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Spectral asymmetry induces a re-entrant quantum Hall effect in a topological insulator
Authors:
Li-Xian Wang,
Wouter Beugeling,
Fabian Schmitt,
Lukas Lunczer,
Julian-Benedikt Mayer,
Hartmut Buhmann,
Ewelina M. Hankiewicz,
Laurens W. Molenkamp
Abstract:
The band inversion of topological materials in three spatial dimensions is intimately connected to the parity anomaly of two-dimensional massless Dirac fermions. At finite magnetic fields, the parity anomaly reveals itself as a non-zero spectral asymmetry, i.e., a non-zero difference between the number of conduction and valence band Landau levels, due to the unpaired zero Landau level. Here, we re…
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The band inversion of topological materials in three spatial dimensions is intimately connected to the parity anomaly of two-dimensional massless Dirac fermions. At finite magnetic fields, the parity anomaly reveals itself as a non-zero spectral asymmetry, i.e., a non-zero difference between the number of conduction and valence band Landau levels, due to the unpaired zero Landau level. Here, we realize this two-dimensional Dirac physics at a single surface of the three-dimensional topological insulator (Hg,Mn)Te. We observe an unconventional re-entrant quantum Hall effect that can be directly related to the occurrence of spectral asymmetry in a single topological surface state. The effect should be observable in any topological insulator where the transport is dominated by a single Dirac surface state.
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Submitted 8 February, 2024;
originally announced February 2024.
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Velocity and confinement of edge plasmons in HgTe-based 2D topological insulators
Authors:
Alexandre Gourmelon,
Elric Frigerio,
Hiroshi Kamata,
Lukas Lunczer,
Anne Denis,
Pascal Morfin,
Michael Rosticher,
Jean-Marc Berroir,
Gwendal Fève,
Bernard Plaçais,
Hartmut Buhmann,
Laurens W. Molenkamp,
Erwann Bocquillon
Abstract:
High-frequency transport in the edge states of the quantum spin Hall (QSH) effect has to date rarely been explored, though it could cast light on the scattering mechanisms taking place therein. We here report on the measurement of the plasmon velocity in topological HgTe quantum wells both in the QSH and quantum Hall (QH) regimes, using harmonic GHz excitations and phase-resolved detection. We obs…
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High-frequency transport in the edge states of the quantum spin Hall (QSH) effect has to date rarely been explored, though it could cast light on the scattering mechanisms taking place therein. We here report on the measurement of the plasmon velocity in topological HgTe quantum wells both in the QSH and quantum Hall (QH) regimes, using harmonic GHz excitations and phase-resolved detection. We observe low plasmon velocities corresponding to large transverse widths, which we ascribe to the prominent influence of charge puddles forming in the vicinity of edge channels. Together with other recent works, it suggests that puddles play an essential role in the edge state physics and probably constitute a main hurdle on the way to clean and robust edge transport.
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Submitted 22 February, 2023;
originally announced February 2023.
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Topological band inversion in HgTe(001): surface and bulk signatures from photoemission
Authors:
Raphael C. Vidal,
Giovanni Marini,
Lukas Lunczer,
Simon Moser,
Lena Fürst,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Charles Gould,
Hartmut Buhmann,
Wouter Beugeling,
Giorgio Sangiovanni,
Domenico Di Sante,
Gianni Profeta,
Laurens W. Molenkamp,
Hendrik Bentmann,
Friedrich Reinert
Abstract:
HgTe is a versatile topological material and has enabled the realization of a variety of topological states, including two- and three-dimensional (3D) topological insulators and topological semimetals. Nevertheless, a quantitative understanding of its electronic structure remains challenging, in particular due to coupling of the Te 5p-derived valence electrons to Hg 5d core states at shallow bindi…
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HgTe is a versatile topological material and has enabled the realization of a variety of topological states, including two- and three-dimensional (3D) topological insulators and topological semimetals. Nevertheless, a quantitative understanding of its electronic structure remains challenging, in particular due to coupling of the Te 5p-derived valence electrons to Hg 5d core states at shallow binding energy. We present a joint experimental and theoretical study of the electronic structure in strained HgTe(001) films in the 3D topological-insulator regime, based on angle-resolved photoelectron spectroscopy and density functional theory. The results establish detailed agreement in terms of (i) electronic band dispersions and orbital symmetries, (ii) surface and bulk contributions to the electronic structure, and (iii) the importance of Hg 5d states in the valence-band formation. Supported by theory, our experiments directly image the paradigmatic band inversion in HgTe, underlying its non-trivial band topology.
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Submitted 11 December, 2022;
originally announced December 2022.
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Finite field transport response of a dilute magnetic topological insulator based Josephson junction
Authors:
Pankaj Mandal,
Nicolai Taufertshöfer,
Lukas Lunczer,
Martin P. Stehno,
Charles Gould,
Laurens W. Molenkamp
Abstract:
Hybrid samples combining superconductors with magnetic topological insulators are a promising platform for exploring exotic new transport physics. We examine a Josephson junction of such a system, based on the dilute magnetic topological insulator (Hg,Mn)Te and the type II superconductor MoRe. In the zero and very low field limit, to the best of our knowledge, the device shows, for the first time,…
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Hybrid samples combining superconductors with magnetic topological insulators are a promising platform for exploring exotic new transport physics. We examine a Josephson junction of such a system, based on the dilute magnetic topological insulator (Hg,Mn)Te and the type II superconductor MoRe. In the zero and very low field limit, to the best of our knowledge, the device shows, for the first time, induced supercurrent through a magnetically doped semiconductor, in this case a topological insulator. At higher fields, a rich and hysteretic magnetoresistance is revealed. Careful analysis shows that the explanation of this behaviour can be found in magnetic flux focusing stemming from the Meissner effect in the superconductor, without invoking any role of proximity induced superconductivity. The phenomena is important, as it will ubiquitously co-exist with any exotic new physics that may be present in this class of devices.
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Submitted 26 April, 2022;
originally announced April 2022.
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Counterpropagating topological and quantum Hall edge channels
Authors:
Saquib Shamim,
Pragya Shekhar,
Wouter Beugeling,
Jan Böttcher,
Andreas Budewitz,
Julian-Benedikt Mayer,
Lukas Lunczer,
Ewelina M. Hankiewicz,
Hartmut Buhmann,
Laurens W. Molenkamp
Abstract:
The survival of the quantum spin Hall edge channels in presence of an external magnetic field has been a subject of experimental and theoretical research. The inversion of Landau levels that accommodates the quantum spin Hall effect is destroyed at a critical magnetic field, and a trivial insulating gap appears in the spectrum for stronger fields. In this work, we report the absence of this transp…
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The survival of the quantum spin Hall edge channels in presence of an external magnetic field has been a subject of experimental and theoretical research. The inversion of Landau levels that accommodates the quantum spin Hall effect is destroyed at a critical magnetic field, and a trivial insulating gap appears in the spectrum for stronger fields. In this work, we report the absence of this transport gap in disordered two dimensional topological insulators in perpendicular magnetic fields of up to 16 T. Instead, we observe that a topological edge channel (from band inversion) coexists with a counterpropagating quantum Hall edge channel for magnetic fields at which the transition to the insulating regime is expected. For larger fields, we observe only the quantum Hall edge channel with transverse resistance close to $h/e^2$. By tuning the disorder using different fabrication processes, we find evidence that this unexpected $ν=1$ plateau originates from extended quantum Hall edge channels along a continuous network of charge puddles at the edges of the device.
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Submitted 13 May, 2022; v1 submitted 11 March, 2022;
originally announced March 2022.
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Emergent quantum Hall effects below $50$ mT in a two-dimensional topological insulator
Authors:
Saquib Shamim,
Wouter Beugeling,
Jan Böttcher,
Pragya Shekhar,
Andreas Budewitz,
Philipp Leubner,
Lukas Lunczer,
Ewelina M. Hankiewicz,
Hartmut Buhmann,
Laurens W. Molenkamp
Abstract:
The realization of the quantum spin Hall effect in HgTe quantum wells has led to the development of topological materials which, in combination with magnetism and superconductivity, are predicted to host chiral Majorana fermions. However, the large magnetization ($\sim$ a few tesla) in conventional quantum anomalous Hall system, makes it challenging to induce superconductivity. Here, we report two…
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The realization of the quantum spin Hall effect in HgTe quantum wells has led to the development of topological materials which, in combination with magnetism and superconductivity, are predicted to host chiral Majorana fermions. However, the large magnetization ($\sim$ a few tesla) in conventional quantum anomalous Hall system, makes it challenging to induce superconductivity. Here, we report two different emergent quantum Hall effects in HgTe quantum wells dilutely alloyed with Mn. Firstly, a novel quantum Hall state emerges from the quantum spin Hall state at an exceptionally low magnetic field of $\sim 50$ mT. Secondly, tuning towards the bulk $p$-regime, we resolve multiple quantum Hall plateaus at fields as low as $20 - 30$ mT, where transport is dominated by a van Hove singularity in the valence band. These emergent quantum Hall phenomena rely critically on the topological band structure of HgTe and their occurrence at very low fields make them an ideal candidate for interfacing with superconductors to realize chiral Majorana fermions.
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Submitted 31 March, 2020;
originally announced April 2020.
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Interplay of Dirac nodes and Volkov-Pankratov surface states in compressively strained HgTe
Authors:
David M. Mahler,
Julian-Benedikt Mayer,
Philipp Leubner,
Lukas Lunczer,
Domenico Di Sante,
Giorgio Sangiovanni,
Ronny Thomale,
Ewelina M. Hankiewicz,
Hartmut Buhmann,
Charles Gould,
Laurens W. Molenkamp
Abstract:
Preceded by the discovery of topological insulators, Dirac and Weyl semimetals have become a pivotal direction of research in contemporary condensed matter physics. While easily accessible from a theoretical viewpoint, these topological semimetals pose a serious challenge in terms of experimental synthesis and analysis to allow for their unambiguous identification. In this work, we report on detai…
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Preceded by the discovery of topological insulators, Dirac and Weyl semimetals have become a pivotal direction of research in contemporary condensed matter physics. While easily accessible from a theoretical viewpoint, these topological semimetals pose a serious challenge in terms of experimental synthesis and analysis to allow for their unambiguous identification. In this work, we report on detailed transport experiments on compressively strained HgTe. Due to the superior sample quality in comparison to other topological semimetallic materials, this enables us to resolve the interplay of topological surface states and semimetallic bulk states to an unprecedented degree of precision and complexity. As our gate design allows us to precisely tune the Fermi level at the Weyl and Dirac points, we identify a magnetotransport regime dominated by Weyl/Dirac bulk state conduction for small carrier densities and by topological surface state conduction for larger carrier densities. As such, similar to topological insulators, HgTe provides the archetypical reference for the experimental investigation of topological semimetals.
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Submitted 4 May, 2020; v1 submitted 25 July, 2019;
originally announced July 2019.
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Interacting topological edge channels
Authors:
Jonas Strunz,
Jonas Wiedenmann,
Christoph Fleckenstein,
Lukas Lunczer,
Wouter Beugeling,
Valentin L. Müller,
Pragya Shekhar,
Niccoló Traverso Ziani,
Saquib Shamim,
Johannes Kleinlein,
Hartmut Buhmann,
Björn Trauzettel,
Laurens W. Molenkamp
Abstract:
Electrical currents in a quantum spin Hall insulator are confined to the boundary of the system. The charge carriers can be described as massless relativistic particles, whose spin and momentum are coupled to each other. While the helical character of those states is by now well established experimentally, it is a fundamental open question how those edge states interact with each other when brough…
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Electrical currents in a quantum spin Hall insulator are confined to the boundary of the system. The charge carriers can be described as massless relativistic particles, whose spin and momentum are coupled to each other. While the helical character of those states is by now well established experimentally, it is a fundamental open question how those edge states interact with each other when brought in spatial proximity. We employ a topological quantum point contact to guide edge channels from opposite sides into a quasi-one-dimensional constriction, based on inverted HgTe quantum wells. Apart from the expected quantization in integer steps of $2 e^2/h$, we find a surprising additional plateau at $e^2/h$. We explain our observation by combining band structure calculations and repulsive electron-electron interaction effects captured within the Tomonaga-Luttinger liquid model. The present results may have direct implications for the study of one-dimensional helical electron quantum optics, Majorana- and potentially para-fermions.
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Submitted 20 May, 2019;
originally announced May 2019.
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Dynamical separation of bulk and edge transport in HgTe-based 2D topological insulators
Authors:
Matthieu C. Dartiailh,
Simon Hartinger,
Alexandre Gourmelon,
Kalle Bendias,
Hugo Bartolomei,
Hiroshi Kamata,
Jean-Marc Berroir,
Gwendal Fève,
Bernard Plaçais,
Lukas Lunczer,
Raimund Schlereth,
Hartmut Buhmann,
Laurens W. Molenkamp,
Erwann Bocquillon
Abstract:
Topological effects in edge states are clearly visible on short lengths only, thus largely impeding their studies. On larger distances, one may be able to dynamically enhance topological signatures by exploiting the high mobility of edge states with respect to bulk carriers. Our work on microwave spectroscopy highlights the responses of the edges which host very mobile carriers, while bulk carrier…
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Topological effects in edge states are clearly visible on short lengths only, thus largely impeding their studies. On larger distances, one may be able to dynamically enhance topological signatures by exploiting the high mobility of edge states with respect to bulk carriers. Our work on microwave spectroscopy highlights the responses of the edges which host very mobile carriers, while bulk carriers are drastically slowed down in the gap. Though the edges are denser than expected, we establish that charge relaxation occurs on short timescales, and suggests that edge states can be addressed selectively on timescales over which bulk carriers are frozen.
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Submitted 8 July, 2019; v1 submitted 29 March, 2019;
originally announced March 2019.
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Residual strain in free-standing CdTe nanowires overgrown with HgTe
Authors:
M. Kessel,
L. Lunczer,
N. V. Tarakina,
C. Brüne,
H. Buhmann,
L. W. Molenkamp
Abstract:
We investigate the crystal properties of CdTe nanowires overgrown with HgTe. Scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM) confirm, that the growth results in a high ensemble uniformity and that the individual heterostructures are single-crystalline, respectively. We use high-resolution X-ray diffraction (HRXRD) to investigate strain, caused by the small l…
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We investigate the crystal properties of CdTe nanowires overgrown with HgTe. Scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM) confirm, that the growth results in a high ensemble uniformity and that the individual heterostructures are single-crystalline, respectively. We use high-resolution X-ray diffraction (HRXRD) to investigate strain, caused by the small lattice mismatch between the two materials. We find that both CdTe and HgTe show changes in lattice constant compared to the respective bulk lattice constants. The measurements reveal a complex strain pattern with signatures of both uniaxial and shear strains present in the overgrown nanowires.
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Submitted 4 December, 2018;
originally announced December 2018.
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Topological Superconductivity in a Phase-Controlled Josephson Junction
Authors:
Hechen Ren,
Falko Pientka,
Sean Hart,
Andrew Pierce,
Michael Kosowsky,
Lukas Lunczer,
Raimund Schlereth,
Benedikt Scharf,
Ewelina M. Hankiewicz,
Laurens W. Molenkamp,
Bertrand I. Halperin,
Amir Yacoby
Abstract:
Topological superconductors can support localized Majorana states at their boundaries. These quasi-particle excitations have non-Abelian statistics that can be used to encode and manipulate quantum information in a topologically protected manner. While signatures of Majorana bound states have been observed in one-dimensional systems, there is an ongoing effort to find alternative platforms that do…
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Topological superconductors can support localized Majorana states at their boundaries. These quasi-particle excitations have non-Abelian statistics that can be used to encode and manipulate quantum information in a topologically protected manner. While signatures of Majorana bound states have been observed in one-dimensional systems, there is an ongoing effort to find alternative platforms that do not require fine-tuning of parameters and can be easily scalable to large numbers of states. Here we present a novel experimental approach towards a two-dimensional architecture. Using a Josephson junction made of HgTe quantum well coupled to thin-film aluminum, we are able to tune between a trivial and a topological superconducting state by controlling the phase difference $φ$ across the junction and applying an in-plane magnetic field. We determine the topological state of the induced superconductor by measuring the tunneling conductance at the edge of the junction. At low magnetic fields, we observe a minimum in the tunneling spectra near zero bias, consistent with a trivial superconductor. However, as the magnetic field increases, the tunneling conductance develops a zero-bias peak which persists over a range of $φ$ that expands systematically with increasing magnetic fields. Our observations are consistent with theoretical predictions for this system and with full quantum mechanical numerical simulations performed on model systems with similar dimensions and parameters. Our work establishes this system as a promising platform for realizing topological superconductivity and for creating and manipulating Majorana modes and will therefore open new avenues for probing topological superconducting phases in two-dimensional systems.
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Submitted 9 September, 2018;
originally announced September 2018.
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Strain Engineering of the Band Gap of HgTe Quantum Wells using Superlattice Virtual Substrates
Authors:
Philipp Leubner,
Lukas Lunczer,
Christoph Brüne,
Hartmut Buhmann,
Laurens W. Molenkamp
Abstract:
The HgTe quantum well (QW) is a well-characterized two-dimensional topological insulator (2D-TI). Its band gap is relatively small (typically on the order of 10 meV), which restricts the observation of purely topological conductance to low temperatures. Here, we utilize the strain-dependence of the band structure of HgTe QWs to address this limitation. We use…
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The HgTe quantum well (QW) is a well-characterized two-dimensional topological insulator (2D-TI). Its band gap is relatively small (typically on the order of 10 meV), which restricts the observation of purely topological conductance to low temperatures. Here, we utilize the strain-dependence of the band structure of HgTe QWs to address this limitation. We use $\text{CdTe}-\text{Cd}_{0.5}\text{Zn}_{0.5}\text{Te}$ strained-layer superlattices on GaAs as virtual substrates with adjustable lattice constant to control the strain of the QW. We present magneto-transport measurements, which demonstrate a transition from a semi- metallic to a 2D-TI regime in wide QWs, when the strain is changed from tensile to compressive. Most notably, we demonstrate a much enhanced energy gap of 55 meV in heavily compressively strained QWs. This value exceeds the highest possible gap on common II-VI substrates by a factor of 2-3, and extends the regime where the topological conductance prevails to much higher temperatures.
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Submitted 4 August, 2016;
originally announced August 2016.
