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Exploring the effect of sex on an empirical fitness landscape
Authors:
J. Arjan G. M. de Visser,
Su-Chan Park,
Joachim Krug
Abstract:
The nature of epistasis has important consequences for the evolutionary significance of sex and recombination. Recent efforts to find negative epistasis as source of negative linkage disequilibrium and associated long-term sex advantage have yielded little support. Sign epistasis, where the sign of the fitness effects of alleles varies across genetic backgrounds, is responsible for ruggedness of…
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The nature of epistasis has important consequences for the evolutionary significance of sex and recombination. Recent efforts to find negative epistasis as source of negative linkage disequilibrium and associated long-term sex advantage have yielded little support. Sign epistasis, where the sign of the fitness effects of alleles varies across genetic backgrounds, is responsible for ruggedness of the fitness landscape with implications for the evolution of sex that have been largely unexplored. Here, we describe fitness landscapes for two sets of strains of the asexual fungus \emph{Aspergillus niger} involving all combinations of five mutations. We find that $\sim 30$% of the single-mutation fitness effects are positive despite their negative effect in the wild-type strain, and that several local fitness maxima and minima are present. We then compare adaptation of sexual and asexual populations on these empirical fitness landscapes using simulations. The results show a general disadvantage of sex on these rugged landscapes, caused by the break down by recombination of genotypes escaping from local peaks. Sex facilitates escape from a local peak only for some parameter values on one landscape, indicating its dependence on the landscape's topography. We discuss possible reasons for the discrepancy between our results and the reports of faster adaptation of sexual populations.
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Submitted 18 July, 2008;
originally announced July 2008.
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Simultaneous suppression of ferromagnetism and superconductivity in UCoGe by Si substitution
Authors:
D. E. de Nijs,
N. T. Huy,
A. de Visser
Abstract:
We investigate the effect of substituting Si for Ge in the ferromagnetic superconductor UCoGe. Dc-magnetization, ac-susceptibility and electrical resistivity measurements on polycrystalline UCoGe$_{1-x}$Si$_x$ samples show that ferromagnetic order and superconductivity are progressively depressed with increasing Si content and simultaneously vanish at a critical concentration…
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We investigate the effect of substituting Si for Ge in the ferromagnetic superconductor UCoGe. Dc-magnetization, ac-susceptibility and electrical resistivity measurements on polycrystalline UCoGe$_{1-x}$Si$_x$ samples show that ferromagnetic order and superconductivity are progressively depressed with increasing Si content and simultaneously vanish at a critical concentration $x_{cr} \simeq 0.12$. The non-Fermi liquid temperature variation in the electrical resistivity near $x_{cr}$ and the smooth depression of the ordered moment point to a continuous ferromagnetic quantum phase transition. Superconductivity is confined to the ferromagnetic phase, which provides further evidence for magnetically mediated superconductivity.
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Submitted 11 April, 2008;
originally announced April 2008.
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Unusual upper critical field of the ferromagnetic superconductor UCoGe
Authors:
N. T. Huy,
D. E. de Nijs,
Y. K. Huang,
A. de Visser
Abstract:
We report upper critical field $B_{c2}(T)$ measurements on a single-crystalline sample of the ferromagnetic superconductor UCoGe. $B_{c2}(0)$ obtained for fields applied along the orthorhombic axes exceeds the Pauli limit for $B \parallel a,b$ and shows a strong anisotropy $B_{c2}^{a} \simeq B_{c2}^{b} \gg B_{c2} ^{c}$. This provide evidence for an equal spin pairing state and a superconducting…
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We report upper critical field $B_{c2}(T)$ measurements on a single-crystalline sample of the ferromagnetic superconductor UCoGe. $B_{c2}(0)$ obtained for fields applied along the orthorhombic axes exceeds the Pauli limit for $B \parallel a,b$ and shows a strong anisotropy $B_{c2}^{a} \simeq B_{c2}^{b} \gg B_{c2} ^{c}$. This provide evidence for an equal spin pairing state and a superconducting gap function of axial symmetry with point nodes along the c axis, which is also the direction of the uniaxial ferromagnetic moment $m_0 = 0.07 μ_{B}$. An unusual curvature or kink is observed in the temperature variation of $B_{c2}$, which possibly indicates UCoGe is a two-band ferromagnetic superconductor.
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Submitted 17 January, 2008;
originally announced January 2008.
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Superconductivity on the border of weak itinerant ferromagnetism in UCoGe
Authors:
N. T. Huy,
A. Gasparini,
D. E. de Nijs,
Y. Huang,
J. C. P. Klaasse,
T. Gortenmulder,
A. de Visser,
A. Hamann,
T. Gorlach,
H. v. Lohneysen
Abstract:
We report the coexistence of ferromagnetic order and superconductivity in UCoGe at ambient pressure. Magnetization measurements show that UCoGe is a weak ferromagnet with a Curie temperature T_{C}= 3 K and a small ordered moment $m_{0}$= 0.03 $μ_B$. Superconductivity is observed with a resistive transition temperature T_{s} = 0.8 K for the best sample. Thermal-expansion and specific-heat measure…
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We report the coexistence of ferromagnetic order and superconductivity in UCoGe at ambient pressure. Magnetization measurements show that UCoGe is a weak ferromagnet with a Curie temperature T_{C}= 3 K and a small ordered moment $m_{0}$= 0.03 $μ_B$. Superconductivity is observed with a resistive transition temperature T_{s} = 0.8 K for the best sample. Thermal-expansion and specific-heat measurements provide solid evidence for bulk magnetism and superconductivity. The proximity to a ferromagnetic instability, the defect sensitivity of T_{s}, and the absence of Pauli limiting, suggest triplet superconductivity mediated by critical ferromagnetic fluctuations.
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Submitted 10 August, 2007;
originally announced August 2007.
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Evidence for a ferromagnetic quantum critical point in URhGe doped with Ru
Authors:
N. T. Huy,
D. E. de Nijs,
A. Gasparini,
J. C. P. Klaasse,
A. de Visser,
N. H. van Dijk
Abstract:
We have investigated the evolution of ferromagnetic order in the correlated metal series URh_{1-x}Ru_{x}Ge. Magnetization, transport and specific heat measurements provide convincing evidence for a ferromagnetic quantum critical point at the critical concentration x_{c} = 0.38. Here we report ac-susceptibility and magnetization measurements on selected samples with Ru doping concentrations near…
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We have investigated the evolution of ferromagnetic order in the correlated metal series URh_{1-x}Ru_{x}Ge. Magnetization, transport and specific heat measurements provide convincing evidence for a ferromagnetic quantum critical point at the critical concentration x_{c} = 0.38. Here we report ac-susceptibility and magnetization measurements on selected samples with Ru doping concentrations near the critical point.
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Submitted 8 June, 2007;
originally announced June 2007.
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Ferromagnetic quantum critical point in URhGe doped with Ru
Authors:
N. T. Huy,
A. Gasparini,
J. C. P. Klaasse,
A. de Visser,
S. Sakarya,
N. H. van Dijk
Abstract:
We have investigated the thermal, transport and magnetic properties of URh$_{1-x}$Ru$_x$Ge alloys near the critical concentration $x_{cr} = 0.38$ for the suppression of ferromagnetic order. The Curie temperature vanishes linearly with $x$ and the ordered moment $m_0$ is suppressed in a continuous way. At $x_{cr}$ the specific heat varies as $c \sim TlnT$, the $γ$-value $c/T|_{0.5K}$ is maximum a…
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We have investigated the thermal, transport and magnetic properties of URh$_{1-x}$Ru$_x$Ge alloys near the critical concentration $x_{cr} = 0.38$ for the suppression of ferromagnetic order. The Curie temperature vanishes linearly with $x$ and the ordered moment $m_0$ is suppressed in a continuous way. At $x_{cr}$ the specific heat varies as $c \sim TlnT$, the $γ$-value $c/T|_{0.5K}$ is maximum and the temperature exponent of the resistivity $ρ\sim T^n$ attains a minimum value $n=1.2$. These observations provide evidence for a ferromagnetic quantum phase transition. Interestingly, the coefficient of thermal expansion and the Grüneisen parameter $Γ$ remain finite at $x_{cr}$ (down to $T = 1$ K), which is at odds with recent scaling results for a metallic quantum critical point.
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Submitted 17 April, 2007;
originally announced April 2007.
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Evolution of ferromagnetic order in URhGe alloyed with Ru, Co and Si
Authors:
S. Sakarya,
N. T. Huy,
N. H. van Dijk,
A. de Visser,
J. C. P. Klaasse,
M. Wagemaker,
A. C. Moleman,
T. J. Gortenmulder,
M. Uhlarz,
H. v. Loehneysen
Abstract:
We have investigated the evolution of ferromagnetic order in the correlated metal URhGe (Curie temperature $T_{\rm C} = $9.5 K) by chemical substitution of Ru, Co and Si. Polycrystalline samples URh$_{1-x}$Ru$_x$Ge ($x \leq $0.6), URh$_{1-x}$Co$_x$Ge ($x \leq $0.9) and URhGe$_{1-x}$Si$_x$ ($x \leq $0.2) have been prepared and the magnetic properties have been investigated by magnetization and tr…
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We have investigated the evolution of ferromagnetic order in the correlated metal URhGe (Curie temperature $T_{\rm C} = $9.5 K) by chemical substitution of Ru, Co and Si. Polycrystalline samples URh$_{1-x}$Ru$_x$Ge ($x \leq $0.6), URh$_{1-x}$Co$_x$Ge ($x \leq $0.9) and URhGe$_{1-x}$Si$_x$ ($x \leq $0.2) have been prepared and the magnetic properties have been investigated by magnetization and transport experiments. In the case of Ru doping, $T_{\rm C}$ initially increases, but then decreases linearly as a function of $x$ and is completely suppressed for $x_{\rm cr} \approx 0.38$. The Curie temperature in the URh$_{1-x}$Co$_x$Ge series has a broad maximum $T_{\rm C} = 20$ K near $x=0.6$ and then drops to 8 K for $x=0.9$. In the case of Si doping $T_{\rm C}$ stays roughly constant. We conclude that the alloy systems URh$_{1-x}$Ru$_x$Ge and URh$_{1-x}$Co$_x$Ge are interesting candidates to study the ferromagnetic instability.
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Submitted 12 March, 2007; v1 submitted 21 September, 2006;
originally announced September 2006.
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Quantum critical behaviour of the plateau-insulator transition in the quantum Hall regime
Authors:
A. de Visser,
L. A. Ponomarenko,
G. Galistu,
D. T. N. de Lang,
A. M. M. Pruisken,
U. Zeitler,
D. Maude
Abstract:
High-field magnetotransport experiments provide an excellent tool to investigate the plateau-insulator phase transition in the integral quantum Hall effect. Here we review recent low-temperature high-field magnetotransport studies carried out on several InGaAs/InP heterostructures and an InGaAs/GaAs quantum well. We find that the longitudinal resistivity $ρ_{xx}$ near the critical filling factor…
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High-field magnetotransport experiments provide an excellent tool to investigate the plateau-insulator phase transition in the integral quantum Hall effect. Here we review recent low-temperature high-field magnetotransport studies carried out on several InGaAs/InP heterostructures and an InGaAs/GaAs quantum well. We find that the longitudinal resistivity $ρ_{xx}$ near the critical filling factor $ν_{c}$ ~ 0.5 follows the universal scaling law $ρ_{xx}(ν, T) \propto exp[-Δν/(T/T_{0})^κ]$, where $Δν=ν-ν_{c}$. The critical exponent $κ$ equals $0.56 \pm 0.02$, which indicates that the plateau-insulator transition falls in a non-Fermi liquid universality class.
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Submitted 22 August, 2006;
originally announced August 2006.
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Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central AlAs barrier
Authors:
V. A. Kulbachinskii,
I. S. Vasil'evskii,
R. A. Lunin,
G. Galistu,
A. de Visser,
G. B. Galiev,
S. S. Shirokov,
V. G. Mokerov
Abstract:
Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity measurements in the temperature range 4-300 K and magnetotransport in magnetic fields up to 12 T. The (subband) carrier concentrations and mobilities are extract…
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Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity measurements in the temperature range 4-300 K and magnetotransport in magnetic fields up to 12 T. The (subband) carrier concentrations and mobilities are extracted from the Hall data and Shubnikov-de Haas oscillations. We find that the transport parameters are strongly affected by the insertion of the AlAs central barrier. Photoluminescence spectra, measured at 77 K, show an increase of the transition energies upon insertion of the barrier. The transport and optical data are analyzed with help of self-consistent calculations of the subband structure and envelope wave functions. Insertion of the AlAs central barrier changes the spatial distribution of the electron wave functions and leads to the formation of hybrid states, i.e. states which extend over the InGaAs and the delta-doped layer quantum wells.
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Submitted 12 July, 2006;
originally announced July 2006.
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The ground state of a quantum critical system
Authors:
Wouter Montfrooij,
Jagat Lamsal,
Meigan Aronson,
Marcus Bennett,
Anne de Visser,
Huang Ying Kai,
Nguyen Thanh Huy,
Mohana Yethiraj,
Mark Lumsden,
Yiming Qiu
Abstract:
The competition between the tendency of magnetic moments to order at low temperatures, and the tendency of conduction electrons to shield these moments, can result in a phase transition that takes place at zero Kelvin, the quantum critical point (QCP). So far, the ground state of these types of systems has remained unresolved. We present neutron scattering experiments that show that the ground s…
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The competition between the tendency of magnetic moments to order at low temperatures, and the tendency of conduction electrons to shield these moments, can result in a phase transition that takes place at zero Kelvin, the quantum critical point (QCP). So far, the ground state of these types of systems has remained unresolved. We present neutron scattering experiments that show that the ground state of a sample representative of a class of QCP-systems is determined by the residual interactions between the conduction electrons, resulting in a state with incommensurate intermediate-range order. However, long-range order is thwarted by quantum fluctuations that locally destroy magnetic moments, leaving the system with too few moments to achieve long-range order.
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Submitted 27 June, 2006;
originally announced June 2006.
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Observation of the quantized Hall insulator in the quantum critical regime of the two-dimensional electron gas
Authors:
D. T. N. de Lang,
L. A. Ponomarenko,
A. de Visser,
A. M. M. Pruisken
Abstract:
We have investigated the Hall resistance $R_H$ near the plateau-insulator transition of a two-dimensional electron gas in the quantum critical regime. High-field magnetotransport data taken on a low-mobility InGaAs/InP heterostructure with the plateau-insulator transition at a critical field $B_c$ of 17.2 T show that the Hall resistance $R_H$ is quantized at $h/e^2$ near the critical filling fra…
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We have investigated the Hall resistance $R_H$ near the plateau-insulator transition of a two-dimensional electron gas in the quantum critical regime. High-field magnetotransport data taken on a low-mobility InGaAs/InP heterostructure with the plateau-insulator transition at a critical field $B_c$ of 17.2 T show that the Hall resistance $R_H$ is quantized at $h/e^2$ near the critical filling fraction ($ν_c$ = 0.55) when $T \to 0$. By making use of universal scaling functions extracted from the magnetotransport data we show that $R_H$ in the insulating phase in the limit $T \to 0$ is quantized at $h/e^2$ for all values of the scaling parameter $Δν/(T/T_0)^κ$ with $Δν= ν- ν_c$. However, as a function of $Δν$ (or magnetic field) the Hall resistance diverges in the limit $T \to 0$ for all values $ν< ν_c$.
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Submitted 5 October, 2006; v1 submitted 3 February, 2006;
originally announced February 2006.
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Non-Fermi-liquid behavior in Ce(Ru$_{1-x}$Fe$_x$)$_2$Ge$_2$: cause and effect
Authors:
W. Montfrooij,
M. C. Aronson,
B. D. Rainford,
J. A. Mydosh,
R. Hendrikx,
T. Gortenmulder,
A. P. Murani,
P. Haen,
I. Swainson,
A. de Visser
Abstract:
We present inelastic neutron scattering measurements on the intermetallic compounds Ce(Ru$_{1-x}$Fe$_x$)$_2$Ge$_2$ ($x$=0.65, 0.76 and 0.87). These compounds represent samples in a magnetically ordered phase, at a quantum critical point and in the heavy-fermion phase, respectively. We show that at high temperatures the three compositions have the identical response of a local moment system. Howe…
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We present inelastic neutron scattering measurements on the intermetallic compounds Ce(Ru$_{1-x}$Fe$_x$)$_2$Ge$_2$ ($x$=0.65, 0.76 and 0.87). These compounds represent samples in a magnetically ordered phase, at a quantum critical point and in the heavy-fermion phase, respectively. We show that at high temperatures the three compositions have the identical response of a local moment system. However, at low temperatures the spin fluctuations in the critical composition are given by non-Fermi-liquid dynamics, while the spin fluctuations in the heavy fermion system show a simple exponential decay in time. In both compositions, the lifetime of the fluctuations is determined solely by the distance to the quantum critical point. We discuss the implications of these observations regarding the possible origins of non-Fermi-liquid behavior in this system.
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Submitted 6 December, 2005;
originally announced December 2005.
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Suppression of ferromagnetism in URhGe doped with Ru
Authors:
S. Sakarya,
N. H. van Dijk,
N. T. Huy,
A. de Visser
Abstract:
In the correlated metal URhGe ferromagnetic order (T_C = 9.5 K) and superconductivity (T_s= 0.25 K) coexist at ambient pressure. Here we report on alloying URhGe by Ru, which enables one to tune the Curie temperature to 0 K. URuGe has a paramagnetic ground state and is isostructural to URhGe. We have prepared a series of polycrystalline URh_{1-x}Ru_{x}Ge samples over a wide range of x values. Ma…
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In the correlated metal URhGe ferromagnetic order (T_C = 9.5 K) and superconductivity (T_s= 0.25 K) coexist at ambient pressure. Here we report on alloying URhGe by Ru, which enables one to tune the Curie temperature to 0 K. URuGe has a paramagnetic ground state and is isostructural to URhGe. We have prepared a series of polycrystalline URh_{1-x}Ru_{x}Ge samples over a wide range of x values. Magnetization and electrical resistivity data (T > 2 K) show, after an initial increase, a linear suppression of T_C with increasing x. The critical Ru concentration for the suppression of ferromagnetic order is x_cr ~ 0.38.
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Submitted 4 July, 2005;
originally announced July 2005.
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Weak magnetism phenomena in heavy-fermion superconductors: selected $μ$SR studies
Authors:
A. Amato,
M. J. Graf,
A. de Visser,
H. Amitsuka,
D. Andreica,
A. Schenck
Abstract:
The behavior of the so-called weak moment antiferromagnetic states, observed in the heavy-fermion superconductors UPt$_3$ and URu$_2$Si$_2$, is discussed in view of recent $μ$SR results obtained as function of control parameters like chemical substitution and external pressure. In UPt$_3$, the Pd substitution for Pt reveals the dynamical character of the weak moment order. On the other hand,…
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The behavior of the so-called weak moment antiferromagnetic states, observed in the heavy-fermion superconductors UPt$_3$ and URu$_2$Si$_2$, is discussed in view of recent $μ$SR results obtained as function of control parameters like chemical substitution and external pressure. In UPt$_3$, the Pd substitution for Pt reveals the dynamical character of the weak moment order. On the other hand, $μ$SR measurements performed on samples in which Th substitutes U suggest that crystallographic disorder on the magnetic sites deeply affects the fluctuation timescale. In URu$_2$Si$_2$, a phase separation between the so-called hidden order state, present at ambient pressure, and an antiferromagnetic state, occurring under pressure, is observed. In view of the pressure-temperature phase diagram obtained by $μ$SR, it is deduced that the respective order parameters have different symmetries.
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Submitted 16 August, 2004;
originally announced August 2004.
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Ordered magnetic and quadrupolar states under hydrostatic pressure in orthorhombic PrCu2
Authors:
T. Naka,
L. A. Ponomarenko,
A. de Visser,
A. Matsushita,
R. Settai,
Y. Onuki
Abstract:
We report magnetic susceptibility and electrical resistivity measurements on single-crystalline PrCu2 under hydrostatic pressure, up to 2 GPa, which pressure range covers the pressure-induced Van Vleck paramagnet-to-antiferromagnet transition at 1.2 GPa. The measured anisotropy in the susceptibility shows that in the pressure-induced magnetic state the ordered 4f-moments lie in the ac-plane. We…
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We report magnetic susceptibility and electrical resistivity measurements on single-crystalline PrCu2 under hydrostatic pressure, up to 2 GPa, which pressure range covers the pressure-induced Van Vleck paramagnet-to-antiferromagnet transition at 1.2 GPa. The measured anisotropy in the susceptibility shows that in the pressure-induced magnetic state the ordered 4f-moments lie in the ac-plane. We propose that remarkable pressure effects on the susceptibility and resistivity are due to changes in the quadrupolar state of O22 and/or O20 under pressure. We present a simple analysis in terms of the singlet-singlet model.
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Submitted 20 July, 2004;
originally announced July 2004.
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Effect of Zeeman splitting on magnetoresistivity of 2D hole gas in a Ge_{1-x}Si_x/Ge/Ge_{1-x}Si_x quantum well
Authors:
Yu. G. Arapov,
V. N. Neverov,
G. I. Harus,
N. G. Shelushinina,
M. V. Yakunin,
O. A. Kuznetsov,
A. de Visser,
L. Ponomarenko
Abstract:
For a two-dimensional (2D) hole system (confined within Ge layers of a multilayered p-Ge/Ge_{1-x}Si_x heterostructure) described by Luttinger Hamiltonian with the g-factor highly anisotropic for orientations of magnetic field perpendicular and parallel to the 2D plane (g_perp >> g_par), reported is an observation of low-temperature transition from metallic (dR/dT > 0) to insulator (dR/dT < 0) be…
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For a two-dimensional (2D) hole system (confined within Ge layers of a multilayered p-Ge/Ge_{1-x}Si_x heterostructure) described by Luttinger Hamiltonian with the g-factor highly anisotropic for orientations of magnetic field perpendicular and parallel to the 2D plane (g_perp >> g_par), reported is an observation of low-temperature transition from metallic (dR/dT > 0) to insulator (dR/dT < 0) behavior of resistivity R(T) induced by a perpendicular magnetic field B. The revealed positive magnetoresistance scales as a function of B/T. We attribute this finding to a suppression of the triplet channel of electron-electron (hole-hole) interaction due to Zeeman splitting in the hole spectrum.
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Submitted 15 April, 2004;
originally announced April 2004.
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The effects of macroscopic inhomogeneities on the magneto transport properties of the electron gas in two dimensions
Authors:
B. Karmakar,
M. R. Gokhale,
A. P. Shah,
B. M. Arora,
D. T. N. de Lang,
A. de Visser,
L. A. Ponomarenko,
A. M. M. Pruisken
Abstract:
In experiments on electron transport the macroscopic inhomogeneities in the sample play a fundamental role. In this paper and a subsequent one we introduce and develop a general formalism that captures the principal features of sample inhomogeneities (density gradients, contact misalignments) in the magneto resistance data taken from low mobility heterostructures. We present detailed assessments…
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In experiments on electron transport the macroscopic inhomogeneities in the sample play a fundamental role. In this paper and a subsequent one we introduce and develop a general formalism that captures the principal features of sample inhomogeneities (density gradients, contact misalignments) in the magneto resistance data taken from low mobility heterostructures. We present detailed assessments and experimental investigations of the different regimes of physical interest, notably the regime of semiclassical transport at weak magnetic fields, the plateau-plateau transitions as well as the plateau-insulator transition that generally occurs at much stronger values of the external field only.
It is shown that the semiclassical regime at weak fields plays an integral role in the general understanding of the experiments on the quantum Hall regime. The results of this paper clearly indicate that the plateau-plateau transitions, unlike the the plateau-insulator transition, are fundamentally affected by the presence of sample inhomogeneities. We propose a universal scaling result for the magneto resistance parameters. This result facilitates, amongst many other things, a detailed understanding of the difficulties associated with the experimental methodology of H.P. Wei et.al in extracting the quantum critical behavior of the electron gas from the transport measurements conducted on the plateau-plateau transitions.
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Submitted 30 September, 2003;
originally announced September 2003.
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New Insights into the Plateau-Insulator Transition in the Quantum Hall Regime
Authors:
L. A. Ponomarenko,
D. T. N. de Lang,
A. de Visser,
D. Maude,
B. N. Zvonkov,
R. A. Lunin,
A. M. M. Pruisken
Abstract:
We have measured the quantum critical behavior of the plateau-insulator (PI) transition in a low-mobility InGaAs/GaAs quantum well. The longitudinal resistivity measured for two different values of the electron density follows an exponential law, from which we extract critical exponents kappa = 0.54 and 0.58, in good agreement with the value (kappa = 0.57) previously obtained for an InGaAs/InP h…
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We have measured the quantum critical behavior of the plateau-insulator (PI) transition in a low-mobility InGaAs/GaAs quantum well. The longitudinal resistivity measured for two different values of the electron density follows an exponential law, from which we extract critical exponents kappa = 0.54 and 0.58, in good agreement with the value (kappa = 0.57) previously obtained for an InGaAs/InP heterostructure. This provides evidence for a non-Fermi liquid critical exponent. By reversing the direction of the magnetic field we find that the averaged Hall resistance remains quantized at the plateau value h/e^2 through the PI transition. From the deviations of the Hall resistance from the quantized value, we obtain the corrections to scaling.
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Submitted 19 August, 2003;
originally announced August 2003.
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Onset of antiferromagnetism in UPt_{3} via Th-substitution studied by muon spin spectroscopy
Authors:
M. J. Graf,
A. de Visser,
C. P. Opeil,
J. C. Cooley,
J. L. Smith,
A. Amato,
C. Baines,
F. Gygax,
A. Schenck
Abstract:
Muon spin spectroscopy has been used to study in detail the onset of large-moment antiferromagnetism (LMAF) in UPt_{3} as induced by Th substitution. Zero-field experiments have been carried out on a series of polycrystalline U_{1-x}Th_{x}Pt_{3} (0 <= x <= 0.05) samples in the temperature range 0.04 - 10 K. At low Th content (x <= 0.002) magnetic ordering on the time scale of the uSR experiment…
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Muon spin spectroscopy has been used to study in detail the onset of large-moment antiferromagnetism (LMAF) in UPt_{3} as induced by Th substitution. Zero-field experiments have been carried out on a series of polycrystalline U_{1-x}Th_{x}Pt_{3} (0 <= x <= 0.05) samples in the temperature range 0.04 - 10 K. At low Th content (x <= 0.002) magnetic ordering on the time scale of the uSR experiment (10^{-8} s) is not detected. For x = 0.005 a weak magnetic signal appears below T = 2 K, while for 0.006 <= x <= 0.05, spontaneous oscillations in the uSR spectra signal the presence of the LMAF phase. The data are well described by a two-component depolarization function, combining the contribution of a polycrystalline antiferromagnet and a Kubo-Lorentzian response. However, the transition into the antiferromagnetic phase is quite broad. For x = 0.01 and 0.02, a weak magnetic signal appears below about 7 K, which is well above the mean-field transition temperatures. The broadening may be a result of the effects of disorder on the time fluctuations associated with anomalous small-moment antiferromagnetism.
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Submitted 6 November, 2003; v1 submitted 2 July, 2003;
originally announced July 2003.
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Parallel magnetic field induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes
Authors:
M. V. Yakunin,
G. A. Alshanskii,
Yu. G. Arapov,
G. I. Harus,
V. N. Neverov,
N. G. Shelushinina,
O. A. Kuznetsov,
B. N. Zvonkov,
E. A. Uskova,
L. Ponomarenko,
A. de Visser
Abstract:
In In_xGa_{1-x}As/n-GaAs double quantum wells (DQWs) containing an electron gas, the magnetoresistance (MR) peculiarities under parallel magnetic fields caused by the passing of the tunnel gap edges through the Fermi level are revealed. Peculiarities positioned in high fields (~30 T) can only be explained if the spin-splitting of the In_xGa_{1-x}As conduction band is considered, that was neglect…
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In In_xGa_{1-x}As/n-GaAs double quantum wells (DQWs) containing an electron gas, the magnetoresistance (MR) peculiarities under parallel magnetic fields caused by the passing of the tunnel gap edges through the Fermi level are revealed. Peculiarities positioned in high fields (~30 T) can only be explained if the spin-splitting of the In_xGa_{1-x}As conduction band is considered, that was neglected in the GaAs/AlGaAs heterostructures, for which solely the effects of this nature have been observed so far. In Ge/p-Ge_{1-x}Si_x DQWs containing a hole gas, local MR peculiarities under parallel fields are discovered as well. But the tunnel gap in these DQWs is too narrow to be responsible for these observations. We suppose, they are due to a complicated shape of the hole confinement subbands.
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Submitted 6 June, 2003;
originally announced June 2003.
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The effect of carrier density gradients on magnetotransport data measured in Hall bar geometry
Authors:
L. A. Ponomarenko,
D. T. N. de Lang,
A. de Visser,
V. A. Kulbachinskii,
G. B. Galiev,
H. Künzel,
A. M. M. Pruisken
Abstract:
We have measured magnetotransport of the two-dimensional electron gas in a Hall bar geometry in the presence of small carrier density gradients. We find that the longitudinal resistances measured at both sides of the Hall bar interchange by reversing the polarity of the magnetic field. We offer a simple explanation for this effect and discuss implications for extracting conductivity flow diagram…
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We have measured magnetotransport of the two-dimensional electron gas in a Hall bar geometry in the presence of small carrier density gradients. We find that the longitudinal resistances measured at both sides of the Hall bar interchange by reversing the polarity of the magnetic field. We offer a simple explanation for this effect and discuss implications for extracting conductivity flow diagrams of the integer quantum Hall effect.
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Submitted 3 June, 2003;
originally announced June 2003.
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Thermal expansion of the magnetorefrigerant Gd5(Si,Ge)4
Authors:
M. Nazih,
A. de Visser,
L. Zhang,
O. Tegus,
E. Bruck
Abstract:
We report thermal expansion measurements carried out on a single-crystal of the giant magnetocaloric effect material Gd5(Si0.43Ge0.57)4. At the magneto-structural phase transition at T_0 ~ 240 K, large steps in the relative length change DELTAL/L along the principle crystallographic axes are observed. The single-step behaviour in DELTAL/L indicates that the magnetic and structural phase transiti…
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We report thermal expansion measurements carried out on a single-crystal of the giant magnetocaloric effect material Gd5(Si0.43Ge0.57)4. At the magneto-structural phase transition at T_0 ~ 240 K, large steps in the relative length change DELTAL/L along the principle crystallographic axes are observed. The single-step behaviour in DELTAL/L indicates that the magnetic and structural phase transition occur at one and the same temperature. The specific heat was measured in order to determine the latent heat. Using the Clausius-Clapeyron relation we extract a hydrostatic pressure dependence dT_0/dp of 3.2+-0.2 K/kbar. The pressure effect is strongly anisotropic as follows from the anisotropy in the linear thermal expansion. Uniaxial pressure along the a-axis enhances T_0, while uniaxial pressure in the bc-plane suppresses T_0.
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Submitted 28 January, 2003;
originally announced January 2003.
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Dilatometry study of the ferromagnetic order in single-crystalline URhGe
Authors:
S. Sakarya,
N. H. van Dijk,
A. de Visser,
E. Bruck
Abstract:
Thermal expansion measurements have been carried out on single-crystalline URhGe in the temperature range from 2 to 200 K. At the ferromagnetic transition (Curie temperature T_C = 9.7 K), the coefficients of linear thermal expansion along the three principal orthorhombic axes all exhibit pronounced positive peaks. This implies that the uniaxial pressure dependencies of the Curie temperature, det…
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Thermal expansion measurements have been carried out on single-crystalline URhGe in the temperature range from 2 to 200 K. At the ferromagnetic transition (Curie temperature T_C = 9.7 K), the coefficients of linear thermal expansion along the three principal orthorhombic axes all exhibit pronounced positive peaks. This implies that the uniaxial pressure dependencies of the Curie temperature, determined by the Ehrenfest relation, are all positive. Consequently, the calculated hydrostatic pressure dependence dT_C/dp is positive and amounts to 0.12 K/kbar. In addition, the effective Gruneisen parameter was determined. The low-temperature electronic Gruneisen parameter Γ_{sf} = 14 indicates an enhanced volume dependence of the ferromagnetic spin fluctuations at low temperatures. Moreover, the volume dependencies of the energy scales for ferromagnetic order and ferromagnetic spin fluctuations were found to be identical.
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Submitted 2 December, 2002;
originally announced December 2002.
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Optical and transport properties of short period InAs/GaAs superlattices near quantum dot formation
Authors:
V. A. Kulbachinskii,
R. A. Lunin,
V. A. Rogozin,
V. G. Mokerov,
Yu. V. Fedorov,
Yu. V. Khabarov,
A. de Visser
Abstract:
We have investigated the optical and transport properties of MBE grown short-period superlattices of InAs/GaAs with different numbers of periods (3 <= N <= 24) and a total thickness 14 nm. Bandstructure calculations show that these superlattices represent a quantum well with average composition In_0.16Ga_0.84As. The electron wave functions are only slightly modulated by the superlattice potentia…
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We have investigated the optical and transport properties of MBE grown short-period superlattices of InAs/GaAs with different numbers of periods (3 <= N <= 24) and a total thickness 14 nm. Bandstructure calculations show that these superlattices represent a quantum well with average composition In_0.16Ga_0.84As. The electron wave functions are only slightly modulated by the superlattice potential as compared to a single quantum well with the same composition, which was grown as a reference sample. The photoluminescence, the resistance, the Shubnikov-de Haas effect and the Hall effect have been measured as a function of the InAs layer thickness Q in the range 0.33 <= Q <= 2.7 monolayers (ML). The electron densities range from 6.8 to 11.5x10^11 cm^-2 for Q <= 2.0 ML. The photoluminescence and magnetotransport data show that only one subband is occupied. When Q >= 2.7 ML quantum dots are formed and the metallic type of conductivity changes to variable range hopping conductivity.
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Submitted 25 April, 2002;
originally announced April 2002.
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Extraordinary magnetization behavior of single crystalline TbFe_4.4Al_7.6
Authors:
N. P. Duong,
E. Brueck,
P. E. Brommer,
A. de Visser,
F. R. de Boer,
K. H. J. Buschow
Abstract:
We report the observation of a field-induced transformation from the easy-plane antiferromagnetic structure to the easy-axis ferrimagnetic structure in a single crystal of TbFe_4.4Al_7.6 (tetragonal ThMn_12 structure) at 5 K. Such a field-induced, irreversible transition has been identified for the first time. This transition is accompanied by a giant orthorhombic distortion: epsilon_aa = - epsi…
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We report the observation of a field-induced transformation from the easy-plane antiferromagnetic structure to the easy-axis ferrimagnetic structure in a single crystal of TbFe_4.4Al_7.6 (tetragonal ThMn_12 structure) at 5 K. Such a field-induced, irreversible transition has been identified for the first time. This transition is accompanied by a giant orthorhombic distortion: epsilon_aa = - epsilon_bb ~ 3.5x10^-4 that is associated with a magnetic hardness (mu_0H_C ~ 3 T) that is unprecedented in this category of materials.
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Submitted 21 November, 2001;
originally announced November 2001.
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High pressure transport study of non-Fermi liquid behaviour in U2Pt2In and U3Ni3Sn4
Authors:
A. de Visser,
P. Estrela,
T. Naka
Abstract:
The strongly correlated metals U2Pt2In and U3Ni3Sn4 show pronounced non-Fermi liquid (NFL) phenomena at ambient pressure. Here we review single-crystal electrical resistivity measurements under pressure (p <= 1.8 GPa) conducted to investigate the stability of the NFL phase. For tetragonal U2Pt2In (I||a) we observe a rapid recovery of the Fermi-liquid T^2-term with pressure. The Fermi-liquid temp…
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The strongly correlated metals U2Pt2In and U3Ni3Sn4 show pronounced non-Fermi liquid (NFL) phenomena at ambient pressure. Here we review single-crystal electrical resistivity measurements under pressure (p <= 1.8 GPa) conducted to investigate the stability of the NFL phase. For tetragonal U2Pt2In (I||a) we observe a rapid recovery of the Fermi-liquid T^2-term with pressure. The Fermi-liquid temperature varies as T_FL ~ p-p_c, where p_c= 0 is a critical pressure. The analysis within the magnetotransport theory of Rosch provides evidence for the location of U2Pt2In at a zero pressure antiferromagnetic quantum critical point (QCP). In the case of cubic U3Ni3Sn4 we find T_FL ~ (p-p_c)^1/2. The analysis provides evidence for an antiferromagnetic QCP in U3Ni3Sn4 at a negative pressure p_c= -0.04+-0.04 GPa.
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Submitted 29 October, 2001;
originally announced October 2001.
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Quantum criticality, particle-hole symmetry, and duality of the plateau-insulator transition in the quantum Hall regime
Authors:
A. M. M. Pruisken,
D. T. N. de Lang,
L. A. Ponomarenko,
A. de Visser
Abstract:
We report new experimental data on the plateau-insulator transition in the quantum Hall regime, taken from a low mobility InGaAs/InP heterostructure. By employing the fundamental symmetries of the quantum transport problem we are able to disentangle the universal quantum critical aspects of the magnetoresistance data (critical indices and scaling functions) and the sample dependent aspects due t…
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We report new experimental data on the plateau-insulator transition in the quantum Hall regime, taken from a low mobility InGaAs/InP heterostructure. By employing the fundamental symmetries of the quantum transport problem we are able to disentangle the universal quantum critical aspects of the magnetoresistance data (critical indices and scaling functions) and the sample dependent aspects due to macroscopic inhomogeneities. Our new results and methodology indicate that the previously established experimental value for the critical index (kappa = 0.42) resulted from an admixture of both universal and sample dependent behavior. A novel, non-Fermi liquid value is found (kappa = 0.57) along with the leading corrections to scaling. The statement of self-duality under the Chern Simons flux attachment transformation is verified.
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Submitted 7 May, 2002; v1 submitted 4 September, 2001;
originally announced September 2001.
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Evidence for a Quantum Hall Insulator in an InGaAs/InP Heterostructure
Authors:
D. T. N. de Lang,
L. A. Ponomarenko,
A. de Visser,
C. Possanzini,
S. M. Olsthoorn,
A. M. M. Pruisken
Abstract:
We study the quantum critical behavior of the plateau-insulator (PI) transition in a low mobility InGaAs/InP heterostructure. By reversing the direction of the magnetic field (B) we find an averaged Hall resistance ρ_xy which remains quantized at the plateau value h/e^2 throughout the PI transition. We extract a critical exponent κ'= 0.57 +/- 0.02 for the PI transition which is slightly differen…
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We study the quantum critical behavior of the plateau-insulator (PI) transition in a low mobility InGaAs/InP heterostructure. By reversing the direction of the magnetic field (B) we find an averaged Hall resistance ρ_xy which remains quantized at the plateau value h/e^2 throughout the PI transition. We extract a critical exponent κ'= 0.57 +/- 0.02 for the PI transition which is slightly different from (and possibly more accurate than) the established value 0.42 +/- 0.04 as previously obtained from the plateau-plateau (PP) transitions.
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Submitted 19 June, 2001;
originally announced June 2001.
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Pressure-induced recovery of the Fermi-liquid state in the non-Fermi liquid material U2Pt2In
Authors:
P. Estrela,
A. de Visser,
T. Naka,
F. R. de Boer,
L. C. J. Pereira
Abstract:
In the study of non-Fermi-liquid (NFL) phenomena in correlated metals, U2Pt2In is of special interest as it is one of the rare stoichiometric (undoped) materials that show NFL behaviour at ambient pressure. Here we report on the stability of the NFL phase with respect to hydrostatic pressure (p< 1.8 GPa). Electrical resistivity data under pressure, taken on a single-crystalline sample for a curr…
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In the study of non-Fermi-liquid (NFL) phenomena in correlated metals, U2Pt2In is of special interest as it is one of the rare stoichiometric (undoped) materials that show NFL behaviour at ambient pressure. Here we report on the stability of the NFL phase with respect to hydrostatic pressure (p< 1.8 GPa). Electrical resistivity data under pressure, taken on a single-crystalline sample for a current in the tetragonal plane, show that T_FL, i.e. the temperature below which the Fermi-liquid T^2-term is observed, increases with pressure as T_FL ~ (p-p_c), where p_c~0 is a critical pressure. This provides strong evidence for the location of U2Pt2In at an antiferromagnetic quantum critical point.
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Submitted 15 June, 2001;
originally announced June 2001.
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The Magnetic Susceptibility of Non-Interacting Nanoparticles
Authors:
L. A. Ponomarenko,
A. de Visser,
E. Brück,
A. M. Tishin
Abstract:
We have calculated the low-field magnetic susceptibility $χ$ of a system consisting of non-interacting mono-dispersed nanoparticles using a classical statistical approach. The model makes use of the assumption that the axes of symmetry of all nanoparticles are aligned and oriented at a certain angle $ψ$ with respect to the external magnetic field. An analytical expression for the temperature dep…
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We have calculated the low-field magnetic susceptibility $χ$ of a system consisting of non-interacting mono-dispersed nanoparticles using a classical statistical approach. The model makes use of the assumption that the axes of symmetry of all nanoparticles are aligned and oriented at a certain angle $ψ$ with respect to the external magnetic field. An analytical expression for the temperature dependence of the susceptibility $χ(T)$ above the blocking temperature is obtained. The derived expression is a generalization of the Curie law for the case of anisotropic magnetic particles. We show that the normalized susceptibility is a universal function of the ratio of the temperature over the anisotropy constant for each angle $ψ$. In the case that the easy-axis is perpendicular to the magnetic field the susceptibility has a maximum. The temperature of the maximum allows one to determine the anisotropy energy.
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Submitted 27 April, 2001;
originally announced April 2001.
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Recovery of the Fermi-liquid state in U_3Ni_3Sn_4 by pressure
Authors:
P. Estrela,
A. de Visser,
F. R. de Boer,
T. Naka,
L. Shlyk
Abstract:
Measurements of the resistivity of single-crystalline U_3Ni_3Sn_4 under hydrostatic pressure up to 1.8 GPa are reported. We show that the temperature T_FL, below which the resistivity obeys the Fermi-liquid expression rho ~ T^2, increases with pressure as T_FL ~ (p-p_c)^1/2. The analysis of the data within the magnetotransport theory of Rosch lends strong support for an antiferromagnetic quantum…
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Measurements of the resistivity of single-crystalline U_3Ni_3Sn_4 under hydrostatic pressure up to 1.8 GPa are reported. We show that the temperature T_FL, below which the resistivity obeys the Fermi-liquid expression rho ~ T^2, increases with pressure as T_FL ~ (p-p_c)^1/2. The analysis of the data within the magnetotransport theory of Rosch lends strong support for an antiferromagnetic quantum critical point in U_3Ni_3Sn_4 at a negative critical pressure p_c of -0.04+-0.02 GPa. The proximity to an antiferromagnetic instability in U_3Ni_3Sn_4 is consistent with the previously reported non-Fermi liquid term in the low-temperature specific heat.
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Submitted 3 November, 2000;
originally announced November 2000.
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High-pressure study of the non-Fermi liquid material U_2Pt_2In
Authors:
P. Estrela,
A. de Visser,
T. Naka,
F. R. de Boer,
L. C. J. Pereira
Abstract:
The effect of hydrostatic pressure (p<= 1.8 GPa) on the non-Fermi liquid state of U_2Pt_2In is investigated by electrical resistivity measurements in the temperature interval 0.3-300 K. The experiments were carried out on single-crystals with the current along (I||c) and perpendicular (I||a) to the tetragonal axis. The pressure effect is strongly current-direction dependent. For I||a we observe…
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The effect of hydrostatic pressure (p<= 1.8 GPa) on the non-Fermi liquid state of U_2Pt_2In is investigated by electrical resistivity measurements in the temperature interval 0.3-300 K. The experiments were carried out on single-crystals with the current along (I||c) and perpendicular (I||a) to the tetragonal axis. The pressure effect is strongly current-direction dependent. For I||a we observe a rapid recovery of the Fermi-liquid T^2-term with pressure. The low-temperature resistivity can be analysed satisfactorily within the magnetotransport theory of Rosch, which provides strong evidence for the location of U_2Pt_2In at an antiferromagnetic quantum critical point. For I||c the resistivity increases under pressure, indicating the enhancement of an additional scattering mechanism. In addition, we have measured the pressure dependence of the antiferromagnetic ordering temperature (T_N= 37.6 K) of the related compound U_2Pd_2In. A simple Doniach-type diagram for U_2Pt_2In and U_2Pd_2In under pressure is presented.
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Submitted 21 September, 2000;
originally announced September 2000.
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Magnetic quantum critical point and superconductivity in UPt3 doped with Pd
Authors:
A. de Visser,
M. J. Graf,
P. Estrela,
A. Amato,
C. Baines,
D. Andreica,
F. N. Gygax,
A. Schenck
Abstract:
Transverse-field muon spin relaxation measurements have been carried out on the heavy-fermion superconductor UPt3 doped with small amounts of Pd. We find that the critical Pd concentration for the emergence of the large-moment antiferromagnetic phase is ~0.6 at.%Pd. At the same Pd content, superconductivity is completely suppressed. The existence of a magnetic quantum critical point in the phase…
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Transverse-field muon spin relaxation measurements have been carried out on the heavy-fermion superconductor UPt3 doped with small amounts of Pd. We find that the critical Pd concentration for the emergence of the large-moment antiferromagnetic phase is ~0.6 at.%Pd. At the same Pd content, superconductivity is completely suppressed. The existence of a magnetic quantum critical point in the phase diagram, which coincides with the critical point for superconductivity, provides evidence for ferromagnetic spin-fluctuation mediated odd-parity superconductivity, which competes with antiferromagnetic order.
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Submitted 2 October, 2000; v1 submitted 21 June, 2000;
originally announced June 2000.
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Crystal Structure and Physical Properties of U3T3Sn4 (T = Ni, Cu) Single-Crystals
Authors:
L. Shlyk,
P. Estrela,
J. C. Waerenborgh,
L. E. De Long,
A. de Visser,
D. P. Rojas,
F. Gandra,
M. Almeida
Abstract:
Heat capacity experiments, crystal structure determination and transmission electron microscopy have been carried out on U3Cu3Sn4 single-crystals. U3Cu3Sn4 was confirmed to be a heavy-fermion antiferromagnet (TN=13(1) K) with a low temperature electronic heat capacity coefficient gamma=390 mJ/molUK2. Low temperature heat capacity experiments on a U3Ni3Sn4 single-crystal indicate that below 0.4 K…
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Heat capacity experiments, crystal structure determination and transmission electron microscopy have been carried out on U3Cu3Sn4 single-crystals. U3Cu3Sn4 was confirmed to be a heavy-fermion antiferromagnet (TN=13(1) K) with a low temperature electronic heat capacity coefficient gamma=390 mJ/molUK2. Low temperature heat capacity experiments on a U3Ni3Sn4 single-crystal indicate that below 0.4 K there is a crossover between the previously observed non-Fermi liquid behavior and a Fermi liquid state.
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Submitted 13 March, 2000;
originally announced March 2000.
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Evidence for a two component magnetic response in UPt3
Authors:
A. Yaouanc,
P. Dalmas de Reotier,
F. N. Gygax,
A. Schenck,
A. Amato,
C. Baines,
P. C. M. Gubbens,
C. T. Kaiser,
A. de Visser,
R. J. Keizer,
A. Huxley,
A. A. Menovsky
Abstract:
The magnetic response of the heavy fermion superconductor UPt_3 has been investigated on a microscopic scale by muon Knight shift studies. Two distinct and isotropic Knight shifts have been found for the field in the basal plane. While the volume fractions associated with the two Knight shifts are approximately equal at low and high temperatures, they show a dramatic and opposite temperature dep…
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The magnetic response of the heavy fermion superconductor UPt_3 has been investigated on a microscopic scale by muon Knight shift studies. Two distinct and isotropic Knight shifts have been found for the field in the basal plane. While the volume fractions associated with the two Knight shifts are approximately equal at low and high temperatures, they show a dramatic and opposite temperature dependence around T_N. Our results are independent on the precise muon localization site. We conclude that UPt_3 is characterized by a two component magnetic response.
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Submitted 1 February, 2000;
originally announced February 2000.
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Band structure and transport studies on PdAl2Cl8-intercalated graphite
Authors:
R. T. F. van Schaijk,
A. de Visser,
E. McRae,
B. Sundqvist,
T. Wagberg,
R. Vangelisti
Abstract:
The 2D Fermi surface of 1st stage PdAl2Cl8 acceptor-type graphite intercalation compounds (GICs) has been investigated using the Shubnikov-de Haas (SdH) effect. One fundamental frequency is observed, the angular variation of which confirms its strongly 2D nature, as previously found through electrical conductivity measurements. The energy spectrum can be described by the 2D band structure model…
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The 2D Fermi surface of 1st stage PdAl2Cl8 acceptor-type graphite intercalation compounds (GICs) has been investigated using the Shubnikov-de Haas (SdH) effect. One fundamental frequency is observed, the angular variation of which confirms its strongly 2D nature, as previously found through electrical conductivity measurements. The energy spectrum can be described by the 2D band structure model proposed by Blinowski et al. We obtain the following parameter values: intraplane C-C interaction energy gamma_0 = 2.7 eV, Fermi energy E_F = -1.1 eV and carrier density n_SdH= 1.1x10^27 m^-3. Some fewer details are presented on stage 2 and 3 materials.
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Submitted 15 June, 2001; v1 submitted 1 November, 1999;
originally announced October 1999.
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Wavelength dependent negative and positive persistent photoconductivity in Sn delta-doped GaAs structures
Authors:
V. A. Kulbachinskii,
V. G. Kytin,
A. V. Golikov,
R. A. Lunin,
R. T. F. van Schaijk,
A. de Visser,
A. P. Senichkin,
A. S. Bugaev
Abstract:
The photoconductivity of GaAs structures delta-doped by Sn has been investigated for wavelengths lambda= 650-1200 nm in the temperature interval T= 4.2-300 K. The electron densities and mobilities, before and after illumination, have been determined by magnetoresistance, Shubnikov-de Haas effect and Hall effect measurements, in high magnetic fields. For the heavily doped structures (n_H> 2x10^13…
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The photoconductivity of GaAs structures delta-doped by Sn has been investigated for wavelengths lambda= 650-1200 nm in the temperature interval T= 4.2-300 K. The electron densities and mobilities, before and after illumination, have been determined by magnetoresistance, Shubnikov-de Haas effect and Hall effect measurements, in high magnetic fields. For the heavily doped structures (n_H> 2x10^13 cm^-2) we observe under illumination by light with wavelengths larger than the band-gap wavelength of the host material (lambda= 815 nm at T= 4.2 K) first positive (PPPC) and then negative (NPPC) persistent photoconductivity. The NPPC is attributed to the ionisation of DX centres and PPPC is explained by the excitation of electrons from Cr impurity states in the substrate. For lambda< 815 nm in addition the excitation of electron over the band gap of GaAs contributes to the PPPC. For the lightly doped structures (n_H<= 2x10^13 cm^-2) the photoconductivity effect is always positive.
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Submitted 16 June, 2000; v1 submitted 14 September, 1999;
originally announced September 1999.
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Muon localization site in U(Pt,Pd)3
Authors:
A. Schenck,
R. J. Keizer,
A. de Visser,
A. Amato,
D. Andreica,
F. N. Gygax,
M. Pinkpank,
P. Estrela,
M. J. Graf,
A. A. Menovsky,
J. J. M. Franse
Abstract:
The angular and temperature (10-250 K) variation of the Knight shift of single-crystalline U(Pt0.95Pd0.05)3 has been measured in transverse field (B=0.6 T) mSR experiments. By analysing the temperature variation of the Knight shift with a modified Curie-Weiss expression the muon localization site in this hexagonal material is determined at (0,0,0).
The angular and temperature (10-250 K) variation of the Knight shift of single-crystalline U(Pt0.95Pd0.05)3 has been measured in transverse field (B=0.6 T) mSR experiments. By analysing the temperature variation of the Knight shift with a modified Curie-Weiss expression the muon localization site in this hexagonal material is determined at (0,0,0).
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Submitted 16 June, 2000; v1 submitted 14 September, 1999;
originally announced September 1999.
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Search for a quantum phase transition in U(Pt_(1-x)Pd_x)_3
Authors:
M. J. Graf,
R. J. Keizer,
A. de Visser,
S. T. Hannahs
Abstract:
Pd in U(Pt_{1-x}Pd_x)_3 suppresses the superconducting T_c to 0 K at critical concentration x_c of 0.007 and induces a conventional AFM state for x > x_c. The resistivity below 1 K shows a deviation from Fermi liquid behavior described by a power law where the exponent ranges from 2 at x=0 to 1.6 for x = x_c. This suggests that a quantum phase transition (QPT) may exist near x_c associated with…
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Pd in U(Pt_{1-x}Pd_x)_3 suppresses the superconducting T_c to 0 K at critical concentration x_c of 0.007 and induces a conventional AFM state for x > x_c. The resistivity below 1 K shows a deviation from Fermi liquid behavior described by a power law where the exponent ranges from 2 at x=0 to 1.6 for x = x_c. This suggests that a quantum phase transition (QPT) may exist near x_c associated with either the magnetic or superconducting transition temperature = 0 K. Transport for a sample with x = 0.004 < x_c has constant exponent of 1.77 as increasing pressure suppresses T_c to 0 K, suggesting that if a QPT exists it may be associated with the magnetic transition.
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Submitted 26 August, 1999;
originally announced August 1999.
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Resistivity of non-Fermi liquid U2Pt2In under pressure
Authors:
P. Estrela,
T. Naka,
A. de Visser,
F. R. de Boer,
L. C. J. Pereira,
M. Almeida
Abstract:
Non-Fermi liquid behaviour in single-crystalline U2Pt2In has been studied by means of resistivity experiments (I||c) under hydrostatic pressure (P<1.5 GPa). At ambient pressure the resistivity rho(T) follows a power law rho~T^alpha with alpha~0.5. Upon applying pressure alpha increases. For P>1 GPa a minimum develops in rho(T). A study of the field dependence of the minimum confirms its magnetic…
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Non-Fermi liquid behaviour in single-crystalline U2Pt2In has been studied by means of resistivity experiments (I||c) under hydrostatic pressure (P<1.5 GPa). At ambient pressure the resistivity rho(T) follows a power law rho~T^alpha with alpha~0.5. Upon applying pressure alpha increases. For P>1 GPa a minimum develops in rho(T). A study of the field dependence of the minimum confirms its magnetic origin. The ratio c/a is proposed as the effective control parameter, rather than the unit cell volume.
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Submitted 20 July, 1999;
originally announced July 1999.
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Sn delta-doping in GaAs
Authors:
V. A. Kulbachinskii,
V. G. Kytin,
R. A. Lunin,
A. V. Golikov,
V. G. Mokerov,
A. S. Bugaev,
A. P. Senichkin,
R. T. F. van Schaijk,
A. de Visser,
P. M. Koenraad
Abstract:
We have prepared a number of GaAs structures delta-doped by Sn using the well-known molecular beam epitaxy growth technique. The samples obtained for a wide range of Sn doping densities were characterised by magnetotransport experiments at low temperatures and in high magnetic fields up to 38 T. Hall-effect and Shubnikov-de Haas measurements show that the electron densities reached are higher th…
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We have prepared a number of GaAs structures delta-doped by Sn using the well-known molecular beam epitaxy growth technique. The samples obtained for a wide range of Sn doping densities were characterised by magnetotransport experiments at low temperatures and in high magnetic fields up to 38 T. Hall-effect and Shubnikov-de Haas measurements show that the electron densities reached are higher than for other delta-dopants, like Si and Be. The maximum carrier density determined by the Hall effect equals 8.4x10^13 cm^-2. For all samples several Shubnikov-de Haas frequencies were observed, indicating the population of multiple subbands. The depopulation fields of the subbands were determined by measuring the magnetoresistance with the magnetic field in the plane of the delta-layer. The experimental results are in good agreement with selfconsistent bandstructure calculations. These calculation shows that in the sample with the highest electron density also the conduction band at the L point is populated.
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Submitted 20 July, 1999;
originally announced July 1999.
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Magnetism in heavy-fermion U(Pt,Pd)3 studied by mSR
Authors:
R. J. Keizer,
A. de Visser,
A. A. Menovsky,
J. J. M. Franse,
A. Amato,
F. N. Gygax,
M. Pinkpank,
A. Schenck
Abstract:
We report mSR experiments carried out on a series of heavy-electron pseudobinary compounds U(Pt1-xPdx)3 (x<=0.05). For x<=0.005 the zero-field muon depolarisation is described by the Kubo-Toyabe function. However the temperature variation of the Kubo-Toyabe relaxation rate does not show any sign of the small-moment antiferromagnetic phase with TN~6 K (signalled by neutron diffraction), in contra…
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We report mSR experiments carried out on a series of heavy-electron pseudobinary compounds U(Pt1-xPdx)3 (x<=0.05). For x<=0.005 the zero-field muon depolarisation is described by the Kubo-Toyabe function. However the temperature variation of the Kubo-Toyabe relaxation rate does not show any sign of the small-moment antiferromagnetic phase with TN~6 K (signalled by neutron diffraction), in contrast to previous reports. The failure to detect the small ordered moment suggests it has a fluctuating (> 10 MHz) nature, which is consistent with the interpretation of NMR data. For 0.01<=x<=0.05 the muon depolarisation in the ordered state is described by two terms of equal amplitude: an exponentially damped spontaneous oscillation and a Lorentzian Kubo-Toyabe function. These terms are associated with antiferromagnetic order with substantial moments. The Knight-shift measured in a magnetic field of 0.6 T on single-crystalline U(Pt0.95Pd0.05)3 in the paramagnetic state shows two signals for B perpendicular to c, while only one signal is observed for B||c. The observation of two signals for B perpendicular to c, while there is only one muon localisation site (0,0,0), points to the presence of two spatially distinct regions of different magnetic response.
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Submitted 14 September, 1999; v1 submitted 23 April, 1999;
originally announced April 1999.
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Superconductivity in heavy-fermion U(Pt,Pd)3 and its interplay with magnetism
Authors:
R. J. Keizer,
A. de Visser,
M. J. Graf,
A. A. Menovsky,
J. J. M. Franse
Abstract:
The effect of Pd doping on the superconducting phase diagram of the unconventional superconductor UPt3 has been measured by (magneto)resistance, specific heat, thermal expansion and magnetostriction. Experiments on single- and polycrystalline U(Pt1-xPdx)3 for x<= 0.006 show that the superconducting transition temperatures of the A phase, Tc+, and of the B phase, Tc-, both decrease, while the spl…
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The effect of Pd doping on the superconducting phase diagram of the unconventional superconductor UPt3 has been measured by (magneto)resistance, specific heat, thermal expansion and magnetostriction. Experiments on single- and polycrystalline U(Pt1-xPdx)3 for x<= 0.006 show that the superconducting transition temperatures of the A phase, Tc+, and of the B phase, Tc-, both decrease, while the splitting DTc increases at a rate of 0.30(2)K/at.%Pd. We find that DTc(x) correlates with an increase of the weak magnetic moment m(x) upon Pd doping. This provides further evidence for Ginzburg-Landau scenarios with magnetism as the symmetry breaking field, i.e. the 2D E representation and the 1D odd parity model. Only for small splittings DTc is proportional to m^2(Tc+) (DTc<= 0.05 K) as predicted. The results at larger splittings call for Ginzburg-Landau expansions beyond 4th order. The tetracritical point in the B-T plane persists till at least x= 0.002 for B perpendicular to c, while it is rapidly suppressed for B||c. Upon alloying the A and B phases gain stability at the expense of the C phase.
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Submitted 22 March, 1999;
originally announced March 1999.
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Neutron-diffraction study of the evolution of antiferromagnetic order in UPt3 doped with Pd
Authors:
R. J. Keizer,
A. de Visser,
A. A. Menovsky,
J. J. M. Franse,
B. Fak,
J. -M. Mignot
Abstract:
Neutron-diffraction experiments have been carried out on U(Pt1-xPdx)3 single crystals (x<= 0.05). The small-moment antiferromagnetic order (SMAF) reported for pure UPt3 is robust upon doping and persists till at least x= 0.005. The ordered moment grows from 0.018(2) mB/U-atom for pure UPt3 to 0.048(8) mB/U-atom for x= 0.005. The Neel temperature, TN, is approximately 6 K and does not vary with P…
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Neutron-diffraction experiments have been carried out on U(Pt1-xPdx)3 single crystals (x<= 0.05). The small-moment antiferromagnetic order (SMAF) reported for pure UPt3 is robust upon doping and persists till at least x= 0.005. The ordered moment grows from 0.018(2) mB/U-atom for pure UPt3 to 0.048(8) mB/U-atom for x= 0.005. The Neel temperature, TN, is approximately 6 K and does not vary with Pd contents. The order parameter for the SMAF has an unusual quasi-linear temperature variation. For x>= 0.01 a large moment antiferromagnetic phase (LMAF) is found. For this phase at optimum doping (x= 0.05) TN attains a maximum value of 5.8 K and the ordered moment equals 0.63(5) mB/U-atom. TN(x) for the LMAF follows a Doniach-type phase diagram. We infer that the antiferromagnetic instability in U(Pt1-xPdx)3 is located in the range 0.5-1 at.% Pd.
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Submitted 22 March, 1999;
originally announced March 1999.
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Studies of superconductivity in U(Pt1-xPdx)3 for x < 0.006
Authors:
M. J. Graf,
R. J. Keizer,
A. de Visser,
J. J. M. Franse
Abstract:
We report measurements of the specific heat and resistivity (T < 1 K) for high quality polycrystals of U(Pt1-xPdx)3 with x < 0.006. The Tc-x phase diagram can be constructed, and superconductivity is destroyed for x = 0.006; this is approximately the same concentration above which the onset of large-moment antiferromagnetism is observed to occur. The splitting of the double superconducting trans…
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We report measurements of the specific heat and resistivity (T < 1 K) for high quality polycrystals of U(Pt1-xPdx)3 with x < 0.006. The Tc-x phase diagram can be constructed, and superconductivity is destroyed for x = 0.006; this is approximately the same concentration above which the onset of large-moment antiferromagnetism is observed to occur. The splitting of the double superconducting transition increases smoothly with increasing Pd content, and is large enough that for Pd concentrations 0.004 < x < 0.006 only the superconducting A-phase will be present.
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Submitted 16 March, 1999;
originally announced March 1999.
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Thermodynamics of CeNiSn at low temperatures and in weak magnetic fields
Authors:
K. A. Kikoin,
M. N. Kiselev,
A. S. Mishchenko,
A. de Visser
Abstract:
Detailed experimental and theoretical studies of the low-temperature specific heat, magnetic susceptibility, thermal expansion and magnetostriction of the orthorhombic compound CeNiSn are presented. All anomalies observed in the thermodynamic and magnetic properties of CeNiSn are explained in a framework of a model of metallic Kondo lattice with well developed spin-liquid-type excitations. The p…
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Detailed experimental and theoretical studies of the low-temperature specific heat, magnetic susceptibility, thermal expansion and magnetostriction of the orthorhombic compound CeNiSn are presented. All anomalies observed in the thermodynamic and magnetic properties of CeNiSn are explained in a framework of a model of metallic Kondo lattice with well developed spin-liquid-type excitations. The pseudogap behavior of these excitations appears due to interplay between spin-fermions and soft crystal-field (CF) states. The thermodynamic relations for the spin liquid are derived. Together with the explanation of inelastic neutron scattering spectra given earlier within a same approach these studies of the low-temperature thermodynamics and magnetic response give a consistent description of the nature of anomalies in the low-temperature thermodynamics of perfect and imperfect CeNiSn crystals.
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Submitted 14 March, 1999;
originally announced March 1999.
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Suppression of Superconductivity in Single Crystals of UPt_3 by Pd Substitution
Authors:
M. J. Graf,
R. J. Keizer,
A. de Visser,
A. A. Menovsky,
J. J. M. Franse
Abstract:
The suppression of superconductivity by substitution effects has been measured in high quality single crystals of U(Pt_{1-x} Pd_x)_3 with 0 <= x <= 0.002. While the superconducting transition temperature T_c varies linearly with residual resistivity r_0, consistent with pair-breaking by impurity potential scattering, the rate of suppression of T_c with r_0 is much larger for Pd substitution than…
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The suppression of superconductivity by substitution effects has been measured in high quality single crystals of U(Pt_{1-x} Pd_x)_3 with 0 <= x <= 0.002. While the superconducting transition temperature T_c varies linearly with residual resistivity r_0, consistent with pair-breaking by impurity potential scattering, the rate of suppression of T_c with r_0 is much larger for Pd substitution than for other impurity substitutions or by increased defect density. This effect is correlated with an increase in the inelastic scattering coefficient, and may be related to Pd-induced changes in the magnetic fluctuation spectrum.
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Submitted 4 March, 1999;
originally announced March 1999.
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Probing the plateau-insulator quantum phase transition in the quantum Hall regime
Authors:
R. T. F. van Schaijk,
A. de Visser,
S. Olsthoorn,
H. P. Wei,
A. M. M. Pruisken
Abstract:
We report quantum Hall experiments on the plateau-insulator transition in a low mobility In_{.53} Ga_{.47} As/InP heterostructure. The data for the longitudinal resistance ρ_{xx} follow an exponential law and we extract a critical exponent κ= .55 \pm .05 which is slightly different from the established value κ= .42 \pm .04 for the plateau transitions. Upon correction for inhomogeneity effects, w…
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We report quantum Hall experiments on the plateau-insulator transition in a low mobility In_{.53} Ga_{.47} As/InP heterostructure. The data for the longitudinal resistance ρ_{xx} follow an exponential law and we extract a critical exponent κ= .55 \pm .05 which is slightly different from the established value κ= .42 \pm .04 for the plateau transitions. Upon correction for inhomogeneity effects, which cause the critical conductance σ_{xx}^* to depend marginally on temperature, our data indicate that the plateau-plateau and plateau- insulator transitions are in the same universality class.
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Submitted 2 December, 1998;
originally announced December 1998.
