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Formation and Microwave Losses of Hydrides in Superconducting Niobium Thin Films Resulting from Fluoride Chemical Processing
Authors:
Carlos G. Torres-Castanedo,
Dominic P. Goronzy,
Thang Pham,
Anthony McFadden,
Nicholas Materise,
Paul Masih Das,
Matthew Cheng,
Dmitry Lebedev,
Stephanie M. Ribet,
Mitchell J. Walker,
David A. Garcia-Wetten,
Cameron J. Kopas,
Jayss Marshall,
Ella Lachman,
Nikolay Zhelev,
James A. Sauls,
Joshua Y. Mutus,
Corey Rae H. McRae,
Vinayak P. Dravid,
Michael J. Bedzyk,
Mark C. Hersam
Abstract:
Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potenti…
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Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potentially negatively impacting microwave loss performance. Here, we present comprehensive materials characterization of Nb hydrides formed in Nb thin films as a function of fluoride chemical treatments. In particular, secondary-ion mass spectrometry, X-ray scattering, and transmission electron microscopy reveal the spatial distribution and phase transformation of Nb hydrides. The rate of hydride formation is determined by the fluoride solution acidity and the etch rate of Nb2O5, which acts as a diffusion barrier for hydrogen into Nb. The resulting Nb hydrides are detrimental to Nb superconducting properties and lead to increased power-independent microwave loss in coplanar waveguide resonators. However, Nb hydrides do not correlate with two-level system loss or device aging mechanisms. Overall, this work provides insight into the formation of Nb hydrides and their role in microwave loss, thus guiding ongoing efforts to maximize coherence time in superconducting quantum devices.
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Submitted 5 April, 2024;
originally announced April 2024.
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Grain size in low loss superconducting Ta thin films on c-axis sapphire
Authors:
Sarah Garcia Jones,
Nicholas Materise,
Ka Wun Leung,
Brian D. Isakov,
Xi Chen,
Jiangchang Zheng,
Andras Gyenis,
Berthold Jaeck,
Corey Rae H. McRae
Abstract:
In recent years, the implementation of thin-film Ta has led to improved coherence times in superconducting circuits. Efforts to further optimize this materials set have become a focus of the subfield of materials for superconducting quantum computing. It has been previously hypothesized that grain size could be correlated with device performance. In this work, we perform a comparative grain size e…
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In recent years, the implementation of thin-film Ta has led to improved coherence times in superconducting circuits. Efforts to further optimize this materials set have become a focus of the subfield of materials for superconducting quantum computing. It has been previously hypothesized that grain size could be correlated with device performance. In this work, we perform a comparative grain size experiment with $α$-Ta on $c$-axis sapphire. Our evaluation methods include both room-temperature chemical and structural characterization and cryogenic microwave measurements, and we report no statistical difference in device performance between small- and larger-grain-size devices with grain sizes of 924 nm$^2$ and 1700 nm$^2$, respectively. These findings suggest that grain size is not correlated with loss in the parameter regime of interest for Ta grown on c-axis sapphire, narrowing the parameter space for optimization of this materials set.
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Submitted 25 July, 2023; v1 submitted 21 July, 2023;
originally announced July 2023.
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Disentangling the sources of ionizing radiation in superconducting qubits
Authors:
L. Cardani,
I. Colantoni,
A. Cruciani,
F. De Dominicis,
G. D'Imperio,
M. Laubenstein,
A. Mariani,
L. Pagnanini,
S. Pirro,
C. Tomei,
N. Casali,
F. Ferroni,
D. Frolov,
L. Gironi,
A. Grassellino,
M. Junker,
C. Kopas,
E. Lachman,
C. R. H. McRae,
J. Mutus,
M. Nastasi,
D. P. Pappas,
R. Pilipenko,
M. Sisti,
V. Pettinacci
, et al. (5 additional authors not shown)
Abstract:
Radioactivity was recently discovered as a source of decoherence and correlated errors for the real-world implementation of superconducting quantum processors. In this work, we measure levels of radioactivity present in a typical laboratory environment (from muons, neutrons, and gamma's emitted by naturally occurring radioactive isotopes) and in the most commonly used materials for the assembly an…
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Radioactivity was recently discovered as a source of decoherence and correlated errors for the real-world implementation of superconducting quantum processors. In this work, we measure levels of radioactivity present in a typical laboratory environment (from muons, neutrons, and gamma's emitted by naturally occurring radioactive isotopes) and in the most commonly used materials for the assembly and operation of state-of-the-art superconducting qubits. We develop a GEANT-4 based simulation to predict the rate of impacts and the amount of energy released in a qubit chip from each of the mentioned sources. We finally propose mitigation strategies for the operation of next-generation qubits in a radio-pure environment.
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Submitted 24 November, 2022;
originally announced November 2022.
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Quantum computing hardware for HEP algorithms and sensing
Authors:
M. Sohaib Alam,
Sergey Belomestnykh,
Nicholas Bornman,
Gustavo Cancelo,
Yu-Chiu Chao,
Mattia Checchin,
Vinh San Dinh,
Anna Grassellino,
Erik J. Gustafson,
Roni Harnik,
Corey Rae Harrington McRae,
Ziwen Huang,
Keshav Kapoor,
Taeyoon Kim,
James B. Kowalkowski,
Matthew J. Kramer,
Yulia Krasnikova,
Prem Kumar,
Doga Murat Kurkcuoglu,
Henry Lamm,
Adam L. Lyon,
Despina Milathianaki,
Akshay Murthy,
Josh Mutus,
Ivan Nekrashevich
, et al. (15 additional authors not shown)
Abstract:
Quantum information science harnesses the principles of quantum mechanics to realize computational algorithms with complexities vastly intractable by current computer platforms. Typical applications range from quantum chemistry to optimization problems and also include simulations for high energy physics. The recent maturing of quantum hardware has triggered preliminary explorations by several ins…
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Quantum information science harnesses the principles of quantum mechanics to realize computational algorithms with complexities vastly intractable by current computer platforms. Typical applications range from quantum chemistry to optimization problems and also include simulations for high energy physics. The recent maturing of quantum hardware has triggered preliminary explorations by several institutions (including Fermilab) of quantum hardware capable of demonstrating quantum advantage in multiple domains, from quantum computing to communications, to sensing. The Superconducting Quantum Materials and Systems (SQMS) Center, led by Fermilab, is dedicated to providing breakthroughs in quantum computing and sensing, mediating quantum engineering and HEP based material science. The main goal of the Center is to deploy quantum systems with superior performance tailored to the algorithms used in high energy physics. In this Snowmass paper, we discuss the two most promising superconducting quantum architectures for HEP algorithms, i.e. three-level systems (qutrits) supported by transmon devices coupled to planar devices and multi-level systems (qudits with arbitrary N energy levels) supported by superconducting 3D cavities. For each architecture, we demonstrate exemplary HEP algorithms and identify the current challenges, ongoing work and future opportunities. Furthermore, we discuss the prospects and complexities of interconnecting the different architectures and individual computational nodes. Finally, we review several different strategies of error protection and correction and discuss their potential to improve the performance of the two architectures. This whitepaper seeks to reach out to the HEP community and drive progress in both HEP research and QIS hardware.
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Submitted 29 April, 2022; v1 submitted 18 April, 2022;
originally announced April 2022.
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Simple coplanar waveguide resonator mask targeting metal-substrate interface
Authors:
Cameron J. Kopas,
Ella Lachman,
Corey Rae H. McRae,
Yuvraj Mohan,
Josh Y. Mutus,
Ani Nersisyan,
Amrit Poudel
Abstract:
This white paper presents a single-layer mask, found at https://github.com/Boulder-Cryogenic-Quantum-Testbed/simple-resonator-mask. It is designed for fabrication of superconducting microwave resonators towards 1:1 comparisons of dielectric losses from the metal-substrate interface. Finite-element electromagnetic simulations are used to determine participation ratios of the four major regions of t…
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This white paper presents a single-layer mask, found at https://github.com/Boulder-Cryogenic-Quantum-Testbed/simple-resonator-mask. It is designed for fabrication of superconducting microwave resonators towards 1:1 comparisons of dielectric losses from the metal-substrate interface. Finite-element electromagnetic simulations are used to determine participation ratios of the four major regions of the on-chip devices, as well as to confirm lack of crosstalk between neighboring devices and demonstrate coupling tunability over three orders of magnitude. This mask is intended as an open-source community resource for facilitating precise and accurate comparisons of materials in the single-photon, millikelvin regime.
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Submitted 14 April, 2022;
originally announced April 2022.
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Building a Quantum Engineering Undergraduate Program
Authors:
Abraham Asfaw,
Alexandre Blais,
Kenneth R. Brown,
Jonathan Candelaria,
Christopher Cantwell,
Lincoln D. Carr,
Joshua Combes,
Dripto M. Debroy,
John M. Donohue,
Sophia E. Economou,
Emily Edwards,
Michael F. J. Fox,
Steven M. Girvin,
Alan Ho,
Hilary M. Hurst,
Zubin Jacob,
Blake R. Johnson,
Ezekiel Johnston-Halperin,
Robert Joynt,
Eliot Kapit,
Judith Klein-Seetharaman,
Martin Laforest,
H. J. Lewandowski,
Theresa W. Lynn,
Corey Rae H. McRae
, et al. (12 additional authors not shown)
Abstract:
The rapidly growing quantum information science and engineering (QISE) industry will require both quantum-aware and quantum-proficient engineers at the bachelor's level. We provide a roadmap for building a quantum engineering education program to satisfy this need. For quantum-aware engineers, we describe how to design a first quantum engineering course accessible to all STEM students. For the edu…
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The rapidly growing quantum information science and engineering (QISE) industry will require both quantum-aware and quantum-proficient engineers at the bachelor's level. We provide a roadmap for building a quantum engineering education program to satisfy this need. For quantum-aware engineers, we describe how to design a first quantum engineering course accessible to all STEM students. For the education and training of quantum-proficient engineers, we detail both a quantum engineering minor accessible to all STEM majors, and a quantum track directly integrated into individual engineering majors. We propose that such programs typically require only three or four newly developed courses that complement existing engineering and science classes available on most larger campuses. We describe a conceptual quantum information science course for implementation at any post-secondary institution, including community colleges and military schools. QISE presents extraordinary opportunities to work towards rectifying issues of inclusivity and equity that continue to be pervasive within engineering. We present a plan to do so and describe how quantum engineering education presents an excellent set of education research opportunities. Finally, we outline a hands-on training plan on quantum hardware, a key component of any quantum engineering program, with a variety of technologies including optics, atoms and ions, cryogenic and solid-state technologies, nanofabrication, and control and readout electronics. Our recommendations provide a flexible framework that can be tailored for academic institutions ranging from teaching and undergraduate-focused two- and four-year colleges to research-intensive universities.
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Submitted 3 August, 2021;
originally announced August 2021.
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Perspective: Reproducible Coherence Characterization of Superconducting Quantum Devices
Authors:
Corey Rae H McRae,
Gregory M Stiehl,
Haozhi Wang,
Sheng-Xiang Lin,
Shane A Caldwell,
David P Pappas,
Josh Mutus,
Joshua Combes
Abstract:
As the field of superconducting quantum computing approaches maturity, optimization of single-device performance is proving to be a promising avenue towards large-scale quantum computers. However, this optimization is possible only if performance metrics can be accurately compared among measurements, devices, and laboratories. Currently such comparisons are inaccurate or impossible due to understu…
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As the field of superconducting quantum computing approaches maturity, optimization of single-device performance is proving to be a promising avenue towards large-scale quantum computers. However, this optimization is possible only if performance metrics can be accurately compared among measurements, devices, and laboratories. Currently such comparisons are inaccurate or impossible due to understudied errors from a plethora of sources. In this Perspective, we outline the current state of error analysis for qubits and resonators in superconducting quantum circuits, and discuss what future investigations are required before superconducting quantum device optimization can be realized.
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Submitted 30 August, 2021; v1 submitted 17 June, 2021;
originally announced June 2021.
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A universal quantum gate set for transmon qubits with strong ZZ interactions
Authors:
Junling Long,
Tongyu Zhao,
Mustafa Bal,
Ruichen Zhao,
George S. Barron,
Hsiang-sheng Ku,
Joel A. Howard,
Xian Wu,
Corey Rae H. McRae,
Xiu-Hao Deng,
Guilhem J. Ribeill,
Meenakshi Singh,
Thomas A. Ohki,
Edwin Barnes,
Sophia E. Economou,
David P. Pappas
Abstract:
High-fidelity single- and two-qubit gates are essential building blocks for a fault-tolerant quantum computer. While there has been much progress in suppressing single-qubit gate errors in superconducting qubit systems, two-qubit gates still suffer from error rates that are orders of magnitude higher. One limiting factor is the residual ZZ-interaction, which originates from a coupling between comp…
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High-fidelity single- and two-qubit gates are essential building blocks for a fault-tolerant quantum computer. While there has been much progress in suppressing single-qubit gate errors in superconducting qubit systems, two-qubit gates still suffer from error rates that are orders of magnitude higher. One limiting factor is the residual ZZ-interaction, which originates from a coupling between computational states and higher-energy states. While this interaction is usually viewed as a nuisance, here we experimentally demonstrate that it can be exploited to produce a universal set of fast single- and two-qubit entangling gates in a coupled transmon qubit system. To implement arbitrary single-qubit rotations, we design a new protocol called the two-axis gate that is based on a three-part composite pulse. It rotates a single qubit independently of the state of the other qubit despite the strong ZZ-coupling. We achieve single-qubit gate fidelities as high as 99.1% from randomized benchmarking measurements. We then demonstrate both a CZ gate and a CNOT gate. Because the system has a strong ZZ-interaction, a CZ gate can be achieved by letting the system freely evolve for a gate time $t_g=53.8$ ns. To design the CNOT gate, we utilize an analytical microwave pulse shape based on the SWIPHT protocol for realizing fast, low-leakage gates. We obtain fidelities of 94.6% and 97.8% for the CNOT and CZ gates respectively from quantum progress tomography.
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Submitted 23 March, 2021;
originally announced March 2021.
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Cryogenic single-port calibration for superconducting microwave resonator measurements
Authors:
Haozhi Wang,
S. Singh,
C. R. H. McRae,
J. C. Bardin,
S. -X. Lin,
N. Messaoudi,
A. R. Castelli,
Y. J. Rosen,
E. T. Holland,
D. P. Pappas,
J. Y. Mutus
Abstract:
Superconducting circuit testing and materials loss characterization requires robust and reliable methods for the extraction of internal and coupling quality factors of microwave resonators. A common method, imposed by limitations on the device design or experimental configuration, is the single-port reflection geometry, i.e. reflection-mode. However, impedance mismatches in cryogenic systems must…
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Superconducting circuit testing and materials loss characterization requires robust and reliable methods for the extraction of internal and coupling quality factors of microwave resonators. A common method, imposed by limitations on the device design or experimental configuration, is the single-port reflection geometry, i.e. reflection-mode. However, impedance mismatches in cryogenic systems must be accounted for through calibration of the measurement chain while it is at low temperatures. In this paper, we demonstrate a data-based, single-port calibration using commercial microwave standards and a vector network analyzer (VNA) with samples at millikelvin temperature in a dilution refrigerator, making this method useful for measurements of quantum phenomena. Finally, we cross reference our data-based, single-port calibration and reflection measurement with over-coupled 2D- and 3D-resonators against well established two-port techniques corroborating the validity of our method.
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Submitted 2 March, 2021;
originally announced March 2021.
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Cryogenic microwave loss in epitaxial Al/GaAs/Al trilayers for superconducting circuits
Authors:
C. R. H. McRae,
A. McFadden,
R. Zhao,
H. Wang,
J. L. Long,
T. Zhao,
S. Park,
M. Bal,
C. J. Palmstrøm,
D. P. Pappas
Abstract:
Epitaxially-grown superconductor/dielectric/superconductor trilayers have the potential to form high-performance superconducting quantum devices and may even allow scalable superconducting quantum computing with low-surface-area qubits such as the merged-element transmon. In this work, we measure the power-independent loss and two-level-state (TLS) loss of epitaxial, wafer-bonded, and substrate-re…
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Epitaxially-grown superconductor/dielectric/superconductor trilayers have the potential to form high-performance superconducting quantum devices and may even allow scalable superconducting quantum computing with low-surface-area qubits such as the merged-element transmon. In this work, we measure the power-independent loss and two-level-state (TLS) loss of epitaxial, wafer-bonded, and substrate-removed Al/GaAs/Al trilayers by measuring lumped element superconducting microwave resonators at millikelvin temperatures and down to single photon powers. The power-independent loss of the device is $(4.8 \pm 0.1) \times 10^{-5}$ and resonator-induced intrinsic TLS loss is $(6.4 \pm 0.2) \times 10^{-5}$. Dielectric loss extraction is used to determine a lower bound of the intrinsic TLS loss of the trilayer of $7.2 \times 10^{-5}$. The unusually high power-independent loss is attributed to GaAs's intrinsic piezoelectricity.
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Submitted 30 August, 2021; v1 submitted 21 September, 2020;
originally announced September 2020.
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Merged-element transmon
Authors:
R. Zhao,
S. Park,
T. Zhao,
M. Bal,
C. R. H. McRae,
J. Long,
D. P. Pappas
Abstract:
Transmon qubits are ubiquitous in the pursuit of quantum computing using superconducting circuits. However, they have some drawbacks that still need to be addressed. Most importantly, the scalability of transmons is limited by the large device footprint needed to reduce the participation of the lossy capacitive parts of the circuit. In this work, we investigate and evaluate losses in an alternativ…
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Transmon qubits are ubiquitous in the pursuit of quantum computing using superconducting circuits. However, they have some drawbacks that still need to be addressed. Most importantly, the scalability of transmons is limited by the large device footprint needed to reduce the participation of the lossy capacitive parts of the circuit. In this work, we investigate and evaluate losses in an alternative device geometry, namely, the merged-element transmon (mergemon). To this end, we replace the large external shunt capacitor of a traditional transmon with the intrinsic capacitance of a Josephson junction (JJ) and achieve an approximately 100 times reduction in qubit dimensions. We report the implementation of the mergemon using a sputtered Nb--amorphous-Si--Nb trilayer film. In an experiment below 10 mK, the frequency of the readout resonator, capacitively coupled to the mergemon, exhibits a qubit-state dependent shift in the low power regime. The device also demonstrates the single- and multi-photon transitions that represent a weakly anharmonic system in the two-tone spectroscopy. The transition spectra are explained well with master-equation simulations. A participation ratio analysis identifies the dielectric loss of the a-Si tunnel barrier and its interfaces as the dominant source for qubit relaxation. We expect the mergemon to achieve high coherence in relatively small device dimensions when implemented using a low-loss, epitaxially-grown, and lattice-matched trilayer.
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Submitted 1 December, 2020; v1 submitted 17 August, 2020;
originally announced August 2020.
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Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique
Authors:
Anthony McFadden,
Aranya Goswami,
Michael Seas,
Corey Rae H. McRae,
Ruichen Zhao,
David P. Pappas,
Christopher J. Palmstrøm
Abstract:
Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V semiconductor substrates and bonded to silicon and sapphire. Selective etching is used to remove the III-V substrate followed by surface cleaning and superconduct…
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Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V semiconductor substrates and bonded to silicon and sapphire. Selective etching is used to remove the III-V substrate followed by surface cleaning and superconductor regrowth, resulting in epitaxial Al/GaAs/Al tri-layers on sapphire or silicon substrates. Structures are characterized with reflection high energy electron diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, and X-ray diffraction. Applications of these structures to the field of quantum information processing is discussed.
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Submitted 20 July, 2020;
originally announced July 2020.
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Materials loss measurements using superconducting microwave resonators
Authors:
Corey Rae Harrington McRae,
Haozhi Wang,
Jiansong Gao,
Michael Vissers,
Teresa Brecht,
Andrew Dunsworth,
David Pappas,
Josh Mutus
Abstract:
The performance of superconducting circuits for quantum computing is limited by materials losses. In particular, coherence times are typically bounded by two-level system (TLS) losses at single photon powers and millikelvin temperatures. The identification of low loss fabrication techniques, materials, and thin film dielectrics is critical to achieving scalable architectures for superconducting qu…
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The performance of superconducting circuits for quantum computing is limited by materials losses. In particular, coherence times are typically bounded by two-level system (TLS) losses at single photon powers and millikelvin temperatures. The identification of low loss fabrication techniques, materials, and thin film dielectrics is critical to achieving scalable architectures for superconducting quantum computing. Superconducting microwave resonators provide a convenient qubit proxy for assessing performance and studying TLS loss and other mechanisms relevant to superconducting circuits such as non-equilibrium quasiparticles and magnetic flux vortices. In this review article, we provide an overview of considerations for designing accurate resonator experiments to characterize loss, including applicable types of loss, cryogenic setup, device design, and methods for extracting material and interface losses, summarizing techniques that have been evolving for over two decades. Results from measurements of a wide variety of materials and processes are also summarized. Lastly, we present recommendations for the reporting of loss data from superconducting microwave resonators to facilitate materials comparisons across the field.
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Submitted 21 September, 2020; v1 submitted 8 June, 2020;
originally announced June 2020.
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Overlap junctions for superconducting quantum electronics and amplifiers
Authors:
Mustafa Bal,
Junling Long,
Ruichen Zhao,
Haozhi Wang,
Sungoh Park,
Corey Rae Harrington McRae,
Tongyu Zhao,
Russell E. Lake,
Daniil Frolov,
Roman Pilipenko,
Silvia Zorzetti,
Alexander Romanenko,
David P. Pappas
Abstract:
Due to their unique properties as lossless, nonlinear circuit elements, Josephson junctions lie at the heart of superconducting quantum information processing. Previously, we demonstrated a two-layer, submicrometer-scale overlap junction fabrication process suitable for qubits with long coherence times. Here, we extend the overlap junction fabrication process to micrometer-scale junctions. This al…
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Due to their unique properties as lossless, nonlinear circuit elements, Josephson junctions lie at the heart of superconducting quantum information processing. Previously, we demonstrated a two-layer, submicrometer-scale overlap junction fabrication process suitable for qubits with long coherence times. Here, we extend the overlap junction fabrication process to micrometer-scale junctions. This allows us to fabricate other superconducting quantum devices. For example, we demonstrate an overlap-junction-based Josephson parametric amplifier that uses only 2 layers. This efficient fabrication process yields frequency-tunable devices with negligible insertion loss and a gain of ~ 30 dB. Compared to other processes, the overlap junction allows for fabrication with minimal infrastructure, high yield, and state-of-the-art device performance.
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Submitted 21 May, 2020;
originally announced May 2020.
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Dielectric loss extraction for superconducting microwave resonators
Authors:
C. R. H. McRae,
R. E. Lake,
J. L. Long,
M. Bal,
X. Wu,
B. Jugdersuren,
T. H. Metcalf,
X. Liu,
D. P. Pappas
Abstract:
The investigation of two-level-state (TLS) loss in dielectric materials and interfaces remains at the forefront of materials research in superconducting quantum circuits. We demonstrate a method of TLS loss extraction of a thin film dielectric by measuring a lumped element resonator fabricated from a superconductor-dielectric-superconductor trilayer. We extract the dielectric loss by formulating a…
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The investigation of two-level-state (TLS) loss in dielectric materials and interfaces remains at the forefront of materials research in superconducting quantum circuits. We demonstrate a method of TLS loss extraction of a thin film dielectric by measuring a lumped element resonator fabricated from a superconductor-dielectric-superconductor trilayer. We extract the dielectric loss by formulating a circuit model for a lumped element resonator with TLS loss and then fitting to this model using measurements from a set of three resonator designs: a coplanar waveguide resonator, a lumped element resonator with an interdigitated capacitor, and a lumped element resonator with a parallel plate capacitor that includes the dielectric thin film of interest. Unlike other methods, this allows accurate measurement of materials with TLS loss lower than $10^{-6}$. We demonstrate this method by extracting a TLS loss of $1.02 \times 10^{-3}$ for sputtered $\mathrm{Al_2O_3}$ using a set of samples fabricated from an $\mathrm{Al/Al_2O_3/Al}$ trilayer. We observe a difference of 11$\%$ between extracted loss of the trilayer with and without the implementation of this method.
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Submitted 2 May, 2020; v1 submitted 16 September, 2019;
originally announced September 2019.
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Thin film metrology and microwave loss characterization of indium and aluminum/indium superconducting planar resonators
Authors:
C. R. H. McRae,
J. H. Béjanin,
C. T. Earnest,
T. G. McConkey,
J. R. Rinehart,
C. Deimert,
J. P. Thomas,
Z. R. Wasilewski,
M. Mariantoni
Abstract:
Scalable architectures characterized by quantum bits (qubits) with low error rates are essential to the development of a practical quantum computer. In the superconducting quantum computing implementation, understanding and minimizing materials losses is crucial to the improvement of qubit performance. A new material that has recently received particular attention is indium, a low-temperature supe…
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Scalable architectures characterized by quantum bits (qubits) with low error rates are essential to the development of a practical quantum computer. In the superconducting quantum computing implementation, understanding and minimizing materials losses is crucial to the improvement of qubit performance. A new material that has recently received particular attention is indium, a low-temperature superconductor that can be used to bond pairs of chips containing standard aluminum-based qubit circuitry. In this work, we characterize microwave loss in indium and aluminum/indium thin films on silicon substrates by measuring superconducting coplanar waveguide resonators and estimating the main loss parameters at powers down to the sub-photon regime and at temperatures between 10 and 450 mK. We compare films deposited by thermal evaporation, sputtering, and molecular beam epitaxy. We study the effects of heating in vacuum and ambient atmospheric pressure as well as the effects of pre-deposition wafer cleaning using hydrofluoric acid. The microwave measurements are supported by thin film metrology including secondary-ion mass spectrometry. For thermally evaporated and sputtered films, we find that two-level states (TLSs) are the dominating loss mechanism at low photon number and temperature. Thermally evaporated indium is determined to have a TLS loss tangent due to indium oxide of ~5x1e-05. The molecular beam epitaxial films show evidence of formation of a substantial indium-silicon eutectic layer, which leads to a drastic degradation in resonator performance.
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Submitted 22 December, 2017;
originally announced December 2017.
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Mitigating coherent leakage of superconducting qubits in a large-scale quantum socket
Authors:
T. G. McConkey,
J. H. Béjanin,
C. T. Earnest,
C. R. H. McRae,
Z. Pagel,
J. R. Rinehart,
M. Mariantoni
Abstract:
A practical quantum computer requires quantum bit (qubit) operations with low error rates in extensible architectures. We study a packaging method that makes it possible to address hundreds of superconducting qubits by means of three-dimensional wires: The large-scale quantum socket. A qubit chip is housed in a superconducting box, where both box and chip dimensions lead to unwanted modes that can…
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A practical quantum computer requires quantum bit (qubit) operations with low error rates in extensible architectures. We study a packaging method that makes it possible to address hundreds of superconducting qubits by means of three-dimensional wires: The large-scale quantum socket. A qubit chip is housed in a superconducting box, where both box and chip dimensions lead to unwanted modes that can interfere with qubit operations. We theoretically analyze these interference effects in the context of qubit coherent leakage. We propose two methods to mitigate the resulting errors by detuning the resonance frequency of the modes from the qubit frequency. We perform detailed electromagnetic field simulations indicating that the resonance frequency of the modes increases with the number of installed three-dimensional wires and can be engineered to be significantly higher than the highest qubit frequency. Finally, we show preliminary experimental results towards the implementation of a large-scale quantum socket.
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Submitted 12 October, 2017;
originally announced October 2017.
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Thermocompression Bonding Technology for Multilayer Superconducting Quantum Circuits
Authors:
C. R. H. McRae,
J. H. Béjanin,
Z. Pagel,
A. O. Abdallah,
T. G. McConkey,
C. T. Earnest,
J. R. Rinehart,
M. Mariantoni
Abstract:
Extensible quantum computing architectures require a large array of quantum devices operating with low error rates. A quantum processor based on superconducting quantum bits can be scaled up by stacking microchips that each perform different computational functions. In this article, we experimentally demonstrate a thermocompression bonding technology that utilizes indium films as a welding agent t…
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Extensible quantum computing architectures require a large array of quantum devices operating with low error rates. A quantum processor based on superconducting quantum bits can be scaled up by stacking microchips that each perform different computational functions. In this article, we experimentally demonstrate a thermocompression bonding technology that utilizes indium films as a welding agent to attach pairs of lithographically-patterned chips. We perform chip-to-chip indium bonding in vacuum at $190^{\circ}C$ with indium film thicknesses of $150 nm$. We characterize the dc and microwave performance of bonded devices at room and cryogenic temperatures. At $10 mK$, we find a dc bond resistance of $515 nΩmm^2$. Additionally, we show minimal microwave reflections and good transmission up to $6.8 GHz$ in a tunnel-capped, bonded device as compared to a similar uncapped device. As a proof of concept, we fabricate and measure a set of tunnel-capped superconducting resonators, demonstrating that our bonding technology can be used in quantum computing applications.
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Submitted 5 May, 2017;
originally announced May 2017.
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The Quantum Socket: Three-Dimensional Wiring for Extensible Quantum Computing
Authors:
J. H. Béjanin,
T. G. McConkey,
J. R. Rinehart,
C. T. Earnest,
C. R. H. McRae,
D. Shiri,
J. D. Bateman,
Y. Rohanizadegan,
B. Penava,
P. Breul,
S. Royak,
M. Zapatka,
A. G. Fowler,
M. Mariantoni
Abstract:
Quantum computing architectures are on the verge of scalability, a key requirement for the implementation of a universal quantum computer. The next stage in this quest is the realization of quantum error correction codes, which will mitigate the impact of faulty quantum information on a quantum computer. Architectures with ten or more quantum bits (qubits) have been realized using trapped ions and…
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Quantum computing architectures are on the verge of scalability, a key requirement for the implementation of a universal quantum computer. The next stage in this quest is the realization of quantum error correction codes, which will mitigate the impact of faulty quantum information on a quantum computer. Architectures with ten or more quantum bits (qubits) have been realized using trapped ions and superconducting circuits. While these implementations are potentially scalable, true scalability will require systems engineering to combine quantum and classical hardware. One technology demanding imminent efforts is the realization of a suitable wiring method for the control and measurement of a large number of qubits. In this work, we introduce an interconnect solution for solid-state qubits: The quantum socket. The quantum socket fully exploits the third dimension to connect classical electronics to qubits with higher density and better performance than two-dimensional methods based on wire bonding. The quantum socket is based on spring-mounted micro wires the three-dimensional wires that push directly on a micro-fabricated chip, making electrical contact. A small wire cross section (~1 mmm), nearly non-magnetic components, and functionality at low temperatures make the quantum socket ideal to operate solid-state qubits. The wires have a coaxial geometry and operate over a frequency range from DC to 8 GHz, with a contact resistance of ~150 mohm, an impedance mismatch of ~10 ohm, and minimal crosstalk. As a proof of principle, we fabricated and used a quantum socket to measure superconducting resonators at a temperature of ~10 mK.
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Submitted 31 May, 2016;
originally announced June 2016.