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Illuminating trap density trends in amorphous oxide semiconductors with ultrabroadband photoconduction
Authors:
George W. Mattson,
Kyle T. Vogt,
John F. Wager,
Matt W. Graham
Abstract:
Under varying growth and device processing conditions, ultrabroadband photoconduction (UBPC) reveals strongly evolving trends in the defect density of states (DoS) for amorphous oxide semiconductor thin-film transistors (TFTs). Spanning the wide bandgap of amorphous InGaZnO$_x$ (a-IGZO), UBPC identifies seven oxygen-deep donor vacancy peaks that are independently confirmed by energetically matchin…
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Under varying growth and device processing conditions, ultrabroadband photoconduction (UBPC) reveals strongly evolving trends in the defect density of states (DoS) for amorphous oxide semiconductor thin-film transistors (TFTs). Spanning the wide bandgap of amorphous InGaZnO$_x$ (a-IGZO), UBPC identifies seven oxygen-deep donor vacancy peaks that are independently confirmed by energetically matching to photoluminescence emission peaks. The sub-gap DoS from 15 different types of a-IGZO TFTs all yield similar DoS, except only back-channel etch TFTs can have a deep acceptor peak seen at 2.2 eV below the conduction band mobility edge. This deep acceptor is likely a zinc vacancy, evidenced by trap density which becomes 5-6x larger when TFT wet-etch methods are employed. Certain DoS peaks are strongly enhanced for TFTs with active channel processing damage caused by plasma exposure. While Ar implantation and He plasma processing damage are similar, Ar plasma yields more disorder showing a 2x larger valence-band Urbach energy and two orders of magnitude increase in the deep oxygen vacancy trap density. Changing the growth conditions of a-IGZO also impacts the DoS, with zinc-rich TFTs showing much poorer electrical performance compared to 1:1:1 molar ratio a-IGZO TFTs owing to the former having a ~10xlarger oxygen vacancy trap density. Finally, hydrogen is found to behave as a donor in amorphous indium tin gallium zinc oxide TFTs.
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Submitted 19 January, 2023;
originally announced January 2023.
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High symmetry anthradithiophene molecular packing motifs promote thermally-activated singlet fission
Authors:
Gina Mayonado,
Kyle T. Vogt,
Jonathan D. B. Van Schenck,
Liangdong Zhu,
John Anthony,
Oksana Ostroverkhova,
Matt W. Graham
Abstract:
When considering the optimal molecular packing to realize charge multiplication in organic photovoltaic materials, subtle changes in intermolecular charge transfer (CT) coupling can strongly modulate singlet fission. To understand why certain packing morphologies are more conducive to charge multiplication by triplet pair (TT) formation, we measure the diffraction-limited transient absorption (TA)…
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When considering the optimal molecular packing to realize charge multiplication in organic photovoltaic materials, subtle changes in intermolecular charge transfer (CT) coupling can strongly modulate singlet fission. To understand why certain packing morphologies are more conducive to charge multiplication by triplet pair (TT) formation, we measure the diffraction-limited transient absorption (TA) response from four single-crystal functionalized derivatives of fluorinated anthradithiophene: diF R-ADT (R = TES, TSBS, TDMS, TBDMS). diF TES-ADT and diF TDMS-ADT both exhibit 2D brickwork packing structures, diF TSBS-ADT adopts a 1D sandwich-herringbone packing structure, and diF TBDMS-ADT exhibits a 1D twisted-columnar packing structure. When brickwork or twisted-columnar single crystals are resonantly probed parallel to their charge transfer (CT)-axis projections, the TA signal is dominated by a rising component on the picosecond timescale (rate $k_{TT}$) attributed to TT state population. When probed orthogonal to the CT-axis, we instead recover the falling TA kinetics of singlet state depletion at rate, $k_{A}$. The rising to falling rate ratio estimates the TT formation efficiency, $ε_{TT}$ = $k_{TT}/k_A$ relative to exciton self-trapping. $ε_{TT}$ ranged from near unity in diF TES-ADT to 84% in diF TDMS-ADT. Interestingly, diF TSBS-ADT crystals only manifest falling kinetics of CT-mediated self-trapping and singlet state depletion. Singlet fission is prohibitive in diF TSBS-ADT crystals owing to its lower symmetry sandwich herringbone packing that leads to $S_1$ to CT-state energy separation that is ~3x larger than in other packings. Collectively, these results highlight optimal packing configurations that either enhance or completely suppress CT-mediated TT-pair formation.
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Submitted 9 January, 2022;
originally announced January 2022.
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Hydrogen incorporation into amorphous indium gallium zinc oxide thin-film transistors
Authors:
George W. Mattson,
Kyle T. Vogt,
John F. Wager,
Matt W. Graham
Abstract:
Within the subgap of amorphous oxide semiconductors like amorphous indium gallium zinc oxide (a-IGZO) are donor-like and acceptor-like states that control the operational physics of optically transparent thin-film transistors (TFTs). Hydrogen incorporation into the channel layer of a top-gate a-IGZO TFT exists as an electron donor that causes an observed negative shift in the drain current-gate vo…
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Within the subgap of amorphous oxide semiconductors like amorphous indium gallium zinc oxide (a-IGZO) are donor-like and acceptor-like states that control the operational physics of optically transparent thin-film transistors (TFTs). Hydrogen incorporation into the channel layer of a top-gate a-IGZO TFT exists as an electron donor that causes an observed negative shift in the drain current-gate voltage ($\mathrm{I_{D} - V_{G}}$) transfer curve turn-on voltage. Normally, hydrogen is thought to create shallow electronic states just below the conduction band mobility edge, with the donor ionization state controlled by equilibrium thermodynamics involving the position of the Fermi level with respect to the donor ionization energy. However, hydrogen does not behave as a normal donor as revealed by the subgap density of states (DoS) measured by the photoconduction response of top-gate a-IGZO TFTs to within 0.3 eV of the CBM edge. Specifically, the DoS shows a subgap peak above the valence band mobility edge growing at the same rate that $\mathrm{I_{D} - V_{G}}$ transfer curve measurements suggest that hydrogen was incorporated into the channel layer. Such hydrogen donor behavior in a-IGZO is anomalous and can be understood as follows: Non-bonded hydrogen ionization precedes its incorporation into the a-IGZO network as a bonded species. Ionized hydrogen bonds to a charged oxygen-on-an-oxygen-site anion, resulting in the formation of a defect complex denoted herein as, $\mathrm{{[{O_{O}^{2-}}{H^+}]}^{1-}}$. Formation of an $\mathrm{{[{O_{O}^{2-}}{H^+}]}^{1-}}$ defect complex creates a spectrally-broad ($\sim$0.3 eV FWHM) distribution of electronic states observed in the bandgap centered at 0.4 eV above the valence band mobility edge.
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Submitted 16 November, 2021;
originally announced November 2021.
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Ultrafast photocurrent and absorption microscopy of few-layer TMD devices isolate rate-limiting dynamics driving fast and efficient photoresponse
Authors:
Kyle T. Vogt,
Su-Fei Shi,
Feng Wang,
Matt W. Graham
Abstract:
Despite inherently poor interlayer conductivity, photodetectors made from few-layer devices of 2D transition metal dichalcogenides (TMDs) such as WSe$_2$ and MoS$_2$ can still yield a desirably fast ($\leq$90 ps) and efficient ($ε$$>$40\%) photoresponse. By combining ultrafast photocurrent (U-PC) and transient absorption (TA) microscopy, the competing electronic escape and recombination rates are…
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Despite inherently poor interlayer conductivity, photodetectors made from few-layer devices of 2D transition metal dichalcogenides (TMDs) such as WSe$_2$ and MoS$_2$ can still yield a desirably fast ($\leq$90 ps) and efficient ($ε$$>$40\%) photoresponse. By combining ultrafast photocurrent (U-PC) and transient absorption (TA) microscopy, the competing electronic escape and recombination rates are unambiguously identified in otherwise complex kinetics. Both the U-PC and TA response of WSe$_2$ yield matching interlayer electronic escape times that accelerate from 1.6 ns to 86 ns with applied $E$-field to predict the maximum device PC-efficiency realized of $\sim$44\%. The slope of the escape rates versus $E$-field suggests out-of-plane electron and hole mobilities of 0.129 and 0.031 cm$^2$/V$s$ respectively. Above $\sim$10$^{11}$ photons/cm$^{2}$ incident flux, defect-assisted Auger scattering greatly decreases efficiency by trapping carriers at vacancy defects. Both TA and PC spectra identify a metal-vacancy sub-gap peak with $\sim$5.6 ns lifetime as a primary trap capturing carriers as they hop between layers. Synchronous TA and U-PC microscopy show the\ net PC collected is modelled by a kinetic rate-law of electronic escape competing against the linear and nonlinear Auger recombination rates. This simple rate-model further predicts the PC-based dynamics, nonlinear amplitude and efficiency, $ε$ over a 10$^5$ range of incident photon flux in few-layer WSe$_2$ and MoS$_2$ devices.
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Submitted 30 March, 2020;
originally announced March 2020.
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Ultrabroadband Density of States of Amorphous In-Ga-Zn-O
Authors:
Kyle T. Vogt,
Christopher E. Malmberg,
Jacob C. Buchanan,
George W. Mattson,
G. Mirek Brandt,
Dylan B. Fast,
Paul H. -Y. Cheong,
John F. Wager,
Matt W. Graham
Abstract:
The sub-gap density of states of amorphous indium gallium zinc oxide ($a$-IGZO) is obtained using the ultrabroadband photoconduction (UBPC) response of thin-film transistors (TFTs). Density functional theory simulations classify the origin of the measured sub-gap density of states peaks as a series of donor-like oxygen vacancy states and acceptor-like Zn vacancy states. Donor peaks are found both…
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The sub-gap density of states of amorphous indium gallium zinc oxide ($a$-IGZO) is obtained using the ultrabroadband photoconduction (UBPC) response of thin-film transistors (TFTs). Density functional theory simulations classify the origin of the measured sub-gap density of states peaks as a series of donor-like oxygen vacancy states and acceptor-like Zn vacancy states. Donor peaks are found both near the conduction band and deep in the sub-gap, with peak densities of $10^{17}-10^{18}$ cm$^{-3}$eV$^{-1}$. Two deep acceptor-like metal vacancy peaks with peak densities in the range of $10^{18}$ cm$^{-3}$eV$^{-1}$ and lie adjacent to the valance band Urbach tail region at 2.0 to 2.5 eV below the conduction band edge. By applying detailed charge balance, we show increasing the density of metal vacancy deep-acceptors strongly shifts the $a$-IGZO TFT threshold voltage to more positive values. Photoionization (h$ν$ > 2.0 eV) of metal vacancy acceptors is one cause of transfer curve hysteresis in $a$-IGZO TFTs owing to longer recombination lifetimes as they get captured into acceptor-like vacancies.
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Submitted 3 July, 2020; v1 submitted 14 October, 2019;
originally announced October 2019.
