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Investigation of Angle dependent SdH oscillations in Topological Insulator Bismuth
Authors:
N. K. Karn,
Yogesh Kumar,
Geet Awana,
V. P. S. Awana
Abstract:
The current article investigated the band structure in the presence and absence of spin-orbit coupling (SOC), examined the Z2 invariants, and investigated the detailed angle-dependent magneto-transport of up to 10 T (Tesla) and down to 2 K for the Bismuth crystal. The out-of-plane field-dependent magnetoresistance (MR) is positive and is huge to the order of ~104% at 2 K and 10 T. On the other han…
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The current article investigated the band structure in the presence and absence of spin-orbit coupling (SOC), examined the Z2 invariants, and investigated the detailed angle-dependent magneto-transport of up to 10 T (Tesla) and down to 2 K for the Bismuth crystal. The out-of-plane field-dependent magnetoresistance (MR) is positive and is huge to the order of ~104% at 2 K and 10 T. On the other hand, the longitudinal (in-plane) field-dependent MR is relatively small and is negative. The thermal activation energy is also estimated by using the Boltzmann formula from resistivity vs temperature measurement under applied transverse magnetic fields. The topological nature of Bi is confirmed by Z2 invariant calculation using Density functional theory. PBESol bands show trivial but Hybrid functional (HSE) bands show non-trivial topology being present in Bismuth. This article comprehensively studies the dependence of MR oscillations upon the angle between the applied field and the current. The observed oscillations fade away as the angle is increased. This article is an extension of our previous work on Bismuth [1], in which we conducted a comprehensive analysis of its structural and micro-structural properties along with its transport behavior in an applied transverse magnetic field.
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Submitted 9 July, 2024;
originally announced July 2024.
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Superconductivity at 9 K in Pb-Bi Alloy
Authors:
N. K. Karn,
Kapil Kumar,
Naveen Kumar,
Yogesh Kumar,
M. M. Sharma,
Jin Hu,
V. P. S. Awana
Abstract:
In the present work, we report the synthesis of Pb-Bi alloy with enhanced Tc of up to 9K, which is higher than that of Pb. The alloy is synthesized via a solid-state reaction route in the vacuum-encapsulated quartz tube at 7000C in an automated furnace. The synthesized sample is characterized by X-ray Diffraction(XRD) and Energy dispersive X-ray analysis(EDAX) for its phase purity and elemental co…
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In the present work, we report the synthesis of Pb-Bi alloy with enhanced Tc of up to 9K, which is higher than that of Pb. The alloy is synthesized via a solid-state reaction route in the vacuum-encapsulated quartz tube at 7000C in an automated furnace. The synthesized sample is characterized by X-ray Diffraction(XRD) and Energy dispersive X-ray analysis(EDAX) for its phase purity and elemental composition. Rietveld refinement of XRD reveals that the end product is a majority hexagonal Pb7Bi3, with minor rhombohedral Bi. The electronic transport measurement shows metallic behavior with the Debye temperature of 108K and a superconductivity transition temperature (Tc) below 9K, which is the maximum to date for any reported Pb-Bi alloy, Pb or Bi at ambient pressure. Partial substitution of Bi at the Pb site may modify the free density of electronic states within the BCS model to attain the optimum Tc, which is higher by around 2K from the reported Tc of Pb. The superconductor phase diagram derived from magneto-transport measurements reveals that the synthesized alloy is a conventional superconductor with an upper critical field (Hc2) of 3.9 Tesla, which lies well within the Pauli paramagnetic limit. The magnetization measurements carried out following ZFC(Zero Field Cool) protocols infer that the synthesized alloy is a bulk superconductor below 9K. The isothermal M-H(Magnetization vs. Field) measurements performed below Tc establish it as a type-II superconductor. The specific heat capacity measurements show that the Pb-Bi alloy is a strongly coupled bulk superconductor below around 9K with possibly two superconducting gaps.
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Submitted 1 July, 2024; v1 submitted 23 April, 2024;
originally announced April 2024.
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Weak Anti-Localization Effect in Topological Ni$_3$In$_2$S$_2$ Single Crystal
Authors:
Kapil Kumar,
Yogesh Kumar,
V. P. S. Awana
Abstract:
Ni$_3$In$_2$S$_2$ is the most recent entrant into the family of topological insulator (TI) materials, the same exhibits very high MR in a low-temperature regime. Here, we report the crystal growth, the structural, micro-structural, and magneto-transport study of Ni$_3$In$_2$S$_2$ down to 2.5K under an applied field of up to 14Tesla. The phase purity and growth direction of a single crystal is stud…
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Ni$_3$In$_2$S$_2$ is the most recent entrant into the family of topological insulator (TI) materials, the same exhibits very high MR in a low-temperature regime. Here, we report the crystal growth, the structural, micro-structural, and magneto-transport study of Ni$_3$In$_2$S$_2$ down to 2.5K under an applied field of up to 14Tesla. The phase purity and growth direction of a single crystal is studied by performing XRD on both powder and flake and further Rietveld analysis is also carried out. The electrical transport measurements are studied and the grown crystal showed metallic behaviour down to 2.5K, with an R300K/R2K ratio of around 7. A significant variation in magnetoresistance (MR) values is observed as the temperature is increased from 2.5K to 200K under an applied field of up to 14 Tesla. Interestingly the low T (2.5K), MR shows a clear V-type characteristic TI cusp. Magnetoconductivity data at low fields (1Tesla) is fitted with the Hikami Larkin Nagaoka (HLN) model, which showed the presence of a weak anti-localization effect in the synthesized Ni$_3$In$_2$S$_2$ crystal at low temperatures. We have successfully grown near single-phase Ni$_3$In$_2$S$_2$ and its TI behavior is demonstrated by magneto-transport measurements.
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Submitted 5 December, 2023;
originally announced December 2023.
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Spin wave behavior of a novel hopfion-like chiral state in Co/Pt nanodiscs
Authors:
Nimisha Arora,
Yogesh Kumar,
Pintu Das
Abstract:
This work discusses the rich phase diagram of non-trivial chiral spin textures in confined ferromagnetic/heavy-metal (FM/HM) bilayer nanomagnets of circular cross-section. These spin textures are realized as a minimum-energy ground state during an external bias field sweep for a range of nanomagnet's diameter (d). Our study, based on micromagnetic simulations, has revealed a novel Hopfion-like sta…
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This work discusses the rich phase diagram of non-trivial chiral spin textures in confined ferromagnetic/heavy-metal (FM/HM) bilayer nanomagnets of circular cross-section. These spin textures are realized as a minimum-energy ground state during an external bias field sweep for a range of nanomagnet's diameter (d). Our study, based on micromagnetic simulations, has revealed a novel Hopfion-like state which can be stabilized for a wide range of diameters and external magnetic fields. We explored the dynamical characteristics of this novel Hopfion-like state under a transient magnetic field applied along the plane's perpendicular direction. Simulation results have demonstrated the excitation of nonreciprocal spin wave (SW) modes for this novel chiral state, in contrast to other stabilized chiral states. These modes are characterized as breathing and quantized radial modes, which also exhibit hybridization with azimuthal modes. The resonant SW modes have been used to demonstrate the switching from a Hopfion-like state to a skyrmion within a few nanoseconds of SW excitation. Furthermore, we establish a correlation between the behavior of excited SW modes as a function of external magnetic field strength and underlying chiral spin texture states.
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Submitted 26 October, 2023;
originally announced October 2023.
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Emerging interfacial magnetization in isovalent manganite heterostructures driven by octahedral coupling
Authors:
Yogesh Kumar,
Harsh Bhatt,
S. Kakkar,
C. J. Kinane,
A. Caruana,
S. Langridge,
Chandan Bera,
S. Basu,
Manuel A. Roldan,
Surendra Singh
Abstract:
The distortion of corner-sharing octahedra in isovalent perovskite transition-metal oxide interfaces is proven to be an excellent way to tailor the electronic and magnetic properties of their heterostructures. Combining depth-dependent magnetic characterization technique; (polarized neutron reflectivity, PNR); and theoretical calculation (density functional theory), we report interface-driven magn…
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The distortion of corner-sharing octahedra in isovalent perovskite transition-metal oxide interfaces is proven to be an excellent way to tailor the electronic and magnetic properties of their heterostructures. Combining depth-dependent magnetic characterization technique; (polarized neutron reflectivity, PNR); and theoretical calculation (density functional theory), we report interface-driven magnetic exchange interactions due to a modification in the octahedral rotations at the interfaces in an isovalent La0.67Ca0.33MnO3 (LCMO)/La0.67Sr0.33MnO3 (LSMO) heterostructures. PNR results determined a length scale of ~ 8 unit cells at the interface, which demonstrated a modification in magnetic properties. The results also predicted a low-temperature exchange bias for these ferromagnetic heterostructures with a maximum exchange bias for the heterostructure, which showed an enhanced antiferromagnetic coupling at the interfaces.
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Submitted 13 October, 2023;
originally announced October 2023.
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Absence of superconductivity in LK-99 at ambient conditions
Authors:
Kapil Kumar,
N. K. Karn,
Yogesh Kumar,
V. P. S. Awana
Abstract:
The report of synthesis of modified Lead apatite (LK-99) with evidence of superconductivity at more than boiling water temperature has steered the whole scientific community. There have been several failures to reproduce superconductivity in LK-99 including partial successes. Here, we have continued our efforts to synthesize phase pure LK-99 with improved precursors. The process has been followed…
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The report of synthesis of modified Lead apatite (LK-99) with evidence of superconductivity at more than boiling water temperature has steered the whole scientific community. There have been several failures to reproduce superconductivity in LK-99 including partial successes. Here, we have continued our efforts to synthesize phase pure LK-99 with improved precursors. The process has been followed as suggested by Sukbae Lee et. al., [1,2]. The phase purity of each precursor is evidenced by Powder X-ray diffraction (PXRD) and well fitted by Rietveld refinement. The PXRD confirms the synthesis of phase pure polycrystalline LK-99 with apatite structure. The freshly synthesized sample does not show any signature of superconductivity levitation on a magnet (diamagnetism). The magnetization measurements on SQUID also show that LK-99 is diamagnetic at 280 K, there is no sign of superconductivity in LK-99 at room temperature. Moreover, we have also performed first principle calculations to investigate the electronic band structure of the LK-99 near Fermi level. Our study verifies that the Cu doped lead apatite (LK-99) has bands crossing at Fermi level, indicating generation of strong correlation in the system.
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Submitted 9 August, 2023; v1 submitted 7 August, 2023;
originally announced August 2023.
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Influence of swift heavy ion irradiation on structure and morphology of La0.25Pr0.375Ca0.375MnO3 perovskite film
Authors:
Harsh Bhatt,
Yogesh Kumar,
R. B. Tokas,
A. P. Singh,
Fouran Singh,
Surendra Singh
Abstract:
The effects of Ag15+ (120 MeV) swift heavy ion irradiation on the structural and morphological properties of epitaxial La0.25Pr0.375Ca0.375MnO3 (LPCMO) thin films was investigated by x-ray scattering and atomic force microscopy (AFM) techniques. LPCMO films of thickness ~ 280 Å were irradiated with an Ag15+ ion beam at different fluences of 1E11, 5E11, and 1E12 ions/cm2. XRD results suggested the…
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The effects of Ag15+ (120 MeV) swift heavy ion irradiation on the structural and morphological properties of epitaxial La0.25Pr0.375Ca0.375MnO3 (LPCMO) thin films was investigated by x-ray scattering and atomic force microscopy (AFM) techniques. LPCMO films of thickness ~ 280 Å were irradiated with an Ag15+ ion beam at different fluences of 1E11, 5E11, and 1E12 ions/cm2. XRD results suggested the development of the tensile stress along the out-of-plane direction of the LPCMO film upon ion irradiation which increased on increasing the ion fluence. The morphology of the film also modified with the irradiation and an increase in the fluence of the ion beam enhanced the in-plane height-height correlation length scale (grain size) with a loss of the fractal behaviour.
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Submitted 5 June, 2023;
originally announced June 2023.
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Shubnikov de Haas (SdH) Oscillation in Self-Flux Grown Rhombohedral Single Crystalline Bismuth
Authors:
Yogesh Kumar,
Prince Sharma,
N. K. Karn,
V. P. S. Awana
Abstract:
The historic de Haas van Alphen effect observed in the late 1950s in CSIR-NPL by J.S. Dhillon and D. Shoenberg in pure bismuth and zinc metal is revisited in this article hrough a single crystalline phase of bismuth crystal, which is observed in terms of resistivity as predicted by Shubnikov de Haas oscillations. The occurrence of oscillations in the transverse magnetic field confirms the presence…
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The historic de Haas van Alphen effect observed in the late 1950s in CSIR-NPL by J.S. Dhillon and D. Shoenberg in pure bismuth and zinc metal is revisited in this article hrough a single crystalline phase of bismuth crystal, which is observed in terms of resistivity as predicted by Shubnikov de Haas oscillations. The occurrence of oscillations in the transverse magnetic field confirms the presence of the Fermi surface. The single crystal of bismuth is grown through solid-state reaction under an optimized heat treatment whose purity and structural phase are confirmed through XRD, SEM, and EDAX.
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Submitted 13 September, 2022;
originally announced September 2022.
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Investigation of structural and magneto-transport properties of PdTe2 single crystals
Authors:
Yogesh Kumar,
Prince Sharma,
M. M. Sharma,
V. P. S. Awana
Abstract:
The growth and structural analysis of topological semimetal (TSM) PdTe2 were carried out in this study. The self-flux method was employed to grow the single crystals which were structurally characterized by XRD, SEM and EDAX, while the vibrational modes were observed by Raman spectroscopy. Further, the transport properties of the grown crystal are also investigated, which show the presence of the…
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The growth and structural analysis of topological semimetal (TSM) PdTe2 were carried out in this study. The self-flux method was employed to grow the single crystals which were structurally characterized by XRD, SEM and EDAX, while the vibrational modes were observed by Raman spectroscopy. Further, the transport properties of the grown crystal are also investigated, which show the presence of the weak anti-localization effect. The low field (1Tesla) magnetoconductivity is studied by Hikami-Larkin-Nagaoka (HLN) model, and the physical parameters are extracted. Further, a quadratic term and a linear term in applied field were added in HLN model, which are accounted for quantum and classical contributions in conduction mechanism. The modified HLN model was used to study magneto-conductivity in entire field range and at temperature from 2-100 K. This study not only confirmed the growth of single crystal PdTe2, but also verified the presence of topological surface states (TSS) through the HLN analysis of magneto-transport measurements.
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Submitted 8 September, 2022;
originally announced September 2022.
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Thickness-Dependent Magneto Transport of Bi2Se3/SiO2 Topological Insulator thin films
Authors:
Yogesh Kumar,
Prince Sharma,
V. P. S. Awana
Abstract:
Topological insulators are immensely investigated for their surface states related properties as these materials can be used for various spintronics, quantum computing, and optoelectronics applications. In this perspective, different thicknesses of bismuth selenide thin films are deposited on the 250 nm SiO2 substrate with the help of thermal deposition. The motive of this study is to investigate…
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Topological insulators are immensely investigated for their surface states related properties as these materials can be used for various spintronics, quantum computing, and optoelectronics applications. In this perspective, different thicknesses of bismuth selenide thin films are deposited on the 250 nm SiO2 substrate with the help of thermal deposition. The motive of this study is to investigate the surface and bulk-related behaviour with different thicknesses. The deposited films are characterized through GI-XRD (grazing incidence X-ray diffractometer) and Raman spectroscopy, which ensure the impurity less deposition. Further, the transport properties are investigated, which shows thickness dependence of weak anti-localization effect (WAL) in the system and proposed these Bi2Se3/SiO2 thin films as a topological Anderson insulator (TAI).
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Submitted 4 July, 2022;
originally announced July 2022.
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Surface states induced weak anti-localization effect in Bi0.85Sb0.15 topological single crystal
Authors:
Yogesh Kumar,
VPS Awana
Abstract:
We report, an experimental evidence of surface states (SS) driven magneto-transport in a Bi0.85Sb0.15 single crystal. Detailed high field (up to 12T) and low temperature (down to 2K) magneto-transport measurements are been carried out on the studied Bi0.85Sb0.15 single crystal. The phase, composition and Raman modes are studied through X-ray diffraction, Energy dispersive X-ray, and Raman spectros…
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We report, an experimental evidence of surface states (SS) driven magneto-transport in a Bi0.85Sb0.15 single crystal. Detailed high field (up to 12T) and low temperature (down to 2K) magneto-transport measurements are been carried out on the studied Bi0.85Sb0.15 single crystal. The phase, composition and Raman modes are studied through X-ray diffraction, Energy dispersive X-ray, and Raman spectroscopy. The obtained crystal shows non-saturating magnetoresistance (4250%) at 2K and 12T, along with the existence of weak-anti localization (WAL) effect at around zero magnetic field. Further, the Hikami-Larkin-Nagaoka (HLN) analysis is performed to analyse the WAL effect. The prefactor and phase coherence length are deduced at various temperatures, which signified the presence of more than one conduction channel in the studied Bi0.85Sb0.15 single crystal. The effect of quantum scattering, bulk contribution from underneath the surface states and defects are been studied by adding various field dependent quadratic, linear and constant terms to the SS driven HLN equation. Various possible scattering mechanism are studied by analysing the temperature dependence of the phase coherence length. Angle dependent magneto-conductivity of the studied Bi0.85Sb0.15 single crystal clearly confirmed the surface states dominated transport in present crystal.
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Submitted 4 May, 2022; v1 submitted 4 May, 2022;
originally announced May 2022.
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Effect of magnetic (Nd) doping on electrical and magnetic properties of topological Sb2Te3 single crystal
Authors:
Kapil Kumar,
Yogesh Kumar,
M. Singh,
S. Patnaik,
I. Felner,
V. P. S. Awana
Abstract:
Here, we report the growth and characterization of single crystals of NdxSb2-xTe3, by solid state reaction route via self-flux method. The phase and layered growth are confirmed through x-ray diffraction and Scanning electron microscopy respectively. A slight contraction in lattice parameters is seen after Nd doping. Also a minute shift in vibrational modes of recorded Raman spectra has been obser…
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Here, we report the growth and characterization of single crystals of NdxSb2-xTe3, by solid state reaction route via self-flux method. The phase and layered growth are confirmed through x-ray diffraction and Scanning electron microscopy respectively. A slight contraction in lattice parameters is seen after Nd doping. Also a minute shift in vibrational modes of recorded Raman spectra has been observed by doping of Nd in Sb2Te3. The magneto-resistance values under magnetic field of 5Tesla for Sb2Te3 are 75 percent at 2.5K and 60 percent at 20K, but only 40 percent at 5K for Nd0.1Sb1.9Te3. DC magnetic measurements exhibit expected diamagnetic and paramagnetic behaviors for pure and Nd doped crystals respectively. A cusp-like behavior is observed in magneto conductivity of both pure and Nd doped crystals at low magnetic fields below 1 Tesla which is analyzed using Hikami Larkin Nagaoka (HLN) model. For Sb2Te3 the fitted parameters alpha values are -1.02 and -0.58 and the phase coherence lengths are 50.8(6)nm & 34.9(8)nm at temperatures 2.5K and 20K respectively. For Nd0.1Sb1.9Te3, alpha is -0.29 and coherence length is 27.2(1) nm at 5K. The α values clearly show the presence of weak anti localization effect in both, pure and Nd doped samples. Also with Nd doping, the contribution of bulk states increases in addition to conducting surface states in overall conduction mechanism.
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Submitted 26 July, 2021;
originally announced July 2021.
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Structural and WAL analysis of Topological single-crystal SnSb2Te4
Authors:
Ankush Saxena,
M. M. Sharma,
Prince Sharma,
Yogesh Kumar,
Poonam Rani,
M. Singh,
S. Patnaik,
V. P. S. Awana
Abstract:
Here, we report successful single crystal growth of SnSb2Te4 using the self-flux method. Unidirectional crystal growth is confirmed through X Ray Diffraction (XRD) pattern taken on mechanically cleaved crystal flake while the rietveld refined Powder XRD (PXRD) pattern confirms the phase purity of the grown crystal. Scanning Electron Microscopy (SEM) image and Energy Dispersive X-Ray analysis (EDAX…
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Here, we report successful single crystal growth of SnSb2Te4 using the self-flux method. Unidirectional crystal growth is confirmed through X Ray Diffraction (XRD) pattern taken on mechanically cleaved crystal flake while the rietveld refined Powder XRD (PXRD) pattern confirms the phase purity of the grown crystal. Scanning Electron Microscopy (SEM) image and Energy Dispersive X-Ray analysis (EDAX) confirm crystalline morphology and exact stoichiometry of constituent elements. Vibrational Modes observed in Raman spectra also confirm the formation of the SnSb2Te4 phase. DC resistivity measurements confirm the metallic character of the grown crystal. Magneto-transport measurements up to 5T show a nonsaturating low magneto-resistance percentage. V type cusp and Hikami Larkin Nagaoka (HLN) fitting at lower field confirms the Weak Anti-localization (WAL) effect in SnSb2Te4. Density Functional Theory (DFT) calculations were showing topological non-trivial electronic band structure. It is the first-ever report on MR study and WAL analysis of SnSb2Te4 single crystal.
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Submitted 7 July, 2021;
originally announced July 2021.
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Probing the Topological Surface States through Magnetoresistance and Ultrafast Charge Carrier Dynamics in (Bi/Sb)2Te3
Authors:
Prince Sharma,
Yogesh Kumar,
V. P. S. Awana,
Mahesh Kumar
Abstract:
Topological insulators with their topological protected surface states are highly promising quantum materials. In this article the micro-flakes of single-crystalline topological insulators Bi2Te3 and Sb2Te3 are explored through physical parameter measurement at low temperatures and thereby the charge carrier dynamics are investigated at 5K to study the various optical transitions related to these…
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Topological insulators with their topological protected surface states are highly promising quantum materials. In this article the micro-flakes of single-crystalline topological insulators Bi2Te3 and Sb2Te3 are explored through physical parameter measurement at low temperatures and thereby the charge carrier dynamics are investigated at 5K to study the various optical transitions related to these surface states. The magnetoresistance is experimentally investigated at temperatures of 5K and 100K for a field range of 1Tesla. The occurrence of the weak anti-localization effect predicts the presence of topologically protected surface states in the systems. Further, the ultrafast femtosecond transient reflectance spectroscopy is performed at different temperatures, varying from a room temperature (300K) to a low temperature of 5K, to find the TSS related transitions at low temperatures.
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Submitted 22 June, 2021;
originally announced June 2021.
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Optical Damage Threshold and THz Generation Efficiency of (Fe,CoFeB)/(Ta,Pt) Spintronic Emitters
Authors:
Sandeep Kumar,
Anand Nivedan,
Arvind Singh,
Yogesh Kumar,
Purnima Malhotra,
Marc Tondusson,
Eric Freysz,
Sunil Kumar
Abstract:
THz pulses are generated from femtosecond pulse-excited ferromagnetic/nonmagnetic spintronic heterostructures via inverse spin Hall effect. The contribution from ultrafast demagnetization/remagnetization is extremely weak, in the comparison. The highest possible THz signal strength from spintronic THz emitters is limited by the optical damage threshold of the corresponding heterostructures. The TH…
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THz pulses are generated from femtosecond pulse-excited ferromagnetic/nonmagnetic spintronic heterostructures via inverse spin Hall effect. The contribution from ultrafast demagnetization/remagnetization is extremely weak, in the comparison. The highest possible THz signal strength from spintronic THz emitters is limited by the optical damage threshold of the corresponding heterostructures. The THz generation efficiency does not saturate with the excitation fluence even up till the damage threshold. Bilayer (Fe, CoFeB)/(Pt, Ta) based FM/NM spintronic heterostructures have been studied for an optimized performance for THz generation when pumped by sub-50 fs amplified laser pulses at 800 nm. Among them, CoFeB/Pt is the best combination for an efficient THz source. The optimized FM/NM spintronic heterostructure on a quartz substrate, having alpha-phase Ta as the nonmagnetic layer, show the highest damage threshold as compared to those with Pt, irrespective of their generation efficiency. The damage threshold of the Fe/Ta heterostructure on quartz substrate is ~85 GW/cm2.
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Submitted 5 April, 2021;
originally announced April 2021.
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Modeling of Magneto-Conductivity of Bismuth Selenide -- A Topological Insulator
Authors:
Yogesh Kumar,
Rabia Sultana,
Prince Sharma,
V. P. S. Awana
Abstract:
We report the magneto-conductivity analysis of Bi2Se3 single crystal at different temperatures in a magnetic field range of 14Tesla. The single crystals are grown by the self-flux method and characterized through X-ray diffraction, Scanning Electron Microscopy, and Raman Spectroscopy. The single crystals show magnetoresistance (MR) of around 380 percent at a magnetic field of 14T and a temperature…
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We report the magneto-conductivity analysis of Bi2Se3 single crystal at different temperatures in a magnetic field range of 14Tesla. The single crystals are grown by the self-flux method and characterized through X-ray diffraction, Scanning Electron Microscopy, and Raman Spectroscopy. The single crystals show magnetoresistance (MR) of around 380 percent at a magnetic field of 14T and a temperature of 5K. The Hikami Larkin Nagaoka (HLN) equation has been used to fit the magneto-conductivity (MC) data. However, the HLN fitted curve deviates at higher magnetic fields above 1 Tesla, suggesting that the role of surface driven conductivity suppresses with an increasing magnetic field. This article proposes a speculative model comprising of surface-driven HLN and added quantum diffusive and bulk carriers driven classical terms. The model successfully explains the MC of the Bi2Se3 single crystal at various temperatures (5 to 200K) and applied magnetic fields (up to 14Tesla).
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Submitted 18 February, 2021;
originally announced February 2021.
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Comprehensive Analysis for the High Field Magneto-conductivity of Bi2Te3 Single Crystal
Authors:
Yogesh Kumar,
Rabia Sultana,
V. P. S. Awana
Abstract:
Here, we report the magneto-conductivity (up to 14Tesla and down to 5K) analysis of Bi2Te3 single-crystal. A sharp magneto-conductivity (MC) rise (inverted v-type cusp) is observed near H=0 due to the weak antilocalization (WAL) effect, while a linear curve is observed at higher fields. We account for magneto-conductivity (MC) over the entire range of applied magnetic fields of up to 14Tesla and t…
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Here, we report the magneto-conductivity (up to 14Tesla and down to 5K) analysis of Bi2Te3 single-crystal. A sharp magneto-conductivity (MC) rise (inverted v-type cusp) is observed near H=0 due to the weak antilocalization (WAL) effect, while a linear curve is observed at higher fields. We account for magneto-conductivity (MC) over the entire range of applied magnetic fields of up to 14Tesla and temperatures from 100K to 5K in a modified HLN modelling (addition of quadratic (BH2) through quantum and classical components involvement. The additional term BH2 reveals a gradual change of a (HLN parameter) from -0.421(6) to -0.216(1) as the temperature increases from 5 to 100K. The phase coherence length Lphi obtained from both conventional and modified modelling decreased with increasing temperature but remains more protracted than the mean free path (L) of electrons. It shows the quantum phase coherence effect dominates at high temperature.
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Submitted 18 December, 2020;
originally announced December 2020.
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High Field Magneto-Transport of Mixed Topological Insulators Bi2Se3-xTex (x = 0, 1, 2 & 3)
Authors:
Deepak Sharma,
Yogesh Kumar,
P. Kumar,
Vipin Nagpal,
S. Patnaik,
V. P. S. Awana
Abstract:
The article comprises structural, microstructural, and physical properties analysis of Bi2Se3-xTex (x= 0, 1, 2 and 3) mixed topological insulator (MTI) single crystals. All the crystals were grown through a well-optimized solid-state reaction route via the self-flux method. These MTI are well characterized through XRD (X-ray Diffraction), SEM (Scanning Electron Microscopy), EDAX (Energy Dispersive…
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The article comprises structural, microstructural, and physical properties analysis of Bi2Se3-xTex (x= 0, 1, 2 and 3) mixed topological insulator (MTI) single crystals. All the crystals were grown through a well-optimized solid-state reaction route via the self-flux method. These MTI are well characterized through XRD (X-ray Diffraction), SEM (Scanning Electron Microscopy), EDAX (Energy Dispersive spectroscopy), and thereby, the physical properties are analyzed through the RT (Resistance vs temperature) down to 10K as well as the magneto-resistance (MR) measurements (at 5K) in a magnetic field of up to 10 Tesla. The MR drastically varies from x=0 to x=3 in MTI, from a huge 400 percent, it goes down to 20 percent and 5 percent and eventually back to 315 percent. This fascinated behaviour of MR is explained in this article through HLN (Hikami-Larkin-Nagaoka) equation and an additional term. This article not only proposed the mesmerizing behavior of MR in MTI but also explains the reason through competing WAL (Weak Anti-Localization) and WL (Weak Localization) conduction processes.
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Submitted 16 September, 2020;
originally announced September 2020.
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Annealing driven positive and negative exchange bias in Fe-Cu-Pt heterostructures at room temperature
Authors:
M. A. Basha,
Harsh Bhatt,
Yogesh Kumar,
C. L. Prajapat,
M. Gupta,
V. Karki,
S. Basu,
Surendra Singh
Abstract:
We report annealing induced exchange bias in Fe-Cu-Pt based heterostructures with Cu as an intermediate layer (Fe/Cu/Pt heterostructure) and capping layer (Fe/Pt/Cu heterostructure). Exchange bias observed at room temperature (300 K) is found to be dependent on the annealing temperature. We obtained positive exchange bias of 120 Oe on annealing both the heterostructures at 400 oC, while on anneali…
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We report annealing induced exchange bias in Fe-Cu-Pt based heterostructures with Cu as an intermediate layer (Fe/Cu/Pt heterostructure) and capping layer (Fe/Pt/Cu heterostructure). Exchange bias observed at room temperature (300 K) is found to be dependent on the annealing temperature. We obtained positive exchange bias of 120 Oe on annealing both the heterostructures at 400 oC, while on annealing these heterostructures at 500 and 600 oC a negative exchange bias of ~ -100 Oe was found. X-ray reflectivity and polarized neutron reflectivity measurements provided evolution of depth dependent structure and magnetic properties of the heterostructures on annealing at different temperatures and revealed coexistence of soft and hard (alloy) magnetic phases across the thickness of the films. Rapid and long range interdiffusion at interfaces on annealing the systems at a temperature above 400 oC resulted into formation of a ternary alloy phase. These results can be understood within the context of a very unusual interface exchange interaction at the interface of hard/soft magnetic phases, which are dependent on the annealing temperature.
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Submitted 25 April, 2019;
originally announced April 2019.
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Antisymmetric magnetoresistance and helical magnetic structure in compensated Gd/Co multilayer
Authors:
Surendra Singh,
M. A. Basha,
C. L. Prajapat,
Harsh Bhatt,
Yogesh Kumar,
M. Gupta,
C. J. Kinane,
J. Cooper,
M. R. Gonal,
S. Langridge,
S. Basu
Abstract:
Using spin dependent specular and off-specular polarized neutron reflectivity (PNR), we report the observation of a twisted helical magnetic structure with planar 2π domain wall (DW) and highly correlated magnetic domains in a Gd/Co multilayer. Specular PNR with polarization analysis reveals the formation of planar 2πDWs below a compensation temperature (TComp), resulting to positive exchange bias…
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Using spin dependent specular and off-specular polarized neutron reflectivity (PNR), we report the observation of a twisted helical magnetic structure with planar 2π domain wall (DW) and highly correlated magnetic domains in a Gd/Co multilayer. Specular PNR with polarization analysis reveals the formation of planar 2πDWs below a compensation temperature (TComp), resulting to positive exchange bias in this system. Off-specular PNR with spin polarization showed development of magnetic inhomogenities (increase in magnetic roughness) for central part (thickness ~ 25-30 Å) of each Gd layer, where magnetization is aligned perpendicular (in-plane) to an applied field. These magnetic roughness are vertically correlated and results into Bragg sheet in spin flip channel of Off-specular PNR data, which is contributing towards an antisymmetric magnetoresistance at TComp in the system. The growth and tunability of highly correlated magnetic inhomogeneities (roughness) and domain structure around TComp in combination of twisted helical magnetic structure with planar 2πDWs will be key for application in all-spin-based technology.
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Submitted 25 April, 2019;
originally announced April 2019.
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Superconductivity-driven magnetization modulation in YBa2Cu3O7-δ /SrTiO3/La0.67Sr0.33MnO3 heterostructures
Authors:
Surendra Singh,
Harsh Bhatt,
Yogesh Kumar,
C. L. Prajapat,
B. Satpati,
C. J. Kinane,
S. Langridge,
G. Ravikumar,
S. Basu
Abstract:
Using spin polarized neutron reflectivity experiments, we demonstrate an unusual proximity behaviour when the superconductor (SC) and the ferromagnet (FM) are coupled through an insulator (I) in YBa2Cu3O7-δ (SC)/SrTiO3 (I)/La0.67Sr0.33MnO3 (FM) heterostructures. We have observed an unexpected magnetic modulation at the interface region of the FM below the superconducting transition temperature. Th…
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Using spin polarized neutron reflectivity experiments, we demonstrate an unusual proximity behaviour when the superconductor (SC) and the ferromagnet (FM) are coupled through an insulator (I) in YBa2Cu3O7-δ (SC)/SrTiO3 (I)/La0.67Sr0.33MnO3 (FM) heterostructures. We have observed an unexpected magnetic modulation at the interface region of the FM below the superconducting transition temperature. The magnetization of the FM layer at the I/FM interface was drastically reduced as compared to the magnetization in the rest of the FM layer. This result indicates that the Cooper pairs tunnel across the insulator and interact with the local magnetization at the interface region (extending ~ 30 Å) of the FM causing modification of the magnetization at the interface. This unexpected magnetic behavior cannot be explained on the basis of the existing theoretical models. However, the length scale associated here clearly suggests the long range proximity effect as a result of tunneling of Cooper pairs.
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Submitted 4 April, 2019;
originally announced April 2019.
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Search for Origin of Room Temperature Ferromagnetism Properties in Ni doped ZnO Nanostructure
Authors:
Amit Kumar Rana,
Yogendra Kumar,
Parasmani Rajput,
S. N. Jha,
D. Bhattacharyya,
Parasharam M. Shirage
Abstract:
The origin of room temperature (RT) ferromagnetism (FM) in Ni doped ZnO samples are systematically investigated through physical, optical, and magnetic properties of nanostructure, prepared by simple low-temperature wet chemical method. Reitveld refinement of X-ray diffraction pattern displays an increase in lattice parameters with strain relaxation and contraction in Zn/O occupancy ratio by means…
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The origin of room temperature (RT) ferromagnetism (FM) in Ni doped ZnO samples are systematically investigated through physical, optical, and magnetic properties of nanostructure, prepared by simple low-temperature wet chemical method. Reitveld refinement of X-ray diffraction pattern displays an increase in lattice parameters with strain relaxation and contraction in Zn/O occupancy ratio by means of Ni-doping. Similarly scanning electron microscope demonstrates modification in the morphology from nanorods to nanoflakes with Ni doping, suggests incorporation of Ni ions in ZnO. More interestingly, XANES (X-ray absorption near edge spectroscopy) measurements confirm that Ni is being incorporated in ZnO as Ni2+. EXAFS (Extended X-ray Absorption Fine Structure) analysis reveals that structural disorders near the Zn sites in the ZnO samples upsurges with increasing Ni concentration. Raman spectroscopy exhibits additional defect driven vibrational mode at 275 cm-1, appeared with Ni-doped sample only and the shift with broadening in 580 cm-1 peak, which manifests the presence of the oxygen vacancy (VO) related defects. Moreover, in photoluminescence (PL) spectra we observed peak appears at 524 nm, indicates the presence of singly ionized VO+, which may activate bound magnetic polarons (BMPs) in dilute magnetic semiconductors (DMSs). Magnetization measurements indicate weak ferromagnetism at RT, which rises with increasing Ni consolidation. It is therefore proposed that effect of the Ni-ions as well as the inherent exchange interactions rising from VO+ assist to produce BMPs, which are accountable for the RT-FM in Zn1-xNixO (0<x<0.125) system.
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Submitted 31 August, 2017;
originally announced August 2017.
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Growth of transparent Zn1-xSrxO films by facile wet chemical method: Effect of Sr doping on the structural, optical and sensing properties
Authors:
Amit Kumar Rana,
Rajasree Das,
Yogendra Kumar,
Somaditya Sen,
Parasharam M. Shirage
Abstract:
Sr doped ZnO nanorods thin films are prepared using wet chemical technique on transparent flexible substrate. Effect of Sr doping on structural and optical properties of ZnO is systematically investigated. The sensing property of the ZnO is enhanced by Sr doping and imitates as a promising material for future toxic and flammable gas sensor applications as well as for optoelectronic devices.
Sr doped ZnO nanorods thin films are prepared using wet chemical technique on transparent flexible substrate. Effect of Sr doping on structural and optical properties of ZnO is systematically investigated. The sensing property of the ZnO is enhanced by Sr doping and imitates as a promising material for future toxic and flammable gas sensor applications as well as for optoelectronic devices.
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Submitted 31 August, 2017;
originally announced August 2017.
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Sr- and Ni-doping in ZnO nanorods synthesized by simple wet chemical method as excellent materials for CO and CO2 gas sensing
Authors:
Parasharam M. Shirage,
Amit Kumar Rana,
Yogendra Kumar,
Somaditya Sen,
S. G. Leonardi,
G. Neri
Abstract:
In this study, the effect of Sr- and Ni-doping on microstructural, morphological and sensing properties of ZnO nanorods has been investigated. Nanorods with different Sr and Ni loadings were prepared using a simple wet chemical method and characterized by means of scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence (PL) analysis. XRD data confirmed that Sr- and Ni-dop…
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In this study, the effect of Sr- and Ni-doping on microstructural, morphological and sensing properties of ZnO nanorods has been investigated. Nanorods with different Sr and Ni loadings were prepared using a simple wet chemical method and characterized by means of scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence (PL) analysis. XRD data confirmed that Sr- and Ni-doped samples maintainsthe wurtzite hexagonal structure of pure ZnO. However, unlikes Sr, Ni doping modifies the nanorod morphology, increases the surface area (SA) and decreases the ratio of IUV/Igreen photoluminescence peak to a greater extent. Sensing tests were performed on thick films resistive planar devices for monitoring CO and CO2, as indicators of indoor air quality.The effect of the operating temperature, nature and loading of dopant on the sensibility and selectivity of the fabricated sensors towards these two harmful gases were investigated. The gas sensing characteristics of Ni- and Sr-doped ZnO based sensors showed a remarkable enhancement (i. e. the response increased and shifted towards lower temperature for both gases) compared to ZnO-based one, demonstrating that these ZnO nanostructures are promising to fabricate sensor devices for monitoring indoor air quality.
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Submitted 31 August, 2017;
originally announced August 2017.
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Synthesis of Ni doped ZnO nanostructures by low temperature wet chemical method and their enhanced field emission properties
Authors:
Amit Kumar Rana,
Prashant Bankar,
Yogendra Kumar,
Mahendra A. More,
Dattatray J. Late,
Parasharam M. Shirage
Abstract:
In this study, we report the enhancement in field emission (FE) properties of ZnO nanostructure by Ni doping at the base pressure of ~1 x 10-8 mbar, which were grown by the simple wet chemical process. ZnO nanostructure shows single crystalline wurtzite structure up to Ni 10% doping. FESEM represents change in the nanostructure morphology from thick nanoneedles to nanoflakes via thin nanorods with…
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In this study, we report the enhancement in field emission (FE) properties of ZnO nanostructure by Ni doping at the base pressure of ~1 x 10-8 mbar, which were grown by the simple wet chemical process. ZnO nanostructure shows single crystalline wurtzite structure up to Ni 10% doping. FESEM represents change in the nanostructure morphology from thick nanoneedles to nanoflakes via thin nanorods with increase in Ni doped ZnO. The turn-on field required to draw a field emission (FE) current density at 1μA/cm2 is found to be 2.5, 2.3, 1.8 and 1.7 V/μm for ZnO(Ni0%), ZnO(Ni5%), ZnO(Ni7.5%) and ZnO(Ni10%), respectively.
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Submitted 31 August, 2017;
originally announced August 2017.
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Controlling of ZnO nanostructures by solute concentrationand its effect on growth, structural and optical properties
Authors:
Yogendra Kumar,
Amit Kumar Rana,
Prateek Bhojane,
Manojit Pusty,
Vivas Bagwe,
Somaditya Sen,
Parasharam M. Shirage
Abstract:
ZnO nanostructured films were prepared by chemical bath deposition method on glass substrates without any assistance of either microwave or high pressure autoclaves. The effect of solute concentration on the pure wurtzite ZnO nanostructure morphologies is studied. The controlling of the solute concentration help to control nano-structure in the form of nano-needles, and rods.
ZnO nanostructured films were prepared by chemical bath deposition method on glass substrates without any assistance of either microwave or high pressure autoclaves. The effect of solute concentration on the pure wurtzite ZnO nanostructure morphologies is studied. The controlling of the solute concentration help to control nano-structure in the form of nano-needles, and rods.
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Submitted 31 August, 2017;
originally announced August 2017.
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Enhancement of Two photon absorption with Ni doping in the dilute magnetic Semiconductor ZnO Crystalline Nanorods
Authors:
Amit Kumar Rana,
Aneesh. J,
Yogendra Kumar,
Arjunan. M. S,
K. V. Adarsh,
Somaditya Sen,
Parasharam M. Shirage
Abstract:
In this letter, we have investigated the third-order optical nonlinearities of high-quality Ni doped ZnO nanorods crystallized in wurtzite lattice, prepared by the wet chemical method. In our experiments, we found that the two photon absorption coefficient beta increases by as much as 14 times i.e. 7.6 err 0.4 to 112 err 6 cm per GW, when the Ni doping is increased from 0 to 10 percent. The substa…
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In this letter, we have investigated the third-order optical nonlinearities of high-quality Ni doped ZnO nanorods crystallized in wurtzite lattice, prepared by the wet chemical method. In our experiments, we found that the two photon absorption coefficient beta increases by as much as 14 times i.e. 7.6 err 0.4 to 112 err 6 cm per GW, when the Ni doping is increased from 0 to 10 percent. The substantial enhancement in beta is discussed in terms of the bandgap scaling and Ni doping. Furthermore, we also show that the optical bandgap measured by UVVis and photo luminescence spectroscopic, continuously red shift with increasing Ni doping concentration. We envision that the strong nonlinear optical properties together with their dilute magnetic effects, they form an important class of materials for potential applications in magneto-optical and integrated optical chips.
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Submitted 31 August, 2017;
originally announced August 2017.
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Controlling of ZnO nanostructures morphology for guiding the structural and optical properties
Authors:
Amit Kumar Rana,
Yogendra Kumar,
Niharika Saxena,
Rajasree Das,
Somaditya Sen,
Parasharam M. Shirage
Abstract:
Most of the applications of the nano structures dependent on the morphology which affects the opto electronics properties. This research article provides a pathway of guiding optical properties like band-gap and fluorescence properties by controlled growth of nano-rods, -flowers, -needles or- tubes without external chemical doping, by simple hydro thermal method by controlling over synthesis param…
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Most of the applications of the nano structures dependent on the morphology which affects the opto electronics properties. This research article provides a pathway of guiding optical properties like band-gap and fluorescence properties by controlled growth of nano-rods, -flowers, -needles or- tubes without external chemical doping, by simple hydro thermal method by controlling over synthesis parameter, temperature.
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Submitted 31 August, 2017;
originally announced August 2017.
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Spin-filter effect at the interface of magnetic/non-magnetic homojunctions in Li doped ZnO nanostructures
Authors:
L. Botsch,
I. Lorite,
Y. Kumar,
P. Esquinazi,
T. Michalsky,
J. Zajadacz,
K. Zimmer
Abstract:
After more than a decade of extensive research on the magnetic order triggered by lattice defects in a wide range of nominally non-magnetic materials, we report its application in a spintronic device. This device is based on a spin-filter phenomenon we discovered at the interfaces between defect-induced magnetic and non-magnetic regions, produced at the surface of a Li doped ZnO microwire by low-e…
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After more than a decade of extensive research on the magnetic order triggered by lattice defects in a wide range of nominally non-magnetic materials, we report its application in a spintronic device. This device is based on a spin-filter phenomenon we discovered at the interfaces between defect-induced magnetic and non-magnetic regions, produced at the surface of a Li doped ZnO microwire by low-energy proton implantation. Positive magnetoresistance is observed at 300~K and scales with the number of interfaces introduced along the wire.
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Submitted 6 July, 2017; v1 submitted 23 May, 2017;
originally announced May 2017.
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Effect of annealing on the magnetic properties of zinc ferrite thin films
Authors:
Yogesh Kumar,
Israel Lorite,
Michael Lorenz,
Pablo D. Esquinazi,
Marius Grundmann
Abstract:
We report on the magnetic properties of zinc ferrite thin film deposited on SrTiO$_3$ single crystal using pulsed laser deposition. X-ray diffraction result indicates the highly oriented single phase growth of the film along with the presence of the strain. In comparison to the bulk antiferromagnetic order, the as-deposited film has been found to exhibit ferrimagnetic ordering with a coercive fiel…
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We report on the magnetic properties of zinc ferrite thin film deposited on SrTiO$_3$ single crystal using pulsed laser deposition. X-ray diffraction result indicates the highly oriented single phase growth of the film along with the presence of the strain. In comparison to the bulk antiferromagnetic order, the as-deposited film has been found to exhibit ferrimagnetic ordering with a coercive field of 1140~Oe at 5~K. A broad maximum, at $\approx$105~K, observed in zero-field cooled magnetization curve indicates the wide grain size distribution for the as-deposited film. Reduction in magnetization and blocking temperature has been observed after annealing in both argon as well as oxygen atmospheres, where the variation was found to be dependent on the annealing temperature.
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Submitted 20 February, 2017;
originally announced February 2017.
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Photo-enhanced magnetization in Fe-doped ZnO nanowires
Authors:
I. Lorite,
Y. Kumar,
P. Esquinazi,
S. Friedländer,
A. Pöppl,
T. Michalsky,
J. Meijer,
M. Grundmann,
T. Meyer,
I. Estrela-Lopis
Abstract:
An emerging branch of electronics, the optospintronics, would be highly boosted if the control of magnetic order by light is implemented in magnetic semiconductors nanostructures being compatible with the actual technology. Here we show that the ferromagnetic magnetization of low Fe-doped ZnO nanowires prepared by carbothermal process is enhanced under illumination up to temperatures slightly belo…
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An emerging branch of electronics, the optospintronics, would be highly boosted if the control of magnetic order by light is implemented in magnetic semiconductors nanostructures being compatible with the actual technology. Here we show that the ferromagnetic magnetization of low Fe-doped ZnO nanowires prepared by carbothermal process is enhanced under illumination up to temperatures slightly below room temperature. This enhancement is related to the existence of an oxygen vacancy V$_{\rm O}$ in the neighbouring of an antiferromagnetic superexchange Fe$^{3+}$-Fe$^{3+}$ pair. Under illumination the V$_{\rm O}$ is ionized to V$_{\rm O}^+$ giving an electron to a close Fe$^{3+}$ ion from the antiferromagnetic pair. This light excited electron transition allows the transition of Fe$^{3+}$ to Fe$^{2+}$ forming stable ferromagnetic double exchange pairs, increasing the total magnetization. The results here presented indicate an efficient way to influence the magnetic properties of ZnO based nanostructures by light illumination at high temperatures.
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Submitted 22 June, 2016;
originally announced June 2016.
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Conductivity fluctuations in proton-implanted ZnO microwires
Authors:
B. Dolgin,
I. Lorite,
Y. Kumar,
P. Esquinazi,
G. Jung,
B. Straube,
S. Perez de Heluani
Abstract:
The electric noise can be an important limitation for applications of conducting elements of size in the nanometer range. The intrinsic electrical noise of prospective materials for opto-spintronics applications like ZnO has not been characterized yet. In this study we have investigated the conductivity fluctuations in 10~nm thick current paths produced by proton implantation of ZnO microwires at…
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The electric noise can be an important limitation for applications of conducting elements of size in the nanometer range. The intrinsic electrical noise of prospective materials for opto-spintronics applications like ZnO has not been characterized yet. In this study we have investigated the conductivity fluctuations in 10~nm thick current paths produced by proton implantation of ZnO microwires at room temperature. The voltage noise under a constant dc current bias in undoped as well as in Li-doped microwires is characterized by $1/f^a$ power spectra with $a \sim 1$. The noise intensity scales with the square of the bias current pointing out to bias-independent resistivity fluctuations as a source of the observed noise. The normalized power spectral density appears inversely proportional to the number of carriers in the probed sample volume, in agreement with the phenomenological Hooge law. For the proton-implanted ZnO microwire and at 1~Hz we obtain a normalized power spectral density as low as $\sim 10^{-11}~$Hz$^{-1}$.
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Submitted 1 June, 2016;
originally announced June 2016.
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Detection of defect-induced magnetism in low-dimensional ZnO structures by Magnetophotocurrent
Authors:
Israel Lorite,
Yogesh Kumar,
Pablo Esquinazi,
Carlos Zandalazini,
Silvia Perez de Heluani
Abstract:
The detection of defect-induced magnetic order in single low-dimensional oxide structures is in general difficult because of the relatively small yield of magnetically ordered regions. In this work we have studied the effect of an external magnetic field on the transient photocurrent measured after light irradiation on different ZnO samples at room temperature. We found that a magnetic field produ…
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The detection of defect-induced magnetic order in single low-dimensional oxide structures is in general difficult because of the relatively small yield of magnetically ordered regions. In this work we have studied the effect of an external magnetic field on the transient photocurrent measured after light irradiation on different ZnO samples at room temperature. We found that a magnetic field produces a change in the relaxation rate of the transient photocurrent only in magnetically ordered ZnO samples. This rate can decrease or increase with field depending whether the magnetic order region is in the bulk or only at the surface of the ZnO sample. The phenomenon reported here is of importance for the development of magneto-optical low-dimensional oxides devices and provide a new guideline for the detection of magnetic order in low-dimensional magnetic semiconductors.
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Submitted 22 April, 2015;
originally announced April 2015.
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Dielectric Investigation, Piezoelectric Measurement and Structural Studies of Strontium-doped, modified PMS-PZT Piezoelectric Ceramics
Authors:
Kumar Brajesh,
Rajyavardhan Ray,
A. K. Himanshu,
Yashwant Kumar,
Rajeev Ranjan,
N. K. Singh,
S. K. Bandyopadhayay,
T P Sinha
Abstract:
The structure and dielectric properties of 6% $\rm{Sr}^{2+}$-substituted, modified Lead Zirconium Titanate (PZT) piezoelectric ceramic, with composition $[\rm{Pb}_{0.94}\rm{Sr}_{0.06}][(\rm{Mn}_{1/3}\rm{Sb}_{2/3})_{0.05}(\rm{Zr}_{0.54}\rm{Ti}_{0.46})_{0.95}]O_3$ and lead manganese antimonite as an additional dopant, synthesized by ceramic route have been investigated in a frequency range from 50Hz…
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The structure and dielectric properties of 6% $\rm{Sr}^{2+}$-substituted, modified Lead Zirconium Titanate (PZT) piezoelectric ceramic, with composition $[\rm{Pb}_{0.94}\rm{Sr}_{0.06}][(\rm{Mn}_{1/3}\rm{Sb}_{2/3})_{0.05}(\rm{Zr}_{0.54}\rm{Ti}_{0.46})_{0.95}]O_3$ and lead manganese antimonite as an additional dopant, synthesized by ceramic route have been investigated in a frequency range from 50Hz to 1MHz and in a temperature range between room temperature and 633K. The scanning electron micrograph of the sample taken at the room temperature confirms the formation of a fairly homogenous structure and well-formed grains with sharp boundaries. From the Rietveld analysis, it was found that the structure of the material is tetragonal with space group P4mm. The scaling behavior of imaginary part of the electric modulus suggests that the relaxation is described by the same mechanism at various temperatures. The values of the electromechanical coupling factor ($\rm{k_p}$), the high mechanical quality factor ($\rm{Q_m}$) and the piezoelectric coefficient ($\rm{d}_{33}$) of the synthesized sintered & poled ceramics gives a good set of values for the piezoelectric properties when compared with related materials, useful for various interesting piezoelectric device applications.
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Submitted 26 September, 2013;
originally announced September 2013.
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On the optical properties of Ag^{+15} ion-beam irradiated TiO_{2} and SnO_{2} thin films
Authors:
Hardeep Thakur,
Sanjeev Gautam,
P. Thakur,
K. K. Sharma,
Abhinav Pratap Singh,
Yogesh Kumar,
Ravi Kumar,
Keun Hwa Chae
Abstract:
The effects of 200-MeV Ag^{+15} ion irradiation on the optical properties of TiO_{2} and SnO_{2} thin films prepared by using the RF magnetron sputtering technique were investigated. These films were characterized by using UV-vis spectroscopy, and with increasing irradiation fluence, the transmittance for the TiO_{2} films was observed to increase systematically while that for SnO_{2} was observed…
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The effects of 200-MeV Ag^{+15} ion irradiation on the optical properties of TiO_{2} and SnO_{2} thin films prepared by using the RF magnetron sputtering technique were investigated. These films were characterized by using UV-vis spectroscopy, and with increasing irradiation fluence, the transmittance for the TiO_{2} films was observed to increase systematically while that for SnO_{2} was observed to decrease. Absorption spectra of the irradiated samples showed minor changes in the indirect bandgap from 3.44 to 3.59 eV with increasing irradiation fluence for TiO_{2} while significant changes in the direct bandgap from 3.92 to 3.6 eV were observed for SnO_{2}. The observed modifications in the optical properties of both the TiO_{2} and the SnO_{2} systems with irradiation can be attributed to controlled structural disorder/defects in the system.
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Submitted 12 December, 2012; v1 submitted 10 December, 2011;
originally announced December 2011.
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Dielectric Anomalies in a New Manganocuprate, Gd3Ba2Mn2Cu2O12
Authors:
Sudhindra Rayaprol,
Anjana Dogra,
S. D. Kaushik,
Kiran Singh,
S. Bhattacharya,
G. Anjum,
Y. Kumar,
N. K. Gaur,
Ravi Kumar
Abstract:
Dielectric response has been studied for a new manganocuprate, Gd3Ba2Mn2Cu2O12 (Gd3222) as a function of temperature (100 - 300 K) and frequency (75 kHz to 1 MHz). The dielectric constant (e) exhibits a two step increase (two peaks) in e(T) with increasing temperature from 100 to 300 K. The first peak is seen around 150 K and the second one around 210 K (both for 75 kHz). Increasing frequency sh…
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Dielectric response has been studied for a new manganocuprate, Gd3Ba2Mn2Cu2O12 (Gd3222) as a function of temperature (100 - 300 K) and frequency (75 kHz to 1 MHz). The dielectric constant (e) exhibits a two step increase (two peaks) in e(T) with increasing temperature from 100 to 300 K. The first peak is seen around 150 K and the second one around 210 K (both for 75 kHz). Increasing frequency shifts both the peaks to higher temperature side. The behavior of dielectric constant (e) and dielectric loss (tan_delta) matches with glassy behavior observed in many dipolar molecules.
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Submitted 4 September, 2009;
originally announced September 2009.
