMR in Weyl semimetals. Interestingly, such anomalous LMR is consistent with predictions for the role of the anomaly in type-II Weyl semimetals. In contrast, the transverse or conventional magnetoresistivity (CMR for electric fields $\textbf{E} \bot μ_{\text{0}} \textbf{H}$) is large and positive, increasing by $10^3-10^4$ \% as a function of $μ_{\text{0}}H$ while following an anomalous, angle-dependent power law $ρ_{\text{xx}}\propto (μ_{\text{0}}H)^n$ with $n(θ) \leq 1$. The order of magnitude of the CMR, and its anomalous power-law, is explained in terms of uncompensated electron and hole-like Fermi surfaces characterized by anisotropic carrier scattering likely due to the lack of Lorentz invariance.
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Submitted 3 November, 2023;
originally announced November 2023.
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Coexistence of Merons with Skyrmions in the Centrosymmetric van der Waals Ferromagnet Fe5GeTe2
Authors:
Brian W. Casas,
Yue Li,
Alex Moon,
Yan Xin,
Conor McKeever,
Juan Macy,
Amanda K. Petford-Long,
Charudatta M. Phatak,
Elton J. G. Santos,
Eun Sang Choi,
Luis Balicas
Abstract:
Fe$_{5-x}$GeTe$_2$ is a centrosymmetric, layered van der Waals (vdW) ferromagnet that displays Curie temperatures $T_c$ (270-330 K) that are within the useful range for spintronic applications. However, little is known about the interplay between its topological spin textures (e.g., merons, skyrmions) with technologically relevant transport properties such as the topological Hall effect (THE), or…
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Fe$_{5-x}$GeTe$_2$ is a centrosymmetric, layered van der Waals (vdW) ferromagnet that displays Curie temperatures $T_c$ (270-330 K) that are within the useful range for spintronic applications. However, little is known about the interplay between its topological spin textures (e.g., merons, skyrmions) with technologically relevant transport properties such as the topological Hall effect (THE), or topological thermal transport. Here, we show via high-resolution Lorentz transmission electron microscopy that merons and anti-meron pairs coexist with Néel skyrmions in Fe$_{5-x}$GeTe$_2$ over a wide range of temperatures and probe their effects on thermal and electrical transport. We detect a THE, even at room $T$, that senses merons at higher $T$s as well as their coexistence with skyrmions as $T$ is lowered indicating an on-demand thermally driven formation of either type of spin texture. Remarkably, we also observe an unconventional THE in absence of Lorentz force and attribute it to the interaction between charge carriers and magnetic field-induced chiral spin textures. Our results expose Fe$_{5-x}$GeTe$_2$ as a promising candidate for the development of applications in skyrmionics/meronics due to the interplay between distinct but coexisting topological magnetic textures and unconventional transport of charge/heat carriers.
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Submitted 14 February, 2023; v1 submitted 9 February, 2023;
originally announced February 2023.
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Anomalously high supercurrent density in a two-dimensional topological material
Authors:
Qi Zhang,
Md Shafayat Hossain,
Brian Casas,
Wenkai Zheng,
Zi-Jia Cheng,
Zhuangchai Lai,
Yi-Hsin Tu,
Guoqing Chang,
Yao Yao,
Siyuan Li,
Yu-Xiao Jiang,
Sougata Mardanya,
Tay-Rong Chang,
Jing-Yang You,
Yuan-Ping Feng,
Guangming Cheng,
Jia-Xin Yin,
Nana Shumiya,
Tyler A. Cochran,
Xian P. Yang,
Maksim Litskevich,
Nan Yao,
Kenji Watanabe,
Takashi Taniguchi,
Hua Zhang
, et al. (2 additional authors not shown)
Abstract:
Ongoing advances in superconductors continue to revolutionize technology thanks to the increasingly versatile and robust availability of lossless supercurrent. In particular high supercurrent density can lead to more efficient and compact power transmission lines, high-field magnets, as well as high-performance nanoscale radiation detectors and superconducting spintronics. Here, we report the disc…
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Ongoing advances in superconductors continue to revolutionize technology thanks to the increasingly versatile and robust availability of lossless supercurrent. In particular high supercurrent density can lead to more efficient and compact power transmission lines, high-field magnets, as well as high-performance nanoscale radiation detectors and superconducting spintronics. Here, we report the discovery of an unprecedentedly high superconducting critical current density (17 MA/cm2 at 0 T and 7 MA/cm2 at 8 T) in 1T'-WS2, exceeding those of all reported two-dimensional superconductors to date. 1T'-WS2 features a strongly anisotropic (both in- and out-of-plane) superconducting state that violates the Pauli paramagnetic limit signaling the presence of unconventional superconductivity. Spectroscopic imaging of the vortices further substantiates the anisotropic nature of the superconducting state. More intriguingly, the normal state of 1T'-WS2 carries topological properties. The band structure obtained via angle-resolved photoemission spectroscopy and first-principles calculations points to a Z2 topological invariant. The concomitance of topology and superconductivity in 1T'-WS2 establishes it as a topological superconductor candidate, which is promising for the development of quantum computing technology.
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Submitted 26 January, 2023;
originally announced January 2023.
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Thickness and twist angle dependent interlayer excitons in metal monochalcogenide heterostructures
Authors:
Wenkai Zheng,
Li Xiang,
Felipe de Quesada,
Mathias Augustin,
Zhengguang Lu,
Matthew Wilson,
Aditya Sood,
Fengcheng Wu,
Dmitry Shcherbakov,
Shahriar Memaran,
Ryan E. Baumbach,
Gregory T. McCandless,
Julia Y. Chan,
Song Liu,
James Edgar,
Chun Ning Lau,
Chun Hung Lui,
Elton Santos,
Aaron Lindenberg,
Dmitry Smirnov,
Luis Balicas
Abstract:
Interlayer excitons, or bound electron-hole pairs whose constituent quasiparticles are located in distinct stacked semiconducting layers, are being intensively studied in heterobilayers of two dimensional semiconductors. They owe their existence to an intrinsic type-II band alignment between both layers that convert these into p-n junctions. Here, we unveil a pronounced interlayer exciton (IX) in…
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Interlayer excitons, or bound electron-hole pairs whose constituent quasiparticles are located in distinct stacked semiconducting layers, are being intensively studied in heterobilayers of two dimensional semiconductors. They owe their existence to an intrinsic type-II band alignment between both layers that convert these into p-n junctions. Here, we unveil a pronounced interlayer exciton (IX) in heterobilayers of metal monochalcogenides, namely gamma-InSe on epsilon-GaSe, whose pronounced emission is adjustable just by varying their thicknesses given their number of layers dependent direct bandgaps. Time-dependent photoluminescense spectroscopy unveils considerably longer interlayer exciton lifetimes with respect to intralayer ones, thus confirming their nature. The linear Stark effect yields a bound electron-hole pair whose separation d is just (3.6 \pm 0.1) Å with d being very close to dSe = 3.4 Å which is the calculated interfacial Se separation. The envelope of IX is twist angle dependent and describable by superimposed emissions that are nearly equally spaced in energy, as if quantized due to localization induced by the small moiré periodicity. These heterostacks are characterized by extremely flat interfacial valence bands making them prime candidates for the observation of magnetism or other correlated electronic phases upon carrier doping.
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Submitted 15 October, 2022;
originally announced October 2022.
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Weyl nodal ring states and Landau quantization with very large magnetoresistance in square-net magnet EuGa$_4$
Authors:
Shiming Lei,
Kevin Allen,
Jianwei Huang,
Jaime M. Moya,
Tsz Chun Wu,
Brian Casas,
Yichen Zhang,
Ji Seop Oh,
Makoto Hashimoto,
Donghui Lu,
Jonathan Denlinger,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Luis Balicas,
Robert Birgeneau,
Matthew S. Foster,
Ming Yi,
Yan Sun,
Emilia Morosan
Abstract:
Magnetic topological semimetals (TSMs) allow for an effective control of the topological electronic states by tuning the spin configuration, and therefore are promising materials for next-generation electronic and spintronic applications. Of magnetic TSMs, Weyl nodal-line (NL) semimetals likely have the most tunability, and yet they are the least experimentally studied so far due to the scarcity o…
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Magnetic topological semimetals (TSMs) allow for an effective control of the topological electronic states by tuning the spin configuration, and therefore are promising materials for next-generation electronic and spintronic applications. Of magnetic TSMs, Weyl nodal-line (NL) semimetals likely have the most tunability, and yet they are the least experimentally studied so far due to the scarcity of material candidates. Here, using a combination of angle-resolved photoemission spectroscopy and quantum oscillation measurements, together with density functional theory calculations, we identify the square-net compound EuGa4 as a new magnetic Weyl nodal ring (NR) semimetal, in which the line nodes form closed rings in the vicinity of the Fermi level. Remarkably, the Weyl NR states show distinct Landau quantization with clear spin splitting upon application of a magnetic field. At 2 K in a field of 14 T, the transverse magnetoresistance of EuGa4 exceeds 200,000%, which is more than two orders of magnitude larger than that of other known magnetic TSMs. High field magnetoresistance measurements indicate no saturation up to 40 T. Our theoretical model indicates that the nonsaturating MR naturally arises as a consequence of the Weyl NR state. Our work thus point to the realization of Weyl NR states in square-net magnetic materials, and opens new avenues for the design of magnetic TSMs with very large magnetoresistance.
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Submitted 14 December, 2022; v1 submitted 12 August, 2022;
originally announced August 2022.
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High-temperature superconductivity in hydrides: experimental evidence and details
Authors:
M. I. Eremets,
V. S. Minkov,
A. P. Drozdov,
P. P. Kong,
V. Ksenofontov,
S. I. Shylin,
S. L. Bud ko,
R. Prozorov,
F. F. Balakirev,
Dan Sun,
S. Mozaffari,
L. Balicas
Abstract:
Since the discovery of superconductivity at 200 K in H3S [1] similar or higher transition temperatures, Tcs, have been reported for various hydrogen-rich compounds under ultra-high pressures [2]. Superconductivity was experimentally proved by different methods, including electrical resistance, magnetic susceptibility, optical infrared, and nuclear resonant scattering measurements. The crystal stru…
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Since the discovery of superconductivity at 200 K in H3S [1] similar or higher transition temperatures, Tcs, have been reported for various hydrogen-rich compounds under ultra-high pressures [2]. Superconductivity was experimentally proved by different methods, including electrical resistance, magnetic susceptibility, optical infrared, and nuclear resonant scattering measurements. The crystal structures of superconducting phases were determined by X-ray diffraction. Numerous electrical transport measurements demonstrate the typical behaviour of a conventional phonon-mediated superconductor: zero resistance below Tc, the shift of Tc to lower temperatures under external magnetic fields, and pronounced isotope effect. Remarkably, the results are in good agreement with the theoretical predictions, which describe superconductivity in hydrides within the framework of the conventional BCS theory. However, despite this acknowledgment, experimental evidence for the superconducting state in these compounds has recently been treated with criticism [3, 4], which apparently stems from misunderstanding and misinterpretation of complicated experiments performed under very high pressures. Here, we describe in greater detail the experiments revealing high-temperature superconductivity in hydrides under high pressures. We show that the arguments against superconductivity [3, 4] can be either refuted or explained. The experiments on the high-temperature superconductivity in hydrides clearly contradict the theory of hole superconductivity [4] and eliminate it [3].
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Submitted 13 January, 2022;
originally announced January 2022.
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Light sources with bias tunable spectrum based on van der Waals interface transistors
Authors:
Hugo Henck,
Diego Mauro,
Daniil Domaretskiy,
Marc Philippi,
Shahriar Memaran,
Wenkai Zheng,
Zhengguang Lu,
Dmitry Shcherbakov,
Chun Ning Lau,
Dmitry Smirnov,
Luis Balicas,
Kenji Watanabe,
Vladimir I. Fal'ko,
Ignacio Gutiérrez-Lezama,
Nicolas Ubrig,
Alberto F. Morpurgo
Abstract:
Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broa…
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Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broad electrical tuning of the spectrum of electroluminescent devices remains challenging. Here, we propose light-emitting field-effect transistors based on van der Waals interfaces of atomically thin semiconductors as a promising class of devices to achieve this goal. We demonstrate that large spectral changes in room-temperature electroluminescence can be controlled both at the device assembly stage -- by suitably selecting the material forming the interfaces -- and on-chip, by changing the bias to modify the device operation point. Even though the precise relation between device bias and kinetics of the radiative transitions remains to be understood, our experiments show that the physical mechanism responsible for light emission is robust, making these devices compatible with simple large areas device production methods.
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Submitted 8 July, 2022; v1 submitted 4 January, 2022;
originally announced January 2022.
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Room-temperature quantum spin Hall edge state in a higher-order topological insulator Bi$_4$Br$_4$
Authors:
Nana Shumiya,
Md Shafayat Hossain,
Jia-Xin Yin,
Zhiwei Wang,
Maksim Litskevich,
Chiho Yoon,
Yongkai Li,
Ying Yang,
Yu-Xiao Jiang,
Guangming Cheng,
Yen-Chuan Lin,
Qi Zhang,
Zi-Jia Cheng,
Tyler A. Cochran,
Daniel Multer,
Xian P. Yang,
Brian Casas,
Tay-Rong Chang,
Titus Neupert,
Zhujun Yuan,
Shuang Jia,
Hsin Lin,
Nan Yao,
Luis Balicas,
Fan Zhang
, et al. (2 additional authors not shown)
Abstract:
Room-temperature realization of macroscopic quantum phenomena is one of the major pursuits in fundamental physics. The quantum spin Hall state, a topological quantum phenomenon that features a two-dimensional insulating bulk and a helical edge state, has not yet been realized at room temperature. Here, we use scanning tunneling microscopy to visualize a quantum spin Hall edge state on the surface…
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Room-temperature realization of macroscopic quantum phenomena is one of the major pursuits in fundamental physics. The quantum spin Hall state, a topological quantum phenomenon that features a two-dimensional insulating bulk and a helical edge state, has not yet been realized at room temperature. Here, we use scanning tunneling microscopy to visualize a quantum spin Hall edge state on the surface of the higher-order topological insulator Bi4Br4. We find that the atomically resolved lattice exhibits a large insulating gap of over 200meV, and an atomically sharp monolayer step edge hosts a striking in-gap gapless state, suggesting the topological bulk-boundary correspondence. An external magnetic field can gap the edge state, consistent with the time-reversal symmetry protection inherent to the underlying topology. We further identify the geometrical hybridization of such edge states, which not only attests to the Z2 topology of the quantum spin Hall state but also visualizes the building blocks of the higher-order topological insulator phase. Remarkably, both the insulating gap and topological edge state are observed to persist up to 300K. Our results point to the realization of the room-temperature quantum spin Hall edge state in a higher-order topological insulator.
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Submitted 5 September, 2022; v1 submitted 11 October, 2021;
originally announced October 2021.
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Magnetic field-induced non-trivial electronic topology in Fe3GeTe2
Authors:
Juan Macy,
Danilo Ratkovski,
Purnima P. Balakrishnan,
Mara Strungaru,
Yu-Che Chiu,
Aikaterini Flessa,
Alex Moon,
Wenkai Zheng,
Ashley Weiland,
Gregory T. McCandless,
Julia Y. Chan,
Govind S. Kumar,
Michael Shatruk,
Alexander J. Grutter,
Julie A. Borchers,
William D. Ratcliff,
Eun Sang Choi,
Elton J. G. Santos,
Luis Balicas
Abstract:
The anomalous Hall, Nernst and thermal Hall coefficients of Fe$_{3-x}$GeTe$_2$ display several features upon cooling, like a reversal in the Nernst signal below $T = 50$ K pointing to a topological transition (TT) associated to the development of magnetic spin textures. Since the anomalous transport variables are related to the Berry curvature, a possible TT might imply deviations from the Wiedema…
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The anomalous Hall, Nernst and thermal Hall coefficients of Fe$_{3-x}$GeTe$_2$ display several features upon cooling, like a reversal in the Nernst signal below $T = 50$ K pointing to a topological transition (TT) associated to the development of magnetic spin textures. Since the anomalous transport variables are related to the Berry curvature, a possible TT might imply deviations from the Wiedemann-Franz (WF) law. However, the anomalous Hall and thermal Hall coefficients of Fe$_{3-x}$GeTe$_2$ are found, within our experimental accuracy, to satisfy the WF law for magnetic-fields $μ_0H$ applied along its inter-layer direction. Surprisingly, large anomalous transport coefficients are also observed for $μ_0H$ applied along the planar \emph{a}-axis as well as along the gradient of the chemical potential, a configuration that should not lead to their observation due to the absence of Lorentz force. However, as $μ_0H$ $\|$ \emph{a}-axis is increased, magnetization and neutron scattering indicate just the progressive canting of the magnetic moments towards the planes followed by their saturation. These anomalous planar quantities are found to not scale with the component of the planar magnetization ($M_{\|}$), showing instead a sharp decrease beyond $\sim μ_0 H_{\|} = $ 4 T which is the field required to align the magnetic moments along $μ_0 H_{\|}$. We argue that locally chiral spin structures, such as skyrmions, and possibly skyrmion tubes, lead to a field dependent spin-chirality and hence to a novel type of topological anomalous transport. Locally chiral spin-structures are captured by our Monte-Carlo simulations incorporating small Dzyaloshinskii-Moriya and biquadratic exchange interactions.
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Submitted 13 October, 2021; v1 submitted 17 June, 2021;
originally announced June 2021.
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Experimental observation and spin texture of Dirac node arcs in tetradymite topological metals
Authors:
J. Dai,
E. Frantzeskakis,
N. Aryal,
K. -W. Chen,
F. Fortuna,
J. E. Rault,
P. Le Fèvre,
L. Balicas,
K. Miyamoto,
T. Okuda,
E. Manousakis,
R. E. Baumbach,
A. F. Santander-Syro
Abstract:
We report the observation of a non-trivial spin texture in Dirac node arcs, novel topological objects formed when Dirac cones of massless particles extend along an open one-dimensional line in momentum space. We find that such states are present in all the compounds of the tetradymite M$_2$Te$_2$X family (M$=$Ti, Zr or Hf and X$=$P or As), regardless of the weak or strong character of the topologi…
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We report the observation of a non-trivial spin texture in Dirac node arcs, novel topological objects formed when Dirac cones of massless particles extend along an open one-dimensional line in momentum space. We find that such states are present in all the compounds of the tetradymite M$_2$Te$_2$X family (M$=$Ti, Zr or Hf and X$=$P or As), regardless of the weak or strong character of the topological invariant. The Dirac node arcs in tetradymites are thus the simplest possible, textbook example, of a type-I Dirac system with a single spin-polarized node arc.
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Submitted 16 May, 2021;
originally announced May 2021.
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Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal MIrTe4 (M=Nb and Ta)
Authors:
Sijin Long,
Shu Cai,
Rico Schonemann,
Priscila F. S. Rosa,
Luis Balicas,
Cheng Huang,
Jing Guo,
Yazhou Zhou,
Jinyu Han,
Liqin Zhou,
Yanchun Li,
Xiaodong Li,
Qi Wu,
Hongming Weng,
Tao Xiang,
Liling Sun
Abstract:
Here we report the observation of pressure-induced superconductivity in type-II Weyl semimetal (WSM) candidate NbIrTe4 and the evolution of its Hall coefficient (RH), magnetoresistance (MR), and lattice with increasing pressure to ~57 GPa. These results provide a significant opportunity to investigate the universal high-pressure behavior of ternary WSMs, including the sister compound TaIrTe4 that…
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Here we report the observation of pressure-induced superconductivity in type-II Weyl semimetal (WSM) candidate NbIrTe4 and the evolution of its Hall coefficient (RH), magnetoresistance (MR), and lattice with increasing pressure to ~57 GPa. These results provide a significant opportunity to investigate the universal high-pressure behavior of ternary WSMs, including the sister compound TaIrTe4 that has been known through our previous studies. We find that the pressure-tuned evolution from the WSM to the superconducting (SC) state in these two compounds exhibit the same trend, i.e., a pressure-induced SC state emerges from the matrix of the non-superconducting WSM state at ~ 27 GPa, and then the WSM state and the SC state coexist up to 40 GPa. Above this pressure, an identical high-pressure behavior, characterized by almost the same value of RH and MR in its normal state and the same value of Tc in its SC state, appears in both compounds. Our results not only reveal a universal connection between the WSM state and SC state, but also demonstrate that NbIrTe4 and TaIrTe4 can make the same contribution to the normal and SC states that inhabit in the high-pressure phase, although these two compounds have dramatically different topological band structure at ambient pressure.
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Submitted 11 May, 2021;
originally announced May 2021.
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Magnetism and Spin Dynamics in Room-Temperature van der Waals Magnet Fe$_5$GeTe$_2$
Authors:
Laith Alahmed,
Bhuwan Nepal,
Juan Macy,
Wenkai Zheng,
Arjun Sapkota,
Nicholas Jones,
Alessandro R. Mazza,
Matthew Brahlek,
Wencan Jin,
Masoud Mahjouri-Samani,
Steven S. L. Zhang,
Claudia Mewes,
Luis Balicas,
Tim Mewes,
Peng Li
Abstract:
Two-dimensional (2D) van der Waals (vdWs) materials have gathered a lot of attention recently. However, the majority of these materials have Curie temperatures that are well below room temperature, making it challenging to incorporate them into device applications. In this work, we synthesized a room-temperature vdW magnetic crystal Fe$_5$GeTe$_2$ with a Curie temperature T$_c = 332$ K, and studie…
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Two-dimensional (2D) van der Waals (vdWs) materials have gathered a lot of attention recently. However, the majority of these materials have Curie temperatures that are well below room temperature, making it challenging to incorporate them into device applications. In this work, we synthesized a room-temperature vdW magnetic crystal Fe$_5$GeTe$_2$ with a Curie temperature T$_c = 332$ K, and studied its magnetic properties by vibrating sample magnetometry (VSM) and broadband ferromagnetic resonance (FMR) spectroscopy. The experiments were performed with external magnetic fields applied along the c-axis (H$\parallel$c) and the ab-plane (H$\parallel$ab), with temperatures ranging from 300 K to 10 K. We have found a sizable Landé g-factor difference between the H$\parallel$c and H$\parallel$ab cases. In both cases, the Landé g-factor values deviated from g = 2. This indicates contribution of orbital angular momentum to the magnetic moment. The FMR measurements reveal that Fe$_5$GeTe$_2$ has a damping constant comparable to Permalloy. With reducing temperature, the linewidth was broadened. Together with the VSM data, our measurements indicate that Fe$_5$GeTe$_2$ transitions from ferromagnetic to ferrimagnetic at lower temperatures. Our experiments highlight key information regarding the magnetic state and spin scattering processes in Fe$_5$GeTe$_2$, which promote the understanding of magnetism in Fe$_5$GeTe$_2$, leading to implementations of Fe$_5$GeTe$_2$ based room-temperature spintronic devices.
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Submitted 14 September, 2021; v1 submitted 24 March, 2021;
originally announced March 2021.
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Evidence of a coupled electron-phonon liquid in NbGe$_2$
Authors:
Hung-Yu Yang,
Xiaohan Yao,
Vincent Plisson,
Shirin Mozaffari,
Jan P. Scheifers,
Aikaterini Flessa Savvidou,
Gregory T. McCandless,
Mathieu F. Padlewski,
Carsten Putzke,
Philip J. W. Moll,
Julia Y. Chan,
Luis Balicas,
Kenneth S. Burch,
Fazel Tafti
Abstract:
Whereas electron-phonon scattering typically relaxes the electron's momentum in metals, a perpetual exchange of momentum between phonons and electrons conserves total momentum and can lead to a coupled electron-phonon liquid with unique transport properties. This theoretical idea was proposed decades ago and has been revisited recently, but the experimental signatures of an electron-phonon liquid…
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Whereas electron-phonon scattering typically relaxes the electron's momentum in metals, a perpetual exchange of momentum between phonons and electrons conserves total momentum and can lead to a coupled electron-phonon liquid with unique transport properties. This theoretical idea was proposed decades ago and has been revisited recently, but the experimental signatures of an electron-phonon liquid have been rarely reported. We present evidence of such a behavior in a transition metal ditetrelide, NbGe$_2$, from three different experiments. First, quantum oscillations reveal an enhanced quasiparticle mass, which is unexpected in NbGe$_2$ due to weak electron-electron correlations, hence pointing at electron-phonon interactions. Second, resistivity measurements exhibit a discrepancy between the experimental data and calculated curves within a standard Fermi liquid theory. Third, Raman scattering shows anomalous temperature dependence of the phonon linewidths which fits an empirical model based on phonon-electron coupling. We discuss structural factors, such as chiral symmetry, short metallic bonds, and a low-symmetry coordination environment as potential sources of coupled electron-phonon liquids.
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Submitted 2 March, 2021;
originally announced March 2021.
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High magnetic field induced crossover from the Kondo to Fermi liquid behavior in 1$T$-VTe$_{2}$ single crystals
Authors:
Xiaxin Ding,
Jie Xing,
Gang Li,
Luis Balicas,
Krzysztof Gofryk,
Hai-Hu Wen
Abstract:
The magnetic and magnetotransport properties of metallic 1$T$-VTe$_{2}$ single crystals were investigated at temperatures from 1.3 to 300 K and in magnetic fields up to 35 T. Upon applying a high magnetic field, it is found that the electrical resistivity displays a crossover from the logarithmic divergence of the single-impurity Kondo effect to the Fermi liquid behavior at low temperatures. The B…
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The magnetic and magnetotransport properties of metallic 1$T$-VTe$_{2}$ single crystals were investigated at temperatures from 1.3 to 300 K and in magnetic fields up to 35 T. Upon applying a high magnetic field, it is found that the electrical resistivity displays a crossover from the logarithmic divergence of the single-impurity Kondo effect to the Fermi liquid behavior at low temperatures. The Brillouin scale of the negative magnetoresistivity above the Kondo temperature $T_{\rm{K}}$ = 12 K indicates that the Kondo features originate from intercalated V ions, with $S$ = 1/2. Both magnetic susceptibility and Hall effect show an anomaly around $T_{\rm{K}}$. By using the modified Hamann expression we successfully describe the temperature-dependent resistivity under various magnetic fields, which shows the characteristic peak below $T_{\rm{K}}$ due to the splitting of the Kondo resonance.
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Submitted 22 February, 2021;
originally announced February 2021.
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Complex Dirac-like Electronic Structure in Atomic Site Ordered Rh3In3.4Ge3.6
Authors:
Aikaterini Flessa Savvidou,
Judith K. Clark,
Hua Wang,
Kaya Wei,
Eun Sang Choi,
Shirin Mozaffari,
Xiaofeng Qian,
Michael Shatruk,
Luis Balicas
Abstract:
We report the synthesis via an indium flux method of a novel single-crystalline compound Rh3In3.4Ge3.6 that belongs to the cubic Ir3Ge7 structure type. In Rh3In3.4Ge3.6, the In and Ge atoms choose to preferentially occupy, respectively, the 12d and 16f sites of the Im-3m space group, thus creating a colored version of the Ir3Ge7 structure. Like the other compounds of the Ir3Ge7 family, Rh3In3.4Ge3…
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We report the synthesis via an indium flux method of a novel single-crystalline compound Rh3In3.4Ge3.6 that belongs to the cubic Ir3Ge7 structure type. In Rh3In3.4Ge3.6, the In and Ge atoms choose to preferentially occupy, respectively, the 12d and 16f sites of the Im-3m space group, thus creating a colored version of the Ir3Ge7 structure. Like the other compounds of the Ir3Ge7 family, Rh3In3.4Ge3.6 shows potential as a thermoelectric displaying a relatively large power factor, PF ~ 2 mW/cmK2, at a temperature T ~ 225 K albeit showing a modest figure of merit, ZT = 8 x 10-4, due to the lack of a finite band gap. These figures might improve through a use of chemical substitution strategies to achieve band gap opening. Remarkably, electronic band structure calculations reveal that this compound displays a complex Dirac-like electronic structure relatively close to the Fermi level. The electronic structure is composed of several Dirac type-I and type-II nodes, and even Dirac type-III nodes that result from the touching between a flat band and a linearly dispersing band. This rich Dirac-like electronic dispersion offers the possibility to observe Dirac type-III nodes and study their role in the physical properties of Rh3In3.4Ge3.6 and related Ir3Ge7-type materials.
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Submitted 2 February, 2021;
originally announced February 2021.
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Interplay between strong correlations and electronic topology in the underlying kagome lattice of Na2/3CoO2
Authors:
I. F. Gilmutdinov,
R. Schönemann,
D. Vignolles,
C. Proust,
I. R. Mukhamedshin,
L. Balicas,
H. Alloul
Abstract:
Electronic topology in metallic kagome compounds is under intense scrutiny. We present transport experiments in Na2/3CoO2 in which the Na order differentiates a Co kagome sub-lattice in the triangular CoO2 layers. Hall and magnetoresistance (MR) data under high fields give evidence for the coexistence of light and heavy carriers. At low temperatures, the dominant light carrier conductivity at zero…
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Electronic topology in metallic kagome compounds is under intense scrutiny. We present transport experiments in Na2/3CoO2 in which the Na order differentiates a Co kagome sub-lattice in the triangular CoO2 layers. Hall and magnetoresistance (MR) data under high fields give evidence for the coexistence of light and heavy carriers. At low temperatures, the dominant light carrier conductivity at zero field is suppressed by a B-linear MR suggesting Dirac like quasiparticles. Lifshitz transitions induced at large B and T unveil the lower mobility carriers. They display a negative B^2 MR due to scattering from magnetic moments likely pertaining to a flat band. We underline an analogy with heavy Fermion physics.
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Submitted 8 November, 2021; v1 submitted 13 January, 2021;
originally announced January 2021.
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Layer- and Gate-tunable Spin-Orbit Coupling in a High Mobility Few-Layer Semiconductor
Authors:
D. Shcherbakov,
P. Stepanov,
S. Memaran,
Y. Wang,
Y. Xin,
J. Yang,
K. Wei,
R. Baumbach,
W. Zheng,
K. Watanabe,
T. Taniguchi,
M. Bockrath,
D. Smirnov,
T. Siegrist,
W. Windl,
L. Balicas,
C. N. Lau
Abstract:
Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inversion symmetry, it lifts the spin degeneracy and leads to many magnetic, spintronic and topological phenomena and applications. In bulk materials, SOC strength is a constant that cannot be modified. Here we demonstrate…
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Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inversion symmetry, it lifts the spin degeneracy and leads to many magnetic, spintronic and topological phenomena and applications. In bulk materials, SOC strength is a constant that cannot be modified. Here we demonstrate SOC and intrinsic spin-splitting in atomically thin InSe, which can be modified over an unprecedentedly large range. From quantum oscillations, we establish that the SOC parameter αis thickness-dependent; it can be continuously modulated over a wide range by an out-of-plane electric field, achieving intrinsic spin splitting tunable between 0 and 20 meV. Surprisingly, αcould be enhanced by an order of magnitude in some devices, suggesting that SOC can be further manipulated. Our work highlights the extraordinary tunability of SOC in 2D materials, which can be harnessed for in operando spintronic and topological devices and applications.
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Submitted 1 December, 2020;
originally announced December 2020.
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High-temperature superconductivity on the verge of a structural instability in lanthanum superhydride
Authors:
Dan Sun,
Vasily S. Minkov,
Shirin Mozaffari,
Stella Chariton,
Vitali B. Prakapenka,
Mikhail I. Eremets,
Luis Balicas,
Fedor F. Balakirev
Abstract:
A possibility of high, room-temperature superconductivity was predicted for metallic hydrogen in the 1960s. However, metallization and superconductivity of hydrogen are yet to be unambiguously demonstrated in the laboratory and may require pressures as high as 5 million atmospheres. Rare earth based "superhydrides" such as LaH10 can be considered a close approximation of metallic hydrogen even tho…
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A possibility of high, room-temperature superconductivity was predicted for metallic hydrogen in the 1960s. However, metallization and superconductivity of hydrogen are yet to be unambiguously demonstrated in the laboratory and may require pressures as high as 5 million atmospheres. Rare earth based "superhydrides" such as LaH10 can be considered a close approximation of metallic hydrogen even though they form at moderately lower pressures. In superhydrides the predominance of H-H metallic bonds and high superconducting transition temperatures bear the hallmarks of metallic hydrogen. Still, experimental studies revealing the key factors controlling their superconductivity are scarce. Here, we report on the pressure and magnetic field response of the superconducting order observed in LaH10. For LaH10 we find a correlation between superconductivity and a structural instability, strongly affecting the lattice vibrations responsible for the superconductivity.
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Submitted 2 October, 2020; v1 submitted 30 September, 2020;
originally announced October 2020.
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Bulk Fermi surfaces of the Dirac type-II semimetallic candidate NiTe2
Authors:
Wenkai Zheng,
Rico Schönemann,
Shirin Mozaffari,
Yu-Che Chiu,
Zachary Bryce Goraum,
Niraj Aryal,
Efstratios Manousakis,
Theo M. Siegrist,
Kaya Wei,
Luis Balicas
Abstract:
Here, we present a study on the Fermi-surface of the Dirac type-II semi-metallic candidate NiTe$_2$ via the temperature and angular dependence of the de Haas-van Alphen (dHvA) effect measured in single-crystals grown through Te flux. In contrast to its isostructural compounds like PtSe$_2$, band structure calculations predict NiTe$_2$ to display a tilted Dirac node very close to its Fermi level th…
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Here, we present a study on the Fermi-surface of the Dirac type-II semi-metallic candidate NiTe$_2$ via the temperature and angular dependence of the de Haas-van Alphen (dHvA) effect measured in single-crystals grown through Te flux. In contrast to its isostructural compounds like PtSe$_2$, band structure calculations predict NiTe$_2$ to display a tilted Dirac node very close to its Fermi level that is located along the $Γ$ to A high symmetry direction within its first Brillouin zone (FBZ). The angular dependence of the dHvA frequencies is found to be in agreement with the first-principle calculations when the electronic bands are slightly shifted with respect to the Fermi level ($\varepsilon_F$), and therefore provide support for the existence of a Dirac type-II node in NiTe$_2$. Nevertheless, we observed mild disagreements between experimental observations and density Functional theory calculations as, for example, nearly isotropic and light experimental effective masses. This indicates that the dispersion of the bands is not well captured by DFT. Despite the coexistence of Dirac-like fermions with topologically trivial carriers, samples of the highest quality display an anomalous and large, either linear or sub-linear magnetoresistivity. This suggests that Lorentz invariance breaking Dirac-like quasiparticles dominate the carrier transport in this compound.
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Submitted 3 September, 2020; v1 submitted 2 September, 2020;
originally announced September 2020.
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Multiple Dirac Nodes and Symmetry Protected Dirac Nodal Line in Orthorhombic $α$-RhSi
Authors:
Shirin Mozaffari,
Niraj Aryal,
Rico Schönemann,
Kuan-Wen Chen,
Wenkai Zheng,
Gregory T. McCandless,
Julia Y. Chan,
Efstratios Manousakis,
Luis Balicas
Abstract:
Owing to their chiral cubic structure, exotic multifold topological excitations have been predicted and recently observed in transition metal silicides like $β$-RhSi. Herein, we report that the topological character of RhSi is also observed in its orthorhombic $α$-phase which displays multiple types of Dirac nodes very close to the Fermi level ($\varepsilon_F$) with the near absence of topological…
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Owing to their chiral cubic structure, exotic multifold topological excitations have been predicted and recently observed in transition metal silicides like $β$-RhSi. Herein, we report that the topological character of RhSi is also observed in its orthorhombic $α$-phase which displays multiple types of Dirac nodes very close to the Fermi level ($\varepsilon_F$) with the near absence of topologically trivial carriers. We discuss the symmetry analysis, band connectivity along high-symmetry lines using group representations, the band structure, and the nature of the Dirac points and nodal lines occurring near $\varepsilon_F$. The de Haas-van Alphen effect (dHvA) indicates a Fermi surface in agreement with the calculations. We find an elliptically-shaped nodal line very close to $\varepsilon_F$ around and near the $S$-point on the $k_y-k_z$ plane that results from the intersection of two upside-down Dirac cones. The two Dirac points of the participating Kramers degenerate bands are only 5 meV apart, hence an accessible magnetic field might induce a crossing between the spin-up partner of the upper-Dirac cone and the spin-down partner of the lower Dirac cone, possibly explaining the anomalies observed in the magnetic torque.
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Submitted 7 February, 2020;
originally announced February 2020.
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The Fermi surface of PtCoO2 from quantum oscillations and electronic structure calculations
Authors:
F. Arnold,
M. Naumann,
H. Rosner,
N. Kikugawa,
D. Graf,
L. Balicas,
T. Terashima,
S. Uji,
H. Takatsu,
S. Khim,
A. P. Mackenzie,
E. Hassinger
Abstract:
The delafossite series of layered oxides include some of the highest conductivity metals ever discovered. Of these, PtCoO2, with a room temperature resistivity of 1.8 microOhmcm for in-plane transport, is the most conducting of all. The high conduction takes place in triangular lattice Pt layers, separated by layers of Co-O octahedra, and the electronic structure is determined by the interplay of…
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The delafossite series of layered oxides include some of the highest conductivity metals ever discovered. Of these, PtCoO2, with a room temperature resistivity of 1.8 microOhmcm for in-plane transport, is the most conducting of all. The high conduction takes place in triangular lattice Pt layers, separated by layers of Co-O octahedra, and the electronic structure is determined by the interplay of the two types of layer. We present a detailed study of quantum oscillations in PtCoO2, at temperatures down to 35 mK and magnetic fields up to 30 T. As for PdCoO2 and PdRhO2, the Fermi surface consists of a single cylinder with mainly Pt character, and an effective mass close to the free electron value. Due to Fermi-surface warping, two close-lying high frequencies are observed. Additionally, a pronounced difference frequency appears. By analysing the detailed angular dependence of the quantum-oscillation frequencies, we establish the warping parameters of the Fermi surface. We compare these results to the predictions of first-principles electronic structure calculations including spin-orbit coupling on Pt and Co and on-site correlation U on Co, and hence demonstrate that electronic correlations in the Co-O layers play an important role in determining characteristic features of the electronic structure of PtCoO2.
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Submitted 30 December, 2019;
originally announced December 2019.
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Superconductivity up to 243 K in yttrium hydrides under high pressure
Authors:
P. P. Kong,
V. S. Minkov,
M. A. Kuzovnikov,
S. P. Besedin,
A. P. Drozdov,
S. Mozaffari,
L. Balicas,
F. F. Balakirev,
V. B. Prakapenka,
E. Greenberg,
D. A. Knyazev,
M. I. Eremets
Abstract:
The discovery of high-temperature conventional superconductivity in H3S with a critical temperature of Tc=203 K was followed by the recent record of Tc ~250 K in the face-centered cubic (fcc) lanthanum hydride LaH10 compound. It was realized in a new class of hydrogen-dominated compounds having a clathrate-like crystal structure in which hydrogen atoms form a 3D framework and surround a host atom…
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The discovery of high-temperature conventional superconductivity in H3S with a critical temperature of Tc=203 K was followed by the recent record of Tc ~250 K in the face-centered cubic (fcc) lanthanum hydride LaH10 compound. It was realized in a new class of hydrogen-dominated compounds having a clathrate-like crystal structure in which hydrogen atoms form a 3D framework and surround a host atom of rare earth elements. Yttrium hydrides are predicted to have even higher Tc exceeding room temperature. In this paper, we synthesized and refined the crystal structure of new hydrides: YH4, YH6, and YH9 at pressures up to 237 GPa finding that YH4 crystalizes in the I4/mmm lattice, YH6 in Im-3m lattice and YH9 in P63/mmc lattice in excellent agreement with the calculations. The observed very high-temperature superconductivity is comparable to that found in fcc-LaH10: the pressure dependence of Tc for YH9 also displays a "dome like shape" with the highest Tc of 243 K at 201 GPa. We also observed a Tc of 227 K at 237 GPa for the YH6 phase. However, the measured Tcs are notably lower by ~30 K than predicted. Evidence for superconductivity includes the observation of zero electrical resistance, a decrease of Tc under an external magnetic field and an isotope effect. The theoretically predicted fcc YH10 with the promising highest Tc>300 K was not stabilized in our experiments under pressures up to 237 GPa.
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Submitted 23 September, 2019;
originally announced September 2019.
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Enhanced Superconductivity in Monolayer $T_d$-MoTe$_2$ with Tilted Ising Spin Texture
Authors:
Daniel Rhodes,
Noah F. Yuan,
Younghun Jung,
Abhinandan Antony,
Hua Wang,
Bumho Kim,
Yu-che Chiu,
Takashi Taniguchi,
Kenji Watanabe,
Katayun Barmak,
Luis Balicas,
Cory R. Dean,
Xiaofeng Qian,
Liang Fu,
Abhay N. Pasupathy,
James Hone
Abstract:
Crystalline two-dimensional (2D) superconductors with low carrier density are an exciting new class of materials in which superconductivity coexists with strong interactions, the effects of complex topology are not obscured by disorder, and electronic properties can be strongly tuned by electrostatic gating. Very recently, two such materials, 'magic-angle' twisted bilayer graphene and monolayer…
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Crystalline two-dimensional (2D) superconductors with low carrier density are an exciting new class of materials in which superconductivity coexists with strong interactions, the effects of complex topology are not obscured by disorder, and electronic properties can be strongly tuned by electrostatic gating. Very recently, two such materials, 'magic-angle' twisted bilayer graphene and monolayer $T_d$-WTe$_2$, have been reported to show superconductivity at temperatures near 1 K. Here we report superconductivity in semimetallic monolayer $T_d$-MoTe$_2$. The critical temperature $T_\textrm{c}$ reaches 8 K, a sixty-fold enhancement as compared to the bulk. This anomalous increase in $T_\textrm{c}$ is only observed in monolayers, and may be indicative of electronically mediated pairing. Reflecting the low carrier density, the critical temperature, magnetic field, and current density are all tunable by an applied gate voltage, revealing a superconducting dome that extends across both hole and electron pockets. The temperature dependence of the in-plane upper critical field is distinct from that of $2H$ transition metal dichalcogenides (TMDs), consistent with a tilted spin texture as predicted by \textit{ab initio} theory.
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Submitted 19 August, 2020; v1 submitted 15 May, 2019;
originally announced May 2019.
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Origin of the butterfly magnetoresistance in a Dirac nodal-line system
Authors:
Y. -C. Chiu,
K. -W. Chen,
R. Schönemann,
V. L. Quito,
S. Sur,
Q. Zhou,
D. Graf,
E. Kampert,
T. Förster,
K. Yang,
G. T. McCandless,
Julia Y. Chan,
R. E. Baumbach,
M. D. Johannes,
L. Balicas
Abstract:
We report a study on the magnetotransport properties and on the Fermi surfaces (FS) of the ZrSi(Se,Te) semimetals. Density Functional Theory (DFT) calculations, in absence of spin orbit coupling (SOC), reveal that both the Se and the Te compounds display Dirac nodal lines (DNL) close to the Fermi level $\varepsilon_F$ at symmorphic and non-symmorphic positions, respectively. We find that the geome…
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We report a study on the magnetotransport properties and on the Fermi surfaces (FS) of the ZrSi(Se,Te) semimetals. Density Functional Theory (DFT) calculations, in absence of spin orbit coupling (SOC), reveal that both the Se and the Te compounds display Dirac nodal lines (DNL) close to the Fermi level $\varepsilon_F$ at symmorphic and non-symmorphic positions, respectively. We find that the geometry of their FSs agrees well with DFT predictions. ZrSiSe displays low residual resistivities, pronounced magnetoresistivity, high carrier mobilities, and a butterfly-like angle-dependent magnetoresistivity (AMR), although its DNL is not protected against gap opening. As in Cd$_3$As$_2$, its transport lifetime is found to be 10$^2$ to 10$^3$ times larger than its quantum one. ZrSiTe, which possesses a protected DNL, displays conventional transport properties. Our evaluation indicates that both compounds most likely are topologically trivial. Nearly angle-independent effective masses with strong angle dependent quantum lifetimes lead to the butterfly AMR in ZrSiSe.
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Submitted 22 April, 2019;
originally announced April 2019.
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Enhanced Optoelectronic Response in Bilayer Lateral Heterostructures of Transition Metal Dichalcogenides
Authors:
Prasana K. Sahoo,
Shahriar Memaran,
Yan Xin,
Tania Díaz Márquez,
Florence Ann Nugera,
Zhengguang Lu,
Wenkai Zheng,
Nikolai D. Zhigadlo,
Dmitry Smirnov,
Luis Balicas,
Humberto R. Gutiérrez
Abstract:
Two-dimensional lateral heterojunctions are basic components for low-power and flexible optoelectronics. In contrast to monolayers, devices based on few-layer lateral heterostructures could offer superior performance due to their lower susceptibility to environmental conditions. Here, we report the controlled synthesis of multi-junction bilayer lateral heterostructures based on MoS2-WS2 and MoSe2-…
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Two-dimensional lateral heterojunctions are basic components for low-power and flexible optoelectronics. In contrast to monolayers, devices based on few-layer lateral heterostructures could offer superior performance due to their lower susceptibility to environmental conditions. Here, we report the controlled synthesis of multi-junction bilayer lateral heterostructures based on MoS2-WS2 and MoSe2-WSe2, where the hetero-junctions are created via sequential lateral edge-epitaxy that happens simultaneously in both the first and the second layer. With respect to their monolayer counterparts, bilayer lateral heterostructures yield nearly one order of magnitude higher rectification currents. They also display a clear photovoltaic response, with short circuit currents ~103 times larger than those extracted from the monolayers, in addition to room-temperature electroluminescence. The superior performance of bilayer heterostructures significantly expands the functionalities of 2D crystals.
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Submitted 30 March, 2019;
originally announced April 2019.
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Bulk Fermi surface of the type-II Weyl semimetal candidate NbIrTe$_{4}$
Authors:
Rico Schönemann,
Yu-Che Chiu,
Wenkai Zheng,
Victor Quito,
Shouvik Sur,
Gregory T. McCandless,
Julia Y. Chan,
Luis Balicas
Abstract:
Recently, a new group of layered transition-metal tetra-chalcogenides were proposed, via first principles calculations, to correspond to a new family of Weyl type-II semimetals with promising topological properties in the bulk as well as in the monolayer limit. In this article, we present measurements of the Shubnikov-de Haas (SdH) and de Haas-van Alphen effects under high magnetic fields for the…
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Recently, a new group of layered transition-metal tetra-chalcogenides were proposed, via first principles calculations, to correspond to a new family of Weyl type-II semimetals with promising topological properties in the bulk as well as in the monolayer limit. In this article, we present measurements of the Shubnikov-de Haas (SdH) and de Haas-van Alphen effects under high magnetic fields for the type-II Weyl semimetallic candidate NbIrTe$_{4}$. We find that the angular dependence of the observed Fermi surface extremal cross-sectional areas agree well with our DFT calculations supporting the existence of Weyl type-II points in this material. Although we observe a large and non-saturating magnetoresistivity in NbIrTe$_{4}$ under fields all the way up to 35 T, Hall-effect measurements indicate that NbIrTe$_{4}$ is not a compensated semimetal. The transverse magnetoresistivity displays a four-fold angular dependence akin to the so-called butterfly magnetoresistivity observed in nodal line semimetals. However, we conclude that its field and this unconventional angular-dependence are governed by the topography of the Fermi-surface and the resulting anisotropy in effective masses and in carrier mobilities.
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Submitted 1 August, 2019; v1 submitted 16 February, 2019;
originally announced February 2019.
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Superconducting Phase-Diagram of H3S under High Magnetic Fields
Authors:
Shirin Mozaffari,
Dan Sun,
Vasily S. Minkov,
Dmitry Knyazev,
Jonathan B. Betts,
Mari Einaga,
Katsuya Shimizu,
Mikhail I. Eremets,
Luis Balicas,
Fedor F. Balakirev
Abstract:
We report the temperature dependence of the upper critical fields $μ_0H_{c2}(T)$ of the high temperature superconductor H$_3$S under applied pressures of 155 and 160 GPa through the electrical resistance transition observed under DC and pulsed magnetic fields up to 65 T, a record high combination of fields and pressures. We find that $H_{c2}(T)$ generally follows the Werthamer, Helfand and Hohenbe…
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We report the temperature dependence of the upper critical fields $μ_0H_{c2}(T)$ of the high temperature superconductor H$_3$S under applied pressures of 155 and 160 GPa through the electrical resistance transition observed under DC and pulsed magnetic fields up to 65 T, a record high combination of fields and pressures. We find that $H_{c2}(T)$ generally follows the Werthamer, Helfand and Hohenberg (WHH) formalism at low fields, albeit with noticeable deviations upon approaching our experimental limit of $μ_0H = 65$ T. In fact, $H_{c2}(T)$ displays a remarkably linear dependence on temperature over an extended temperature range also found in multigap or in strongly-coupled superconductors. The best fit of $H_{c2}(T)$ to the WHH formula yields a negligible value for the Maki parameter $α$ and for spin-orbit scattering constant $λ_{\text{SO}}$. However, its behavior is relatively well-described by a model based on strong coupling superconductivity with a coupling constant $λ\sim 2$. Therefore, we conclude that H$_3$S behaves as a strong-coupled orbital-limited superconductor over the entire range of temperatures and fields used for our measurements.
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Submitted 30 January, 2019;
originally announced January 2019.
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Superconductivity at 250 K in lanthanum hydride under high pressures
Authors:
A. P. Drozdov,
P. P. Kong,
V. S. Minkov,
S. P. Besedin,
M. A. Kuzovnikov,
S. Mozaffari,
L. Balicas,
F. Balakirev,
D. Graf,
V. B. Prakapenka,
E. Greenberg,
D. A. Knyazev,
M. Tkacz,
M. I. Eremets
Abstract:
The discovery of superconductivity at 203 K in H3S brought attention back to conventional superconductors whose properties can be described by the Bardeen-Cooper-Schrieffer (BCS) and the Migdal-Eliashberg theories. These theories predict that high, and even room temperature superconductivity (RTSC) is possible in metals possessing certain favorable parameters such as lattice vibrations at high fre…
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The discovery of superconductivity at 203 K in H3S brought attention back to conventional superconductors whose properties can be described by the Bardeen-Cooper-Schrieffer (BCS) and the Migdal-Eliashberg theories. These theories predict that high, and even room temperature superconductivity (RTSC) is possible in metals possessing certain favorable parameters such as lattice vibrations at high frequencies. However, these general theories do not suffice to predict real superconductors. New superconducting materials can be predicted now with the aid of first principles calculations based on Density Functional Theory (DFT). In particular, the calculations suggested a new family of hydrides possessing a clathrate structure, where the host atom (Ca, Y, La) is at the center of the cage formed by hydrogen atoms. For LaH10 and YH10 superconductivity, with critical temperatures Tc ranging between 240 and 320 K is predicted at megabar pressures. Here, we report superconductivity with a record Tc ~ 250 K within the Fm-3m structure of LaH10 at a pressure P ~ 170 GPa. We proved the existence of superconductivity at 250 K through the observation of zero-resistance, isotope effect, and the decrease of Tc under an external magnetic field, which suggests an upper critical magnetic field of 120 T at zero-temperature. The pressure dependence of the transition temperatures Tc (P) has a maximum of 250-252 K at the pressure of about 170 GPa. This leap, by ~ 50 K, from the previous Tc record of 203 K indicates the real possibility of achieving RTSC (that is at 273 K) in the near future at high pressures and the perspective of conventional superconductivity at ambient pressure.
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Submitted 4 December, 2018;
originally announced December 2018.
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Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors
Authors:
Nihar R. Pradhan,
Carlos Garcia,
Bridget Isenberg,
Daniel Rhodes,
Simin Feng,
Shahriar Memaran,
Yan Xin,
Amber McCreary,
Angela R. Hight Walker,
Aldo Raeliarijaona,
Humberto Terrones,
Mauricio Terrones,
Stephen McGill,
Luis Balicas
Abstract:
We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract field-effect carrier mobilities in excess of 10^2 cm^2/Vs at room temperature in crystals with nearly ~10 atomic layers. These thicker FETs also show nearly zero thresho…
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We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract field-effect carrier mobilities in excess of 10^2 cm^2/Vs at room temperature in crystals with nearly ~10 atomic layers. These thicker FETs also show nearly zero threshold gate voltage for conduction and high ON to OFF current ratios when compared to the FETs built from thinner layers. We also demonstrate that it is possible to utilize this ambipolarity to fabricate logical elements or digital synthesizers. For instance, we demonstrate that one can produce simple, gate-voltage tunable phase modulators with the ability to shift the phase of the input signal by either 90^o or nearly 180^o. Given that it is possible to engineer these same elements with improved architectures, for example on h-BN in order to decrease the threshold gate voltage and increase the carrier mobilities, it is possible to improve their characteristics in order to engineer ultra-thin layered logic elements based on ReSe2.
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Submitted 10 August, 2018;
originally announced August 2018.
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Giant Anisotropic Magnetoresistance due to Purely Orbital Rearrangement in the Quadrupolar Heavy Fermion Superconductor PrV$_2$Al$_{20}$
Authors:
Yasuyuki Shimura,
Qiu Zhang,
Bin Zeng,
Daniel Rhodes,
Rico Uwe Schonemann,
Masaki Tsujimoto,
Yosuke Matsumoto,
Akito Sakai,
Toshiro Sakakibara,
Koji Araki,
Wenkai Zheng,
Qiong Zhou,
Luis Balicas,
Satoru Nakatsuji
Abstract:
We report the discovery of giant and anisotropic magnetoresistance due to the orbital rearrangement in a non-magnetic correlated metal. In particular, we measured the magnetoresistance under fields up to 31.4 T in the cubic Pr-based heavy fermion superconductor PrV$_2$Al$_{20}$ with a non-magnetic $Γ_3$ doublet ground state, exhibiting antiferro-quadrupole ordering below 0.7 K. For the [100] direc…
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We report the discovery of giant and anisotropic magnetoresistance due to the orbital rearrangement in a non-magnetic correlated metal. In particular, we measured the magnetoresistance under fields up to 31.4 T in the cubic Pr-based heavy fermion superconductor PrV$_2$Al$_{20}$ with a non-magnetic $Γ_3$ doublet ground state, exhibiting antiferro-quadrupole ordering below 0.7 K. For the [100] direction, we find that the high-field phase appears between 12 T and 25 T, accompanied by a large jump at 12 T in the magnetoresistance ($ΔMR \sim $ 100 $\% $) and in the anisotropic magnetoresistivity (AMR) ratio by $\sim $ 20 $\% $. These observations indicate that the strong hybridization between the conduction electrons and anisotropic quadrupole moments leads to the Fermi surface reconstruction upon crossing the field-induced antiferro-quadrupole (orbital) rearrangement.
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Submitted 10 May, 2018;
originally announced May 2018.
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Hundredfold Enhancement of Light Emission via Defect Control in Monolayer Transition-Metal Dichalcogenides
Authors:
D. Edelberg,
D. Rhodes,
A. Kerelsky,
B. Kim,
J. Wang,
A. Zangiabadi,
C. Kim,
A. Abhinandan,
J. Ardelean,
M. Scully,
D. Scullion,
L. Embon,
I. Zhang,
R. Zu,
Elton J. G. Santos,
L. Balicas,
C. Marianetti,
K. Barmak,
X. -Y. Zhu,
J. Hone,
A. N. Pasupathy
Abstract:
Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties, and potential for applications. In this work, we characterize the atomic and electronic nature of intrinsic point defects found in single crystals of these materials synthesized by two different methods - chemical vapor transpo…
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Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties, and potential for applications. In this work, we characterize the atomic and electronic nature of intrinsic point defects found in single crystals of these materials synthesized by two different methods - chemical vapor transport and self-flux growth. Using a combination of scanning tunneling microscopy (STM) and scanning transmission electron microscopy (STEM), we show that the two major intrinsic defects in these materials are metal vacancies and chalcogen antisites. We show that by control of the synthetic conditions, we can reduce the defect concentration from above $10^{13} /cm^2$ to below $10^{11} /cm^2$. Because these point defects act as centers for non-radiative recombination of excitons, this improvement in material quality leads to a hundred-fold increase in the radiative recombination efficiency.
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Submitted 30 April, 2018;
originally announced May 2018.
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Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2
Authors:
W. Zheng,
R. Schönemann,
N. Aryal,
Q. Zhou,
D. Rhodes,
Y. -C. Chiu,
K. -W. Chen,
E. Kampert,
T. Förster,
T. J. Martin,
G. T. McCandless,
J. Y. Chan,
E. Manousakis,
L. Balicas
Abstract:
We present a detailed quantum oscillatory study on the Dirac type-II semimetallic candidates PdTe$_{2}$ and PtTe$_{2}$ \emph{via} the temperature and the angular dependence of the de Haas-van Alphen (dHvA) and Shubnikov-de Haas (SdH) effects. In high quality single crystals of both compounds, i.e. displaying carrier mobilities between $10^3$ and $10^4$ cm$^2$/Vs, we observed a large non-saturating…
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We present a detailed quantum oscillatory study on the Dirac type-II semimetallic candidates PdTe$_{2}$ and PtTe$_{2}$ \emph{via} the temperature and the angular dependence of the de Haas-van Alphen (dHvA) and Shubnikov-de Haas (SdH) effects. In high quality single crystals of both compounds, i.e. displaying carrier mobilities between $10^3$ and $10^4$ cm$^2$/Vs, we observed a large non-saturating magnetoresistivity (MR) which in PtTe$_2$ at a temperature $T = 1.3$ K, leads to an increase in the resistivity up to $5 \times 10^{4}$ % under a magnetic field $μ_0 H = 62$ T. These high mobilities correlate with their light effective masses in the range of 0.04 to 1 bare electron mass according to our measurements. For PdTe$_{2}$ the experimentally determined Fermi surface cross-sectional areas show an excellent agreement with those resulting from band-structure calculations. Surprisingly, this is not the case for PtTe$_{2}$ whose agreement between calculations and experiments is relatively poor even when electronic correlations are included in the calculations. Therefore, our study provides a strong support for the existence of a Dirac type-II node in PdTe$_2$ and probably also for PtTe$_2$. Band structure calculations indicate that the topologically non-trivial bands of PtTe$_2$ do not cross the Fermi-level ($\varepsilon_F$). In contrast, for PdTe$_2$ the Dirac type-II cone does intersect $\varepsilon_F$, although our calculations also indicate that the associated cyclotron orbit on the Fermi surface is located in a distinct $k_z$ plane with respect to the one of the Dirac type-II node. Therefore it should yield a trivial Berry-phase.
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Submitted 30 April, 2018;
originally announced May 2018.
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Anomalous metamagnetism in the low carrier density Kondo lattice YbRh3Si7
Authors:
Binod K. Rai,
S. Chikara,
Xiaxin Ding,
Iain W. H. Oswald,
R. Schoenemann,
V. Loganathan,
A. M. Hallas,
H. B. Cao,
M. Stavinoha,
Haoran Man,
Scott Carr,
John Singleton,
Vivien Zapf,
Katherine Benavides,
Julia Y. Chan,
Q. R. Zhang,
D. Rhodes,
Y. C. Chiu,
Luis Balicas,
A. A. Aczel,
Q. Huang,
Jeffrey W. Lynn,
J. Gaudet,
D. A. Sokolov,
Pengcheng Dai
, et al. (3 additional authors not shown)
Abstract:
We report complex metamagnetic transitions in single crystals of the new low carrier Kondo antiferromagnet YbRh3Si7. Electrical transport, magnetization, and specific heat measurements reveal antiferromagnetic order at T_N = 7.5 K. Neutron diffraction measurements show that the magnetic ground state of YbRh3Si7 is a collinear antiferromagnet where the moments are aligned in the ab plane. With such…
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We report complex metamagnetic transitions in single crystals of the new low carrier Kondo antiferromagnet YbRh3Si7. Electrical transport, magnetization, and specific heat measurements reveal antiferromagnetic order at T_N = 7.5 K. Neutron diffraction measurements show that the magnetic ground state of YbRh3Si7 is a collinear antiferromagnet where the moments are aligned in the ab plane. With such an ordered state, no metamagnetic transitions are expected when a magnetic field is applied along the c axis. It is therefore surprising that high field magnetization, torque, and resistivity measurements with H||c reveal two metamagnetic transitions at mu_0H_1 = 6.7 T and mu_0H_2 = 21 T. When the field is tilted away from the c axis, towards the ab plane, both metamagnetic transitions are shifted to higher fields. The first metamagnetic transition leads to an abrupt increase in the electrical resistivity, while the second transition is accompanied by a dramatic reduction in the electrical resistivity. Thus, the magnetic and electronic degrees of freedom in YbRh3Si7 are strongly coupled. We discuss the origin of the anomalous metamagnetism and conclude that it is related to competition between crystal electric field anisotropy and anisotropic exchange interactions.
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Submitted 17 May, 2018; v1 submitted 11 March, 2018;
originally announced March 2018.
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Bulk Fermi surfaces of the Dirac Type-II Semimetallic Candidates VAl3, NbAl3 and TaAl3
Authors:
K. -W. Chen,
X. Lian,
Y. Lai,
N. Aryal,
Y. -C. Chiu,
W. Lan,
D. Graf,
E. Manousakis,
R. E. Baumbach,
L. Balicas
Abstract:
We report a de Haas-van Alphen (dHvA) effect study on the Dirac type-II semimetallic candidates \emph{M}Al$_3$ (where, \emph{M} = V, Nb and Ta). The angular-dependence of their Fermi surface (FS) cross-sectional areas reveals a remarkably good agreement with first-principle calculations. Therefore, dHvA supports the existence of tilted Dirac cones with Dirac type-II nodes located at 100, 230 and 2…
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We report a de Haas-van Alphen (dHvA) effect study on the Dirac type-II semimetallic candidates \emph{M}Al$_3$ (where, \emph{M} = V, Nb and Ta). The angular-dependence of their Fermi surface (FS) cross-sectional areas reveals a remarkably good agreement with first-principle calculations. Therefore, dHvA supports the existence of tilted Dirac cones with Dirac type-II nodes located at 100, 230 and 250 meV above the Fermi level $\varepsilon_F$ for VAl$_3$, NbAl$_3$ and TaAl$_3$ respectively, in agreement with the prediction of broken Lorentz invariance in these compounds. However, for all three compounds we find that the cyclotron orbits on their FSs, including an orbit nearly enclosing the Dirac type-II node, yield trivial Berry phases. We explain this $via$ an analysis of the Berry phase where the position of this orbit, relative to the Dirac node, is adjusted within the error implied by the small disagreement between our calculations and the experiments. We suggest that a very small amount of doping could displace $\varepsilon_F$ to produce topologically non-trivial orbits encircling their Dirac node(s).
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Submitted 6 March, 2018; v1 submitted 1 March, 2018;
originally announced March 2018.
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Evidence for negative thermal expansion in the superconducting precursor phase SmFeAsO
Authors:
H. D. Zhou,
P. M. Sarte,
B. S. Conner,
L. Balicas,
C. R. Wiebe,
X. H. Chen,
T. Wu,
G. Wu,
R. H. Liu,
H. Chen,
D. F. Fang
Abstract:
The fluorine-doped rare-earth iron oxypnictide series SmFeAsO$_{1-x}$F$_x$ (0 $\leq x \leq$ 0.10) was investigated with high resolution powder x-ray scattering. In agreement with previous studies, the parent compound SmFeAsO exhibits a tetragonal-to-orthorhombic structural distortion at T$\rm{_{S}}$~=~130~K which is rapidly suppressed by $x \simeq$ 0.10 deep within the superconducting dome. The ch…
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The fluorine-doped rare-earth iron oxypnictide series SmFeAsO$_{1-x}$F$_x$ (0 $\leq x \leq$ 0.10) was investigated with high resolution powder x-ray scattering. In agreement with previous studies, the parent compound SmFeAsO exhibits a tetragonal-to-orthorhombic structural distortion at T$\rm{_{S}}$~=~130~K which is rapidly suppressed by $x \simeq$ 0.10 deep within the superconducting dome. The change in unit cell symmetry is followed by a previously unreported magnetoelastic distortion at 120~K. The temperature dependence of the thermal expansion coefficient $α_{V}$ reveals a rich phase diagram for SmFeAsO: (i) a global minimum at 125 K corresponds to the opening of a spin-density wave instability as measured by pump-probe femtosecond spectroscopy whilst (ii) a global maximum at 110 K corresponds to magnetic ordering of the Sm and Fe sublattices as measured by magnetic x-ray scattering. At much lower temperatures than T$\rm{_{N}}$, SmFeAsO exhibits a significant negative thermal expansion on the order of -40~ppm~$\cdot$~K$^{-1}$ in contrast to the behavior of other rare-earth oxypnictides such as PrFeAsO and the actinide oxypnictide NpFeAsO where the onset of $α<$ 0 only appears in the vicinity of magnetic ordering. Correlating this feature with the temperature and doping dependence of the resistivity and the unit cell parameters, we interpret the negative thermal expansion as being indicative of the possible condensation of itinerant electrons accompanying the opening of a SDW gap, consistent with transport measurements.
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Submitted 23 February, 2018;
originally announced February 2018.
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Converting topological insulators into topological metals within the tetradymite family
Authors:
K. -W. Chen,
N. Aryal,
J. Dai,
D. Graf,
S. Zhang,
S. Das,
P. Le Fevre,
F. Bertran,
R. Yukawa,
K. Horiba,
H. Kumigashira,
E. Frantzeskakis,
F. Fortuna,
L. Balicas,
A. F. Santander-Syro,
E. Manousakis,
R. E. Baumbach
Abstract:
We report the electronic band structures and concomitant Fermi surfaces for a family of exfoliable tetradymite compounds with the formula $T_2$$Ch_2$$Pn$, obtained as a modification to the well-known topological insulator binaries Bi$_2$(Se,Te)$_3$ by replacing one chalcogen ($Ch$) with a pnictogen ($Pn$) and Bi with the tetravalent transition metals $T$ $=$ Ti, Zr, or Hf. This imbalances the elec…
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We report the electronic band structures and concomitant Fermi surfaces for a family of exfoliable tetradymite compounds with the formula $T_2$$Ch_2$$Pn$, obtained as a modification to the well-known topological insulator binaries Bi$_2$(Se,Te)$_3$ by replacing one chalcogen ($Ch$) with a pnictogen ($Pn$) and Bi with the tetravalent transition metals $T$ $=$ Ti, Zr, or Hf. This imbalances the electron count and results in layered metals characterized by relatively high carrier mobilities and bulk two-dimensional Fermi surfaces whose topography is well-described by first principles calculations. Intriguingly, slab electronic structure calculations predict Dirac-like surface states. In contrast to Bi$_2$Se$_3$, where the surface Dirac bands are at the $Γ-$point, for (Zr,Hf)$_2$Te$_2$(P,As) there are Dirac cones of strong topological character around both the $\bar Γ$- and $\bar {M}$-points which are above and below the Fermi energy, respectively. For Ti$_2$Te$_2$P the surface state is predicted to exist only around the $\bar {M}$-point. In agreement with these predictions, the surface states that are located below the Fermi energy are observed by angle resolved photoemission spectroscopy measurements, revealing that they coexist with the bulk metallic state. Thus, this family of materials provides a foundation upon which to develop novel phenomena that exploit both the bulk and surface states (e.g., topological superconductivity).
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Submitted 11 November, 2017;
originally announced November 2017.
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Fermi surface in the absence of a Fermi liquid in the Kondo insulator SmB$_6$
Authors:
M. Hartstein,
W. H. Toews,
Y. -T. Hsu,
B. Zeng,
X. Chen,
M. Ciomaga Hatnean,
Q. R. Zhang,
S. Nakamura,
A. S. Padgett,
G. Rodway-Gant,
J. Berk,
M. K. Kingston,
G. H. Zhang,
M. K. Chan,
S. Yamashita,
T. Sakakibara,
Y. Takano,
J. -H. Park,
L. Balicas,
N. Harrison,
N. Shitsevalova,
G. Balakrishnan,
G. G. Lonzarich,
R. W. Hill,
M. Sutherland
, et al. (1 additional authors not shown)
Abstract:
The search for a Fermi surface in the absence of a conventional Fermi liquid has thus far yielded very few potential candidates. Among promising materials are spin-frustrated Mott insulators near the insulator-metal transition, where theory predicts a Fermi surface associated with neutral low energy excitations. Here we reveal another route to experimentally realise a Fermi surface in the absence…
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The search for a Fermi surface in the absence of a conventional Fermi liquid has thus far yielded very few potential candidates. Among promising materials are spin-frustrated Mott insulators near the insulator-metal transition, where theory predicts a Fermi surface associated with neutral low energy excitations. Here we reveal another route to experimentally realise a Fermi surface in the absence of a Fermi liquid by the experimental study of a Kondo insulator SmB$_6$ positioned close to the insulator-metal transition. We present experimental signatures down to low temperatures ($\ll 1$ K) associated with a Fermi surface in the bulk, including a sizeable linear specific heat coefficient, and on the application of a finite magnetic field, bulk magnetic quantum oscillations, finite quantum oscillatory entropy, and substantial enhancement in thermal conductivity well below the charge gap energy scale. Thus, the weight of evidence indicates that despite an extreme instance of Fermi liquid breakdown in Kondo insulating SmB$_6$, a Fermi surface arises from novel itinerant low energy excitations that couple to magnetic fields, but not weak DC electric fields.
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Submitted 23 October, 2017;
originally announced October 2017.
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Van der Waals Schottky barriers as interface probes of the correlation between chemical potential shifts and charge density wave formation in 1T-TiSe$_2$ and 2H-NbSe$_2$
Authors:
Ang J. Li,
Xiaochen Zhu,
Daniel Rhodes,
Christopher C. Samouce,
Luis Balicas,
Arthur F. Hebard
Abstract:
Layered transition metal dichalcogenide (TMD) materials, i.e. 1T-TiSe$_2$ and 2H-NbSe$_2$, harbor a second order charge density wave (CDW) transition where phonons play a key role for the periodic modulations of conduction electron densities and associated lattice distortions. We systematically study the transport and capacitance characteristics over a wide temperature range of Schottky barriers f…
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Layered transition metal dichalcogenide (TMD) materials, i.e. 1T-TiSe$_2$ and 2H-NbSe$_2$, harbor a second order charge density wave (CDW) transition where phonons play a key role for the periodic modulations of conduction electron densities and associated lattice distortions. We systematically study the transport and capacitance characteristics over a wide temperature range of Schottky barriers formed by intimately contacting freshly exfoliated flakes of 1T-TiSe$_2$ and 2H-NbSe$_2$ to \textit{n}-type GaAs semiconductor substrates. The extracted temperature-dependent parameters (zero-bias barrier height, ideality and built-in potential) reflect changes at the TMD/GaAs interface induced by CDW formation for both TMD materials. The measured built-in potential reveals chemical-potential shifts relating to CDW formation. With decreasing temperature a peak in the chemical-potential shifts during CDW evolution indicates a competition between electron energy re-distributions and a combination of lattice strain energies and Coulomb interactions. These modulations of chemical potential in CDW systems, such as 1T-TiSe$_2$ and 2H-NbSe$_2$ harboring second-order phase transitions, reflect a corresponding conversion from short to long-range order.
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Submitted 25 August, 2017;
originally announced August 2017.
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Magnetic anisotropy of the alkali iridate Na$_{2}$IrO$_{3}$ at high magnetic fields: evidence for strong ferromagnetic Kitaev correlations
Authors:
Sitikantha. D Das,
Sarbajaya Kundu,
Zengwei Zhu,
Eundeok Mun,
Ross D. McDonald,
Gang Li,
Luis Balicas,
Alix McCollam,
Gang Cao,
Jeffrey. G. Rau,
Hae-Young Kee,
Vikram Tripathi,
Suchitra E. Sebastian
Abstract:
The magnetic field response of the Mott-insulating honeycomb iridate Na$_{2}$IrO$_{3}$ is investigated using torque magnetometry measurements in magnetic fields up to 60 tesla. A peak-dip structure is observed in the torque response at magnetic fields corresponding to an energy scale close to the zigzag ordering ($\approx 15~K$) temperature. Using exact diagonalization calculations, we show that s…
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The magnetic field response of the Mott-insulating honeycomb iridate Na$_{2}$IrO$_{3}$ is investigated using torque magnetometry measurements in magnetic fields up to 60 tesla. A peak-dip structure is observed in the torque response at magnetic fields corresponding to an energy scale close to the zigzag ordering ($\approx 15~K$) temperature. Using exact diagonalization calculations, we show that such a distinctive signature in the torque response constrains the effective spin models for these classes of Kitaev materials to ones with dominant ferromagnetic Kitaev interactions, while alternative models with dominant antiferromagnetic Kitaev interactions are excluded. We further show that at high magnetic fields, long range spin correlation functions decay rapidly, signaling a transition to a long-sought-after field-induced quantum spin liquid beyond the peak-dip structure. Kitaev systems are thus revealed to be excellent candidates for field-induced quantum spin liquids, similar physics having been suggested in another Kitaev material $α-$RuCl$_{3}$.
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Submitted 24 October, 2018; v1 submitted 10 August, 2017;
originally announced August 2017.
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Fermi surface of the Weyl type-II metallic candidate WP2
Authors:
R. Schönemann,
N. Aryal,
Q. Zhou,
Y. -C. Chiu,
K. -W. Chen,
T. J. Martin,
G. T. McCandless,
J. Y. Chan,
E. Manousakis,
L. Balicas
Abstract:
Weyl type-II fermions are massless quasiparticles that obey the Weyl equation and which are predicted to occur at the boundary between electron- and hole-pockets in certain semi-metals, i.e. the (W,Mo)(Te,P)$_2$ compounds. Here, we present a study of the Fermi-surface of WP$_2$ \emph{via} the Shubnikov-de Haas (SdH) effect. Compared to other semi-metals WP$_2$ exhibits a very low residual resistiv…
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Weyl type-II fermions are massless quasiparticles that obey the Weyl equation and which are predicted to occur at the boundary between electron- and hole-pockets in certain semi-metals, i.e. the (W,Mo)(Te,P)$_2$ compounds. Here, we present a study of the Fermi-surface of WP$_2$ \emph{via} the Shubnikov-de Haas (SdH) effect. Compared to other semi-metals WP$_2$ exhibits a very low residual resistivity, i.e. $ρ_0 \simeq 10$ n$Ω$cm, which leads to perhaps the largest non-saturating magneto-resistivity $(ρ(H))$ reported for any compound. For the samples displaying the smallest $ρ_0$, $ρ(H)$ is observed to increase by a factor of $2.5 \times 10^{7}$ $\%$ under $μ_{0}H = 35$ T at $T = 0.35$ K. The angular dependence of the SdH frequencies is found to be in very good agreement with the first-principle calculations when the electron- and hole-bands are slightly shifted with respect to the Fermi level, thus supporting the existence of underlying Weyl type-II points in WP$_2$.
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Submitted 3 July, 2017; v1 submitted 14 June, 2017;
originally announced June 2017.
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Sequential Edge-Epitaxy in 2D Lateral Heterostructures
Authors:
Prasana K. Sahoo,
Shahriar Memaran,
Yan Xin,
Luis Balicas,
Humberto R. Gutiérrez
Abstract:
Two-dimensional (2D) heterojunctions display a remarkable potential for application in high performance, low power electro-optical systems. p-n junctions based on vertically stacked heterostructures have shown very promising performance as tunneling transistors, light emitting devices and photodetectors, and as photovoltaic cells . Although complex vertical heterostructures were fabricated via van…
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Two-dimensional (2D) heterojunctions display a remarkable potential for application in high performance, low power electro-optical systems. p-n junctions based on vertically stacked heterostructures have shown very promising performance as tunneling transistors, light emitting devices and photodetectors, and as photovoltaic cells . Although complex vertical heterostructures were fabricated via van der Waals stacking of different 2D materials, atomically sharp multi-junctions in lateral heterostructures is a quite challenging task, but a viable route towards the development of commercial applications. Previously reported approaches to obtain single-junction lateral heterostructures of the type MoX2-WX2 (X= S and/or Se), involve either a single-step or a two-step growth process. However, these methods lack the flexibility to control the lateral width of the TMD domain as well as its composition. Here, we report a simple and yet scalable synthesis approach for the fabrication of lateral multi-junction heterostructures based on the combination of different TMD monolayers [MoX2-WX2 (X2 = S2, Se2 or SSe)]. Atomically sharp lateral junctions are sequentially synthesized from solid precursors by changing only the reactive gas environment in the presence of water vapor. This allows to selectively control the water-induced oxidation, volatilization and hence the relative amount of a specific metal oxide vapor, leading to the selective edge-epitaxial growth of either MoX2 or WX2. Spatially dependent photoluminescence and atomic-resolution images confirm the high crystallinity of the monolayers and the seamless lateral connectivity between the different TMD domains. These findings could be extended to other families of 2D materials, and creates the foundation towards the development of complex and atomically thin in-plane super-lattices, devices and integrated circuits.
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Submitted 21 June, 2017;
originally announced June 2017.
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Electronic in-plane symmetry breaking at field-tuned quantum criticality in CeRhIn5
Authors:
F. Ronning,
T. Helm,
K. Shirer,
M. Bachmann,
L. Balicas,
M. Chan,
B. J. Ramshaw,
R. D. McDonald,
F. F. Balakirev,
M. Jaime,
E. D. Bauer,
P. J. W. Moll
Abstract:
Electronic nematics are exotic states of matter where electronic interactions break a rotational symmetry of the underlying lattice, in analogy to the directional alignment without translational order in nematic liquid crystals. Intriguingly such phases appear in the copper- and iron-based superconductors, and their role in establishing high-temperature superconductivity remains an open question.…
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Electronic nematics are exotic states of matter where electronic interactions break a rotational symmetry of the underlying lattice, in analogy to the directional alignment without translational order in nematic liquid crystals. Intriguingly such phases appear in the copper- and iron-based superconductors, and their role in establishing high-temperature superconductivity remains an open question. Nematicity may take an active part, cooperating or competing with superconductivity, or may appear accidentally in such systems. Here we present experimental evidence for a phase of nematic character in the heavy fermion superconductor CeRhIn5. We observe a field-induced breaking of the electronic tetragonal symmetry of in the vicinity of an antiferromagnetic (AFM) quantum phase transition at Hc~50T. This phase appears in out-of-plane fields of H*~28T and is characterized by substantial in-plane resistivity anisotropy. The anisotropy can be aligned by a small in-plane field component, with no apparent connection to the underlying crystal structure. Furthermore no anomalies are observed in the magnetic torque, suggesting the absence of metamagnetic transitions in this field range. These observations are indicative of an electronic nematic character of the high field state in CeRhIn5. The appearance of nematic behavior in a phenotypical heavy fermion superconductor highlights the interrelation of nematicity and unconventional superconductivity, suggesting nematicity to be a commonality in such materials.
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Submitted 3 June, 2017;
originally announced June 2017.
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Planar Hall-effect, Anomalous planar Hall-effect, and Magnetic Field-Induced Phase Transitions in TaAs
Authors:
Q. R. Zhang,
B. Zeng,
Y. C. Chiu,
R. Schoenemann,
S. Memaran,
W. Zheng,
D. Rhodes,
K. -W. Chen,
T. Besara,
R. Sankar,
F. Chou,
G. T. McCandless,
J. Y. Chan,
N. Alidoust,
S. -Y. Xu,
I. Belopolski,
M. Z. Hasan,
F. F. Balakirev,
L. Balicas
Abstract:
We evaluate the topological character of TaAs through a detailed study of the angular, magnetic-field and temperature dependence of its magnetoresistivity and Hall-effect(s), and of its bulk electronic structure through quantum oscillatory phenomena. At low temperatures, and for fields perpendicular to the electrical current, we extract an extremely large Hall angle $Θ_H$ at higher fields, that is…
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We evaluate the topological character of TaAs through a detailed study of the angular, magnetic-field and temperature dependence of its magnetoresistivity and Hall-effect(s), and of its bulk electronic structure through quantum oscillatory phenomena. At low temperatures, and for fields perpendicular to the electrical current, we extract an extremely large Hall angle $Θ_H$ at higher fields, that is $Θ_H \sim 82.5^{\circ}$, implying a very pronounced Hall signal superimposed into its magnetoresistivity. For magnetic fields and electrical currents perpendicular to the \emph{c}-axis we observe a very pronounced planar Hall-effect, when the magnetic field is rotated within the basal plane. This effect is observed even at higher temperatures, i.e. as high as $T = 100$ K, and predicted recently to result from the chiral anomaly among Weyl points. Superimposed onto this planar Hall, which is an even function of the field, we observe an anomalous planar Hall-signal akin to the one reported for that is an odd function of the field. Below 100 K, negative longitudinal magnetoresistivity (LMR), initially ascribed to the chiral anomaly and subsequently to current inhomogeneities, is observed in samples having different geometries and contact configurations, once the large Hall signal is subtracted. Our measurements reveal a phase transition upon approaching the quantum limit that leads to the reconstruction of the FS and to the concomitant suppression of the negative LMR indicating that it is intrinsically associated with the Weyl dispersion at the Fermi level. For fields along the \emph{a}-axis it also leads to a pronounced hysteresis pointing to a field-induced electronic phase-transition. This collection of unconventional tranport observations points to the prominent role played by the axial anomaly among Weyl nodes.
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Submitted 26 November, 2018; v1 submitted 2 May, 2017;
originally announced May 2017.