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Vibrational modes as the origin of dielectric loss at 0.27$\unicode{x2013}$100 THz in a-SiC:H
Authors:
B. T. Buijtendorp,
A. Endo,
W. Jellema,
K. Karatsu,
K. Kouwenhoven,
D. Lamers,
A. J. van der Linden,
K. Rostem,
M. Veen,
E. J. Wollack,
J. J. A. Baselmans,
S. Vollebregt
Abstract:
Low-loss deposited dielectrics are beneficial for the advancement of superconducting integrated circuits for astronomy. In the microwave band ($\mathrm{\sim}$1$\unicode{x2013}$10 GHz) the cryogenic and low-power dielectric loss is dominated by two-level systems. However, the origin of the loss in the millimeter-submillimeter band ($\mathrm{\sim}$0.1$\unicode{x2013}$1 THz) is not understood. We mea…
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Low-loss deposited dielectrics are beneficial for the advancement of superconducting integrated circuits for astronomy. In the microwave band ($\mathrm{\sim}$1$\unicode{x2013}$10 GHz) the cryogenic and low-power dielectric loss is dominated by two-level systems. However, the origin of the loss in the millimeter-submillimeter band ($\mathrm{\sim}$0.1$\unicode{x2013}$1 THz) is not understood. We measured the loss of hydrogenated amorphous SiC (a-SiC:H) films in the 0.27$\unicode{x2013}$100 THz range using superconducting microstrip resonators and Fourier-transform spectroscopy. The agreement between the loss data and a Maxwell-Helmholtz-Drude dispersion model suggests that vibrational modes above 10 THz dominate the loss in the a-SiC:H above 200 GHz.
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Submitted 24 May, 2024; v1 submitted 22 May, 2024;
originally announced May 2024.
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Quantifying stress distribution in ultra-large graphene drums through mode shape imaging
Authors:
Ali Sarafraz,
Hanqing Liu,
Katarina Cvetanović,
Marko Spasenović,
Sten Vollebregt,
Tomas Manzaneque Garcia,
Peter G. Steeneken,
Farbod Alijani,
Gerard J. Verbiest
Abstract:
Suspended drums made of 2D materials hold potential for sensing applications. However, the industrialization of these applications is hindered by significant device-to-device variations presumably caused by non-uniform stress distributions induced by the fabrication process. Here we introduce a new methodology to determine the stress distribution from their mechanical resonance frequencies and cor…
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Suspended drums made of 2D materials hold potential for sensing applications. However, the industrialization of these applications is hindered by significant device-to-device variations presumably caused by non-uniform stress distributions induced by the fabrication process. Here we introduce a new methodology to determine the stress distribution from their mechanical resonance frequencies and corresponding mode shapes as measured by a laser Doppler vibrometer (LDV). To avoid limitations posed by the optical resolution of the LDV, we leverage a unique manufacturing process to create ultra-large graphene drums with diameters of up to 1000 um. We solve the inverse problem of a Föppl--von Kármán plate model by an iterative procedure to obtain the stress distribution within the drums from the experimental data. Our results show that the generally used uniform pre-tension assumption overestimates the pre-stress value, exceeding the averaged stress obtained by more than 47%. Moreover, it is is found that the reconstructed stress distributions are bi-axial, which likely originates from the transfer process. The introduced metholodogy allows one to estimate the tension distribution in drum resonators from their mechanical response and thereby paves the way for linking the used fabrication processes to the resulting device performance.
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Submitted 2 November, 2023; v1 submitted 1 November, 2023;
originally announced November 2023.
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Ultra-sensitive graphene membranes for microphone applications
Authors:
Gabriele Baglioni,
Roberto Pezone,
Sten Vollebregt,
Katarina Cvetanovic,
Marko Spasenovic,
Dejan Todorovic,
Hanqing Liu,
Gerard J. Verbiest,
Herre S. J. van der Zant,
y,
Peter G. Steeneken
Abstract:
Microphones exploit the motion of suspended membranes to detect sound waves. Since the microphone performance can be improved by reducing the thickness and mass of its sensing membrane, graphene-based microphones are expected to outperform state-of-the-art microelectromechanical (MEMS) microphones and allow further miniaturization of the device. Here, we present a laser vibrometry study of the aco…
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Microphones exploit the motion of suspended membranes to detect sound waves. Since the microphone performance can be improved by reducing the thickness and mass of its sensing membrane, graphene-based microphones are expected to outperform state-of-the-art microelectromechanical (MEMS) microphones and allow further miniaturization of the device. Here, we present a laser vibrometry study of the acoustic response of suspended multilayer graphene membranes for microphone applications. We address performance parameters relevant for acoustic sensing, including mechanical sensitivity, limit of detection and nonlinear distortion, and discuss the trade-offs and limitations in the design of graphene microphones. We demonstrate superior mechanical sensitivities of the graphene membranes, reaching more than 2 orders of magnitude higher compliances than commercial MEMS devices, and report a limit of detection as low as 15 dBSPL, which is 10 - 15 dB lower than that featured by current MEMS microphones.
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Submitted 7 November, 2022;
originally announced November 2022.
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Hydrogenated Amorphous Silicon Carbide: A Low-loss Deposited Dielectric for Microwave to Submillimeter Wave Superconducting Circuits
Authors:
B. T. Buijtendorp,
S. Vollebregt,
K. Karatsu,
D. J. Thoen,
V. Murugesan,
K. Kouwenhoven,
S. Hähnle,
J. J. A. Baselmans,
A. Endo
Abstract:
Low-loss deposited dielectrics will benefit superconducting devices such as integrated superconducting spectrometers, superconducting qubits and kinetic inductance parametric amplifiers. Compared with planar structures, multi-layer structures such as microstrips are more compact and eliminate radiation loss at high frequencies. Multi-layer structures are most easily fabricated with deposited diele…
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Low-loss deposited dielectrics will benefit superconducting devices such as integrated superconducting spectrometers, superconducting qubits and kinetic inductance parametric amplifiers. Compared with planar structures, multi-layer structures such as microstrips are more compact and eliminate radiation loss at high frequencies. Multi-layer structures are most easily fabricated with deposited dielectrics, which typically exhibit higher dielectric loss than crystalline dielectrics. We measured the sub-kelvin and low-power microwave and mm-submm wave dielectric loss of hydrogenated amorphous silicon carbide (a-SiC:H), using a superconducting chip with NbTiN/a-SiC:H/NbTiN microstrip resonators. We deposited the a-SiC:H by plasma-enhanced chemical vapor deposition at a substrate temperature of 400°C. The a-SiC:H has a mm-submm loss tangent ranging from $0.80 \pm 0.01 \times 10^{-4}$ to $1.43 \pm 0.04 \times 10^{-4}$ in the range of 270 to 385 GHz. The microwave loss tangent is $3.2 \pm 0.2 \times 10^{-5}$. These are the lowest low-power sub-kelvin loss tangents that have been reported for microstrip resonators at mm-submm and microwave frequencies. We observe that the loss tangent increases with frequency. The a-SiC:H films are free of blisters and have low stress: $-$20 MPa compressive at 200 nm thickness to 60 MPa tensile at 1000 nm thickness.
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Submitted 7 October, 2021;
originally announced October 2021.
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Characterization of low-loss hydrogenated amorphous silicon films for superconducting resonators
Authors:
Bruno T. Buijtendorp,
Juan Bueno,
David J. Thoen,
Vignesh Murugesan,
Paolo M. Sberna,
Jochem J. A. Baselmans,
Sten Vollebregt,
Akira Endo
Abstract:
Superconducting resonators used in millimeter-submillimeter astronomy would greatly benefit from deposited dielectrics with a small dielectric loss. We deposited hydrogenated amorphous silicon films using plasma-enhanced chemical vapor deposition, at substrate temperatures of 100°C, 250°C and 350°C. The measured void volume fraction, hydrogen content, microstructure parameter, and bond-angle disor…
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Superconducting resonators used in millimeter-submillimeter astronomy would greatly benefit from deposited dielectrics with a small dielectric loss. We deposited hydrogenated amorphous silicon films using plasma-enhanced chemical vapor deposition, at substrate temperatures of 100°C, 250°C and 350°C. The measured void volume fraction, hydrogen content, microstructure parameter, and bond-angle disorder are negatively correlated with the substrate temperature. All three films have a loss tangent below $10^{-5}$ for a resonator energy of $10^5$ photons, at 120 mK and 4-7 GHz. This makes these films promising for microwave kinetic inductance detectors and on-chip millimeter-submilimeter filters.
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Submitted 14 December, 2020;
originally announced December 2020.
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Low-friction, wear-resistant, and electrically homogeneous multilayer graphene grown by chemical vapor deposition on molybdenum
Authors:
Borislav Vasić,
Uroš Ralević,
Katarina Cvetanović-Zobenica,
Milče M. Smiljanić,
Radoš Gajić,
Marko Spasenović,
Sten Vollebregt
Abstract:
Chemical vapour deposition (CVD) is a promising method for producing large-scale graphene (Gr). Nevertheless, microscopic inhomogeneity of Gr grown on traditional metal substrates such as copper or nickel results in a spatial variation of Gr properties due to long wrinkles formed when the metal substrate shrinks during the cooling part of the production cycle. Recently, molybdenum (Mo) has emerged…
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Chemical vapour deposition (CVD) is a promising method for producing large-scale graphene (Gr). Nevertheless, microscopic inhomogeneity of Gr grown on traditional metal substrates such as copper or nickel results in a spatial variation of Gr properties due to long wrinkles formed when the metal substrate shrinks during the cooling part of the production cycle. Recently, molybdenum (Mo) has emerged as an alternative substrate for CVD growth of Gr, mainly due to a better matching of the thermal expansion coefficient of the substrate and Gr. We investigate the quality of multilayer Gr grown on Mo and the relation between Gr morphology and nanoscale mechanical and electrical properties, and spatial homogeneity of these parameters. With atomic force microscopy (AFM) based scratching, Kelvin probe force microscopy, and conductive AFM, we measure friction and wear, surface potential, and local conductivity, respectively. We find that Gr grown on Mo is free of large wrinkles that are common with growth on other metals, although it contains a dense network of small wrinkles. We demonstrate that as a result of this unique and favorable morphology, the Gr studied here has low friction, high wear resistance, and excellent homogeneity of electrical surface potential and conductivity.
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Submitted 28 November, 2019;
originally announced November 2019.
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Mass measurement of graphene using quartz crystal microbalances
Authors:
Robin J. Dolleman,
Mick Hsu,
Sten Vollebregt,
John E. Sader,
Herre S. J. van der Zant,
Peter G. Steeneken,
Murali K. Ghatkesar
Abstract:
Current wafer-scale fabrication methods for graphene-based electronics and sensors involve the transfer of single-layer graphene by a support polymer. This often leaves some polymer residue on the graphene, which can strongly impact its electronic, thermal, and mechanical resonance properties. To assess the cleanliness of graphene fabrication methods, it is thus of considerable interest to quantif…
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Current wafer-scale fabrication methods for graphene-based electronics and sensors involve the transfer of single-layer graphene by a support polymer. This often leaves some polymer residue on the graphene, which can strongly impact its electronic, thermal, and mechanical resonance properties. To assess the cleanliness of graphene fabrication methods, it is thus of considerable interest to quantify the amount of contamination on top of the graphene. Here, we present a methodology for direct measurement of the mass of the graphene sheet using quartz crystal microbalances (QCM). By monitoring the QCM resonance frequency during removal of graphene in an oxygen plasma, the total mass of the graphene and contamination is determined with sub-graphene-monolayer accuracy. Since the etch-rate of the contamination is higher than that of graphene, quantitative measurements of the mass of contaminants below, on top, and between graphene layers are obtained. We find that polymer-based dry transfer methods can increase the mass of a graphene sheet by a factor of 10. The presented mass measurement method is conceptually straightforward to interpret and can be used for standardized testing of graphene transfer procedures in order to improve the quality of graphene devices in future applications.
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Submitted 28 February, 2019;
originally announced February 2019.
