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Ferroelectric AlBN Films by Molecular Beam Epitaxy
Authors:
Chandrashekhar Savant,
Ved Gund,
Kazuki Nomoto,
Takuya Maeda,
Shubham Jadhav,
Joongwon Lee,
Madhav Ramesh,
Eungkyun Kim,
Thai-Son Nguyen,
Yu-Hsin Chen,
Joseph Casamento,
Farhan Rana,
Amit Lal,
Huili,
Xing,
Debdeep Jena
Abstract:
We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode Nb2N. While a control AlN thin film exhibits standard capacitive behavior, distinct ferroelectric switching is observed in the AlBN films with increasing Boron mole fraction. The measured remnant polarization Pr of 15 uC/cm2 and coercive field Ec of 1.45 MV/cm in t…
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We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode Nb2N. While a control AlN thin film exhibits standard capacitive behavior, distinct ferroelectric switching is observed in the AlBN films with increasing Boron mole fraction. The measured remnant polarization Pr of 15 uC/cm2 and coercive field Ec of 1.45 MV/cm in these films are smaller than those recently reported on films deposited by sputtering, due to incomplete wake-up, limited by current leakage. Because AlBN preserves the ultrawide energy bandgap of AlN compared to other nitride hi-K dielectrics and ferroelectrics, and it can be epitaxially integrated with GaN and AlN semiconductors, its development will enable several opportunities for unique electronic, photonic, and memory devices.
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Submitted 17 July, 2024; v1 submitted 12 July, 2024;
originally announced July 2024.
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Characterising resource management performance in Kubernetes
Authors:
Víctor Medel,
Rafael Tolosana-Calasanz,
José Ángel Bañares,
Unai Arronategui,
Omer F. Rana
Abstract:
A key challenge for supporting elastic behaviour in cloud systems is to achieve a good performance in automated (de-)provisioning and scheduling of computing resources. One of the key aspects that can be significant is the overheads associated with deploying, terminating and maintaining resources. Therefore, due to their lower start up and termination overhead, containers are rapidly replacing Vir…
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A key challenge for supporting elastic behaviour in cloud systems is to achieve a good performance in automated (de-)provisioning and scheduling of computing resources. One of the key aspects that can be significant is the overheads associated with deploying, terminating and maintaining resources. Therefore, due to their lower start up and termination overhead, containers are rapidly replacing Virtual Machines (VMs) in many cloud deployments, as the computation instance of choice. In this paper, we analyse the performance of Kubernetes achieved through a Petri net-based performance model. Kubernetes is a container management system for a distributed cluster environment. Our model can be characterised using data from a Kubernetes deployment, and can be exploited for supporting capacity planning and designing Kubernetes-based elastic applications.
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Submitted 30 January, 2024;
originally announced January 2024.
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Optical Dipole Structure and Orientation of GaN Defect Single-Photon Emitters
Authors:
Yifei Geng,
Debdeep Jena,
Gregory D. Fuchs,
Warren R. Zipfel,
Farhan Rana
Abstract:
GaN has recently been shown to host bright, photostable, defect single photon emitters in the 600-700 nm wavelength range that are promising for quantum applications. The nature and origin of these defect emitters remain elusive. In this work, we study the optical dipole structures and orientations of these defect emitters using the defocused imaging technique. In this technique, the far-field rad…
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GaN has recently been shown to host bright, photostable, defect single photon emitters in the 600-700 nm wavelength range that are promising for quantum applications. The nature and origin of these defect emitters remain elusive. In this work, we study the optical dipole structures and orientations of these defect emitters using the defocused imaging technique. In this technique, the far-field radiation pattern of an emitter in the Fourier plane is imaged to obtain information about the structure of the optical dipole moment and its orientation in 3D. Our experimental results, backed by numerical simulations, show that these defect emitters in GaN exhibit a single dipole moment that is oriented almost perpendicular to the wurtzite crystal c-axis. Data collected from many different emitters shows that the angular orientation of the dipole moment in the plane perpendicular to the c-axis exhibits a distribution that shows peaks centered at the angles corresponding to the nearest Ga-N bonds and also at the angles corresponding to the nearest Ga-Ga (or N-N) directions. Moreover, the in-plane angular distribution shows little difference among defect emitters with different emission wavelengths in the 600-700 nm range. Our work sheds light on the nature and origin of these GaN defect emitters.
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Submitted 29 June, 2023;
originally announced June 2023.
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Room temperature optically detected magnetic resonance of single spins in GaN
Authors:
Jialun Luo,
Yifei Geng,
Farhan Rana,
Gregory D. Fuchs
Abstract:
Optically detected magnetic resonance (ODMR) is an efficient mechanism to readout the spin of solid-state color centers at room temperature, thus enabling spin-based quantum sensors of magnetic field, electric field, and temperature with high sensitivity and broad commercial applicability. The mechanism of room temperature ODMR is based on spin-dependent relaxation between the optically excited st…
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Optically detected magnetic resonance (ODMR) is an efficient mechanism to readout the spin of solid-state color centers at room temperature, thus enabling spin-based quantum sensors of magnetic field, electric field, and temperature with high sensitivity and broad commercial applicability. The mechanism of room temperature ODMR is based on spin-dependent relaxation between the optically excited states to the ground states, and thus it is an intrinsic property of a defect center. In this work we report that two distinct defect types exist in GaN based on their ODMR signatures. One group has small negative ODMR based on a spin in a metastable state. The second group has large (up to $\sim$30\%) positive ODMR contrast based on ground-state spin. Because GaN is a mature semiconductor with well-developed electronic technologies already developed, this defect platform is promising for integrated quantum sensing applications.
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Submitted 21 June, 2023;
originally announced June 2023.
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Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics
Authors:
Jimy Encomendero,
Vladimir Protasenko,
Farhan Rana,
Debdeep Jena,
Huili Grace Xing
Abstract:
The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between fixed polarization charges and mobile free carriers leads to asymmetric transport characteristics. Here, we investigate the possibility of using degenerately d…
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The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between fixed polarization charges and mobile free carriers leads to asymmetric transport characteristics. Here, we investigate the possibility of using degenerately doped contact layers to screen the built-in polarization fields and recover symmetric resonant injection. Thanks to a high doping density, negative differential conductance is observed under both bias polarities of GaN/AlN resonant tunneling diodes (RTDs). Moreover, our analytical model reveals a lower bound for the minimum resonant-tunneling voltage achieved via uniform doping, owing to the dopant solubility limit. Charge storage dynamics is also studied by impedance measurements, showing that at close-to-equilibrium conditions, polar RTDs behave effectively as parallel-plate capacitors. These mechanisms are completely reproduced by our analytical model, providing a theoretical framework useful in the design and analysis of polar resonant-tunneling devices.
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Submitted 15 March, 2023;
originally announced March 2023.
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Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures
Authors:
Jimy Encomendero,
Vladimir Protasenko,
Berardi Sensale-Rodriguez,
Patrick Fay,
Farhan Rana,
Debdeep Jena,
Huili Grace Xing
Abstract:
The phenomenon of resonant tunneling transport through polar double-barrier heterostructures is systematically investigated using a combined experimental and theoretical approach. On the experimental side, GaN/AlN RTDs are grown by MBE. In-situ electron diffraction is employed to monitor the number of monolayers incorporated into each tunneling barrier. Using this precise epitaxial control at the…
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The phenomenon of resonant tunneling transport through polar double-barrier heterostructures is systematically investigated using a combined experimental and theoretical approach. On the experimental side, GaN/AlN RTDs are grown by MBE. In-situ electron diffraction is employed to monitor the number of monolayers incorporated into each tunneling barrier. Using this precise epitaxial control at the monolayer level, we demonstrate exponential modulation of the resonant tunneling current as a function of barrier thickness. Both the peak voltage and characteristic threshold bias exhibit a dependence on barrier thickness as a result of the intense electric fields present in the polar heterostructures. To get further insight into the asymmetric tunneling injection, we present an analytical theory for tunneling transport across polar heterostructures. A general expression for the resonant tunneling current with contributions from coherent and sequential tunneling processes is introduced. After applying this theory to the case of GaN/AlN RTDs, their experimental current-voltage characteristics are reproduced over both bias polarities, with tunneling currents spanning several orders of magnitude. This agreement allows us to elucidate the role played by the internal polarization fields on the magnitude of the tunneling current and broadening of the resonant line shape. Under reverse bias, we identify new tunneling features originating from highly attenuated resonant tunneling phenomena, which are completely captured by our model. Our analytical model, provides a simple expression which reveals the connection between the polar RTD design parameters and its current-voltage characteristics. This new theory paves the way for the design of polar resonant tunneling devices exhibiting efficient resonant current injection and enhanced tunneling dynamics, as required in various practical applications.
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Submitted 15 March, 2023;
originally announced March 2023.
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Decoherence by Optical Phonons in GaN Defect Single-Photon Emitters
Authors:
Yifei Geng,
Jialun Luo,
Len van Deurzen,
Huili,
Xing,
Debdeep Jena,
Gregory David Fuchs,
Farhan Rana
Abstract:
In most single-photon defect emitters, such as those in SiC and diamond, interaction with low-energy acoustic phonons determines the temperature dependence of the decoherence rate and the resulting broadening of the ZPL with the temperature obeys a power law. GaN hosts bright and stable single-photon emitters in the 600 nm to 700 nm wavelength range with strong ZPLs even at room temperature. In th…
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In most single-photon defect emitters, such as those in SiC and diamond, interaction with low-energy acoustic phonons determines the temperature dependence of the decoherence rate and the resulting broadening of the ZPL with the temperature obeys a power law. GaN hosts bright and stable single-photon emitters in the 600 nm to 700 nm wavelength range with strong ZPLs even at room temperature. In this work, we study the temperature dependence of the ZPL spectra of GaN SPEs integrated with solid immersion lenses with the goal of understanding the relevant decoherence mechanisms. At temperatures below ~50 K, the ZPL lineshape is found to be Gaussian and the ZPL linewidth is temperature independent and dominated by spectral diffusion. Above ~50 K, the linewidth increases monotonically with the temperature and the lineshape evolves into a Lorentzian. Quite remarkably, the temperature dependence of the linewidth does not follow a power law. We propose a model in which decoherence caused by absorption/emission of optical phonons in an elastic Raman process determines the temperature dependence of the lineshape and the linewidth. Our model explains the temperature dependence of the ZPL linewidth and lineshape in the entire 10 K to 270 K temperature range explored in this work. The ~19 meV optical phonon energy extracted by fitting the model to the data matches remarkably well the ~18 meV zone center energy of the lowest optical phonon band (E2(low)) in GaN. Our work sheds light on the mechanisms responsible for linewidth broadening in GaN SPEs. Since a low energy optical phonon band (E2(low)) is a feature of most group III-V nitrides with a wurtzite crystal structure, including hBN and AlN, we expect our proposed mechanism to play an important role in defect emitters in these materials as well.
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Submitted 29 January, 2023; v1 submitted 25 June, 2022;
originally announced June 2022.
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Antiferromagnetic Spin Orientation and Magnetic Domain Structure in Epitaxially Grown MnN Studied using Optical Second Harmonic Generation
Authors:
Joongwon Lee,
Zexuan Zhang,
Huili Xing,
Debdeep Jena,
Farhan Rana
Abstract:
MnN is a centrosymmetric collinear antiferromagnet belonging to the transition metal nitride family with a high Neel temperature, a low anisotropy field, and a large magnetic moment per Mn atom. Despite several recent experimental and theoretical studies, the spin symmetry (magnetic point group) and magnetic domain structure of the material remain unknown. In this work, we use optical second harmo…
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MnN is a centrosymmetric collinear antiferromagnet belonging to the transition metal nitride family with a high Neel temperature, a low anisotropy field, and a large magnetic moment per Mn atom. Despite several recent experimental and theoretical studies, the spin symmetry (magnetic point group) and magnetic domain structure of the material remain unknown. In this work, we use optical second harmonic generation (SHG) to study the magnetic structure of thin epitaxially-grown single-crystal (001) MnN films. Our work shows that spin moments in MnN are tilted away from the [001] direction and the components of the spin moments in the (001) plane are aligned along one of the two possible in-plane symmetry axes ([100] or [110]) resulting in a magnetic point group symmetry of 2/m1'. Our work rules out magnetic point group symmetries 4/mmm1' and mmm1' that have been previously discussed in the literature. Four different spin domains consistent with the 2/m1' magnetic point group symmetry are possible in MnN. A statistical model based on the observed variations in the polarization-dependent intensity of the second harmonic signal collected over large sample areas puts an upper bound of 0.65 microns on the mean domain size. Our results show that SHG can be used to probe the magnetic order in metallic antiferromagnets. This work is expected to contribute to the recent efforts in using antiferromagnets for spintronic applications.
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Submitted 25 June, 2022; v1 submitted 25 April, 2022;
originally announced April 2022.
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Disorder of Excitons and Trions in Monolayer MoSe2
Authors:
Jue Wang,
Christina Manolatou,
Yusong Bai,
James Hone,
Farhan Rana,
Xiaoyang Zhu
Abstract:
The optical spectra of transition metal dichalcogenide (TMDC) monolayers are dominated by excitons and trions. Here we establish the dependences of these optical transitions on disorder from hyperspectral imaging of h-BN encapsulated monolayer MoSe2. While both exciton and trion energies vary spatially, these two quantities are almost perfectly correlated, with spatial variation in the trion bindi…
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The optical spectra of transition metal dichalcogenide (TMDC) monolayers are dominated by excitons and trions. Here we establish the dependences of these optical transitions on disorder from hyperspectral imaging of h-BN encapsulated monolayer MoSe2. While both exciton and trion energies vary spatially, these two quantities are almost perfectly correlated, with spatial variation in the trion binding energy of only ~0.18 meV. In contrast, variation in the energy splitting between the two lowest energy exciton states is one order of magnitude larger at ~1.7 meV. Statistical analysis and theoretical modeling reveal that disorder results from dielectric and bandgap fluctuations, not electrostatic fluctuations. Our results shed light on disorder in high quality TMDC monolayers, its impact on optical transitions, and the many-body nature of excitons and trions.
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Submitted 21 November, 2021; v1 submitted 18 November, 2021;
originally announced November 2021.
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Ultrafast Dynamics of Gallium Vacancy Charge States in $β$-Ga$_2$O$_3$
Authors:
Arjan Singh,
Okan Koksal,
Nicholas Tanen,
Jonathan McCandless,
Debdeep Jena,
Huili,
Xing,
Hartwin Peelaers,
Farhan Rana
Abstract:
Point defects in crystalline materials often occur in multiple charge states. Although many experimental methods to study and explore point defects are available, techniques to explore the non-equilibrium dynamics of the charge states of these defects at ultrafast (sub-nanosecond) time scales have not been discussed before. We present results from ultrafast optical-pump supercontinuum-probe spectr…
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Point defects in crystalline materials often occur in multiple charge states. Although many experimental methods to study and explore point defects are available, techniques to explore the non-equilibrium dynamics of the charge states of these defects at ultrafast (sub-nanosecond) time scales have not been discussed before. We present results from ultrafast optical-pump supercontinuum-probe spectroscopy measurements on $β$-Ga$_2$O$_3$. The study of point defects in $β$-Ga$_2$O$_3$ is essential for its establishment as a material platform for high-power electronics and deep-UV optoelectronics. Use of a supercontinuum probe allows us to obtain the time-resolved absorption spectra of material defects under non-equilibrium conditions with picosecond time resolution. The probe absorption spectra shows defect absorption peaks at two energies, $\sim$2.2 eV and $\sim$1.63 eV, within the 1.3-2.5 eV probe energy bandwidth. The strength of the absorption associated with each peak is time-dependent and the spectral weight shifts from the lower energy peak to the higher energy peak with pump-probe delay. Further, maximum defect absorption is seen for probe polarized along the crystal c-axis. The time-dependent probe absorption spectra and the observed dynamics for all probe wavelengths at all pump-probe delays can be fit with a set of rate equations for a single multi-level defect. Based on first-principles calculations within hybrid density functional theory we attribute the observed absorption features to optical transitions from the valence band to different charge states of Gallium vacancies. Our results demonstrate that broadband ultrafast supercontinuum spectroscopy can be a useful tool to explore charge states of defects and defect dynamics in semiconductors.
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Submitted 8 February, 2021;
originally announced February 2021.
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The Structure and Dispersion of Exciton-Trion-Polaritons in Two-Dimensional Materials: Experiments and Theory
Authors:
Okan Koksal,
Minwoo Jung,
Christina Manolatou,
A. Nick Vamivakas,
Gennady Shvets,
Farhan Rana
Abstract:
The nature of trions and their interaction with light has remained a puzzle. The composition and dispersion of polaritons involving trions provide insights into this puzzle. Trions and excitons in doped two-dimensional (2D) materials are not independent excitations but are strongly coupled as a result of Coulomb interactions. When excitons in doped 2D materials are also strongly coupled with light…
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The nature of trions and their interaction with light has remained a puzzle. The composition and dispersion of polaritons involving trions provide insights into this puzzle. Trions and excitons in doped two-dimensional (2D) materials are not independent excitations but are strongly coupled as a result of Coulomb interactions. When excitons in doped 2D materials are also strongly coupled with light inside an optical waveguide, the resulting polariton states are coherent superpositions of exciton, trion, and photon states. We realize these exciton-trion-polaritons by coupling an electron-doped monolayer of two-dimensional material MoSe2 to the optical mode in a photonic crystal waveguide. Our theoretical model, based on a many-body description of these polaritons, reproduces the measured polariton energy band dispersion and Rabi splittings with excellent accuracy. Our work sheds light on the structure of trion states in 2D matrials and also on the indirect mechanism by which they interact with light.
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Submitted 26 June, 2021; v1 submitted 6 January, 2021;
originally announced January 2021.
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Exciton-Trion-Polaritons in Two-Dimensional Materials
Authors:
Farhan Rana,
Okan Koksal,
Minwoo Jung,
Gennady Shvets,
A. Nick Vamivakas,
Christina Manolatou
Abstract:
We present a many-body theory for exciton-trion-polaritons in doped two-dimensional materials. Exciton-trion-polaritons are robust coherent hybrid excitations involving excitons, trions, and photons. Signatures of these polaritons have been recently seen in experiments. In these polaritons, the 2-body exciton states are coupled to the material ground state via exciton-photon interaction and the 4-…
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We present a many-body theory for exciton-trion-polaritons in doped two-dimensional materials. Exciton-trion-polaritons are robust coherent hybrid excitations involving excitons, trions, and photons. Signatures of these polaritons have been recently seen in experiments. In these polaritons, the 2-body exciton states are coupled to the material ground state via exciton-photon interaction and the 4-body trion states are coupled to the exciton states via Coulomb interaction. The trion states are not directly optically coupled to the material ground state. The energy-momentum dispersion of these polaritons exhibit three bands. We calculate the energy band dispersions and the compositions of polaritons at different doping densities using Green's functions. The energy splittings between the polariton bands, as well as the spectral weights of the polariton bands, depend on the strength of the Coulomb coupling between the excitons and the trions and which in turn depends on the doping density. The excitons are Coulomb coupled to both bound and unbound trion states. The latter are exciton-electron scattering states and their inclusion is necessary to capture the spectral weight transfer among the polariton bands as a function of the doping density.
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Submitted 3 December, 2020; v1 submitted 24 September, 2020;
originally announced September 2020.
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Many-body theory of radiative lifetimes of exciton-trion superposition states in doped two-dimensional materials
Authors:
Farhan Rana,
Okan Koksal,
Minwoo Jung,
Gennady Shvets,
Christina Manolatou
Abstract:
Optical absorption and emission spectra of doped two-dimensional (2D) materials exhibit sharp peaks that are often identified with pure excitons and pure trions (or charged excitons), but both peaks have been recently attributed to superpositions of 2-body exciton and 4-body trion states and correspond to the approximate energy eigenstates in doped 2D materials. In this paper, we present the radia…
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Optical absorption and emission spectra of doped two-dimensional (2D) materials exhibit sharp peaks that are often identified with pure excitons and pure trions (or charged excitons), but both peaks have been recently attributed to superpositions of 2-body exciton and 4-body trion states and correspond to the approximate energy eigenstates in doped 2D materials. In this paper, we present the radiative lifetimes of these exciton-trion superposition energy eigenstates using a many-body formalism that is appropriate given the many-body nature of the strongly coupled exciton and trion states in doped 2D materials. Whereas the exciton component of these superposition eigenstates are optically coupled to the material ground state, and can emit a photon and decay into the material ground state provided the momentum of the eigenstate is within the light cone, the trion component is optically coupled only to the excited states of the material and can emit a photon even when the momentum of the eigenstate is outside the light cone. In an electron-doped 2D material, when a 4-body trion state with momentum outside the light cone recombines radiatively, and a photon is emitted with a momentum inside the light cone, the excess momentum is taken by an electron-hole pair left behind in the conduction band. The radiative lifetimes of the exciton-trion superposition states, with momenta inside the light cone, are found to be in the few hundred femtoseconds to a few picoseconds range and are strong functions of the doping density. The radiative lifetimes of exciton-trion superposition states, with momenta outside the light cone, are in the few hundred picoseconds to a few nanoseconds range and are again strongly dependent on the doping density.
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Submitted 20 January, 2021; v1 submitted 9 September, 2020;
originally announced September 2020.
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Intra- and Inter-Conduction Band Optical Absorption Processes in $β$-Ga$_2$O$_3$
Authors:
Arjan Singh,
Okan Koksal,
Nicholas Tanen,
Jonathan McCandless,
Debdeep Jena,
Huili,
Xing,
Hartwin Peelaers,
Farhan Rana
Abstract:
$β$-Ga$_2$O$_3$ is an ultra-wide bandgap semiconductor and is thus expected to be optically transparent to light of sub-bandgap wavelengths well into the ultraviolet. Contrary to this expectation, it is found here that free electrons in n-doped $β$-Ga$_2$O$_3…
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$β$-Ga$_2$O$_3$ is an ultra-wide bandgap semiconductor and is thus expected to be optically transparent to light of sub-bandgap wavelengths well into the ultraviolet. Contrary to this expectation, it is found here that free electrons in n-doped $β$-Ga$_2$O$_3$ absorb light from the IR to the UV wavelength range via intra- and inter-conduction band optical transitions. Intra-conduction band absorption occurs via an indirect optical phonon mediated process with a $1/ω^{3}$ dependence in the visible to near-IR wavelength range. This frequency dependence markedly differs from the $1/ω^{2}$ dependence predicted by the Drude model of free-carrier absorption. The inter-conduction band absorption between the lowest conduction band and a higher conduction band occurs via a direct optical process at $λ\sim 349$ nm (3.55 eV). Steady state and ultrafast optical spectroscopy measurements unambiguously identify both these absorption processes and enable quantitative measurements of the inter-conduction band energy, and the frequency dependence of absorption. Whereas the intra-conduction band absorption does not depend on light polarization, inter-conduction band absorption is found to be strongly polarization dependent. The experimental observations, in excellent agreement with recent theoretical predictions for $β$-Ga$_2$O$_3$, provide important limits of sub-bandgap transparency for optoelectronics in the deep-UV to visible wavelength range, and are also of importance for high electric field transport effects in this emerging semiconductor.
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Submitted 29 July, 2020; v1 submitted 26 June, 2020;
originally announced June 2020.
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A Many-Body Theory of the Optical Conductivity of Excitons and Trions in Two-Dimensional Materials
Authors:
Farhan Rana,
Okan Koksal,
Christina Manolatou
Abstract:
The optical spectra of two dimensional (2D) materials exhibit sharp absorption peaks that are commonly identified with exciton and trions (or charged excitons). In this paper, we show that excitons and trions in doped 2D materials can be described by two coupled Schrodinger-like equations - one two-body equation for excitons and another four-body equation for trions. In electron doped 2D materials…
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The optical spectra of two dimensional (2D) materials exhibit sharp absorption peaks that are commonly identified with exciton and trions (or charged excitons). In this paper, we show that excitons and trions in doped 2D materials can be described by two coupled Schrodinger-like equations - one two-body equation for excitons and another four-body equation for trions. In electron doped 2D materials, a bound trion state is identified with a four-body bound state of an exciton and an excited conduction band electron-hole pair. In doped 2D materials, the exciton and the trions states are the not the eigenstates of the full Hamiltonian and their respective Schrodinger equations are coupled due to Coulomb interactions. The strength of this coupling increases with the doping density. Solutions of these two coupled equations can quantitatively explain all the prominent features experimentally observed in the optical absorption spectra of 2D materials including the observation of two prominent absorption peaks and the variation of their energy splittings and spectral shapes and strengths with the electron density. The optical conductivity obtained in our work satisfies the optical conductivity sum rule exactly. A superposition of exciton and trion states can be used to construct a solution of the two coupled Schrodinger equations and this solution resembles the variational exciton-polaron state, thereby establishing the relationship between our approach and Fermi polaron physics.
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Submitted 14 July, 2020; v1 submitted 14 May, 2020;
originally announced May 2020.
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Measurement of Ultrafast Dynamics of Photoexcited Carriers in $β$-Ga$_2$O$_3$ by Two-Color Optical Pump-Probe Spectroscopy
Authors:
Okan Koksal,
Nicholas Tanen,
Debdeep Jena,
Huili Xing,
Farhan Rana
Abstract:
We report results from ultrafast two-color optical pump-probe spectroscopy on bulk $β$-Ga$_2$O$_3$. A two-photon absorption scheme is used to photoexcite carriers with the pump pulse and free-carrier absorption of the probe pulse is used to record the subsequent dynamics of the photoexcited carriers. Our results are consistent with carrier recombination via defect-assisted processes. We also obser…
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We report results from ultrafast two-color optical pump-probe spectroscopy on bulk $β$-Ga$_2$O$_3$. A two-photon absorption scheme is used to photoexcite carriers with the pump pulse and free-carrier absorption of the probe pulse is used to record the subsequent dynamics of the photoexcited carriers. Our results are consistent with carrier recombination via defect-assisted processes. We also observe transient polarization-selective optical absorption of the probe pulse by defect states under nonequilibrium conditions. A rate equation model for electron and hole capture by defects is proposed and used to explain the data. Whereas the rate constants for electron capture by defects are found to be temperature-independent, they are measured to be strongly temperature-dependent for hole capture and point to a lattice deformation/relaxation process accompanying hole capture. Our results shed light on the mechanisms and rates associated with carrier capture by defects in $β$-Ga$_2$O$_3$.
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Submitted 17 December, 2018;
originally announced December 2018.
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Radiative and Non-Radiative Exciton Energy Transfer in Monolayers of Two-Dimensional Transition Metal Dichalcogenides
Authors:
Christina Manolatou,
Haining Wang,
Weimin Chan,
Sandip Tiwari,
Farhan Rana
Abstract:
We present results on the rates of interlayer energy transfer between excitons in two-dimensional transition metal dichalcogenides (TMDs). We consider both radiative (mediated by real photons) and non-radiative (mediated by virtual photons) mechanisms of energy transfer using a unified Green's function approach that takes into account modification of the exciton energy dispersions as a result of i…
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We present results on the rates of interlayer energy transfer between excitons in two-dimensional transition metal dichalcogenides (TMDs). We consider both radiative (mediated by real photons) and non-radiative (mediated by virtual photons) mechanisms of energy transfer using a unified Green's function approach that takes into account modification of the exciton energy dispersions as a result of interactions. The large optical oscillator strengths associated with excitons in TMDs result in very fast energy transfer rates. The energy transfer times depend on the exciton momentum, exciton linewidth, and the interlayer separation and can range from values less than 100 femtoseconds to more than tens of picoseconds. Whereas inside the light cone the energy transfer rates of longitudinal and transverse excitons are comparable, outside the light cone the energy transfer rates of longitudinal excitons far exceed those of transverse excitons. Average energy transfer times for a thermal ensemble of longitudinal and transverse excitons is temperature dependent and can be smaller than a picosecond at room temperature for interlayer separations smaller than 10 nm. Energy transfer times of localized excitons range from values less than a picosecond to several tens of picoseconds. When the exciton scattering and dephasing rates are small, energy transfer dynamics exhibit coherent oscillations. Our results show that electromagnetic interlayer energy transfer can be an efficient mechanism for energy exchange between TMD monolayers.
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Submitted 21 January, 2016;
originally announced January 2016.
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Surface Recombination Limited Lifetimes of Photoexcited Carriers in Few-Layer Transition Metal Dichalcogenide MoS2
Authors:
Haining Wang,
Changjian Zhang,
Farhan Rana
Abstract:
We present results on photoexcited carrier lifetimes in few-layer transition metal dichalcogenide MoS2 using nondegenerate ultrafast optical pump-probe technique. Our results show a sharp increase of the carrier lifetimes with the number of layers in the sample. Carrier lifetimes increase from few tens of picoseconds in monolayer samples to more than a nanosecond in 10-layer samples. The inverse c…
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We present results on photoexcited carrier lifetimes in few-layer transition metal dichalcogenide MoS2 using nondegenerate ultrafast optical pump-probe technique. Our results show a sharp increase of the carrier lifetimes with the number of layers in the sample. Carrier lifetimes increase from few tens of picoseconds in monolayer samples to more than a nanosecond in 10-layer samples. The inverse carrier lifetime was found to scale according to the probability of the carriers being present at the surface layers, as given by the carrier wavefunction in few layer samples, which can be treated as quantum wells. The carrier lifetimes were found to be largely independent of the temperature and the inverse carrier lifetimes scaled linearly with the photoexcited carrier density. These observations are consistent with defect-assisted carrier recombination, in which the capture of electrons and holes by defects occurs via Auger scatterings. Our results suggest that carrier lifetimes in few-layer samples are surface recombination limited due to the much larger defect densities at the surface layers compared to the inner layers.
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Submitted 2 November, 2015; v1 submitted 29 October, 2015;
originally announced October 2015.
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Ultrafast Response of Monolayer Molybdenum Disulfide (MoS2) Photodetectors
Authors:
Haining Wang,
Changjian Zhang,
Weimin Chan,
Sandip Tiwari,
Farhan Rana
Abstract:
The strong light emission and absorption exhibited by single atomic layer transitional metal dichalcogenides in the visible to near-infrared wavelength range makes them attractive for optoelectronic applications. In this work, using two-pulse photovoltage correlation technique, we show that monolayer molybdenum disulfide photodetector can have intrinsic response times as short as 3 ps implying pho…
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The strong light emission and absorption exhibited by single atomic layer transitional metal dichalcogenides in the visible to near-infrared wavelength range makes them attractive for optoelectronic applications. In this work, using two-pulse photovoltage correlation technique, we show that monolayer molybdenum disulfide photodetector can have intrinsic response times as short as 3 ps implying photodetection bandwidths as wide as 300 GHz. The fast photodetector response is a result of the short electron-hole and exciton lifetimes in this material. Recombination of photoexcited carriers in most two-dimensional metal dichalcogenides is dominated by non-radiative processes, most notable among which is Auger scattering. The fast response time, and the ease of fabrication of these devices, make them interesting for low-cost ultrafast optical communication links.
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Submitted 7 October, 2015;
originally announced October 2015.
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Fast Exciton Annihilation by Capture of Electrons or Holes by Defects via Auger Scattering in Monolayer Metal Dichalcogenides
Authors:
Haining Wang,
Jared H. Strait,
Changjian Zhang,
Weimin Chan,
Christina Manolatou,
Sandip Tiwari,
Farhan Rana
Abstract:
The strong Coulomb interactions and the small exciton radii in two-dimensional metal dichalcogenides can result in very fast capture of electrons and holes of excitons by mid-gap defects from Auger processes. In the Auger processes considered here, an exciton is annihilated at a defect site with the capture of the electron (or the hole) by the defect and the hole (or the electron) is scattered to…
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The strong Coulomb interactions and the small exciton radii in two-dimensional metal dichalcogenides can result in very fast capture of electrons and holes of excitons by mid-gap defects from Auger processes. In the Auger processes considered here, an exciton is annihilated at a defect site with the capture of the electron (or the hole) by the defect and the hole (or the electron) is scattered to a high energy. In the case of excitons, the probability of finding an electron and a hole near each other is enhanced many folds compared to the case of free uncorrelated electrons and holes. Consequently, the rate of carrier capture by defects from Auger scattering for excitons in metal dichalcogenides can be 100-1000 times larger than for uncorrelated electrons and holes for carrier densities in the $10^{11}$-$10^{12}$ cm$^{-2}$ range. We calculate the capture times of electrons and holes by defects and show that the capture times can be in the sub-picosecond to a few picoseconds range. The capture rates exhibit linear as well as quadratic dependence on the exciton density. These fast time scales agree well with the recent experimental observations, and point to the importance of controlling defects in metal dichalcogenides for optoelectronic applications.
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Submitted 8 December, 2014; v1 submitted 12 October, 2014;
originally announced October 2014.
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Ultrafast Dynamics of Defect-Assisted Electron-Hole Recombination in Monolayer MoS2
Authors:
Haining Wang,
Changjian Zhang,
Farhan Rana
Abstract:
In this letter, we present non-degenerate ultrafast optical pump-probe studies of the carrier recombination dynamics in MoS$_{2}$ monolayers. By tuning the probe to wavelengths much longer than the exciton line, we make the probe transmission sensitive to the total population of photoexcited electrons and holes. Our measurement reveals two distinct time scales over which the photoexcited electrons…
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In this letter, we present non-degenerate ultrafast optical pump-probe studies of the carrier recombination dynamics in MoS$_{2}$ monolayers. By tuning the probe to wavelengths much longer than the exciton line, we make the probe transmission sensitive to the total population of photoexcited electrons and holes. Our measurement reveals two distinct time scales over which the photoexcited electrons and holes recombine; a fast time scale that lasts $\sim$2 ps and a slow time scale that lasts longer than $\sim$100 ps. The temperature and the pump fluence dependence of the observed carrier dynamics are consistent with defect-assisted recombination as being the dominant mechanism for electron-hole recombination in which the electrons and holes are captured by defects via Auger processes. Strong Coulomb interactions in two dimensional atomic materials, together with strong electron and hole correlations in two dimensional metal dichalcogenides, make Auger processes particularly effective for carrier capture by defects. We present a model for carrier recombination dynamics that quantitatively explains all features of our data for different temperatures and pump fluences. The theoretical estimates for the rate constants for Auger carrier capture are in good agreement with the experimentally determined values. Our results underscore the important role played by Auger processes in two dimensional atomic materials.
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Submitted 16 September, 2014;
originally announced September 2014.
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Radiative Lifetimes of Excitons and Trions in Monolayers of Metal Dichalcogenide MoS2
Authors:
Haining Wang,
Changjian Zhang,
Weimin Chan,
Christina Manolatou,
Sandip Tiwari,
Farhan Rana
Abstract:
We present results on the radiative lifetimes of excitons and trions in a monolayer of metal dichalcogenide MoS2. The small exciton radius and the large exciton optical oscillator strength result in radiative lifetimes in the 0.18-0.30 ps range for excitons that have small in-plane momenta and couple to radiation. Average lifetimes of thermally distributed excitons depend linearly on the exciton t…
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We present results on the radiative lifetimes of excitons and trions in a monolayer of metal dichalcogenide MoS2. The small exciton radius and the large exciton optical oscillator strength result in radiative lifetimes in the 0.18-0.30 ps range for excitons that have small in-plane momenta and couple to radiation. Average lifetimes of thermally distributed excitons depend linearly on the exciton temperature and can be in the few picoseconds range at small temperatures and more than a nanosecond near room temperature. Localized excitons exhibit lifetimes in the same range and the lifetime increases as the localization length decreases. The radiative lifetimes of trions are in the hundreds of picosecond range and increase with the increase in the trion momentum. Average lifetimes of thermally distributed trions increase with the trion temperature as the trions acquire thermal energy and larger momenta. We expect our theoretical results to be applicable to most other 2D transition metal dichalcogenides.
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Submitted 19 December, 2015; v1 submitted 13 September, 2014;
originally announced September 2014.
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High Intrinsic Mobility and Ultrafast Carrier Dynamics in Multilayer Metal Dichalcogenide MoS2
Authors:
Jared H. Strait,
Parinita Nene,
Farhan Rana
Abstract:
The ultimate limitations on carrier mobilities in metal dichalcogenides, and the dynamics associated with carrier relaxation, are unclear. We present measurements of the frequency-dependent conductivity of multilayer dichalcogenide MoS2 by optical-pump terahertz-probe spectroscopy. We find mobilities in this material approaching 4200 cm2/Vs at low temperatures. The temperature dependence of scatte…
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The ultimate limitations on carrier mobilities in metal dichalcogenides, and the dynamics associated with carrier relaxation, are unclear. We present measurements of the frequency-dependent conductivity of multilayer dichalcogenide MoS2 by optical-pump terahertz-probe spectroscopy. We find mobilities in this material approaching 4200 cm2/Vs at low temperatures. The temperature dependence of scattering indicates that the mobility, an order of magnitude larger than previously reported for MoS2, is intrinsically limited by acoustic phonon scattering at THz frequencies. Our measurements of carrier relaxation reveal picosecond cooling times followed by recombination lasting tens of nanoseconds and dominated by Auger scattering into defects. Our results provide a useful context in which to understand and evaluate the performance of MoS2-based electronic and optoelectronic devices.
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Submitted 11 August, 2014;
originally announced August 2014.
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Coupling of Plasmon Modes in Graphene Microstructures
Authors:
Parinita Nene,
Jared H. Strait,
Wei-Min Chan,
Christina Manolatou,
Joshua W. Kevek,
Sandip Tiwari,
Paul L. McEuen,
Farhan Rana
Abstract:
A variety of different graphene plasmonic structures and devices have been proposed and demonstrated experimentally. Plasmon modes in graphene microstructures interact strongly via the depolarization fields. An accurate quantitative description of the coupling between plasmon modes is required for designing and understanding complex plasmonic devices. Drawing inspiration from microphotonics, we pr…
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A variety of different graphene plasmonic structures and devices have been proposed and demonstrated experimentally. Plasmon modes in graphene microstructures interact strongly via the depolarization fields. An accurate quantitative description of the coupling between plasmon modes is required for designing and understanding complex plasmonic devices. Drawing inspiration from microphotonics, we present a coupled-mode theory for graphene plasmonics in which the plasmon eigenmodes of a coupled system are expressed in terms of the plasmon eigenmodes of its uncoupled sub-systems. The coupled-mode theory enables accurate computation of the coupling between the plasmon modes and of the resulting dynamics. We compare theory with experiments performed on the plasmon modes in coupled arrays of graphene strips. In experiments, we tune the coupling by changing the spacing between the graphene strips in the array. Our results show that the coupling parameters obtained from the coupled-mode theory and the plasmon frequency changes resulting from this coupling agree very well with experiments. The work presented here provides a framework for designing and understanding coupled graphene plasmonic structures.
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Submitted 7 August, 2014;
originally announced August 2014.
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Absorption of Light by Excitons and Trions in Monolayers of Metal Dichalcogenide MoS$_{2}$: Experiments and Theory
Authors:
Changjian Zhang,
Haining Wang,
Weimin Chan,
Christina Manolatou,
Farhan Rana
Abstract:
We measure the optical absorption spectra and optical conductivities of excitons and trions in monolayers of metal dichalcogenide MoS$_{2}$ and compare the results with theoretical models. Our results show that the Wannier-Mott model for excitons, with modifications to account for small exciton radii and large exciton relative wavefunction spread in momentum space, phase space blocking due to Paul…
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We measure the optical absorption spectra and optical conductivities of excitons and trions in monolayers of metal dichalcogenide MoS$_{2}$ and compare the results with theoretical models. Our results show that the Wannier-Mott model for excitons, with modifications to account for small exciton radii and large exciton relative wavefunction spread in momentum space, phase space blocking due to Pauli exclusion in doped materials, and wavevector dependent dielectric constant, gives results that agree well with experiments. The measured exciton optical absorption spectra are used to obtain experimental estimates for the exciton radii that fall in the $7-10Å$ range and agree well with theory. The measured trion optical absorption spectra are used to obtain values for the trion radii that also agree well with theory. The measured values of the exciton and trion radii correspond to binding energies that are in good agreement with values obtained from first principles calculations.
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Submitted 12 April, 2014; v1 submitted 2 February, 2014;
originally announced February 2014.
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Temperature Renormalization of Optical Spectra of Monolayer MoS2
Authors:
Ryan Soklaski,
Yufeng Liang,
Changjian Zhang,
Haining Wang,
Farhan Rana,
Li Yang
Abstract:
Newly measured optical absorption and photoluminescence spectra reveal substantial frequency shifts of both exciton and trion peaks as monolayer MoS2 is cooled from 363 K to 4 K. First-principles simulations using the GW-Bethe-Salpeter Equation approach satisfactorily reproduce these frequency shifts by incorporating many-electron interactions and the thermal expansion of the in-plane lattice cons…
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Newly measured optical absorption and photoluminescence spectra reveal substantial frequency shifts of both exciton and trion peaks as monolayer MoS2 is cooled from 363 K to 4 K. First-principles simulations using the GW-Bethe-Salpeter Equation approach satisfactorily reproduce these frequency shifts by incorporating many-electron interactions and the thermal expansion of the in-plane lattice constant. Studying these temperature effects in monolayer MoS2 is crucial for rectifying the results of room-temperature experiments with the previous predictions of zero-temperature-limit simulations. Moreover, we estimate that the thermal expansion coefficient of monolayer MoS2 is around 25% less than that of bulk counterpart by tracking the frequency shifts of the exciton or trion peaks in optical spectra. This may serve as a convenient way to estimate thermal expansion coefficients of general two-dimensional chalcogenides.
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Submitted 22 January, 2014;
originally announced January 2014.
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Confined Plasmons in Graphene Microstructures: Experiments and Theory
Authors:
Jared H. Strait,
Parinita S. Nene,
Wei-Min Chan,
Christina Manolatou,
Joshua W. Kevek,
Sandip Tiwari,
Paul L. McEuen,
Farhan Rana
Abstract:
Graphene, a two-dimensional material with a high mobility and a tunable conductivity, is uniquely suited for plasmonics. The frequency dispersion of plasmons in bulk graphene has been studied both theoretically and experimentally, whereas no theoretical models have been reported and tested against experiments for confined plasmon modes in graphene microstructures. In this paper, we present experim…
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Graphene, a two-dimensional material with a high mobility and a tunable conductivity, is uniquely suited for plasmonics. The frequency dispersion of plasmons in bulk graphene has been studied both theoretically and experimentally, whereas no theoretical models have been reported and tested against experiments for confined plasmon modes in graphene microstructures. In this paper, we present experimental measurements as well as analytical and computational models for such confined modes. We compare experimental measurements with theory for plasmon modes in interacting arrays of graphene strips and demonstrate a good agreement. The comparison between experimental and theoretical results reveals the important role played by interaction among the plasmon modes of neighboring graphene structures.
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Submitted 5 March, 2013; v1 submitted 24 February, 2013;
originally announced February 2013.
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Very Slow Cooling Dynamics of Photoexcited Carriers in Graphene Observed by Optical-Pump Terahertz-Probe Spectroscopy
Authors:
Jared H. Strait,
Haining Wang,
Shriram Shivaraman,
Virgil B. Shields,
Michael G. Spencer,
Farhan Rana
Abstract:
Using optical-pump terahertz-probe spectroscopy, we study the relaxation dynamics of photoexcited carriers in graphene at different temperatures. We find that at lower temperatures the tail of the relaxation transients as measured by the differential probe transmission becomes slower, extending beyond several hundred picoseconds at temperatures below 50K. We interpret the observed relaxation trans…
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Using optical-pump terahertz-probe spectroscopy, we study the relaxation dynamics of photoexcited carriers in graphene at different temperatures. We find that at lower temperatures the tail of the relaxation transients as measured by the differential probe transmission becomes slower, extending beyond several hundred picoseconds at temperatures below 50K. We interpret the observed relaxation transients as resulting from the cooling of the photoexcited carriers via phonon emission. The slow cooling of the photoexcited carriers at low temperatures is attributed to the bulk of the electron and hole energy distributions moving close enough to the Dirac point such that both intraband and interband scattering of carriers via optical phonon emission becomes inefficient for removing heat from the carriers. Our model, which includes intraband carrier scattering and interband carrier recombination and generation, agrees very well with the experimental observations.
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Submitted 12 August, 2011;
originally announced August 2011.
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Ultrafast Carrier Recombination and Generation Rates for Plasmon Emission and Absorption in Graphene
Authors:
Farhan Rana,
Jared H. Strait,
Haining Wang,
Christina Manolatou
Abstract:
Electron-hole generation and recombination rates for plasmon emission and absorption in Graphene are presented. The recombination times of carriers due to plasmon emission have been found to be in the tens of femtoseconds to hundreds of picoseconds range. The recombination times depend sensitively on the carrier energy, carrier density, temperature, and the plasmon dispersion. Carriers near the Di…
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Electron-hole generation and recombination rates for plasmon emission and absorption in Graphene are presented. The recombination times of carriers due to plasmon emission have been found to be in the tens of femtoseconds to hundreds of picoseconds range. The recombination times depend sensitively on the carrier energy, carrier density, temperature, and the plasmon dispersion. Carriers near the Dirac point are found to have much longer lifetimes compared to carriers at higher energies. Plasmons in a Graphene layer on a polar substrate hybridize with the surface optical phonons and this hybridization modifies the plasmon dispersion. We also present generation and recombination rates of carriers due to plasmon emission and absorption in Graphene layers on polar substrates.
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Submitted 10 June, 2011; v1 submitted 14 September, 2010;
originally announced September 2010.
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Ultrafast Relaxation Dynamics of Hot Optical Phonons in Graphene
Authors:
Haining Wang,
Jared H. Strait,
Paul A. George,
Shriram Shivaraman,
Virgil B. Shields,
Mvs Chandrashekhar,
Jeonghyun Hwang,
Carlos S. Ruiz-Vargas,
Farhan Rana,
Michael G. Spencer,
Jiwoong Park
Abstract:
Using ultrafast optical pump-probe spectroscopy, we study the relaxation dynamics of hot optical phonons in few-layer and multi-layer graphene films grown by epitaxy on silicon carbide substrates and by chemical vapor deposition on nickel substrates. In the first few hundred femtoseconds after photoexcitation, the hot carriers lose most of their energy to the generation of hot optical phonons wh…
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Using ultrafast optical pump-probe spectroscopy, we study the relaxation dynamics of hot optical phonons in few-layer and multi-layer graphene films grown by epitaxy on silicon carbide substrates and by chemical vapor deposition on nickel substrates. In the first few hundred femtoseconds after photoexcitation, the hot carriers lose most of their energy to the generation of hot optical phonons which then present the main bottleneck to subsequent carrier cooling. Optical phonon cooling on short time scales is found to be independent of the graphene growth technique, the number of layers, and the type of the substrate. We find average phonon lifetimes in the 2.5-2.55 ps range. We model the relaxation dynamics of the coupled carrier-phonon system with rate equations and find a good agreement between the experimental data and the theory. The extracted optical phonon lifetimes agree very well with the theory based on anharmonic phonon interactions.
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Submitted 28 December, 2009; v1 submitted 26 September, 2009;
originally announced September 2009.
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Measurements of the Carrier Dynamics and Terahertz Response of Oriented Germanium Nanowires using Optical-Pump Terahertz-Probe Spectroscopy
Authors:
Jared H. Strait,
Paul A. George,
Mark Levendorf,
Martin Blood-Forsythe,
Farhan Rana,
Jiwoong Park
Abstract:
We have measured the terahertz response of oriented germanium nanowires using ultrafast optical-pump terahertz-probe spectroscopy. We present results on the time, frequency, and polarization dependence of the terahertz response. Our results indicate intraband energy relaxation times of photoexcited carriers in the 1.5-2.0 ps range, carrier density dependent interband electron-hole recombination…
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We have measured the terahertz response of oriented germanium nanowires using ultrafast optical-pump terahertz-probe spectroscopy. We present results on the time, frequency, and polarization dependence of the terahertz response. Our results indicate intraband energy relaxation times of photoexcited carriers in the 1.5-2.0 ps range, carrier density dependent interband electron-hole recombination times in the 75-125 ps range, and carrier momentum scattering rates in the 60-90 fs range. Additionally, the terahertz response of the nanowires is strongly polarization dependent despite the subwavelength dimensions of the nanowires. The differential terahertz transmission is found to be large when the field is polarized parallel to the nanowires and very small when the field is polarized perpendicular to the nanowires. This polarization dependence of the terahertz response can be explained in terms of the induced depolarization fields and the resulting magnitudes of the surface plasmon frequencies.
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Submitted 8 May, 2009;
originally announced May 2009.
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Carrier Recombination and Generation Rates for Intravalley and Intervalley Phonon Scattering in Graphene
Authors:
Farhan Rana,
Paul A. George,
Jared H. Strait,
Jahan Dawlaty,
Shriram Shivaraman,
Mvs Chandrashekhar,
Michael G. Spencer
Abstract:
Electron-hole generation and recombination rates for intravalley and intervalley phonon scattering in Graphene are presented. The transverse and the longitudinal optical phonon modes ($E_{2g}$-modes) near the zone center ($Γ$-point) contribute to intravalley interband carrier scattering. At the zone edge ($K(K')$-point), only the transverse optical phonon mode ($A'_{1}$-mode) contributes signifi…
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Electron-hole generation and recombination rates for intravalley and intervalley phonon scattering in Graphene are presented. The transverse and the longitudinal optical phonon modes ($E_{2g}$-modes) near the zone center ($Γ$-point) contribute to intravalley interband carrier scattering. At the zone edge ($K(K')$-point), only the transverse optical phonon mode ($A'_{1}$-mode) contributes significantly to intervalley interband scattering with recombination rates faster than those due to zone center phonons. The calculated recombination times range from less than a picosecond to more than hundreds of picoseconds and are strong functions of temperature and electron and hole densities. The theoretical calculations agree well with experimental measurements of the recombination rates of photoexcited carriers in graphene.
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Submitted 5 January, 2009; v1 submitted 2 January, 2009;
originally announced January 2009.
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Emission of Terahertz Radiation from SiC
Authors:
Jared H. Strait,
Paul A. George,
Jahan Dawlaty,
Shriram Shivaraman,
Mvs Chandrashekhar,
Farhan Rana,
Michael G. Spencer
Abstract:
We report the emission of strong coherent broadband terahertz radiation from 6H-Silicon-Carbide (SiC) excited with optical pulses. The measured terahertz spectral signal-to-noise ratio is better than one thousand. We determine that the terahertz radiation is generated via second order optical nonlinearity (optical rectification). We present a measurement of the ratio of nonlinear susceptibility…
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We report the emission of strong coherent broadband terahertz radiation from 6H-Silicon-Carbide (SiC) excited with optical pulses. The measured terahertz spectral signal-to-noise ratio is better than one thousand. We determine that the terahertz radiation is generated via second order optical nonlinearity (optical rectification). We present a measurement of the ratio of nonlinear susceptibility tensor elements $χ_{zzz}^{(2)}/χ_{zxx}^{(2)}$ and the complex index of refraction of silicon carbide at THz frequencies.
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Submitted 13 May, 2009; v1 submitted 4 September, 2008;
originally announced September 2008.
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Ultrafast Optical-Pump Terahertz-Probe Spectroscopy of the Carrier Relaxation and Recombination Dynamics in Epitaxial Graphene
Authors:
Paul A. George,
Jared Strait,
Jahan Dawlaty,
Shriram Shivaraman,
Mvs Chandrashekhar,
Farhan Rana,
Michael G. Spencer
Abstract:
The ultrafast relaxation and recombination dynamics of photogenerated electrons and holes in epitaxial graphene are studied using optical-pump Terahertz-probe spectroscopy. The conductivity in graphene at Terahertz frequencies depends on the carrier concentration as well as the carrier distribution in energy. Time-resolved studies of the conductivity can therefore be used to probe the dynamics a…
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The ultrafast relaxation and recombination dynamics of photogenerated electrons and holes in epitaxial graphene are studied using optical-pump Terahertz-probe spectroscopy. The conductivity in graphene at Terahertz frequencies depends on the carrier concentration as well as the carrier distribution in energy. Time-resolved studies of the conductivity can therefore be used to probe the dynamics associated with carrier intraband relaxation and interband recombination. We report the electron-hole recombination times in epitaxial graphene for the first time. Our results show that carrier cooling occurs on sub-picosecond time scales and that interband recombination times are carrier density dependent.
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Submitted 22 July, 2008; v1 submitted 30 May, 2008;
originally announced May 2008.
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Measurement of the Optical Absorption Spectra of Epitaxial Graphene from Terahertz to Visible
Authors:
Jahan M. Dawlaty,
Shriram Shivaraman,
Jared Strait,
Paul George,
Mvs Chandrashekhar,
Farhan Rana,
Michael G. Spencer,
Dmitry Veksler,
Yunqing Chen
Abstract:
We present experimental results on the optical absorption spectra of epitaxial graphene from the visible to the terahertz (THz) frequency range. In the THz range, the absorption is dominated by intraband processes with a frequency dependence similar to the Drude model. In the near IR range, the absorption is due to interband processes and the measured optical conductivity is close to the theoret…
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We present experimental results on the optical absorption spectra of epitaxial graphene from the visible to the terahertz (THz) frequency range. In the THz range, the absorption is dominated by intraband processes with a frequency dependence similar to the Drude model. In the near IR range, the absorption is due to interband processes and the measured optical conductivity is close to the theoretical value of $e^{2}/4\hbar$. We extract values for the carrier densities, the number of carbon atom layers, and the intraband scattering times from the measurements.
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Submitted 16 August, 2008; v1 submitted 22 January, 2008;
originally announced January 2008.
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Subwavelength Nanopatch Cavities for Semiconductor Plasmon Lasers
Authors:
Christina Manolatou,
Farhan Rana
Abstract:
We propose and analyze a family of nanoscale cavities for electrically-pumped surface-emitting semiconductor lasers that use surface plasmons to provide optical mode confinement in cavities which have dimensions in the 100-300 nm range. The proposed laser cavities are in many ways nanoscale optical versions of micropatch antennas that are commonly used at microwave/RF frequencies. Surface plasmo…
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We propose and analyze a family of nanoscale cavities for electrically-pumped surface-emitting semiconductor lasers that use surface plasmons to provide optical mode confinement in cavities which have dimensions in the 100-300 nm range. The proposed laser cavities are in many ways nanoscale optical versions of micropatch antennas that are commonly used at microwave/RF frequencies. Surface plasmons are not only used for mode confinement but also for output beam shaping to realize single-lobe far-field radiation patterns with narrow beam waists from subwavelength size cavities. We identify the cavity modes with the largest quality factors and modal gain, and show that in the near-IR wavelength range (1.0-1.6 microns) cavity losses (including surface plasmon losses) can be compensated by the strong mode confinement in the gain region provided by the surface plasmons themselves and the required material threshold gain values can be smaller than 700 1/cm.
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Submitted 9 December, 2007;
originally announced December 2007.
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Measurement of Ultrafast Carrier Dynamics in Epitaxial Graphene
Authors:
Jahan M. Dawlaty,
Shriram Shivaraman,
Mvs Chandrashekhar,
Farhan Rana,
Michael G. Spencer
Abstract:
Using ultrafast optical pump-probe spectroscopy, we have measured carrier relaxation times in epitaxial graphene layers grown on SiC wafers. We find two distinct time scales associated with the relaxation of nonequilibrium photogenerated carriers. An initial fast relaxation transient in the 70-120 fs range is followed by a slower relaxation process in the 0.4-1.7 ps range. The slower relaxation…
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Using ultrafast optical pump-probe spectroscopy, we have measured carrier relaxation times in epitaxial graphene layers grown on SiC wafers. We find two distinct time scales associated with the relaxation of nonequilibrium photogenerated carriers. An initial fast relaxation transient in the 70-120 fs range is followed by a slower relaxation process in the 0.4-1.7 ps range. The slower relaxation time is found to be inversely proportional to the degree of crystalline disorder in the graphene layers as measured by Raman spectroscopy. We relate the measured fast and slow time constants to carrier-carrier and carrier-phonon intraband and interband scattering processes in graphene.
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Submitted 2 December, 2007;
originally announced December 2007.
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Graphene Terahertz Plasmon Oscillators
Authors:
Farhan Rana
Abstract:
In this paper we propose and discuss coherent terahertz sources based on charge density wave (plasmon) amplification in two dimensional graphene. The coupling of the plasmons to interband electron-hole transitions in population inverted graphene layers can lead to plasmon amplification through stimulated emission. Plasmon gain values in graphene can be very large due to the small group velocity…
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In this paper we propose and discuss coherent terahertz sources based on charge density wave (plasmon) amplification in two dimensional graphene. The coupling of the plasmons to interband electron-hole transitions in population inverted graphene layers can lead to plasmon amplification through stimulated emission. Plasmon gain values in graphene can be very large due to the small group velocity of the plasmons and the strong confinement of the plasmon field in the vicinity of the graphene layer. We present a transmission line model for plasmon propagation in graphene that includes plasmon dissipation and plasmon interband gain due to stimulated emission. Using this model, we discuss design for terahertz plasmon oscillators and derive the threshold condition for oscillation taking into account internal losses and also losses due to external coupling. The large gain values available at terahertz frequencies in graphene can lead to integrated oscillators that have dimensions in the 1-10 micron range.
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Submitted 18 October, 2007;
originally announced October 2007.
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Electron-Hole Generation and Recombination Rates for Coulomb Scattering in Graphene
Authors:
Farhan Rana
Abstract:
We calculate electron-hole generation and recombination rates for Coulomb scattering (Auger recombination and impact ionization) in Graphene. The conduction and valence band dispersion relation in Graphene together with energy and momentum conservation requirements restrict the phase space for Coulomb scattering so that electron-hole recombination times can be much longer than 1 ps for electron-…
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We calculate electron-hole generation and recombination rates for Coulomb scattering (Auger recombination and impact ionization) in Graphene. The conduction and valence band dispersion relation in Graphene together with energy and momentum conservation requirements restrict the phase space for Coulomb scattering so that electron-hole recombination times can be much longer than 1 ps for electron-hole densities smaller than $10^{12}$ cm$^{-2}$.
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Submitted 14 May, 2007; v1 submitted 9 May, 2007;
originally announced May 2007.
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Plasmon Amplification through Stimulated Emission at Terahertz Frequencies in Graphene
Authors:
Farhan Rana,
Faisal R. Ahmad
Abstract:
We show that plasmons in two-dimensional graphene can have net gain at terahertz frequencies. The coupling of the plasmons to interband electron-hole transitions in population inverted graphene layers can lead to plasmon amplification through the process of stimulated emission. We calculate plasmon gain for different electron-hole densities and temperatures and show that the gain values can exce…
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We show that plasmons in two-dimensional graphene can have net gain at terahertz frequencies. The coupling of the plasmons to interband electron-hole transitions in population inverted graphene layers can lead to plasmon amplification through the process of stimulated emission. We calculate plasmon gain for different electron-hole densities and temperatures and show that the gain values can exceed $10^{4}$ cm$^{-1}$ in the 1-10 terahertz frequency range, for electron-hole densities in the $10^{9}$-$10^{11}$ cm$^{-2}$ range, even when plasmon energy loss due to intraband scattering is considered. Plasmons are found to exhibit net gain for intraband scattering times shorter than 100 fs. Such high gain values could allow extremely compact terahertz amplifiers and oscillators that have dimensions in the 1-10 $μ$m range.
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Submitted 26 May, 2007; v1 submitted 4 April, 2007;
originally announced April 2007.
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Theory of Current Noise and Photon Noise in Quantum Cascade Lasers
Authors:
Farhan Rana,
Rajeev J. Ram
Abstract:
A comprehensive model for the photon number fluctuations and the current noise in quantum cascade lasers is presented. It is shown that the photon intensity noise in quantum cascade lasers exhibits little amplitude squeezing even when noise in the drive current is suppressed below the shot noise value. This is in contrast to interband semiconductor diode lasers in which the laser intensity noise…
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A comprehensive model for the photon number fluctuations and the current noise in quantum cascade lasers is presented. It is shown that the photon intensity noise in quantum cascade lasers exhibits little amplitude squeezing even when noise in the drive current is suppressed below the shot noise value. This is in contrast to interband semiconductor diode lasers in which the laser intensity noise can be squeezed well below the shot noise limit by high impedance suppression of fluctuations in the drive current. The theoretical model presented in this paper self-consistently accounts for the suppression of current noise in electron transport in multiple quantum well structures due to various electronic correlations. The nature of these electronic correlations is discussed. Mechanisms responsible for the reduced photon number squeezing in intersubband lasers are elucidated. Scaling of the laser intensity noise and the current noise with the number of cascaded gain stages is also described. Direct current modulation response of quantum cascade lasers is also studied, and it is shown that contrary to the predictions in the literature of terahertz modulation bandwidth for these lasers, bandwidth of almost all quantum cascade lasers that have been reported in the literature is limited by the inverse photon lifetime inside the laser cavity to tens of gigahertz.
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Submitted 14 August, 2001;
originally announced August 2001.
