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PCLD: Point Cloud Layerwise Diffusion for Adversarial Purification
Authors:
Mert Gulsen,
Batuhan Cengiz,
Yusuf H. Sahin,
Gozde Unal
Abstract:
Point clouds are extensively employed in a variety of real-world applications such as robotics, autonomous driving and augmented reality. Despite the recent success of point cloud neural networks, especially for safety-critical tasks, it is essential to also ensure the robustness of the model. A typical way to assess a model's robustness is through adversarial attacks, where test-time examples are…
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Point clouds are extensively employed in a variety of real-world applications such as robotics, autonomous driving and augmented reality. Despite the recent success of point cloud neural networks, especially for safety-critical tasks, it is essential to also ensure the robustness of the model. A typical way to assess a model's robustness is through adversarial attacks, where test-time examples are generated based on gradients to deceive the model. While many different defense mechanisms are studied in 2D, studies on 3D point clouds have been relatively limited in the academic field. Inspired from PointDP, which denoises the network inputs by diffusion, we propose Point Cloud Layerwise Diffusion (PCLD), a layerwise diffusion based 3D point cloud defense strategy. Unlike PointDP, we propagated the diffusion denoising after each layer to incrementally enhance the results. We apply our defense method to different types of commonly used point cloud models and adversarial attacks to evaluate its robustness. Our experiments demonstrate that the proposed defense method achieved results that are comparable to or surpass those of existing methodologies, establishing robustness through a novel technique. Code is available at https://github.com/batuceng/diffusion-layer-robustness-pc.
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Submitted 11 March, 2024;
originally announced March 2024.
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epsilon-Mesh Attack: A Surface-based Adversarial Point Cloud Attack for Facial Expression Recognition
Authors:
Batuhan Cengiz,
Mert Gulsen,
Yusuf H. Sahin,
Gozde Unal
Abstract:
Point clouds and meshes are widely used 3D data structures for many computer vision applications. While the meshes represent the surfaces of an object, point cloud represents sampled points from the surface which is also the output of modern sensors such as LiDAR and RGB-D cameras. Due to the wide application area of point clouds and the recent advancements in deep neural networks, studies focusin…
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Point clouds and meshes are widely used 3D data structures for many computer vision applications. While the meshes represent the surfaces of an object, point cloud represents sampled points from the surface which is also the output of modern sensors such as LiDAR and RGB-D cameras. Due to the wide application area of point clouds and the recent advancements in deep neural networks, studies focusing on robust classification of the 3D point cloud data emerged. To evaluate the robustness of deep classifier networks, a common method is to use adversarial attacks where the gradient direction is followed to change the input slightly. The previous studies on adversarial attacks are generally evaluated on point clouds of daily objects. However, considering 3D faces, these adversarial attacks tend to affect the person's facial structure more than the desired amount and cause malformation. Specifically for facial expressions, even a small adversarial attack can have a significant effect on the face structure. In this paper, we suggest an adversarial attack called $ε$-Mesh Attack, which operates on point cloud data via limiting perturbations to be on the mesh surface. We also parameterize our attack by $ε$ to scale the perturbation mesh. Our surface-based attack has tighter perturbation bounds compared to $L_2$ and $L_\infty$ norm bounded attacks that operate on unit-ball. Even though our method has additional constraints, our experiments on CoMA, Bosphorus and FaceWarehouse datasets show that $ε$-Mesh Attack (Perpendicular) successfully confuses trained DGCNN and PointNet models $99.72\%$ and $97.06\%$ of the time, with indistinguishable facial deformations. The code is available at https://github.com/batuceng/e-mesh-attack.
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Submitted 11 March, 2024;
originally announced March 2024.
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Twisted topology and Bipolar Non-Hermitian Skin Effect induced by long-range asymmetric coupling
Authors:
S. M. Rafi-Ul-Islam,
Zhuo Bin Siu,
Haydar Sahin,
Md. Saddam Hossain Razo,
Mansoor B. A. Jalil
Abstract:
We investigate the twisted topology of the complex eigenspectrum of a one-dimensional non-Hermitian system under the influence of long-range unidirectional coupling. Unlike the complex energy spectrum of the conventional Hatano-Nelson chain, which takes the form of a single loop with a topological winding index of a definite sign, the introduction of long-range unidirectional hopping results in th…
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We investigate the twisted topology of the complex eigenspectrum of a one-dimensional non-Hermitian system under the influence of long-range unidirectional coupling. Unlike the complex energy spectrum of the conventional Hatano-Nelson chain, which takes the form of a single loop with a topological winding index of a definite sign, the introduction of long-range unidirectional hopping results in the creation of multiple twisted loops. These twisted loops exhibit opposite signs of the topological winding index, which correlate to alternating clockwise and anticlockwise energy windings. The simultaneous presence of both signs of the winding index translates into a bipolar non-Hermitian skin effect (NHSE), which challenges the conventional wisdom that the NHSE localization is dependent on the direction of the dominant nearest-neighbor interactions. In this bipolar NHSE, the exponents of the complex energy eigenvectors corresponding to clockwise and anti-clockwise windings, lie inside and outside of the complex unit circle, respectively. Interestingly, at the intersections of oppositely oriented energy loops where the sign of the topological winding index flips, the energy becomes real-valued, leading to a suppression of the NHSE. This marks the emergence of Bloch-like contact points, where both the bipolar NHSE and the traditional NHSE vanish. Based on the non-Hermitian model we provide analytical insights into the effects of long-range unidirectional coupling to the winding topology of its complex energy spectra and their broader implications for the field of condensed matter physics.
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Submitted 20 December, 2023;
originally announced December 2023.
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Thickness-dependent Characteristics and Oxidation of Cadmium
Authors:
Arda Gulucu,
Hasan Sahin
Abstract:
In this study, the structural, electronic and vibrational properties of thinnest possible Cadmium crystal are investigated by performing first-principle calculations. Total energy optimization and dynamic stability calculations reveal that the thinnest possible crystal structure is a double-layered structure consisting of alternating layers formed by trigonal arrangements of Cd atoms. Excessive so…
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In this study, the structural, electronic and vibrational properties of thinnest possible Cadmium crystal are investigated by performing first-principle calculations. Total energy optimization and dynamic stability calculations reveal that the thinnest possible crystal structure is a double-layered structure consisting of alternating layers formed by trigonal arrangements of Cd atoms. Excessive softening of optical phonons occurs as a result of structural relaxation when going from a bulk to a single layer (SL) structure. It is also shown that thinnest structure obtained from bulk Cd crystals maintains its metallic feature despite the dimensional crossover. In addition, it is predicted through calculations that the SL Cd crystal strongly interacts with oxygen and that the oxidized regions even undergo chemical transformation to form the CdO crystal. In the double-layer CdO crystal resulting from the oxidation of individual Cd layers, the layers are connected to each other with strong covalent bonds, and this structure is a semiconductor with a band gap of 2.10 eV. While the robust metallic structure of the thinnest possible Cd crystal provides flexibility in terms of its use in nanoscale applications, on the other hand, the fact that its electronic properties can be changed by oxidation is important for optoelectronic device applications.
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Submitted 24 January, 2024; v1 submitted 11 October, 2023;
originally announced October 2023.
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Engineering Higher-Order Dirac and Weyl Semimetallic phase in 3D Topolectrical Circuits
Authors:
S. M. Rafi-Ul-Islam,
Zhuo Bin Siu,
Haydar Sahin,
Mansoor B. A. Jalil
Abstract:
We propose a 3D topolectrical (TE) network that can be tuned to realize various higher-order topological gapless and chiral phases. We first study a higher-order Dirac semimetal phase that exhibits a hinge-like Fermi arc linking the Dirac points. This circuit can be extended to host highly tunable first- and second-order Weyl semimetal phases by introducing a non-reciprocal resistive coupling in t…
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We propose a 3D topolectrical (TE) network that can be tuned to realize various higher-order topological gapless and chiral phases. We first study a higher-order Dirac semimetal phase that exhibits a hinge-like Fermi arc linking the Dirac points. This circuit can be extended to host highly tunable first- and second-order Weyl semimetal phases by introducing a non-reciprocal resistive coupling in the x-y plane that breaks time reversal symmetry. The first- and second-order Weyl points are connected by zero-admittance surface and hinge states, respectively. We also study the emergence of first- and second-order chiral modes induced by resistive couplings between similar nodes in the z-direction. These modes respectively occur in the midgap of the surface and hinge admittance bands in our circuit model without the need for any external magnetic field.
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Submitted 27 February, 2024; v1 submitted 20 March, 2023;
originally announced March 2023.
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Impedance responses and size-dependent resonances in topolectrical circuits via the method of images
Authors:
Haydar Sahin,
Zhuo Bin Siu,
S. M. Rafi-Ul-Islam,
Jian Feng Kong,
Mansoor B. A. Jalil,
Ching Hua Lee
Abstract:
Resonances in an electric circuit occur when capacitive and inductive components are present together. Such resonances appear in admittance measurements depending on the circuit's parameters and the driving AC frequency. In this study, we analyze the impedance characteristics of nontrivial topolectrical circuits such as one- and two-dimensional Su-Schrieffer-Heeger circuits and reveal that size-de…
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Resonances in an electric circuit occur when capacitive and inductive components are present together. Such resonances appear in admittance measurements depending on the circuit's parameters and the driving AC frequency. In this study, we analyze the impedance characteristics of nontrivial topolectrical circuits such as one- and two-dimensional Su-Schrieffer-Heeger circuits and reveal that size-dependent anomalous impedance resonances inevitably arise in finite $LC$ circuits. Through the \textit{method of images}, we study how resonance modes in a multi-dimensional circuit array can be nontrivially modified by the reflection and interference of current from the structure and boundaries of the lattice. We derive analytic expressions for the impedance across two corner nodes of various lattice networks with homogeneous and heterogeneous circuit elements. We also derive the irregular dependency of the impedance resonance on the lattice size, and provide integral and dimensionally-reduced expressions for the impedance in three dimensions and above.
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Submitted 18 August, 2023; v1 submitted 12 December, 2022;
originally announced December 2022.
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Valley Hall Effect and Kink States in Topolectrical Circuits
Authors:
S M Rafi-Ul-Islam,
Zhuo Bin Siu,
Haydar Sahin,
Mansoor B. A. Jalil
Abstract:
We investigate the emergence of topological valley Hall and kink states in a two-dimensional topolectrical (TE) model as a result of broken chiral and reflection symmetries. The TE system consists of two segments hosting distinct topological states with opposite signs of the valley Hall index, and separated by a heterojunction. In the practical circuit, the valley Hall index can be flipped between…
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We investigate the emergence of topological valley Hall and kink states in a two-dimensional topolectrical (TE) model as a result of broken chiral and reflection symmetries. The TE system consists of two segments hosting distinct topological states with opposite signs of the valley Hall index, and separated by a heterojunction. In the practical circuit, the valley Hall index can be flipped between the two segments by modulating the onsite potential on the sublattice nodes of the respective segments. The presence of resistive coupling, which introduces non-Hermiticity in the system, subsequently leads to the emergence of gapped and gapless valley and kink states in the admittance spectra. These topological modes can be detected electrically by the impedance readouts of the system which can be correlated to its admittance spectra. Finally, we confirm the robustness of the valley Hall and kink states via realistic LTspice simulation taking into account the tolerance windows and parasitic effects inherent in circuit components. Our study demonstrates the applicability of TE circuit networks as a platform to realize and tune valley-dependent and kink topological phenomena.
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Submitted 5 December, 2022;
originally announced December 2022.
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Symmetry and Variance: Generative Parametric Modelling of Historical Brick Wall Patterns
Authors:
Sevgi Altun,
Mustafa Cem Gunes,
Yusuf H. Sahin,
Alican Mertan,
Gozde Unal,
Mine Ozkar
Abstract:
This study integrates artificial intelligence and computational design tools to extract information from architectural heritage. Photogrammetry-based point cloud models of brick walls from the Anatolian Seljuk period are analysed in terms of the interrelated units of construction, simultaneously considering both the inherent symmetries and irregularities. The real-world data is used as input for a…
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This study integrates artificial intelligence and computational design tools to extract information from architectural heritage. Photogrammetry-based point cloud models of brick walls from the Anatolian Seljuk period are analysed in terms of the interrelated units of construction, simultaneously considering both the inherent symmetries and irregularities. The real-world data is used as input for acquiring the stochastic parameters of spatial relations and a set of parametric shape rules to recreate designs of existing and hypothetical brick walls within the style. The motivation is to be able to generate large data sets for machine learning of the style and to devise procedures for robotic production of such designs with repetitive units.
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Submitted 23 October, 2022;
originally announced October 2022.
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System size dependent topological zero modes in coupled topolectrical chains
Authors:
S M Rafi-Ul-Islam,
Zhuo Bin Siu,
Haydar Sahin,
Ching Hua Lee,
Mansoor B. A. Jalil
Abstract:
In this paper, we demonstrate the emergence and disappearance of topological zero modes (TZMs) in a coupled topolectrical (TE) circuit lattice. Specifically, we consider non-Hermitian TE chains in which TZMs do not occur in the individual uncoupled chains, but emerge when these chains are coupled by inter-chain capacitors. The coupled system hosts TZMs which show size-dependent behaviours and vani…
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In this paper, we demonstrate the emergence and disappearance of topological zero modes (TZMs) in a coupled topolectrical (TE) circuit lattice. Specifically, we consider non-Hermitian TE chains in which TZMs do not occur in the individual uncoupled chains, but emerge when these chains are coupled by inter-chain capacitors. The coupled system hosts TZMs which show size-dependent behaviours and vanish beyond a certain critical size. In addition, the emergence or disappearance of the TZMs in the open boundary condition (OBC) spectra for a given size of the coupled system can be controlled by modulating the signs of its inverse decay length. Analytically, trivial and non-trivial phases of the coupled system can be distinguished by the differing ranks of their corresponding Laplacian matrix. The TE circuit framework enables the physical detection of the TZMs via electrical impedance measurements. Our work establishes the conditions for inducing TZMs and modulating their behavior in coupled TE chains.
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Submitted 10 June, 2022;
originally announced June 2022.
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Anomalous fractal scaling in two-dimensional electric networks
Authors:
Xiao Zhang,
Boxue Zhang,
Haydar Sahin,
Zhuo Bin Siu,
S. M. Rafi-Ul-Islam,
Jian Feng Kong,
Mansoor B. A. Jalil,
Ronny Thomale,
Ching Hua Lee
Abstract:
Much of the qualitative nature of physical systems can be predicted from the way it scales with system size. Contrary to the continuum expectation, we observe a profound deviation from logarithmic scaling in the impedance of a two-dimensional $LC$ circuit network. We find this anomalous impedance contribution to sensitively depend on the number of nodes $N$ in a curious erratic manner, and experim…
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Much of the qualitative nature of physical systems can be predicted from the way it scales with system size. Contrary to the continuum expectation, we observe a profound deviation from logarithmic scaling in the impedance of a two-dimensional $LC$ circuit network. We find this anomalous impedance contribution to sensitively depend on the number of nodes $N$ in a curious erratic manner, and experimentally demonstrate its robustness against perturbations from the contact and parasitic impedance of individual components. This impedance anomaly is traced back to a generalized resonance condition reminiscent of the Harper's equation for electronic lattice transport in a magnetic field, even though our circuit network does not involve magnetic translation symmetry. It exhibits an emergent fractal parametric structure of anomalous impedance peaks for different $N$ that cannot be reconciled with continuum theory and does not correspond to regular waveguide resonant behavior. This anomalous fractal scaling extends to the transport properties of generic systems described by a network Laplacian whenever a resonance frequency scale is simultaneously present.
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Submitted 2 July, 2023; v1 submitted 11 April, 2022;
originally announced April 2022.
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Electronic, Magnetic and Vibrational Properties of Single Layer Aluminum Oxide
Authors:
A. Kutay Ozyurt,
Deniz Molavali,
Hasan Sahin
Abstract:
The structural, magnetic, vibrational and electronic properties of single layer aluminum oxide (AlO2) are investigated by performing state-of-the-art first-principles calculations. Total energy optimization and phonon calculations reveal that aluminum oxide forms a distorted octahedral structure (1T'-AlO2) in its single layer limit. It is also shown that surfaces of 1T'-AlO2 display magnetic behav…
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The structural, magnetic, vibrational and electronic properties of single layer aluminum oxide (AlO2) are investigated by performing state-of-the-art first-principles calculations. Total energy optimization and phonon calculations reveal that aluminum oxide forms a distorted octahedral structure (1T'-AlO2) in its single layer limit. It is also shown that surfaces of 1T'-AlO2 display magnetic behavior originating from the O atoms. While the ferromagnetic (FM) state is the most favorable magnetic order for 1T'-AlO2, transformation to a dynamically stable antiferromagnetic (AFM) state upon a slight distortion in the crystal structure is also possible. It is also shown that Raman activities (350-400 cm^-1) obtained from the vibrational spectrum can be utilized to distinguish the possible magnetic phases of the crystal structure. Electronically, both FM and the AFM phases are semiconductors with an indirect band gap and they can form a type-III vdW heterojunction with graphene-like ultra-thin materials. Moreover, it is predicted that presence of oxygen defects that inevitably occur during synthesis and production do not alter the magnetic state, even at high vacancy density. Apparently, ultra-thin 1T'-AlO2 with its stable crystal structure, semiconducting nature and robust magnetic state is a quite promising material for nanoscale device applications.
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Submitted 8 February, 2022;
originally announced February 2022.
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Edge and Width Dependent Electronic Properties of Nanoribbons of Manganese Oxide
Authors:
Yigit Sozen,
Ugur C. Topkiran,
Hasan Sahin
Abstract:
In the present work, the structural, magnetic, and electronic properties of the two- and one-dimensional honeycomb structures of recently synthesized MnO [Zhang et al. Nat. Commun., 20, 1073-1078 (2021)] are investigated by using first principles calculations. Our calculations show that the single layer 2D MnO crystal has a degenerate antiferromagnetic (AFM) ground state and a relatively less favo…
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In the present work, the structural, magnetic, and electronic properties of the two- and one-dimensional honeycomb structures of recently synthesized MnO [Zhang et al. Nat. Commun., 20, 1073-1078 (2021)] are investigated by using first principles calculations. Our calculations show that the single layer 2D MnO crystal has a degenerate antiferromagnetic (AFM) ground state and a relatively less favorable ferromagnetic (FM) state. In addition, magnetic anisotropy calculations unveil that the easy-axis direction for magnetism originating from unpaired electron states in manganese atoms is normal to the crystal plane. Electronically, while the FM-MnO is a direct semiconductor with a narrow bandgap, AFM phases display large indirect bandgap semiconducting behavior. Moreover, calculations on nanoribbons of MnO reveal that zigzag edged ribbons display metallic bahavior, whereas armchair edged nanoribbons are semiconductors. Magnetically, for both zigzag- or armchair-edged nanoribbons, AFM order perpendicular to the nanoribbon growth direction is found to be favorable over the other AFM and FM orders. Moreover, depending on the edge symmetry and ribbon width, forbidden band gap values of nanoribbons display distinct family behaviors.
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Submitted 27 January, 2022;
originally announced January 2022.
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Uncertainty-Based Dynamic Graph Neighborhoods For Medical Segmentation
Authors:
Ufuk Demir,
Atahan Ozer,
Yusuf H. Sahin,
Gozde Unal
Abstract:
In recent years, deep learning based methods have shown success in essential medical image analysis tasks such as segmentation. Post-processing and refining the results of segmentation is a common practice to decrease the misclassifications originating from the segmentation network. In addition to widely used methods like Conditional Random Fields (CRFs) which focus on the structure of the segment…
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In recent years, deep learning based methods have shown success in essential medical image analysis tasks such as segmentation. Post-processing and refining the results of segmentation is a common practice to decrease the misclassifications originating from the segmentation network. In addition to widely used methods like Conditional Random Fields (CRFs) which focus on the structure of the segmented volume/area, a graph-based recent approach makes use of certain and uncertain points in a graph and refines the segmentation according to a small graph convolutional network (GCN). However, there are two drawbacks of the approach: most of the edges in the graph are assigned randomly and the GCN is trained independently from the segmentation network. To address these issues, we define a new neighbor-selection mechanism according to feature distances and combine the two networks in the training procedure. According to the experimental results on pancreas segmentation from Computed Tomography (CT) images, we demonstrate improvement in the quantitative measures. Also, examining the dynamic neighbors created by our method, edges between semantically similar image parts are observed. The proposed method also shows qualitative enhancements in the segmentation maps, as demonstrated in the visual results.
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Submitted 6 August, 2021;
originally announced August 2021.
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Critical hybridization of skin modes in coupled non-Hermitian chains
Authors:
S M Rafi-Ul-Islam,
Zhuo Bin Siu,
Haydar Sahin,
Ching Hua Lee,
Mansoor B. A. Jalil
Abstract:
Non-Hermitian topological systems exhibit a plethora of unusual topological phenomena that are absent in the Hermitian systems. One of these key features is the extreme eigenstate localization of eigenstates, also known as non-Hermitian skin effect (NHSE), which occurs in open chains. However, many new and peculiar non-Hermitian characteristics of the eigenstates and eigenvlaues that emerge when t…
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Non-Hermitian topological systems exhibit a plethora of unusual topological phenomena that are absent in the Hermitian systems. One of these key features is the extreme eigenstate localization of eigenstates, also known as non-Hermitian skin effect (NHSE), which occurs in open chains. However, many new and peculiar non-Hermitian characteristics of the eigenstates and eigenvlaues that emerge when two such non-Hermitian chains are coupled together remain largely unexplored. Here, we report various new avenues of eigenstate localization in coupled non-Hermitian chains with dissimilar inverse skin lengths in which the NHSE can be switched on and off by the inter-chain coupling amplitude. A very small inter-chain strength causes the NHSE to be present at both ends of an anti-symmetric coupled system because of the weak hybridization of the eigenstates of the individual chains. The eigenspectrum under open boundary conditions (OBC) exhibits a discontinuous jump known as the critical NHSE (CNHSE) as its size increases. However, when the hybridization between eigenstates becomes significant in a system with strong inter-chain coupling, the NHSE and CNHSE vanish. Moreover, a peculiar "half-half skin localization" occurs in composite chains with opposite signs of inverse decay lengths, where half of the eigenstates are exponentially localized at one chain and the remainder of the eigenstates on the other chain. Our results provide a new twist and insights for non-Hermitian phenomena in coupled non-Hermitian systems.
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Submitted 5 August, 2021;
originally announced August 2021.
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Unconventional node voltage accumulation in generalized topolectrical circuits with multiple asymmetric couplings
Authors:
S M Rafi-Ul-Islam,
Zhuo Bin Siu,
Haydar Sahin,
Ching Hua Lee,
Mansoor B. A. Jalil
Abstract:
A non-Hermitian system is characterized by the violation of energy conservation. As a result of unbalanced gain or loss in the forward and backward directions due to non-reciprocal couplings, the eigenmodes of such systems exhibit extreme localization, also known as non-Hermitian skin effect (NHSE). This work explores unconventional scenarios where the interplay of multiple asymmetric couplings ca…
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A non-Hermitian system is characterized by the violation of energy conservation. As a result of unbalanced gain or loss in the forward and backward directions due to non-reciprocal couplings, the eigenmodes of such systems exhibit extreme localization, also known as non-Hermitian skin effect (NHSE). This work explores unconventional scenarios where the interplay of multiple asymmetric couplings can cause the NHSE to vanish, with the admittance spectra taking identical dispersion under open boundary conditions (OBC) and periodic boundary conditions (PBC). This is unlike known non-Hermitian models where the NHSE vanishes only when the non-Hermiticity is turned off. We derive general conditions for the NHSE, with the overall eigenmode localization determined by the geometric mean of the cumulative contributions of all asymmetric coupling segments. In the limit of large unit cells, our results provide a route towards the NHSE caused by asymmetric hopping textures, rather than single asymmetric hoppings alone. Furthermore, our generalized model can be transformed into a square-root lattice simply by tuning the coupling capacitors, where the topological edge states occur at a non-zero admittance, in contrast to the zero-admittance states of conventional topological insulators. We provide explicit electrical circuit setups for realizing our observations, which also extend to other established platforms such as photonics, mechanics, optics and quantum circuits.
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Submitted 3 August, 2021;
originally announced August 2021.
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ODFNet: Using orientation distribution functions to characterize 3D point clouds
Authors:
Yusuf H. Sahin,
Alican Mertan,
Gozde Unal
Abstract:
Learning new representations of 3D point clouds is an active research area in 3D vision, as the order-invariant point cloud structure still presents challenges to the design of neural network architectures. Recent works explored learning either global or local features or both for point clouds, however none of the earlier methods focused on capturing contextual shape information by analysing local…
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Learning new representations of 3D point clouds is an active research area in 3D vision, as the order-invariant point cloud structure still presents challenges to the design of neural network architectures. Recent works explored learning either global or local features or both for point clouds, however none of the earlier methods focused on capturing contextual shape information by analysing local orientation distribution of points. In this paper, we leverage on point orientation distributions around a point in order to obtain an expressive local neighborhood representation for point clouds. We achieve this by dividing the spherical neighborhood of a given point into predefined cone volumes, and statistics inside each volume are used as point features. In this way, a local patch can be represented by not only the selected point's nearest neighbors, but also considering a point density distribution defined along multiple orientations around the point. We are then able to construct an orientation distribution function (ODF) neural network that involves an ODFBlock which relies on mlp (multi-layer perceptron) layers. The new ODFNet model achieves state-of the-art accuracy for object classification on ModelNet40 and ScanObjectNN datasets, and segmentation on ShapeNet S3DIS datasets.
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Submitted 15 July, 2022; v1 submitted 8 December, 2020;
originally announced December 2020.
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A New Distributional Ranking Loss With Uncertainty: Illustrated in Relative Depth Estimation
Authors:
Alican Mertan,
Yusuf Huseyin Sahin,
Damien Jade Duff,
Gozde Unal
Abstract:
We propose a new approach for the problem of relative depth estimation from a single image. Instead of directly regressing over depth scores, we formulate the problem as estimation of a probability distribution over depth and aim to learn the parameters of the distributions which maximize the likelihood of the given data. To train our model, we propose a new ranking loss, Distributional Loss, whic…
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We propose a new approach for the problem of relative depth estimation from a single image. Instead of directly regressing over depth scores, we formulate the problem as estimation of a probability distribution over depth and aim to learn the parameters of the distributions which maximize the likelihood of the given data. To train our model, we propose a new ranking loss, Distributional Loss, which tries to increase the probability of farther pixel's depth being greater than the closer pixel's depth. Our proposed approach allows our model to output confidence in its estimation in the form of standard deviation of the distribution. We achieve state of the art results against a number of baselines while providing confidence in our estimations. Our analysis show that estimated confidence is actually a good indicator of accuracy. We investigate the usage of confidence information in a downstream task of metric depth estimation, to increase its performance.
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Submitted 14 October, 2020;
originally announced October 2020.
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Prevalence of oxygen defects in an in-plane anisotropic transition metal dichalcogenide
Authors:
Ryan Plumadore,
Mehmet Baskurt,
Justin Boddison-Chouinard,
Gregory Lopinski,
Mohsen Modaresi,
Pawel Potasz,
Pawel Hawrylak,
Hasan Sahin,
Francois M. Peeters,
Adina Luican-Mayer
Abstract:
Atomic scale defects in semiconductors enable their technological applications and realization of novel quantum states. Using scanning tunneling microscopy and spectroscopy complemented by ab-initio calculations we determine the nature of defects in the anisotropic van der Waals layered semiconductor ReS$_2$. We demonstrate the in-plane anisotropy of the lattice by directly visualizing chains of r…
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Atomic scale defects in semiconductors enable their technological applications and realization of novel quantum states. Using scanning tunneling microscopy and spectroscopy complemented by ab-initio calculations we determine the nature of defects in the anisotropic van der Waals layered semiconductor ReS$_2$. We demonstrate the in-plane anisotropy of the lattice by directly visualizing chains of rhenium atoms forming diamond-shaped clusters. Using scanning tunneling spectroscopy we measure the semiconducting gap in the density of states. We reveal the presence of lattice defects and by comparison of their topographic and spectroscopic signatures with ab initio calculations we determine their origin as oxygen atoms absorbed at lattice point defect sites. These results provide an atomic-scale view into the semiconducting transition metal dichalcogenides, paving the way toward understanding and engineering their properties.
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Submitted 9 October, 2020;
originally announced October 2020.
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EfficientSeg: An Efficient Semantic Segmentation Network
Authors:
Vahit Bugra Yesilkaynak,
Yusuf H. Sahin,
Gozde Unal
Abstract:
Deep neural network training without pre-trained weights and few data is shown to need more training iterations. It is also known that, deeper models are more successful than their shallow counterparts for semantic segmentation task. Thus, we introduce EfficientSeg architecture, a modified and scalable version of U-Net, which can be efficiently trained despite its depth. We evaluated EfficientSeg…
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Deep neural network training without pre-trained weights and few data is shown to need more training iterations. It is also known that, deeper models are more successful than their shallow counterparts for semantic segmentation task. Thus, we introduce EfficientSeg architecture, a modified and scalable version of U-Net, which can be efficiently trained despite its depth. We evaluated EfficientSeg architecture on Minicity dataset and outperformed U-Net baseline score (40% mIoU) using the same parameter count (51.5% mIoU). Our most successful model obtained 58.1% mIoU score and got the fourth place in semantic segmentation track of ECCV 2020 VIPriors challenge.
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Submitted 9 October, 2020; v1 submitted 14 September, 2020;
originally announced September 2020.
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EndoSLAM Dataset and An Unsupervised Monocular Visual Odometry and Depth Estimation Approach for Endoscopic Videos: Endo-SfMLearner
Authors:
Kutsev Bengisu Ozyoruk,
Guliz Irem Gokceler,
Gulfize Coskun,
Kagan Incetan,
Yasin Almalioglu,
Faisal Mahmood,
Eva Curto,
Luis Perdigoto,
Marina Oliveira,
Hasan Sahin,
Helder Araujo,
Henrique Alexandrino,
Nicholas J. Durr,
Hunter B. Gilbert,
Mehmet Turan
Abstract:
Deep learning techniques hold promise to develop dense topography reconstruction and pose estimation methods for endoscopic videos. However, currently available datasets do not support effective quantitative benchmarking. In this paper, we introduce a comprehensive endoscopic SLAM dataset consisting of 3D point cloud data for six porcine organs, capsule and standard endoscopy recordings as well as…
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Deep learning techniques hold promise to develop dense topography reconstruction and pose estimation methods for endoscopic videos. However, currently available datasets do not support effective quantitative benchmarking. In this paper, we introduce a comprehensive endoscopic SLAM dataset consisting of 3D point cloud data for six porcine organs, capsule and standard endoscopy recordings as well as synthetically generated data. A Panda robotic arm, two commercially available capsule endoscopes, two conventional endoscopes with different camera properties, and two high precision 3D scanners were employed to collect data from 8 ex-vivo porcine gastrointestinal (GI)-tract organs. In total, 35 sub-datasets are provided with 6D pose ground truth for the ex-vivo part: 18 sub-dataset for colon, 12 sub-datasets for stomach and 5 sub-datasets for small intestine, while four of these contain polyp-mimicking elevations carried out by an expert gastroenterologist. Synthetic capsule endoscopy frames from GI-tract with both depth and pose annotations are included to facilitate the study of simulation-to-real transfer learning algorithms. Additionally, we propound Endo-SfMLearner, an unsupervised monocular depth and pose estimation method that combines residual networks with spatial attention module in order to dictate the network to focus on distinguishable and highly textured tissue regions. The proposed approach makes use of a brightness-aware photometric loss to improve the robustness under fast frame-to-frame illumination changes. To exemplify the use-case of the EndoSLAM dataset, the performance of Endo-SfMLearner is extensively compared with the state-of-the-art. The codes and the link for the dataset are publicly available at https://github.com/CapsuleEndoscope/EndoSLAM. A video demonstrating the experimental setup and procedure is accessible through https://www.youtube.com/watch?v=G_LCe0aWWdQ.
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Submitted 1 October, 2020; v1 submitted 30 June, 2020;
originally announced June 2020.
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Kagome silicene: a novel exotic form of two-dimensional epitaxial silicon
Authors:
Y. Sassa,
F. O. L. Johansson,
A. Lindblad,
M. G. Yazdi,
K. Simonov,
J. Weissenrieder,
M. Muntwiler,
F. Iyikanat,
H. Sahin,
T. Angot,
E. Salomon,
G. Le Lay
Abstract:
Since the discovery of graphene, intensive efforts have been made in search of novel two-dimensional (2D) materials. Decreasing the materials dimensionality to their ultimate thinness is a promising route to unveil new physical phenomena, and potentially improve the performance of devices. Among recent 2D materials, analogs of graphene, the group IV elements have attracted much attention for their…
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Since the discovery of graphene, intensive efforts have been made in search of novel two-dimensional (2D) materials. Decreasing the materials dimensionality to their ultimate thinness is a promising route to unveil new physical phenomena, and potentially improve the performance of devices. Among recent 2D materials, analogs of graphene, the group IV elements have attracted much attention for their unexpected and tunable physical properties. Depending on the growth conditions and substrates, several structures of silicene, germanene, and stanene can be formed. Here, we report the synthesis of a Kagome lattice of silicene on aluminum (111) substrates. We provide evidence of such an exotic 2D Si allotrope through scanning tunneling microscopy (STM) observations, high-resolution core-level (CL) and angle-resolved photoelectron spectroscopy (ARPES) measurements, along with Density Functional Theory calculations.
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Submitted 30 January, 2020;
originally announced January 2020.
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Two-dimensional covalent crystals by chemical conversion of thin van der Waals materials
Authors:
Vishnu Sreepal,
Mehmet Yagmurcukardes,
Kalangi S. Vasu,
Daniel J. Kelly,
Sarah F. R. Taylor,
Vasyl G. Kravets,
Zakhar Kudrynskyi,
Zakhar D. Kovalyuk,
Amalia Patanè,
Alexander N. Grigorenko,
Sarah J. Haigh,
Christopher Hardacre,
Laurence Eaves,
Hasan Sahin,
Andre K. Geim,
Francois M. Peeters,
Rahul R. Nair
Abstract:
Most of the studied two-dimensional (2D) materials have been obtained by exfoliation of van der Waals crystals. Recently, there has been growing interest in fabricating synthetic 2D crystals which have no layered bulk analogues. These efforts have been focused mainly on the surface growth of molecules in high vacuum. Here, we report an approach to making 2D crystals of covalent solids by chemical…
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Most of the studied two-dimensional (2D) materials have been obtained by exfoliation of van der Waals crystals. Recently, there has been growing interest in fabricating synthetic 2D crystals which have no layered bulk analogues. These efforts have been focused mainly on the surface growth of molecules in high vacuum. Here, we report an approach to making 2D crystals of covalent solids by chemical conversion of van der Waals layers. As an example, we use 2D indium selenide (InSe) obtained by exfoliation and converted it by direct fluorination into indium fluoride (InF3), which has a non-layered, rhombohedral structure and therefore cannot be possibly obtained by exfoliation. The conversion of InSe into InF3 is found to be feasible for thicknesses down to three layers of InSe, and the obtained stable InF3 layers are doped with selenium. We study this new 2D material by optical, electron transport and Raman measurements and show that it is a semiconductor with a direct bandgap of 2.2 eV, exhibiting high optical transparency across the visible and infrared spectral ranges. We also demonstrate the scalability of our approach by chemical conversion of large-area, thin InSe laminates obtained by liquid exfoliation into InF3 films. The concept of chemical conversion of cleavable thin van der Waals crystals into covalently-bonded non-cleavable ones opens exciting prospects for synthesizing a wide variety of novel atomically thin covalent crystals.
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Submitted 20 August, 2019;
originally announced August 2019.
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Green Fabrication of Lanthanide doped Hydroxide-based Phosphors: Y(OH)3:Eu3+ Nanoparticles for White Light Generation
Authors:
Tugrul Guner,
Anilcan Kus,
Mehmet Ozcan,
Aziz Genc,
Hasan Sahin,
Mustafa M. Demir
Abstract:
Phosphors serve as color conversion layers to generate white light with varying optical features including CRI, CCT, and luminous efficacy. However, they have been produced in harsh synthesis conditions such as high temperature, high pressure, and/or employing a huge amount of solvents. In this work, facile, water-based and a rapid method has been proposed to fabricate lanthanide doped hydroxide-b…
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Phosphors serve as color conversion layers to generate white light with varying optical features including CRI, CCT, and luminous efficacy. However, they have been produced in harsh synthesis conditions such as high temperature, high pressure, and/or employing a huge amount of solvents. In this work, facile, water-based and a rapid method has been proposed to fabricate lanthanide doped hydroxide-based phosphors. In this sense, submicrometer-sized Y(OH)3:Eu3+ particles, as red phosphor, were synthesized in water at ambient conditions in <60 min reaction time. The doping ratio is controlled from 2.5 to 20% in terms of mole. Meanwhile, first principle calculations were also performed on Y(OH)3:Eu3+ to understand the preferable doping scenario and its optoelectronic properties. As an application, these fabricated red phosphors were integrated into PDMS/YAG:Ce3+ composite to generate white light. The resulting white light showed a remarkable improvement (~24%) for LER, a slight reduction of CCT (from 3900K to 3600K), and an unchanged CRI (~60) as the amount of Y(OH)3:Eu3+ increases.
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Submitted 16 January, 2019; v1 submitted 23 November, 2018;
originally announced November 2018.
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An Adaptive Tabu Search Algorithm for Market Clearing Problem in Turkish Day-Ahead Market
Authors:
Nermin Elif Kurt,
H. Bahadir Sahin,
Kürşad Derinkuyu
Abstract:
In this study, we focus on the market clearing problem of Turkish day-ahead electricity market. We propose a mathematical model by extending the variety of bid types for different price regions. The commercial solvers may not find any feasible solution for the proposed problem in some instances within the given time limits. Hence, we design an adaptive tabu search (ATS) algorithm to solve the prob…
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In this study, we focus on the market clearing problem of Turkish day-ahead electricity market. We propose a mathematical model by extending the variety of bid types for different price regions. The commercial solvers may not find any feasible solution for the proposed problem in some instances within the given time limits. Hence, we design an adaptive tabu search (ATS) algorithm to solve the problem. ATS discretizes continuous search space arising from the flow variables. Our method has adaptive radius and it achieves backtracking by a commercial solver. Then, we compare the performance of ATS with a heuristic decomposition method from the literature by using synthetic data sets. We evaluate the performances of the algorithms with respect to their solution times and surplus differences. ATS performs better in most of the sets.
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Submitted 26 September, 2018;
originally announced September 2018.
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Multi Modal Convolutional Neural Networks for Brain Tumor Segmentation
Authors:
Mehmet Aygün,
Yusuf Hüseyin Şahin,
Gözde Ünal
Abstract:
In this work, we propose a multi-modal Convolutional Neural Network (CNN) approach for brain tumor segmentation. We investigate how to combine different modalities efficiently in the CNN framework.We adapt various fusion methods, which are previously employed on video recognition problem, to the brain tumor segmentation problem,and we investigate their efficiency in terms of memory and performance…
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In this work, we propose a multi-modal Convolutional Neural Network (CNN) approach for brain tumor segmentation. We investigate how to combine different modalities efficiently in the CNN framework.We adapt various fusion methods, which are previously employed on video recognition problem, to the brain tumor segmentation problem,and we investigate their efficiency in terms of memory and performance.Our experiments, which are performed on BRATS dataset, lead us to the conclusion that learning separate representations for each modality and combining them for brain tumor segmentation could increase the performance of CNN systems.
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Submitted 20 September, 2018; v1 submitted 17 September, 2018;
originally announced September 2018.
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Electronic and Vibrational Properties of PbI 2 : From Bulk to Monolayer
Authors:
Mehmet Yagmurcukardes,
Francois M. Peeters,
Hasan Sahin
Abstract:
Using first-principles calculations, we study the dependence of the electronic and vibrational properties of multi-layered PbI 2 crystals on the number of layers and focus on the electronic-band structure and the Raman spectrum. Electronic-band structure calculations reveal that the direct or indirect semiconducting behavior of PbI 2 is strongly influenced by the number of layers. We find that at…
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Using first-principles calculations, we study the dependence of the electronic and vibrational properties of multi-layered PbI 2 crystals on the number of layers and focus on the electronic-band structure and the Raman spectrum. Electronic-band structure calculations reveal that the direct or indirect semiconducting behavior of PbI 2 is strongly influenced by the number of layers. We find that at 3L-thickness there is a direct-to-indirect band gap transition (from bulk-to-monolayer). It is shown that in the Raman spectrum two prominent peaks, A 1g and E g , exhibit phonon hardening with increasing number of layers due to the inter-layer van der Waals interaction. Moreover, the Raman activity of the A 1g mode significantly increases with increasing number of layers due to the enhanced out-of-plane dielectric constant in the few-layer case. We further characterize rigid-layer vibrations of low-frequency inter-layer shear (C) and breathing (LB) modes in few-layer PbI 2 . A reduced mono-atomic (linear) chain model (LCM) provides a fairly accurate picture of the number of layers dependence of the low-frequency modes and it is shown also to be a powerful tool to study the inter-layer coupling strength in layered PbI 2 .
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Submitted 24 July, 2018;
originally announced July 2018.
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Introduction to the Physics of Silicene and other 2D Materials
Authors:
S. Cahangirov,
H. Sahin,
G. Le Lay,
A. Rubio
Abstract:
This concise book offers an essential introduction and reference guide for the many newcomers to the field of physics of elemental 2D materials. Silicene and related materials are currently among the most actively studied materials, especially following the first experimental synthesis on substrates in 2012. Accordingly, this primer introduces and reviews the most crucial developments regarding si…
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This concise book offers an essential introduction and reference guide for the many newcomers to the field of physics of elemental 2D materials. Silicene and related materials are currently among the most actively studied materials, especially following the first experimental synthesis on substrates in 2012. Accordingly, this primer introduces and reviews the most crucial developments regarding silicene from both theoretical and experimental perspectives. At the same time the reader is guided through the extensive body of relevant foundational literature. The text starts with a brief history of silicene, followed by a comparison of the bonding nature in silicon versus carbon atoms. Here, a simple but robust framework is established to help the reader follow the concepts presented throughout the book. The book then presents the atomic and electronic structure of free-standing silicene, followed by an account of the experimental realization of silicene on substrates. This topic is subsequently developed further to discuss various reconstructions that silicene acquires due to interactions with the substrate and how such effects are mirrored in the electronic properties. Next the book examines the dumbbell structure that is the key to understanding the growth mechanism and atomic structure of multilayer silicene. Last but not least, it addresses similar effects in other elemental 2D materials from group IV (germanene, stanane), group V (phosphorene) and group III (borophene), as well as transition metal dichalcogenides and other compositions, so as to provide a general comparative overview of their electronic properties.
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Submitted 25 April, 2018;
originally announced April 2018.
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Generative Adversarial Training for MRA Image Synthesis Using Multi-Contrast MRI
Authors:
Sahin Olut,
Yusuf Huseyin Sahin,
Ugur Demir,
Gozde Unal
Abstract:
Magnetic Resonance Angiography (MRA) has become an essential MR contrast for imaging and evaluation of vascular anatomy and related diseases. MRA acquisitions are typically ordered for vascular interventions, whereas in typical scenarios, MRA sequences can be absent in the patient scans. This motivates the need for a technique that generates inexistent MRA from existing MR multi-contrast, which co…
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Magnetic Resonance Angiography (MRA) has become an essential MR contrast for imaging and evaluation of vascular anatomy and related diseases. MRA acquisitions are typically ordered for vascular interventions, whereas in typical scenarios, MRA sequences can be absent in the patient scans. This motivates the need for a technique that generates inexistent MRA from existing MR multi-contrast, which could be a valuable tool in retrospective subject evaluations and imaging studies. In this paper, we present a generative adversarial network (GAN) based technique to generate MRA from T1-weighted and T2-weighted MRI images, for the first time to our knowledge. To better model the representation of vessels which the MRA inherently highlights, we design a loss term dedicated to a faithful reproduction of vascularities. To that end, we incorporate steerable filter responses of the generated and reference images inside a Huber function loss term. Extending the well- established generator-discriminator architecture based on the recent PatchGAN model with the addition of steerable filter loss, the proposed steerable GAN (sGAN) method is evaluated on the large public database IXI. Experimental results show that the sGAN outperforms the baseline GAN method in terms of an overlap score with similar PSNR values, while it leads to improved visual perceptual quality.
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Submitted 12 April, 2018;
originally announced April 2018.
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Strain Mapping In Single-Layer 2D Crystals Via Raman Activity
Authors:
M. Yagmurcukardes,
C. Bacaksiz,
E. Unsal,
B. Akbali,
R. T. Senger,
H. Sahin
Abstract:
By performing density functional theory-based ab-initio calculations, Raman active phonon modes of novel single-layer two-dimensional (2D) materials and the effect of in-plane biaxial strain on the peak frequencies and corresponding activities of the Raman active modes are calculated. Our findings confirm the Raman spectrum of the unstrained 2D crystals and provide expected variations in the Raman…
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By performing density functional theory-based ab-initio calculations, Raman active phonon modes of novel single-layer two-dimensional (2D) materials and the effect of in-plane biaxial strain on the peak frequencies and corresponding activities of the Raman active modes are calculated. Our findings confirm the Raman spectrum of the unstrained 2D crystals and provide expected variations in the Raman active modes of the crystals under in-plane biaxial strain. The results are summarized as follows; (i) frequencies of the phonon modes soften (harden) under applied tensile (compressive) strains, (ii) the response of the Raman activities to applied strain for the in-plane and out-of-plane vibrational modes have opposite trends, thus, the built-in strains in the materials can be monitored by tracking the relative activities of those modes, (iii) in particular, the A-peak in single-layer Si and Ge disappear under a critical tensile strain, (iv) especially in mono and di- atomic single-layers, the shift of the peak frequencies is stronger indication of the strain rather than the change in Raman activities, (v) Raman active modes of single-layer ReX 2 (X=S, Se) are almost irresponsive to the applied strain. Strain-induced modifications in the Raman spectrum of 2D materials in terms of the peak positions and the relative Raman activities of the modes could be a convenient tool for characterization.
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Submitted 3 March, 2018;
originally announced March 2018.
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CsPbBr3 Perovskites: Theoretical and Experimental Investigation on Water-Assisted Transition From Nanowire Formation to Degradation
Authors:
Baris Akbali,
Gokhan Topcu,
Tugrul Guner,
Mehmet Ozcan,
Mustafa Muammer Demir,
Hasan Sahin
Abstract:
Recent advances in colloidal synthesis methods have led to increased research focus on halide perovskites. Due to highly ionic crystal structure of perovskite materials, stability issue pops up especially against polar solvents such as water. In this study, we investigate water-driven structural evolution of CsPbBr3 by performing experiments and state-of-the-art first-principles calculations. It i…
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Recent advances in colloidal synthesis methods have led to increased research focus on halide perovskites. Due to highly ionic crystal structure of perovskite materials, stability issue pops up especially against polar solvents such as water. In this study, we investigate water-driven structural evolution of CsPbBr3 by performing experiments and state-of-the-art first-principles calculations. It is seen that while optical image shows the gradual degradation of yellowish-colored CsPbBr3 structure under daylight, UV illumination reveals that the degradation of crystals takes place in two steps; transition from blue-emitting to green-emitting structure and and then transition from green-emitting phase to complete degradation. We found that as-synthesized CsPbBr3 NWs emit blue light under 254 nm UV source and before the degradation, first CsPbBr3 NWs undergoes a water-driven structural transition to form large bundles. It is also seen that formation of such bundles provide longer-term environmental stability. In addition theoretical calculations revealed how strong is the interaction of water molecules with ligands and surfaces of CsPbBr3 and provide atomistic-level explanation to transition from ligand-covered nanowires to bundle formation. Further interaction of green-light-emitting bundles with water causes complete degradation of CsPbBr3 and photoluminescence signal is entirely quenched. Moreover, Raman and XRD measurements revealed that completely degraded regions are decomposed to PbBr2 and CsBr precursors. We believe that findings of this study may provide further insight into the degradation mechanism of CsPbBr3 perovskite by water.
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Submitted 2 March, 2018;
originally announced March 2018.
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Empirical comparison of three models for determining market clearing prices in Turkish day-ahead electricity market
Authors:
Gökhan Ceyhan,
Nermin Elif Kurt,
H. Bahadir Sahin,
Kürşad Derinkuyu
Abstract:
Bidders in day-ahead electricity markets want to sell/buy electricity when their bids generate positive surplus and not to take an action when the reverse holds. However, non-convexities in these markets cause conflicts between the actions that the bidders want to take and the actual market results. In this work, we investigate the non-convex market clearing problem of Turkish market operator and…
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Bidders in day-ahead electricity markets want to sell/buy electricity when their bids generate positive surplus and not to take an action when the reverse holds. However, non-convexities in these markets cause conflicts between the actions that the bidders want to take and the actual market results. In this work, we investigate the non-convex market clearing problem of Turkish market operator and propose three different rule sets. The first rule set allows both rejection of bids with positive surplus and acceptance of bids with negative surplus. The second and the third sets only allow one of these conflicted cases. By using total surplus maximization as the objective, we formulate three models and statistically explore their performance with the real data taken from Turkish market operator.
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Submitted 1 December, 2017;
originally announced December 2017.
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Stable Monolayer alpha-Phase of CdTe: Strain-Dependent Properties
Authors:
Elif Unsal,
Ramazan T. Senger,
Hasan Sahin
Abstract:
CdTe is a well known and widely used binary compound for optoelectronic applications. In this study, we propose the thinnest, free standing monolayer of CdTe which holds the tetragonal-PbO (alpha-PbO) symmetry. The structural, electronic, vibrational and strain dependent properties are investigated by means of first principles calculations based on density functional theory. Our results demonstrat…
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CdTe is a well known and widely used binary compound for optoelectronic applications. In this study, we propose the thinnest, free standing monolayer of CdTe which holds the tetragonal-PbO (alpha-PbO) symmetry. The structural, electronic, vibrational and strain dependent properties are investigated by means of first principles calculations based on density functional theory. Our results demonstrate that the monolayer alpha-CdTe is a dynamically stable and mechanically flexible material. It is found that the thinnest monolayer crystal of CdTe is a semiconductor with a direct band gap of 1.95 eV, which corresponds to red light in the visible spectrum. Moreover, it is found that the band gap can be tunable under biaxial strain. With its strain-controllable direct band gap within the visible spectrum, stable alpha-phase of monolayer CdTe is a suitable candidate for optoelectronic device applications.
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Submitted 16 November, 2017;
originally announced November 2017.
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Stable Ultra-thin CdTe Crystal: A Robust Direct Gap Semiconductor
Authors:
Fadil Iyikanat,
Baris Akbali,
Jun Kang,
R. Tugrul Senger,
Yusuf Selamet,
Hasan Sahin
Abstract:
Employing density functional theory based calculations, we investigate structural, vibrational and strain-dependent electronic properties of an ultra-thin CdTe crystal structure that can be de- rived from its bulk counterpart. It is found that this ultra-thin crystal has an 8-atom primitive unit cell with considerable surface reconstructions. Dynamic stability of the structure is predicted based o…
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Employing density functional theory based calculations, we investigate structural, vibrational and strain-dependent electronic properties of an ultra-thin CdTe crystal structure that can be de- rived from its bulk counterpart. It is found that this ultra-thin crystal has an 8-atom primitive unit cell with considerable surface reconstructions. Dynamic stability of the structure is predicted based on its calculated vibrational spectrum. Electronic band structure calculations reveal that both electrons and holes in single layer CdTe possess anisotropic in-plane masses and mobilities. Moreover, we show that the ultra-thin CdTe has some interesting electromechanical features, such as strain-dependent anisotropic variation of the band gap value, and its rapid increase under per- pendicular compression. The direct band gap semiconducting nature of the ultra-thin CdTe crystal remains unchanged under all types of applied strain. With a robust and moderate direct band gap, single-layer CdTe is a promising material for nanoscale strain dependent device applications.
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Submitted 12 November, 2017;
originally announced November 2017.
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Thinning CsPb2Br5 Perovskite Down to Monolayers: Cs-dependent Stability
Authors:
Fadil Iyikanat,
Emre Sari,
Hasan Sahin
Abstract:
Using first-principles density functional theory calculations, we systematically investigate the structural, electronic and vibrational properties of bulk and potential single-layer structures of perovskite-like CsPb2Br5 crystal. It is found that while Cs atoms have no effect on the electronic structure, their presence is essential for the formation of stable CsPb2Br5 crystals. Calculated vibratio…
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Using first-principles density functional theory calculations, we systematically investigate the structural, electronic and vibrational properties of bulk and potential single-layer structures of perovskite-like CsPb2Br5 crystal. It is found that while Cs atoms have no effect on the electronic structure, their presence is essential for the formation of stable CsPb2Br5 crystals. Calculated vibrational spectra of the crystal reveal that not only the bulk form but also the single-layer forms of CsPb2Br5 are dynamically stable. Predicted single-layer forms can exhibit either semiconducting or metallic character. Moreover, modification of the structural, electronic and magnetic properties of single-layer CsPb2Br5 upon formation of vacancy defects is investigated. It is found that the formation of Br vacancy (i) has the lowest formation energy, (ii) significantly changes the electronic structure, and (iii) leads to ferromagnetic ground state in the single-layer CsPb2Br5 . However, the formation of Pb and Cs vacancies leads to p-type doping of the single-layer structure. Results reported herein reveal that single-layer CsPb2Br5 crystal is a novel stable perovskite with enhanced functionality and a promising candidate for nanodevice applications.
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Submitted 24 October, 2017;
originally announced October 2017.
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A Morphology-aware Network for Morphological Disambiguation
Authors:
Eray Yildiz,
Caglar Tirkaz,
H. Bahadir Sahin,
Mustafa Tolga Eren,
Ozan Sonmez
Abstract:
Agglutinative languages such as Turkish, Finnish and Hungarian require morphological disambiguation before further processing due to the complex morphology of words. A morphological disambiguator is used to select the correct morphological analysis of a word. Morphological disambiguation is important because it generally is one of the first steps of natural language processing and its performance…
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Agglutinative languages such as Turkish, Finnish and Hungarian require morphological disambiguation before further processing due to the complex morphology of words. A morphological disambiguator is used to select the correct morphological analysis of a word. Morphological disambiguation is important because it generally is one of the first steps of natural language processing and its performance affects subsequent analyses. In this paper, we propose a system that uses deep learning techniques for morphological disambiguation. Many of the state-of-the-art results in computer vision, speech recognition and natural language processing have been obtained through deep learning models. However, applying deep learning techniques to morphologically rich languages is not well studied. In this work, while we focus on Turkish morphological disambiguation we also present results for French and German in order to show that the proposed architecture achieves high accuracy with no language-specific feature engineering or additional resource. In the experiments, we achieve 84.12, 88.35 and 93.78 morphological disambiguation accuracy among the ambiguous words for Turkish, German and French respectively.
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Submitted 13 February, 2017;
originally announced February 2017.
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Automatically Annotated Turkish Corpus for Named Entity Recognition and Text Categorization using Large-Scale Gazetteers
Authors:
H. Bahadir Sahin,
Caglar Tirkaz,
Eray Yildiz,
Mustafa Tolga Eren,
Ozan Sonmez
Abstract:
Turkish Wikipedia Named-Entity Recognition and Text Categorization (TWNERTC) dataset is a collection of automatically categorized and annotated sentences obtained from Wikipedia. We constructed large-scale gazetteers by using a graph crawler algorithm to extract relevant entity and domain information from a semantic knowledge base, Freebase. The constructed gazetteers contains approximately 300K e…
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Turkish Wikipedia Named-Entity Recognition and Text Categorization (TWNERTC) dataset is a collection of automatically categorized and annotated sentences obtained from Wikipedia. We constructed large-scale gazetteers by using a graph crawler algorithm to extract relevant entity and domain information from a semantic knowledge base, Freebase. The constructed gazetteers contains approximately 300K entities with thousands of fine-grained entity types under 77 different domains. Since automated processes are prone to ambiguity, we also introduce two new content specific noise reduction methodologies. Moreover, we map fine-grained entity types to the equivalent four coarse-grained types: person, loc, org, misc. Eventually, we construct six different dataset versions and evaluate the quality of annotations by comparing ground truths from human annotators. We make these datasets publicly available to support studies on Turkish named-entity recognition (NER) and text categorization (TC).
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Submitted 9 February, 2017; v1 submitted 8 February, 2017;
originally announced February 2017.
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$h$-AlN-Mg(OH)$_{2}$ vdW Bilayer Heterostructure: Tuning the excitonic characteristics
Authors:
C. Bacaksiz,
A. Dominguez,
A. Rubio,
R. T. Senger,
H. Sahin
Abstract:
Motivated by recent studies that reported the successful synthesis of monolayer Mg(OH)$_{2}$ [Suslu \textit{et al.}, Sci. Rep. \textbf{6}, 20525 (2016)] and hexagonal (\textit{h}-)AlN [Tsipas \textit{et al}., Appl. Phys. Lett. \textbf{103}, 251605 (2013)], we investigate structural, electronic, and optical properties of vertically stacked $h$-AlN and Mg(OH)$_{2}$, through \textit{ab initio} densit…
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Motivated by recent studies that reported the successful synthesis of monolayer Mg(OH)$_{2}$ [Suslu \textit{et al.}, Sci. Rep. \textbf{6}, 20525 (2016)] and hexagonal (\textit{h}-)AlN [Tsipas \textit{et al}., Appl. Phys. Lett. \textbf{103}, 251605 (2013)], we investigate structural, electronic, and optical properties of vertically stacked $h$-AlN and Mg(OH)$_{2}$, through \textit{ab initio} density-functional theory (DFT), many-body quasi-particle calculations within the GW approximation, and the Bethe-Salpeter equation (BSE). It is obtained that the bilayer heterostructure prefers the $AB^{\prime}$ stacking having direct band gap at the $Γ$ with Type-II band alignment in which the valance band maximum and conduction band minimum originate from different layer. Regarding the optical properties, the imaginary part of the dielectric function of the individual layers and hetero-bilayer are investigated. The hetero-bilayer possesses excitonic peaks which appear only after the construction of the hetero-bilayer. The lowest three exciton peaks are detailedly analyzed by means of band decomposed charge density and the oscillator strength. Furthermore, the wave function calculation shows that the first peak of the hetero-bilayer originates from spatially indirect exciton where the electron and hole localized at $h$-AlN and Mg(OH)$_{2}$, respectively, which is important for the light harvesting applications.
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Submitted 3 February, 2017;
originally announced February 2017.
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Quantum Transport Characteristics of Lateral pn-Junction of Single Layer TiS3
Authors:
F. Iyikanat,
R. T. Senger,
F. M. Peeters,
H. Sahin
Abstract:
Using density functional theory and nonequilibrium Greens functions-based methods we investigated the electronic and transport properties of monolayer TiS3 pn-junction. We constructed a lateral pn-junction in monolayer TiS3 by using Li and F adatoms. An applied bias voltage caused significant variability in the electronic and transport properties of the TiS3 pn-junction. In addition, spin dependen…
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Using density functional theory and nonequilibrium Greens functions-based methods we investigated the electronic and transport properties of monolayer TiS3 pn-junction. We constructed a lateral pn-junction in monolayer TiS3 by using Li and F adatoms. An applied bias voltage caused significant variability in the electronic and transport properties of the TiS3 pn-junction. In addition, spin dependent current-voltage characteristics of the constructed TiS3 pn-junction were analyzed. Important device characteristics were found such as negative differential resistance and rectifying diode behaviors for spin-polarized currents in the TiS3 pn-junction. These prominent conduction properties of TiS3 pn-junction offer remarkable opportunities for the design of nanoelectronic devices based on a recently synthesized single-layered material.
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Submitted 10 October, 2016;
originally announced October 2016.
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Electronic, Optical and Mechanical Properties of Silicene Derivatives
Authors:
Mehmet Yagmurcukardes,
Cihan Bacaksiz,
Fadıl Iyikanat,
Engin Torun,
R. Tugrul Senger,
Francois M. Peeters,
Hasan Sahin
Abstract:
Successful isolation of graphene from graphite opened a new era for material science and con- densed matter physics. Due to this remarkable achievement, there has been an immense interest to synthesize new two dimensional materials and to investigate their novel physical properties. Silicene, form of Si atoms arranged in a buckled honeycomb geometry, has been successfully synthesized and emerged a…
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Successful isolation of graphene from graphite opened a new era for material science and con- densed matter physics. Due to this remarkable achievement, there has been an immense interest to synthesize new two dimensional materials and to investigate their novel physical properties. Silicene, form of Si atoms arranged in a buckled honeycomb geometry, has been successfully synthesized and emerged as a promising material for nanoscale device applications. However, the major obstacle for using silicene in electronic applications is the lack of a band gap similar to the case of graphene. Therefore, tuning the electronic properties of silicene by using chemical functionalization methods such as hydrogenation, halogenation or oxidation has been a focus of interest in silicene research. In this paper, we review the recent studies on the structural, electronic, optical and mechanical proper- ties of silicene-derivative structures. Since these derivatives have various band gap energies, they are promising candidates for the next generation of electronic and optoelectronic device applications.
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Submitted 10 August, 2016;
originally announced August 2016.
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Single Layer PbI2 : Hydrogenation-driven Reconstructions
Authors:
C. Bacaksiz,
H. Sahin
Abstract:
By performing density functional theory-based calculations, we investigate how hydrogen atom interacts with the surfaces of monolayer PbI2 and how one and two side hydrogenation modify its structural, electronic, and magnetic properties. Firstly, it was shown that T-phase of single layer PbI2 is energetically favorable than the H-phase. It is found that hydrogenation of its surfaces is possible th…
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By performing density functional theory-based calculations, we investigate how hydrogen atom interacts with the surfaces of monolayer PbI2 and how one and two side hydrogenation modify its structural, electronic, and magnetic properties. Firstly, it was shown that T-phase of single layer PbI2 is energetically favorable than the H-phase. It is found that hydrogenation of its surfaces is possible through the adsorption of each hydrogen on iodine sites. While H atoms do not form a particular bonding-type at low concentration, by increasing the number of hydrogenated I-sites well-ordered hydrogen patterns are formed on PbI2 matrix. In addition, we found that for one-side hydrogenation, the structure forms a (2x1) Jahn-Teller type distorted structure and band gap is dramatically reduced compared to hydrogen-free single layer PbI2 . Moreover, in the case of full-hydrogenation, the structure also possesses another (2x2) reconstruction with reduction in the band gap. Easy-tunable electronic and structural properties of single layer PbI2 by hydrogenation reveal its potential use in nanoscale semiconducting device applications.
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Submitted 21 July, 2016;
originally announced July 2016.
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Mg(OH)2 -WS2 Heterobilayer: Electric Field Tunable Bandgap Crossover
Authors:
M. Yagmurcukardes,
E. Torun,
R. T. Senger,
F. M. Peeters,
H. Sahin
Abstract:
Magnesium hydroxide (Mg(OH)2) has a layered brucite-like structure in its bulk form and was recently isolated as a new member of 2D monolayer materials. We investigated the electronic and optical properties of monolayer crystals of Mg(OH)2 and WS2 and their possible heterobilayer structure by means of first principles calculations. It was found that both monolayers of Mg(OH)2 and WS 2 are direct-g…
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Magnesium hydroxide (Mg(OH)2) has a layered brucite-like structure in its bulk form and was recently isolated as a new member of 2D monolayer materials. We investigated the electronic and optical properties of monolayer crystals of Mg(OH)2 and WS2 and their possible heterobilayer structure by means of first principles calculations. It was found that both monolayers of Mg(OH)2 and WS 2 are direct-gap semiconductors and these two monolayers form a typical van der Waals heterostructure with a weak interlayer interaction and a type-II band alignment with a staggered gap that spatially seperates electrons and holes. We also showed that an out-of-plane electric field induces a transition from a staggered to a straddling type heterojunction. Moreover, by solving the Bethe-Salpeter equation on top of single shot G0 W0 calculations, we show that the oscillator strength of the intralayer excitons of the heterostructure is an order of magnitude larger than the oscillator strength of the interlayer excitons. Because of the staggered interfacial gap and the field- tunable energy band structure, the Mg(OH)2 -WS2 heterobilayer can become an important candidate for various optoelectronic device applications in nanoscale.
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Submitted 17 March, 2016;
originally announced March 2016.
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Computing Optical Properties of Ultra-thin Crystals
Authors:
H. Sahin,
E. Torun,
C. Bacaksiz,
S. Horzum,
J. Kang,
R. T. Senger,
F. M. Peeters
Abstract:
An overview is given of recent advances in experimental and theoretical understanding of optical properties of ultra-thin crystal structures (graphene, phosphorene, silicene, MoS2, MoSe2 , WS2 , WSe2 , h-AlN, h-BN, fluorographene, graphane). Ultra-thin crystals are atomically-thick layered crystals that have unique properties which differ from their 3D counterpart. Because of the difficulties in t…
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An overview is given of recent advances in experimental and theoretical understanding of optical properties of ultra-thin crystal structures (graphene, phosphorene, silicene, MoS2, MoSe2 , WS2 , WSe2 , h-AlN, h-BN, fluorographene, graphane). Ultra-thin crystals are atomically-thick layered crystals that have unique properties which differ from their 3D counterpart. Because of the difficulties in the synthesis of few-atom-thick crystal structures, which are thought to be the main building blocks of future nanotechnology, reliable theoretical predictions of their electronic, vibrational and optical properties are of great importance. Recent studies revealed the reliable predictive power of existing theoretical approaches based on density functional theory (DFT).
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Submitted 29 February, 2016;
originally announced February 2016.
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Bilayer SnS$_{2}$: Easy-tunable Stacking Sequence by Charging and Loading Pressure
Authors:
C. Bacaksiz,
S. Cahangirov,
A. Rubio,
R. T. Senger,
F. M. Peeters,
H. Sahin
Abstract:
Employing density functional theory-based methods, we investigate monolayer and bilayer structures of hexagonal SnS$_{2}$, which is recently synthesized monolayer metal dichalcogenide. Comparison of 1H and 1T phases of monolayer SnS$_{2}$ confirms the ground state to be the 1T phase. In its bilayer structure we examine different stacking configurations of the two layers. It is found that the inter…
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Employing density functional theory-based methods, we investigate monolayer and bilayer structures of hexagonal SnS$_{2}$, which is recently synthesized monolayer metal dichalcogenide. Comparison of 1H and 1T phases of monolayer SnS$_{2}$ confirms the ground state to be the 1T phase. In its bilayer structure we examine different stacking configurations of the two layers. It is found that the interlayer coupling in bilayer SnS$_{2}$ is weaker than that of typical transition-metal dichalcogenides (TMDs) so that alternative stacking orders have similar structural parameters and they are separated with low energy barriers. Possible signature of the stacking order in SnS$_{2}$ bilayer has been sought in the calculated absorbance and reflectivity spectra. We also study the effects of the external electric field, charging, and loading pressure on the characteristic properties of bilayer SnS$_{2}$. It is found that (i) the electric field increases the coupling between the layers at its prefered stacking order, so the barrier height increases, (ii) the bang gap value can be tuned by the external E-field and under sufficient E-field, the bilayer SnS$_{2}$ can become semi-metal, (iii) the most favorable stacking order can be switched by charging and (iv) a loading pressure exceeding 3 GPa changes the stacking order. E-field tunable bandgap and easy-tunable stacking sequence of SnS$_{2}$ layers make this 2D crystal structure a good candidate for field effect transistor and nanoscale lubricant applications.
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Submitted 4 February, 2016;
originally announced February 2016.
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Optical Properties of GaS-Ca(OH)$_2$ bilayer heterostructure
Authors:
E. Torun,
H. Sahin,
F. M. Peeters
Abstract:
Finding novel atomically-thin heterostructures and understanding their characteristic properties are critical for developing better nanoscale optoelectronic devices. In this study, we investigate the electronic and optical properties of GaS-Ca(OH)$_2$ heterostructure using first-principle calculations. The band gap of the GaS-Ca(OH)$_2$ heterostructure is significantly reduced when compared with t…
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Finding novel atomically-thin heterostructures and understanding their characteristic properties are critical for developing better nanoscale optoelectronic devices. In this study, we investigate the electronic and optical properties of GaS-Ca(OH)$_2$ heterostructure using first-principle calculations. The band gap of the GaS-Ca(OH)$_2$ heterostructure is significantly reduced when compared with those of the isolated constituent layers. Our calculations show that the GaS-Ca(OH)$_2$ heterostructure is a type-II heterojunction which can be used to separate photoinduced charge carriers where electrons are localized in GaS and holes in the Ca(OH)$_2$ layer. This leads to spatially indirect excitons which are important for solar energy and optoelectronic applications due to their long lifetime. By solving the Bethe-Salpeter equation on top of single shot GW calculation (G$_0$W$_0$) the dielectric function and optical oscillator strength of the constituent monolayers and the heterostructure are obtained. The oscillator strength of the optical transition for GaS monolayer is an order of magnitude larger than Ca(OH)$_2$ monolayer. We also found that the calculated optical spectra of different stacking types of the heterostructure show dissimilarities, although their electronic structures are rather similar. This prediction can be used to determine the stacking type of ultra-thin heterostructures.
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Submitted 24 January, 2016;
originally announced January 2016.
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Pentagonal Monolayer Crystals of Carbon, Boron Nitride, and Silver Azide
Authors:
M. Yagmurcukardes,
H. Sahin,
J. Kang,
E. Torun,
F. M. Peeters,
R. T. Senger
Abstract:
In this study we present a theoretical investigation of structural, electronic and mechanical properties of pentagonal monolayers of carbon (p-graphene), boron nitride (p-B$_{2}$N$_{4}$ and p-B$_{4}$N$_{2}$) and silver azide (p-AgN$_{3}$) by performing state-of-the-art first principles calculations. Our total energy calculations suggest feasible formation of monolayer crystal structures composed e…
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In this study we present a theoretical investigation of structural, electronic and mechanical properties of pentagonal monolayers of carbon (p-graphene), boron nitride (p-B$_{2}$N$_{4}$ and p-B$_{4}$N$_{2}$) and silver azide (p-AgN$_{3}$) by performing state-of-the-art first principles calculations. Our total energy calculations suggest feasible formation of monolayer crystal structures composed entirely of pentagons. In addition, electronic band dispersion calculations indicate that while p-graphene and p-AgN$_{3}$ are semiconductors with indirect bandgaps, p-BN structures display metallic behavior. We also investigate the mechanical properties (in-plane stiffness and the Poisson's ratio) of four different pentagonal structures under uniaxial strain. p-graphene is found to have the highest stiffness value and the corresponding Poisson's ratio is found to be negative. Similarly, p-B$_{2}$N$_{4}$ and p-B$_{4}$N$_{2}$ have negative Poisson's ratio values. On the other hand, the p-AgN$_{3}$ has a large and positive Poisson's ratio. In dynamical stability tests based on calculated phonon spectra of these pentagonal monolayers, we find that only p-graphene and p-B$_{2}$N$_{4}$ are stable, but p-AgN$_{3}$ and p-B$_{4}$N$_{2}$ are vulnerable against vibrational excitations.
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Submitted 14 September, 2015;
originally announced October 2015.
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Electronic and Magnetic Properties of 1T-TiSe2 Nanoribbons
Authors:
H. D. Ozaydin,
H. Sahin,
J. Kang,
F. M. Peeters,
R. T. Senger
Abstract:
Motivated by the recent synthesis of single layer TiSe2 , we used state-of-the-art density functional theory calculations, to investigate the structural and electronic properties of zigzag and armchair- edged nanoribbons of this material. Our analysis reveals that, differing from ribbons of other ultra-thin materials such as graphene, TiSe2 nanoribbons have some distinctive properties. The electro…
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Motivated by the recent synthesis of single layer TiSe2 , we used state-of-the-art density functional theory calculations, to investigate the structural and electronic properties of zigzag and armchair- edged nanoribbons of this material. Our analysis reveals that, differing from ribbons of other ultra-thin materials such as graphene, TiSe2 nanoribbons have some distinctive properties. The electronic band gap of the nanoribbons decreases exponentially with the width and vanishes for ribbons wider than 20 Angstroms. For ultranarrow zigzag-edged nanoribbons we find odd-even oscillations in the band gap width, although their band structures show similar features. Moreover, our detailed magnetic-ground-state analysis reveals that zigzag and armchair edged ribbons have nonmagnetic ground states. Passivating the dangling bonds with hydrogen at the edges of the structures influences the band dispersion. Our results shed light on the characteristic properties of T phase nanoribbons of similar crystal structures.
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Submitted 11 September, 2015;
originally announced September 2015.
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Stable Half-Metallic Monolayers of FeCl$_2$
Authors:
E. Torun,
H. Sahin,
S. K. Singh,
F. M. Peeters
Abstract:
The structural, electronic and magnetic properties of single layers of Iron Dichloride (FeCl$_{2}$) were calculated using first principles calculations. We found that the 1T phase of the single layer FeCl$_{2}$ is 0.17 eV/unit cell more favorable than its 1H phase. The structural stability is confirmed by phonon calculations. We found that 1T-FeCl$_{2}$ possess three Raman-active (130, 179 and 237…
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The structural, electronic and magnetic properties of single layers of Iron Dichloride (FeCl$_{2}$) were calculated using first principles calculations. We found that the 1T phase of the single layer FeCl$_{2}$ is 0.17 eV/unit cell more favorable than its 1H phase. The structural stability is confirmed by phonon calculations. We found that 1T-FeCl$_{2}$ possess three Raman-active (130, 179 and 237 cm$^{-1}$) and one Infrared-active (279 cm$^{-1}$) phonon branches. The electronic band dispersion of the 1T-FeCl$_{2}$ is calculated using both GGA-PBE and DFT-HSE06 functionals. Both functionals reveal that the 1T-FeCl$_{2}$ has a half-metallic ground state with a Curie temperature of 17 K.
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Submitted 30 July, 2015;
originally announced July 2015.
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Ag and Au Atoms Intercalated in Bilayer Heterostructures of Transition Metal Dichalcogenides and Graphene
Authors:
F. Iyikanat,
H. Sahin,
R. T. Senger,
F. M. Peeters
Abstract:
The diffusive motion of metal nanoparticles Au and Ag on monolayer and between bilayer heterostructures of transition metal dichalcogenides and graphene are investigated in the framework of density functional theory. We found that the minimum energy barriers for diffusion and the possibility of cluster formation depend strongly on both the type of nanoparticle and the type of monolayers and bilaye…
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The diffusive motion of metal nanoparticles Au and Ag on monolayer and between bilayer heterostructures of transition metal dichalcogenides and graphene are investigated in the framework of density functional theory. We found that the minimum energy barriers for diffusion and the possibility of cluster formation depend strongly on both the type of nanoparticle and the type of monolayers and bilayers. Moreover, the tendency to form clusters of Ag and Au can be tuned by creating various bilayers. Tunability of the diffusion characteristics of adatoms in van der Waals heterostructures holds promise for controllable growth of nanostructures.
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Submitted 29 May, 2015;
originally announced May 2015.
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Vacancy Formation and Oxidation Characteristics of Single Layer TiS3
Authors:
F. Iyikanat,
H. Sahin,
R. T. Senger,
F. M. Peeters
Abstract:
The structural, electronic, and magnetic properties of pristine, defective, and oxidized monolayer TiS3 are investigated using first-principles calculations in the framework of density functional theory. We found that a single layer of TiS3 is a direct band gap semiconductor, and the bonding nature of the crystal is fundamentally different from other transition metal chalcogenides. The negatively…
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The structural, electronic, and magnetic properties of pristine, defective, and oxidized monolayer TiS3 are investigated using first-principles calculations in the framework of density functional theory. We found that a single layer of TiS3 is a direct band gap semiconductor, and the bonding nature of the crystal is fundamentally different from other transition metal chalcogenides. The negatively charged surfaces of single layer TiS3 makes this crystal a promising material for lubrication applications. The formation energies of possible vacancies, i.e. S, Ti, TiS, and double S, are investigated via total energy optimization calculations. We found that the formation of a single S vacancy was the most likely one among the considered vacancy types. While a single S vacancy results in a nonmagnetic, semiconducting character with an enhanced band gap, other vacancy types induce metallic behavior with spin polarization of 0.3-0.8 μB. The reactivity of pristine and defective TiS3 crystals against oxidation was investigated using conjugate gradient calculations where we considered the interaction with atomic O, O2, and O3. While O2 has the lowest binding energy with 0.05-0.07 eV, O3 forms strong bonds stable even at moderate temperatures. The strong interaction (3.9-4.0 eV) between atomic O and TiS3 results in dissociative adsorption of some O-containing molecules. In addition, the presence of S-vacancies enhances the reactivity of the surface with atomic O, whereas it had a negative effect on the reactivity with O2 and O3 molecules.
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Submitted 4 May, 2015;
originally announced May 2015.
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Hexagonal AlN: Dimensional-Crossover-Driven Bandgap Transition
Authors:
C. Bacaksiz,
H. Sahin,
H. D. Ozaydin,
S. Horzum,
R. T. Senger,
F. M. Peeters
Abstract:
Motivated by a recent experiment that reported the successful synthesis of hexagonal (h) AlN [Tsipas et al. Appl. Phys. Lett. 103, 251605 (2013)] we investigate structural, electronic and vibrational properties of bulk, bilayer and monolayer structures of h-AlN by using first-principles calculations. We show that the hexagonal phase of the bulk h-AlN is a stable direct-bandgap semiconductor. Calcu…
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Motivated by a recent experiment that reported the successful synthesis of hexagonal (h) AlN [Tsipas et al. Appl. Phys. Lett. 103, 251605 (2013)] we investigate structural, electronic and vibrational properties of bulk, bilayer and monolayer structures of h-AlN by using first-principles calculations. We show that the hexagonal phase of the bulk h-AlN is a stable direct-bandgap semiconductor. Calculated phonon spectrum displays a rigid-layer shear mode at 274 cm-1 and an Eg mode at 703 cm-1 which are observable by Raman measurements. In addition, single layer h-AlN is an indirect-bandgap semiconductor with a nonmagnetic ground state. For the bilayer structure, AA' type stacking is found to be the most favorable one and interlayer interaction is strong. While N-layered h-AlN is an indirect bandgap semiconductor for N=1-10, we predict that thicker structures (N>10) have a direct-bandgap at the Gamma-point. The number-of-layer-dependent bandgap transitions in h-AlN is interesting in that it is significantly different from the indirect-to- direct crossover obtained in the transition metal dichalcogenides.
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Submitted 20 February, 2015;
originally announced February 2015.