Giant room-temperature nonlinearities from a monolayer Janus topological semiconductor
Authors:
Jiaojian Shi,
Haowei Xu,
Christian Heide,
Changan HuangFu,
Chenyi Xia,
Felipe de Quesada,
Hongzhi Shen,
Tianyi Zhang,
Leo Yu,
Amalya Johnson,
Fang Liu,
Enzheng Shi,
Liying Jiao,
Tony Heinz,
Shambhu Ghimire,
Ju Li,
Jing Kong,
Yunfan Guo,
Aaron M. Lindenberg
Abstract:
Nonlinear optical materials possess wide applications, ranging from terahertz and mid-infrared detection to energy harvesting. Recently, the correlations between nonlinear optical responses and topological properties, such as Berry curvature and the quantum metric tensor, have stimulated great interest. Here, we report giant room-temperature nonlinearities in an emergent non-centrosymmetric two-di…
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Nonlinear optical materials possess wide applications, ranging from terahertz and mid-infrared detection to energy harvesting. Recently, the correlations between nonlinear optical responses and topological properties, such as Berry curvature and the quantum metric tensor, have stimulated great interest. Here, we report giant room-temperature nonlinearities in an emergent non-centrosymmetric two-dimensional topological material, the Janus transition metal dichalcogenides in the 1T' phase, which are synthesized by an advanced atomic-layer substitution method. High harmonic generation, terahertz emission spectroscopy, and second harmonic generation measurements consistently reveal orders-of-the-magnitude enhancement in terahertz-frequency nonlinearities of 1T' MoSSe (e.g., > 50 times higher than 2H MoS$_2$ for 18th order harmonic generation; > 20 times higher than 2H MoS$_2$ for terahertz emission). It is elucidated that such colossal nonlinear optical responses come from topological band mixing and strong inversion symmetry breaking due to the Janus structure. Our work defines general protocols for designing materials with large nonlinearities and preludes the applications of topological materials in optoelectronics down to the monolayer limit. This two-dimensional form of topological materials also constitute a unique platform for examining origin of the anomalous high-harmonic generation, with potential applications as building blocks for scalable attosecond sources.
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Submitted 3 April, 2023;
originally announced April 2023.
Thickness and twist angle dependent interlayer excitons in metal monochalcogenide heterostructures
Authors:
Wenkai Zheng,
Li Xiang,
Felipe de Quesada,
Mathias Augustin,
Zhengguang Lu,
Matthew Wilson,
Aditya Sood,
Fengcheng Wu,
Dmitry Shcherbakov,
Shahriar Memaran,
Ryan E. Baumbach,
Gregory T. McCandless,
Julia Y. Chan,
Song Liu,
James Edgar,
Chun Ning Lau,
Chun Hung Lui,
Elton Santos,
Aaron Lindenberg,
Dmitry Smirnov,
Luis Balicas
Abstract:
Interlayer excitons, or bound electron-hole pairs whose constituent quasiparticles are located in distinct stacked semiconducting layers, are being intensively studied in heterobilayers of two dimensional semiconductors. They owe their existence to an intrinsic type-II band alignment between both layers that convert these into p-n junctions. Here, we unveil a pronounced interlayer exciton (IX) in…
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Interlayer excitons, or bound electron-hole pairs whose constituent quasiparticles are located in distinct stacked semiconducting layers, are being intensively studied in heterobilayers of two dimensional semiconductors. They owe their existence to an intrinsic type-II band alignment between both layers that convert these into p-n junctions. Here, we unveil a pronounced interlayer exciton (IX) in heterobilayers of metal monochalcogenides, namely gamma-InSe on epsilon-GaSe, whose pronounced emission is adjustable just by varying their thicknesses given their number of layers dependent direct bandgaps. Time-dependent photoluminescense spectroscopy unveils considerably longer interlayer exciton lifetimes with respect to intralayer ones, thus confirming their nature. The linear Stark effect yields a bound electron-hole pair whose separation d is just (3.6 \pm 0.1) Å with d being very close to dSe = 3.4 Å which is the calculated interfacial Se separation. The envelope of IX is twist angle dependent and describable by superimposed emissions that are nearly equally spaced in energy, as if quantized due to localization induced by the small moiré periodicity. These heterostacks are characterized by extremely flat interfacial valence bands making them prime candidates for the observation of magnetism or other correlated electronic phases upon carrier doping.
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Submitted 15 October, 2022;
originally announced October 2022.
