Laser writable high-K dielectric for van der Waals nano-electronics
Authors:
N. Peimyoo,
M. D. Barnes,
J. D. Mehew,
A. De Sanctis,
I. Amit,
J. Escolar,
K. Anastasiou,
A. P. Rooney,
S. J. Haigh,
S. Russo,
M. F. Craciun,
F. Withers
Abstract:
Like silicon-based semiconductor devices, van der Waals heterostructures will require integration with high-K oxides. This is needed to achieve suitable voltage scaling, improved performance as well as allowing for added functionalities. Unfortunately, commonly used high-k oxide deposition methods are not directly compatible with 2D materials. Here we demonstrate a method to embed a multi-function…
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Like silicon-based semiconductor devices, van der Waals heterostructures will require integration with high-K oxides. This is needed to achieve suitable voltage scaling, improved performance as well as allowing for added functionalities. Unfortunately, commonly used high-k oxide deposition methods are not directly compatible with 2D materials. Here we demonstrate a method to embed a multi-functional few nm thick high-k oxide within van der Waals devices without degrading the properties of the neighbouring 2D materials. This is achieved by in-situ laser oxidation of embedded few layer HfS2 crystals. The resultant oxide is found to be in the amorphous phase with a dielectric constant of k~15 and break-down electric fields in the range of 0.5-0.6 V/nm. This transformation allows for the creation of a variety of fundamental nano-electronic and opto-electronic devices including, flexible Schottky barrier field effect transistors, dual gated graphene transistors as well as vertical light emitting and detecting tunnelling transistors. Furthermore, upon dielectric break-down, electrically conductive filaments are formed. This filamentation process can be used to electrically contact encapsulated conductive materials. Careful control of the filamentation process also allows for reversible switching between two resistance states. This allows for the creation of resistive switching random access memories (ReRAMs). We believe that this method of embedding a high-k oxide within complex van der Waals heterostructures could play an important role in future flexible multi-functional van der Waals devices.
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Submitted 12 November, 2018;
originally announced November 2018.
High quality monolayer graphene synthesized by resistive heating cold wall chemical vapour deposition
Authors:
Thomas H. Bointon,
Matthew D. Barnes,
Saverio Russo,
Monica F. Craciun
Abstract:
Emerging flexible and wearable technologies such as healthcare electronics and energy-harvest devices could be transformed by the unique properties of graphene. The vision for a graphene-driven industrial revolution is motivating intensive research on the synthesis of (1) high quality and (2) low cost graphene. Hot-wall chemical vapour deposition (CVD) is one of the most competitive growth methods…
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Emerging flexible and wearable technologies such as healthcare electronics and energy-harvest devices could be transformed by the unique properties of graphene. The vision for a graphene-driven industrial revolution is motivating intensive research on the synthesis of (1) high quality and (2) low cost graphene. Hot-wall chemical vapour deposition (CVD) is one of the most competitive growth methods, but its long processing times are incompatible with production lines. Here we demonstrate the growth of high quality monolayer graphene using a technique that is 100 times faster than standard hot-wall CVD, resulting in 99% reduction in production costs. A thorough complementary study of Raman spectroscopy, atomic force microscopy, scanning electron microscopy and electrical magneto-transport measurements shows that our cold wall CVD-grown graphene is of comparable quality to that of natural graphene. Finally, we demonstrate the first transparent and flexible graphene capacitive touch-sensor that could enable the development of artificial skin for robots.
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Submitted 29 June, 2015;
originally announced June 2015.
