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Fast current-induced skyrmion motion in synthetic antiferromagnets
Authors:
Van Tuong Pham,
Naveen Sisodia,
Ilaria Di Manici,
Joseba Urrestarazu-Larrañaga,
Kaushik Bairagi,
Johan Pelloux-Prayer,
Rodrigo Guedas,
Liliana Buda-Prejbeanu,
Stéphane Auffret,
Andrea Locatelli,
Tevfik Onur Menteş,
Stefania Pizzini,
Pawan Kumar,
Aurore Finco,
Vincent Jacques,
Gilles Gaudin,
Olivier Boulle
Abstract:
Magnetic skyrmions are topological magnetic textures that hold great promise as nanoscale bits of information in memory and logic devices. Although room-temperature ferromagnetic skyrmions and their current-induced manipulation have been demonstrated, their velocity has been limited to about 100 meters per second. In addition, their dynamics are perturbed by the skyrmion Hall effect, a motion tran…
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Magnetic skyrmions are topological magnetic textures that hold great promise as nanoscale bits of information in memory and logic devices. Although room-temperature ferromagnetic skyrmions and their current-induced manipulation have been demonstrated, their velocity has been limited to about 100 meters per second. In addition, their dynamics are perturbed by the skyrmion Hall effect, a motion transverse to the current direction caused by the skyrmion topological charge. Here, we show that skyrmions in compensated synthetic antiferromagnets can be moved by current along the current direction at velocities of up to 900 meters per second. This can be explained by the cancellation of the net topological charge leading to a vanishing skyrmion Hall effect. Our results open an important path toward the realization of logic and memory devices based on the fast manipulation of skyrmions in tracks.
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Submitted 19 April, 2024;
originally announced April 2024.
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Electrical detection and nucleation of a magnetic skyrmion in a magnetic tunnel junction observed via operando magnetic microscopy
Authors:
by J. Urrestarazu Larrañaga,
Naveen Sisodia,
Van Tuong Pham,
Ilaria Di Manici,
Aurélien Masseboeuf,
Kevin Garello,
Florian Disdier,
Bruno Fernandez,
Sebastian Wintz,
Markus Weigand,
Mohamed Belmeguenai,
Stefania Pizzini,
Ricardo Sousa,
Liliana Buda-Prejbeanu,
Gilles Gaudin,
Olivier Boulle
Abstract:
Magnetic skyrmions are topological spin textures which are envisioned as nanometre scale information carriers in magnetic memory and logic devices. The recent demonstration of room temperature stabilization of skyrmions and their current induced manipulation in industry compatible ultrathin films were first steps towards the realisation of such devices. However, important challenges remain regardi…
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Magnetic skyrmions are topological spin textures which are envisioned as nanometre scale information carriers in magnetic memory and logic devices. The recent demonstration of room temperature stabilization of skyrmions and their current induced manipulation in industry compatible ultrathin films were first steps towards the realisation of such devices. However, important challenges remain regarding the electrical detection and the low-power nucleation of skyrmions, which are required for the read and write operations. Here, we demonstrate, using operando magnetic microscopy experiments, the electrical detection of a single magnetic skyrmion in a magnetic tunnel junction (MTJ) and its nucleation and annihilation by gate voltage via voltage control of magnetic anisotropy. The nucleated skyrmion can be further manipulated by both gate voltage and external magnetic field, leading to tunable intermediate resistance states. Our results unambiguously demonstrate the readout and voltage controlled write operations in a single MTJ device, which is a major milestone for low power skyrmion based technologies.
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Submitted 1 August, 2023;
originally announced August 2023.
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Robust and programmable logic-in-memory devices exploiting skyrmion confinement and channeling using local energy barriers
Authors:
Naveen Sisodia,
Johan Pelloux-Prayer,
Liliana D. Buda-Prejbeanu,
Lorena Anghel,
Gilles Gaudin,
Olivier Boulle
Abstract:
Magnetic skyrmions are promising candidates for logic-in-memory applications, intrinsically merging high density non-volatile data storage with computing capabilities, owing to their nanoscale size, fast motion, and mutual repulsions. However, concepts proposed so far suffer from reliability issues as well as inefficient conversion of magnetic information to electrical signals. In this paper, we p…
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Magnetic skyrmions are promising candidates for logic-in-memory applications, intrinsically merging high density non-volatile data storage with computing capabilities, owing to their nanoscale size, fast motion, and mutual repulsions. However, concepts proposed so far suffer from reliability issues as well as inefficient conversion of magnetic information to electrical signals. In this paper, we propose a logic-in-memory device which exploits skyrmion confinement and channeling using anisotropy energy barriers to achieve reliable data storage and synchronous shift in racetracks combined with cascadable and reprogrammable logics relying purely on magnetic interactions. The device combines a racetrack shift register based on skyrmions confined in nanodots with Full Adder (FA) gates. The designed FA is reprogrammable and cascadable and can also be used to perform simple logic operations such as AND, OR, NOT, NAND, XOR and NXOR. The monolithic design of the logic gate and the absence of any complex electrical contacts makes the device ideal for integration with conventional CMOS circuitry.
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Submitted 17 May, 2022;
originally announced May 2022.
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Programmable skyrmion logic gates based on skyrmion tunneling
Authors:
Naveen Sisodia,
Johan Pelloux-Prayer,
Liliana D. Buda-Prejbeanu,
Lorena Anghel,
Gilles Gaudin,
Olivier Boulle
Abstract:
Magnetic skyrmions are promising candidates as elementary nanoscale bits in logic-in-memory devices, intrinsically merging high density memory and computing capabilities. Here we exploit the dynamics of skyrmions interacting with anisotropy energy barriers patterned by ion irradiation to design programmable logic gates. Using micromagnetic simulations with experimental parameters, we show that a f…
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Magnetic skyrmions are promising candidates as elementary nanoscale bits in logic-in-memory devices, intrinsically merging high density memory and computing capabilities. Here we exploit the dynamics of skyrmions interacting with anisotropy energy barriers patterned by ion irradiation to design programmable logic gates. Using micromagnetic simulations with experimental parameters, we show that a fine tuning of the barrier height and width allows the selective tunneling of skyrmions between parallel nanotracks triggered by skyrmion-skyrmion interaction. This can be leveraged to design skyrmion De-multiplexer (DMux) logic gate which works solely using skyrmions as logic inputs. By cascading and connecting demultiplexer gates with a specific topology, we develop a fully programmable logic gate capable of producing any possible logic output as a sum of all minterms generated by a given set of inputs without requiring any complex additional electric/magnetic interconversion. The proposed design is fully conservative and cascadable and paves a new pathway for full skyrmionic-based logic-in-memory devices.
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Submitted 17 May, 2022;
originally announced May 2022.
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Gate-controlled skyrmion and domain wall chirality
Authors:
Charles-Elie Fillion,
Johanna Fischer,
Raj Kumar,
Aymen Fassatoui,
Stefania Pizzini,
Laurent Ranno,
Djoudi Ourdani,
Mohamed Belmeguenai,
Yves Roussigné,
Salim-Mourad Chérif,
Stéphane Auffret,
Isabelle Joumard,
Olivier Boulle,
Gilles Gaudin,
Liliana Buda-Prejbeanu,
Claire Baraduc,
Hélène Béa
Abstract:
Magnetic skyrmions are localized chiral spin textures, which offer great promise to store and process information at the nanoscale. In the presence of asymmetric exchange interactions, their chirality, which governs their dynamics, is generally considered as an intrinsic parameter set during the sample deposition. In this work, we experimentally demonstrate that a gate voltage can control this key…
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Magnetic skyrmions are localized chiral spin textures, which offer great promise to store and process information at the nanoscale. In the presence of asymmetric exchange interactions, their chirality, which governs their dynamics, is generally considered as an intrinsic parameter set during the sample deposition. In this work, we experimentally demonstrate that a gate voltage can control this key parameter. We probe the chirality of skyrmions and chiral domain walls by observing the direction of their current-induced motion and show that a gate voltage can reverse it. This local and dynamical reversal of the chirality is due to a sign inversion of the interfacial Dzyaloshinskii-Moriya interaction that we attribute to ionic migration of oxygen under gate voltage. Micromagnetic simulations show that the chirality reversal is a continuous transformation, in which the skyrmion is conserved. This control of chirality with 2 - 3 V gate voltage can be used for skyrmion-based logic devices, yielding new functionalities.
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Submitted 7 September, 2022; v1 submitted 8 April, 2022;
originally announced April 2022.
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Effect of Chiral Damping on the dynamics of chiral domain walls and skyrmions
Authors:
C. K. Safeer,
Mohamed-Ali Nsibi,
Jayshankar Nath,
Mihai Sebastian Gabor,
Haozhe Yang,
Isabelle Joumard,
Stephane Auffret,
Gilles Gaudin,
Ioan-Mihai Miron
Abstract:
Friction plays an essential role in most physical processes that we experience in our everyday life. Examples range from our ability to walk or swim, to setting boundaries of speed and fuel efficiency of moving vehicles. In magnetic systems, the displacement of chiral domain walls (DW) and skyrmions (SK) by Spin Orbit Torques (SOT), is also prone to friction. Chiral damping, the dissipative counte…
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Friction plays an essential role in most physical processes that we experience in our everyday life. Examples range from our ability to walk or swim, to setting boundaries of speed and fuel efficiency of moving vehicles. In magnetic systems, the displacement of chiral domain walls (DW) and skyrmions (SK) by Spin Orbit Torques (SOT), is also prone to friction. Chiral damping, the dissipative counterpart of the Dzyaloshinskii Moriya Interaction (DMI), plays a central role in these dynamics. Despite experimental observation, and numerous theoretical studies confirming its existence, the influence of chiral damping on DW and SK dynamics has remained elusive due to the difficulty of discriminating from DMI. Here we unveil the effect that chiral damping has on the flow motion of DWs and SKs driven by current and magnetic field. We use a static in-plane field to lift the chiral degeneracy. As the in-plane field is increased, the chiral asymmetry changes sign. When considered separately, neither DMI nor chiral damping can explain the sign reversal of the asymmetry, which we prove to be the result of their competing effects. Finally, numerical modelling unveils the non-linear nature of chiral dissipation and its critical role for the stabilization of moving SKs.
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Submitted 25 January, 2022;
originally announced January 2022.
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Mechanism of Spin-Orbit Torques in Platinum Oxide Systems
Authors:
Jayshankar Nath,
Alexandru Vladimir Trifu,
Mihai Sebastian Gabor,
Ali Hallal,
Stephane Auffret,
Sebastien Labau,
Aymen Mahjoub,
Edmond Chan,
Avinash Kumar Chaurasiya,
Amrit Kumar Mondal,
Haozhe Yang,
Eva Schmoranzerova,
Mohamed Ali Nsibi,
Isabelle Joumard,
Anjan Barman,
Bernard Pelissier,
Mairbek Chshiev,
Gilles Gaudin,
Ioan Mihai Miron
Abstract:
Spin-Orbit Torque (SOT) Magnetic Random-Access Memories (MRAM) have shown promising results towards the realization of fast, non-volatile memory systems. Oxidation of the heavy-metal (HM) layer of the SOT-MRAM has been proposed as a method to increase its energy efficiency. But the results are widely divergent due to the difficulty in controlling the HM oxidation because of its low enthalpy of for…
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Spin-Orbit Torque (SOT) Magnetic Random-Access Memories (MRAM) have shown promising results towards the realization of fast, non-volatile memory systems. Oxidation of the heavy-metal (HM) layer of the SOT-MRAM has been proposed as a method to increase its energy efficiency. But the results are widely divergent due to the difficulty in controlling the HM oxidation because of its low enthalpy of formation. Here, we reconcile these differences by performing a gradual oxidation procedure, which allows correlating the chemical structure to the physical properties of the stack. As an HM layer, we chose Pt because of the strong SOT and the low enthalpy of formation of its oxides. We find evidence of an oxide inversion layer at the FM/HM interface: the oxygen is drawn into the FM, while the HM remains metallic near the interface. We further demonstrate that the oxygen migrates in the volume of the FM layer rather than being concentrated at the interface. Consequently, we find that the intrinsic magnitude of the SOT is unchanged compared to the fully metallic structure. The previously reported apparent increase of SOTs is not intrinsic to platinum oxide and instead arises from systemic changes produced by oxidation.
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Submitted 13 December, 2021;
originally announced December 2021.
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Skyrmions in synthetic antiferromagnets and their nucleation via electrical current and ultrafast laser illumination
Authors:
Roméo Juge,
Naveen Sisodia,
Joseba Urrestarazu Larrañaga,
Qiang Zhang,
Van Tuong Pham,
Kumari Gaurav Rana,
Brice Sarpi,
Nicolas Mille,
Stefan Stanescu,
Rachid Belkhou,
Mohamad-Assaad Mawass,
Nina Novakovic-Marinkovic,
Florian Kronast,
Markus Weigand,
Joachim Gräfe,
Sebastian Wintz,
Simone Finizio,
Jörg Raabe,
Lucia Aballe,
Michael Foerster,
Mohamed Belmeguenai,
Liliana Buda-Prejbeanu,
Justin M. Shaw,
Hans T. Nembach,
Laurent Ranno
, et al. (2 additional authors not shown)
Abstract:
Magnetic skyrmions are topological spin textures that hold great promise as nanoscale information carriers in non-volatile memory and logic devices. While room-temperature magnetic skyrmions and their current-induced manipulation were recently demonstrated, the stray field resulting from their finite magnetization as well as their topological charge limit their minimum size and reliable motion in…
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Magnetic skyrmions are topological spin textures that hold great promise as nanoscale information carriers in non-volatile memory and logic devices. While room-temperature magnetic skyrmions and their current-induced manipulation were recently demonstrated, the stray field resulting from their finite magnetization as well as their topological charge limit their minimum size and reliable motion in tracks. Antiferromagnetic (AF) skyrmions allow these limitations to be lifted owing to their vanishing magnetization and net zero topological charge, promising room-temperature, ultrasmall skyrmions, fast dynamics, and insensitivity to external magnetic fields. While room-temperature AF spin textures have been recently demonstrated, the observation and controlled nucleation of AF skyrmions operable at room temperature in industry-compatible synthetic antiferromagnetic (SAF) material systems is still lacking. Here we demonstrate that isolated skyrmions can be stabilized at zero field and room temperature in a fully compensated SAF. Using X-ray microscopy techniques, we are able to observe the skyrmions in the different SAF layers and demonstrate their antiparallel alignment. The results are substantiated by micromagnetic simulations and analytical models using experimental parameters, which confirm the chiral SAF skyrmion spin texture and allow the identification of the physical mechanisms that control the SAF skyrmion size and stability. We also demonstrate the local nucleation of SAF skyrmions via local current injection as well as ultrafast laser excitations at zero field. These results will enable the utilization of SAF skyrmions in skyrmion-based devices.
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Submitted 23 November, 2021;
originally announced November 2021.
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Imprint from ferromagnetic skyrmions in an antiferromagnet via exchange bias
Authors:
Kumari Gaurav Rana,
Rafael Lopes Seeger,
Sandra Ruiz-Gómez,
Roméo Juge,
Qiang Zhang,
Kaushik Bairagi,
Van Tuong Pham,
Mohamed Belmeguenai,
Stéphane Auffret,
Michael Foerster,
Lucia Aballe,
Gilles Gaudin,
Vincent Baltz,
Olivier Boulle
Abstract:
Magnetic skyrmions are topological spin textures holding great potential as nanoscale information carriers. Recently, skyrmions have been predicted in antiferromagnets, with key advantages in terms of stability, size, and dynamical properties over their ferromagnetic analogs. However, their experimental demonstration is still lacking. Here, we show the imprint from ferromagnetic skyrmions into a t…
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Magnetic skyrmions are topological spin textures holding great potential as nanoscale information carriers. Recently, skyrmions have been predicted in antiferromagnets, with key advantages in terms of stability, size, and dynamical properties over their ferromagnetic analogs. However, their experimental demonstration is still lacking. Here, we show the imprint from ferromagnetic skyrmions into a thin film of an IrMn antiferromagnet, at room temperature and zero external magnetic field, using exchange-bias. Using high-spatial-resolution x-ray magnetic circular dichroism photoemission electron microscopy (XMCD-PEEM), we observed the imprinted spin textures within the IrMn from the XMCD signal of the uncompensated Mn spins at the interface with the ferromagnet. This result opens up a path for logic and memory devices based on skyrmion manipulation in antiferromagnets.
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Submitted 24 November, 2021; v1 submitted 30 September, 2020;
originally announced September 2020.
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Room temperature skyrmions at zero field in exchange-biased ultrathin films
Authors:
K. Gaurav Rana,
A. Finco,
F. Fabre,
S. Chouaieb,
A. Haykal,
L. D. Buda-Prejbeanu,
O. Fruchart,
S. Le Denmat,
P. David,
M. Belmeguenai,
T. Denneulin,
R. E. Dunin-Borkowski,
G. Gaudin,
V. Jacques,
O. Boulle
Abstract:
We demonstrate that magnetic skyrmions with a mean diameter around 60 nm can be stabilized at room temperature and zero external magnetic field in an exchange-biased Pt/Co/NiFe/IrMn multilayer stack. This is achieved through an advanced optimization of the multilayer stack composition in order to balance the different magnetic energies controlling the skyrmion size and stability. Magnetic imaging…
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We demonstrate that magnetic skyrmions with a mean diameter around 60 nm can be stabilized at room temperature and zero external magnetic field in an exchange-biased Pt/Co/NiFe/IrMn multilayer stack. This is achieved through an advanced optimization of the multilayer stack composition in order to balance the different magnetic energies controlling the skyrmion size and stability. Magnetic imaging is performed both with magnetic force microscopy and scanning Nitrogen-Vacancy magnetometry, the latter providing unambiguous measurements at zero external magnetic field. In such samples, we show that exchange bias provides an immunity of the skyrmion spin texture to moderate external magnetic field, in the tens of mT range, which is an important feature for applications as memory devices. These results establish exchange-biased multilayer stacks as a promising platform towards the effective realization of memory and logic devices based on magnetic skyrmions.
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Submitted 28 January, 2020; v1 submitted 3 January, 2020;
originally announced January 2020.
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Current-Driven Skyrmion Dynamics and Drive-Dependent Skyrmion Hall Effect in an Ultrathin Film
Authors:
Roméo Juge,
Soong-Geun Je,
Dayane de Souza Chaves,
Liliana D. Buda-Prejbeanu,
José Peña-Garcia,
Jayshankar Nath,
Ioan Mihai Miron,
Kumari Gaurav Rana,
Lucia Aballe,
Michael Foerster,
Francesca Genuzio,
Tevfik Onur Menteş,
Andrea Locatelli,
Francesco Maccherozzi,
Sarnjeet S. Dhesi,
Mohamed Belmeguenai,
Yves Roussigné,
Stéphane Auffret,
Stefania Pizzini,
Gilles Gaudin,
Jan Vogel,
Olivier Boulle
Abstract:
Magnetic skyrmions are chiral spin textures that hold great promise as nanoscale information carriers. Since their first observation at room temperature, progress has been made in their current-induced manipulation, with fast motion reported in stray-field-coupled multilayers. However, the complex spin textures with hybrid chiralities and large power dissipation in these multilayers limit their pr…
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Magnetic skyrmions are chiral spin textures that hold great promise as nanoscale information carriers. Since their first observation at room temperature, progress has been made in their current-induced manipulation, with fast motion reported in stray-field-coupled multilayers. However, the complex spin textures with hybrid chiralities and large power dissipation in these multilayers limit their practical implementation and the fundamental understanding of their dynamics. Here, we report on the current-driven motion of Néel skyrmions with diameters in the 100-nm range in an ultrathin Pt/Co/MgO trilayer. We find that these skyrmions can be driven at a speed of 100 m/s and exhibit a drive-dependent skyrmion Hall effect, which is accounted for by the effect of pinning. Our experiments are well substantiated by an analytical model of the skyrmion dynamics as well as by micromagnetic simulations including material inhomogeneities. This good agreement is enabled by the simple skyrmion spin structure in our system and a thorough characterization of its static and dynamical properties.
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Submitted 9 October, 2019; v1 submitted 17 April, 2019;
originally announced April 2019.
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Creation of Magnetic Skyrmion Bubble Lattices by Ultrafast Laser in Ultrathin Films
Authors:
Soong-Geun Je,
Pierre Vallobra,
Titiksha Srivastava,
Juan-Carlos Rojas-Sánchez,
Thai Ha Pham,
Michel Hehn,
Gregory Malinowski,
Claire Baraduc,
Stéphane Auffret,
Gilles Gaudin,
Stéphane Mangin,
Hélène Béa,
Olivier Boulle
Abstract:
Magnetic skyrmions are topologically nontrivial spin textures which hold great promise as stable information carriers in spintronic devices at the nanoscale. One of the major challenges for developing novel skyrmion-based memory and logic devices is fast and controlled creation of magnetic skyrmions at ambient conditions. Here we demonstrate the single ultrafast (35-fs) laser pulse-induced generat…
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Magnetic skyrmions are topologically nontrivial spin textures which hold great promise as stable information carriers in spintronic devices at the nanoscale. One of the major challenges for developing novel skyrmion-based memory and logic devices is fast and controlled creation of magnetic skyrmions at ambient conditions. Here we demonstrate the single ultrafast (35-fs) laser pulse-induced generation of skyrmion bubbles and skyrmion bubble lattices from a ferromagnetic state in sputtered ultrathin magnetic films at room temperature. The skyrmion bubble density increases with the laser fluence in a controlled way, and it finally becomes saturated, forming disordered hexagonal lattices. Moreover, we present that the skyrmion bubble lattice configuration leads to enhanced topological stability as compared to isolated skyrmions, suggesting its promising use in data storage. Our findings shed light on the optical approach to the skyrmion bubble lattice in commonly accessible materials, paving the road toward the emerging skyrmion-based memory and synaptic devices.
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Submitted 10 September, 2018; v1 submitted 3 August, 2018;
originally announced August 2018.
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Large voltage tuning of Dzyaloshinskii-Moriya Interaction: a route towards dynamic control of skyrmion chirality
Authors:
Titiksha Srivastava,
Marine Schott,
Roméo Juge,
Viola Křižáková,
Mohamed Belmeguenai,
Yves Soussigné,
Anne Bernand-Mantel,
Laurent Ranno,
Stefania Pizzini,
Salim-Mourad Chérif,
Andrey Stashkevich,
Stéphane Auffret,
Olivier Boulle,
Gilles Gaudin,
Mair Chshiev,
Claire Baraduc,
Hélène Béa
Abstract:
Electric control of magnetism is a prerequisite for efficient and low power spintronic devices. More specifically, in heavy metal/ ferromagnet/ insulator heterostructures, voltage gating has been shown to locally and dynamically tune magnetic properties like interface anisotropy and saturation magnetization. However, its effect on interfacial Dzyaloshinskii-Moriya Interaction (DMI), which is cruci…
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Electric control of magnetism is a prerequisite for efficient and low power spintronic devices. More specifically, in heavy metal/ ferromagnet/ insulator heterostructures, voltage gating has been shown to locally and dynamically tune magnetic properties like interface anisotropy and saturation magnetization. However, its effect on interfacial Dzyaloshinskii-Moriya Interaction (DMI), which is crucial for the stability of magnetic skyrmions, has been challenging to achieve and has not been reported yet for ultrathin films. Here, we demonstrate 130% variation of DMI with electric field in Ta/FeCoB/TaOx trilayers through Brillouin Light Spectroscopy (BLS). Using polar- Magneto-Optical-Kerr-Effect microscopy, we further show a monotonic variation of DMI and skyrmionic bubble size with electric field, with an unprecedented efficiency. We anticipate through our observations that a sign reversal of DMI with electric field is possible, leading to a chirality switch. This dynamic manipulation of DMI establishes an additional degree of control to engineer programmable skyrmion based memory or logic devices.
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Submitted 26 June, 2018; v1 submitted 26 April, 2018;
originally announced April 2018.
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Thermal contribution to the spin-orbit torque in metallic/ferrimagnetic systems
Authors:
Thai Ha Pham,
Soong-Geun Je,
Pierre Vallobra,
Thibaud Fache,
Daniel Lacour,
Gregory Malinowski,
Marie-Claire Cyrille,
Gilles Gaudin,
Olivier Boulle,
Michel Hehn,
Juan-Carlos Rojas-Sánchez,
Stéphane Mangin
Abstract:
We report a systematic study of current-induced perpendicular magnetization switching in W/Co$_{x}$Tb$_{1-x}$/Al thin films with strong perpendicular magnetic anisotropy. Various Co$_{x}$Tb$_{1-x}$ ferrimagnetic alloys with different magnetic compensation temperatures are presented. The systems are characterized using MOKE, SQUID and anomalous Hall resistance at different cryostat temperature rang…
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We report a systematic study of current-induced perpendicular magnetization switching in W/Co$_{x}$Tb$_{1-x}$/Al thin films with strong perpendicular magnetic anisotropy. Various Co$_{x}$Tb$_{1-x}$ ferrimagnetic alloys with different magnetic compensation temperatures are presented. The systems are characterized using MOKE, SQUID and anomalous Hall resistance at different cryostat temperature ranging from 10 K to 350 K. The current-switching experiments are performed in the spin-orbit torque geometry where the current pulses are injected in plane and the magnetization reversal is detected by measuring the Hall resistance. The full reversal magnetization has been observed in all samples. Some experimental results could only be explained by the strong sample heating effect during the current pulses injection. We have found that, for a given composition $x$ and switching polarity, the devices always reach the same temperature $\textit{T}_{switch}(x)$ before switching independently of the cryostat temperature. $\textit{T}_{switch}$ seems to scale with the Curie temperature of the Co$_{x}$Tb$_{1-x}$ ferrimagnetic alloys. This explains the evolution of the critical current (and critical current density) as a function of the alloy concentration. Future application could take advantages of this heating effect which allows reducing the in-plane external field. Unexpected double magnetization switching has been observed when the heat generated by the current allows crosses the compensation temperature.
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Submitted 29 November, 2017;
originally announced November 2017.
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Magnetic skyrmions in confined geometries : effect of the magnetic field and the disorder
Authors:
Roméo Juge,
Soong-Geun Je,
Dayane de Souza Chaves,
Stefania Pizzini,
Liliana D. Buda-Prejbeanu,
Lucia Aballe,
Michael Foerster,
Andrea Locatelli,
Tevfik Onur Menteş,
Alessandro Sala,
Francesco Maccherozzi,
Sarnjeet S. Dhesi,
Stéphane Auffret,
Gilles Gaudin,
Jan Vogel,
Olivier Boulle
Abstract:
We report on the effect of the lateral confinement and a perpendicular magnetic field on isolated room-temperature magnetic skyrmions in sputtered Pt/Co/MgO nanotracks and nanodots. We show that the skyrmions size can be easily tuned by playing on the lateral dimensions of the nanostructures and by using external magnetic field amplitudes of a few mT, which allow to reach sub-100 nm diameters. Our…
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We report on the effect of the lateral confinement and a perpendicular magnetic field on isolated room-temperature magnetic skyrmions in sputtered Pt/Co/MgO nanotracks and nanodots. We show that the skyrmions size can be easily tuned by playing on the lateral dimensions of the nanostructures and by using external magnetic field amplitudes of a few mT, which allow to reach sub-100 nm diameters. Our XMCD-PEEM observations also highlight the important role of the pinning on the skyrmions size and stability under an out-of-plane magnetic field. Micromagnetic simulations reveal that the effect of local pinning can be well accounted for by considering the thin film grain structure with local anisotropy variations and reproduce well the dependence of the skyrmion diameter on the magnetic field and the geometry.
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Submitted 13 June, 2017; v1 submitted 6 June, 2017;
originally announced June 2017.
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Excitation and detection of short-waved spin waves in ultrathin Ta/CoFeB/MgO-layer system suitable for spin-orbit-torque magnonics
Authors:
T. Brächer,
T. Meyer,
T. Fischer,
M. Fabre,
O. Boulle,
U. Ebels,
P. Pirro,
G. Gaudin
Abstract:
We report on the excitation and detection of short-waved spin waves with wave vectors up to about $40\,\mathrm{rad}\,μ\mathrm{m}^{-1}$ in spin-wave waveguides made from ultrathin, in-plane magnetized Co$_{8}$Fe$_{72}$B$_{20}$ (CoFeB). The CoFeB is incorporated in a layer stack of Ta/CoFeB/Mgo, a layer system featuring large spin orbit torques and a large perpendicular magnetic anisotropy constant.…
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We report on the excitation and detection of short-waved spin waves with wave vectors up to about $40\,\mathrm{rad}\,μ\mathrm{m}^{-1}$ in spin-wave waveguides made from ultrathin, in-plane magnetized Co$_{8}$Fe$_{72}$B$_{20}$ (CoFeB). The CoFeB is incorporated in a layer stack of Ta/CoFeB/Mgo, a layer system featuring large spin orbit torques and a large perpendicular magnetic anisotropy constant. The short-waved spin waves are excited by nanometric coplanar waveguides and are detected via spin rectification and microfocussed Brillouin light scattering spectroscopy. We show that the large perpendicular magnetic anisotropy benefits the spin-wave lifetime greatly, resulting in a lifetime comparable to bulk systems without interfacial damping. The presented results pave the way for the successful extension of magnonics to ultrathin asymmetric layer stacks featuring large spin orbit torques.
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Submitted 5 January, 2017;
originally announced January 2017.
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Creation of uni-directional spin-wave emitters by utilizing interfacial Dzyaloshinskii-Moriya interaction
Authors:
Thomas Brächer,
Philipp Pirro,
Olivier Boulle,
Gilles Gaudin
Abstract:
We present an analytic and numerical study of the creation of an uni-directional spin-wave emission in ultra-thin ferromagnetic films sandwiched in an asymmetric layer stack. For this we extend the analytical description of spin waves in spin-wave waveguides by the incorporation of the influence of the interfacial Dzyaloshinskii-Moriya interaction on the spin-wave propagation. By exploring the mod…
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We present an analytic and numerical study of the creation of an uni-directional spin-wave emission in ultra-thin ferromagnetic films sandwiched in an asymmetric layer stack. For this we extend the analytical description of spin waves in spin-wave waveguides by the incorporation of the influence of the interfacial Dzyaloshinskii-Moriya interaction on the spin-wave propagation. By exploring the model system Ni$_{81}$Fe$_{19}$/Pt we show that it is possible to achieve an uni-directional spin-wave emission by combining wave-vector selective excitation sources with the frequency splitting which arises from interfacial Dzyaloshinskii-Moriya interaction. Hereby we focus on device feature sizes and spin-wave wavelengths compatible with state-of-the art excitation and detection schemes. We demonstrate that the optimum operation conditions for the non-reciprocal emission can be predicted using the presented analytical formalism
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Submitted 24 November, 2016; v1 submitted 23 November, 2016;
originally announced November 2016.
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The skyrmion switch: turning magnetic skyrmion bubbles on and off with an electric field
Authors:
M. Schott,
A. Bernand-Mantel,
L. Ranno,
S. Pizzini,
J. Vogel,
H. Béa,
C. Baraduc,
S. Auffret,
G. Gaudin,
D. Givord
Abstract:
Nanoscale magnetic skyrmions are considered as potential information carriers for future spintronics memory and logic devices. Such applications will require the control of their local creation and annihilation, which involves so far solutions that are either energy consuming or difficult to integrate. Here we demonstrate the control of skyrmion bubbles nucleation and annihilation using electric f…
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Nanoscale magnetic skyrmions are considered as potential information carriers for future spintronics memory and logic devices. Such applications will require the control of their local creation and annihilation, which involves so far solutions that are either energy consuming or difficult to integrate. Here we demonstrate the control of skyrmion bubbles nucleation and annihilation using electric field gating, an easily integrable and potentially energetically efficient solution. We present a detailed stability diagram of the skyrmion bubbles in a Pt/Co/oxide trilayer and show that their stability can be controlled via an applied electric field. An analytical bubble model, with the Dzyaloshinskii-Moriya interaction imbedded in the domain wall energy, account for the observed electrical skyrmion switching effect. This allows us to unveil the origin of the electrical control of skyrmions stability and to show that both magnetic dipolar interaction and the Dzyaloshinskii-Moriya interaction play an important role in the skyrmion bubble stabilization.
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Submitted 18 April, 2017; v1 submitted 4 November, 2016;
originally announced November 2016.
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Room temperature chiral magnetic skyrmion in ultrathin magnetic nanostructures
Authors:
Olivier Boulle,
Jan Vogel,
Hongxin Yang,
Stefania Pizzini,
Dayane de Souza Chaves,
Andrea Locatelli,
Tevfik Onur Menteş Alessandro Sala,
Liliana D. Buda-Prejbeanu,
Olivier Klein,
Mohamed Belmeguenai,
Yves Roussigné,
Andrey Stashkevich,
Salim Mourad Chérif,
Lucia Aballe,
Michael Foerster,
Mairbek Chshiev,
Stéphane Auffret,
Ioan Mihai Miron,
Gilles Gaudin
Abstract:
Magnetic skyrmions are chiral spin structures with a whirling configuration. Their topological properties, nanometer size and the fact that they can be moved by small current densities have opened a new paradigm for the manipulation of magnetisation at the nanoscale. To date, chiral skyrmion structures have been experimentally demonstrated only in bulk materials and in epitaxial ultrathin films an…
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Magnetic skyrmions are chiral spin structures with a whirling configuration. Their topological properties, nanometer size and the fact that they can be moved by small current densities have opened a new paradigm for the manipulation of magnetisation at the nanoscale. To date, chiral skyrmion structures have been experimentally demonstrated only in bulk materials and in epitaxial ultrathin films and under external magnetic field or at low temperature. Here, we report on the observation of stable skyrmions in sputtered ultrathin Pt/Co/MgO nanostructures, at room temperature and zero applied magnetic field. We use high lateral resolution X-ray magnetic circular dichroism microscopy to image their chiral Néel internal structure which we explain as due to the large strength of the Dzyaloshinskii-Moriya interaction as revealed by spin wave spectroscopy measurements. Our results are substantiated by micromagnetic simulations and numerical models, which allow the identification of the physical mechanisms governing the size and stability of the skyrmions.
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Submitted 10 January, 2016;
originally announced January 2016.
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Spin-orbit torque driven chiral magnetization reversal in ultrathin nanostructures
Authors:
N. Mikuszeit,
O. Boulle,
I. M. Miron,
K. Garello,
P. Gambardella,
G. Gaudin,
L. D. Buda-Prejbeanu
Abstract:
We show that the spin-orbit torque induced magnetization switching in nanomagnets presenting Dzyaloshinskii-Moriya (DMI) interaction is governed by a chiral domain nucleation at the edges. The nucleation is induced by the DMI and the applied in-plane magnetic field followed by domain wall propagation. Our micromagnetic simulations show that the DC switching current can be defined as the edge nucle…
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We show that the spin-orbit torque induced magnetization switching in nanomagnets presenting Dzyaloshinskii-Moriya (DMI) interaction is governed by a chiral domain nucleation at the edges. The nucleation is induced by the DMI and the applied in-plane magnetic field followed by domain wall propagation. Our micromagnetic simulations show that the DC switching current can be defined as the edge nucleation current, which decreases strongly with increasing amplitude of the DMI. This description allows us to build a simple analytical model to quantitatively predict the switching current. We find that domain nucleation occurs down to a lateral size of 15 nm, defined by the length-scale of the DMI, beyond which the reversal mechanism approaches a macrospin behavior. The switching is deterministic and bipolar.
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Submitted 24 September, 2015;
originally announced September 2015.
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Ultra-fast perpendicular Spin Orbit Torque MRAM
Authors:
Murat Cubukcu,
Olivier Boulle,
Nikolaï Mikuszeit,
Claire Hamelin,
Thomas Brächer,
Nathalie Lamard,
Marie-Claire Cyrille,
Liliana Buda-Prejbeanu,
Kevin Garello,
Ioan Mihai Miron,
O. Klein,
G. de Loubens,
V. V. Naletov,
Juergen Langer,
Berthold Ocker,
Pietro Gambardella,
Gilles Gaudin
Abstract:
We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below 10 ns, which translates into a minimum in the write energy in the ns range. Our results show that SOT-MRAM allows fast and low power write operations, which rend…
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We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below 10 ns, which translates into a minimum in the write energy in the ns range. Our results show that SOT-MRAM allows fast and low power write operations, which renders it promising for non-volatile cache memory applications.
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Submitted 5 March, 2018; v1 submitted 8 September, 2015;
originally announced September 2015.
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Phenomenology of chiral damping in noncentrosymmetric magnets
Authors:
C. A. Akosa,
I. M. Miron,
G. Gaudin,
A. Manchon
Abstract:
A phenomenology of magnetic chiral damping is proposed in the context of magnetic materials lacking inversion symmetry breaking. We show that the magnetic damping tensor adopts a general form that accounts for a component linear in magnetization gradient in the form of Lifshitz invariants. We propose different microscopic mechanisms that can produce such a damping in ferromagnetic metals, among wh…
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A phenomenology of magnetic chiral damping is proposed in the context of magnetic materials lacking inversion symmetry breaking. We show that the magnetic damping tensor adopts a general form that accounts for a component linear in magnetization gradient in the form of Lifshitz invariants. We propose different microscopic mechanisms that can produce such a damping in ferromagnetic metals, among which spin pumping in the presence of anomalous Hall effect and an effective "$s$-$d$" Dzyaloshinskii-Moriya antisymmetric exchange. The implication of this chiral damping in terms of domain wall motion is investigated in the flow and creep regimes. These predictions have major importance in the context of field- and current-driven texture motion in noncentrosymmetric (ferro-, ferri-, antiferro-)magnets, not limited to metals.
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Submitted 28 July, 2015;
originally announced July 2015.
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Chiral damping of magnetic domain walls
Authors:
Emilie Jué,
C. K. Safeer,
Marc Drouard,
Alexandre Lopez,
Paul Balint,
Liliana Buda-Prejbeanu,
Olivier Boulle,
Stephane Auffret,
Alain Schuhl,
Aurelien Manchon,
Ioan Mihai Miron,
Gilles Gaudin
Abstract:
Structural symmetry breaking in magnetic materials is responsible for a variety of outstanding physical phenomena. Examples range from the existence of multiferroics, to current induced spin orbit torques (SOT) and the formation of topological magnetic structures. In this letter we bring into light a novel effect of the structural inversion asymmetry (SIA): a chiral damping mechanism. This phenome…
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Structural symmetry breaking in magnetic materials is responsible for a variety of outstanding physical phenomena. Examples range from the existence of multiferroics, to current induced spin orbit torques (SOT) and the formation of topological magnetic structures. In this letter we bring into light a novel effect of the structural inversion asymmetry (SIA): a chiral damping mechanism. This phenomenon is evidenced by measuring the field driven domain wall (DW) motion in perpendicularly magnetized asymmetric Pt/Co/Pt trilayers. The difficulty in evidencing the chiral damping is that the ensuing DW dynamics exhibit identical spatial symmetry to those expected from the Dzyaloshinskii-Moriya interaction (DMI). Despite this fundamental resemblance, the two scenarios are differentiated by their time reversal properties: while DMI is a conservative effect that can be modeled by an effective field, the chiral damping is purely dissipative and has no influence on the equilibrium magnetic texture. When the DW motion is modulated by an in-plane magnetic field, it reveals the structure of the internal fields experienced by the DWs, allowing to distinguish the physical mechanism. The observation of the chiral damping, not only enriches the spectrum of physical phenomena engendered by the SIA, but since it can coexists with DMI it is essential for conceiving DW and skyrmion devices.
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Submitted 16 April, 2015;
originally announced April 2015.
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The nature of domain walls in ultrathin ferromagnets revealed by scanning nanomagnetometry
Authors:
J. -P. Tetienne,
T. Hingant,
L. J. Martinez,
S. Rohart,
A. Thiaville,
L. Herrera Diez,
K. Garcia,
J. -P. Adam,
J. -V. Kim,
J. -F. Roch,
I. M. Miron,
G. Gaudin,
L. Vila,
B. Ocker,
D. Ravelosona,
V. Jacques
Abstract:
The recent observation of current-induced domain wall (DW) motion with large velocity in ultrathin magnetic wires has opened new opportunities for spintronic devices. However, there is still no consensus on the underlying mechanisms of DW motion. Key to this debate is the DW structure, which can be of Bloch or Néel type, and dramatically affects the efficiency of the different proposed mechanisms.…
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The recent observation of current-induced domain wall (DW) motion with large velocity in ultrathin magnetic wires has opened new opportunities for spintronic devices. However, there is still no consensus on the underlying mechanisms of DW motion. Key to this debate is the DW structure, which can be of Bloch or Néel type, and dramatically affects the efficiency of the different proposed mechanisms. To date, most experiments aiming to address this question have relied on deducing the DW structure and chirality from its motion under additional in-plane applied fields, which is indirect and involves strong assumptions on its dynamics. Here we introduce a general method enabling direct, in situ, determination of the DW structure in ultrathin ferromagnets. It relies on local measurements of the stray field distribution above the DW using a scanning nanomagnetometer based on the Nitrogen-Vacancy defect in diamond. We first apply the method to a Ta/Co40Fe40B20(1 nm)/MgO magnetic wire and find clear signature of pure Bloch DWs. In contrast, we observe left-handed Néel DWs in a Pt/Co(0.6 nm)/AlOx wire, providing direct evidence for the presence of a sizable Dzyaloshinskii-Moriya interaction (DMI) at the Pt/Co interface. This method offers a new path for exploring interfacial DMI in ultrathin ferromagnets and elucidating the physics of DW motion under current.
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Submitted 6 October, 2014;
originally announced October 2014.
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Chirality-induced asymmetric magnetic nucleation in Pt/Co/AlOx ultrathin microstructures
Authors:
Stefania Pizzini,
Jan Vogel,
Stanislas Rohart,
Liliana-Daniela Buda,
E. Jué,
Olivier Boulle,
Ioan Mihai Miron,
C. K. Safeer,
Stéphane Auffret,
Gilles Gaudin,
André Thiaville
Abstract:
The nucleation of reversed magnetic domains in Pt/Co/AlO$_{x}$ microstructures with perpendicular anisotropy was studied experimentally in the presence of an in-plane magnetic field. For large enough in-plane field, nucleation was observed preferentially at an edge of the sample normal to this field. The position at which nucleation takes place was observed to depend in a chiral way on the initial…
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The nucleation of reversed magnetic domains in Pt/Co/AlO$_{x}$ microstructures with perpendicular anisotropy was studied experimentally in the presence of an in-plane magnetic field. For large enough in-plane field, nucleation was observed preferentially at an edge of the sample normal to this field. The position at which nucleation takes place was observed to depend in a chiral way on the initial magnetization and applied field directions. An explanation of these results is proposed, based on the existence of a sizable Dzyaloshinskii-Moriya interaction in this sample. Another consequence of this interaction is that the energy of domain walls can become negative for in-plane fields smaller than the effective anisotropy field.
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Submitted 19 September, 2014; v1 submitted 19 March, 2014;
originally announced March 2014.
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Fieldlike and antidamping spin-orbit torques in as-grown and annealed Ta/CoFeB/MgO layers
Authors:
Can Onur Avci,
Kevin Garello,
Corneliu Nistor,
Sylvie Godey,
Belen Ballesteros,
Aitor Mugarza,
Alessandro Barla,
Manuel Valvidares,
Eric Pellegrin,
Abhijit Ghosh,
Ioan Mihai Miron,
Olivier Boulle,
Stephane Auffret,
Gilles Gaudin,
Pietro Gambardella
Abstract:
We present a comprehensive study of the current-induced spin-orbit torques in perpendicularly magnetized Ta/CoFeB/MgO layers. The samples were annealed in steps up to 300 degrees C and characterized using x-ray absorption spectroscopy, transmission electron microscopy, resistivity, and Hall effect measurements. By performing adiabatic harmonic Hall voltage measurements, we show that the transverse…
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We present a comprehensive study of the current-induced spin-orbit torques in perpendicularly magnetized Ta/CoFeB/MgO layers. The samples were annealed in steps up to 300 degrees C and characterized using x-ray absorption spectroscopy, transmission electron microscopy, resistivity, and Hall effect measurements. By performing adiabatic harmonic Hall voltage measurements, we show that the transverse (field-like) and longitudinal (antidamping-like) spin-orbit torques are composed of constant and magnetization-dependent contributions, both of which vary strongly with annealing. Such variations correlate with changes of the saturation magnetization and magnetic anisotropy and are assigned to chemical and structural modifications of the layers. The relative variation of the constant and anisotropic torque terms as a function of annealing temperature is opposite for the field-like and antidamping torques. Measurements of the switching probability using sub-μs current pulses show that the critical current increases with the magnetic anisotropy of the layers, whereas the switching efficiency, measured as the ratio of magnetic anisotropy energy and pulse energy, decreases. The optimal annealing temperature to achieve maximum magnetic anisotropy, saturation magnetization, and switching efficiency is determined to be between 240 degrees and 270 degrees C.
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Submitted 15 July, 2014; v1 submitted 5 February, 2014;
originally announced February 2014.
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Spin-orbit-torque magnetization switching of a three terminal perpendicular magnetic tunnel junction
Authors:
Murat Cubukcu,
Olivier Boulle,
Marc Drouard,
Kevin Garello,
Can Onur Avci,
Ioan Mihai Miron,
Juergen Langer,
Berthold Ocker,
Pietro Gambardella,
Gilles Gaudin
Abstract:
We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and the read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of curr…
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We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and the read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density $5\times10^{11}$ A/m$^2$ in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof of concept of a perpendicular spin-orbit torque magnetic memory cell.
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Submitted 23 December, 2013; v1 submitted 30 October, 2013;
originally announced October 2013.
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Ultrafast magnetization switching by spin-orbit torques
Authors:
Kevin Garello,
Can Onur Avci,
Ioan Mihai Miron,
Manuel Baumgartner,
Abhijit Ghosh,
Stéphane Auffret,
Olivier Boulle,
Gilles Gaudin,
Pietro Gambardella
Abstract:
Spin-orbit torques induced by spin Hall and interfacial effects in heavy metal/ferromagnetic bilayers allow for a switching geometry based on in-plane current injection. Using this geometry, we demonstrate deterministic magnetization reversal by current pulses ranging from 180~ps to ms in Pt/Co/AlOx dots with lateral dimensions of 90~nm. We characterize the switching probability and critical curre…
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Spin-orbit torques induced by spin Hall and interfacial effects in heavy metal/ferromagnetic bilayers allow for a switching geometry based on in-plane current injection. Using this geometry, we demonstrate deterministic magnetization reversal by current pulses ranging from 180~ps to ms in Pt/Co/AlOx dots with lateral dimensions of 90~nm. We characterize the switching probability and critical current $I_c$ as function of pulse length, amplitude, and external field. Our data evidence two distinct regimes: a short-time intrinsic regime, where $I_c$ scales linearly with the inverse of the pulse length, and a long-time thermally assisted regime where $I_c$ varies weakly. Both regimes are consistent with magnetization reversal proceeding by nucleation and fast propagation of domains. We find that $I_c$ is a factor 3-4 smaller compared to a single domain model and that the incubation time is negligibly small, which is a hallmark feature of spin-orbit torques.
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Submitted 4 September, 2014; v1 submitted 21 October, 2013;
originally announced October 2013.
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Current induced domain wall dynamics in the presence of spin orbit torques
Authors:
O. Boulle,
L. D. Buda-Prejbeanu,
E. Jué,
I. M. Miron,
G. Gaudin
Abstract:
Current induced domain wall (DW) motion in perpendicularly magnetized nanostripes in the presence of spin orbit torques is studied. We show using micromagnetic simulations that the direction of the current induced DW motion and the associated DW velocity depend on the relative values of the field like torque (FLT) and the Slonczewski like torques (SLT). The results are well explained by a collecti…
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Current induced domain wall (DW) motion in perpendicularly magnetized nanostripes in the presence of spin orbit torques is studied. We show using micromagnetic simulations that the direction of the current induced DW motion and the associated DW velocity depend on the relative values of the field like torque (FLT) and the Slonczewski like torques (SLT). The results are well explained by a collective coordinate model which is used to draw a phase diagram of the DW dynamics as a function of the FLT and the SLT. We show that a large increase in the DW velocity can be reached by a proper tuning of both torques.
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Submitted 18 October, 2013; v1 submitted 15 October, 2013;
originally announced October 2013.
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Bias dependence of tunneling magnetoresistance in magnetic tunnel junctions with asymmetric barriers
Authors:
Alan Kalitsov,
Pierre-Jean Zermatten,
Frédéric Bonell,
Gilles Gaudin,
Stéphane Andrieu,
Coriolan Tiusan,
Mairbek Chshiev,
Julian P. Velev
Abstract:
The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias dependence of tunneling magnetoresistance (TMR) in single crystal Fe/MgO-based MTJs with (i) one crystalline and one rough interface and (ii) with a monolayer of O dep…
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The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias dependence of tunneling magnetoresistance (TMR) in single crystal Fe/MgO-based MTJs with (i) one crystalline and one rough interface and (ii) with a monolayer of O deposited at the crystalline interface. In both cases we observe an asymmetric bias dependence of TMR and a reversal of its sign at large bias. We propose a general model to explain the bias dependence in these and similar systems reported earlier. The model predicts the existence of two distinct TMR regimes: (i) tunneling regime when the interface is modified with layers of a different insulator and (ii) resonant regime when thin metallic layers are inserted at the interface. We demonstrate that in the tunneling regime negative TMR is due to the high voltage which overcomes the exchange splitting in the electrodes, while the asymmetric bias dependence of TMR is due to the interface transmission probabilities. In the resonant regime inversion of TMR could happen at zero voltage depending on the alignment of the resonance levels with the Fermi surfaces of the electrodes. Moreover, the model predicts a regime in which TMR has different sign at positive and negative bias suggesting possibilities of combining memory with logic functions.
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Submitted 17 September, 2013;
originally announced September 2013.
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NV-center imaging of bubble domains in a 6 Å film of cobalt with perpendicular magnetization
Authors:
J. -P. Tetienne,
T. Hingant,
L. Rondin,
S. Rohart,
A. Thiaville,
E. Jué,
G. Gaudin,
J. -F. Roch,
V. Jacques
Abstract:
We employ a scanning NV-center microscope to perform stray field imaging of bubble magnetic domains in a perpendicularly magnetized Pt/Co/AlOx trilayer with 6 Å of Co. The stray field created by the domain walls is quantitatively mapped with few-nanometer spatial resolution, with a probe-sample distance of about 100 nm. As an example of application, we show that it should be possible to determine…
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We employ a scanning NV-center microscope to perform stray field imaging of bubble magnetic domains in a perpendicularly magnetized Pt/Co/AlOx trilayer with 6 Å of Co. The stray field created by the domain walls is quantitatively mapped with few-nanometer spatial resolution, with a probe-sample distance of about 100 nm. As an example of application, we show that it should be possible to determine the Bloch or Néel nature of the domain walls, which is of crucial importance to the understanding of current-controlled domain wall motion.
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Submitted 10 January, 2014; v1 submitted 10 September, 2013;
originally announced September 2013.
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Domain wall tilting in the presence of the Dzyaloshinskii-Moriya interaction in out-of-plane magnetized magnetic nanotracks
Authors:
O. Boulle,
S. Rohart,
L. D. Buda-Prejbeanu,
E. Jué,
I. M. Miron,
S. Pizzini,
J. Vogel,
G. Gaudin,
A. Thiaville
Abstract:
We show that the Dzyaloshinskii-Moriya interaction (DMI) can lead to a tilting of the domain wall (DW) surface in perpendicularly magnetized magnetic nanotracks when DW dynamics is driven by an easy axis magnetic field or a spin polarized current. The DW tilting affects the DW dynamics for large DMI and the tilting relaxation time can be very large as it scales with the square of the track width.…
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We show that the Dzyaloshinskii-Moriya interaction (DMI) can lead to a tilting of the domain wall (DW) surface in perpendicularly magnetized magnetic nanotracks when DW dynamics is driven by an easy axis magnetic field or a spin polarized current. The DW tilting affects the DW dynamics for large DMI and the tilting relaxation time can be very large as it scales with the square of the track width. The results are well explained by an analytical model based on a Lagrangian approach where the DMI and the DW tilting are included. We propose a simple way to estimate the DMI in a magnetic multilayers by measuring the dependence of the DW tilt angle on a transverse static magnetic field. Our results shed light on the current induced DW tilting observed recently in Co/Ni multilayers with inversion asymmetry, and further support the presence of DMI in these systems.
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Submitted 8 August, 2013;
originally announced August 2013.
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Spatially periodic domain wall pinning potentials: Asymmetric pinning and dipolar biasing
Authors:
P. J. Metaxas,
P. -J. Zermatten,
R. L. Novak,
S. Rohart,
J. -P. Jamet,
R. Weil,
J. Ferré,
A. Mougin,
R. L. Stamps,
G. Gaudin,
V. Baltz,
B. Rodmacq
Abstract:
Domain wall propagation has been measured in continuous, weakly disordered, quasi-two-dimensional, Ising-like magnetic layers that are subject to spatially periodic domain wall pinning potentials. The potentials are generated non-destructively using the stray magnetic field of ordered arrays of magnetically hard [Co/Pt]$_m$ nanoplatelets which are patterned above and are physically separated from…
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Domain wall propagation has been measured in continuous, weakly disordered, quasi-two-dimensional, Ising-like magnetic layers that are subject to spatially periodic domain wall pinning potentials. The potentials are generated non-destructively using the stray magnetic field of ordered arrays of magnetically hard [Co/Pt]$_m$ nanoplatelets which are patterned above and are physically separated from the continuous magnetic layer. The effect of the periodic pinning potentials on thermally activated domain wall creep dynamics is shown to be equivalent, at first approximation, to that of a uniform, effective retardation field, $H_{ret}$, which acts against the applied field, $H$. We show that $H_{ret}$ depends not only on the array geometry but also on the relative orientation of $H$ and the magnetization of the nanoplatelets. A result of the latter dependence is that wall-mediated hysteresis loops obtained for a set nanoplatelet magnetization exhibit many properties that are normally associated with ferromagnet/antiferromagnet exchange bias systems. These include a switchable bias, coercivity enhancement and domain wall roughness that is dependent on the applied field polarity.
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Submitted 28 April, 2013;
originally announced April 2013.
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Electric-field control of domain wall nucleation and pinning in a metallic ferromagnet
Authors:
A. Bernand-Mantel,
L. Herrera-Diez,
L. Ranno,
S. Pizzini,
J. Vogel,
D. Givord,
S. Auffret,
O. Boulle,
I. M. Miron,
G. Gaudin
Abstract:
The electric (E) field control of magnetic properties opens the prospects of an alternative to magnetic field or electric current activation to control magnetization. Multilayers with perpendicular magnetic anisotropy (PMA) have proven to be particularly sensitive to the influence of an E-field due to the interfacial origin of their anisotropy. In these systems, E-field effects have been recently…
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The electric (E) field control of magnetic properties opens the prospects of an alternative to magnetic field or electric current activation to control magnetization. Multilayers with perpendicular magnetic anisotropy (PMA) have proven to be particularly sensitive to the influence of an E-field due to the interfacial origin of their anisotropy. In these systems, E-field effects have been recently applied to assist magnetization switching and control domain wall (DW) velocity. Here we report on two new applications of the E-field in a similar material : controlling DW nucleation and stopping DW propagation at the edge of the electrode.
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Submitted 17 January, 2013;
originally announced January 2013.
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Symmetry and magnitude of spin-orbit torques in ferromagnetic heterostructures
Authors:
Kevin Garello,
Ioan Mihai Miron,
Can Onur Avci,
Frank Freimuth,
Yuriy Mokrousov,
Stefan Blügel,
Stéphane Auffret,
Olivier Boulle,
Gilles Gaudin,
Pietro Gambardella
Abstract:
Current-induced spin torques are of great interest to manipulate the orientation of nanomagnets without applying external magnetic fields. They find direct application in non-volatile data storage and logic devices, and provide insight into fundamental processes related to the interdependence between charge and spin transport. Recent demonstrations of magnetization switching induced by in-plane cu…
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Current-induced spin torques are of great interest to manipulate the orientation of nanomagnets without applying external magnetic fields. They find direct application in non-volatile data storage and logic devices, and provide insight into fundamental processes related to the interdependence between charge and spin transport. Recent demonstrations of magnetization switching induced by in-plane current injection in ferromagnetic heterostructures have drawn attention to a class of spin torques based on orbital-to-spin momentum transfer, which is alternative to pure spin transfer torque (STT) between noncollinear magnetic layers and amenable to more diversified device functions. Due to the limited number of studies, however, there is still no consensus on the symmetry, magnitude, and origin of spin-orbit torques (SOTs). Here we report on the quantitative vector measurement of SOTs in Pt/Co/AlO trilayers using harmonic analysis of the anomalous and planar Hall effects as a function of the applied current and magnetization direction. We provide an all-purpose scheme to measure the amplitude and direction of SOTs for any arbitrary orientation of the magnetization, including corrections due to the interplay of Hall and thermoelectric effects. Based on general space and time inversion symmetry arguments, we show that asymmetric heterostructures allow for two different SOTs having odd and even behavior with respect to magnetization reversal. Our results reveal a scenario that goes beyond established models of the Rashba and spin Hall contributions to SOTs. The even SOT is STT-like but stronger than expected from the spin Hall effect in Pt. The odd SOT is composed of a constant field-like term and an additional component, which is strongly anisotropic and does not correspond to a simple Rashba field.
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Submitted 5 June, 2013; v1 submitted 15 January, 2013;
originally announced January 2013.
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Current induced domain wall dynamics in the presence of a transverse magnetic field in out-of-plane magnetized materials
Authors:
O. Boulle,
L. D. Buda-Prejbeanu,
M. Miron,
G. Gaudin
Abstract:
An analytical model was developped to describe the current induced DW dynamics of a Bloch DW in the presence of an external transverse magnetic field. The model takes into account the DW deformation and the magnetization tilting in the domain. The model is compared to the results of micromagnetic simulation and an excellent agreement is obtained. In the steady state regime, the model shows that th…
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An analytical model was developped to describe the current induced DW dynamics of a Bloch DW in the presence of an external transverse magnetic field. The model takes into account the DW deformation and the magnetization tilting in the domain. The model is compared to the results of micromagnetic simulation and an excellent agreement is obtained. In the steady state regime, the model shows that the domain tilting does not change the DW mobility. An external or current induced transverse magnetic field such as the Oersted or Rashba field can prevent the Walker breakdown leading to a higher domain wall velocity.
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Submitted 20 July, 2012;
originally announced July 2012.
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Direct Observation of Massless Domain Wall Dynamics in Nanostripes with Perpendicular Magnetic Anisotropy
Authors:
Jan Vogel,
Marlio Bonfim,
Nicolas Rougemaille,
Olivier Boulle,
Ioan Mihai Miron,
Stéphane Auffret,
Bernard Rodmacq,
Gilles Gaudin,
J. C. Cezar,
Fausto Sirotti,
Stefania Pizzini
Abstract:
Domain wall motion induced by nanosecond current pulses in nanostripes with perpendicular magnetic anisotropy (Pt/Co/AlO$_x$) is shown to exhibit negligible inertia. Time-resolved magnetic microscopy during current pulses reveals that the domain walls start moving, with a constant speed, as soon as the current reaches a constant amplitude, and no or little motion takes place after the end of the p…
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Domain wall motion induced by nanosecond current pulses in nanostripes with perpendicular magnetic anisotropy (Pt/Co/AlO$_x$) is shown to exhibit negligible inertia. Time-resolved magnetic microscopy during current pulses reveals that the domain walls start moving, with a constant speed, as soon as the current reaches a constant amplitude, and no or little motion takes place after the end of the pulse. The very low 'mass' of these domain walls is attributed to the combination of their narrow width and high damping parameter $α$. Such a small inertia should allow accurate control of domain wall motion, by tuning the duration and amplitude of the current pulses.
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Submitted 21 June, 2012;
originally announced June 2012.
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Direct observation of Oersted-field-induced magnetization dynamics in magnetic nanostripes
Authors:
Vojtech Uhlîr,
Stefania Pizzini,
Nicolas Rougemaille,
Vincent Cros,
Erika Jimenez,
Laurent Ranno,
Olivier Fruchart,
Michal Urbanek,
Gilles Gaudin,
Julio Camarero,
Carsten Tieg,
Fausto Sirotti,
Edouard Wagner,
Jan Vogel
Abstract:
We have used time-resolved x-ray photoemission electron microscopy to investigate the magnetization dynamics induced by nanosecond current pulses in NiFe/Cu/Co nanostripes. A large tilt of the NiFe magnetization in the direction transverse to the stripe is observed during the pulses. We show that this effect cannot be quantitatively understood from the amplitude of the Oersted field and the shape…
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We have used time-resolved x-ray photoemission electron microscopy to investigate the magnetization dynamics induced by nanosecond current pulses in NiFe/Cu/Co nanostripes. A large tilt of the NiFe magnetization in the direction transverse to the stripe is observed during the pulses. We show that this effect cannot be quantitatively understood from the amplitude of the Oersted field and the shape anisotropy. High frequency oscillations observed at the onset of the pulses are attributed to precessional motion of the NiFe magnetization about the effective field. We discuss the possible origins of the large magnetization tilt and the potential implications of the static and dynamic effects of the Oersted field on current-induced domain wall motion in such stripes.
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Submitted 14 January, 2011; v1 submitted 5 February, 2010;
originally announced February 2010.
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High domain wall velocities induced by current in ultrathin Pt/Co/AlOx wires with perpendicular magnetic anisotropy
Authors:
T. A. Moore,
I. M. Miron,
G. Gaudin,
G. Serret,
S. Auffret,
B. Rodmacq,
A. Schuhl,
S. Pizzini,
J. Vogel,
M. Bonfim
Abstract:
Current-induced domain wall (DW) displacements in an array of ultrathin Pt/Co/AlOx wires with perpendicular magnetic anisotropy have been directly observed by wide field Kerr microscopy. DWs in all wires in the array were driven simultaneously and their displacement on the micrometer-scale was controlled by the current pulse amplitude and duration. At the lower current densities where DW displac…
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Current-induced domain wall (DW) displacements in an array of ultrathin Pt/Co/AlOx wires with perpendicular magnetic anisotropy have been directly observed by wide field Kerr microscopy. DWs in all wires in the array were driven simultaneously and their displacement on the micrometer-scale was controlled by the current pulse amplitude and duration. At the lower current densities where DW displacements were observed (j less than or equal to 1.5 x 10^12 A/m^2), the DW motion obeys a creep law. At higher current density (j = 1.8 x 10^12 A/m^2), zero-field average DW velocities up to 130 +/- 10 m/s were recorded.
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Submitted 24 September, 2009; v1 submitted 8 December, 2008;
originally announced December 2008.
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The domain wall spin torque-meter
Authors:
I. M. Miron,
P. -J. Zermatten,
G. Gaudin,
S. Auffret,
B. Rodmacq,
A. Schuhl
Abstract:
We report the direct measurement of the non-adiabatic component of the spin-torque in domain walls. Our method is independent of both the pinning of the domain wall in the wire as well as of the Gilbert damping parameter. We demonstrate that the ratio between the non-adiabatic and the adiabatic components can be as high as 1, and explain this high value by the importance of the spin-flip rate to…
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We report the direct measurement of the non-adiabatic component of the spin-torque in domain walls. Our method is independent of both the pinning of the domain wall in the wire as well as of the Gilbert damping parameter. We demonstrate that the ratio between the non-adiabatic and the adiabatic components can be as high as 1, and explain this high value by the importance of the spin-flip rate to the non-adiabatic torque. Besides their fundamental significance these results open the way for applications by demonstrating a significant increase of the spin torque efficiency.
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Submitted 25 October, 2008;
originally announced October 2008.