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Van Der Waals Heteroepitaxy of GaSe and InSe, Quantum Wells and Superlattices
Authors:
Marcel S. Claro,
Juan P. Martínez-Pastor,
Alejandro Molina-Sánchez,
Khalil El Hajraoui,
Justyna Grzonka,
Hamid Pashaei Adl,
David Fuertes Marrón,
Paulo J. Ferreira,
Alex Bondarchuk,
Sascha Sadewasser
Abstract:
Bandgap engineering and quantum confinement in semiconductor heterostructures provide the means to fine-tune material response to electromagnetic fields and light in a wide range of the spectrum. Nonetheless, forming semiconductor heterostructures on lattice-mismatched substrates has been a challenge for several decades, leading to restrictions for device integration and the lack of efficient devi…
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Bandgap engineering and quantum confinement in semiconductor heterostructures provide the means to fine-tune material response to electromagnetic fields and light in a wide range of the spectrum. Nonetheless, forming semiconductor heterostructures on lattice-mismatched substrates has been a challenge for several decades, leading to restrictions for device integration and the lack of efficient devices in important wavelength bands. Here, we show that the van der Waals epitaxy of two-dimensional (2D) GaSe and InSe heterostructures occur on substrates with substantially different lattice parameters, namely silicon and sapphire. The GaSe/InSe heterostructures were applied in the growth of quantum wells and superlattices presenting photoluminescence and absorption related to interband transitions. Moreover, we demonstrate a self-powered photodetector based on this heterostructure on Si that works in the visible-NIR wavelength range. Fabricated at wafer-scale, these results pave the way for an easy integration of optoelectronics based on these layered 2D materials in current Si technology.
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Submitted 11 October, 2022; v1 submitted 13 June, 2022;
originally announced June 2022.
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Out-of-plane emission of trions in monolayer WSe2 revealed by whispering gallery modes of dielectric microresonators
Authors:
D. Andres-Penares,
M. K. Habil,
A. Molina-Sánchez,
C. J. Zapata-Rodríguez,
J. P. Martínez-Pastor,
J. F. Sánchez-Royo
Abstract:
The manipulation of light emitted by two-dimensional semiconductors grounds forthcoming technologies in the field of on-chip communications. However, these technologies require from the so elusive out-of-plane photon sources to achieve an efficient coupling of radiated light into planar devices. Here we propose a versatile spectroscopic method that enables the identification of the out-of-plane co…
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The manipulation of light emitted by two-dimensional semiconductors grounds forthcoming technologies in the field of on-chip communications. However, these technologies require from the so elusive out-of-plane photon sources to achieve an efficient coupling of radiated light into planar devices. Here we propose a versatile spectroscopic method that enables the identification of the out-of-plane component of dipoles. The method is based on the selective coupling of light emitted by in-plane and out-of-plane dipoles to the whispering gallery modes of spherical dielectric microresonators, in close contact to them. We have applied this method to demonstrate the existence of dipoles with an out-of-plane orientation in monolayer WSe2 at room temperature. Micro-photoluminescent measurements, numerical simulations based on finite element methods, and ab-initio calculations have identified trions as the source responsible for this out-of-plane emission, opening new routes for realizing on-chip integrated systems with applications in information processing and quantum communications.
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Submitted 2 March, 2021;
originally announced March 2021.
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Charge control in laterally coupled double quantum dots
Authors:
G. Muñoz-Matutano,
M. Royo,
J. I. Climente,
J. Canet-Ferrer,
D. Fuster,
P. Alonso-González,
I. Fernández-Martínez,
J. Martínez-Pastor,
Y. González,
L. González,
F. Briones,
B. Alén
Abstract:
We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric field applied along the quantum dot pair mutual axis. The number of confined electrons can be controlled with the external bias leading to sharp energy shifts whi…
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We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric field applied along the quantum dot pair mutual axis. The number of confined electrons can be controlled with the external bias leading to sharp energy shifts which we use to identify the emission from neutral and charged exciton complexes. Quantum tunnelling of these electrons is proposed to explain the reversed ordering of the trion emission lines as compared to that of excitons in our system.
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Submitted 20 September, 2011; v1 submitted 26 April, 2011;
originally announced April 2011.
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Electrical control of a laterally ordered InAs/InP quantum dash array
Authors:
B. Alen,
D. Fuster,
I. Fernandez-Martinez,
J. Martinez-Pastor,
Y. Gonzalez,
F. Briones,
L. Gonzalez
Abstract:
We have fabricated an array of closely spaced quantum dashes starting from a planar array of self-assembled semiconductor quantum wires. The array is embedded in a metallic nanogap which we investigate by micro-photoluminescence as a function of a lateral electric field. We demonstrate that the net electric charge and emission energy of individual quantum dashes can be modified externally with p…
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We have fabricated an array of closely spaced quantum dashes starting from a planar array of self-assembled semiconductor quantum wires. The array is embedded in a metallic nanogap which we investigate by micro-photoluminescence as a function of a lateral electric field. We demonstrate that the net electric charge and emission energy of individual quantum dashes can be modified externally with performance limited by the size inhomogeneity of the self-assembling process.
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Submitted 16 November, 2009; v1 submitted 4 March, 2008;
originally announced March 2008.
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Exciton Gas Compression and Metallic Condensation in a Single Semiconductor Quantum Wire
Authors:
Benito Alen,
David Fuster,
Guillermo Munoz-Matutano,
Juan Martinez-Pastor,
Yolanda Gonzalez,
Luisa Gonzalez
Abstract:
We study the metal-insulator transition in individual self-assembled quantum wires and report optical evidences of metallic liquid condensation at low temperatures. Firstly, we observe that the temperature and power dependence of the single nanowire photoluminescence follow the evolution expected for an electron-hole liquid in one dimension. Secondly, we find novel spectral features that suggest…
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We study the metal-insulator transition in individual self-assembled quantum wires and report optical evidences of metallic liquid condensation at low temperatures. Firstly, we observe that the temperature and power dependence of the single nanowire photoluminescence follow the evolution expected for an electron-hole liquid in one dimension. Secondly, we find novel spectral features that suggest that in this situation the expanding liquid condensate compresses the exciton gas in real space. Finally, we estimate the critical density and critical temperature of the phase transition diagram at $n_c\sim1\times10^5$ cm$^{-1}$ and $T_c\sim35$ K, respectively.
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Submitted 12 August, 2008; v1 submitted 30 January, 2008;
originally announced January 2008.
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Optical pumping of charged excitons in unintentionally doped InAs quantum dots
Authors:
G. Munoz-Matutano,
B. Alen,
J. Martinez-Pastor,
L. Seravalli,
P. Frigeri,
S. Franchi
Abstract:
As an alternative to commonly used electrical methods, we have investigated the optical pumping of charged exciton complexes addressing impurity related transitions with photons of the appropriate energy. Under these conditions, we demonstrate that the pumping fidelity can be very high while still maintaining a switching behavior between the different excitonic species. This mechanism has been i…
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As an alternative to commonly used electrical methods, we have investigated the optical pumping of charged exciton complexes addressing impurity related transitions with photons of the appropriate energy. Under these conditions, we demonstrate that the pumping fidelity can be very high while still maintaining a switching behavior between the different excitonic species. This mechanism has been investigated for single quantum dots of different size present in the same sample and compared with the direct injection of spectator electrons from nearby donors.
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Submitted 18 April, 2007;
originally announced April 2007.
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InAs/InP single quantum wire formation and emission at 1.5 microns
Authors:
B. Alén,
D. Fuster,
Y. González,
L. González,
J. Martínez-Pastor,
M. U. González,
J. M. García
Abstract:
Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length exceeding more than ten times their width. High resolution optical investigation of as-grown samples reveals strong photoluminescence from individual quantum wi…
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Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length exceeding more than ten times their width. High resolution optical investigation of as-grown samples reveals strong photoluminescence from individual quantum wires at 1.5 microns. Additional sharp features are related to monolayer fluctuations of the two dimensional InAs layer present during the early stages of the quantum wire self-assembling process.
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Submitted 5 October, 2006; v1 submitted 6 June, 2006;
originally announced June 2006.
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Optical studies of gap, hopping energies and the Anderson-Hubbard parameter in the zigzag-chain compound SrCuO2
Authors:
Z. V. Popovic,
V. A. Ivanov,
M. J. Konstantinovic,
A. Cantarero,
J. Martinez-Pastor,
D. Olguin,
M. I. Alonso,
M. Garriga,
O. P. Khuong,
A. Vietkin,
V. V. Moshchalkov
Abstract:
We have investigated the electronic structure of the zigzag ladder (chain) compound SrCuO2 combining polarized optical absorption, reflection, photoreflectance and pseudo-dielectric function measurements with the model calculations. These measurements yield an energy gap of 1.42 eV (1.77 eV) at 300 K along (perpendicular) to the Cu-O chains. We have found that the lowest energy gap, the correlat…
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We have investigated the electronic structure of the zigzag ladder (chain) compound SrCuO2 combining polarized optical absorption, reflection, photoreflectance and pseudo-dielectric function measurements with the model calculations. These measurements yield an energy gap of 1.42 eV (1.77 eV) at 300 K along (perpendicular) to the Cu-O chains. We have found that the lowest energy gap, the correlation gap, is temperature independent. The electronic structure of this oxide is calculated using both the local-spin-density-approximation with gradient correction method, and the tight-binding theory for the correlated electrons. The calculated density of electronic states for non-correlated and correlated electrons shows quasi-one-dimensional character. The correlation gap values of 1.42 eV (indirect transition) and 1.88 eV (direct transition) have been calculated with the electron hopping parameters t = 0.30 eV (along a chain), t_yz = 0.12 eV (between chains) and the Anderson-Hubbard repulsion on copper sites U= 2.0 eV. We concluded that SrCuO_2 belongs to the correlated-gap insulators.
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Submitted 19 January, 2001;
originally announced January 2001.
