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Raman Fingerprint of Pressure-Induced Phase Transitions in TiS3 Nanoribbons: Implications for Thermal Measurements under Extreme Stress Conditions
Authors:
K. K. Mishra,
T. R. Ravindran,
Joshua O. Island,
Eduardo Flores,
Jose Ramon Ares,
Carlos Sanchez,
Isabel J. Ferrer,
Herre S. J. van der Zant,
Amit Pawbake,
R. Kanawade,
Andres Castellanos-Gomez,
Dattatray J. Late
Abstract:
Two-dimensional layered trichalcogenide materials have recently attracted the attention of the scientific community because of its robust mechanical, thermal properties and applications in opto and nanoelectronics devices. We report the pressure dependence of out-of plane Ag Raman modes in high quality few-layers titanium trisulfide (TiS3) nanoribbons grown using a direct solid-gas reaction method…
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Two-dimensional layered trichalcogenide materials have recently attracted the attention of the scientific community because of its robust mechanical, thermal properties and applications in opto and nanoelectronics devices. We report the pressure dependence of out-of plane Ag Raman modes in high quality few-layers titanium trisulfide (TiS3) nanoribbons grown using a direct solid-gas reaction method and infer their cross-plane thermal expansion coefficient.Both mechanical stability and thermal properties of the TiS3 nanoribbons are elucidated using phonon-spectrum analyses. Raman spectroscopic studies at high pressure (up to 34 GPa) using a diamond anvil cell identify four prominent Ag Raman bands; a band at 557 cm-1 softens under compression, and others at 175, 300, and 370 cm-1 show normal hardening. Anomalies in phonon mode frequencies and excessive broadening in line-width of the soft phonon about ~ 13 GPa are attributed to the possible onset of a reversible structural transition. A complete structural phase transition at 43 GPa is inferred from Ag soft mode frequency (557 cm-1) versus pressure extrapolation curve, consistent with recent reported theoretical predictions. Using the experimental mode Grüneisen parameters i of Raman modes, the cross-plane thermal expansion coefficient Cv of the TiS3 nanoribbons at ambient phase is estimated to be1.32110-6K-1. The observed results are expected to be useful in calibration and performance of next generation nano-electronics and optical devices under extreme stress conditions.
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Submitted 25 November, 2020;
originally announced November 2020.
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Synthesis of Ni doped ZnO nanostructures by low temperature wet chemical method and their enhanced field emission properties
Authors:
Amit Kumar Rana,
Prashant Bankar,
Yogendra Kumar,
Mahendra A. More,
Dattatray J. Late,
Parasharam M. Shirage
Abstract:
In this study, we report the enhancement in field emission (FE) properties of ZnO nanostructure by Ni doping at the base pressure of ~1 x 10-8 mbar, which were grown by the simple wet chemical process. ZnO nanostructure shows single crystalline wurtzite structure up to Ni 10% doping. FESEM represents change in the nanostructure morphology from thick nanoneedles to nanoflakes via thin nanorods with…
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In this study, we report the enhancement in field emission (FE) properties of ZnO nanostructure by Ni doping at the base pressure of ~1 x 10-8 mbar, which were grown by the simple wet chemical process. ZnO nanostructure shows single crystalline wurtzite structure up to Ni 10% doping. FESEM represents change in the nanostructure morphology from thick nanoneedles to nanoflakes via thin nanorods with increase in Ni doped ZnO. The turn-on field required to draw a field emission (FE) current density at 1μA/cm2 is found to be 2.5, 2.3, 1.8 and 1.7 V/μm for ZnO(Ni0%), ZnO(Ni5%), ZnO(Ni7.5%) and ZnO(Ni10%), respectively.
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Submitted 31 August, 2017;
originally announced August 2017.
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Temperature dependent Raman spectroscopy of titanium trisulfide (TiS3) nanoribbons and nanosheets
Authors:
Amit S. Pawbake,
Joshua O. Island,
Eduardo Flores,
Jose Ramon Ares,
Carlos Sanchez,
Isabel J. Ferrer,
Sandesh R. Jadkar,
Herre S. J. van der Zant,
Andres Castellanos-Gomez,
Dattatray J. Late
Abstract:
Titanium trisulfide (TiS3) has recently attracted the interest of the 2D community as it presents a direct bandgap of ~1.0 eV, shows remarkable photoresponse, and has a predicted carrier mobility up to 10000 cm2V-1 s-1. However, a study of the vibrational properties of TiS3, relevant to understanding the electron-phonon interaction which can be the main mechanism limiting the charge carrier mobili…
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Titanium trisulfide (TiS3) has recently attracted the interest of the 2D community as it presents a direct bandgap of ~1.0 eV, shows remarkable photoresponse, and has a predicted carrier mobility up to 10000 cm2V-1 s-1. However, a study of the vibrational properties of TiS3, relevant to understanding the electron-phonon interaction which can be the main mechanism limiting the charge carrier mobility, is still lacking. In this work, we take the first steps to study the vibrational properties of TiS3 through temperature dependent Raman spectroscopy measurements of TiS3 nanoribbons and nanosheets. Our investigation shows that all the Raman modes linearly soften (red shift) as the temperature increases from 88 K to 570 K, due to the anharmonic vibrations of the lattice which also includes contributions from the lattice thermal expansion. This softening with the temperature of the TiS3 modes is more pronounced than that observed in other 2D semiconductors such as MoS2, MoSe2, WSe2 or black phosphorus (BP). This marked temperature dependence of the Raman could be exploited to determine the temperature of TiS3 nanodevices by using Raman spectroscopy as a non-invasive and local thermal probe. Interestingly, the TiS3 nanosheets show a stronger temperature dependence of the Raman modes than the nanoribbons, which we attribute to a lower interlayer coupling in the nanosheets.
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Submitted 19 October, 2015;
originally announced October 2015.
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A combined experimental and theoretical study of the electronic and vibrational properties of bulk and few-layer Td-WTe2
Authors:
Manoj K. Jana,
Anjali Singh,
Dattatray J. Late,
Catherine Rajamathi,
Kanishka Biswas,
Claudia Felser,
Umesh V. Waghmare,
C. N. R. Rao
Abstract:
The recent discovery of non-saturating giant positive magnetoresistance in Td-WTe2 has aroused great interest in this material. We have studied the structural, electronic and vibrational properties of bulk and few-layer Td-WTe2 experimentally and theoretically. Spin-orbit coupling is found to govern the semi-metallic character of Td-WTe2. Its structural link with the metallic 1T form provides an u…
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The recent discovery of non-saturating giant positive magnetoresistance in Td-WTe2 has aroused great interest in this material. We have studied the structural, electronic and vibrational properties of bulk and few-layer Td-WTe2 experimentally and theoretically. Spin-orbit coupling is found to govern the semi-metallic character of Td-WTe2. Its structural link with the metallic 1T form provides an understanding of its structural stability. We observe a metal to insulator transition and a change in the sign of the Seebeck coefficient around 373 K. Lattice vibrations in Td-WTe2 have been analyzed by first principle calculations. Out of the 33 possible zone-center Raman active modes, five distinct Raman bands are observed around 112, 118, 134, 165 and 212 cm-1 in bulk Td-WTe2. Based on symmetry analysis and the calculated Raman tensors, we assign the intense bands at 165 cm-1 and 212 cm-1 to the A_1^' and A_1^" modes respectively. We have examined the effect of temperature and the number of layers on the Raman spectrum. Most of the bands of Td-WTe2 stiffen, and the ratio of the integrated intensities of the A_1^" to A_1^' bands decreases in the few-layer sample, while all the bands soften in both bulk and few-layer samples with increasing temperature.
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Submitted 14 February, 2015;
originally announced February 2015.
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In situ characterisation of nanoscale electromechanical properties of quasi-two-dimensional MoS2 and MoO3
Authors:
Sumeet Walia,
Hussein Nili,
Sivacarendran Balendhran,
Dattatray J. Late,
Sharath Sriram,
Madhu Bhaskaran
Abstract:
Precise manipulation of electronic band structures of two-dimensional (2D) transition metal dichalcogenides and oxides (TMD&Os) via localised strain engineering is an exciting avenue for exploiting their unique characteristics for electronics, optoelectronics, and nanoelectromechanical systems (NEMS) applications. This work experimentally demonstrates that mechanically-induced electrical transitio…
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Precise manipulation of electronic band structures of two-dimensional (2D) transition metal dichalcogenides and oxides (TMD&Os) via localised strain engineering is an exciting avenue for exploiting their unique characteristics for electronics, optoelectronics, and nanoelectromechanical systems (NEMS) applications. This work experimentally demonstrates that mechanically-induced electrical transitions can be engineered in quasi-2D molybdenum disulphide (MoS2) and molybdenum trioxide (MoO3) using an in situ electrical nanoindentation technique. It is shown that localised strains on such quasi-2D layers can induce carrier transport alterations, thereby changing their electrical conduction behaviour. Such strain effects offer a potential tool for precisely manipulating the electronic transport properties of 2D TMD&Os, and understanding the interactions of the atomic electronic states in such layered materials.
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Submitted 20 January, 2015; v1 submitted 17 September, 2014;
originally announced September 2014.
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Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors
Authors:
Deep Jariwala,
Vinod K. Sangwan,
Dattatray J. Late,
James E. Johns,
Vinayak P. Dravid,
Tobin J. Marks,
Lincoln J. Lauhon,
Mark C. Hersam
Abstract:
Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with…
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Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature.
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Submitted 19 April, 2013;
originally announced April 2013.
