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Ultrafast Third-Order Nonlinear Optical Response of Charge Coupled Gold Nanoparticle-Ge24Se76 Heterostructure
Authors:
Vinod Kumar,
Rituraj Sharma,
Abhishek Bhatt,
I. Csarnovics,
Petr Nemec,
H. Jain,
K. V. Adarsh
Abstract:
The donor-acceptor interaction of a charge-coupled heterostructure encompassing a metal and an amorphous semiconductor subjected to a laser field has many potential applications in the realm of nonlinear optics. In this work, we fabricate an electron donor gold nanoparticle (AuNP) and acceptor amorphous Ge24Se76 heterostructure on a quartz substrate using a sequential thermal evaporation technique…
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The donor-acceptor interaction of a charge-coupled heterostructure encompassing a metal and an amorphous semiconductor subjected to a laser field has many potential applications in the realm of nonlinear optics. In this work, we fabricate an electron donor gold nanoparticle (AuNP) and acceptor amorphous Ge24Se76 heterostructure on a quartz substrate using a sequential thermal evaporation technique. In this charge-coupled heterostructure, we demonstrate the ultrafast third-order nonlinear absorptive and refractive response and their sign reversal compared to pristine Ge24Se76. Enhanced optical nonlinearity in these heterostructures of varying plasmonic wavelengths is due to charge transfer, verified by the Raman spectroscopy. Further, the ultrafast transient absorption measurements support the thesis of charge transfer in the AuNP/Ge24Se76 heterostructure. These findings open up exciting opportunities for developing novel device technologies with far-reaching applications in nonlinear optics.
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Submitted 6 July, 2023;
originally announced July 2023.
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Room temperature electron-hole liquid phase in monolayer MoSi$_2$Z$_4$ (Z = pinctogen)
Authors:
Pushpendra Yadav,
K. V. Adarsh,
Amit Agarwal
Abstract:
Photo-excited electrons and holes in insulators, above a critical density and below a critical temperature, can condense to form an electron-hole liquid (EHL) phase. However, observing the EHL phase at room temperature is extremely challenging. Here, we introduce the monolayer MoSi$_2$Z$_4$ (Z= N, As, P) series of compounds as a promising platform for observing the EHL phase at room temperature. T…
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Photo-excited electrons and holes in insulators, above a critical density and below a critical temperature, can condense to form an electron-hole liquid (EHL) phase. However, observing the EHL phase at room temperature is extremely challenging. Here, we introduce the monolayer MoSi$_2$Z$_4$ (Z= N, As, P) series of compounds as a promising platform for observing the EHL phase at room temperature. The higher impact of the Coulomb interactions in two dimensions helps these monolayers support the EHL phase with an increased EHL binding energy and transition temperature, along with strongly bound excitons. Our findings motivate further exploration of the MoSi$_2$Z$_4$ monolayers for realizing the EHL phase at high temperatures to harness collective phenomena for optoelectronic applications.
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Submitted 11 March, 2023;
originally announced March 2023.
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Strongly bound excitons in monolayer MoSi$_2$Z$_4$ (Z = pnictogen)
Authors:
Pushpendra Yadav,
Bramhachari Khamari,
Bahadur Singh,
K. V. Adarsh,
Amit Agarwal
Abstract:
Reduced dielectric screening in two-dimensional materials enables bound excitons, which modifies their optical absorption and optoelectronic response even at room temperature. Here, we demonstrate the existence of excitons in the bandgap of the monolayer family of the newly discovered synthetic MoSi$_2$Z$_4$ (Z = N, P, and As) series of materials. All three monolayers support several bright and st…
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Reduced dielectric screening in two-dimensional materials enables bound excitons, which modifies their optical absorption and optoelectronic response even at room temperature. Here, we demonstrate the existence of excitons in the bandgap of the monolayer family of the newly discovered synthetic MoSi$_2$Z$_4$ (Z = N, P, and As) series of materials. All three monolayers support several bright and strongly bound excitons with binding energies varying from 1 eV to 1.35 eV for the lowest energy exciton resonances. On increasing the pump fluence, the exciton binding energies get renormalized, leading to a redshift-blueshift crossover. Our study shows that the MoSi$_2$Z$_4$ series of monolayers offer an exciting test-bed for exploring the physics of strongly bound excitons and their non-equilibrium dynamics.
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Submitted 10 July, 2022;
originally announced July 2022.
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Two-dimensional ReS2: Solution to the Unresolved Queries on Its Structure and Inter-layer Coupling Leading to Potential Optical Applications
Authors:
Janardhan Rao Gadde+,
Anasuya Karmakar+,
Tuhin Kumar Maji+,
Subhrajit Mukherjee,
Rajath Alexander,
Anjanashree M R Sharma,
Sarthak Das,
Anirban Mondal,
Kinshuk Dasgupta,
Akshay Naik,
Kausik Majumdar,
Ranjit Hawaldar,
K V Adarsh,
Samit Kumar Ray,
Debjani Karmakar
Abstract:
Over the last few years, ReS2 has generated a myriad of unattended queries regarding its structure, the concomitant thickness dependent electronic properties and apparently contrasting experimental optical response. In this work, with elaborate first-principles investigations, using density functional theory (DFT) and time-dependent DFT (TDDFT), we identify the structure of ReS2, which is capable…
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Over the last few years, ReS2 has generated a myriad of unattended queries regarding its structure, the concomitant thickness dependent electronic properties and apparently contrasting experimental optical response. In this work, with elaborate first-principles investigations, using density functional theory (DFT) and time-dependent DFT (TDDFT), we identify the structure of ReS2, which is capable of reproducing and analyzing the layer-dependent optical response. The theoretical results are further validated by an in-depth structural, chemical, optical and optoelectronic analysis of the large-area ReS2 thin films, grown by chemical vapor deposition (CVD) process. Micro-Raman (MR), X-ray photoelectron spectroscopy (XPS), cross-sectional transmission electron microscopy (TEM) and energy-dispersive X-ray analysis (EDAX) have enabled the optimization of the uniform growth of the CVD films. The correlation between the layer-dependent optical and electronic properties of the excited states was established by static photoluminescence (PL) and transient absorption (TA) measurements. Sulfur vacancy-induced localized mid-gap states render a significantly long life-time of the excitons in these films. The ionic gel top-gated photo-detectors, fabricated from the as-prepared CVD films, exhibit a large photo-response of ~ 5 A/W and a remarkable detectivity of ~ 1011 Jones. The outcome of the present work will be useful to promote the application of vertically grown large-area films in the field of optics and opto-electronics.
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Submitted 1 May, 2021; v1 submitted 26 March, 2021;
originally announced March 2021.
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Combinatorial Large-area MoS2/Anatase-TiO2 interface: A Pathway to Emergent Optical and Opto-electronic Functionalities
Authors:
Tuhin Kumar Maji,
J R Aswin,
Subhrajit Mukherjee,
Rajath Alexander,
Anirban Mondal,
Sarthak Das,
R. K. Sharma,
N. K. Chakraborty,
K. Dasgupta,
Anjanashree M R Sharma,
Ranjit Hawalder,
Manjiri Pandey,
Akshay Naik,
Kausik Majumdar,
Samir Kumar Pal,
K V Adarsh,
Samit Kumar Ray,
Debjani Karmakar
Abstract:
Interface of transition metal dichalcogenide (TMDC) and high-k dielectric transition metal oxides (TMO) had triggerred umpteen discourses due to the indubitable impact of TMO in reducing the contact resistances and restraining the Fermi-level pinning for the metal-TMDC contacts. In the present work, we focus on the unresolved tumults of large-area TMDC/TMO interfaces, grown by adopting different t…
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Interface of transition metal dichalcogenide (TMDC) and high-k dielectric transition metal oxides (TMO) had triggerred umpteen discourses due to the indubitable impact of TMO in reducing the contact resistances and restraining the Fermi-level pinning for the metal-TMDC contacts. In the present work, we focus on the unresolved tumults of large-area TMDC/TMO interfaces, grown by adopting different techniques. Here, on a pulsed laser deposited (PLD) MoS2 thin film, a layer of TiO2 is grown by using both atomic layer deposition (ALD) and PLD. These two different techniques emanate TiO2 layers with different crystalline properties, thicknesses and interfacial morphologies, subsequently influencing the electronic and optical properties of the interfaces. In addition, they manifest a boost in the extent of p-type doping with increasing thickness of TiO2, as emerged after analyzing the core-level shifts of the X-ray photoelectron spectra (XPS). Density functional analysis of the MoS2/Anatase-TiO2 interfaces, for pristine and in presence of a wide range of interfacial defects, could explain the interdependence of doping and the terminating atomic-surface of TiO2 on MoS2. The optical properties of the interface, encompassing the photoluminescence, transient absorption and z-scan two-photon absorption indicate the presence of defect-induced localized mid-gap levels in MoS2/TiO2 (PLD), resulting quenched exciton signals. On the contrary, the relatively defect-free interface in MoS2/TiO2 (ALD) demonstrates a clear presence of both A and B excitons of MoS2. From the investigation of optical properties, we indicate that MoS2/TiO2 (PLD) interface may act as a promising saturable absorber. Moreover, MoS2/TiO2 (PLD) interface had resulted a better photo-transport. A potential application of MoS2/TiO2 (PLD) is demonstrated by the fabrication of a p-type photo-transistor with the ionic-gel top gate.
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Submitted 28 January, 2021;
originally announced January 2021.
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Pulse-duration dependence of saturable and reverse saturable absorption in ZnCo2O4 microflowers
Authors:
Pritam Khan,
Rajesh Kumar Yadav,
Anirban Mondal,
Chandra Sekhar Rout,
K. V. Adarsh
Abstract:
We employed open-aperture Z-scan technique to unveil the third-order optical nonlinearity in ZnCo2O4 (ZCO) microflowers. Our results indicate that intersystem crossing (ISC) lifetime can be used as simple tool to demonstrate remarkably contrasting optical nonlinearity in ZCO. Ultrafast transient absorption measurements reveal that ISC from singlet to triplet state takes place in 5 ps. For femtosec…
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We employed open-aperture Z-scan technique to unveil the third-order optical nonlinearity in ZnCo2O4 (ZCO) microflowers. Our results indicate that intersystem crossing (ISC) lifetime can be used as simple tool to demonstrate remarkably contrasting optical nonlinearity in ZCO. Ultrafast transient absorption measurements reveal that ISC from singlet to triplet state takes place in 5 ps. For femtosecond laser pulses, when the pulse duration is shorter than ISC lifetime, saturable absorption (SA) takes place for all intensities. On the contrary, when the pulse duration is longer than ISC for nanosecond excitation, we observe transition from SA to reverse SA (RSA) at higher intensities via excited-state absorption. We envisage that benefiting from SA and RSA, ZCO emerges as potential candidate for mode locking and optical limiting devices.
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Submitted 2 March, 2021; v1 submitted 28 September, 2020;
originally announced September 2020.
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Intriguing electronic and optical prospects of FCC bimetallic two-dimensional heterostructures: epsilon near-zero behaviour in UV-vis range
Authors:
Tuhin Kumar Maji,
Kumar Vaibhav,
Ranjit Hawaldar,
K. V. Adarsh,
Samir Kumar Pal,
Debjani Karmakar
Abstract:
Higher superconducting critical temperature and large-area epsilon-near-zero interfaces are two long-standing goals of Condensed Matter Physics and Optics. Motivated by the recent advancements of experimental interests on metallic nanostructures, we have theoretically investigated some selected bimetallic FCC combinations starting from large-area interface to embedded and doped two-dimensional (2D…
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Higher superconducting critical temperature and large-area epsilon-near-zero interfaces are two long-standing goals of Condensed Matter Physics and Optics. Motivated by the recent advancements of experimental interests on metallic nanostructures, we have theoretically investigated some selected bimetallic FCC combinations starting from large-area interface to embedded and doped two-dimensional (2D) nanostructures. Using different first-principles techniques, encompassing density functional theory (DFT), time-dependent DFT (TDDFT), phonon and DFT-coupled quantum transport, we propose the prospects of some selective bimetallic nanostructures like Au/Ag and Pt/Pd to exhibit exotic electronic phenomena. For 2D doped and embedded nanostructures of these systems, non-trivial band-structure and Fermi-surface topology may be emblematic to the presence of instabilities like charge density waves. We specifically highlight the optical attributes extracted from the TDDFT calculations for these systems, where interfacial morphology induced band-localization leads to near-zero behavior of both real and imaginary parts of the dynamical dielectric response is observed in the ultra-violet to visible (UV-vis) optical range. Low-energy intra-band plasmonic oscillations present for individual metallic surfaces are completely suppressed for embedded and doped nanostructures. Phonon-dispersion of the model systems indicates the presence of soft phonons and dynamical instabilities. Quantum transport calculations on simplest possible device made out of these bimetallic systems reveals generation of highly transmitting pockets over the cross-sectional area for some selected device geometry. We envisage that, if observed experimentally, such systems may lead to many fascinating physics and applications in many diverse fields ranging from condensed matter physics to optics or even more.
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Submitted 10 April, 2020; v1 submitted 26 June, 2019;
originally announced June 2019.
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Intricate modulation of interlayer coupling at GO/MoSe2 interface: application in time-dependent optics and device transport
Authors:
Tuhin Kumar Maji,
Kumar Vaibhav,
Samir Kumar Pal,
Kausik Majumdar,
K. V. Adarsh,
Debjani Karmakar
Abstract:
In GO/MoSe2 semiconductor heterostructure, we have demonstrated a subtle control on the doping dynamics by modulating interlayer coupling through the combination of strain-reducing relative rotation of the constituting layers and variation of ligand type and concentration. By first-principles calculations incorporating spin-orbital coupling, we have investigated the impact of variable interlayer c…
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In GO/MoSe2 semiconductor heterostructure, we have demonstrated a subtle control on the doping dynamics by modulating interlayer coupling through the combination of strain-reducing relative rotation of the constituting layers and variation of ligand type and concentration. By first-principles calculations incorporating spin-orbital coupling, we have investigated the impact of variable interlayer coupling in introducing non-collinear magnetic behaviour in the heterostructure. The outcome of varying carrier type and their respective concentrations are investigated by static as well as time dependent density functional calculations, which indicates presence of optical anisotropy and time-dependent optical phenomena like exciton quenching and band-gap renormalization. Performance of such heterostructures as channel material in devices with top and edge metal contacts is analyzed. Our self-consistent quantum transport calculations have evinced that the nature of interface-induced variation in doping is extrapolated for devices only in the case of top contacts. The edge contact, although exhibits a better transmission, are inefficient for sensing the ligand-induced doping modulation introduced via vertical inter-layer charge transfer.
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Submitted 4 December, 2018;
originally announced December 2018.
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Kinetics of photo-dissolution within Ag/As2S3 heterostructure
Authors:
Pritam Khan,
Yinsheng Xu,
William Leon,
K. V. Adarsh,
Dmitri Vezenov,
Ivan Biaggio,
Himanshu Jain
Abstract:
Chalcogenide glass-silver heterostructures are candidates for photoresist and diffractive optical applications. To optimize their processing, we report the kinetics of Ag photo-dissolution in As2S3 matrix using in-situ optical transmission/reflection measurements and real time atomic force microscopy (AFM) imaging under optical illumination. The results indicate that photodissolution occurs in thr…
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Chalcogenide glass-silver heterostructures are candidates for photoresist and diffractive optical applications. To optimize their processing, we report the kinetics of Ag photo-dissolution in As2S3 matrix using in-situ optical transmission/reflection measurements and real time atomic force microscopy (AFM) imaging under optical illumination. The results indicate that photodissolution occurs in three stages with the extent and kinetics of each stage depending strongly on Ag film thickness. By contrast, the photo-dissolution is found to be independent of As2S3 matrix thickness. The extent of three stages also depends strongly on the laser dose and can be reduced to two stages at higher laser fluence. A comparative study of two oppositely stacked sample configurations: As2S3/Ag/glass and Ag/As2S3/glass show that the heterostructures respond differently to light illumination. For the former, Ag dissolves completely into As2S3 matrix at a faster rate than for the latter case. The origin of this difference is established by energy dispersive X-ray spectroscopy and AFM measurements.
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Submitted 10 September, 2018; v1 submitted 28 June, 2018;
originally announced July 2018.
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Designing hybrid graphene oxide- gold nanoparticles for nonlinear optical response: Experiment and theory
Authors:
Rajesh Kumar Yadav,
J. Aneesh,
Rituraj Sharma,
P. Abhiramnath,
Tuhin Kumar Maji,
Ganesh Ji Omar,
A. K. Mishra,
Debjani Karmakar,
K. V. Adarsh
Abstract:
Nonlinear optical absorption of light by materials are weak due to its perturbative nature, although a strong nonlinear response is of crucial importance to applications in optical limiting and switching. Here we demonstrate experimentally and theoretically an extremely efficient scheme of excited state absorption by charge transfer between donor and acceptor materials as the new method to enhance…
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Nonlinear optical absorption of light by materials are weak due to its perturbative nature, although a strong nonlinear response is of crucial importance to applications in optical limiting and switching. Here we demonstrate experimentally and theoretically an extremely efficient scheme of excited state absorption by charge transfer between donor and acceptor materials as the new method to enhance the nonlinear absorption by orders of magnitude. With this idea, we have demonstrated strong excited state absorption (ESA) in reduced graphene oxide that otherwise shows increased transparency at high fluence and enhancement of ESA by one orders of magnitude in graphene oxide by attaching gold nanoparticles (AuNP) in the tandem configuration that acts as an efficient charge transfer pair when excited at the plasmonic wavelength. To explain the unprecedented enhancement, we have developed a five-level rate equation model based on the charge transfer between the two materials and numerically simulated the results. To understand the correlation of interfacial charge-transfer with the concentration and type of the functional ligands attached to the graphene oxide sheet, we have investigated the AuNP-graphene oxide interface with various possible ligand configurations from first-principles calculations. By using the strong ESA of our hybrid materials, we have fabricated liquid cell-based high-performance optical limiters with important device parameters better than that of the benchmark optical limiters.
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Submitted 29 March, 2018;
originally announced March 2018.
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Ultrafast light-induced softening of chalcogenide thin films above the rigidity percolation transition
Authors:
Pritam Khan,
Rajesh Kumar Yadav,
K. V. Adarsh
Abstract:
Little is known about the role of network rigidity in light-induced structural rearrangements in network glasses due to a lack of supporting experiments and theories. In this report, we demonstrate for the first time the ultrafast structural rearrangements manifested as induced absorption (IA) over a broad spectral range in a-GexAs35-xSe65 thin films above the mean-field rigidity percolation trans…
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Little is known about the role of network rigidity in light-induced structural rearrangements in network glasses due to a lack of supporting experiments and theories. In this report, we demonstrate for the first time the ultrafast structural rearrangements manifested as induced absorption (IA) over a broad spectral range in a-GexAs35-xSe65 thin films above the mean-field rigidity percolation transition, quantified by the mean coordination number <r> = 2.40. The IA spectrum arising from self-trapped excitons, induced structural rearrangements by softening the glass network that strikingly reveal two relaxation mechanisms which differ by one order of magnitude. The fast kinetics of electron-lattice interaction occurs within 1 ps, exhibits a weak dependence on rigidity and dominates in the sub-bandgap region. In a stark contrast, the slow kinetics are associated with the structural changes in the bandgap region and depends strongly on network rigidity. Our results further demonstrate that amplitude of IA scales a linear relationship with excitation fluence which provides a unique way to induce structural rearrangements in over-coordinated network to exploit it for practical purposes. Our results modify the conventional concept of rigidity dependence of light-induced effects in network glasses, when excited with an ultrafast laser.
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Submitted 10 September, 2018; v1 submitted 1 March, 2018;
originally announced March 2018.
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Enhancement of Two photon absorption with Ni doping in the dilute magnetic Semiconductor ZnO Crystalline Nanorods
Authors:
Amit Kumar Rana,
Aneesh. J,
Yogendra Kumar,
Arjunan. M. S,
K. V. Adarsh,
Somaditya Sen,
Parasharam M. Shirage
Abstract:
In this letter, we have investigated the third-order optical nonlinearities of high-quality Ni doped ZnO nanorods crystallized in wurtzite lattice, prepared by the wet chemical method. In our experiments, we found that the two photon absorption coefficient beta increases by as much as 14 times i.e. 7.6 err 0.4 to 112 err 6 cm per GW, when the Ni doping is increased from 0 to 10 percent. The substa…
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In this letter, we have investigated the third-order optical nonlinearities of high-quality Ni doped ZnO nanorods crystallized in wurtzite lattice, prepared by the wet chemical method. In our experiments, we found that the two photon absorption coefficient beta increases by as much as 14 times i.e. 7.6 err 0.4 to 112 err 6 cm per GW, when the Ni doping is increased from 0 to 10 percent. The substantial enhancement in beta is discussed in terms of the bandgap scaling and Ni doping. Furthermore, we also show that the optical bandgap measured by UVVis and photo luminescence spectroscopic, continuously red shift with increasing Ni doping concentration. We envision that the strong nonlinear optical properties together with their dilute magnetic effects, they form an important class of materials for potential applications in magneto-optical and integrated optical chips.
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Submitted 31 August, 2017;
originally announced August 2017.
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First observation of temperature dependent lightinduced response of Ge25As10Se65 thin films
Authors:
Pritam Khan,
Rituraj Sharma,
Uday Deshpande,
K. V. Adarsh
Abstract:
Ge rich ternary chalcogenide glasses (ChG) exhibit photobleaching (PB) when illuminated with bandgap light and such an effect is originating from the combined effect of intrinsic structural changes and photo-oxidation. In a sharp contradict to these previous observations, in this letter, we demonstrate for the first time that Ge rich Ge25As10Se65 ChG thin films exhibit photodarkening (PD) at 20 K…
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Ge rich ternary chalcogenide glasses (ChG) exhibit photobleaching (PB) when illuminated with bandgap light and such an effect is originating from the combined effect of intrinsic structural changes and photo-oxidation. In a sharp contradict to these previous observations, in this letter, we demonstrate for the first time that Ge rich Ge25As10Se65 ChG thin films exhibit photodarkening (PD) at 20 K and PB at 300 and 420 K for continuous illumination of ~ 3 hours. Strikingly, the temporal evolution of PD/PB show distinct characteristics at the temperatures of illumination and provide valuable information on the light induced structural changes. Further, structure specific far infrared (FIR) absorption measurements give direct evidence of different structural units involved in PD/PB at the contrasting temperatures. By comparing the lightinduced effects in vacuum and air, we conclude that intrinsic structural changes dominate over photo-oxidation in the observed PB in Ge25As10Se65 ChG thin films.
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Submitted 24 September, 2015;
originally announced September 2015.
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Investigation of Temperature Dependent Optical Modes in GexAs35-xSe65 Thin Films: Structure Specific Raman, FIR and Optical Absorption Spectroscopy
Authors:
Pritam Khan,
Arinjoy Bhattacharya,
Abin Joshy,
Vasant Sathe,
Uday Deshpande,
K. V. Adarsh
Abstract:
In this article, we present a comprehensive study of temperature and composition dependent Raman spectroscopy of GexAs35-xSe65 thin films to understand different structural units responsible for optical properties. Strikingly, our experimental results uncover the ratio of GeSe4/2 tetrahedral and AsSe3/2 pyramidal units in GexAs35-xSe65 thin films and their linear scaling relationship with temperat…
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In this article, we present a comprehensive study of temperature and composition dependent Raman spectroscopy of GexAs35-xSe65 thin films to understand different structural units responsible for optical properties. Strikingly, our experimental results uncover the ratio of GeSe4/2 tetrahedral and AsSe3/2 pyramidal units in GexAs35-xSe65 thin films and their linear scaling relationship with temperature and x. An important notable outcome of our study is the formation of Se8 rings at lower temperatures. Our experimental results further provide interesting optical features, thermally and compositionally tunable optical absorption spectra. Detailed structure specific FIR data at room temperature also present direct information on the structural units in consistent with Raman data. We foresee that our studies are useful in determining the lightinduced response of these films and also for their potential applications in optics and optoelectronics.
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Submitted 27 March, 2015;
originally announced March 2015.
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Tailoring between network rigidity and nanosecond transient absorption in a-GexAs35-xSe65 thin films
Authors:
Pritam Khan,
Tarun Saxena,
K. V. Adarsh
Abstract:
In this letter, we report the first observation of dramatic decrease in nanosecond (ns) pulsed laser induced transient absorption (TA) in a-GexAs35-xSe65 thin films by tuning the amorphous network from floppy to rigid. Our results provide the direct experimental evidence of a self trapped exciton mechanism, where trapping of the excitons occurs through bond rearrangements. Taken together, a rigid…
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In this letter, we report the first observation of dramatic decrease in nanosecond (ns) pulsed laser induced transient absorption (TA) in a-GexAs35-xSe65 thin films by tuning the amorphous network from floppy to rigid. Our results provide the direct experimental evidence of a self trapped exciton mechanism, where trapping of the excitons occurs through bond rearrangements. Taken together, a rigid amorphous network with more constraints than degrees of freedom, are unable to undergo any such bond rearrangements and results in weaker TA. However, we also demonstrate that excitation fluence can be effectively utilized as a simple tool to lift up enough constraints to introduce large TA even in rigid networks. Apart from this, we also show that TA is tunable with network rigidity as it blueshift when the mean coordination is increased from 2.35 to 2.6.
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Submitted 24 September, 2015; v1 submitted 18 September, 2014;
originally announced September 2014.
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Nanosecond light induced, thermally tunable transient dual absorption bands in a-Ge5As30Se65 thin film
Authors:
Pritam Khan,
Tarun Saxena,
K. V. Adarsh
Abstract:
In this article, we report the first observation of nanosecond laser induced transient dual absorption bands, one in the bandgap (TA1) and another in the sub-bandgap (TA2) regions of a-Ge5As30Se65 thin films. Strikingly, these bands are thermally tunable and exhibit a unique contrasting characteristic: the magnitude of TA1 decreases while that of TA2 increases with increasing temperature. Further,…
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In this article, we report the first observation of nanosecond laser induced transient dual absorption bands, one in the bandgap (TA1) and another in the sub-bandgap (TA2) regions of a-Ge5As30Se65 thin films. Strikingly, these bands are thermally tunable and exhibit a unique contrasting characteristic: the magnitude of TA1 decreases while that of TA2 increases with increasing temperature. Further, the decay kinetics of these bands is strongly influenced by the temperature, which signifies a strong temperature-dependent exciton recombination mechanism. The induced absorption shows quadratic and the decay time constant shows linear dependence on the laser beam fluence.
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Submitted 24 September, 2015; v1 submitted 5 May, 2014;
originally announced May 2014.
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Coexistence of fast photodarkening and slow photobleaching in Ge19As21Se60 thin films
Authors:
Pritam Khan,
A. R. Barik,
E. M. Vinod,
K. S. Sangunni,
H. Jain,
K. V. Adarsh
Abstract:
We experimentally demonstrate the coexistence of two opposite photo-effects, viz. fast photodarkening (PD) and slow photobleaching (PB) in Ge19As21Se60 thin films, when illuminated with a laser of wavelength 671nm, PD appears to begin instantaneously upon light illumination and saturates in tens of seconds. By comparison, PB is a slower process that starts only after PD has saturated. Although we…
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We experimentally demonstrate the coexistence of two opposite photo-effects, viz. fast photodarkening (PD) and slow photobleaching (PB) in Ge19As21Se60 thin films, when illuminated with a laser of wavelength 671nm, PD appears to begin instantaneously upon light illumination and saturates in tens of seconds. By comparison, PB is a slower process that starts only after PD has saturated. Although we could observe the coexistence of PD/PB even at moderate, one order of magnitude lower intensity of 0.2 W/cm2, the kinetics of transformation is significantly slowed down. However, both PD and PB follow stretched exponetial dependence on time. Modeling of overall change as a linear sum of two contributions suggests that the changes in As and Ge parts of glass network respond to light indepndent of each other.
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Submitted 25 March, 2014;
originally announced March 2014.
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Role of Ge:As ratio in controlling the light-induced response of a-GexAs35-xSe65 thin films
Authors:
Pritam Khan,
H. Jain,
K. V. Adarsh
Abstract:
In this paper, we present interesting results on the quantification of photodarkening (PD), photobleaching (PB) and transient PD (TPD) in a- GexAs35-xSe65 thin films as a function of network rigidity. Composition dependent light-induced responses of these samples indicate that there exist two parallel competing mechanisms of instantaneous PD arising from the As part of the network, and PB arising…
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In this paper, we present interesting results on the quantification of photodarkening (PD), photobleaching (PB) and transient PD (TPD) in a- GexAs35-xSe65 thin films as a function of network rigidity. Composition dependent light-induced responses of these samples indicate that there exist two parallel competing mechanisms of instantaneous PD arising from the As part of the network, and PB arising from the Ge part of the network. Raman spectra of the as-prepared and illuminated samples provide first direct evidence of the light-induced structural changes: an increase in AsSe3/2 pyramidal and GeSe4/2 corner-sharing tetrahedra units together with new Ge-O bond formation and decrease in energetically unstable edge sharing GeSe4/2 tetrahedra. Importantly, for a fixed Se concentration, Ge:As ratio plays the critical role in controlling the net light-induced response rather than the much believed rigidity of the glassy network.
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Submitted 22 March, 2014;
originally announced March 2014.
