Showing 1–14 of 14 results for author: Rooney, A P

Large magnetoelectric coupling in multiferroic oxide heterostructures assembled via epitaxial lift-off

Authors: David Pesquera, Ekaterina Khestanova, Massimo Ghidini, Sen Zhang, Aidan P. Rooney, Francesco Maccherozzi, Patricia Riego, Saeedeh Farokhipoor, Jiyeob Kim, Xavier Moya, Mary E. Vickers, Nadia A. Stelmashenko, Sarah J. Haigh, Sarnjeet S. Dhesi, Neil D. Mathur

Abstract: The strain dependent functional properties of epitaxial transition metal oxide films can be significantly modified via substrate selection. However, large lattice mismatches preclude dislocation-free epitaxial growth on ferroelectric substrates, whose strain states are modified by applied electric fields. Here we overcome this mismatch problem by depositing an epitaxial film of ferromagnetic La0.7… ▽ More The strain dependent functional properties of epitaxial transition metal oxide films can be significantly modified via substrate selection. However, large lattice mismatches preclude dislocation-free epitaxial growth on ferroelectric substrates, whose strain states are modified by applied electric fields. Here we overcome this mismatch problem by depositing an epitaxial film of ferromagnetic La0.7Sr0.3MnO3 on a single crystal substrate of well lattice matched SrTiO3 via a film of SrRuO3 that we subsequently dissolved, permitting the transfer of unstrained La0.7Sr0.3MnO3 to a ferroelectric substrate of 0.68Pb(Mg1/3Nb2/3)O3 0.32PbTiO3 in a different crystallographic orientation. Ferroelectric domain switching, and a concomitant ferroelectric phase transition, produced large non volatile changes of magnetization that were mediated by magnetic domain rotations at locations defined by the microstructure - as revealed via high resolution vector maps of magnetization constructed from photoemission electron microscopy data, with contrast from x-ray magnetic circular dichroism. In future, our method may be exploited to control functional properties in dislocation free epitaxial films of any composition. △ Less

Submitted 2 June, 2020; v1 submitted 29 May, 2020; originally announced June 2020.

Journal ref: Nat Commun 11, 3190 (2020)

Electrically pumped WSe$_2$-based light-emitting van der Waals heterostructures embedded in monolithic dielectric microcavities

Authors: O. Del Pozo-Zamudio, A. Genco, S. Schwarz, F. Withers, P. M. Walker, T. Godde, R. C. Schofield, A. P. Rooney, E. Prestat, K. Watanabe, T. Taniguchi, C. Clark, S. J. Haigh, D. N. Krizhanovskii, K. S. Novoselov, A. I. Tartakovskii

Abstract: Vertical stacking of atomically thin layered materials opens new possibilities for the fabrication of heterostructures with favorable optoelectronic properties. The combination of graphene, hexagonal boron nitride and semiconducting transition metal dichalcogenides allows fabrication of electroluminescence (EL) devices, compatible with a wide range of substrates. Here, we demonstrate a full integr… ▽ More Vertical stacking of atomically thin layered materials opens new possibilities for the fabrication of heterostructures with favorable optoelectronic properties. The combination of graphene, hexagonal boron nitride and semiconducting transition metal dichalcogenides allows fabrication of electroluminescence (EL) devices, compatible with a wide range of substrates. Here, we demonstrate a full integration of an electroluminescent van der Waals heterostructure in a monolithic optical microcavity made of two high reflectivity dielectric distributed Bragg reflectors (DBRs). Owing to the presence of graphene and hexagonal boron nitride protecting the WSe$_2$ during the top mirror deposition, we fully preserve the optoelectronic behaviour of the device. Two bright cavity modes appear in the EL spectrum featuring Q-factors of 250 and 580 respectively: the first is attributed directly to the monolayer area, while the second is ascribed to the portion of emission guided outside the WSe$_2$ island. By embedding the EL device inside the microcavity structure, a significant modification of the directionality of the emitted light is achieved, with the peak intensity increasing by nearly two orders of magnitude at the angle of the maximum emission compared with the same EL device without the top DBR. Furthermore, the coupling of the WSe$_2$ EL to the cavity mode with a dispersion allows a tuning of the peak emission wavelength exceeding 35 nm (80 meV) by varying the angle at which the EL is observed from the microcavity. This work provides a route for the development of compact vertical-cavity surface-emitting devices based on van der Waals heterostructures. △ Less

Submitted 4 June, 2020; v1 submitted 15 November, 2019; originally announced November 2019.

Journal ref: O. Del Pozo-Zamudio et al. 2D materials 7 (2020) 3, 031006

Indirect to direct gap crossover in two-dimensional InSe revealed by ARPES

Authors: Matthew Hamer, Johanna Zultak, Anastasia V. Tyurnina, Viktor Zólyomi, Daniel Terry, Alexei Barinov, Alistair Garner, Jack Donoghue, Aidan P. Rooney, Viktor Kandyba, Alessio Giampietri, Abigail J. Graham, Natalie C. Teutsch, Xue Xia, Maciej Koperski, Sarah J. Haigh, Vladimir I. Fal'ko, Roman Gorbachev, Neil R. Wilson

Abstract: Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of their band gap as a function of the number of layers in the crystal [1-4] and, specifically for InSe, an earlier predicted crossover from a direct gap in the bulk [5,6] to a weakly indirect band gap in monolayers and bilaye… ▽ More Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of their band gap as a function of the number of layers in the crystal [1-4] and, specifically for InSe, an earlier predicted crossover from a direct gap in the bulk [5,6] to a weakly indirect band gap in monolayers and bilayers [7-11]. Here, we apply angle resolved photoemission spectroscopy with submicrometer spatial resolution ($μ$ARPES) to visualise the layer-dependent valence band structure of mechanically exfoliated crystals of InSe. We show that for 1 layer and 2 layer InSe the valence band maxima are away from the $\mathbfΓ$-point, forming an indirect gap, with the conduction band edge known to be at the $\mathbfΓ$-point. In contrast, for six or more layers the bandgap becomes direct, in good agreement with theoretical predictions. The high-quality monolayer and bilayer samples enables us to resolve, in the photoluminescence spectra, the band-edge exciton (A) from the exciton (B) involving holes in a pair of deeper valence bands, degenerate at $\mathbfΓ$, with the splitting that agrees with both $μ$ARPES data and the results of DFT modelling. Due to the difference in symmetry between these two valence bands, light emitted by the A-exciton should be predominantly polarised perpendicular to the plane of the two-dimensional crystal, which we have verified for few-layer InSe crystals. △ Less

Submitted 21 January, 2019; originally announced January 2019.

Journal ref: ACS Nano, 2019, 13, pp 2136-2142

Laser writable high-K dielectric for van der Waals nano-electronics

Authors: N. Peimyoo, M. D. Barnes, J. D. Mehew, A. De Sanctis, I. Amit, J. Escolar, K. Anastasiou, A. P. Rooney, S. J. Haigh, S. Russo, M. F. Craciun, F. Withers

Abstract: Like silicon-based semiconductor devices, van der Waals heterostructures will require integration with high-K oxides. This is needed to achieve suitable voltage scaling, improved performance as well as allowing for added functionalities. Unfortunately, commonly used high-k oxide deposition methods are not directly compatible with 2D materials. Here we demonstrate a method to embed a multi-function… ▽ More Like silicon-based semiconductor devices, van der Waals heterostructures will require integration with high-K oxides. This is needed to achieve suitable voltage scaling, improved performance as well as allowing for added functionalities. Unfortunately, commonly used high-k oxide deposition methods are not directly compatible with 2D materials. Here we demonstrate a method to embed a multi-functional few nm thick high-k oxide within van der Waals devices without degrading the properties of the neighbouring 2D materials. This is achieved by in-situ laser oxidation of embedded few layer HfS2 crystals. The resultant oxide is found to be in the amorphous phase with a dielectric constant of k~15 and break-down electric fields in the range of 0.5-0.6 V/nm. This transformation allows for the creation of a variety of fundamental nano-electronic and opto-electronic devices including, flexible Schottky barrier field effect transistors, dual gated graphene transistors as well as vertical light emitting and detecting tunnelling transistors. Furthermore, upon dielectric break-down, electrically conductive filaments are formed. This filamentation process can be used to electrically contact encapsulated conductive materials. Careful control of the filamentation process also allows for reversible switching between two resistance states. This allows for the creation of resistive switching random access memories (ReRAMs). We believe that this method of embedding a high-k oxide within complex van der Waals heterostructures could play an important role in future flexible multi-functional van der Waals devices. △ Less

Submitted 12 November, 2018; originally announced November 2018.

Comments: Accepted for publication in Science Advances

Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers

Authors: Pablo U. Asshoff, Jose L. Sambricio, Sergey Slizovskiy, Aidan P. Rooney, Takashi Taniguchi, Kenji Watanabe, Sarah J. Haigh, Vladimir Fal'ko, Irina V. Grigorieva, Ivan J. Vera-Marun

Abstract: Hexagonal boron nitride (hBN) is a prototypical high-quality two-dimensional insulator and an ideal material to study tunneling phenomena, as it can be easily integrated in vertical van der Waals devices. For spintronic devices, its potential has been demonstrated both for efficient spin injection in lateral spin valves and as a barrier in magnetic tunnel junctions (MTJs). Here we reveal the effec… ▽ More Hexagonal boron nitride (hBN) is a prototypical high-quality two-dimensional insulator and an ideal material to study tunneling phenomena, as it can be easily integrated in vertical van der Waals devices. For spintronic devices, its potential has been demonstrated both for efficient spin injection in lateral spin valves and as a barrier in magnetic tunnel junctions (MTJs). Here we reveal the effect of point defects inevitably present in mechanically exfoliated hBN on the tunnel magnetoresistance of Co-hBN-NiFe MTJs. We observe a clear enhancement of both the conductance and magnetoresistance of the junction at well-defined bias voltages, indicating resonant tunneling through magnetic (spin-polarized) defect states. The spin polarization of the defect states is attributed to exchange coupling of a paramagnetic impurity in the few-atomic-layer thick hBN to the ferromagnetic electrodes. This is confirmed by excellent agreement with theoretical modelling. Our findings should be taken into account in analyzing tunneling processes in hBN-based magnetic devices. More generally, our study shows the potential of using atomically thin hBN barriers with defects to engineer the magnetoresistance of MTJs and to achieve spin filtering, opening the door towards exploiting the spin degree of freedom in current studies of point defects as quantum emitters. △ Less

Submitted 3 October, 2018; originally announced October 2018.

Journal ref: Nano Lett., 2018

Anomalous twin boundaries in 2D materials

Authors: A. P. Rooney, Z. Li, W. Zhao, A. Gholinia, A. Kosikov, G. Auton, F. Ding, R. V. Gorbachev, R. J. Young, S. J Haigh

Abstract: The high mechanical strength and excellent flexibility of 2D materials such as graphene are some of their most important properties [1]. Good flexibility is key for exploiting 2D materials in many emerging technologies, such as wearable electronics, bioelectronics, protective coatings and composites [1] and recently bending has been suggested as a route to tune electronic transport behaviour [2].… ▽ More The high mechanical strength and excellent flexibility of 2D materials such as graphene are some of their most important properties [1]. Good flexibility is key for exploiting 2D materials in many emerging technologies, such as wearable electronics, bioelectronics, protective coatings and composites [1] and recently bending has been suggested as a route to tune electronic transport behaviour [2]. For virtually all crystalline materials macroscopic deformation is accommodated by the movement of dislocations and through the formation of twinning defects [3]; it is the geometry of the resulting microstructure that largely determines the mechanical and electronic properties. Despite this, the atomic microstructure of 2D materials after mechanical deformation has not been widely investigated: only by understanding these deformed microstructures can the resulting properties be accurately predicted and controlled. In this paper we describe the different structural features that can form as a result of bending in van der Waals (vdW) crystals of 2D materials. We show that twin boundaries, an important class of crystal defect, are delocalised by several nm and not atomically sharp as has been assumed for over half a century [4]. In addition, we demonstrate that different classes of microstructure are present in the deformed material and can be predicted from just the atomic structure, bend angle, and flake thickness. We anticipate that this new knowledge of the deformation structure for 2D materials will provide foundations for tailoring transport behaviour[2], mechanical properties, liquid-phase [5,6] and scotch-tape exfoliation [7,8], and crystal growth. △ Less

Submitted 1 September, 2018; originally announced September 2018.

Comments: 18 pages, 5 figures

Ballistic molecular transport through two-dimensional channels

Authors: A. Keerthi, A. K. Geim, A. Janardanan, A. P. Rooney, A. Esfandiar, S. Hu, S. A. Dar, I. V. Grigorieva, S. J. Haigh, F. C. Wang, B. Radha

Abstract: Gas permeation through nanoscale pores is ubiquitous in nature and plays an important role in a plethora of technologies. Because the pore size is typically smaller than the mean free path of gas molecules, their flow is conventionally described by the Knudsen theory that assumes diffuse reflection (random-angle scattering) at confining walls. This assumption has proven to hold surprisingly well i… ▽ More Gas permeation through nanoscale pores is ubiquitous in nature and plays an important role in a plethora of technologies. Because the pore size is typically smaller than the mean free path of gas molecules, their flow is conventionally described by the Knudsen theory that assumes diffuse reflection (random-angle scattering) at confining walls. This assumption has proven to hold surprisingly well in experiment, and only a few cases of partially specular (mirror-like) reflection are known. Here we report gas transport through angstrom-scale channels with atomically-flat walls and show that surface scattering can be both diffuse or specular, depending on fine details of the surface atomic landscape, and quantum effects contribute to the specularity at room temperature. The channels made from graphene or boron nitride allow a helium gas flow that is orders of magnitude faster than expected from the theory. This is explained by specular surface scattering, which leads to ballistic transport and frictionless gas flow. Similar channels but with molybdenum disulfide walls exhibit much slower permeation that remains well described by Knudsen diffusion. The difference is attributed to stronger atomic corrugations at MoS2 surfaces, which are similar in height to the size of transported atoms and their de Broglie wavelength. The importance of the latter, matter-wave contribution is corroborated by the observation of a reversed isotope effect in which the mass flow of hydrogen is notably higher than that of deuterium, in contrast to the relation expected for classical flows. Our results provide insights into atomistic details of molecular permeation, which so far could be accessed only in simulations, and show a possibility of studying gas transport under a controlled confinement comparable to the quantum-mechanical size of atoms. △ Less

Submitted 15 May, 2018; originally announced May 2018.

Journal ref: Nature 558,420-424 (2018)

Observing imperfection in atomic interfaces for van der Waals heterostructures

Authors: Aidan. P. Rooney, Aleksey Kozikov, Alexander N. Rudenko, Eric Prestat, Matthew J Hamer, Freddie Withers, Yang Cao, Kostya S. Novoselov, Mikhail I. Katsnelson, Roman Gorbachev, Sarah J. Haigh

Abstract: Vertically stacked van der Waals heterostructures are a lucrative platform for exploring the rich electronic and optoelectronic phenomena in two-dimensional materials. Their performance will be strongly affected by impurities and defects at the interfaces. Here we present the first systematic study of interfaces in van der Waals heterostructure using cross sectional scanning transmission electron… ▽ More Vertically stacked van der Waals heterostructures are a lucrative platform for exploring the rich electronic and optoelectronic phenomena in two-dimensional materials. Their performance will be strongly affected by impurities and defects at the interfaces. Here we present the first systematic study of interfaces in van der Waals heterostructure using cross sectional scanning transmission electron microscope (STEM) imaging. By measuring interlayer separations and comparing these to density functional theory (DFT) calculations we find that pristine interfaces exist between hBN and MoS2 or WS2 for stacks prepared by mechanical exfoliation in air. However, for two technologically important transition metal dichalcogenide (TMDC) systems, MoSe2 and WSe2, our measurement of interlayer separations provide the first evidence for impurity species being trapped at buried interfaces with hBN: interfaces which are flat at the nanometer length scale. While decreasing the thickness of encapsulated WSe2 from bulk to monolayer we see a systematic increase in the interlayer separation. We attribute these differences to the thinnest TMDC flakes being flexible and hence able to deform mechanically around a sparse population of protruding interfacial impurities. We show that the air sensitive two dimensional (2D) crystal NbSe2 can be fabricated into heterostructures with pristine interfaces by processing in an inert-gas environment. Finally we find that adopting glove-box transfer significantly improves the quality of interfaces for WSe2 compared to processing in air. △ Less

Submitted 25 July, 2017; originally announced July 2017.

Journal ref: Nano Lett 2017, 17 (9), pp 5222

Phase segregation facilitates exfoliation of franckeite crystals to a single unit cell thickness

Authors: Matěj Velický, Peter S. Toth, Alexander M. Rakowski, Aidan P. Rooney, Aleksey Kozikov, Artem Mishchenko, Colin R. Woods, Thanasis Georgiou, Sarah J. Haigh, Kostya S. Novoselov, Robert A. W. Dryfe

Abstract: Weak interlayer van der Waals interactions in bulk crystals facilitate their mechanical exfoliation to monolayer and few-layer two-dimensional (2D) materials, which exhibit striking physical phenomena absent in their bulk form. Here we study a 2D form of a mineral franckeite and show that phase segregation into discrete layers at the sub-nanometre scale facilitates its layered structure and basal… ▽ More Weak interlayer van der Waals interactions in bulk crystals facilitate their mechanical exfoliation to monolayer and few-layer two-dimensional (2D) materials, which exhibit striking physical phenomena absent in their bulk form. Here we study a 2D form of a mineral franckeite and show that phase segregation into discrete layers at the sub-nanometre scale facilitates its layered structure and basal cleavage. This behaviour is likely to be common in a wider family of complex crystals and could be exploited for a single-step synthesis of van der Waals heterostructures, as an alternative to stacking of 2D materials. Mechanical exfoliation allowed us to produce crystals down to a single unit cell thickness and rationalise its basal cleavage by atomic-resolution scanning transmission electron microscopy (STEM). We demonstrate p-type electrical conductivity and remarkable electrochemical properties in exfoliated crystals, which shows promise for energy storage applications. △ Less

Submitted 8 December, 2016; originally announced December 2016.

Comments: Main text: 19 pages, 5 figures; Supplementary Information: 19 pages, 10 figures

Journal ref: Nature Communications 8 (2017) 14410

Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene

Authors: P. U. Asshoff, J. L. Sambricio, A. P. Rooney, S. Slizovskiy, A. Mishchenko, A. M. Rakowski, E. W. Hill, A. K. Geim, S. J. Haigh, V. I. Fal'ko, I. J. Vera-Marun, I. V. Grigorieva

Abstract: Graphene is hailed as an ideal material for spintronics due to weak intrinsic spin-orbit interaction that facilitates lateral spin transport and tunability of its electronic properties, including a possibility to induce magnetism in graphene. Another promising application of graphene is related to its use as a spacer separating ferromagnetic metals (FMs) in vertical magnetoresistive devices, the m… ▽ More Graphene is hailed as an ideal material for spintronics due to weak intrinsic spin-orbit interaction that facilitates lateral spin transport and tunability of its electronic properties, including a possibility to induce magnetism in graphene. Another promising application of graphene is related to its use as a spacer separating ferromagnetic metals (FMs) in vertical magnetoresistive devices, the most prominent class of spintronic devices widely used as magnetic sensors. In particular, few-layer graphene was predicted to act as a perfect spin filter. Here we show that the role of graphene in such devices (at least in the absence of epitaxial alignment between graphene and the FMs) is different and determined by proximity-induced spin splitting and charge transfer with adjacent ferromagnetic metals, making graphene a weak FM electrode rather than a spin filter. To this end, we report observations of magnetoresistance (MR) in vertical Co-graphene-NiFe junctions with 1 to 4 graphene layers separating the ferromagnets, and demonstrate that the dependence of the MR sign on the number of layers and its inversion at relatively small bias voltages is consistent with spin transport between weakly doped and differently spin-polarized layers of graphene. The proposed interpretation is supported by the observation of an MR sign reversal in biased Co-graphene-hBN-NiFe devices and by comprehensive structural characterization. Our results suggest a new architecture for vertical devices with electrically controlled MR. △ Less

Submitted 16 June, 2017; v1 submitted 4 July, 2016; originally announced July 2016.

Comments: 12 pages, 6 figures, Supplementary Information (6 Supplementary Notes, 11 supplementary figures)

Journal ref: 2D Mater. 4, 031004 (2017)

Molecular transport through capillaries made with atomic-scale precision

Authors: B. Radha, A. Esfandiar, F. C. Wang, A. P. Rooney, K. Gopinadhan, A. Keerthi, A. Mishchenko, A. Janardanan, P. Blake, L. Fumagalli, M. Lozada-Hidalgo, S. Garaj, S. J. Haigh, I. V. Grigorieva, H. A. Wu, A. K. Geim

Abstract: Nanometre-scale pores and capillaries have long been studied because of their importance in many natural phenomena and their use in numerous applications. A more recent development is the ability to fabricate artificial capillaries with nanometre dimensions, which has enabled new research on molecular transport and led to the emergence of nanofluidics. But surface roughness in particular makes it… ▽ More Nanometre-scale pores and capillaries have long been studied because of their importance in many natural phenomena and their use in numerous applications. A more recent development is the ability to fabricate artificial capillaries with nanometre dimensions, which has enabled new research on molecular transport and led to the emergence of nanofluidics. But surface roughness in particular makes it challenging to produce capillaries with precisely controlled dimensions at this spatial scale. Here we report the fabrication of narrow and smooth capillaries through van der Waals assembly, with atomically flat sheets at the top and bottom separated by spacers made of two-dimensional crystals with a precisely controlled number of layers. We use graphene and its multilayers as archetypal two-dimensional materials to demonstrate this technology, which produces structures that can be viewed as if individual atomic planes had been removed from a bulk crystal to leave behind flat voids of a height chosen with atomic-scale precision. Water transport through the channels, ranging in height from one to several dozen atomic planes, is characterized by unexpectedly fast flow (up to 1 metre per second) that we attribute to high capillary pressures (about 1,000 bar) and large slip lengths. For channels that accommodate only a few layers of water, the flow exhibits a marked enhancement that we associate with an increased structural order in nanoconfined water. Our work opens up an avenue to making capillaries and cavities with sizes tunable to ångström precision, and with permeation properties further controlled through a wide choice of atomically flat materials available for channel walls. △ Less

Submitted 8 September, 2016; v1 submitted 29 June, 2016; originally announced June 2016.

Journal ref: Nature 538, 222-225 (2016)

WSe2 light-emitting tunneling transistors with enhanced brightness at room temperature

Authors: F. Withers, O. Del Pozo-Zamudio, S. Schwarz, S. Dufferwiel, P. M. Walker, T. Godde, A. P. Rooney, A. Gholinia, C. R. Woods, P. Blake, S. J. Haigh, K. Watanabe, T. Taniguchi, I. L. Aleiner, A. K. Geim, V. I. Falko, A. I. Tartakovskii, K. S. Novoselov

Abstract: Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for opto-electronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature ext… ▽ More Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for opto-electronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature external quantum efficiency (EQE) of 1%. However, the EQE of MoS2 and MoSe2-based LEQWs shows behavior common for many other materials: it decreases fast from cryogenic conditions to room temperature, undermining their practical applications. Here we compare MoSe2 and WSe2 LEQWs. We show that the EQE of WSe2 devices grows with temperature, with room temperature EQE reaching 5%, which is 250x more than the previous best performance of MoS2 and MoSe2 quantum wells in ambient conditions. We attribute such a different temperature dependences to the inverted sign of spin-orbit splitting of conduction band states in tungsten and molybdenum dichalcogenides, which makes the lowest-energy exciton in WSe2 dark. △ Less

Submitted 19 November, 2015; originally announced November 2015.

Light-emitting diodes by bandstructure engineering in van der Waals heterostructures

Authors: F. Withers, O. Del Pozo-Zamudio, A. Mishchenko, A. P. Rooney, A. Gholinia, K. Watanabe, T. Taniguchi, S. J. Haigh, A. K. Geim, A. I. Tartakovskii, K. S. Novoselov

Abstract: The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling diodes with negative differential resistance, tunnelling transistors5, photovoltaic devices, etc. Here we take the complexity and functionality of such van der Waal… ▽ More The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling diodes with negative differential resistance, tunnelling transistors5, photovoltaic devices, etc. Here we take the complexity and functionality of such van der Waals heterostructures to the next level by introducing quantum wells (QWs) engineered with one atomic plane precision. We describe light emitting diodes (LEDs) made by stacking up metallic graphene, insulating hexagonal boron nitride (hBN) and various semiconducting monolayers into complex but carefully designed sequences. Our first devices already exhibit extrinsic quantum efficiency of nearly 10% and the emission can be tuned over a wide range of frequencies by appropriately choosing and combining 2D semiconductors (monolayers of transition metal dichalcogenides). By preparing the heterostructures on elastic and transparent substrates, we show that they can also provide the basis for flexible and semi-transparent electronics. The range of functionalities for the demonstrated heterostructures is expected to grow further with increasing the number of available 2D crystals and improving their electronic quality. △ Less

Submitted 24 December, 2014; originally announced December 2014.

Journal ref: Nature Materials, 14, 301-306 (2015)

Heterostructures produced from nanosheet-based inks

Authors: F. Withers, H. Yang, L. Britnell, A. P Rooney, E. Lewis, A. Felten, C. R. Woods, V. Sanchez Romaguera, T. Georgiou, A. Eckmann, Y. J. Kim, S. G. Yeates, S. J. Haigh, A. K. Geim, K. S. Novoselov, C. Casiraghi

Abstract: The new paradigm of heterostructures based on two-dimensional (2D) atomic crystals has already led to the observation of exciting physical phenomena and creation of novel devices. The possibility of combining layers of different 2D materials in one stack allows unprecedented control over the electronic and optical properties of the resulting material. Still, the current method of mechanical transf… ▽ More The new paradigm of heterostructures based on two-dimensional (2D) atomic crystals has already led to the observation of exciting physical phenomena and creation of novel devices. The possibility of combining layers of different 2D materials in one stack allows unprecedented control over the electronic and optical properties of the resulting material. Still, the current method of mechanical transfer of individual 2D crystals, though allowing exceptional control over the quality of such structures and interfaces, is not scalable. Here we show that such heterostructures can be assembled from chemically exfoliated 2D crystals, allowing for low-cost and scalable methods to be used in the device fabrication. △ Less

Submitted 4 September, 2014; originally announced September 2014.

Journal ref: Nano Letters, 14, 3987 (2014)