-
Pressure-induced optical anisotropy of HfS$_2$
Authors:
Igor Antoniazzi,
Tomasz Woźniak,
Amit Pawbake,
Natalia Zawadzka,
Magdalena Grzeszczyk,
Zahir Muhammad,
Weisheng Zhao,
Jordi Ibáñez,
Clement Faugeras,
Maciej R. Molas,
Adam Babiński
Abstract:
The effect of pressure on Raman scattering (RS) in the bulk HfS$_2$ is investigated under hydrostatic and non-hydrostatic conditions. The RS lineshape does not change significantly in the hydrostatic regime, showing a systematic blueshift of the spectral features. In a non-hydrostatic environment, seven peaks emerge in the spectrum ($P$=7 GPa) dominating the lineshape up to $P$=10.5 GPa. The chang…
▽ More
The effect of pressure on Raman scattering (RS) in the bulk HfS$_2$ is investigated under hydrostatic and non-hydrostatic conditions. The RS lineshape does not change significantly in the hydrostatic regime, showing a systematic blueshift of the spectral features. In a non-hydrostatic environment, seven peaks emerge in the spectrum ($P$=7 GPa) dominating the lineshape up to $P$=10.5 GPa. The change in the RS lineshape manifests a pressure-induced phase transition in HfS$_2$. The simultaneous observation of both low-pressure (LP) and high-pressure (HP) related RS peaks suggests the corresponding coexistence of two different phases over a large pressure range. We found that the HP-related phase is metastable, persisting during the decompression cycle down to $P$=1.2 GPa with the LP-related features finally recovering at even lower pressures. The angle-resolved polarized RS (ARPRS) performed under $P$=7.4 GPa revealed a strong in-plane anisotropy of both the LP-related A$_{1g}$ mode and the HP peaks. The anisotropy is related to the possible distortion of the structure induced by the non-hydrostatic component of the pressure. We describe the obtained results by the influence of the non-hydrostatic pressure on the observed phase transition. We interpret our results in terms of a distorted $Pnma$ phase as a possible HP induced structure of HfS$_2$.
△ Less
Submitted 29 February, 2024;
originally announced February 2024.
-
Discovery of a hybrid topological quantum state in an elemental solid
Authors:
Md Shafayat Hossain,
Frank Schindler,
Rajibul Islam,
Zahir Muhammad,
Yu-Xiao Jiang,
Zi-Jia Cheng,
Qi Zhang,
Tao Hou,
Hongyu Chen,
Maksim Litskevich,
Brian Casas,
Jia-Xin Yin,
Tyler A. Cochran,
Mohammad Yahyavi,
Xian P. Yang,
Luis Balicas,
Guoqing Chang,
Weisheng Zhao,
Titus Neupert,
M. Zahid Hasan
Abstract:
Topology and interactions are foundational concepts in the modern understanding of quantum matter. Their nexus yields three significant research directions: competition between distinct interactions, as in the multiple intertwined phases, interplay between interactions and topology that drives the phenomena in twisted layered materials and topological magnets, and the coalescence of multiple topol…
▽ More
Topology and interactions are foundational concepts in the modern understanding of quantum matter. Their nexus yields three significant research directions: competition between distinct interactions, as in the multiple intertwined phases, interplay between interactions and topology that drives the phenomena in twisted layered materials and topological magnets, and the coalescence of multiple topological orders to generate distinct novel phases. The first two examples have grown into major areas of research, while the last example remains mostly untouched, mainly because of the lack of a material platform for experimental studies. Here, using tunneling microscopy, photoemission spectroscopy, and theoretical analysis, we unveil a "hybrid" and yet novel topological phase of matter in the simple elemental solid arsenic. Through a unique bulk-surface-edge correspondence, we uncover that arsenic features a conjoined strong and higher-order topology, stabilizing a hybrid topological phase. While momentum-space spectroscopy measurements show signs of topological surface states, real-space microscopy measurements unravel a unique geometry of topology-induced step edge conduction channels revealed on various forms of natural nanostructures on the surface. Using theoretical models, we show that the existence of gapless step edge states in arsenic relies on the simultaneous presence of both a nontrivial strong Z2 invariant and a nontrivial higher-order topological invariant, providing experimental evidence for hybrid topology and its realization in a single crystal. Our discovery highlights pathways to explore the interplay of different kinds of band topology and harness the associated topological conduction channels in future engineered quantum or nano-devices.
△ Less
Submitted 9 January, 2024;
originally announced January 2024.
-
3D Topological Semimetal Phases of Strained $α$-Sn on Insulating Substrate
Authors:
Jakub Polaczyński,
Gauthier Krizman,
Alexandr Kazakov,
Bartłomiej Turowski,
Joaquín Bermejo Ortiz,
Rafał Rudniewski,
Tomasz Wojciechowski,
Piotr Dłużewski,
Marta Aleszkiewicz,
Wojciech Zaleszczyk,
Bogusława Kurowska,
Zahir Muhammad,
Marcin Rosmus,
Natalia Olszowska,
Louis-Anne De Vaulchier,
Yves Guldner,
Tomasz Wojtowicz,
Valentine V. Volobuev
Abstract:
$α$-Sn is an elemental topological material, whose topological phases can be tuned by strain and magnetic field. Such tunability offers a substantial potential for topological electronics. However, InSb substrates, commonly used to stabilize $α…
▽ More
$α$-Sn is an elemental topological material, whose topological phases can be tuned by strain and magnetic field. Such tunability offers a substantial potential for topological electronics. However, InSb substrates, commonly used to stabilize $α$-Sn allotrope, suffer from parallel conduction, restricting transport investigations and potential applications. Here, the successful MBE growth of high-quality $α$-Sn layers on insulating, hybrid CdTe/GaAs(001) substrates, with bulk electron mobility approaching 20000 cm$^2$V$^{-1}$s$^{-1}$ is reported. The electronic properties of the samples are systematically investigated by independent complementary techniques, enabling thorough characterization of the 3D Dirac (DSM) and Weyl (WSM) semimetal phases induced by the strains and magnetic field, respectively. Magneto-optical experiments, corroborated with band structure modeling, provide an exhaustive description of the bulk states in the DSM phase. The modeled electronic structure is directly observed in angle-resolved photoemission spectroscopy, which reveals linearly dispersing bands near the Fermi level. The first detailed study of negative longitudinal magnetoresistance relates this effect to the chiral anomaly and, consequently, to the presence of WSM. Observation of the $π$ Berry phase in Shubnikov-de Haas oscillations agrees with the topologically non-trivial nature of the investigated samples. Our findings establish $α$-Sn as an attractive topological material for exploring relativistic physics and future applications.
△ Less
Submitted 13 June, 2024; v1 submitted 7 September, 2023;
originally announced September 2023.
-
The effect of temperature and excitation energy on Raman scattering in bulk HfS$_2$
Authors:
Igor Antoniazzi,
Natalia Zawadzka,
Magdalena Grzeszczyk,
Tomasz Woźniak,
Jordi Ibáñez,
Zahir Muhammad,
Weisheng Zhao,
Maciej R. Molas,
Adam Babiński
Abstract:
Raman scattering (RS) in bulk hafnium disulfide (HfS$_2$) is investigated as a function of temperature (5 K $-$ 350 K) with polarization resolution and excitation of several laser energies. An unexpected temperature dependence of the energies of the main Raman-active (A$_{\textrm{1g}}$ and E$_{\textrm{g}}$) modes with the temperature-induced blueshift in the low-temperature limit is observed. The…
▽ More
Raman scattering (RS) in bulk hafnium disulfide (HfS$_2$) is investigated as a function of temperature (5 K $-$ 350 K) with polarization resolution and excitation of several laser energies. An unexpected temperature dependence of the energies of the main Raman-active (A$_{\textrm{1g}}$ and E$_{\textrm{g}}$) modes with the temperature-induced blueshift in the low-temperature limit is observed. The low-temperature quenching of a mode $ω_1$ (134 cm$^{-1}$) and the emergence of a new mode at approx. 184 cm$^{-1}$, labeled Z, is reported. The optical anisotropy of the RS in HfS$_2$ is also reported, which is highly susceptible to the excitation energy. The apparent quenching of the A$_{\textrm{1g}}$ mode at $T$=5 K and of the E$_{\textrm{g}}$ mode at $T$=300 K in the RS spectrum excited with 3.06~eV excitation is also observed. We discuss the results in the context of possible resonant character of light-phonon interactions. Analyzed is also a possible effect of the iodine molecules intercalated in the van der Waals gaps between neighboring HfS$_2$ layers, which inevitably result from the growth procedure.
△ Less
Submitted 12 December, 2022;
originally announced December 2022.
-
Fast electrically switchable large gap quantum spin Hall states in MGe$_2$Z$_4$
Authors:
Rajibul Islam,
Ghulam Hussain,
Rahul Verma,
Mohammad Sadegh Talezadehlari,
Zahir Muhammad,
Bahadur Singh,
Carmine Autieri
Abstract:
Spin-polarized conducting edge currents counterpropagate in quantum spin Hall (QSH) insulators and are protected against disorder-driven localizations by the time-reversal symmetry. Using these spin-currents for device applications require materials having large band gap and fast switchable QSH states. By means of in-depth first-principles calculations, we demonstrate the large band gap and fast s…
▽ More
Spin-polarized conducting edge currents counterpropagate in quantum spin Hall (QSH) insulators and are protected against disorder-driven localizations by the time-reversal symmetry. Using these spin-currents for device applications require materials having large band gap and fast switchable QSH states. By means of in-depth first-principles calculations, we demonstrate the large band gap and fast switchable QSH state in a newly introduced two-dimensional (2D) material family with 1T$^\prime$-MGe$_2$Z$_4$ (M = Mo or W and Z = P or As). The thermodynamically stable 1T$^\prime$-MoGe$_2$Z$_4$ monolayers have a large energy gap around $\sim$237 meV. These materials undergo a phase transition from a QSH insulator to a trivial insulator with a Rashba-like spin splitting under the influence of an out-of-plane electric field, demonstrating the tunability of the band gap and its band topology. Fast topological phase switching in a large gap 1T$^\prime$-MoGe$_2$Z$_4$ QSH insulators has potential applications in low-power devices, quantum computation, and quantum communication.
△ Less
Submitted 13 April, 2023; v1 submitted 11 November, 2022;
originally announced November 2022.
-
Excitonic luminescence of iodine-intercalated HfS$_2$
Authors:
N. Zawadzka,
T. Woźniak,
M. Strawski,
I. Antoniazzi,
M. Grzeszczyk,
K. Olkowska-Pucko,
Z. Muhammad,
J. Ibanez,
W. Zhao,
J. Jadczak,
R. Stępniewski,
A. Babiński,
M. R. Molas
Abstract:
Photoluminescence from bulk HfS$_2$ grown by the chemical vapor transport method is reported. A series of emission lines is apparent at low temperature in the energy range of 1.4 - 1.5 eV. Two groups of the observed excitonic transitions followed by their replicas involving acoustic and optical phonons are distinguished using classical intensity correlation analysis. The emission is attributed to…
▽ More
Photoluminescence from bulk HfS$_2$ grown by the chemical vapor transport method is reported. A series of emission lines is apparent at low temperature in the energy range of 1.4 - 1.5 eV. Two groups of the observed excitonic transitions followed by their replicas involving acoustic and optical phonons are distinguished using classical intensity correlation analysis. The emission is attributed to the recombination of excitons bound to iodine (I$_2$) molecules intercalated between layers of HfS$_2$. The I$_2$ molecules are introduced to the crystal during the growth as halogen transport agents in the growth process. Their presence in the crystal is confirmed by secondary ion mass spectroscopy.
△ Less
Submitted 16 January, 2023; v1 submitted 18 September, 2022;
originally announced September 2022.
-
Switchable large-gap quantum spin Hall state in two-dimensional MSi$_2$Z$_4$ materials class
Authors:
Rajibul Islam,
Rahul Verma,
Barun Ghosh,
Zahir Muhammad,
Arun Bansil,
Carmine Autieri,
Bahadur Singh
Abstract:
Quantum spin Hall (QSH) insulators exhibit spin-polarized conducting edge states that are topologically protected from backscattering and offer unique opportunities for addressing fundamental science questions and device applications. Finding viable materials that host such topological states, however, remains a challenge. Here by using in-depth first-principles theoretical modeling, we predict la…
▽ More
Quantum spin Hall (QSH) insulators exhibit spin-polarized conducting edge states that are topologically protected from backscattering and offer unique opportunities for addressing fundamental science questions and device applications. Finding viable materials that host such topological states, however, remains a challenge. Here by using in-depth first-principles theoretical modeling, we predict large bandgap QSH insulators in recently bottom-up synthesized two-dimensional (2D) MSi$_2$Z$_4$ (M = Mo or W and Z = P or As) materials family with $1T^\prime$ structure. A structural distortion in the $2H$ phase drives a band inversion between the metal (Mo/W) $d$ and $p$ states of P/As to realize spinless Dirac cone states without spin-orbit coupling. When spin-orbit coupling is included, a hybridization gap as large as $\sim 204$ meV opens up at the band crossing points, realizing spin-polarized conducting edge states with nearly quantized spin Hall conductivity. We also show that the inverted band gap is tunable with a vertical electric field which drives a topological phase transition from the QSH to a trivial insulator with Rashba-like edge states. Our study identifies 2D MSi$_2$Z$_4$ materials family with $1T^\prime$ structure as large bandgap, tunable QSH insulators with protected spin-polarized edge states and large spin-Hall conductivity.
△ Less
Submitted 18 July, 2022;
originally announced July 2022.
-
Pressure-driven phase transitions in bulk HfS$_2$
Authors:
M. Grzeszczyk,
J. Gawraczyński,
T. Woźniak,
J. Ibáñez,
Z. Muhammad,
W. Zhao,
M. R. Molas,
A. Babiński
Abstract:
The effect of hydrostatic pressure up to 27 GPa on the Raman scattering (RS) in bulk HfS$_2$ is investigated. There are two transformations of RS spectra, which take place during compression at pressure between 5.7 GPa and 9.8 GPa as well as between 12.8 GPa and 15.2 GPa. Seven vibrational modes can be observed after the transformation, as compared to four modes before the transformation. The obse…
▽ More
The effect of hydrostatic pressure up to 27 GPa on the Raman scattering (RS) in bulk HfS$_2$ is investigated. There are two transformations of RS spectra, which take place during compression at pressure between 5.7 GPa and 9.8 GPa as well as between 12.8 GPa and 15.2 GPa. Seven vibrational modes can be observed after the transformation, as compared to four modes before the transformation. The observed change suggests structural change in the material of yet unknown nature. The frequencies of the RS modes observed above the transformation change linearly with pressure and corresponding pressure coefficients have been determined. The other transition manifests itself as a change in the RS lineshape. While a series of well-defined RS modes are observed under pressure below the transition, broad spectral bands can be seen at higher pressure. The overall lineshape of the spectra resembles that of disordered materials. The lineshape does not change during decompression, which suggests permanent nature of the high-pressure transition.
△ Less
Submitted 21 October, 2021;
originally announced October 2021.
-
Extrinsic n-type semiconductor transition in ZrSe2 with the metallic character through hafnium substitution
Authors:
Zahir Muhammad,
Yuliang Li,
Sami Ullah,
Firoz Khan,
Saleh S Alarfaji,
Abdulaziz M. Alanazi,
Zhe Sun,
Thamraa Alshahrani,
Yue Zhang,
Weisheng Zhao
Abstract:
Two dimensional layered materials exhibit versatile electronic properties in their different phases. The intrinsic electronic properties of these materials can be modulated through doping or intercalation. In this study, we investigated the electronic properties of Hf doped ZrSe2 single crystals using angle-resolved photoemission spectroscopy (ARPES) combined with first principles density function…
▽ More
Two dimensional layered materials exhibit versatile electronic properties in their different phases. The intrinsic electronic properties of these materials can be modulated through doping or intercalation. In this study, we investigated the electronic properties of Hf doped ZrSe2 single crystals using angle-resolved photoemission spectroscopy (ARPES) combined with first principles density functional theory (DFT) calculations. It is observed that the valence band maxima of ZrSe2, located below the Fermi level, undergo a significant change with the introduction of Hf substitution. Hf can introduce extra charges into the conduction band, rather than making a mixed structure of HfSe2 and ZrSe2 band structure, which can cross the Fermi level. Compared to the semiconducting band structure of ZrSe2, we observed that the conduction band crosses the Fermi level at the high symmetry M point in Hf-doped ZrSe2. This suggests an increase of electron type carriers around the Fermi level, resulting in an extrinsic charge carrier density in the conduction band, which can form a metallic behaviour. It can be noticed that the Hf cations can create disorder in the form of excess atoms of Zr, which yields more carriers in the conduction band in the shape of smeared bands. The tails of the smeared band occupied the d-orbitals extended into the Fermi level and left the d band below. Similarly, the electrical resistance measurements further confirm the metallic-like character of Hf doped ZrSe2 compared to the semiconductor ZrSe2, indicating increased carriers. This metallic like behavior is suggested to be predisposed by the extrinsic electrons induced by the substitutional disorder. This study further demonstrates the possibility of band gap engineering through heavy metal doping in 2D materials.
△ Less
Submitted 25 January, 2024; v1 submitted 1 December, 2018;
originally announced December 2018.
-
Electron-Doping Induced Semiconductor to Metal Transitions in ZrSe2 Layers via Copper Atomic Intercalation
Authors:
Zahir Muhammad,
Kejun Mu,
Haifeng Lv,
Chuanqiang Wu,
Zia ur Rehman,
Muhammad Habib,
Zhe Sun,
Xiaojun Wu,
Li Song
Abstract:
Atomic intercalation in two dimensional (2D) layered materials can engineer the electronic structure at the atomic scale, bringing out tunable physical and chemical properties which are quite distinct in comparison with pristine one. Among them, electron-doped engineering induced by intercalation is an efficient route to modulate electronic states in 2D layers. Herein, we demonstrate a semiconduct…
▽ More
Atomic intercalation in two dimensional (2D) layered materials can engineer the electronic structure at the atomic scale, bringing out tunable physical and chemical properties which are quite distinct in comparison with pristine one. Among them, electron-doped engineering induced by intercalation is an efficient route to modulate electronic states in 2D layers. Herein, we demonstrate a semiconducting to the metallic phase transition in zirconium diselenide (ZrSe2) single crystal via controllable incorporation of copper (Cu) atoms. Combined with first-principles density functional theory (DFT) calculations, our angle resolved photoemission spectroscopy (ARPES) characterizations clearly revealed the emergence of conduction band dispersion at M/L point of Brillouin zone due to Cu-induced electron doping in ZrSe2 interlayers. Moreover, the field-effect transistor (FET) fabricated on ZrSe2 displayed a n-type semiconducting transport behavior, while the Cu-intercalated ZrSe2 posed linear Ids vs Vds curves with metallic character shows n-type doping. The atomic intercalation approach has high potential for realizing transparent electron-doping systems for many specific 2D-based nano-electronics.
△ Less
Submitted 22 March, 2018;
originally announced March 2018.
-
Cross-layer Chase Combining with Selective Retransmission, Analysis and Throughput Optimization for OFDM Systems
Authors:
Taniya Shafique,
Zia Muhammad,
Huy-Dung Han
Abstract:
In this paper, we present bandwidth efficient retransmission method employong selective retransmission approach at modulation layer under orthogonal frequency division multiplexing (OFDM) signaling. Our proposed cross-layer design embeds a selective retransmission sublayer in physical layer (PHY) that targets retransmission of information symbols transmitted over poor quality OFDM sub-carriers. Mo…
▽ More
In this paper, we present bandwidth efficient retransmission method employong selective retransmission approach at modulation layer under orthogonal frequency division multiplexing (OFDM) signaling. Our proposed cross-layer design embeds a selective retransmission sublayer in physical layer (PHY) that targets retransmission of information symbols transmitted over poor quality OFDM sub-carriers. Most of the times, few errors in decoded bit stream result in packet failure at medium access control (MAC) layer. The unnecessary retransmission of good quality information symbols of a failed packet has detrimental effect on overall throughput of transceiver. We propose a cross-layer Chase combining with selective retransmission (CCSR) method by blending Chase combining at MAC layer and selective retransmission in PHY. The selective retransmission in PHY targets the poor quality information symbols prior to decoding, which results into lower hybrid automatic repeat reQuest (HARQ) retransmissions at MAC layer. We also present tight bit-error rate (BER) upper bound and tight throughput lower bound for CCSR method. In order to maximize throughput of the proposed method, we formulate optimization problem with respect to the amount of information to be retransmitted in selective retransmission. The simulation results demonstrate significant throughput gain of the proposed CCSR method as compared to conventional Chase combining method.
△ Less
Submitted 25 November, 2015;
originally announced November 2015.
-
Intersections of quotient rings and Pruefer v-multiplication domains
Authors:
El Baghdadi Said,
Fontana Marco,
Zafrullah Muhammad
Abstract:
Let $D$ be an integral domain with quotient field $K$. Call an overring $S$ of $D$ a subring of $K$ containing $D$ as a subring. A family $\{S_λ\midλ\in Λ\}$ of overrings of $D$ is called a defining family of $D$, if $D = \bigcap\{S_λ\midλ\in Λ\}$. Call an overring $S$ a sublocalization of $D$, if $S$ has a defining family consisting of rings of fractions of $D$. Sublocalizations and their interse…
▽ More
Let $D$ be an integral domain with quotient field $K$. Call an overring $S$ of $D$ a subring of $K$ containing $D$ as a subring. A family $\{S_λ\midλ\in Λ\}$ of overrings of $D$ is called a defining family of $D$, if $D = \bigcap\{S_λ\midλ\in Λ\}$. Call an overring $S$ a sublocalization of $D$, if $S$ has a defining family consisting of rings of fractions of $D$. Sublocalizations and their intersections exhibit interesting examples of semistar or star operations. We show as a consequence of our work that domains that are locally finite intersections of Prüfer $v$-multiplication (respectively, Mori) sublocalizations turn out to be Prüfer $v$-multiplication domains (respectively, Mori); in particular, for the Mori domain case, we reobtain a special case of \cite[Théorème 1]{Q} and \cite[Proposition 3.2]{de}. We also show that, more than the finite character of the defining family, it is the finite character of the star operation induced by the defining family that causes the interesting results. As a particular case of this theory, we provide a purely algebraic approach for characterizing Prüfer $v$-multiplication domains as a subclass of the class of essential domains (see also \cite[Theorem 2.4]{FT}).
△ Less
Submitted 19 September, 2015;
originally announced September 2015.
