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Long distance electron-electron scattering detected with point contacts
Authors:
Lev V. Ginzburg,
Yuze Wu,
Marc P. Röösli,
Pedro Rosso Gomez,
Rebekka Garreis,
Chuyao Tong,
Veronika Stará,
Carolin Gold,
Khachatur Nazaryan,
Serhii Kryhin,
Hiske Overweg,
Christian Reichl,
Matthias Berl,
Takashi Taniguchi,
Kenji Watanabe,
Werner Wegscheider,
Thomas Ihn,
Klaus Ensslin
Abstract:
We measure electron transport through point contacts in an electron gas in AlGaAs/GaAs heterostructures and graphene for a range of temperatures, magnetic fields and electron densities. We find a magnetoconductance peak around B = 0. With increasing temperature, the width of the peak increases monotonically, while its amplitude first increases and then decreases. For GaAs point contacts the peak i…
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We measure electron transport through point contacts in an electron gas in AlGaAs/GaAs heterostructures and graphene for a range of temperatures, magnetic fields and electron densities. We find a magnetoconductance peak around B = 0. With increasing temperature, the width of the peak increases monotonically, while its amplitude first increases and then decreases. For GaAs point contacts the peak is particularly sharp at relatively low temperatures $T\approx$1.5 K: the curve rounds on a scale of few tens of $μ$T hinting at length scales of several millimeters for the corresponding scattering processes. We propose a model based on the transition between different transport regimes with increasing temperature: from ballistic transport to few electron-electron scatterings to hydrodynamic superballistic flow to hydrodynamic Poiseuille-like flow. The model is in qualitative and, in many cases, quantitative agreement with the experimental observations.
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Submitted 11 August, 2023;
originally announced August 2023.
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CropGym: a Reinforcement Learning Environment for Crop Management
Authors:
Hiske Overweg,
Herman N. C. Berghuijs,
Ioannis N. Athanasiadis
Abstract:
Nitrogen fertilizers have a detrimental effect on the environment, which can be reduced by optimizing fertilizer management strategies. We implement an OpenAI Gym environment where a reinforcement learning agent can learn fertilization management policies using process-based crop growth models and identify policies with reduced environmental impact. In our environment, an agent trained with the Pr…
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Nitrogen fertilizers have a detrimental effect on the environment, which can be reduced by optimizing fertilizer management strategies. We implement an OpenAI Gym environment where a reinforcement learning agent can learn fertilization management policies using process-based crop growth models and identify policies with reduced environmental impact. In our environment, an agent trained with the Proximal Policy Optimization algorithm is more successful at reducing environmental impacts than the other baseline agents we present.
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Submitted 23 April, 2021; v1 submitted 9 April, 2021;
originally announced April 2021.
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Tunable Valley Splitting due to Topological Orbital Magnetic Moment in Bilayer Graphene Quantum Point Contacts
Authors:
Yongjin Lee,
Angelika Knothe,
Hiske Overweg,
Marius Eich,
Carolin Gold,
Annika Kurzmann,
Veronika Klasovika,
Takashi Taniguchi,
Kenji Wantanabe,
Vladimir Fal'ko,
Thomas Ihn,
Klaus Ensslin,
Peter Rickhaus
Abstract:
In multivalley semiconductors, the valley degree of freedom can be potentially used to store, manipulate and read quantum information, but its control remains challenging. The valleys in bilayer graphene can be addressed by a perpendicular magnetic field which couples by the valley g-factor. However, control over the valley g-factor has not been demonstrated yet. We experimentally determine the en…
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In multivalley semiconductors, the valley degree of freedom can be potentially used to store, manipulate and read quantum information, but its control remains challenging. The valleys in bilayer graphene can be addressed by a perpendicular magnetic field which couples by the valley g-factor. However, control over the valley g-factor has not been demonstrated yet. We experimentally determine the energy spectrum of a quantum point contact realized by a suitable gate geometry in bilayer graphene. Using finite bias spectroscopy we measure the energy scales arising from the lateral confinement as well as the Zeeman splitting and find a spin g-factor of 2. The valley g-factor can be tuned by a factor of 3 using vertical electric fields, reaching values between 40 and 120. The results are quantitatively explained by a calculation considering topological magnetic moment and its dependence on confinement and the vertical displacement field.
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Submitted 5 March, 2020; v1 submitted 14 November, 2019;
originally announced November 2019.
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The Electronic Thickness of Graphene
Authors:
Peter Rickhaus,
Ming-Hao Liu,
Marcin Kurpas,
Annika Kurzmann,
Yongjin Lee,
Hiske Overweg,
Marius Eich,
Riccardo Pisoni,
Takashi Tamaguchi,
Kenji Wantanabe,
Klaus Richter,
Klaus Ensslin,
Thomas Ihn
Abstract:
The van-der-Waals stacking technique enables the fabrication of heterostructures, where two conducting layers are atomically close. In this case, the finite layer thickness matters for the interlayer electrostatic coupling. Here we investigate the electrostatic coupling of two graphene layers, twisted by 22 degrees such that the layers are decoupled by the huge momentum mismatch between the K and…
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The van-der-Waals stacking technique enables the fabrication of heterostructures, where two conducting layers are atomically close. In this case, the finite layer thickness matters for the interlayer electrostatic coupling. Here we investigate the electrostatic coupling of two graphene layers, twisted by 22 degrees such that the layers are decoupled by the huge momentum mismatch between the K and K' points of the two layers. We observe a splitting of the zero-density lines of the two layers with increasing interlayer energy difference. This splitting is given by the ratio of single-layer quantum capacitance over interlayer capacitance C and is therefore suited to extract C. We explain the large observed value of C by considering the finite dielectric thickness d of each graphene layer and determine d=2.6 Angstrom. In a second experiment we map out the entire density range with a Fabry-Pérot resonator. We can precisely measure the Fermi-wavelength in each layer, showing that the layers are decoupled. We find that the Fermi wavelength exceeds 600nm at the lowest densities and can differ by an order of magnitude between the upper and lower layer. These findings are reproduced using tight-binding calculations.
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Submitted 1 July, 2019;
originally announced July 2019.
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Interpretable Outcome Prediction with Sparse Bayesian Neural Networks in Intensive Care
Authors:
Hiske Overweg,
Anna-Lena Popkes,
Ari Ercole,
Yingzhen Li,
José Miguel Hernández-Lobato,
Yordan Zaykov,
Cheng Zhang
Abstract:
Clinical decision making is challenging because of pathological complexity, as well as large amounts of heterogeneous data generated as part of routine clinical care. In recent years, machine learning tools have been developed to aid this process. Intensive care unit (ICU) admissions represent the most data dense and time-critical patient care episodes. In this context, prediction models may help…
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Clinical decision making is challenging because of pathological complexity, as well as large amounts of heterogeneous data generated as part of routine clinical care. In recent years, machine learning tools have been developed to aid this process. Intensive care unit (ICU) admissions represent the most data dense and time-critical patient care episodes. In this context, prediction models may help clinicians determine which patients are most at risk and prioritize care. However, flexible tools such as artificial neural networks (ANNs) suffer from a lack of interpretability limiting their acceptability to clinicians. In this work, we propose a novel interpretable Bayesian neural network architecture which offers both the flexibility of ANNs and interpretability in terms of feature selection. In particular, we employ a sparsity inducing prior distribution in a tied manner to learn which features are important for outcome prediction. We evaluate our approach on the task of mortality prediction using two real-world ICU cohorts. In collaboration with clinicians we found that, in addition to the predicted outcome results, our approach can provide novel insights into the importance of different clinical measurements. This suggests that our model can support medical experts in their decision making process.
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Submitted 9 September, 2019; v1 submitted 7 May, 2019;
originally announced May 2019.
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Excited states in bilayer graphene quantum dots
Authors:
A. Kurzmann,
M. Eich,
H. Overweg,
M. Mangold,
F. Herman,
P. Rickhaus,
R. Pisoni,
Y. Lee,
R. Garreis,
C. Tong,
K. Watanabe,
T. Taniguchi,
K. Ensslin,
T. Ihn
Abstract:
We report on ground- and excited state transport through an electrostatically defined few-hole quantum dot in bilayer graphene in both parallel and perpendicular applied magnetic fields. A remarkably clear level scheme for the two-particle spectra is found by analyzing finite bias spectroscopy data within a two-particle model including spin and valley degrees of freedom. We identify the two-hole g…
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We report on ground- and excited state transport through an electrostatically defined few-hole quantum dot in bilayer graphene in both parallel and perpendicular applied magnetic fields. A remarkably clear level scheme for the two-particle spectra is found by analyzing finite bias spectroscopy data within a two-particle model including spin and valley degrees of freedom. We identify the two-hole ground-state to be a spin-triplet and valley-singlet state. This spin alignment can be seen as Hund's rule for a valley-degenerate system, which is fundamentally different to quantum dots in carbon nano tubes and GaAs-based quantum dots. The spin-singlet excited states are found to be valley-triplet states by tilting the magnetic field with respect to the sample plane. We quantify the exchange energy to be 0.35meV and measure a valley and spin g-factor of 36 and 2, respectively.
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Submitted 15 April, 2019;
originally announced April 2019.
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Charge detection in gate-defined bilayer graphene quantum dots
Authors:
A. Kurzmann,
H. Overweg,
M. Eich,
A. Pally,
P. Rickhaus,
R. Pisoni,
Y. Lee,
K. Watanabe,
T. Taniguchi,
T. Ihn,
K. Ensslin
Abstract:
We report on charge detection in electrostatically-defined quantum dot devices in bilayer graphene using an integrated charge detector. The device is fabricated without any etching and features a graphite back gate, leading to high quality quantum dots. The charge detector is based on a second quantum dot separated from the first dot by depletion underneath a 150 nm wide gate. We show that Coulomb…
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We report on charge detection in electrostatically-defined quantum dot devices in bilayer graphene using an integrated charge detector. The device is fabricated without any etching and features a graphite back gate, leading to high quality quantum dots. The charge detector is based on a second quantum dot separated from the first dot by depletion underneath a 150 nm wide gate. We show that Coulomb resonances in the sensing dot are sensitive to individual charging events on the nearby quantum dot. The potential change due to single electron charging causes a step-like change (up to 77 %) in the current through the charge detector. Furthermore, the charging states of a quantum dot with tunable tunneling barriers and of coupled quantum dots can be detected.
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Submitted 17 October, 2019; v1 submitted 13 March, 2019;
originally announced March 2019.
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Topologically non-trivial valley states in bilayer graphene quantum point contacts
Authors:
Hiske Overweg,
Angelika Knothe,
Thomas Fabian,
Lukas Linhart,
Peter Rickhaus,
Lucien Wernli,
Kenji Watanabe,
Takashi Taniguchi,
David Sánchez,
Joachim Burgdörfer,
Florian Libisch,
Vladimir I. Fal'ko,
Klaus Ensslin,
Thomas Ihn
Abstract:
We present measurements of quantized conductance in electrostatically induced quantum point contacts in bilayer graphene. The application of a perpendicular magnetic field leads to an intricate pattern of lifted and restored degeneracies with increasing field: at zero magnetic field the degeneracy of quantized one-dimensional subbands is four, because of a twofold spin and a twofold valley degener…
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We present measurements of quantized conductance in electrostatically induced quantum point contacts in bilayer graphene. The application of a perpendicular magnetic field leads to an intricate pattern of lifted and restored degeneracies with increasing field: at zero magnetic field the degeneracy of quantized one-dimensional subbands is four, because of a twofold spin and a twofold valley degeneracy. By switching on the magnetic field, the valley degeneracy is lifted. Due to the Berry curvature states from different valleys split linearly in magnetic field. In the quantum Hall regime fourfold degenerate conductance plateaus reemerge. During the adiabatic transition to the quantum Hall regime, levels from one valley shift by two in quantum number with respect to the other valley, forming an interweaving pattern that can be reproduced by numerical calculations.
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Submitted 6 September, 2018;
originally announced September 2018.
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Interactions and magnetotransport through spin-valley coupled Landau levels in monolayer MoS$_{2}$
Authors:
Riccardo Pisoni,
Andor Kormányos,
Matthew Brooks,
Zijin Lei,
Patrick Back,
Marius Eich,
Hiske Overweg,
Yongjin Lee,
Peter Rickhaus,
Kenji Watanabe,
Takashi Taniguchi,
Atac Imamoglu,
Guido Burkard,
Thomas Ihn,
Klaus Ensslin
Abstract:
The strong spin-orbit coupling and the broken inversion symmetry in monolayer transition metal dichalcogenides (TMDs) results in spin-valley coupled band structures. Such a band structure leads to novel applications in the fields of electronics and optoelectronics. Density functional theory calculations as well as optical experiments have focused on spin-valley coupling in the valence band. Here w…
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The strong spin-orbit coupling and the broken inversion symmetry in monolayer transition metal dichalcogenides (TMDs) results in spin-valley coupled band structures. Such a band structure leads to novel applications in the fields of electronics and optoelectronics. Density functional theory calculations as well as optical experiments have focused on spin-valley coupling in the valence band. Here we present magnetotransport experiments on high-quality n-type monolayer molybdenum disulphide (MoS$_{2}$) samples, displaying highly resolved Shubnikov-de Haas oscillations at magnetic fields as low as $2~T$. We find the effective mass $0.7~m_{e}$, about twice as large as theoretically predicted and almost independent of magnetic field and carrier density. We further detect the occupation of the second spin-orbit split band at an energy of about $15~meV$, i.e. about a factor $5$ larger than predicted. In addition, we demonstrate an intricate Landau level spectrum arising from a complex interplay between a density-dependent Zeeman splitting and spin and valley-split Landau levels. These observations, enabled by the high electronic quality of our samples, testify to the importance of interaction effects in the conduction band of monolayer MoS$_{2}$.
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Submitted 16 December, 2018; v1 submitted 17 June, 2018;
originally announced June 2018.
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Magnetotransport and lateral confinement in an InSe van der Waals Heterostructure
Authors:
Yongjin Lee,
Riccardo Pisoni,
Hiske Overweg,
Marius Eich,
Peter Rickhaus,
Amalia Patanè,
Zakhar R. Kudrynskyi,
Zakhar. D. Kovalyuk,
Roman Gorbachev,
Kenji Watanabe,
Takashi Taniguchi,
Thomas Ihn,
Klaus Ensslin
Abstract:
In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides (TMDCs), the considerable bandgap and high electron mobility can provide a potential optoelectronic application. Here we present low-temperature transport measureme…
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In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides (TMDCs), the considerable bandgap and high electron mobility can provide a potential optoelectronic application. Here we present low-temperature transport measurements on a few-layer InSe van der Waals heterostructure with graphene-gated contacts. For high magnetic fields, we observe magnetoresistance minima at even filling factors related to two-fold spin degeneracy. By electrostatic gating with negatively biased split gates, a one-dimensional channel is realized. Close to pinch-off, transport through the constriction is dominated by localized states with charging energies ranging from 2 to 5 meV. This work opens new possibility to explore the low-dimensional physics including quantum point contact and quantum dot.
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Submitted 28 May, 2018;
originally announced May 2018.
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Coupled quantum dots in bilayer graphene
Authors:
Marius Eich,
Riccardo Pisoni,
Alessia Pally,
Hiske Overweg,
Annika Kurzmann,
Yongjin Lee,
Peter Rickhaus,
Kenji Watanabe,
Takashi Taniguchi,
Klaus Ensslin,
Thomas Ihn
Abstract:
Electrostatic confinement of charge carriers in bilayer graphene provides a unique platform for carbon-based spin, charge or exchange qubits. By exploiting the possibility to induce a band gap with electrostatic gating, we form a versatile and widely tunable multi-quantum dot system. We demonstrate the formation of single, double and triple quantum dots that are free of any sign of disorder. In bi…
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Electrostatic confinement of charge carriers in bilayer graphene provides a unique platform for carbon-based spin, charge or exchange qubits. By exploiting the possibility to induce a band gap with electrostatic gating, we form a versatile and widely tunable multi-quantum dot system. We demonstrate the formation of single, double and triple quantum dots that are free of any sign of disorder. In bilayer graphene we have the possibility to form tunnel barriers using different mechanisms. We can exploit the ambipolar nature of bilayer graphene where pn-junctions form natural tunnel barriers. Alternatively, we can use gates to form tunnel barriers, where we can vary the tunnel coupling by more than two orders of magnitude tuning between a deeply Coulomb blockaded system and a Fabry-Pérot-like cavity. Demonstrating such tunability is an important step towards graphene-based quantum computation.
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Submitted 6 August, 2018; v1 submitted 8 May, 2018;
originally announced May 2018.
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Spin and Valley States in Gate-defined Bilayer Graphene Quantum Dots
Authors:
Marius Eich,
František Herman,
Riccardo Pisoni,
Hiske Overweg,
Annika Kurzmann,
Yongjin Lee,
Peter Rickhaus,
Kenji Watanabe,
Takashi Taniguchi,
Manfred Sigrist,
Thomas Ihn,
Klaus Ensslin
Abstract:
In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and connected to the leads via p-n junctions. Single electron and hole occupancy is realized and charge carriers $n = 1, 2,\dots 50$ can be filled successively into…
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In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and connected to the leads via p-n junctions. Single electron and hole occupancy is realized and charge carriers $n = 1, 2,\dots 50$ can be filled successively into the quantum system with charging energies exceeding $10 \ \mathrm{meV}$. For the lowest quantum states, we can clearly observe valley and Zeeman splittings with a spin g-factor of $g_{s}\approx 2$. In the low field-limit, the valley splitting depends linearly on the perpendicular magnetic field and is in qualitative agreement with calculations.
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Submitted 7 August, 2018; v1 submitted 7 March, 2018;
originally announced March 2018.
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Transport through a network of topological states in twisted bilayer graphene
Authors:
Peter Rickhaus,
John Wallbank,
Sergey Slizovskiy,
Riccardo Pisoni,
Hiske Overweg,
Yongjin Lee,
Marius Eich,
Ming-Hao Liu,
K. Watanabe,
T. Taniguchi,
Vladimir Fal'ko,
Thomas Ihn,
Klaus Ensslin
Abstract:
We explore a network of electronic quantum valley Hall (QVH) states in the moiré crystal of minimally twisted bilayer graphene. In our transport measurements we observe Fabry-Pérot and Aharanov-Bohm oscillations which are robust in magnetic fields ranging from 0 to 8T, in strong contrast to more conventional 2D systems where trajectories in the bulk are bent by the Lorentz force. This persistence…
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We explore a network of electronic quantum valley Hall (QVH) states in the moiré crystal of minimally twisted bilayer graphene. In our transport measurements we observe Fabry-Pérot and Aharanov-Bohm oscillations which are robust in magnetic fields ranging from 0 to 8T, in strong contrast to more conventional 2D systems where trajectories in the bulk are bent by the Lorentz force. This persistence in magnetic field and the linear spacing in density indicate that charge carriers in the bulk flow in topologically protected, one dimensional channels. With this work we demonstrate coherent electronic transport in a lattice of topologically protected states.
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Submitted 24 October, 2018; v1 submitted 20 February, 2018;
originally announced February 2018.
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Gate-Tunable Quantum Dot in a High Quality Single Layer MoS$_{\mathrm{2}}$ Van der Waals Heterostructure
Authors:
Riccardo Pisoni,
Zijin Lei,
Patrick Back,
Marius Eich,
Hiske Overweg,
Yongjin Lee,
Kenji Watanabe,
Takashi Taniguchi,
Thomas Ihn,
Klaus Ensslin
Abstract:
We have fabricated an encapsulated monolayer MoS$_{\mathrm{2}}$ device with metallic ohmic contacts through a pre-patterned hBN layer. In the bulk, we observe an electron mobility as high as 3000 cm$^{\mathrm{2}}$/Vs at a density of 7 $\times$ 10$^{\mathrm{12}}$ cm$^{\mathrm{-2}}$ at a temperature of 1.7 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 3.3 T. By realizing a sin…
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We have fabricated an encapsulated monolayer MoS$_{\mathrm{2}}$ device with metallic ohmic contacts through a pre-patterned hBN layer. In the bulk, we observe an electron mobility as high as 3000 cm$^{\mathrm{2}}$/Vs at a density of 7 $\times$ 10$^{\mathrm{12}}$ cm$^{\mathrm{-2}}$ at a temperature of 1.7 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 3.3 T. By realizing a single quantum dot gate structure on top of the hBN we are able to confine electrons in MoS$_{\mathrm{2}}$ and observe the Coulomb blockade effect. By tuning the middle gate voltage we reach a double dot regime where we observe the standard honeycomb pattern in the charge stability diagram.
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Submitted 21 March, 2018; v1 submitted 1 January, 2018;
originally announced January 2018.
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Edge channel confinement in a bilayer graphene $n$-$p$-$n$ quantum dot
Authors:
Hiske Overweg,
Peter Rickhaus,
Marius Eich,
Yongjin Lee,
Riccardo Pisoni,
Kenji Watanabe,
Takashi Taniguchi,
Thomas Ihn,
Klaus Ensslin
Abstract:
We combine electrostatic and magnetic confinement to define a quantum dot in bilayer graphene. The employed geometry couples $n$-doped reservoirs to a $p$-doped dot. At magnetic field values around $B = 2~$T, Coulomb blockade is observed. This demonstrates that the coupling of the co-propagating modes at the $p$-$n$ interface is weak enough to form a tunnel barrier, facilitating transport of singl…
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We combine electrostatic and magnetic confinement to define a quantum dot in bilayer graphene. The employed geometry couples $n$-doped reservoirs to a $p$-doped dot. At magnetic field values around $B = 2~$T, Coulomb blockade is observed. This demonstrates that the coupling of the co-propagating modes at the $p$-$n$ interface is weak enough to form a tunnel barrier, facilitating transport of single charge carriers onto the dot. This result may be of use for quantum Hall interferometry experiments.
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Submitted 17 January, 2018; v1 submitted 4 September, 2017;
originally announced September 2017.
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Electrostatically induced quantum point contact in bilayer graphene
Authors:
Hiske Overweg,
Hannah Eggimann,
Xi Chen,
Sergey Slizovskiy,
Marius Eich,
Riccardo Pisoni,
Yongjin Lee,
Peter Rickhaus,
Kenji Watanabe,
Takashi Taniguchi,
Vladimir Fal'ko,
Thomas Ihn,
Klaus Ensslin
Abstract:
We report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as $R \sim 10~$G$Ω$. This exceeds previously reported values of $R =~$10 - 100 k$Ω$.\cite{Zou2010,Yan2010,Zhu2016a} We attribute this improvement to the use of a graphite back gate. We realize two split gate devices which define an electroni…
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We report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as $R \sim 10~$G$Ω$. This exceeds previously reported values of $R =~$10 - 100 k$Ω$.\cite{Zou2010,Yan2010,Zhu2016a} We attribute this improvement to the use of a graphite back gate. We realize two split gate devices which define an electronic channel on the scale of the Fermi-wavelength. A channel gate covering the gap between the split gates varies the charge carrier density in the channel. We observe device-dependent conductance quantization of $ΔG = 2~e^2/h$ and $ΔG = 4~e^2/h$. In quantizing magnetic fields normal to the sample plane, we recover the four- fold Landau level degeneracy of bilayer graphene. Unexpected mode crossings appear at the crossover between zero magnetic field and the quantum Hall regime.
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Submitted 16 January, 2018; v1 submitted 28 July, 2017;
originally announced July 2017.
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Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS$_2$ van der Waals Heterostructures
Authors:
Riccardo Pisoni,
Yongjin Lee,
Hiske Overweg,
Marius Eich,
Pauline Simonet,
Kenji Watanabe,
Takashi Taniguchi,
Roman Gorbachev,
Thomas Ihn,
Klaus Ensslin
Abstract:
We have realized encapsulated trilayer MoS$_2$ devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000~cm$^{2}$/(V s) at a density of 3 $\times$ 10$^{12}$~cm$^{-2}$ at a temperature of 1.9~K. Shubnikov--de Haas oscillations start at magnetic fields as low as 0.9~T. The observed 3-fold Landau level degeneracy can be understood based on the valley Zeeman ef…
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We have realized encapsulated trilayer MoS$_2$ devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000~cm$^{2}$/(V s) at a density of 3 $\times$ 10$^{12}$~cm$^{-2}$ at a temperature of 1.9~K. Shubnikov--de Haas oscillations start at magnetic fields as low as 0.9~T. The observed 3-fold Landau level degeneracy can be understood based on the valley Zeeman effect. Negatively biased split gate electrodes allow us to form a channel that can be completely pinched off for sufficiently large gate voltages. The measured conductance displays plateau-like features.
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Submitted 21 July, 2017; v1 submitted 30 January, 2017;
originally announced January 2017.
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Oscillating magnetoresistance in graphene p-n junctions at intermediate magnetic fields
Authors:
Hiske Overweg,
Hannah Eggimann,
Ming-Hao Liu,
Anastasia Varlet,
Marius Eich,
Pauline Simonet,
Yongjin Lee,
Kenji Watanabe,
Takashi Taniguchi,
Klaus Richter,
Vladimir I. Fal'ko,
Klaus Ensslin,
Thomas Ihn
Abstract:
We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where standard Shubnikov-de Haas oscillations are no longer discernible. The oscillatory magnetoresistance can be reproduced by tight-binding simulations. We attribute…
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We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where standard Shubnikov-de Haas oscillations are no longer discernible. The oscillatory magnetoresistance can be reproduced by tight-binding simulations. We attribute this phenomenon to the modulated densities of states in the n- and p- regions.
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Submitted 18 May, 2017; v1 submitted 22 December, 2016;
originally announced December 2016.
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Probing the magnetic moment of FePt micromagnets prepared by Focused Ion Beam milling
Authors:
H. C. Overweg,
A. M. J. den Haan,
H. J. Eerkens,
P. F. A. Alkemade,
A. L. La Rooij,
R. J. C. Spreeuw,
L. Bossoni,
T. H. Oosterkamp
Abstract:
We investigate the degradation of the magnetic moment of a 300 nm thick FePt film induced by Focused Ion Beam (FIB) milling. A $1~μ\mathrm{m} \times 8~μ\mathrm{m}$ rod is milled out of a film by a FIB process and is attached to a cantilever by electron beam induced deposition. Its magnetic moment is determined by frequency-shift cantilever magnetometry. We find that the magnetic moment of the rod…
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We investigate the degradation of the magnetic moment of a 300 nm thick FePt film induced by Focused Ion Beam (FIB) milling. A $1~μ\mathrm{m} \times 8~μ\mathrm{m}$ rod is milled out of a film by a FIB process and is attached to a cantilever by electron beam induced deposition. Its magnetic moment is determined by frequency-shift cantilever magnetometry. We find that the magnetic moment of the rod is $μ= 1.1 \pm 0.1 \times 10 ^{-12} \mathrm{Am}^2$, which implies that 70% of the magnetic moment is preserved during the FIB milling process. This result has important implications for atom trapping and magnetic resonance force microscopy (MRFM), that are addressed in this paper.
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Submitted 23 August, 2015; v1 submitted 27 April, 2015;
originally announced April 2015.
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Nonequilibrium transport in density-modulated phases of the second Landau level
Authors:
S. Baer,
C. Rössler,
S. Hennel,
H. C. Overweg,
T. Ihn,
K. Ensslin,
C. Reichl,
W. Wegscheider
Abstract:
We investigate non-equilibrium transport in the reentrant integer quantum Hall phases of the second Landau level. At high currents, we observe a transition from the reentrant integer quantum Hall phases to classical Hall-conduction. Surprisingly, this transition is markedly different for the hole- and electron sides of each spin-branch. While the hole bubble phases exhibit a sharp transition to an…
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We investigate non-equilibrium transport in the reentrant integer quantum Hall phases of the second Landau level. At high currents, we observe a transition from the reentrant integer quantum Hall phases to classical Hall-conduction. Surprisingly, this transition is markedly different for the hole- and electron sides of each spin-branch. While the hole bubble phases exhibit a sharp transition to an isotropic compressible phase, the transition for the electron side occurs via an intermediate phase. This might indicate a more complex structure of the bubble phases than currently anticipated, or a breaking of the particle-hole symmetry. Such a symmetry breaking in the second Landau level might also have consequences for the physics at filling factor $ν$=5/2.
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Submitted 27 June, 2015; v1 submitted 15 December, 2014;
originally announced December 2014.
