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Imaging of sub-$μ$A currents in bilayer graphene using a scanning diamond magnetometer
Authors:
M. L. Palm,
W. S. Huxter,
P. Welter,
S. Ernst,
P. J. Scheidegger,
S. Diesch,
K. Chang,
P. Rickhaus,
T. Taniguchi,
K. Wantanabe,
K. Ensslin,
C. L. Degen
Abstract:
Nanoscale electronic transport gives rise to a number of intriguing physical phenomena that are accompanied by distinct spatial patterns of current flow. Here, we report on sensitive magnetic imaging of two-dimensional current distributions in bilayer graphene at room temperature. By combining dynamical modulation of the source-drain current with ac quantum sensing of a nitrogen-vacancy center in…
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Nanoscale electronic transport gives rise to a number of intriguing physical phenomena that are accompanied by distinct spatial patterns of current flow. Here, we report on sensitive magnetic imaging of two-dimensional current distributions in bilayer graphene at room temperature. By combining dynamical modulation of the source-drain current with ac quantum sensing of a nitrogen-vacancy center in a diamond probe, we acquire magnetic field and current density maps with excellent sensitivities of 4.6 nT and 20 nA/$μ$m, respectively. The spatial resolution is 50-100 nm. We further introduce a set of methods for increasing the technique's dynamic range and for mitigating undesired back-action of magnetometry operation on the electronic transport. Current density maps reveal local variations in the flow pattern and global tuning of current flow via the back-gate potential. No signatures of hydrodynamic transport are observed. Our experiments demonstrate the feasibility for imaging subtle features of nanoscale transport in two-dimensional materials and conductors.
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Submitted 18 January, 2022;
originally announced January 2022.
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A liquid nitrogen cooled superconducting transition edge sensor with ultra-high responsivity and GHz operation speeds
Authors:
Paul Seifert,
Jose Ramon Duran Retamal,
Rafael Luque Merino,
Hanan Herzig Sheinfux,
John N. Moore,
Mohammed Ali Aamir,
Takashi Taniguchi,
Kenji Wantanabe,
Kazuo Kadowaki,
Massimo Artiglia,
Marco Romagnoli,
Dmitri K. Efetov
Abstract:
Photodetectors based on nano-structured superconducting thin films are currently some of the most sensitive quantum sensors and are key enabling technologies in such broad areas as quantum information, quantum computation and radio-astronomy. However, their broader use is held back by the low operation temperatures which require expensive cryostats. Here, we demonstrate a nitrogen cooled supercond…
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Photodetectors based on nano-structured superconducting thin films are currently some of the most sensitive quantum sensors and are key enabling technologies in such broad areas as quantum information, quantum computation and radio-astronomy. However, their broader use is held back by the low operation temperatures which require expensive cryostats. Here, we demonstrate a nitrogen cooled superconducting transition edge sensor, which shows orders of magnitude improved performance characteristics of any superconducting detector operated above 77K, with a responsivity of 9.61x10^4 V/W, noise equivalent power of 15.9 fW/Hz-1/2 and operation speeds up to GHz frequencies. It is based on van der Waals heterostructures of the high temperature superconductor Bi2Sr2CaCu2O8, which are shaped into nano-wires with ultra-small form factor. To highlight the versatility of the detector we demonstrate its fabrication and operation on a telecom grade SiN waveguide chip. Our detector significantly relaxes the demands of practical applications of superconducting detectors and displays its huge potential for photonics based quantum applications.
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Submitted 4 June, 2020;
originally announced June 2020.
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Correlated electron-hole State in Twisted Double Bilayer Graphene
Authors:
Peter Rickhaus,
Folkert de Vries,
Jihang Zhu,
Elías Portolés,
Giulia Zheng,
Michele Masseroni,
Annika Kurzmann,
Takashi Taniguchi,
Kenji Wantanabe,
Allan H. MacDonald,
Thomas Ihn,
Klaus Ensslin
Abstract:
When twisted to angles near 1°, graphene multilayers provide a new window on electron correlation physics by hosting gate-tuneable strongly-correlated states, including insulators, superconductors, and unusual magnets. Here we report the discovery of a new member of the family, density-wave states, in double bilayer graphene twisted to 2.37°. At this angle the moiré states retain much of their iso…
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When twisted to angles near 1°, graphene multilayers provide a new window on electron correlation physics by hosting gate-tuneable strongly-correlated states, including insulators, superconductors, and unusual magnets. Here we report the discovery of a new member of the family, density-wave states, in double bilayer graphene twisted to 2.37°. At this angle the moiré states retain much of their isolated bilayer character, allowing their bilayer projections to be separately controlled by gates. We use this property to generate an energetic overlap between narrow isolated electron and hole bands with good nesting properties. Our measurements reveal the formation of ordered states with reconstructed Fermi surfaces, consistent with density-wave states, for equal electron and hole densities. These states can be tuned without introducing chemical dopants, thus opening the door to a new class of fundamental studies of density-waves and their interplay with superconductivity and other types of order, a central issue in quantum matter physics.
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Submitted 23 September, 2021; v1 submitted 11 May, 2020;
originally announced May 2020.
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Tunable Valley Splitting due to Topological Orbital Magnetic Moment in Bilayer Graphene Quantum Point Contacts
Authors:
Yongjin Lee,
Angelika Knothe,
Hiske Overweg,
Marius Eich,
Carolin Gold,
Annika Kurzmann,
Veronika Klasovika,
Takashi Taniguchi,
Kenji Wantanabe,
Vladimir Fal'ko,
Thomas Ihn,
Klaus Ensslin,
Peter Rickhaus
Abstract:
In multivalley semiconductors, the valley degree of freedom can be potentially used to store, manipulate and read quantum information, but its control remains challenging. The valleys in bilayer graphene can be addressed by a perpendicular magnetic field which couples by the valley g-factor. However, control over the valley g-factor has not been demonstrated yet. We experimentally determine the en…
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In multivalley semiconductors, the valley degree of freedom can be potentially used to store, manipulate and read quantum information, but its control remains challenging. The valleys in bilayer graphene can be addressed by a perpendicular magnetic field which couples by the valley g-factor. However, control over the valley g-factor has not been demonstrated yet. We experimentally determine the energy spectrum of a quantum point contact realized by a suitable gate geometry in bilayer graphene. Using finite bias spectroscopy we measure the energy scales arising from the lateral confinement as well as the Zeeman splitting and find a spin g-factor of 2. The valley g-factor can be tuned by a factor of 3 using vertical electric fields, reaching values between 40 and 120. The results are quantitatively explained by a calculation considering topological magnetic moment and its dependence on confinement and the vertical displacement field.
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Submitted 5 March, 2020; v1 submitted 14 November, 2019;
originally announced November 2019.
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Gap Opening in Twisted Double Bilayer Graphene by Crystal fields
Authors:
Peter Rickhaus,
Giulia Zheng,
Jose L. Lado,
Yongjin Lee,
Annika Kurzmann,
Marius Eich,
Riccardo Pisoni,
Chuyao Tong,
Rebekka Garreis,
Carolin Gold,
Michele Masseroni,
Takashi Taniguchi,
Kenji Wantanabe,
Thomas Ihn,
and Klaus Ensslin
Abstract:
Crystal fields occur due to a potential difference between chemically different atomic species. In Van-der-Waals heterostructures such fields are naturally present perpendicular to the planes. It has been realized recently that twisted graphene multilayers provide powerful playgrounds to engineer electronic properties by the number of layers, the twist angle, applied electric biases, electronic in…
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Crystal fields occur due to a potential difference between chemically different atomic species. In Van-der-Waals heterostructures such fields are naturally present perpendicular to the planes. It has been realized recently that twisted graphene multilayers provide powerful playgrounds to engineer electronic properties by the number of layers, the twist angle, applied electric biases, electronic interactions and elastic relaxations, but crystal fields have not received the attention they deserve. Here we show that the bandstructure of large-angle twisted double bilayer graphene is strongly modified by crystal fields. In particular, we experimentally demonstrate that twisted double bilayer graphene, encapsulated between hBN layers, exhibits an intrinsic bandgap. By the application of an external field, the gaps in the individual bilayers can be closed, allowing to determine the crystal fields. We find that crystal fields point from the outer to the inner layers with strengths in the bottom (top) bilayer of -0.13 V/nm (0.12 V/nm). We show both by means of first principles calculations and low energy models that crystal fields open a band gap in the groundstate. Our results put forward a physical scenario in which a crystal field effect in carbon substantially impacts the low energy properties of twisted double bilayer graphene, suggesting that such contributions must be taken into account in other regimes to faithfully predict the electronic properties of twisted graphene multilayers.
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Submitted 4 November, 2019; v1 submitted 23 October, 2019;
originally announced October 2019.
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The Electronic Thickness of Graphene
Authors:
Peter Rickhaus,
Ming-Hao Liu,
Marcin Kurpas,
Annika Kurzmann,
Yongjin Lee,
Hiske Overweg,
Marius Eich,
Riccardo Pisoni,
Takashi Tamaguchi,
Kenji Wantanabe,
Klaus Richter,
Klaus Ensslin,
Thomas Ihn
Abstract:
The van-der-Waals stacking technique enables the fabrication of heterostructures, where two conducting layers are atomically close. In this case, the finite layer thickness matters for the interlayer electrostatic coupling. Here we investigate the electrostatic coupling of two graphene layers, twisted by 22 degrees such that the layers are decoupled by the huge momentum mismatch between the K and…
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The van-der-Waals stacking technique enables the fabrication of heterostructures, where two conducting layers are atomically close. In this case, the finite layer thickness matters for the interlayer electrostatic coupling. Here we investigate the electrostatic coupling of two graphene layers, twisted by 22 degrees such that the layers are decoupled by the huge momentum mismatch between the K and K' points of the two layers. We observe a splitting of the zero-density lines of the two layers with increasing interlayer energy difference. This splitting is given by the ratio of single-layer quantum capacitance over interlayer capacitance C and is therefore suited to extract C. We explain the large observed value of C by considering the finite dielectric thickness d of each graphene layer and determine d=2.6 Angstrom. In a second experiment we map out the entire density range with a Fabry-Pérot resonator. We can precisely measure the Fermi-wavelength in each layer, showing that the layers are decoupled. We find that the Fermi wavelength exceeds 600nm at the lowest densities and can differ by an order of magnitude between the upper and lower layer. These findings are reproduced using tight-binding calculations.
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Submitted 1 July, 2019;
originally announced July 2019.
