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Bulk and interface spin-orbit torques in Pt/Co/MgO thin film structures
Authors:
M. S. Gabor,
M. Belmeguenai,
I. M. Miron
Abstract:
We investigate the origin of spin-orbit torques (SOTs) in archetypical Pt/Co/MgO thin films structures by performing harmonic Hall measurements. The behaviour of the damping like (DL) effective field ($h_{DL}$) with varying the Pt layer thickness and the Co layer thickness indicates that bulk spin-Hall effect (SHE) in Pt is mainly responsible for DL-SOT. The insertion of a Pd ultrathin layer at th…
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We investigate the origin of spin-orbit torques (SOTs) in archetypical Pt/Co/MgO thin films structures by performing harmonic Hall measurements. The behaviour of the damping like (DL) effective field ($h_{DL}$) with varying the Pt layer thickness and the Co layer thickness indicates that bulk spin-Hall effect (SHE) in Pt is mainly responsible for DL-SOT. The insertion of a Pd ultrathin layer at the Pt/Co interface leads to a step decrease in $h_{DL}$, attributed to the modification of interfacial spin transparency. Further increase in Pd thickness led to a reduction of the interfacial spin-orbit coupling (iSOC) quantified by the decrease in the surface magnetic anisotropy. The consistent insensitivity of $h_{DL}$ to variations in iSOC at the bottom Pt/Co interface and oxidation at the top Co/MgO interface provides additional evidence for the bulk SHE origin of DL-SOT. The strong reduction in the field-like (FL) torque effective field ($h_{FL}$) with decreasing iSOC at the Pt/Co interface points to the interfacial nature of FL-SOT, either due to iSOC induced interfacial spin-currents or to the Rashba-Edelstein effect at the Pt/Co interface. Furthermore, we demonstrate that a FL-SOT develops at the top Co/MgO interface opposing the one generated at the bottom Pt/Co interface, whose strength increases with Co/MgO interfacial oxidation, and attributed to the Rashba-Edelstein effect.
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Submitted 11 March, 2024;
originally announced March 2024.
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Electrical detection and nucleation of a magnetic skyrmion in a magnetic tunnel junction observed via operando magnetic microscopy
Authors:
by J. Urrestarazu Larrañaga,
Naveen Sisodia,
Van Tuong Pham,
Ilaria Di Manici,
Aurélien Masseboeuf,
Kevin Garello,
Florian Disdier,
Bruno Fernandez,
Sebastian Wintz,
Markus Weigand,
Mohamed Belmeguenai,
Stefania Pizzini,
Ricardo Sousa,
Liliana Buda-Prejbeanu,
Gilles Gaudin,
Olivier Boulle
Abstract:
Magnetic skyrmions are topological spin textures which are envisioned as nanometre scale information carriers in magnetic memory and logic devices. The recent demonstration of room temperature stabilization of skyrmions and their current induced manipulation in industry compatible ultrathin films were first steps towards the realisation of such devices. However, important challenges remain regardi…
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Magnetic skyrmions are topological spin textures which are envisioned as nanometre scale information carriers in magnetic memory and logic devices. The recent demonstration of room temperature stabilization of skyrmions and their current induced manipulation in industry compatible ultrathin films were first steps towards the realisation of such devices. However, important challenges remain regarding the electrical detection and the low-power nucleation of skyrmions, which are required for the read and write operations. Here, we demonstrate, using operando magnetic microscopy experiments, the electrical detection of a single magnetic skyrmion in a magnetic tunnel junction (MTJ) and its nucleation and annihilation by gate voltage via voltage control of magnetic anisotropy. The nucleated skyrmion can be further manipulated by both gate voltage and external magnetic field, leading to tunable intermediate resistance states. Our results unambiguously demonstrate the readout and voltage controlled write operations in a single MTJ device, which is a major milestone for low power skyrmion based technologies.
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Submitted 1 August, 2023;
originally announced August 2023.
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Revealing nanoscale disorder in W/CoFeB/MgO ultra-thin films using domain wall motion
Authors:
Johannes Wilhelmus van der Jagt,
Vincent Jeudy,
André Thiaville,
Mamour Sall,
Nicolas Vernier,
Liza Herrera Diez,
Mohamed Belmeguenai,
Yves Roussigné,
Salim M. Chérif,
Mouad Fattouhi,
Luis Lopez-Diaz,
Alessio Lamperti,
Roméo Juge,
Dafiné Ravelosona
Abstract:
Disorder in ultra-thin magnetic films can significantly hinder domain wall motion. One of the main issues on the path towards efficient domain wall based devices remains the characterization of the pinning landscape at the nanoscale. In this paper, we study domain wall motion in W/CoFeB/MgO thin films with perpendicular magnetic anisotropy crystallized by annealing at 400$^{\circ}$C and a process…
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Disorder in ultra-thin magnetic films can significantly hinder domain wall motion. One of the main issues on the path towards efficient domain wall based devices remains the characterization of the pinning landscape at the nanoscale. In this paper, we study domain wall motion in W/CoFeB/MgO thin films with perpendicular magnetic anisotropy crystallized by annealing at 400$^{\circ}$C and a process based on He$^{+}$ irradiation combined with elevated temperatures. Magnetic properties are similar for the whole series of samples, while the magnetic domain wall mobility is critically improved in the irradiated samples. By using an analytical model to extract nanoscale pinning parameters, we reveal important variations in the disorder of the crystallized samples. This work offers a unique opportunity to selectively analyze the effects of disorder on the domain wall dynamics, without the contribution of changes in the magnetic properties. Our results highlight the importance of evaluating the nanoscale pinning parameters of the material when designing devices based on domain wall motion, which in return can be a powerful tool to probe the disorder in ultra-thin magnetic films.
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Submitted 19 August, 2022;
originally announced August 2022.
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Gate-controlled skyrmion and domain wall chirality
Authors:
Charles-Elie Fillion,
Johanna Fischer,
Raj Kumar,
Aymen Fassatoui,
Stefania Pizzini,
Laurent Ranno,
Djoudi Ourdani,
Mohamed Belmeguenai,
Yves Roussigné,
Salim-Mourad Chérif,
Stéphane Auffret,
Isabelle Joumard,
Olivier Boulle,
Gilles Gaudin,
Liliana Buda-Prejbeanu,
Claire Baraduc,
Hélène Béa
Abstract:
Magnetic skyrmions are localized chiral spin textures, which offer great promise to store and process information at the nanoscale. In the presence of asymmetric exchange interactions, their chirality, which governs their dynamics, is generally considered as an intrinsic parameter set during the sample deposition. In this work, we experimentally demonstrate that a gate voltage can control this key…
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Magnetic skyrmions are localized chiral spin textures, which offer great promise to store and process information at the nanoscale. In the presence of asymmetric exchange interactions, their chirality, which governs their dynamics, is generally considered as an intrinsic parameter set during the sample deposition. In this work, we experimentally demonstrate that a gate voltage can control this key parameter. We probe the chirality of skyrmions and chiral domain walls by observing the direction of their current-induced motion and show that a gate voltage can reverse it. This local and dynamical reversal of the chirality is due to a sign inversion of the interfacial Dzyaloshinskii-Moriya interaction that we attribute to ionic migration of oxygen under gate voltage. Micromagnetic simulations show that the chirality reversal is a continuous transformation, in which the skyrmion is conserved. This control of chirality with 2 - 3 V gate voltage can be used for skyrmion-based logic devices, yielding new functionalities.
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Submitted 7 September, 2022; v1 submitted 8 April, 2022;
originally announced April 2022.
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Skyrmions in synthetic antiferromagnets and their nucleation via electrical current and ultrafast laser illumination
Authors:
Roméo Juge,
Naveen Sisodia,
Joseba Urrestarazu Larrañaga,
Qiang Zhang,
Van Tuong Pham,
Kumari Gaurav Rana,
Brice Sarpi,
Nicolas Mille,
Stefan Stanescu,
Rachid Belkhou,
Mohamad-Assaad Mawass,
Nina Novakovic-Marinkovic,
Florian Kronast,
Markus Weigand,
Joachim Gräfe,
Sebastian Wintz,
Simone Finizio,
Jörg Raabe,
Lucia Aballe,
Michael Foerster,
Mohamed Belmeguenai,
Liliana Buda-Prejbeanu,
Justin M. Shaw,
Hans T. Nembach,
Laurent Ranno
, et al. (2 additional authors not shown)
Abstract:
Magnetic skyrmions are topological spin textures that hold great promise as nanoscale information carriers in non-volatile memory and logic devices. While room-temperature magnetic skyrmions and their current-induced manipulation were recently demonstrated, the stray field resulting from their finite magnetization as well as their topological charge limit their minimum size and reliable motion in…
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Magnetic skyrmions are topological spin textures that hold great promise as nanoscale information carriers in non-volatile memory and logic devices. While room-temperature magnetic skyrmions and their current-induced manipulation were recently demonstrated, the stray field resulting from their finite magnetization as well as their topological charge limit their minimum size and reliable motion in tracks. Antiferromagnetic (AF) skyrmions allow these limitations to be lifted owing to their vanishing magnetization and net zero topological charge, promising room-temperature, ultrasmall skyrmions, fast dynamics, and insensitivity to external magnetic fields. While room-temperature AF spin textures have been recently demonstrated, the observation and controlled nucleation of AF skyrmions operable at room temperature in industry-compatible synthetic antiferromagnetic (SAF) material systems is still lacking. Here we demonstrate that isolated skyrmions can be stabilized at zero field and room temperature in a fully compensated SAF. Using X-ray microscopy techniques, we are able to observe the skyrmions in the different SAF layers and demonstrate their antiparallel alignment. The results are substantiated by micromagnetic simulations and analytical models using experimental parameters, which confirm the chiral SAF skyrmion spin texture and allow the identification of the physical mechanisms that control the SAF skyrmion size and stability. We also demonstrate the local nucleation of SAF skyrmions via local current injection as well as ultrafast laser excitations at zero field. These results will enable the utilization of SAF skyrmions in skyrmion-based devices.
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Submitted 23 November, 2021;
originally announced November 2021.
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Multiple magneto-ionic regimes in Ta/Co$_{20}$Fe$_{60}$B$_{20}$/HfO$_{2}$
Authors:
R. Pachat,
D. Ourdani,
J. W. van der Jagt,
M. -A. Syskaki,
A. Di Pietro,
Y. Roussigné,
S. Ono,
M. S. Gabor,
M. Chérif,
G. Durin,
J. Langer,
M. Belmeguenai,
D. Ravelosona,
L. Herrera Diez
Abstract:
In Ta/CoFeB/HfO2 stacks a gate voltage drives, in a nonvolatile way, the system from an underoxidized state exhibiting in-plane anisotropy (IPA) to an optimum oxidation level resulting in perpendicular anisotropy (PMA) and further into an overoxidized state with IPA. The IPA$\,\to\,$PMA regime is found to be significantly faster than the PMA$\,\to\,$IPA regime, while only the latter shows full rev…
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In Ta/CoFeB/HfO2 stacks a gate voltage drives, in a nonvolatile way, the system from an underoxidized state exhibiting in-plane anisotropy (IPA) to an optimum oxidation level resulting in perpendicular anisotropy (PMA) and further into an overoxidized state with IPA. The IPA$\,\to\,$PMA regime is found to be significantly faster than the PMA$\,\to\,$IPA regime, while only the latter shows full reversibility under the same gate voltages. The effective damping parameter also shows a marked dependence with gate voltage in the IPA$\,\to\,$PMA regime, going from 0.029 to 0.012, and only a modest increase to 0.014 in the PMA$\,\to\,$IPA regime. The existence of two magneto-ionic regimes has been linked to a difference in the chemical environment of the anchoring points of oxygen species added to underoxidized or overoxidized layers. Our results show that multiple magneto-ionic regimes can exist in a single device and that their characterization is of great importance for the design of high performance spintronics devices.
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Submitted 12 May, 2021;
originally announced May 2021.
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Imprint from ferromagnetic skyrmions in an antiferromagnet via exchange bias
Authors:
Kumari Gaurav Rana,
Rafael Lopes Seeger,
Sandra Ruiz-Gómez,
Roméo Juge,
Qiang Zhang,
Kaushik Bairagi,
Van Tuong Pham,
Mohamed Belmeguenai,
Stéphane Auffret,
Michael Foerster,
Lucia Aballe,
Gilles Gaudin,
Vincent Baltz,
Olivier Boulle
Abstract:
Magnetic skyrmions are topological spin textures holding great potential as nanoscale information carriers. Recently, skyrmions have been predicted in antiferromagnets, with key advantages in terms of stability, size, and dynamical properties over their ferromagnetic analogs. However, their experimental demonstration is still lacking. Here, we show the imprint from ferromagnetic skyrmions into a t…
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Magnetic skyrmions are topological spin textures holding great potential as nanoscale information carriers. Recently, skyrmions have been predicted in antiferromagnets, with key advantages in terms of stability, size, and dynamical properties over their ferromagnetic analogs. However, their experimental demonstration is still lacking. Here, we show the imprint from ferromagnetic skyrmions into a thin film of an IrMn antiferromagnet, at room temperature and zero external magnetic field, using exchange-bias. Using high-spatial-resolution x-ray magnetic circular dichroism photoemission electron microscopy (XMCD-PEEM), we observed the imprinted spin textures within the IrMn from the XMCD signal of the uncompensated Mn spins at the interface with the ferromagnet. This result opens up a path for logic and memory devices based on skyrmion manipulation in antiferromagnets.
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Submitted 24 November, 2021; v1 submitted 30 September, 2020;
originally announced September 2020.
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Control of skyrmion chirality in Ta/FeCoB/TaOx trilayers by TaOx oxidation and FeCoB thickness
Authors:
Raj Kumar,
Charles-Elie Fillion,
Bertrand Lovery,
Ibtissem Benguettat-El Mokhtari,
Isabelle Joumard,
Stéphane Auffret,
Laurent Ranno,
Yves Roussigné,
Salim-Mourad Chérif,
Andrey Stashkevich,
Mohamed Belmeguenai,
Claire Baraduc,
Hélène Béa
Abstract:
Skyrmions are magnetic bubbles with nontrivial topology envisioned as data bits for ultrafast and power-efficient spintronic memory and logic devices. They may be stabilized in heavy-metal/ferromagnetic/oxide trilayer systems. The skyrmion chirality is then determined by the sign of the interfacial Dzyaloshinskii-Moriya interaction (DMI). Nevertheless, for apparently identical systems, there is so…
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Skyrmions are magnetic bubbles with nontrivial topology envisioned as data bits for ultrafast and power-efficient spintronic memory and logic devices. They may be stabilized in heavy-metal/ferromagnetic/oxide trilayer systems. The skyrmion chirality is then determined by the sign of the interfacial Dzyaloshinskii-Moriya interaction (DMI). Nevertheless, for apparently identical systems, there is some controversy about the DMI sign. Here, we show that the degree of oxidation of the top interface and the thickness of the ferromagnetic layer play a major role. Using Brillouin light-scattering measurements in Ta/Fe-Co-B/TaOx trilayers, we demonstrate a sign change of the DMI with the degree of oxidation of the Fe-Co-B/TaOx interface. Using polar magneto-optical Kerr effect microscopy, we consistently observe a reversal of the direction of current-induced motion of skyrmions with the oxidation level of TaOx; this is attributed to their chirality reversal. In addition, a second chirality reversal is observed when changing the Fe-Co-B thickness, probably due to the proximity of the two Fe-Co-B interfaces in the ultrathin case. By properly tuning the chirality of the skyrmion, spin-transfer and spin-orbit torques combine constructively to enhance the skyrmion velocity. These observations thus allow us to envision an optimization of the material parameters to produce highly mobile skyrmions. Moreover, this chirality control enables a versatile manipulation of skyrmions and paves the way towards multidirectional devices.
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Submitted 28 February, 2023; v1 submitted 28 September, 2020;
originally announced September 2020.
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Room temperature skyrmions at zero field in exchange-biased ultrathin films
Authors:
K. Gaurav Rana,
A. Finco,
F. Fabre,
S. Chouaieb,
A. Haykal,
L. D. Buda-Prejbeanu,
O. Fruchart,
S. Le Denmat,
P. David,
M. Belmeguenai,
T. Denneulin,
R. E. Dunin-Borkowski,
G. Gaudin,
V. Jacques,
O. Boulle
Abstract:
We demonstrate that magnetic skyrmions with a mean diameter around 60 nm can be stabilized at room temperature and zero external magnetic field in an exchange-biased Pt/Co/NiFe/IrMn multilayer stack. This is achieved through an advanced optimization of the multilayer stack composition in order to balance the different magnetic energies controlling the skyrmion size and stability. Magnetic imaging…
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We demonstrate that magnetic skyrmions with a mean diameter around 60 nm can be stabilized at room temperature and zero external magnetic field in an exchange-biased Pt/Co/NiFe/IrMn multilayer stack. This is achieved through an advanced optimization of the multilayer stack composition in order to balance the different magnetic energies controlling the skyrmion size and stability. Magnetic imaging is performed both with magnetic force microscopy and scanning Nitrogen-Vacancy magnetometry, the latter providing unambiguous measurements at zero external magnetic field. In such samples, we show that exchange bias provides an immunity of the skyrmion spin texture to moderate external magnetic field, in the tens of mT range, which is an important feature for applications as memory devices. These results establish exchange-biased multilayer stacks as a promising platform towards the effective realization of memory and logic devices based on magnetic skyrmions.
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Submitted 28 January, 2020; v1 submitted 3 January, 2020;
originally announced January 2020.
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Current-Driven Skyrmion Dynamics and Drive-Dependent Skyrmion Hall Effect in an Ultrathin Film
Authors:
Roméo Juge,
Soong-Geun Je,
Dayane de Souza Chaves,
Liliana D. Buda-Prejbeanu,
José Peña-Garcia,
Jayshankar Nath,
Ioan Mihai Miron,
Kumari Gaurav Rana,
Lucia Aballe,
Michael Foerster,
Francesca Genuzio,
Tevfik Onur Menteş,
Andrea Locatelli,
Francesco Maccherozzi,
Sarnjeet S. Dhesi,
Mohamed Belmeguenai,
Yves Roussigné,
Stéphane Auffret,
Stefania Pizzini,
Gilles Gaudin,
Jan Vogel,
Olivier Boulle
Abstract:
Magnetic skyrmions are chiral spin textures that hold great promise as nanoscale information carriers. Since their first observation at room temperature, progress has been made in their current-induced manipulation, with fast motion reported in stray-field-coupled multilayers. However, the complex spin textures with hybrid chiralities and large power dissipation in these multilayers limit their pr…
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Magnetic skyrmions are chiral spin textures that hold great promise as nanoscale information carriers. Since their first observation at room temperature, progress has been made in their current-induced manipulation, with fast motion reported in stray-field-coupled multilayers. However, the complex spin textures with hybrid chiralities and large power dissipation in these multilayers limit their practical implementation and the fundamental understanding of their dynamics. Here, we report on the current-driven motion of Néel skyrmions with diameters in the 100-nm range in an ultrathin Pt/Co/MgO trilayer. We find that these skyrmions can be driven at a speed of 100 m/s and exhibit a drive-dependent skyrmion Hall effect, which is accounted for by the effect of pinning. Our experiments are well substantiated by an analytical model of the skyrmion dynamics as well as by micromagnetic simulations including material inhomogeneities. This good agreement is enabled by the simple skyrmion spin structure in our system and a thorough characterization of its static and dynamical properties.
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Submitted 9 October, 2019; v1 submitted 17 April, 2019;
originally announced April 2019.
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Current-induced nucleation and dynamics of skyrmions in a Co-based Heusler alloy
Authors:
W. Akhtar,
A. Hrabec,
S. Chouaieb,
A. Haykal,
I. Gross,
M. Belmeguenai,
M. S. Gabor,
B. Shields,
P. Maletinsky,
A. Thiaville,
S. Rohart,
V. Jacques
Abstract:
We demonstrate room-temperature stabilization of dipolar magnetic skyrmions with diameters in the range of $100$ nm in a single ultrathin layer of the Heusler alloy Co$_2$FeAl (CFA) under moderate magnetic fields. Current-induced skyrmion dynamics in microwires is studied with a scanning Nitrogen-Vacancy magnetometer operating in the photoluminescence quenching mode. We first demonstrate skyrmion…
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We demonstrate room-temperature stabilization of dipolar magnetic skyrmions with diameters in the range of $100$ nm in a single ultrathin layer of the Heusler alloy Co$_2$FeAl (CFA) under moderate magnetic fields. Current-induced skyrmion dynamics in microwires is studied with a scanning Nitrogen-Vacancy magnetometer operating in the photoluminescence quenching mode. We first demonstrate skyrmion nucleation by spin-orbit torque and show that its efficiency can be significantly improved using tilted magnetic fields, an effect which is not specific to Heusler alloys and could be advantageous for future skyrmion-based devices. We then show that current-induced skyrmion motion remains limited by strong pinning effects, even though CFA is a magnetic material with a low magnetic damping parameter.
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Submitted 13 December, 2018;
originally announced December 2018.
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Large voltage tuning of Dzyaloshinskii-Moriya Interaction: a route towards dynamic control of skyrmion chirality
Authors:
Titiksha Srivastava,
Marine Schott,
Roméo Juge,
Viola Křižáková,
Mohamed Belmeguenai,
Yves Soussigné,
Anne Bernand-Mantel,
Laurent Ranno,
Stefania Pizzini,
Salim-Mourad Chérif,
Andrey Stashkevich,
Stéphane Auffret,
Olivier Boulle,
Gilles Gaudin,
Mair Chshiev,
Claire Baraduc,
Hélène Béa
Abstract:
Electric control of magnetism is a prerequisite for efficient and low power spintronic devices. More specifically, in heavy metal/ ferromagnet/ insulator heterostructures, voltage gating has been shown to locally and dynamically tune magnetic properties like interface anisotropy and saturation magnetization. However, its effect on interfacial Dzyaloshinskii-Moriya Interaction (DMI), which is cruci…
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Electric control of magnetism is a prerequisite for efficient and low power spintronic devices. More specifically, in heavy metal/ ferromagnet/ insulator heterostructures, voltage gating has been shown to locally and dynamically tune magnetic properties like interface anisotropy and saturation magnetization. However, its effect on interfacial Dzyaloshinskii-Moriya Interaction (DMI), which is crucial for the stability of magnetic skyrmions, has been challenging to achieve and has not been reported yet for ultrathin films. Here, we demonstrate 130% variation of DMI with electric field in Ta/FeCoB/TaOx trilayers through Brillouin Light Spectroscopy (BLS). Using polar- Magneto-Optical-Kerr-Effect microscopy, we further show a monotonic variation of DMI and skyrmionic bubble size with electric field, with an unprecedented efficiency. We anticipate through our observations that a sign reversal of DMI with electric field is possible, leading to a chirality switch. This dynamic manipulation of DMI establishes an additional degree of control to engineer programmable skyrmion based memory or logic devices.
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Submitted 26 June, 2018; v1 submitted 26 April, 2018;
originally announced April 2018.
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Thickness-dependence of the Dzyaloshinskii-Moriya interaction in Co2FeAl ultrathin films: effects of the annealing temperature and the heavy metal material
Authors:
M. Belmeguenai,
Y. Roussigné,
S. M. Chérif,
A. Stashkevich,
M. Nasui,
M. Gabor,
A. Mora-Hernández,
B. Nicholson,
O. -O. Inyang,
A. T. Hindmarch,
L. Bouchenoire
Abstract:
Interfacial Dzyaloshinskii-Moriya interaction (iDMI) has been investigated in Co2FeAl (CFA) ultrathin films of various thicknesses (0.8 nm<tCFA<2 nm) grown on Si substrates, using Pt, W, Ir and MgO buffer or/and capping layers. Vibrating sample magnetometry revealed that magnetization at saturation (Ms) for the Pt and Ir buffered films is higher than the usual Ms of CFA due to the proximity induce…
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Interfacial Dzyaloshinskii-Moriya interaction (iDMI) has been investigated in Co2FeAl (CFA) ultrathin films of various thicknesses (0.8 nm<tCFA<2 nm) grown on Si substrates, using Pt, W, Ir and MgO buffer or/and capping layers. Vibrating sample magnetometry revealed that magnetization at saturation (Ms) for the Pt and Ir buffered films is higher than the usual Ms of CFA due to the proximity induced magnetization (PIM) in Ir and Pt, estimated to be 19% and 27%, respectively. The presence of PIM in these materials is confirmed using x-ray resonant magnetic reflectivity. Moreover, while no PIM is induced in W, higher PIM is obtained with Pt when it is used as buffer layer rather than capping layer. Brillouin light scattering (BLS) in the Damon-Eshbach geometry has been used to investigate iDMI constants and the perpendicular anisotropy field versus the annealing temperature. The DMI sign has been found to be negative for Pt/CFA and Ir/CFA while it is positive for W/CFA. The thickness dependence of the effective iDMI constant for stacks involving Pt and W shows the existence of two regimes similarly to that of the perpendicular anisotropy constant due to the degradation of the interfaces as the CFA thickness approaches the nanometer. The surface iDMI and anisotropy constants of each stack have been determined for the thickest samples where a linear thickness dependence of the effective iDMI constant and the effective magnetization has been observed. The interface anisotropy and iDMI constants, investigated for Pt/CFA/MgO system, showed different trends with the annealing temperature. The decrease of iDMI constant with increasing annealing temperature is probably due to the electronic structure changes at the interfaces, while the increase of the interface anisotropy constant is coherent the interface quality and disorder enhancement.
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Submitted 21 November, 2017;
originally announced November 2017.
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Investigation of the interfacial Dzyaloshinskii-Moriya interaction sign in Ir/Co2FeAl systems by Brillouin light scattering
Authors:
M. Belmeguenai,
M. S. Gabor,
Y. Roussigné,
T. Petrisor jr,
R. B. Mos,
A. Stashkevich,
S. M. Chérif,
C. Tiusan
Abstract:
Co2FeAl (CFA) ultrathin films, of various thicknesses (0.9 nm<tCFA<1.8 nm), have been grown by sputtering on Si substrates, using Ir as a buffer layer. The magnetic properties of the structures have been studied by vibrating sample magnetometry (VSM), miscrostrip ferromagnetic resonance (MS-FMR) and Brillouin light scattering (BLS) in the Damon-Eshbach geometry. VSM characterizations show that fil…
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Co2FeAl (CFA) ultrathin films, of various thicknesses (0.9 nm<tCFA<1.8 nm), have been grown by sputtering on Si substrates, using Ir as a buffer layer. The magnetic properties of the structures have been studied by vibrating sample magnetometry (VSM), miscrostrip ferromagnetic resonance (MS-FMR) and Brillouin light scattering (BLS) in the Damon-Eshbach geometry. VSM characterizations show that films are mostly in-plane magnetized and the perpendicular saturating field increases with decreasing CFA thickness suggesting the existence of interface anisotropy. The presence of magnetic dead layers of 0.44 nm has been detected by VSM. The MS-FMR with perpendicular applied magnetic field has been used to determine the gyromagnetic factor. The BLS measurements reveal a pronounced nonreciprocal spin waves propagation, due to the interfacial Dzyaloshinskii-Moriya interaction (DMI) induced by Ir interface with CFA, which increases with decreasing CFA thickness. The DMI sign has been found to be the same (negative) as that of Pt/Co, in contrast to the ab-initio calculation on Ir/Co. The thickness dependence of the effective DMI constant shows the existence of two regimes similarly to that of the perpendicular anisotropy constant. The DMI constant Ds was estimated to be -0.37 pJ/m for the thickest samples where a linear thickness dependence of the effective DMI constant has been observed.
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Submitted 6 October, 2017;
originally announced October 2017.
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Interface Dzyaloshinskii-Moriya interaction in the interlayer exchange antiferromagnetic coupled Pt/CoFeB/Ru/CoFeB systems
Authors:
M. Belmeguenai,
H. Bouloussa,
Y. Roussigné,
M. S. Gabor,
T. Petrisor jr.,
C. Tiusan,
H. Yang,
A. Stashkevich,
S. M. Chérif
Abstract:
Interfacial Dzyaloshinskii-Moriya interaction (iDMI) in interlayer exchange coupled (IEC) Pt/Co$_{20}$Fe$_{60}$B$_{20}$(1.12 nm)/Ru/Co$_{20}$Fe$_{60}$B$_{20}$(1.12 nm) systems have been studied theoretically and experimentally. Vibrating sample magnetometer has been used to measure their magnetization at saturation and their interlayer exchange coupling constants. These latter are found to be of a…
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Interfacial Dzyaloshinskii-Moriya interaction (iDMI) in interlayer exchange coupled (IEC) Pt/Co$_{20}$Fe$_{60}$B$_{20}$(1.12 nm)/Ru/Co$_{20}$Fe$_{60}$B$_{20}$(1.12 nm) systems have been studied theoretically and experimentally. Vibrating sample magnetometer has been used to measure their magnetization at saturation and their interlayer exchange coupling constants. These latter are found to be of an antiferromagnetic nature for the investigated Ru range thickness (0.5-1 nm). Their dynamic magnetic properties were studied using Brillouin light scattering (BLS) technique. The BLS measurements reveal pronounced non-reciprocal spin waves propagation. In contrast to the calculations for symmetrical IEC CoFeB layers, this experimental nonreciprocity is Ru thickness and thus coupling strength dependent. Therefore, to explain the experimental behaviour, a theoretical model based on the perpendicular interface anisotropy difference between the bottom and top CoFeB layers has been developed. We show that the Ru thickness dependence of the spin wave non-reciprocity is well reproduced by considering a constant iDMI and different perpendicular interfacial anisotropy fields between the top and bottom CoFeB layers. This anisotropy difference has been confirmed by the investigation of the CoFeB thickness dependence of effective magnetization of Pt/CoFeB/Ru and Ru/CoFeB/MgO individual layers, where a linear behaviour has been observed.
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Submitted 11 July, 2017;
originally announced July 2017.
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Making the Dzyaloshinskii-Moriya interaction visible
Authors:
A. Hrabec,
M. Belmeguenai,
A. Stashkevich,
S. M. Cherif,
S. Rohart,
Y. Roussigne,
A. Thiaville
Abstract:
Brillouin light spectroscopy is a powerful and robust technique for measuring the interfacial Dzyaloshinskii-Moriya interaction in thin films with broken inversion symmetry. Here we show that the magnon visibility, i.e. the intensity of the inelastically scattered light, strongly depends on the thickness of the dielectric seed material - SiO$_2$. By using both, analytical thin-film optics and nume…
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Brillouin light spectroscopy is a powerful and robust technique for measuring the interfacial Dzyaloshinskii-Moriya interaction in thin films with broken inversion symmetry. Here we show that the magnon visibility, i.e. the intensity of the inelastically scattered light, strongly depends on the thickness of the dielectric seed material - SiO$_2$. By using both, analytical thin-film optics and numerical calculations, we reproduce the experimental data. We therefore provide a guideline for the maximization of the signal by adapting the substrate properties to the geometry of the measurement. Such a boost-up of the signal eases the magnon visualization in ultrathin magnetic films, speeds-up the measurement and increases the reliability of the data.
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Submitted 7 June, 2017;
originally announced June 2017.
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The interfacial nature of proximity induced magnetism and the Dzyaloshinskii-Moriya interaction at the Pt/Co interface
Authors:
R. M. Rowan-Robinson,
A. A. Stashkevich,
Y. Roussigne,
M. Belmeguenai,
S-M. Cherif,
A. Thiaville,
T. P. A. Hase,
A. T. Hindmarch,
D. Atkinson
Abstract:
The Dzyaloshinskii-Moriya interaction (DMI) has been shown to stabilise Neél domain walls in magnetic thin films, allowing high domain wall velocities driven by spin current effects. DMI occurs at the interface between ferromagnetic and heavy metal layers with strong spin-orbit coupling, but details of the interaction remain to be understood and the role of proximity induced magnetism (PIM) in the…
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The Dzyaloshinskii-Moriya interaction (DMI) has been shown to stabilise Neél domain walls in magnetic thin films, allowing high domain wall velocities driven by spin current effects. DMI occurs at the interface between ferromagnetic and heavy metal layers with strong spin-orbit coupling, but details of the interaction remain to be understood and the role of proximity induced magnetism (PIM) in the heavy metal is unknown. We report interfacial DMI and PIM in Pt determined as a function of Au and Ir spacer layers in Pt/Co/Au,Ir/Pt. The length-scale for both interactions is sensitive to sub-nanometre changes in the spacer thickness, and they correlate over sub mono-layer spacer thicknesses, but not for thicker spacers. The spacer layer thickness dependence of the Pt PIM for both Au and Ir shows a rapid monotonic decay, while the DMI changes rapidly but has a two-step approach to saturation and continues to change, even after the PIM is lost.
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Submitted 5 April, 2017;
originally announced April 2017.
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Anisotropic Dzyaloshinskii-Moriya Interaction in ultra-thin epitaxial Au/Co/W(110)
Authors:
Lorenzo Camosi,
Stanislas Rohart,
Olivier Fruchart,
Stefania Pizzini,
Mohamed Belmeguenai,
Yves Roussigné,
Andreï Stachkevitch,
Salim Mourad Chérif,
Laurent Ranno,
Maurizio De Santis,
Jan Vogel
Abstract:
We have used Brillouin Light Scattering spectroscopy to independently determine the in-plane Magneto-Crystalline Anisotropy and the Dzyaloshinskii-Moriya Interaction (DMI) in out-of-plane magnetized Au/Co/W(110). We found that the DMI strength is 2-3 times larger along the bcc$[\bar{1}10]$ than along the bcc$[001]$ direction. We use analytical considerations to illustrate the relationship between…
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We have used Brillouin Light Scattering spectroscopy to independently determine the in-plane Magneto-Crystalline Anisotropy and the Dzyaloshinskii-Moriya Interaction (DMI) in out-of-plane magnetized Au/Co/W(110). We found that the DMI strength is 2-3 times larger along the bcc$[\bar{1}10]$ than along the bcc$[001]$ direction. We use analytical considerations to illustrate the relationship between the crystal symmetry of the stack and the anisotropy of microscopic DMI. Such an anisotropic DMI is the first step to realize isolated elliptical skyrmions or anti-skyrmions in thin film systems with $C_{2v}$ symmetry.
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Submitted 30 May, 2017; v1 submitted 18 January, 2017;
originally announced January 2017.
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Current-induced skyrmion generation and dynamics in symmetric bilayers
Authors:
Ales Hrabec,
Joao Sampaio,
Mohamed Belmeguenai,
Isabell Gross,
Raphael Weil,
Salim Mourad Chérif,
Andrei Stachkevitch,
Vincent Jacques,
Andre Thiaville,
Stanislas Rohart
Abstract:
Magnetic skyrmions are textures behaving as quasiparticles which are topologically different from other states. Their discovery in systems with broken inversion symmetry sparked the search for materials containing such magnetic phase at room temperature. Their topological properties combined with the chirality-related spin-orbit torques make them interesting objects to control the magnetization at…
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Magnetic skyrmions are textures behaving as quasiparticles which are topologically different from other states. Their discovery in systems with broken inversion symmetry sparked the search for materials containing such magnetic phase at room temperature. Their topological properties combined with the chirality-related spin-orbit torques make them interesting objects to control the magnetization at nanoscale. Here we show that a pair of coupled skyrmions with the same topological charge and opposite chiralities can be stabilized in a symmetric magnetic bilayer system by combining Dzyaloshinskii-Moriya interaction (DMI) and dipolar coupling effects. This effect opens a new path for skyrmion stabilization with much lower DMI. We then demonstrate in a single device with two different electrodes that such skyrmions can be efficiently and independently written and shifted by electric current at large velocities. The skyrmionic nature of the observed quasiparticles is further confirmed by using the gyrotropic force as a topological filter. These results set the ground for emerging spintronic technologies where issues concerning skyrmion stability, nucleation, and propagation are paramount.
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Submitted 23 February, 2017; v1 submitted 2 November, 2016;
originally announced November 2016.
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Probing the Dzyaloshinskii-Moriya interaction in CoFeB ultrathin films using domain wall creep and Brillouin light spectroscopy
Authors:
R. Soucaille,
M. Belmeguenai,
J. Torrejon,
J. -V. Kim,
T. Devolder,
Y. Roussigné,
S. -M. Chérif,
A. A. Stashkevich,
M. Hayashi,
J. -P. Adam
Abstract:
We have characterized the strength of the interfacial Dyzaloshinskii-Moriya interaction (DMI) in ultrathin perpendicularly magnetized CoFeB/MgO films, grown on different underlayers of W, TaN, and Hf, using two experimental methods. First, we determined the effective DMI field from measurements of field-driven domain wall motion in the creep regime, where applied in-plane magnetic fields induce an…
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We have characterized the strength of the interfacial Dyzaloshinskii-Moriya interaction (DMI) in ultrathin perpendicularly magnetized CoFeB/MgO films, grown on different underlayers of W, TaN, and Hf, using two experimental methods. First, we determined the effective DMI field from measurements of field-driven domain wall motion in the creep regime, where applied in-plane magnetic fields induce an anisotropy in the wall propagation that is correlated with the DMI strength. Second, Brillouin light spectroscopy was employed to quantify the frequency non-reciprocity of spin waves in the CoFeB layers, which yielded an independent measurement of the DMI. By combining these results, we show that DMI estimates from the different techniques only yield qualitative agreement, which suggests that open questions remain on the underlying models used to interpret these results.
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Submitted 19 April, 2016;
originally announced April 2016.
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Room temperature chiral magnetic skyrmion in ultrathin magnetic nanostructures
Authors:
Olivier Boulle,
Jan Vogel,
Hongxin Yang,
Stefania Pizzini,
Dayane de Souza Chaves,
Andrea Locatelli,
Tevfik Onur Menteş Alessandro Sala,
Liliana D. Buda-Prejbeanu,
Olivier Klein,
Mohamed Belmeguenai,
Yves Roussigné,
Andrey Stashkevich,
Salim Mourad Chérif,
Lucia Aballe,
Michael Foerster,
Mairbek Chshiev,
Stéphane Auffret,
Ioan Mihai Miron,
Gilles Gaudin
Abstract:
Magnetic skyrmions are chiral spin structures with a whirling configuration. Their topological properties, nanometer size and the fact that they can be moved by small current densities have opened a new paradigm for the manipulation of magnetisation at the nanoscale. To date, chiral skyrmion structures have been experimentally demonstrated only in bulk materials and in epitaxial ultrathin films an…
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Magnetic skyrmions are chiral spin structures with a whirling configuration. Their topological properties, nanometer size and the fact that they can be moved by small current densities have opened a new paradigm for the manipulation of magnetisation at the nanoscale. To date, chiral skyrmion structures have been experimentally demonstrated only in bulk materials and in epitaxial ultrathin films and under external magnetic field or at low temperature. Here, we report on the observation of stable skyrmions in sputtered ultrathin Pt/Co/MgO nanostructures, at room temperature and zero applied magnetic field. We use high lateral resolution X-ray magnetic circular dichroism microscopy to image their chiral Néel internal structure which we explain as due to the large strength of the Dzyaloshinskii-Moriya interaction as revealed by spin wave spectroscopy measurements. Our results are substantiated by micromagnetic simulations and numerical models, which allow the identification of the physical mechanisms governing the size and stability of the skyrmions.
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Submitted 10 January, 2016;
originally announced January 2016.
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Effective 90-degree magnetization rotation in Co2FeAl thin film/Piezoelectric system probed by microstripline ferromagnetic
Authors:
M. Gueye,
F. Zighem,
M. Belmeguenai,
M. Gabor,
C. Tuisan,
D. Faurie
Abstract:
Microstripline ferromagnetic resonance technique has been used to study the indirect magnetoelectric coupling occurring in an artificial magnetoelectric heterostructure consisting of a magnetostrictive thin film cemented onto a piezoelectric actuator. Two different modes (sweep-field and sweep-frequency modes) of this technique have been employed to quantitatively probe the indirect magnetoelectri…
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Microstripline ferromagnetic resonance technique has been used to study the indirect magnetoelectric coupling occurring in an artificial magnetoelectric heterostructure consisting of a magnetostrictive thin film cemented onto a piezoelectric actuator. Two different modes (sweep-field and sweep-frequency modes) of this technique have been employed to quantitatively probe the indirect magnetoelectric coupling and to observe a voltage induced magnetization rotation (of 90 degree). This latter has been validated by the experimental frequency variation of the uniform mode and by the amplitude of the sweep-frequency spectra.
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Submitted 12 July, 2015;
originally announced July 2015.
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Interfacial Dzyaloshinskii-Moriya interaction in perpendicularly-magnetized Pt/Co/AlO$_x$ ultrathin films measured by Brillouin light spectroscopy
Authors:
Mohamed Belmeguenai,
Jean-Paul Adam,
Yves Roussigné,
Sylvain Eimer,
Thibaut Devolder,
Joo-Von Kim,
Salim Mourad Cherif,
Andrey Stashkevich,
André Thiaville
Abstract:
Spin waves in perpendicularly-magnetized Pt/Co/AlO$_x$/Pt ultrathin films with varying Co thicknesses (0.6-1.2 nm) have been studied with Brillouin light spectroscopy in the Damon-Eshbach geometry. The measurements reveal a pronounced nonreciprocal propagation, which increases with decreasing Co thicknesses. This nonreciprocity is attributed to an interfacial Dzyaloshinskii-Moriya interaction (DMI…
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Spin waves in perpendicularly-magnetized Pt/Co/AlO$_x$/Pt ultrathin films with varying Co thicknesses (0.6-1.2 nm) have been studied with Brillouin light spectroscopy in the Damon-Eshbach geometry. The measurements reveal a pronounced nonreciprocal propagation, which increases with decreasing Co thicknesses. This nonreciprocity is attributed to an interfacial Dzyaloshinskii-Moriya interaction (DMI), which is significantly stronger than asymmetries resulting from surface anisotropies for such modes. Results are consistent with an interfacial DMI constant $D_s = -1.7 \pm 0.11$ pJ/m, which favors left-handed chiral spin structures. This suggests that such films below 1 nm in thickness should support novel chiral states like skyrmions.
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Submitted 1 March, 2015;
originally announced March 2015.
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Non-reciprocity of spin wave propagation induced by the interface Dzyaloshinskii-Moriya interaction in Py/Pt film structures
Authors:
A. A. Stashkevich,
M. Belmeguenai,
Y. Roussigné,
S. M. Cherif,
M. Kostylev,
M. Gabor,
D. Lacour,
C. Tiusan,
M. Hehn
Abstract:
Results of a comprehensive study by means of Brillouin spectroscopy, complemented by Ferromagnetic Resonance characterization, of spin waves (SW) propagating in Py/Pt bi-layers, characterized by pronounced interface Dzyaloshinskii-Moriya interactions (IDMI) are reported. Non-conventional wave behavior of SW travelling in opposite directions, characterized by non-reciprocity with respect to the inv…
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Results of a comprehensive study by means of Brillouin spectroscopy, complemented by Ferromagnetic Resonance characterization, of spin waves (SW) propagating in Py/Pt bi-layers, characterized by pronounced interface Dzyaloshinskii-Moriya interactions (IDMI) are reported. Non-conventional wave behavior of SW travelling in opposite directions, characterized by non-reciprocity with respect to the inversion of the sign of the SW wave-number, has been revealed. The value of the effective IDMI constant D has been estimated.
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Submitted 6 November, 2014;
originally announced November 2014.
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Combining ferromagnetic resonator and digital image correlation to study the strain induced resonance tunability in magnetoelectric heterostructures
Authors:
Fatih Zighem,
Mohamed Belmeguenai,
Damien Faurie,
Halim Haddadi,
Johan Moulin
Abstract:
This paper reports the development of a methodology combining microstrip ferromagnetic resonance (MS-FMR) and digital image correlation (DIC) in order to silmuteanously measure the voltage-induced strains and the magnetic resonance in artificial magnetoelectric heterostructures (magnetic films/piezoelectric substrate? or magnetic films/flexible substrate/piezoelectric actuator ?). The overall prin…
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This paper reports the development of a methodology combining microstrip ferromagnetic resonance (MS-FMR) and digital image correlation (DIC) in order to silmuteanously measure the voltage-induced strains and the magnetic resonance in artificial magnetoelectric heterostructures (magnetic films/piezoelectric substrate? or magnetic films/flexible substrate/piezoelectric actuator ?). The overall principle of the technique and the related analytical modelling are described. It is powerful to estimate the magnetostriction coefficient of ferromagnetic thin films and can be used to determine the effective magnetoelectric coefficient of the whole heterostructures in addition to the piezoelectric coefficient related to the in-plane voltage-induced strains. This methodology can be applied to system for which the strains are well transmitted at the different interfaces.
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Submitted 23 September, 2014;
originally announced September 2014.
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Micro-strip ferromagnetic resonance study of strain-induced anisotropy in amorphous FeCuNbSiB film on flexible substrate
Authors:
Fatih Zighem,
Anouar El Bahoui,
Johan Moulin,
Damien Faurie,
Mohamed Belmeguenai,
Silvana Mercone,
Halim Haddadi
Abstract:
The magnetic anisotropy of a FeCuNbSiB (Finemet) film deposited on Kapton has been studied by micro-strip ferromagnetic resonance technique. We have shown that the flexibility of the substrate allows a good transmission of elastic strains generated by a piezoelectric actuator. Following the resonance field angular dependence, we also demonstrate the possibility of controlling the magnetic anisotro…
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The magnetic anisotropy of a FeCuNbSiB (Finemet) film deposited on Kapton has been studied by micro-strip ferromagnetic resonance technique. We have shown that the flexibility of the substrate allows a good transmission of elastic strains generated by a piezoelectric actuator. Following the resonance field angular dependence, we also demonstrate the possibility of controlling the magnetic anisotropy of the film by applying relatively small voltages to the actuator. Moreover, a suitable model taking into account the effective elastic strains measured by digital image correlation and the effective elastic coefficients measured by Brillouin light scattering, allowed to deduce the magnetostrictive coefficient. This latter was found to be positive $(λ=16\times10^{-6}$) and consistent with the usually reported values for bulk amorphous FeCuNbSiB.
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Submitted 9 September, 2014;
originally announced September 2014.
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Bending strain-tunable magnetic anisotropy in Co2FeAl Heusler thin film on Kapton
Authors:
M. Gueye,
B. M. Wague,
F. Zighem,
M. Belmeguenai,
M. S. Gabor,
T. Petrisor jr,
C. Tiusan,
S. Mercon,
D. Faurie
Abstract:
Bending effect on the magnetic anisotropy in 20 nm Co$_{2}$FeAl Heusler thin film grown on Kapton\textregistered{} has been studied by ferromagnetic resonance and glued on curved sample carrier with various radii. The results reported in this letter show that the magnetic anisotropy is drastically changed in this system by bending the thin films. This effect is attributed to the interfacial strain…
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Bending effect on the magnetic anisotropy in 20 nm Co$_{2}$FeAl Heusler thin film grown on Kapton\textregistered{} has been studied by ferromagnetic resonance and glued on curved sample carrier with various radii. The results reported in this letter show that the magnetic anisotropy is drastically changed in this system by bending the thin films. This effect is attributed to the interfacial strain transmission from the substrate to the film and to the magnetoelastic behavior of the Co$_{2}$FeAl film. Moreover two approaches to determine the in-plane magnetostriction coefficient of the film, leading to a value that is close to $λ^{CFA}=14\times10^{-6}$, have been proposed.
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Submitted 2 August, 2014;
originally announced August 2014.
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Optimization of indirect magnetoelectric effect in thin-film/substrate/piezoelectric-actuator heterostructure using polymer substrate
Authors:
Mouhamadou Gueye,
Fatih Zighem,
Damien Faurie,
Mohamed Belmeguenai,
Silvana Mercone
Abstract:
Indirect magnetoelectric effect has been studied in magnetostrictive-film/substrate/piezoelectric-actuator heterostructures. Two different substrates have been employed: a flexible substrate (Young's modulus of 4 GPa) and a rigid one (Young's modulus of 180 GPa). A clear optimization of the indirect magnetoelectric coupling, studied by micro-strip ferromagnetic resonance, has been highlighted when…
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Indirect magnetoelectric effect has been studied in magnetostrictive-film/substrate/piezoelectric-actuator heterostructures. Two different substrates have been employed: a flexible substrate (Young's modulus of 4 GPa) and a rigid one (Young's modulus of 180 GPa). A clear optimization of the indirect magnetoelectric coupling, studied by micro-strip ferromagnetic resonance, has been highlighted when using the polymer substrate. However, in contrast to the rigid substrate, the flexible substrate also leads to an a priori undesirable and huge uniaxial anisotropy which seems to be related to a non equibiaxial residual stress inside the magnetostrictive film. The strong amplitude of this non equibiaxiallity is due to the large Young's modulus mismatch between the polymer and the magnetostrictive film which leads to a slight curvature along a given direction during the elaboration process and thus to a large magnetoelastic anisotropy.
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Submitted 1 August, 2014;
originally announced August 2014.
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Magnetic and structural properties of Co2FeAl thin films grown on Si substrate
Authors:
M. Belmeguenai,
H. Tuzcuoglu,
M. S. Gabor,
T. Petrisor jr,
C. Tuisan,
D. Berling,
F. Zighem,
S. M. Chérif
Abstract:
The correlation between magnetic and structural properties of Co_{2} FeAl (CFA) thin films of different thickness (10 nm<d< 100 nm) grown at room temperature on MgO-buffered Si/SiO2 substrates and annealed at 600\lyxmathsym{\textdegree}C has been studied. XRD measurements revealed an (011) out-of-plane texture growth of the films. The deduced lattice parameter increases with the film thickness. Mo…
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The correlation between magnetic and structural properties of Co_{2} FeAl (CFA) thin films of different thickness (10 nm<d< 100 nm) grown at room temperature on MgO-buffered Si/SiO2 substrates and annealed at 600\lyxmathsym{\textdegree}C has been studied. XRD measurements revealed an (011) out-of-plane texture growth of the films. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field measured with an applied field along the easy axis direction and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-palne anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of -1.86 erg/cm2
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Submitted 28 March, 2014;
originally announced March 2014.
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Magnetic domain-wall motion study under an electric field in a Finemet thin film on flexible substrate
Authors:
Ngo Thi Lan,
Silvana Mercone,
Johan Moulin,
Anouar El Bahoui,
Damien Faurie,
Fatih Zighem,
Mohamed Belmeguenai,
Halim Haddadi
Abstract:
Influence of applied in-plane elastic strains on the static magnetic configuration of a 530 nm magnetostrictive FeCuNbSiB thin film. The in-plane strains are induced via the application of a voltage to a piezoelectric actuator on which the film/substrate system was glued. A quantitative characterization of the voltage dependence of the induced-strain at the surface of the film was performed using…
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Influence of applied in-plane elastic strains on the static magnetic configuration of a 530 nm magnetostrictive FeCuNbSiB thin film. The in-plane strains are induced via the application of a voltage to a piezoelectric actuator on which the film/substrate system was glued. A quantitative characterization of the voltage dependence of the induced-strain at the surface of the film was performed using a digital image correlation technique. MFM images at remanence (H=0 Oe and U=0 V) clearly reveal the presence of weak stripe domains. The effect of the voltage-induced strain shows the existence of a threshold value above, which the break of the stripe configuration set in. For a maximum strain of exx~0.5*10-3 we succeed in destabilizing the stripes configuration helping the setting up of a complete homogeneous magnetic pattern.
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Submitted 6 February, 2014;
originally announced February 2014.
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Co2FeAl Heusler thin films grown on Si and MgO substrates: annealing temperature effect
Authors:
M. Belmeguenai,
H. Tuzcuoglu,
M. S. Gabor,
T. Petrisor jr,
C. Tuisan,
F. Zighem,
S. M. Chérif,
P. Moch
Abstract:
10 nm and 50 nm Co$_{2}$FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according to the relation CFA(001)[110]//MgO(001)[100] epitaxial relation), respectively for CFA films grown on a Si and on a MgO substrate. For these later, the chemical…
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10 nm and 50 nm Co$_{2}$FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according to the relation CFA(001)[110]//MgO(001)[100] epitaxial relation), respectively for CFA films grown on a Si and on a MgO substrate. For these later, the chemical order varies from the A2 phase to the B2 phase when increasing the annealing temperature (Ta) while only the A2 disorder type has been observed for CFA grown on Si. Microstrip ferromagnetic resonance (MS-FMR) measurements revealed that the in-plane anisotropy results from the superposition of a uniaxial and of a fourfold symmetry term for CFA grown on MgO substrates. This fourfold anisotropy, which disappears completely for samples grown on Si, is in accord with the crystal structure of the samples. The fourfold anisotropy field decreases when increasing Ta while the uniaxial anisotropy field is nearly unaffected by Ta within the investigated range. The MS-FMR data also allow for concluding that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with $T_{a}$. Finally, the FMR linewidth decreases when increasing Ta, due to the enhancement of the chemical order. We derive a very low intrinsic damping parameter (1.3*10^-3 and 1.1*10^-3 for films of 50 nm thickness annealed at 615 °C grown on MgO and on Si, respectively).
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Submitted 17 January, 2014;
originally announced January 2014.
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Transmission electron microscopy and ferromagnetic resonance investigations of tunnel magnetic junctions using Co2MnGe Heusler alloy as magnetic electrodes
Authors:
M. Belmeguenai,
C. Genevois,
F. Zighem,
Y. Roussigné,
S-M. Chérif,
K. Westerholt,
A. El Bahoui,
A. Fnidiki,
P. Moch
Abstract:
HRTEM, nano-beam electronic diffraction, energy dispersive X-rays scanning spectroscopy, Vibrating Sample Magnetometry (VSM) and FerroMagnetic Resonance (FMR) techniques are used in view of comparing (static and dynamic) magnetic and structural properties of Co2MnGe (13 nm)/Al2O3 (3 nm)/Co (13 nm) tunnel magnetic junctions (TMJ), deposited on various single crystalline substrates (a-plane sapphire…
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HRTEM, nano-beam electronic diffraction, energy dispersive X-rays scanning spectroscopy, Vibrating Sample Magnetometry (VSM) and FerroMagnetic Resonance (FMR) techniques are used in view of comparing (static and dynamic) magnetic and structural properties of Co2MnGe (13 nm)/Al2O3 (3 nm)/Co (13 nm) tunnel magnetic junctions (TMJ), deposited on various single crystalline substrates (a-plane sapphire, MgO(100) and Si(111)). They allow for providing a correlation between these magnetic properties and the fine structure investigated at atomic scale. The Al2O3 tunnel barrier is always amorphous and contains a large concentration of Co atoms, which, however, is significantly reduced when using a sapphire substrate. The Co layer is polycrystalline and shows larger grains for films grown on a sapphire substrate. The VSM investigation reveals in-plane anisotropy only for samples grown on a sapphire substrate. The FMR spectra of the TMJs are compared to the obtained ones with a single Co and Co2MnGe films of identical thickness deposited on a sapphire substrate. As expected, two distinct modes are detected in the TMJs while only one mode is observed in each single film. For the TMJ grown on a sapphire substrate the FMR behavior does not significantly differ from the superposition of the individual spectra of the single films, allowing for concluding that the exchange coupling between the two magnetic layers is too small to give rise to observable shifts. For TMJs grown on a Si or on a MgO substrate the resonance spectra reveal one mode which is nearly identical to the obtained one in the single Co film, while the other observed resonance shows a considerably smaller intensity and cannot be described using the magnetic parameters appropriate to the single Co2MnGe film.
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Submitted 21 November, 2013;
originally announced November 2013.
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Voltage-induced strain control of the magnetic anisotropy in a Ni thin film on flexible substrate
Authors:
Fatih Zighem,
Damien Faurie,
Silvana Mercone,
Mohamed Belmeguenai,
Halim Haddadi
Abstract:
Voltage-induced magnetic anisotropy has been quantitatively studied in polycrystalline Ni thin film deposited on flexible substrate using microstrip ferromagnetic resonance. This anisotropy is induced by a piezoelectric actuator on which the film/substrate system was glued. In our work, the control of the anisotropy through the applied elastic strains is facilitated by the compliant elastic behavi…
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Voltage-induced magnetic anisotropy has been quantitatively studied in polycrystalline Ni thin film deposited on flexible substrate using microstrip ferromagnetic resonance. This anisotropy is induced by a piezoelectric actuator on which the film/substrate system was glued. In our work, the control of the anisotropy through the applied elastic strains is facilitated by the compliant elastic behavior of the substrate. The in-plane strains in the film induced by the piezoelectric actuation have been measured by the digital image correlation technique. Non-linear variation of the resonance field as function of the applied voltage is found and well reproduced by taking into account the non linear and hysteretic variations of the induced in-plane strains as function of the applied voltage. Moreover, we show that initial uniaxial anisotropy attributed to compliant substrate curvature is fully compensated by the voltage induced anisotropy.
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Submitted 5 September, 2013;
originally announced September 2013.
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Co2 FeAl thin films grown on MgO substrates: Correlation between static, dynamic and structural properties
Authors:
M. Belmeguenai,
H. Tuzcuoglu,
M. S. Gabor,
T. Petrisor jr,
C. Tiusan,
D. Berling,
F. Zighem,
T. Chauveau,
S. M. Chérif,
P. Moch
Abstract:
Co2FeAl (CFA) thin films with thickness varying from 10 nm to 115 nm have been deposited on MgO(001) substrates by magnetron sputtering and then capped by Ta or Cr layer. X-rays diffraction (XRD) revealed that the cubic $[001]$ CFA axis is normal to the substrate and that all the CFA films exhibit full epitaxial growth. The chemical order varies from the $B2$ phase to the $A2$ phase when decreasin…
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Co2FeAl (CFA) thin films with thickness varying from 10 nm to 115 nm have been deposited on MgO(001) substrates by magnetron sputtering and then capped by Ta or Cr layer. X-rays diffraction (XRD) revealed that the cubic $[001]$ CFA axis is normal to the substrate and that all the CFA films exhibit full epitaxial growth. The chemical order varies from the $B2$ phase to the $A2$ phase when decreasing the thickness. Magneto-optical Kerr effect (MOKE) and vibrating sample magnetometer measurements show that, depending on the field orientation, one or two-step switchings occur. Moreover, the films present a quadratic MOKE signal increasing with the CFA thickness, due to the increasing chemical order. Ferromagnetic resonance, MOKE transverse bias initial inverse susceptibility and torque (TBIIST) measurements reveal that the in-plane anisotropy results from the superposition of a uniaxial and of a fourfold symmetry term. The fourfold anisotropy is in accord with the crystal structure of the samples and is correlated to the biaxial strain and to the chemical order present in the films. In addition, a large negative perpendicular uniaxial anisotropy is observed. Frequency and angular dependences of the FMR linewidth show two magnon scattering and mosaicity contributions, which depend on the CFA thickness. A Gilbert damping coefficient as low as 0.0011 is found.
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Submitted 3 May, 2013;
originally announced May 2013.
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Magnetization dynamics in Co2$MnGe/Al2$O3$/Co tunnel junctions grown on different substrates
Authors:
M. Belmeguenai,
H. Tuzcuoglu,
F. Zighem,
S-M. Chérif,
Y. Roussigné,
P. Moch,
K. Westerholt,
A. El Bahoui,
C. Genevois,
A. Fnidiki
Abstract:
We study static and dynamic magnetic properties of Co2MnGe (13 nm)/Al2O3 (3 nm)/Co (13 nm) tunnel magnetic junctions (TMJ), deposited on various single crystalline substrates (a-plane sapphire, MgO(100), Si(111)). The results are compared to the magnetic properties of Co and of Co$_{2}$MnGe single films lying on sapphire substrates. X-rays diffraction always shows a (110) orientation of the Co…
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We study static and dynamic magnetic properties of Co2MnGe (13 nm)/Al2O3 (3 nm)/Co (13 nm) tunnel magnetic junctions (TMJ), deposited on various single crystalline substrates (a-plane sapphire, MgO(100), Si(111)). The results are compared to the magnetic properties of Co and of Co$_{2}$MnGe single films lying on sapphire substrates. X-rays diffraction always shows a (110) orientation of the Co$_{2}$MnGe films. Structural observations obtained by high resolution transmission electron microscopy confirmed the high quality of the TMJ grown on sapphire. Our vibrating sample magnetometry measurements reveal in-plane anisotropy only in samples grown on a sapphire substrate. Depending on the substrate, the ferromagnetic resonance spectra of the TMJs, studied by the microstrip technique, show one or two pseudo-uniform modes. In the case of MgO and of Si substrates only one mode is observed: it is described by magnetic parameters (g-factor, effective magnetization, in-plane magnetic anisotropy) derived in the frame of a simple expression of the magnetic energy density; these parameters are practically identical to those obtained for the Co single film. With a sapphire substrate two modes are present: one of them does not appreciably differ from the observed mode in the Co single film while the other one is similar to the mode appearing in the Co$_{2}$MnGe single film: their magnetic parameters can thus be determined independently, using a classical model for the energy density in the absence of interlayer exchange coupling.
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Submitted 28 January, 2013;
originally announced January 2013.
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Structural and magnetic properties of Co2MnSi thin films
Authors:
Mohamed Belmeguenai,
Fatih Zighem,
Damien Faurie,
Salim Mourad Chérif,
Philippe Moch,
Kurt Westerholt,
Wilfrid Seiler
Abstract:
Co2MnSi (CMS) films of different thicknesses (20, 50 and 100 nm) were grown by radio frequency (RF) sputtering on a-plane sapphire substrates. Our X-rays diffraction study shows that, in all the samples, the cubic <110> CSM axis is normal to the substrate and that there exist well defined preferential in-plane orientations. Static and dynamic magnetic properties were investigated using vibrating s…
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Co2MnSi (CMS) films of different thicknesses (20, 50 and 100 nm) were grown by radio frequency (RF) sputtering on a-plane sapphire substrates. Our X-rays diffraction study shows that, in all the samples, the cubic <110> CSM axis is normal to the substrate and that there exist well defined preferential in-plane orientations. Static and dynamic magnetic properties were investigated using vibrating sample magnetometry (VSM) and micro-strip line ferromagnetic resonance (MS-FMR), respectively. From the resonance measurements versus the direction and the amplitude of an applied magnetic field we derive most of the magnetic parameters: magnetization, gyromagnetic factor, exchange stiffness coefficient and magnetic anisotropy terms. The in-plane anisotropy can be described as resulting from the superposition of two terms showing a two-fold and a four-fold symmetry without necessarily identical principal axes. The observed behavior of the hysteresis loops is in agreement with this complex form of the in-plane anisotropy
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Submitted 17 February, 2011; v1 submitted 17 December, 2010;
originally announced December 2010.
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Structural, static and dynamic magnetic properties of CoMnGe thin films on a sapphire a-plane substrate
Authors:
Mohamed Belmeguenai,
Fatih Zighem,
Thierry Chauveau,
Damien Faurie,
Yves Roussigné,
Salim Mourad Chérif,
Philippe Moch,
Kurt Westerholt,
Philippe Monod
Abstract:
Magnetic properties of CoMnGe thin films of different thicknesses (13, 34, 55, 83, 100 and 200 nm), grown by RF sputtering at 400°C on single crystal sapphire substrates, were studied using vibrating sample magnetometry (VSM) and conventional or micro-strip line (MS) ferromagnetic resonance (FMR). Their behavior is described assuming a magnetic energy density showing twofold and fourfold in-plane…
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Magnetic properties of CoMnGe thin films of different thicknesses (13, 34, 55, 83, 100 and 200 nm), grown by RF sputtering at 400°C on single crystal sapphire substrates, were studied using vibrating sample magnetometry (VSM) and conventional or micro-strip line (MS) ferromagnetic resonance (FMR). Their behavior is described assuming a magnetic energy density showing twofold and fourfold in-plane anisotropies with some misalignment between their principal directions. For all the samples, the easy axis of the fourfold anisotropy is parallel to the c-axis of the substrate while the direction of the twofold anisotropy easy axis varies from sample to sample and seems to be strongly influenced by the growth conditions. Its direction is most probably monitored by the slight unavoidable angle of miscut the Al2O3 substrate. The twofold in-plane anisotropy field is almost temperature independent, in contrast with the fourfold field which is a decreasing function of the temperature. Finally, we study the frequency dependence of the observed line-width of the resonant mode and we conclude to a typical Gilbert damping constant of 0.0065 for the 55-nm-thick film.
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Submitted 25 August, 2010; v1 submitted 25 May, 2010;
originally announced May 2010.
