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Quantum transport signature of strain-induced scalar and pseudo-vector potentials in a crenellated hBN-graphene heterostructure
Authors:
Romaine Kerjouan,
Michael Rosticher,
Aurélie Pierret,
Kenji Watanabe,
Takashi Taniguchi,
Sukhdeep Dhillon,
Robson Ferreira,
Daniel Dolfi,
Mark Goerbig,
Bernard Plaçais,
Juliette Mangeney
Abstract:
The sharp Dirac cone of the electronic dispersion confers to graphene a remarkable sensitivity to strain. It is usually encoded in scalar and pseudo-vector potentials, induced by the modification of hopping parameters, which have given rise to new phenomena at the nanoscale such as giant pseudomagnetic fields and valley polarization. Here, we unveil the effect of these potentials on the quantum tr…
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The sharp Dirac cone of the electronic dispersion confers to graphene a remarkable sensitivity to strain. It is usually encoded in scalar and pseudo-vector potentials, induced by the modification of hopping parameters, which have given rise to new phenomena at the nanoscale such as giant pseudomagnetic fields and valley polarization. Here, we unveil the effect of these potentials on the quantum transport across a succession of strain-induced barriers. We use high-mobility, hBN-encapsulated graphene, transferred over a large (10x10 $μ$m$^{2}$) crenellated hBN substrate. We show the emergence of a broad resistance ancillary peak at positive energy that arises from Klein tunneling barriers induced by the tensile strain at the trench edges. Our theoretical study, in quantitative agreement with experiment, highlights the balanced contributions of strain-induced scalar and pseudo-vector potentials on ballistic transport. Our results establish crenellated van der Waals heterostructures as a promising platform for strain engineering in view of applications and basic physics.
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Submitted 28 February, 2024;
originally announced February 2024.
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The optical absorption in indirect semiconductor to semimetal PtSe2 arises from direct transitions
Authors:
Marin Tharrault,
Sabrine Ayari,
Mehdi Arfaoui,
Eva Desgué,
Romaric Le Goff,
Pascal Morfin,
José Palomo,
Michael Rosticher,
Sihem Jaziri,
Bernard Plaçais,
Pierre Legagneux,
Francesca Carosella,
Christophe Voisin,
Robson Ferreira,
Emmanuel Baudin
Abstract:
$\rm{PtSe_2}$ is a van der Waals material transitioning from an indirect bandgap semiconductor to a semimetal with increasing thickness. Its absorption threshold has been conjectured to originate from interband indirect transitions. By quantitative comparison between broadband ($0.8 - 3.0\,\rm{eV}$) optical absorption of high-quality exfoliated crystals and DFT ab-initio simulations, we prove inst…
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$\rm{PtSe_2}$ is a van der Waals material transitioning from an indirect bandgap semiconductor to a semimetal with increasing thickness. Its absorption threshold has been conjectured to originate from interband indirect transitions. By quantitative comparison between broadband ($0.8 - 3.0\,\rm{eV}$) optical absorption of high-quality exfoliated crystals and DFT ab-initio simulations, we prove instead that the optical absorption arises only from direct transitions. This understanding allows us to shed light on the semiconductor to semimetal transition and to explore the effect of stacking and excitons on the optical absorption.
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Submitted 7 August, 2024; v1 submitted 3 November, 2023;
originally announced November 2023.
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Electroluminescence and Energy Transfer Mediated by Hyperbolic Polaritons
Authors:
L. Abou-Hamdan,
A. Schmitt,
R. Bretel,
S. Rossetti,
M. Tharrault,
D. Mele,
A. Pierret,
M. Rosticher,
T. Taniguchi,
K. Watanabe,
C. Maestre,
C. Journet,
B. Toury,
V. Garnier,
P. Steyer,
J. H. Edgar,
E. Janzen,
J-M. Berroir,
G. Fève,
G. Ménard,
B. Plaçais,
C. Voisin,
J-P. Hugonin,
E. Bailly,
B. Vest
, et al. (4 additional authors not shown)
Abstract:
Under high electrical current, some materials can emit electromagnetic radiation beyond incandescence. This phenomenon, referred to as electroluminescence, leads to the efficient emission of visible photons and is the basis of domestic lighting devices (e.g., light-emitting diodes). In principle, electroluminescence can lead to mid-infrared (mid-IR) emission of confined light-matter excitations ca…
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Under high electrical current, some materials can emit electromagnetic radiation beyond incandescence. This phenomenon, referred to as electroluminescence, leads to the efficient emission of visible photons and is the basis of domestic lighting devices (e.g., light-emitting diodes). In principle, electroluminescence can lead to mid-infrared (mid-IR) emission of confined light-matter excitations called phonon-polaritons, resulting from the coupling of photons with crystal lattice vibrations (optical phonons). In particular, phonon-polaritons arising in the van der Waals crystal hexagonal boron nitride (hBN) exhibit hyperbolic dispersion, which enhances light-matter coupling. For this reason, electroluminescence of hyperbolic phonon-polaritons (HPhPs) has been proposed as an explanation for the peculiar radiative energy transfer within hBN-encapsulated graphene transistors. However, since HPhPs are confined, they are inaccessible in the far-field, so that any hint of electroluminescence is only based on indirect electronic signatures and needs to be confirmed by direct observation. Here, we demonstrate far-field mid-IR (λ = 6.5 μm) electroluminescence of HPhPs excited by strongly biased high-mobility graphene within a van der Waals heterostructure, and we quantify the associated radiative energy transfer through the material. The presence of HPhPs is revealed via far-field mid-IR spectroscopy due to their elastic scattering at discontinuities in the heterostructure. The associated radiative flux is quantified by mid-IR pyrometry of the substrate receiving the energy. This radiative energy transfer is shown to be reduced in hBN with nanoscale inhomogeneities, demonstrating the central role of the electromagnetic environment in this process.
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Submitted 8 July, 2024; v1 submitted 12 October, 2023;
originally announced October 2023.
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High-sensitivity AC-charge detection with a MHz-frequency fluxonium qubit
Authors:
B. -L. Najera-Santos,
R. Rousseau,
K. Gerashchenko,
H. Patange,
A. Riva,
M. Villiers,
T. Briant,
P. -F. Cohadon,
A. Heidmann,
J. Palomo,
M. Rosticher,
H. le Sueur,
A. Sarlette,
W. C. Smith,
Z. Leghtas,
E. Flurin,
T. Jacqmin,
S. Deléglise
Abstract:
Owing to their strong dipole moment and long coherence times, superconducting qubits have demonstrated remarkable success in hybrid quantum circuits. However, most qubit architectures are limited to the GHz frequency range, severely constraining the class of systems they can interact with. The fluxonium qubit, on the other hand, can be biased to very low frequency while being manipulated and read…
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Owing to their strong dipole moment and long coherence times, superconducting qubits have demonstrated remarkable success in hybrid quantum circuits. However, most qubit architectures are limited to the GHz frequency range, severely constraining the class of systems they can interact with. The fluxonium qubit, on the other hand, can be biased to very low frequency while being manipulated and read out with standard microwave techniques. Here, we design and operate a heavy fluxonium with an unprecedentedly low transition frequency of $1.8~\mathrm{MHz}$. We demonstrate resolved sideband cooling of the ``hot'' qubit transition with a final ground state population of $97.7~\%$, corresponding to an effective temperature of $23~μ\mathrm{K}$. We further demonstrate coherent manipulation with coherence times $T_1=34~μ\mathrm{s}$, $T_2^*=39~μ\mathrm{s}$, and single-shot readout of the qubit state. Importantly, by directly addressing the qubit transition with a capacitively coupled waveguide, we showcase its high sensitivity to a radio-frequency field. Through cyclic qubit preparation and interrogation, we transform this low-frequency fluxonium qubit into a frequency-resolved charge sensor. This method results in a charge sensitivity of $33~μ\mathrm{e}/\sqrt{\mathrm{Hz}}$, or an energy sensitivity (in joules per hertz) of $2.8~\hbar$. This method rivals state-of-the-art transport-based devices, while maintaining inherent insensitivity to DC charge noise. The high charge sensitivity combined with large capacitive shunt unlocks new avenues for exploring quantum phenomena in the $1-10~\mathrm{MHz}$ range, such as the strong-coupling regime with a resonant macroscopic mechanical resonator.
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Submitted 26 July, 2023;
originally announced July 2023.
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Electroluminescence of the graphene 2D semi-metal
Authors:
A. Schmitt,
L. Abou-Hamdan,
M. Tharrault,
S. Rossetti,
D. Mele,
R. Bretel,
A. Pierret,
M. Rosticher,
P. Morfin,
T. Taniguchi,
K. Watanabe,
J. M. Berroir,
G. Fève,
G. Ménard,
B. Plaçais,
C. Voisin,
J. P. Hugonin,
J. J. Greffet,
P. Bouchon,
Y. De Wilde,
E. Baudin
Abstract:
Electroluminescence, a non-thermal radiative process, is ubiquitous in semi-conductors and insulators but fundamentally precluded in metals. We show here that this restriction can be circumvented in high-quality graphene. By investigating the radiative emission of semi-metallic graphene field-effect transistors over a broad spectral range, spanning the near- and mid-infrared, we demonstrate direct…
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Electroluminescence, a non-thermal radiative process, is ubiquitous in semi-conductors and insulators but fundamentally precluded in metals. We show here that this restriction can be circumvented in high-quality graphene. By investigating the radiative emission of semi-metallic graphene field-effect transistors over a broad spectral range, spanning the near- and mid-infrared, we demonstrate direct far-field electroluminescence from hBN-encapsulated graphene in the mid-infrared under large bias in ambient conditions. Through a series of test experiments ruling out its incandescence origin, we determine that the electroluminescent signal results from the electrical pumping produced by interband tunneling. We show that the mid-infrared electroluminescence is spectrally shaped by a natural quarter-wave resonance of the heterostructure. This work invites a reassessment of the use of metals and semi-metals as non-equilibrium light emitters, and the exploration of their intriguing specificities in terms of carrier injection and relaxation, as well as emission tunability and switching speed.
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Submitted 8 June, 2023;
originally announced June 2023.
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Top-down integration of a hBN quantum emitter in a monolithic photonic waveguide
Authors:
Domitille Gérard,
Michael Rosticher,
Kenji Watanabe,
Takashi Taniguchi,
Julien Barjon,
Stéphanie Buil,
Jean-Pierre Hermier,
Aymeric Delteil
Abstract:
Integrated quantum photonics, with potential applications in quantum information processing, relies on the integration of quantum emitters into on-chip photonic circuits. Hexagonal boron nitride (hBN) is recognized as a material that is compatible with such implementations, owing to its relatively high refractive index and low losses in the visible range, together with advantageous fabrication tec…
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Integrated quantum photonics, with potential applications in quantum information processing, relies on the integration of quantum emitters into on-chip photonic circuits. Hexagonal boron nitride (hBN) is recognized as a material that is compatible with such implementations, owing to its relatively high refractive index and low losses in the visible range, together with advantageous fabrication techniques. Here, we combine hBN waveguide nanofabrication with the recently demonstrated local generation of quantum emitters using electron irradiation to realize a fully top-down elementary quantum photonic circuit in this material, operating at room temperature. This proof of principle constitutes a first step towards deterministic quantum photonic circuits in hBN.
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Submitted 3 July, 2023; v1 submitted 31 March, 2023;
originally announced April 2023.
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Magneto-exciton limit of quantum Hall breakdown in graphene
Authors:
A. Schmitt,
M. Rosticher,
T. Taniguchi,
K. Watanabe,
G. Fève,
J-M. Berroir,
G. Ménard,
C. Voisin,
M. O. Goerbig,
B. Plaçais,
E. Baudin
Abstract:
One of the intrinsic drift velocity limit of the quantum Hall effect is the collective magneto-exciton (ME) instability. It has been demonstrated in bilayer graphene (BLG) using noise measurements. We reproduce this experiment in monolayer graphene (MLG), and show that the same mechanism carries a direct relativistic signature on the breakdown velocity. Based on theoretical calculations of MLG- an…
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One of the intrinsic drift velocity limit of the quantum Hall effect is the collective magneto-exciton (ME) instability. It has been demonstrated in bilayer graphene (BLG) using noise measurements. We reproduce this experiment in monolayer graphene (MLG), and show that the same mechanism carries a direct relativistic signature on the breakdown velocity. Based on theoretical calculations of MLG- and BLG-ME spectra, we show that Doppler-induced instabilities manifest for a ME phase velocity determined by a universal value of the ME conductivity, set by the Hall conductance.
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Submitted 10 March, 2023; v1 submitted 28 February, 2023;
originally announced February 2023.
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Velocity and confinement of edge plasmons in HgTe-based 2D topological insulators
Authors:
Alexandre Gourmelon,
Elric Frigerio,
Hiroshi Kamata,
Lukas Lunczer,
Anne Denis,
Pascal Morfin,
Michael Rosticher,
Jean-Marc Berroir,
Gwendal Fève,
Bernard Plaçais,
Hartmut Buhmann,
Laurens W. Molenkamp,
Erwann Bocquillon
Abstract:
High-frequency transport in the edge states of the quantum spin Hall (QSH) effect has to date rarely been explored, though it could cast light on the scattering mechanisms taking place therein. We here report on the measurement of the plasmon velocity in topological HgTe quantum wells both in the QSH and quantum Hall (QH) regimes, using harmonic GHz excitations and phase-resolved detection. We obs…
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High-frequency transport in the edge states of the quantum spin Hall (QSH) effect has to date rarely been explored, though it could cast light on the scattering mechanisms taking place therein. We here report on the measurement of the plasmon velocity in topological HgTe quantum wells both in the QSH and quantum Hall (QH) regimes, using harmonic GHz excitations and phase-resolved detection. We observe low plasmon velocities corresponding to large transverse widths, which we ascribe to the prominent influence of charge puddles forming in the vicinity of edge channels. Together with other recent works, it suggests that puddles play an essential role in the edge state physics and probably constitute a main hurdle on the way to clean and robust edge transport.
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Submitted 22 February, 2023;
originally announced February 2023.
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High-field 1/f noise in hBN-encapsulated graphene transistors
Authors:
A. Schmitt,
D. Mele,
M. Rosticher,
T. Taniguchi,
K. Watanabe,
C. Maestre,
C. Journet,
V. Garnier,
G. Fève,
J. M. Berroir,
C. Voisin,
B. Plaçais,
1,
E. Baudin
Abstract:
Low-frequency 1/f noise in electronics is a conductance fluctuation, that has been expressed in terms of a mobility "$α$-noise" by Hooge and Kleinpenning. Understanding this noise in graphene is a key towards high-performance electronics. Early investigations in diffusive graphene have pointed out a deviation from the standard Hooge formula, with a modified expression where the free-carrier densit…
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Low-frequency 1/f noise in electronics is a conductance fluctuation, that has been expressed in terms of a mobility "$α$-noise" by Hooge and Kleinpenning. Understanding this noise in graphene is a key towards high-performance electronics. Early investigations in diffusive graphene have pointed out a deviation from the standard Hooge formula, with a modified expression where the free-carrier density is substituted by a constant density $n_Δ\sim10^{12}\;\mathrm{cm^{-2}}$. We investigate hBN-encapsulated graphene transistors where high mobility gives rise to the non-linear velocity-saturation regime. In this regime, the $α$-noise is accounted for by substituting conductance by differential conductance $G$, ressulting in a bell-shape dependence of flicker noise with bias voltage $V$. The same analysis holds at larger bias in the Zener regime, with two main differences: the first one is a strong enhancement of the Hooge parameter reflecting the hundred-times larger coupling of interband excitations to the hyperbolic phonon-polariton (HPhP) modes of the mid-infrared Reststrahlen (RS) bands of hBN. The second is an exponential suppression of this coupling at large fields, which we attribute to decoherence effects. We also show that the HPhP bands control the amplitude of flicker noise according to the graphene-hBN thermal coupling estimated with microwave noise thermometry. The phenomenology of $α$-noise in graphene supports a quantum-coherent bremsstrahlung interpretation of flicker noise.
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Submitted 13 February, 2023; v1 submitted 27 January, 2023;
originally announced January 2023.
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Mesoscopic Klein-Schwinger effect in graphene
Authors:
A. Schmitt,
P. Vallet,
D. Mele,
M. Rosticher,
T. Taniguchi,
K. Watanabe,
E. Bocquillon,
G. Fève,
J. M. Berroir,
C. Voisin,
J. Cayssol,
M. O. Goerbig,
J. Troost,
E. Baudin,
B. Plaçais
Abstract:
Strong electric field annihilation by particle-antiparticle pair creation, also known as the Schwinger effect, is a non-perturbative prediction of quantum electrodynamics. Its experimental demonstration remains elusive, as threshold electric fields are extremely strong and beyond current reach. Here, we propose a mesoscopic variant of the Schwinger effect in graphene, which hosts Dirac fermions wi…
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Strong electric field annihilation by particle-antiparticle pair creation, also known as the Schwinger effect, is a non-perturbative prediction of quantum electrodynamics. Its experimental demonstration remains elusive, as threshold electric fields are extremely strong and beyond current reach. Here, we propose a mesoscopic variant of the Schwinger effect in graphene, which hosts Dirac fermions with an approximate electron-hole symmetry. Using transport measurements, we report on universal 1d-Schwinger conductance at the pinchoff of ballistic graphene transistors. Strong pinchoff electric fields are concentrated within approximately 1 $μ$m of the transistor's drain, and induce Schwinger electron-hole pair creation at saturation. This effect precedes a collective instability toward an ohmic Zener regime, which is rejected at twice the pinchoff voltage in long devices. These observations advance our understanding of current saturation limits in ballistic graphene and provide a direction for further quantum electrodynamic experiments in the laboratory.
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Submitted 31 January, 2023; v1 submitted 27 July, 2022;
originally announced July 2022.
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One hundred second bit-flip time in a two-photon dissipative oscillator
Authors:
C. Berdou,
A. Murani,
U. Reglade,
W. C. Smith,
M. Villiers,
J. Palomo,
M. Rosticher,
A. Denis,
P. Morfin,
M. Delbecq,
T. Kontos,
N. Pankratova,
F. Rautschke,
T. Peronnin,
L. -A. Sellem,
P. Rouchon,
A. Sarlette,
M. Mirrahimi,
P. Campagne-Ibarcq,
S. Jezouin,
R. Lescanne,
Z. Leghtas
Abstract:
Current implementations of quantum bits (qubits) continue to undergo too many errors to be scaled into useful quantum machines. An emerging strategy is to encode quantum information in the two meta-stable pointer states of an oscillator exchanging pairs of photons with its environment, a mechanism shown to provide stability without inducing decoherence. Adding photons in these states increases the…
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Current implementations of quantum bits (qubits) continue to undergo too many errors to be scaled into useful quantum machines. An emerging strategy is to encode quantum information in the two meta-stable pointer states of an oscillator exchanging pairs of photons with its environment, a mechanism shown to provide stability without inducing decoherence. Adding photons in these states increases their separation, and macroscopic bit-flip times are expected even for a handful of photons, a range suitable to implement a qubit. However, previous experimental realizations have saturated in the millisecond range. In this work, we aim for the maximum bit-flip time we could achieve in a two-photon dissipative oscillator. To this end, we design a Josephson circuit in a regime that circumvents all suspected dynamical instabilities, and employ a minimally invasive fluorescence detection tool, at the cost of a two-photon exchange rate dominated by single-photon loss. We attain bit-flip times of the order of 100 seconds for states pinned by two-photon dissipation and containing about 40 photons. This experiment lays a solid foundation from which the two-photon exchange rate can be gradually increased, thus gaining access to the preparation and measurement of quantum superposition states, and pursuing the route towards a logical qubit with built-in bit-flip protection.
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Submitted 19 April, 2022;
originally announced April 2022.
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Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitride
Authors:
A. Pierret,
D. Mele,
H. Graef,
J. Palomo,
T. Taniguchi,
K. Watanabe,
Y. Li,
B. Toury,
C. Journet,
P. Steyer,
V. Garnier,
A. Loiseau,
J-M. Berroir,
E. Bocquillon,
G. Fève,
C. Voisin,
E. Baudin,
M. Rosticher,
B. Plaçais
Abstract:
In view of the extensive use of hexagonal boron nitride (hBN) in 2D material electronics, it becomes important to refine its dielectric characterization in terms of low-field permittivity and high-field strength and conductivity up to the breakdown voltage. The present study aims at filling this gap using DC and RF transport in two Au-hBN-Au capacitor series of variable thickness in the 10--100 nm…
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In view of the extensive use of hexagonal boron nitride (hBN) in 2D material electronics, it becomes important to refine its dielectric characterization in terms of low-field permittivity and high-field strength and conductivity up to the breakdown voltage. The present study aims at filling this gap using DC and RF transport in two Au-hBN-Au capacitor series of variable thickness in the 10--100 nm range, made of large high-pressure, high-temperature (HPHT) crystals and a polymer derivative ceramics (PDC) crystals. We deduce an out-of-plane low field dielectric constant $ε_\parallel=3.4\pm0.2$ consistent with the theoretical prediction of Ohba et al., that narrows down the generally accepted window $ε_\parallel=3$--$4$. The DC-current leakage at high-field is found to obey the Frenkel-Pool law for thermally-activated trap-assisted electron transport with a dynamic dielectric constant $ε_\parallel\simeq3.1$ and a trap energy $Φ_B\simeq1.3\;\mathrm{eV}$, that is comparable with standard technologically relevant dielectrics.
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Submitted 28 January, 2022; v1 submitted 15 January, 2022;
originally announced January 2022.
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Position-controlled quantum emitters with reproducible emission wavelength in hexagonal boron nitride
Authors:
Clarisse Fournier,
Alexandre Plaud,
Sébastien Roux,
Aurélie Pierret,
Michael Rosticher,
Kenji Watanabe,
Takashi Taniguchi,
Stéphanie Buil,
Xavier Quélin,
Julien Barjon,
Jean-Pierre Hermier,
Aymeric Delteil
Abstract:
Single photon emitters (SPEs) in low-dimensional layered materials have recently gained a large interest owing to the auspicious perspectives of integration and extreme miniaturization offered by this class of materials. However, accurate control of both the spatial location and the emission wavelength of the quantum emitters is essentially lacking to date, thus hindering further technological ste…
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Single photon emitters (SPEs) in low-dimensional layered materials have recently gained a large interest owing to the auspicious perspectives of integration and extreme miniaturization offered by this class of materials. However, accurate control of both the spatial location and the emission wavelength of the quantum emitters is essentially lacking to date, thus hindering further technological steps towards scalable quantum photonic devices. Here, we evidence SPEs in high purity synthetic hexagonal boron nitride (hBN) that can be activated by an electron beam at chosen locations. SPE ensembles are generated with a spatial accuracy better than the cubed emission wavelength, thus opening the way to integration in optical microstructures. Stable and bright single photon emission is subsequently observed in the visible range up to room temperature upon non-resonant laser excitation. Moreover, the low-temperature emission wavelength is reproducible, with an ensemble distribution of width 3 meV, a statistical dispersion that is more than one order of magnitude lower than the narrowest wavelength spreads obtained in epitaxial hBN samples. Our findings constitute an essential step towards the realization of top-down integrated devices based on identical quantum emitters in 2D materials.
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Submitted 8 July, 2021; v1 submitted 24 November, 2020;
originally announced November 2020.
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Edge mode engineering for optimal ultracoherent silicon nitride membranes
Authors:
E. Ivanov,
T. Capelle,
M. Rosticher,
J. Palomo,
T. Briant,
P. -F. Cohadon,
A. Heidmann,
T. Jacqmin,
S. Deléglise
Abstract:
Due to their high force sensitivity, mechanical resonators combining low mechanical dissipation with a small motional mass are highly demanded in fields as diverse as resonant force imaging, mass sensing, or cavity optomechanics. "Soft-clamping" is a phononic engineering technique by which mechanical modes of highly-stressed membranes or strings are localized away from lossy regions, thereby enabl…
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Due to their high force sensitivity, mechanical resonators combining low mechanical dissipation with a small motional mass are highly demanded in fields as diverse as resonant force imaging, mass sensing, or cavity optomechanics. "Soft-clamping" is a phononic engineering technique by which mechanical modes of highly-stressed membranes or strings are localized away from lossy regions, thereby enabling ultrahigh-Q for ng-scale devices. Here, we report on parasitic modes arising from the finite size of the structure which can significantly degrade the performance of these membranes. Through interferometric measurements and finite-element simulations, we show that these parasitic modes can hybridize with the localized modes of our structures, reducing the quality factors by up to one order of magnitude. To circumvent this problem, we engineer the spectral profile of the parasitic modes in order to avoid their overlap with the high-Q defect mode. We verify via a statistical analysis that this modal engineering reproducibly yields higher quality factors in fabricated devices, consistent with theoretically predicted values.
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Submitted 7 October, 2020; v1 submitted 2 October, 2020;
originally announced October 2020.
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Ultrasensitive Photoresponse of Graphene Quantum Dot in the Coulomb Blockade Regime to THz Radiation
Authors:
E. Riccardi,
S. Massabeau,
F. Valmorra,
S. Messelot,
M. Rosticher,
J. Tignon,
K. Watanabe,
T. Taniguchi,
M. Delbecq,
S. Dhillon,
R. Ferreira,
S. Balibar,
T. Kontos,
J. Mangeney
Abstract:
Graphene quantum dots (GQDs) have recently attracted considerable attention, with appealing properties for terahertz (THz) technology. This includes the demonstration of large thermal bolometric effects in GQDs when illuminated by THz radiation. However, the interaction of THz photons with GQDs in the Coulomb blockade regime - single electron transport regime - remains unexplored. Here, we demonst…
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Graphene quantum dots (GQDs) have recently attracted considerable attention, with appealing properties for terahertz (THz) technology. This includes the demonstration of large thermal bolometric effects in GQDs when illuminated by THz radiation. However, the interaction of THz photons with GQDs in the Coulomb blockade regime - single electron transport regime - remains unexplored. Here, we demonstrate the ultrasensitive photoresponse to THz radiation (from <0.1 to 10 THz) of a hBN-encapsulated GQD in the Coulomb blockade regime at low temperature (170 mK). We show that THz radiation of $\sim$10 pW provides a photocurrent response in the nanoampere range, resulting from a renormalization of the chemical potential of the GQD of $\sim$0.15 meV. We attribute this photoresponse to an interfacial photogating effect. Furthermore, our analysis reveals the absence of thermal effects, opening new directions in the study of coherent quantum effects at THz frequencies in GQDs.
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Submitted 4 June, 2020;
originally announced June 2020.
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A corner reflector of graphene Dirac fermions as a phonon-scattering sensor
Authors:
H. Graef,
Q. Wilmart,
M. Rosticher,
D. Mele,
L. Banszerus,
C. Stampfer,
T. Taniguchi,
K. Watanabe,
J-M. Berroir,
E. Bocquillon,
G. Fève,
E. H. T. Teo,
B. Plaçais
Abstract:
Dirac fermion optics exploits the refraction of chiral fermions across optics-inspired Klein-tunneling barriers defined by high-transparency p-n junctions. We consider the corner reflector (CR) geometry introduced in optics or radars. We fabricate Dirac fermion CRs using bottom-gate-defined barriers in hBN-encapsulated graphene. By suppressing transmission upon multiple internal reflections, CRs a…
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Dirac fermion optics exploits the refraction of chiral fermions across optics-inspired Klein-tunneling barriers defined by high-transparency p-n junctions. We consider the corner reflector (CR) geometry introduced in optics or radars. We fabricate Dirac fermion CRs using bottom-gate-defined barriers in hBN-encapsulated graphene. By suppressing transmission upon multiple internal reflections, CRs are sensitive to minute phonon scattering rates. We report on doping-independent CR transmission in quantitative agreement with a simple scattering model including thermal phonon scattering. As a new signature of CRs, we observe Fabry-Pérot oscillations at low temperature, consistent with single-path reflections. Finally, we demonstrate high-frequency operation which promotes CRs as fast phonon detectors. Our work establishes the relevance of Dirac fermion optics in graphene and opens a route for its implementation in topological Dirac matter.
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Submitted 8 January, 2019;
originally announced January 2019.
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Ultra-long wavelength Dirac plasmons in graphene capacitors
Authors:
H. Graef,
D. Mele,
M. Rosticher,
C. Stampfer,
T. Taniguchi,
K. Watanabe,
E. Bocquillon,
G. Fève,
J-M. Berroir,
E. H. T. Teo,
B. Plaçais
Abstract:
Graphene is a valuable 2D platform for plasmonics as illustrated in recent THz and mid-infrared optics experiments. These high-energy plasmons however, couple to the dielectric surface modes giving rise to hybrid plasmon-polariton excitations. Ultra-long-wavelengthes address the low energy end of the plasmon spectrum, in the GHz-THz electronic domain, where intrinsic graphene Dirac plasmons are es…
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Graphene is a valuable 2D platform for plasmonics as illustrated in recent THz and mid-infrared optics experiments. These high-energy plasmons however, couple to the dielectric surface modes giving rise to hybrid plasmon-polariton excitations. Ultra-long-wavelengthes address the low energy end of the plasmon spectrum, in the GHz-THz electronic domain, where intrinsic graphene Dirac plasmons are essentially decoupled from their environment. However experiments are elusive due to the damping by ohmic losses at low frequencies. We demonstrate here a plasma resonance capacitor (PRC) using hexagonal boron-nitride (hBN) encapsulated graphene at cryogenic temperatures in the near ballistic regime. We report on a $100\;\mathrm{μm}$ quarter-wave plasmon mode, at $40\;\mathrm{GHz}$, with a quality factor $Q\simeq2$. The accuracy of the resonant technique yields a precise determination of the electronic compressibility and kinetic inductance, allowing to assess residual deviations from intrinsic Dirac plasmonics. Our capacitor GHz experiment constitutes a first step toward the demonstration of plasma resonance transistors for microwave detection in the sub-THz domain for wireless communications and sensing. It also paves the way to the realization of doping modulated superlattices where plasmon propagation is controlled by Klein tunneling.
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Submitted 22 June, 2018;
originally announced June 2018.
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Probing a two-level system bath via the frequency shift of an off-resonantly-driven cavity
Authors:
Thibault Capelle,
Emmanuel Flurin,
Edouard Ivanov,
Jose Palomo,
Michael Rosticher,
Sheon Chua,
Tristan Briant,
Pierre-François Cohadon,
Antoine Heidmann,
Thibaut Jacqmin,
Samuel Deleglise
Abstract:
Although the main loss channel of planar microwave superconducting resonators has been identified to be related to an external coupling to a two-level system (TLS) bath, the behavior of such a cavity in the presence of an off-resonant pump has yet to be fully understood. Here a semi-classical model that predicts a power-dependent frequency shift besides the well-known TLS-induced damping is derive…
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Although the main loss channel of planar microwave superconducting resonators has been identified to be related to an external coupling to a two-level system (TLS) bath, the behavior of such a cavity in the presence of an off-resonant pump has yet to be fully understood. Here a semi-classical model that predicts a power-dependent frequency shift besides the well-known TLS-induced damping is derived. The model is validated experimentally by performing a two-tone spectroscopy of several resonators fabricated on various substrates. Together with the provided analytic formulas, the technique proposed here is a simple, yet powerful, tool to characterize various properties of the TLS bath, such as their average dephasing rate.
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Submitted 23 December, 2019; v1 submitted 11 May, 2018;
originally announced May 2018.
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Contact gating at GHz frequency in graphene
Authors:
Q. Wilmart,
A. Inhofer,
M. Boukhicha,
W. Yang,
M. Rosticher,
P. Morfin,
N. Garroum,
G. Fève,
J. -M. Berroir,
B. Plaçais
Abstract:
The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the scaling limit of the channel length and further restrictions due to access and contact resistances impeding the device performance. We propose a novel design, overcoming these issues by implementing additional local gates…
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The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the scaling limit of the channel length and further restrictions due to access and contact resistances impeding the device performance. We propose a novel design, overcoming these issues by implementing additional local gates underneath the contact region which allow a full control of the Klein barrier taking place at the contact edge. In particular, our work demonstrates the GHz operation of transistors driven by independent contact gates. We benchmark the standard channel and novel contact gating and report for the later dynamical transconductance levels at the state of the art. Our finding may find applications in electronics and optoelectronics whenever there is need to control independently the Fermi level and the electrostatic potential of electronic sources or to get rid of cumbersome local channel gates.
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Submitted 29 April, 2018;
originally announced April 2018.
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A graphene Zener-Klein transistor cooled by a hyperbolic substrate
Authors:
W. Yang,
S. Berthou,
X. Lu,
Q. Wilmart,
A. Denis,
M. Rosticher,
T. Taniguchi,
K. Watanabe,
G. Feve,
J. M. Berroir,
G. Zhang,
C. Voisin,
E. Baudin,
B. Plaçais
Abstract:
Engineering of cooling mechanisms is a bottleneck in nanoelectronics. Whereas thermal exchanges in diffusive graphene are mostly driven by defect assisted acoustic phonon scattering, the case of high-mobility graphene on hexagonal Boron Nitride (hBN) is radically different with a prominent contribution of remote phonons from the substrate. A bi-layer graphene on hBN transistor with local gate is d…
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Engineering of cooling mechanisms is a bottleneck in nanoelectronics. Whereas thermal exchanges in diffusive graphene are mostly driven by defect assisted acoustic phonon scattering, the case of high-mobility graphene on hexagonal Boron Nitride (hBN) is radically different with a prominent contribution of remote phonons from the substrate. A bi-layer graphene on hBN transistor with local gate is driven in a regime where almost perfect current saturation is achieved by compensation of the decrease of the carrier density and Zener-Klein tunneling (ZKT) at high bias. Using noise thermometry, we show that this Zener-Klein tunneling triggers a new cooling pathway due to the emission of hyperbolic phonon polaritons (HPP) in hBN by out-of-equilibrium electron-hole pairs beyond the super-Planckian regime. The combination of ZKT-transport and HPP-cooling promotes graphene on BN transistors as a valuable nanotechnology for power devices and RF electronics.
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Submitted 25 April, 2018; v1 submitted 9 February, 2017;
originally announced February 2017.
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Electron cotunneling transport in gold nanocrystal arrays
Authors:
H. Moreira,
Q. Yu,
B. Nadal,
B. Bresson,
M. Rosticher,
N. Lequeux,
A. Zimmers,
H. Aubin
Abstract:
We describe current-voltage characteristics I(V) of alkyl-ligated gold nanocrystals $\sim 5 nm$ arrays in long screening length limit. Arrays with different alkyl ligand lengths have been prepared to tune the electronic tunnel coupling between the nanocrystals. For long ligands, electronic diffusion occurs through sequential tunneling and follows activated laws, as function of temperature…
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We describe current-voltage characteristics I(V) of alkyl-ligated gold nanocrystals $\sim 5 nm$ arrays in long screening length limit. Arrays with different alkyl ligand lengths have been prepared to tune the electronic tunnel coupling between the nanocrystals. For long ligands, electronic diffusion occurs through sequential tunneling and follows activated laws, as function of temperature $σ\propto e^{-T_0/T}$ and as function of electric field $I \propto e^{-\mathcal{E}_0/\mathcal{E}}$. For better conducting arrays, i.e. with small ligands, the transport properties crossover to the cotunneling regime and follows Efros-Shklovskii laws as function of temperature $σ\propto e^{-(T_{ES}/T)^{1/2}}$ and as function of electric field $I \propto e^{-(\mathcal{E}_{ES}/\mathcal{E})^{1/2}}$. The data shows that electronic transport in nanocrystal arrays can be tuned from the sequential tunneling to the cotunneling regime by increasing the tunnel barrier transparency.
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Submitted 19 October, 2011;
originally announced October 2011.
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High-resolution spatial mapping of a superconducting NbN wire using single-electron detection
Authors:
A. Lupascu,
A. Emmert,
M. Brune,
G. Nogues,
M. Rosticher,
F. -R. Ladan,
J. -P. Maneval,
J. -C. Villegier
Abstract:
Superconducting NbN wires have recently received attention as detectors for visible and infrared photons. We present experiments in which we use a NbN wire for high-efficiency (40 %) detection of single electrons with keV energy. We use the beam of a scanning electron microscope as a focussed, stable, and calibrated electron source. Scanning the beam over the surface of the wire provides a map of…
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Superconducting NbN wires have recently received attention as detectors for visible and infrared photons. We present experiments in which we use a NbN wire for high-efficiency (40 %) detection of single electrons with keV energy. We use the beam of a scanning electron microscope as a focussed, stable, and calibrated electron source. Scanning the beam over the surface of the wire provides a map of the detection efficiency. This map shows features as small as 150 nm, revealing wire inhomogeneities. The intrinsic resolution of this mapping method, superior to optical methods, provides the basis of a characterization tool relevant for photon detectors.
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Submitted 21 October, 2010; v1 submitted 25 January, 2009;
originally announced January 2009.
