Showing 1–50 of 59 results for author: Bluhm, H

Strategies for enhancing spin-shuttling fidelities in Si/SiGe quantum wells with random-alloy disorder

Authors: Merritt P. Losert, Max Oberländer, Julian D. Teske, Mats Volmer, Lars R. Schreiber, Hendrik Bluhm, S. N. Coppersmith, Mark Friesen

Abstract: Coherent coupling between distant qubits is needed for any scalable quantum computing scheme. In quantum dot systems, one proposal for long-distance coupling is to coherently transfer electron spins across a chip in a moving potential. Here, we use simulations to study challenges for spin shuttling in Si/SiGe heterostructures caused by the valley degree of freedom. We show that for devices with va… ▽ More Coherent coupling between distant qubits is needed for any scalable quantum computing scheme. In quantum dot systems, one proposal for long-distance coupling is to coherently transfer electron spins across a chip in a moving potential. Here, we use simulations to study challenges for spin shuttling in Si/SiGe heterostructures caused by the valley degree of freedom. We show that for devices with valley splitting dominated by alloy disorder, one can expect to encounter pockets of low valley splitting, given a long-enough shuttling path. At such locations, inter-valley tunneling leads to dephasing of the spin wavefunction, substantially reducing the shuttling fidelity. We show how to mitigate this problem by modifying the heterostructure composition, or by varying the vertical electric field, the shuttling velocity, the shape and size of the dot, or the shuttling path. We further show that combinations of these strategies can reduce the shuttling infidelity by several orders of magnitude, putting shuttling fidelities sufficient for error correction within reach. △ Less

Submitted 23 May, 2024; v1 submitted 2 May, 2024; originally announced May 2024.

Comments: 23 pages, 12 figures

Noise reduction by bias cooling in gated Si/SixGe1-x quantum dots

Authors: Julian Ferrero, Thomas Koch, Sonja Vogel, Daniel Schroller, Viktor Adam, Ran Xue, Inga Seidler, Lars R. Schreiber, Hendrik Bluhm, Wolfgang Wernsdorfer

Abstract: Silicon-Germanium heterostructures are a promising quantum circuit platform, but crucial aspects as the long-term charge dynamics and cooldown-to-cooldown variations are still widely unexplored quantitatively. In this letter we present the results of an extensive bias cooling study performed on gated silicon-germanium quantum dots with an Al2O3-dielectric. Over 80 cooldowns were performed in the c… ▽ More Silicon-Germanium heterostructures are a promising quantum circuit platform, but crucial aspects as the long-term charge dynamics and cooldown-to-cooldown variations are still widely unexplored quantitatively. In this letter we present the results of an extensive bias cooling study performed on gated silicon-germanium quantum dots with an Al2O3-dielectric. Over 80 cooldowns were performed in the course of our investigations. The performance of the devices is assessed by low-frequency charge noise measurements in the band of 200 micro Hertz to 10 milli Hertz. We measure the total noise power as a function of the applied voltage during cooldown in four different devices and find a minimum in noise at 0.7V bias cooling voltage for all observed samples. We manage to decrease the total noise power median by a factor of 6 and compute a reduced tunneling current density using Schrödinger-Poisson simulations. Furthermore, we show the variation in noise from the same device in the course of eleven different cooldowns performed under the nominally same conditions. △ Less

Submitted 8 May, 2024; v1 submitted 30 April, 2024; originally announced May 2024.

Comments: 11 pages, 8 figures, silicon, SiGe, heterostructure, bias cooling, experiment, simulation

Large spin shuttling oscillations enabling high-fidelity single qubit gates

Authors: Akshay Menon Pazhedath, Alessandro David, Max Oberländer, Matthias M. Müller, Tommaso Calarco, Hendrik Bluhm, Felix Motzoi

Abstract: Semiconductor quantum dots have shown impressive breakthroughs in the last years, with single and two qubit gate fidelities matching other leading platforms and scalability still remaining a relative strength. However, due to qubit wiring considerations, mobile electron architectures have been proposed to facilitate upward scaling. In this work, we examine and demonstrate the possibility of signif… ▽ More Semiconductor quantum dots have shown impressive breakthroughs in the last years, with single and two qubit gate fidelities matching other leading platforms and scalability still remaining a relative strength. However, due to qubit wiring considerations, mobile electron architectures have been proposed to facilitate upward scaling. In this work, we examine and demonstrate the possibility of significantly outperforming static EDSR-type single-qubit pulsing by taking advantage of the larger spatial mobility to achieve larger Rabi frequencies and reduce the effect of charge noise. Our theoretical results indicate that fidelities are ultimately bottlenecked by spin-valley physics, which can be suppressed through the use of quantum optimal control, and we demonstrate that, across different potential regimes and competing physical models, shuttling based single-qubit gates retain significant advantage over existing alternatives. △ Less

Submitted 1 March, 2024; originally announced March 2024.

Comments: 11 Pages, 5 figures

Millikelvin confocal microscope with free-space access and high-frequency electrical control

Authors: Thomas Descamps, Feng Liu, Tobias Hangleiter, Sebastian Kindel, Beata E. Kardynał, Hendrik Bluhm

Abstract: Cryogenic confocal microscopy is a powerful method for studying solid state quantum devices such as single photon sources and optically controlled qubits. While the vast majority of such studies have been conducted at temperatures of a few Kelvin, experiments involving fragile quantum effects often require lower operating temperatures. To also allow for electrical dynamic control, microwave connec… ▽ More Cryogenic confocal microscopy is a powerful method for studying solid state quantum devices such as single photon sources and optically controlled qubits. While the vast majority of such studies have been conducted at temperatures of a few Kelvin, experiments involving fragile quantum effects often require lower operating temperatures. To also allow for electrical dynamic control, microwave connectivity is required. For polarization-sensitive studies, free space optical access is advantageous compared to fiber coupling. Here we present a confocal microscope in a dilution refrigerator providing all the above features at temperatures below 100 mK. The installed high frequency cabling meets the requirements for state of the art spin qubit experiments. As another unique advantage of our system, the sample fitting inside a large puck can be exchanged while keeping the cryostat cold with minimal realignment. Assessing the performance of the instrument, we demonstrate confocal imaging, sub-nanosecond modulation of the emission wavelength of a suitable sample and an electron temperature of 76 mK. While the instrument was constructed primarily with the development of optical interfaces to electrically controlled qubits in mind, it can be used for many experiments involving quantum transport, solid state quantum optics and microwave-optical transducers. △ Less

Submitted 6 January, 2024; originally announced January 2024.

Comments: 9 pages, 5 figures

Mapping of valley-splitting by conveyor-mode spin-coherent electron shuttling

Authors: Mats Volmer, Tom Struck, Arnau Sala, Bingjie Chen, Max Oberländer, Tobias Offermann, Ran Xue, Lino Visser, Jhih-Sian Tu, Stefan Trellenkamp, Łukasz Cywiński, Hendrik Bluhm, Lars R. Schreiber

Abstract: In Si/SiGe heterostructures, the low-lying excited valley state seriously limit operability and scalability of electron spin qubits. For characterizing and understanding the local variations in valley splitting, fast probing methods with high spatial and energy resolution are lacking. Leveraging the spatial control granted by conveyor-mode spin-coherent electron shuttling, we introduce a method fo… ▽ More In Si/SiGe heterostructures, the low-lying excited valley state seriously limit operability and scalability of electron spin qubits. For characterizing and understanding the local variations in valley splitting, fast probing methods with high spatial and energy resolution are lacking. Leveraging the spatial control granted by conveyor-mode spin-coherent electron shuttling, we introduce a method for two-dimensional mapping of the local valley splitting by detecting magnetic field dependent anticrossings of ground and excited valley states using entangled electron spin-pairs as a probe. The method has sub-μeV energy accuracy and a nanometer lateral resolution. The histogram of valley splittings spanning a large area of 210 nm by 18 nm matches well with statistics obtained by the established but time-consuming magnetospectroscopy method. For the specific heterostructure, we find a nearly Gaussian distribution of valley splittings and a correlation length similar to the quantum dot size. Our mapping method may become a valuable tool for engineering Si/SiGe heterostructures for scalable quantum computing. △ Less

Submitted 29 December, 2023; originally announced December 2023.

Comments: 17 pages, 11 Figures

Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe

Authors: Tom Struck, Mats Volmer, Lino Visser, Tobias Offermann, Ran Xue, Jhih-Sian Tu, Stefan Trellenkamp, Łukasz Cywiński, Hendrik Bluhm, Lars R. Schreiber

Abstract: Long-ranged coherent qubit coupling is a missing function block for scaling up spin qubit based quantum computing solutions. Spin-coherent conveyor-mode electron-shuttling could enable spin quantum-chips with scalable and sparse qubit-architecture. Its key feature is the operation by only few easily tuneable input terminals and compatibility with industrial gate-fabrication. Single electron shuttl… ▽ More Long-ranged coherent qubit coupling is a missing function block for scaling up spin qubit based quantum computing solutions. Spin-coherent conveyor-mode electron-shuttling could enable spin quantum-chips with scalable and sparse qubit-architecture. Its key feature is the operation by only few easily tuneable input terminals and compatibility with industrial gate-fabrication. Single electron shuttling in conveyor-mode in a 420 nm long quantum bus has been demonstrated previously. Here we investigate the spin coherence during conveyor-mode shuttling by separation and rejoining an Einstein-Podolsky-Rosen (EPR) spin-pair. Compared to previous work we boost the shuttle velocity by a factor of 10000. We observe a rising spin-qubit dephasing time with the longer shuttle distances due to motional narrowing and estimate the spin-shuttle infidelity due to dephasing to be 0.7 % for a total shuttle distance of nominal 560 nm. Shuttling several loops up to an accumulated distance of 3.36 $μ$m, spin-entanglement of the EPR pair is still detectable, giving good perspective for our approach of a shuttle-based scalable quantum computing architecture in silicon. △ Less

Submitted 10 July, 2023; originally announced July 2023.

Journal ref: Nat. Commun. 15, 1325 (2004)

Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function

Authors: Ran Xue, Max Beer, Inga Seidler, Simon Humpohl, Jhih-Sian Tu, Stefan Trellenkamp, Tom Struck, Hendrik Bluhm, Lars R. Schreiber

Abstract: The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Our all-electrical Si/SiGe shuttle device, called quantum bus (QuBus), spans a length of 10 $\mathrmμ$m and is operated by only six simply-tunable voltage pulses. It operates in conveyor-mode, i.e. the electron is adiabatically transported while confined to a moving QD. We… ▽ More The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Our all-electrical Si/SiGe shuttle device, called quantum bus (QuBus), spans a length of 10 $\mathrmμ$m and is operated by only six simply-tunable voltage pulses. It operates in conveyor-mode, i.e. the electron is adiabatically transported while confined to a moving QD. We introduce a characterization method, called shuttle-tomography, to benchmark the potential imperfections and local shuttle-fidelity of the QuBus. The fidelity of the single-electron shuttle across the full device and back (a total distance of 19 $\mathrmμ$m) is $(99.7 \pm 0.3)\,\%$. Using the QuBus, we position and detect up to 34 electrons and initialize a register of 34 quantum dots with arbitrarily chosen patterns of zero and single-electrons. The simple operation signals, compatibility with industry fabrication and low spin-environment-interaction in $^{28}$Si/SiGe, promises spin-conserving transport of spin qubits for quantum connectivity in quantum computing architectures. △ Less

Submitted 28 June, 2023; originally announced June 2023.

Comments: 11 pages, 6 figures

Journal ref: Nat Commun 15, 2296 (2024)

The SpinBus Architecture: Scaling Spin Qubits with Electron Shuttling

Authors: Matthias Künne, Alexander Willmes, Max Oberländer, Christian Gorjaew, Julian D. Teske, Harsh Bhardwaj, Max Beer, Eugen Kammerloher, René Otten, Inga Seidler, Ran Xue, Lars R. Schreiber, Hendrik Bluhm

Abstract: Quantum processor architectures must enable scaling to large qubit numbers while providing two-dimensional qubit connectivity and exquisite operation fidelities. For microwave-controlled semiconductor spin qubits, dense arrays have made considerable progress, but are still limited in size by wiring fan-out and exhibit significant crosstalk between qubits. To overcome these limitations, we introduc… ▽ More Quantum processor architectures must enable scaling to large qubit numbers while providing two-dimensional qubit connectivity and exquisite operation fidelities. For microwave-controlled semiconductor spin qubits, dense arrays have made considerable progress, but are still limited in size by wiring fan-out and exhibit significant crosstalk between qubits. To overcome these limitations, we introduce the SpinBus architecture, which uses electron shuttling to connect qubits and features low operating frequencies and enhanced qubit coherence. Device simulations for all relevant operations in the Si/SiGe platform validate the feasibility with established semiconductor patterning technology and operation fidelities exceeding 99.9 %. Control using room temperature instruments can plausibly support at least 144 qubits, but much larger numbers are conceivable with cryogenic control circuits. Building on the theoretical feasibility of high-fidelity spin-coherent electron shuttling as key enabling factor, the SpinBus architecture may be the basis for a spin-based quantum processor that meets the scalability requirements for practical quantum computing. △ Less

Submitted 28 June, 2023; originally announced June 2023.

Comments: 15 pages, 9 figures

Journal ref: Nat Commun 15, 4977 (2024)

Imaging Temperature and Thickness of Thin Planar Liquid Water Jets in Vacuum

Authors: Tillmann Buttersack, Henrik Haak, Hendrik Bluhm, Uwe Hergenhahn, Gerard Meijer, Bernd Winter

Abstract: We present spatially resolved measurements of the temperature of a flat liquid water microjet for varying pressures, from vacuum to 100% relative humidity. The entire jet surface is probed in a single shot by a high-resolution infrared camera. Obtained 2D images are substantially influenced by the temperature of the apparatus on the opposite side of the IR camera; a protocol to correct for the the… ▽ More We present spatially resolved measurements of the temperature of a flat liquid water microjet for varying pressures, from vacuum to 100% relative humidity. The entire jet surface is probed in a single shot by a high-resolution infrared camera. Obtained 2D images are substantially influenced by the temperature of the apparatus on the opposite side of the IR camera; a protocol to correct for the thermal background radiation is presented. In vacuum, we observe cooling rates due to water evaporation on the order of 105 K/s. For our system, this corresponds to a temperature decrease of approximately 15 K between upstream and downstream positions of the flowing leaf. Making reasonable assumptions on the absorption of the thermal background radiation in the flatjet we can extend our analysis to infer a thickness map. For a reference system our value for the thickness is in good agreement with the one reported from white light interferometry. △ Less

Submitted 6 April, 2023; originally announced April 2023.

Comments: The following article has been submitted to Structural Dynamics. After it is published, it will be found at Link

Journal ref: Struct. Dyn. 1 May 2023; 10 (3): 034901

Tailoring potentials by simulation-aided design of gate layouts for spin qubit applications

Authors: Inga Seidler, Malte Neul, Eugen Kammerloher, Matthias Künne, Andreas Schmidbauer, Laura Diebel, Arne Ludwig, Julian Ritzmann, Andreas D. Wieck, Dominique Bougeard, Hendrik Bluhm, Lars R. Schreiber

Abstract: Gate-layouts of spin qubit devices are commonly adapted from previous successful devices. As qubit numbers and the device complexity increase, modelling new device layouts and optimizing for yield and performance becomes necessary. Simulation tools from advanced semiconductor industry need to be adapted for smaller structure sizes and electron numbers. Here, we present a general approach for elect… ▽ More Gate-layouts of spin qubit devices are commonly adapted from previous successful devices. As qubit numbers and the device complexity increase, modelling new device layouts and optimizing for yield and performance becomes necessary. Simulation tools from advanced semiconductor industry need to be adapted for smaller structure sizes and electron numbers. Here, we present a general approach for electrostatically modelling new spin qubit device layouts, considering gate voltages, heterostructures, reservoirs and an applied source-drain bias. Exemplified by a specific potential, we study the influence of each parameter. We verify our model by indirectly probing the potential landscape of two design implementations through transport measurements. We use the simulations to identify critical design areas and optimize for robustness with regard to influence and resolution limits of the fabrication process. △ Less

Submitted 23 March, 2023; originally announced March 2023.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. Applied 20, 044058 (2023)

Flopping-mode electron dipole spin resonance in the strong-driving regime

Authors: Julian D. Teske, Friederike Butt, Pascal Cerfontaine, Guido Burkard, Hendrik Bluhm

Abstract: Achieving high fidelity control of spin qubits with conventional electron dipole spin resonance (EDSR) requires large magnetic field gradients of about 1 mT/nm, which also couple the qubit to charge noise, and large drive amplitudes of order 1 mV. The flopping-mode is an alternative method to drive EDSR of an electron in a double quantum dot, where the large displacement between both dots increase… ▽ More Achieving high fidelity control of spin qubits with conventional electron dipole spin resonance (EDSR) requires large magnetic field gradients of about 1 mT/nm, which also couple the qubit to charge noise, and large drive amplitudes of order 1 mV. The flopping-mode is an alternative method to drive EDSR of an electron in a double quantum dot, where the large displacement between both dots increases the driving efficiency. We propose to operate the flopping-mode in the strong-driving regime to use the full magnetic field difference between the two dots. In simulations, the reduced required magnetic field gradients suppress the infidelity contribution of charge noise by more than two orders of magnitude, while providing Rabi frequencies of up to 60 MHz. However, the near degeneracy of the conduction band in silicon introduces a valley degree of freedom that can degrade the performance of the strong-driving mode. This necessitates a valley-dependent pulse optimization and makes operation to the strong-driving regime questionable. △ Less

Submitted 22 August, 2022; originally announced August 2022.

Comments: 18 pages, 10 figures, Source Code at https://github.com/qutech/qopt-applications

Semiconductor membranes for electrostatic exciton trapping in optically addressable quantum transport devices

Authors: Thomas Descamps, Feng Liu, Sebastian Kindel, René Otten, Tobias Hangleiter, Chao Zhao, Mihail Ion Lepsa, Julian Ritzmann, Arne Ludwig, Andreas D. Wieck, Beata E. Kardynał, Hendrik Bluhm

Abstract: Combining the capabilities of gate defined quantum transport devices in GaAs-based heterostructures and of optically addressed self-assembled quantum dots could open broad perspectives for new devices and functionalities. For example, interfacing stationary solid-state qubits with photonic quantum states would open a new pathway towards the realization of a quantum network with extended quantum pr… ▽ More Combining the capabilities of gate defined quantum transport devices in GaAs-based heterostructures and of optically addressed self-assembled quantum dots could open broad perspectives for new devices and functionalities. For example, interfacing stationary solid-state qubits with photonic quantum states would open a new pathway towards the realization of a quantum network with extended quantum processing capacity in each node. While gated devices allow very flexible confinement of electrons or holes, the confinement of excitons without some element of self-assembly is much harder. To address this limitation, we introduce a technique to realize exciton traps in quantum wells via local electric fields by thinning a heterostructure down to a 220 nm thick membrane. We show that mobilities over $1 \times 10^{6}$ cm$^{2}$V$^{-1}$s$^{-1}$ can be retained and that quantum point contacts and Coulomb oscillations can be observed on this structure, which implies that the thinning does not compromise the heterostructure quality. Furthermore, the local lowering of the exciton energy via the quantum-confined Stark effect is confirmed, thus forming exciton traps. These results lay the technological foundations for devices like single photon sources, spin photon interfaces and eventually quantum network nodes in GaAs quantum wells, realized entirely with a top-down fabrication process. △ Less

Submitted 9 November, 2022; v1 submitted 15 July, 2022; originally announced July 2022.

Comments: v2: added missing acknowledgement. v3: fixed typos in acknolwedgement

Conveyor-mode single-electron shuttling in Si/SiGe for a scalable quantum computing architecture

Authors: Inga Seidler, Tom Struck, Ran Xue, Niels Focke, Stefan Trellenkamp, Hendrik Bluhm, Lars R. Schreiber

Abstract: Small spin-qubit registers defined by single electrons confined in Si/SiGe quantum dots operate successfully and connecting these would permit scalable quantum computation. Shuttling the qubit carrying electrons between registers is a natural choice for high-fidelity coherent links provided the overhead of control signals stays moderate. Our proof-of-principle demonstrates shuttling of a single el… ▽ More Small spin-qubit registers defined by single electrons confined in Si/SiGe quantum dots operate successfully and connecting these would permit scalable quantum computation. Shuttling the qubit carrying electrons between registers is a natural choice for high-fidelity coherent links provided the overhead of control signals stays moderate. Our proof-of-principle demonstrates shuttling of a single electron by a propagating wave-potential in an electrostatically defined 420 nm long Si/SiGe quantum-channel. This conveyor-mode shuttling approach requires independent from its length only four sinusoidal control signals. We discuss the tuning of the signal parameters, detect the smoothness of the electron motion enabling the mapping of potential disorder and observe a high single-electron shuttling fidelity of $99.42\pm0.02\,\%$ including a reversal of direction. Our shuttling device can be readily embedded in industrial fabrication of Si/SiGe qubit chips and paves the way to solving the signal-fanout problem for a fully scalable semiconductor quantum-computing architecture. △ Less

Submitted 2 August, 2021; originally announced August 2021.

Comments: 9 pages, 5 figures

Sensing dot with high output swing for scalable baseband readout of spin qubits

Authors: Eugen Kammerloher, Andreas Schmidbauer, Laura Diebel, Inga Seidler, Malte Neul, Matthias Künne, Arne Ludwig, Julian Ritzmann, Andreas Wieck, Dominique Bougeard, Lars R. Schreiber, Hendrik Bluhm

Abstract: A crucial requirement for quantum computing, in particular for scalable quantum computing and error correction, is a fast and high-fidelity qubit readout. For semiconductor based qubits, one limiting factor for local low-power signal amplification, is the output swing of the charge sensor. We demonstrate GaAs and Si/SiGe asymmetric sensing dots (ASDs) specifically designed to provide a significant… ▽ More A crucial requirement for quantum computing, in particular for scalable quantum computing and error correction, is a fast and high-fidelity qubit readout. For semiconductor based qubits, one limiting factor for local low-power signal amplification, is the output swing of the charge sensor. We demonstrate GaAs and Si/SiGe asymmetric sensing dots (ASDs) specifically designed to provide a significantly improved response compared to conventional charge sensing dots. Our ASD design features a strongly decoupled drain reservoir from the sensor dot, which mitigates negative feedback effects found in conventional sensors. This results in a boosted output swing of $3\,\text{mV}$, which exceeds the response in the conventional regime of our device by more than ten times. The enhanced output signal paves the way for employing very low-power readout amplifiers in close proximity to the qubit. △ Less

Submitted 4 May, 2023; v1 submitted 28 July, 2021; originally announced July 2021.

Comments: 9 pages, 8 figures

Roadmap on quantum nanotechnologies

Authors: Arne Laucht, Frank Hohls, Niels Ubbelohde, M Fernando Gonzalez-Zalba, David J Reilly, Søren Stobbe, Tim Schröder, Pasquale Scarlino, Jonne V Koski, Andrew Dzurak, Chih-Hwan Yang, Jun Yoneda, Ferdinand Kuemmeth, Hendrik Bluhm, Jarryd Pla, Charles Hill, Joe Salfi, Akira Oiwa, Juha T Muhonen, Ewold Verhagen, Matthew D LaHaye, Hyun Ho Kim, Adam W Tsen, Dimitrie Culcer, Attila Geresdi , et al. (4 additional authors not shown)

Abstract: Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing qu… ▽ More Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing quantum mechanical effects in condensed matter. These quantum phenomena, in turn, have the potential to revolutionize the way we communicate, compute and probe the nanoscale world. Here, we review developments in key areas of quantum research in light of the nanotechnologies that enable them, with a view to what the future holds. Materials and devices with nanoscale features are used for quantum metrology and sensing, as building blocks for quantum computing, and as sources and detectors for quantum communication. They enable explorations of quantum behaviour and unconventional states in nano- and opto-mechanical systems, low-dimensional systems, molecular devices, nano-plasmonics, quantum electrodynamics, scanning tunnelling microscopy, and more. This rapidly expanding intersection of nanotechnology and quantum science/technology is mutually beneficial to both fields, laying claim to some of the most exciting scientific leaps of the last decade, with more on the horizon. △ Less

Submitted 19 January, 2021; originally announced January 2021.

Comments: Roadmap article with contributed sections and subsections on: 1. Metrology and sensing 2. Quantum light sources, cavities and detectors 3. Quantum computing with spins 4. Nano and opto-mechanics 5. Low-dimensional systems 6. Molecular devices 7. Nanoplasmonics (47 pages, 25 figures). Contains arXiv:1907.02625, arXiv:1907.07087, arXiv:2001.11119, arXiv:2011.13907

Report number: NBI QDev 2021

Journal ref: Nanotechnology 32, 162003 (2021)

Roadmap for gallium arsenide spin qubits

Authors: Ferdinand Kuemmeth, Hendrik Bluhm

Abstract: Gate-defined quantum dots in gallium arsenide (GaAs) have been used extensively for pioneering spin qubit devices due to the relative simplicity of fabrication and favourable electronic properties such as a single conduction band valley, a small effective mass, and stable dopants. GaAs spin qubits are readily produced in many labs and are currently studied for various applications, including entan… ▽ More Gate-defined quantum dots in gallium arsenide (GaAs) have been used extensively for pioneering spin qubit devices due to the relative simplicity of fabrication and favourable electronic properties such as a single conduction band valley, a small effective mass, and stable dopants. GaAs spin qubits are readily produced in many labs and are currently studied for various applications, including entanglement, quantum non-demolition measurements, automatic tuning, multi-dot arrays, coherent exchange coupling, and teleportation. Even while much attention is shifting to other materials, GaAs devices will likely remain a workhorse for proof-of-concept quantum information processing and solid-state experiments. △ Less

Submitted 27 November, 2020; originally announced November 2020.

Comments: This section is part of a roadmap on quantum technologies and comprises 4 pages with 2 figures

Report number: NBI QDEV 2020

Journal ref: Nanotechnology 32, 162003 (2021)

Measurement of back-action from electron spins in a gate defined GaAs double quantum dot coupled to a mesoscopic nuclear spin bath

Authors: Patrick Bethke, Robert P. G. McNeil, Julian Ritzmann, Tim Botzem, Arne Ludwig, Andreas D. Wieck, Hendrik Bluhm

Abstract: Decoherence of a quantum system arising from its interaction with an environment is a key concept for understanding the transition between the quantum and classical world as well as performance limitations in quantum technology applications. The effects of large, weakly coupled environments are often described as a classical, fluctuating field whose dynamics is unaffected by the qubit, whereas a f… ▽ More Decoherence of a quantum system arising from its interaction with an environment is a key concept for understanding the transition between the quantum and classical world as well as performance limitations in quantum technology applications. The effects of large, weakly coupled environments are often described as a classical, fluctuating field whose dynamics is unaffected by the qubit, whereas a fully quantum description still implies some back-action from the qubit on the environment. Here we show direct experimental evidence for such a back-action for an electron-spin-qubit in a GaAs quantum dot coupled to a mesoscopic environment of order $10^6$ nuclear spins. By means of a correlation measurement technique, we detect the back-action of a single qubit-environment interaction whose duration is comparable to the qubit's coherence time, even in such a large system. We repeatedly let the qubit interact with the spin bath and measure its state. Between such cycles, the qubit is reinitialized to different states. The correlations of the measurement outcomes are strongly affected by the intermediate qubit state, which reveals the action of a single electron spin on the nuclear spins. △ Less

Submitted 26 July, 2020; v1 submitted 26 June, 2019; originally announced June 2019.

Comments: 6 pages, 2 figures

Journal ref: Phys. Rev. Lett. 125, 047701 (2020)

Closed-loop control of a GaAs-based singlet-triplet spin qubit with 99.5% gate fidelity and low leakage

Authors: Pascal Cerfontaine, Tim Botzem, Julian Ritzmann, Simon Sebastian Humpohl, Arne Ludwig, Dieter Schuh, Dominique Bougeard, Andreas D. Wieck, Hendrik Bluhm

Abstract: Semiconductor spin qubits have recently seen major advances in coherence time and control fidelities, leading to a single-qubit performance that is on par with other leading qubit platforms. Most of this progress is based on microwave control of single spins in devices made of isotopically purified silicon. For controlling spins, the exchange interaction is an additional key ingredient which poses… ▽ More Semiconductor spin qubits have recently seen major advances in coherence time and control fidelities, leading to a single-qubit performance that is on par with other leading qubit platforms. Most of this progress is based on microwave control of single spins in devices made of isotopically purified silicon. For controlling spins, the exchange interaction is an additional key ingredient which poses new challenges for high-fidelity control. Here, we demonstrate exchange-based single-qubit gates of two-electron spin qubits in GaAs double quantum dots. Using careful pulse optimization and closed-loop tuning, we achieve a randomized benchmarking fidelity of $(99.50 \pm 0.04)\%$ and a leakage rate of $0.13\%$ out of the computational subspace. These results open new perspectives for microwave-free control of singlet-triplet qubits in GaAs and other materials. △ Less

Submitted 22 January, 2021; v1 submitted 12 June, 2019; originally announced June 2019.

Comments: Pascal Cerfontaine and Tim Botzem contributed equally to this work. This article supersedes arXiv:1606.01897. Published version available at https://www.nature.com/articles/s41467-020-17865-3

Journal ref: Nature Communications 11, 4144 (2020)

Self-Consistent Calibration of Quantum Gate Sets

Authors: Pascal Cerfontaine, René Otten, Hendrik Bluhm

Abstract: The precise and automated calibration of quantum gates is a key requirement for building a reliable quantum computer. Unlike errors from decoherence, systematic errors can in principle be completely removed by tuning experimental parameters. Here, we present an iterative calibration routine which can remove systematic gate errors on several qubits. A central ingredient is the construction of pulse… ▽ More The precise and automated calibration of quantum gates is a key requirement for building a reliable quantum computer. Unlike errors from decoherence, systematic errors can in principle be completely removed by tuning experimental parameters. Here, we present an iterative calibration routine which can remove systematic gate errors on several qubits. A central ingredient is the construction of pulse sequences that extract independent indicators for every linearly independent error generator. We show that decoherence errors only moderately degrade the achievable infidelity due to systematic errors. Furthermore, we investigate the convergence properties of our approach by performing simulations for a specific qubit encoded in a pair of spins. Our results indicate that a gate set with 230 gate parameters can be calibrated in about ten iterations, after which incoherent errors limit the gate fidelity. △ Less

Submitted 22 January, 2021; v1 submitted 3 June, 2019; originally announced June 2019.

Comments: 16 pages, 3 figures, 7 tables. Reprinted with permission from Pascal Cerfontaine, René Otten, and Hendrik Bluhm, Physical Review Applied 13, 044071 (2020). Copyright 2020 by the American Physical Society

Journal ref: Physical Review Applied 13, 044071 (2020)

A Machine Learning Approach for Automated Fine-Tuning of Semiconductor Spin Qubits

Authors: Julian D. Teske, Simon Humpohl, René Otten, Patrick Bethke, Pascal Cerfontaine, Jonas Dedden, Arne Ludwig, Andreas D. Wieck, Hendrik Bluhm

Abstract: While spin qubits based on gate-defined quantum dots have demonstrated very favorable properties for quantum computing, one remaining hurdle is the need to tune each of them into a good operating regime by adjusting the voltages applied to electrostatic gates. The automation of these tuning procedures is a necessary requirement for the operation of a quantum processor based on gate-defined quantum… ▽ More While spin qubits based on gate-defined quantum dots have demonstrated very favorable properties for quantum computing, one remaining hurdle is the need to tune each of them into a good operating regime by adjusting the voltages applied to electrostatic gates. The automation of these tuning procedures is a necessary requirement for the operation of a quantum processor based on gate-defined quantum dots, which is yet to be fully addressed. We present an algorithm for the automated fine-tuning of quantum dots, and demonstrate its performance on a semiconductor singlet-triplet qubit in GaAs. The algorithm employs a Kalman filter based on Bayesian statistics to estimate the gradients of the target parameters as function of gate voltages, thus learning the system response. The algorithm's design is focused on the reduction of the number of required measurements. We experimentally demonstrate the ability to change the operation regime of the qubit within 3 to 5 iterations, corresponding to 10 to 15 minutes of lab-time. △ Less

Submitted 8 March, 2019; v1 submitted 7 January, 2019; originally announced January 2019.

High-fidelity gate set for exchange-coupled singlet-triplet qubits

Authors: Pascal Cerfontaine, René Otten, M. A. Wolfe, Patrick Bethke, Hendrik Bluhm

Abstract: In order to enable semiconductor-based quantum computing with many qubits, issues like residual interqubit coupling and constraints from scalable control hardware need to be tackled to retain the high gate fidelities demonstrated in current single-qubit devices. Here, we focus on two exchange-coupled singlet-triplet spin qubits, considering realistic control hardware as well as Coulomb and exchang… ▽ More In order to enable semiconductor-based quantum computing with many qubits, issues like residual interqubit coupling and constraints from scalable control hardware need to be tackled to retain the high gate fidelities demonstrated in current single-qubit devices. Here, we focus on two exchange-coupled singlet-triplet spin qubits, considering realistic control hardware as well as Coulomb and exchange coupling that cannot be fully turned off. Using measured noise spectra, we optimize realistic control pulses and show that two-qubit (single-qubit) gate fidelities of 99.90\% ($\ge 99.69\%$) can be reached in GaAs, while 99.99\% ($\ge 99.95\%$) can be achieved in Si. △ Less

Submitted 22 January, 2021; v1 submitted 3 January, 2019; originally announced January 2019.

Comments: 11 pages, 10 figures, 6 tables. Reprinted with permission from Pascal Cerfontaine, René Otten, M. A. Wolfe, Patrick Bethke, and Hendrik Bluhm, Physical Review B 101, 155311 (2020). Copyright 2020 by the American Physical Society

Journal ref: Physical Review B 101, 155311 (2020)

Transfer of a quantum state from a photonic qubit to a gate-defined quantum dot

Authors: Benjamin Joecker, Pascal Cerfontaine, Federica Haupt, Lars R. Schreiber, Beata E. Kardynał, Hendrik Bluhm

Abstract: Interconnecting well-functioning, scalable stationary qubits and photonic qubits could substantially advance quantum communication applications and serve to link future quantum processors. Here, we present two protocols for transferring the state of a photonic qubit to a single-spin and to a two-spin qubit hosted in gate-defined quantum dots (GDQD). Both protocols are based on using a localized ex… ▽ More Interconnecting well-functioning, scalable stationary qubits and photonic qubits could substantially advance quantum communication applications and serve to link future quantum processors. Here, we present two protocols for transferring the state of a photonic qubit to a single-spin and to a two-spin qubit hosted in gate-defined quantum dots (GDQD). Both protocols are based on using a localized exciton as intermediary between the photonic and the spin qubit. We use effective Hamiltonian models to describe the hybrid systems formed by the the exciton and the GDQDs and apply simple but realistic noise models to analyze the viability of the proposed protocols. Using realistic parameters, we find that the protocols can be completed with a success probability ranging between 85-97%. △ Less

Submitted 16 December, 2018; originally announced December 2018.

Journal ref: Phys. Rev. B 99, 205415 (2019)

An Efficient Algorithm for Automatic Structure Optimization in X-ray Standing-Wave Experiments

Authors: Osman Karslıoğlu, Mathias Gehlmann, Juliane Müller, Slavomir Nemšák, James A. Sethian, Ajith Kaduwela, Hendrik Bluhm, Charles Fadley

Abstract: X-ray standing-wave photoemission experiments involving multilayered samples are emerging as unique probes of the buried interfaces that are ubiquitous in current device and materials research. Such data require for their analysis a structure optimization process comparing experiment to theory that is not straightforward. In this work, we present a new computer program for optimizing the analysis… ▽ More X-ray standing-wave photoemission experiments involving multilayered samples are emerging as unique probes of the buried interfaces that are ubiquitous in current device and materials research. Such data require for their analysis a structure optimization process comparing experiment to theory that is not straightforward. In this work, we present a new computer program for optimizing the analysis of standing-wave data, called SWOPT, that automates this trial-and-error optimization process. The program includes an algorithm that has been developed for computationally expensive problems: so-called black-box simulation optimizations. It also includes a more efficient version of the Yang X-ray Optics Program (YXRO) [Yang, S.-H., Gray, A.X., Kaiser, A.M., Mun, B.S., Sell, B.C., Kortright, J.B., Fadley, C.S., J. Appl. Phys. 113, 1 (2013)] which is about an order of magnitude faster than the original version. Human interaction is not required during optimization. We tested our optimization algorithm on real and hypothetical problems and show that it finds better solutions significantly faster than a random search approach. The total optimization time ranges, depending on the sample structure, from minutes to a few hours on a modern laptop computer, and can be up to 100x faster than a corresponding manual optimization. These speeds make the SWOPT program a valuable tool for realtime analyses of data during synchrotron experiments. △ Less

Submitted 4 July, 2018; originally announced July 2018.

Calculation of tunnel-couplings in open gate-defined disordered quantum dot systems

Authors: Jan Klos, Fabian Hassler, Pascal Cerfontaine, Hendrik Bluhm, Lars R. Schreiber

Abstract: Quantum computation based on semiconductor electron-spin qubits requires high control of tunnel-couplings, both across quantum dots and between the quantum dot and the reservoir. The tunnel-coupling to the reservoir sets the qubit detection and initialization bandwidth for energy-resolved spin-to-charge conversion and is essential to tune single-electron transistors commonly used as charge detecto… ▽ More Quantum computation based on semiconductor electron-spin qubits requires high control of tunnel-couplings, both across quantum dots and between the quantum dot and the reservoir. The tunnel-coupling to the reservoir sets the qubit detection and initialization bandwidth for energy-resolved spin-to-charge conversion and is essential to tune single-electron transistors commonly used as charge detectors. Potential disorder and the increasing complexity of the two-dimensional gate-defined quantum computing devices sets high demands on the gate design and the voltage tuning of the tunnel barriers. We present a Green's formalism approach for the calculation of tunnel-couplings between a quantum dot and a reservoir. Our method takes into account in full detail the two-dimensional electrostatic potential of the quantum dot, the tunnel barrier and reservoir. A Markov approximation is only employed far away from the tunnel barrier region where the density of states is sufficiently large. We calculate the tunnel-coupling including potential disorder effects, which become increasingly important for large-scale silicon-based spin-qubit devices. Studying the tunnel-couplings of a single-electron transistor in Si/SiGe as a showcase, we find that charged defects are the dominant source of disorder leading to variations in the tunnel-coupling of four orders of magnitude. △ Less

Submitted 4 May, 2018; originally announced May 2018.

Comments: 10 pages, 4 figures

Journal ref: Phys. Rev. B 98, 155320 (2018)

A micro-SQUID with dispersive readout for magnetic scanning microscopy

Authors: Farshad Foroughi, Jan-Michael Mol, Tristan Mueller, John R. Kirtley, Kathryn A. Moler, Hendrik Bluhm

Abstract: We have designed and characterized a micro-SQUID with dispersive readout for use in low temperature scanning probe microscopy systems. The design features a capacitively shunted RF SQUID with a tunable resonance frequency from 5 to 12 GHz, micrometer spatial resolution and integrated superconducting coils for local application of magnetic fields. The SQUID is operated as a nonlinear oscillator wit… ▽ More We have designed and characterized a micro-SQUID with dispersive readout for use in low temperature scanning probe microscopy systems. The design features a capacitively shunted RF SQUID with a tunable resonance frequency from 5 to 12 GHz, micrometer spatial resolution and integrated superconducting coils for local application of magnetic fields. The SQUID is operated as a nonlinear oscillator with a flux- and power-dependent resonance frequency. Measurements for device characterization and noise benchmarking were carried out at 4 K. The measured flux noise above 10 kHz at 4 K is $80\;\mathrm{n}Φ_0 \mathrm{Hz}^{-1/2}$ at a bandwidth of 200 MHz. Estimations suggest that one can benefit from parametric gain based on inherent nonlinearity of the Josephson junction and reduce the flux noise to $30\;\mathrm{n}Φ_0\mathrm{Hz}^{-1/2}$ at 100 mK, which corresponds to $7.5\;\mathrm{μ_B Hz^{-1/2}}$ for a magnetic moment located at the center of the pickup loop. △ Less

Submitted 20 March, 2018; originally announced March 2018.

Journal ref: Appl. Phys. Lett. 112, 252601 (2018)

Characterization of free standing InAs quantum membranes by standing wave hard x-ray photoemission spectroscopy

Authors: G. Conti, S. Nemšák, C. -T. Kuo, M. Gehlmann, C. Conlon, A. Keqi, A. Rattanachata, O. Karslıoğlu, J. Mueller, J. Sethian, H. Bluhm, J. E. Rault, J. P. Rueff, H. Fang, A. Javey, C. S. Fadley

Abstract: Free-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a (Si/Mo) multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS), and by standing-wave HXPS (SW-HXPS). Information on the chemical composition and on the chemical states of the elements within the nanoribbons was obtained by HXPS and on the quantitative depth profiles by SW-HXPS. By co… ▽ More Free-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a (Si/Mo) multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS), and by standing-wave HXPS (SW-HXPS). Information on the chemical composition and on the chemical states of the elements within the nanoribbons was obtained by HXPS and on the quantitative depth profiles by SW-HXPS. By comparing the experimental SW-HXPS rocking curves to x-ray optical calculations, the chemical depth profile of the InAs(QM) and its interfaces were quantitatively derived with angstrom precision. We determined that: i) the exposure to air induced the formation of an InAsO$_4$ layer on top of the stoichiometric InAs(QM); ii) the top interface between the air-side InAsO$_4$ and the InAs(QM) is not sharp, indicating that interdiffusion occurs between these two layers; iii) the bottom interface between the InAs(QM) and the native oxide SiO$_2$ on top of the (Si/Mo) substrate is abrupt. In addition, the valence band offset (VBO) between the InAs(QM) and the SiO$_2$/(Si/Mo) substrate was determined by HXPS. The value of $VBO = 0.2 \pm 0.04$ eV is in good agreement with literature results obtained by electrical characterization, giving a clear indication of the formation of a well-defined and abrupt InAs/SiO$_2$ heterojunction. We have demonstrated that HXPS and SW-HXPS are non-destructive, powerful methods for characterizing interfaces and for providing chemical depth profiles of nanostructures, quantum membranes, and 2D layered materials. △ Less

Submitted 16 January, 2018; originally announced January 2018.

Comments: three figures

Tuning methods for semiconductor spin--qubits

Authors: Tim Botzem, Michael D. Shulman, Sandra Foletti, Shannon P. Harvey, Oliver E. Dial, Patrick Bethke, Pascal Cerfontaine, Robert P. G. McNeil, Diana Mahalu, Vladimir Umansky, Arne Ludwig, Andreas Wieck, Dieter Schuh, Dominique Bougeard, Amir Yacoby, Hendrik Bluhm

Abstract: We present efficient methods to reliably characterize and tune gate-defined semiconductor spin qubits. Our methods are designed to target the tuning procedures of semiconductor double quantum dot in GaAs heterostructures, but can easily be adapted to other quantum-dot-like qubit systems. These tuning procedures include the characterization of the inter-dot tunnel coupling, the tunnel coupling to t… ▽ More We present efficient methods to reliably characterize and tune gate-defined semiconductor spin qubits. Our methods are designed to target the tuning procedures of semiconductor double quantum dot in GaAs heterostructures, but can easily be adapted to other quantum-dot-like qubit systems. These tuning procedures include the characterization of the inter-dot tunnel coupling, the tunnel coupling to the surrounding leads and the identification of the various fast initialization points for the operation of the qubit. Since semiconductor-based spin qubits are compatible with standard semiconductor process technology and hence promise good prospects of scalability, the challenge of efficiently tuning the dot's parameters will only grow in the near future, once the multi-qubit stage is reached. With the anticipation of being used as the basis for future automated tuning protocols, all measurements presented here are fast-to-execute and easy-to-analyze characterization methods. They result in quantitative measures of the relevant qubit parameters within a couple of seconds, and require almost no human interference. △ Less

Submitted 11 January, 2018; originally announced January 2018.

Journal ref: Phys. Rev. Applied 10, 054026 (2018)

Interfacing spin qubits in quantum dots and donors - hot, dense and coherent

Authors: L. M. K. Vandersypen, H. Bluhm, J. S. Clarke, A. S. Dzurak, R. Ishihara, A. Morello, D. J. Reilly, L. R. Schreiber, M. Veldhorst

Abstract: Semiconductor spins are one of the few qubit realizations that remain a serious candidate for the implementation of large-scale quantum circuits. Excellent scalability is often argued for spin qubits defined by lithography and controlled via electrical signals, based on the success of conventional semiconductor integrated circuits. However, the wiring and interconnect requirements for quantum circ… ▽ More Semiconductor spins are one of the few qubit realizations that remain a serious candidate for the implementation of large-scale quantum circuits. Excellent scalability is often argued for spin qubits defined by lithography and controlled via electrical signals, based on the success of conventional semiconductor integrated circuits. However, the wiring and interconnect requirements for quantum circuits are completely different from those for classical circuits, as individual DC, pulsed and in some cases microwave control signals need to be routed from external sources to every qubit. This is further complicated by the requirement that these spin qubits currently operate at temperatures below 100 mK. Here we review several strategies that are considered to address this crucial challenge in scaling quantum circuits based on electron spin qubits. Key assets of spin qubits include the potential to operate at 1 to 4 K, the high density of quantum dots or donors combined with possibilities to space them apart as needed, the extremely long spin coherence times, and the rich options for integration with classical electronics based on the same technology. △ Less

Submitted 18 December, 2016; originally announced December 2016.

Comments: 13 pages, 4 figures

Journal ref: npj Quantum Information 3, 34 (2017)

Feedback-tuned noise-resilient gates for encoded spin qubits

Authors: Pascal Cerfontaine, Tim Botzem, Simon Sebastian Humpohl, Dieter Schuh, Dominique Bougeard, Hendrik Bluhm

Abstract: Two level quantum mechanical systems like spin 1/2 particles lend themselves as a natural qubit implementation. However, encoding a single qubit in several spins reduces the resources necessary for qubit control and can protect from decoherence channels. While several varieties of such encoded spin qubits have been implemented, accurate control remains challenging, and leakage out of the subspace… ▽ More Two level quantum mechanical systems like spin 1/2 particles lend themselves as a natural qubit implementation. However, encoding a single qubit in several spins reduces the resources necessary for qubit control and can protect from decoherence channels. While several varieties of such encoded spin qubits have been implemented, accurate control remains challenging, and leakage out of the subspace of valid qubit states is a potential issue. Here, we realize high-fidelity single qubit operations for a qubit encoded in two electron spins in GaAs quantum dots by iterative tuning of the all-electrical control pulses. Using randomized benchmarking, we find an average gate fidelity of $\mathcal{F} = (98.5 \pm 0.1)\,\%$ and determine the leakage rate between the computational subspace and other states to $\mathcal{L} = (0.4\pm0.1)\,\%$. These results also demonstrate that high fidelity gates can be realized even in the presence of nuclear spins as in III-V semiconductors. △ Less

Submitted 6 June, 2016; originally announced June 2016.

Comments: Pascal Cerfontaine and Tim Botzem contributed equally to this work

Exchange-interaction of two spin qubits mediated by a superconductor

Authors: Fabian Hassler, Gianluigi Catelani, Hendrik Bluhm

Abstract: Entangling two quantum bits by letting them interact is the crucial requirements for building a quantum processor. For qubits based on the spin of the electron, these two-qubit gates are typically performed by exchange interaction of the electrons captured in two nearby quantum dots. Since the exchange interaction relies on tunneling of the electrons, the range of interaction for conventional appr… ▽ More Entangling two quantum bits by letting them interact is the crucial requirements for building a quantum processor. For qubits based on the spin of the electron, these two-qubit gates are typically performed by exchange interaction of the electrons captured in two nearby quantum dots. Since the exchange interaction relies on tunneling of the electrons, the range of interaction for conventional approaches is severely limited as the tunneling amplitude decays exponentially with the length of the tunneling barrier. Here, we present a novel approach to couple two spin qubits via a superconducting coupler. In essence, the superconducting coupler provides a tunneling barrier for the electrons which can be tuned with exquisite precision. We show that as a result exchange couplings over a distance of several microns become realistic, thus enabling flexible designs of multi-qubit systems. △ Less

Submitted 21 September, 2015; originally announced September 2015.

Comments: 6 pages, 2 figures

Journal ref: Phys. Rev. B 92, 235401 (2015)

Quadrupolar and anisotropy effects on dephasing in two-electron spin qubits in GaAs

Authors: Tim Botzem, Robert P. G. McNeil, Dieter Schuh, Dominique Bougeard, Hendrik Bluhm

Abstract: Understanding the decoherence of electron spins in semiconductors due to their interaction with nuclear spins is of fundamental interest as they realize the central spin model and of practical importance for using electron spins as qubits. Interesting effects arise from the quadrupolar interaction of nuclear spins with electric field gradients, which have been shown to suppress diffusive nuclear s… ▽ More Understanding the decoherence of electron spins in semiconductors due to their interaction with nuclear spins is of fundamental interest as they realize the central spin model and of practical importance for using electron spins as qubits. Interesting effects arise from the quadrupolar interaction of nuclear spins with electric field gradients, which have been shown to suppress diffusive nuclear spin dynamics. One might thus expect them to enhance electron spin coherence. Here we show experimentally that for gate-defined GaAs quantum dots, quadrupolar broadening of the nuclear Larmor precession can also reduce electron spin coherence due to faster decorrelation of transverse nuclear fields. However, this effect can be eliminated for appropriate field directions. Furthermore, we observe an additional modulation of spin coherence that can be attributed to an anisotropic electronic $g$-tensor. These results complete our understanding of dephasing in gated quantum dots and point to mitigation strategies. They may also help to unravel unexplained behaviour in related systems such as self-assembled quantum dots and III-V nanowires. △ Less

Submitted 20 August, 2015; originally announced August 2015.

Comments: 6 pages, 4 figures

Narrowing of the Overhauser field distribution by feedback-enhanced dynamic nuclear polarization

Authors: Stefanie Tenberg, Robert P. G. McNeil, Sebastian Rubbert, Hendrik Bluhm

Abstract: In many electron spin qubit systems coherent control is impaired by the fluctuating nuclear spin bath of the host material. Previous experiments have shown dynamic nuclear polarization with feedback to significantly prolong the inhomogeneous dephasing time $T_2^*$ by narrowing the distribution of nuclear Overhauser field fluctuations. We present a model relating the achievable narrowing of the Ove… ▽ More In many electron spin qubit systems coherent control is impaired by the fluctuating nuclear spin bath of the host material. Previous experiments have shown dynamic nuclear polarization with feedback to significantly prolong the inhomogeneous dephasing time $T_2^*$ by narrowing the distribution of nuclear Overhauser field fluctuations. We present a model relating the achievable narrowing of the Overhauser field to both the pump rate and the noise magnitude and find reasonable agreement with experimental data. It shows that former experiments on gated GaAs quantum dots were limited by the pump rate of the pumping mechanism used. Here we propose an alternative feedback scheme using electron dipole spin resonance. Sequentially applying two ac electric fields with frequencies slightly detuned from the desired Larmor frequency results in a pump curve with a stable fixed point. Our model predicts that $T_2^*$ values on the order of microseconds can be achieved. △ Less

Submitted 23 March, 2015; originally announced March 2015.

Comments: 4 figures

Journal ref: Phys. Rev. B 92, 195428 (2015)

Site-specific probing of charge transfer dynamics in organic photovoltaics

Authors: Tiberiu Arion, Stefan Nepp, Friedrich Roth, Andrey Shavorskiy, Hendrik Bluhm, Zahid Hussain, Oliver Gessner, Wolfgang Eberhardt

Abstract: We report the site-specific probing of charge-transfer dynamics in a prototype system for organic photovoltaics (OPV) by picosecond time-resolved X-ray photoelectron spectroscopy. A layered system consisting of approximately two monolayers of C$_{60}$ deposited on top of a thin film of Copper-Phthalocyanine (CuPC) is excited by an optical pump pulse and the induced electronic dynamics are probed w… ▽ More We report the site-specific probing of charge-transfer dynamics in a prototype system for organic photovoltaics (OPV) by picosecond time-resolved X-ray photoelectron spectroscopy. A layered system consisting of approximately two monolayers of C$_{60}$ deposited on top of a thin film of Copper-Phthalocyanine (CuPC) is excited by an optical pump pulse and the induced electronic dynamics are probed with 590 eV X-ray pulses. Charge transfer from the electron donor (CuPC) to the acceptor (C$_{60}$) and subsequent charge carrier dynamics are monitored by recording the time-dependent C 1$s$ core level photoemission spectrum of the system. The arrival of electrons in the C$_{60}$ layer is readily observed as a completely reversible, transient shift of the C$_{60}$ associated C 1$s$ core level, while the C 1$s$ level of the CuPC remains unchanged. The capability to probe charge transfer and recombination dynamics in OPV assemblies directly in the time domain and from the perspective of well-defined domains is expected to open additional pathways to better understand and optimize the performance of this emerging technology. △ Less

Submitted 18 March, 2015; originally announced March 2015.

Journal ref: Appl. Phys. Lett. 106, 121602 (2015)

Fault-Tolerant Quantum Computation for Singlet-Triplet Qubits with Leakage Errors

Authors: Sebastian Mehl, Hendrik Bluhm, David P. DiVincenzo

Abstract: We describe and analyze leakage errors of singlet-triplet qubits. Even though leakage errors are a natural problem for spin qubits encoded using quantum dot arrays, they have obtained little attention in previous studies. We describe the realization of leakage correction protocols that can be implemented together with the quantum error correction protocol of the surface code. Furthermore we constr… ▽ More We describe and analyze leakage errors of singlet-triplet qubits. Even though leakage errors are a natural problem for spin qubits encoded using quantum dot arrays, they have obtained little attention in previous studies. We describe the realization of leakage correction protocols that can be implemented together with the quantum error correction protocol of the surface code. Furthermore we construct explicit leakage reduction units that need, in the ideal setup, as few as three manipulation steps. Our study shows that leakage errors can be corrected without the need of measurements and at the cost of only a few additional ancilla qubits and gate operations compared to standard quantum error correction codes. △ Less

Submitted 23 February, 2015; v1 submitted 22 December, 2014; originally announced December 2014.

Comments: 7+ pages, 5 figures

Journal ref: Phys. Rev. B 91, 085419 (2015)

Characterization of S-T$_+$ Transition Dynamics via Correlation Measurements

Authors: Christian Dickel, Sandra Foletti, Vladimir Umansky, Hendrik Bluhm

Abstract: Nuclear spins are an important source of dephasing for electron spin qubits in GaAs quantum dots. Most studies of their dynamics have focused on the relatively slow longitudinal polarization. We show, based on a semiclassical model and experimentally, that the dynamics of the transverse hyperfine field can be probed by correlating individual Landau-Zener sweeps across the S-T$_+$ transition of a t… ▽ More Nuclear spins are an important source of dephasing for electron spin qubits in GaAs quantum dots. Most studies of their dynamics have focused on the relatively slow longitudinal polarization. We show, based on a semiclassical model and experimentally, that the dynamics of the transverse hyperfine field can be probed by correlating individual Landau-Zener sweeps across the S-T$_+$ transition of a two-electron spin qubit. The relative Larmor precession of different nuclear spin species leads to oscillations in these correlations, whose decay arises from dephasing of the nuclei. In the presence of spin orbit coupling, oscillations with the absolute Larmor frequencies whose amplitude reflects the spin orbit coupling strength are expected. △ Less

Submitted 15 December, 2014; originally announced December 2014.

Comments: 5 pages, 3 figures

Charge-noise tolerant exchange gates of singlet-triplet qubits in asymmetric double quantum dots

Authors: Tuukka Hiltunen, Hendrik Bluhm, Sebastian Mehl, Ari Harju

Abstract: In the semi-conductor double quantum dot singlet-triplet qubit architecture, the decoherence caused by the qubit's charge environment poses a serious obstacle in the way towards large scale quantum computing. The effects of the charge decoherence can be mitigated by operating the qubit in the so called sweet spot regions where it is insensitive to electrical noise. In this paper, we propose single… ▽ More In the semi-conductor double quantum dot singlet-triplet qubit architecture, the decoherence caused by the qubit's charge environment poses a serious obstacle in the way towards large scale quantum computing. The effects of the charge decoherence can be mitigated by operating the qubit in the so called sweet spot regions where it is insensitive to electrical noise. In this paper, we propose singlet-triplet qubits based on two quantum dots of different sizes. Such asymmetric double dot systems allow the implementation of exchange gates with controllable exchange splitting $J$ operated in the doubly occupied charge region of the larger dot, where the qubit has high resilience to charge noise. In the larger dot, $J$ can be quenched to a value smaller than the intra-dot tunneling using magnetic fields, while the smaller dot and its larger splitting can be used in the projective readout of the qubit. △ Less

Submitted 4 December, 2014; originally announced December 2014.

Role of Self-Assembled Monolayers on Improved Electrical Stability of Amorphous In-Ga-Zn-O Thin-Film Transistors

Authors: Xiaosong Du, Brendan T. Flynn, Joshua R. Motley, William F. Stickle, Hendrik Bluhm, Gregory S. Herman

Abstract: Self-assembled monolayers (SAMs) have been used to improve both the positive and negative bias-stress stability of amorphous indium gallium zinc oxide (IGZO) bottom gate thin film transistors (TFTs). N-hexylphosphonic acid (HPA) and fluorinated hexylphosphonic acid (FPA) SAMs adsorbed on IGZO back channel surfaces were shown to significantly reduce bias stress turn-on voltage shifts compared to IG… ▽ More Self-assembled monolayers (SAMs) have been used to improve both the positive and negative bias-stress stability of amorphous indium gallium zinc oxide (IGZO) bottom gate thin film transistors (TFTs). N-hexylphosphonic acid (HPA) and fluorinated hexylphosphonic acid (FPA) SAMs adsorbed on IGZO back channel surfaces were shown to significantly reduce bias stress turn-on voltage shifts compared to IGZO back channel surfaces with no SAMs. FPA was found to have a lower surface energy and lower packing density than HPA, as well as lower bias stress turn-on voltage shifts. The improved stability of IGZO TFTs with SAMs can be primarily attributed to a reduction in molecular adsorption of contaminants on the IGZO back channel surface and minimal trapping states present with phosphonic acid binding to the IGZO surface. △ Less

Submitted 1 August, 2014; originally announced August 2014.

Comments: 27 pages, 6 figures

Journal ref: ECS J. Solid State Sci. Technol. 2014 3(9): Q3045-Q3049

Two-Qubit Couplings of Singlet-Triplet Qubits Mediated by One Quantum State

Authors: Sebastian Mehl, Hendrik Bluhm, David P. DiVincenzo

Abstract: We describe high-fidelity entangling gates between singlet-triplet qubits (STQs) which are coupled via one quantum state (QS). The QS can be provided by a quantum dot itself or by another confined system. The orbital energies of the QS are tunable using an electric gate close to the QS, which changes the interactions between the STQs independent of their single-qubit parameters. Short gating seque… ▽ More We describe high-fidelity entangling gates between singlet-triplet qubits (STQs) which are coupled via one quantum state (QS). The QS can be provided by a quantum dot itself or by another confined system. The orbital energies of the QS are tunable using an electric gate close to the QS, which changes the interactions between the STQs independent of their single-qubit parameters. Short gating sequences exist for the controlled NOT (CNOT) operations. We show that realistic quantum dot setups permit excellent entangling operations with gate infidelities below $10^{-3}$, which is lower than the quantum error correction threshold of the surface code. We consider limitations from fabrication errors, hyperfine interactions, spin-orbit interactions, and charge noise in GaAs and Si heterostructures. △ Less

Submitted 5 August, 2014; v1 submitted 12 March, 2014; originally announced March 2014.

Comments: 12 pages, 6 figures

Journal ref: Phys. Rev. B 90, 045404 (2014)

Distinguishing Quantum and Classical Baths via Correlation Measurements

Authors: Thomas Fink, Hendrik Bluhm

Abstract: Investigations of quantum mechanical effects in macroscopic systems are of great interest to shed light onto the question where and how the transition to the classical world appears. It is also of practical relevance to determine if a bath dephasing a qubit can be described classically or requires a quantum mechanical treatment. We propose a measurement scheme to detect quantum backaction via corr… ▽ More Investigations of quantum mechanical effects in macroscopic systems are of great interest to shed light onto the question where and how the transition to the classical world appears. It is also of practical relevance to determine if a bath dephasing a qubit can be described classically or requires a quantum mechanical treatment. We propose a measurement scheme to detect quantum backaction via correlation measurements to answer this question for a bath coupled to a single qubit. The presence of backaction leads to a dependence of correlations of subsequent initialization-evolution-readout cycles on how the qubit is manipulated in between. We compute the autocorrelation function for both an instructive spin model and the realistic case of an electron spin coupled to a bath of $10^6$ nuclear spins, as found in gated GaAs quantum dots, and show that backaction from the qubit onto the nuclear spin bath should be detectable even in such a large system. △ Less

Submitted 2 February, 2014; originally announced February 2014.

Electrometry Using Coherent Exchange Oscillations in a Singlet-Triplet-Qubit

Authors: O. E. Dial, M. D. Shulman, S. P. Harvey, H. Bluhm, V. Umansky, A. Yacoby

Abstract: Two level systems that can be reliably controlled and measured hold promise in both metrology and as qubits for quantum information science (QIS). When prepared in a superposition of two states and allowed to evolve freely, the state of the system precesses with a frequency proportional to the splitting between the states. In QIS,this precession forms the basis for universal control of the qubit,a… ▽ More Two level systems that can be reliably controlled and measured hold promise in both metrology and as qubits for quantum information science (QIS). When prepared in a superposition of two states and allowed to evolve freely, the state of the system precesses with a frequency proportional to the splitting between the states. In QIS,this precession forms the basis for universal control of the qubit,and in metrology the frequency of the precession provides a sensitive measurement of the splitting. However, on a timescale of the coherence time, $T_2$, the qubit loses its quantum information due to interactions with its noisy environment, causing qubit oscillations to decay and setting a limit on the fidelity of quantum control and the precision of qubit-based measurements. Understanding how the qubit couples to its environment and the dynamics of the noise in the environment are therefore key to effective QIS experiments and metrology. Here we show measurements of the level splitting and dephasing due to voltage noise of a GaAs singlet-triplet qubit during exchange oscillations. Using free evolution and Hahn echo experiments we probe the low frequency and high frequency environmental fluctuations, respectively. The measured fluctuations at high frequencies are small, allowing the qubit to be used as a charge sensor with a sensitivity of $2 \times 10^{-8} e/\sqrt{\mathrm{Hz}}$, two orders of magnitude better than the quantum limit for an RF single electron transistor (RF-SET). We find that the dephasing is due to non-Markovian voltage fluctuations in both regimes and exhibits an unexpected temperature dependence. Based on these measurements we provide recommendations for improving $T_2$ in future experiments, allowing for higher fidelity operations and improved charge sensitivity. △ Less

Submitted 7 April, 2013; v1 submitted 9 August, 2012; originally announced August 2012.

Journal ref: PRL 110, 146804 (2013)

Noise Spectroscopy Using Correlations of Single-Shot Qubit Readout

Authors: Thomas Fink, Hendrik Bluhm

Abstract: A better understanding of the noise causing qubit decoherence is crucial for improving qubit performance. The noise spectrum affecting the qubit may be extracted by measuring dephasing under the application of pulse sequences but requires accurate qubit control and sufficiently long relaxation times, which are not always available. Here, we describe an alternative method to extract the spectrum fr… ▽ More A better understanding of the noise causing qubit decoherence is crucial for improving qubit performance. The noise spectrum affecting the qubit may be extracted by measuring dephasing under the application of pulse sequences but requires accurate qubit control and sufficiently long relaxation times, which are not always available. Here, we describe an alternative method to extract the spectrum from correlations of single-shot measurement outcomes of successive free induction decays. This method only requires qubit initialization and readout with a moderate fidelity and also allows independent tuning of both the overall sensitivity and the frequency region over which it is sensitive. Thus, it is possible to maintain a good detection contrast over a very wide frequency range. We discuss using our method for measuring both $1/f$ noise and the fluctuation spectrum of the nuclear bath of GaAs spin qubits. △ Less

Submitted 9 January, 2013; v1 submitted 30 July, 2012; originally announced July 2012.

Comments: 5 pages, 3 figures

Demonstration of Entanglement of Electrostatically Coupled Singlet-Triplet Qubits

Authors: Michael D. Shulman, Oliver E. Dial, Shannon P. Harvey, Hendrik Bluhm, Vladimir Umansky, Amir Yacoby

Abstract: Quantum computers have the potential to solve certain interesting problems significantly faster than classical computers. To exploit the power of a quantum computation it is necessary to perform inter-qubit operations and generate entangled states. Spin qubits are a promising candidate for implementing a quantum processor due to their potential for scalability and miniaturization. However, their w… ▽ More Quantum computers have the potential to solve certain interesting problems significantly faster than classical computers. To exploit the power of a quantum computation it is necessary to perform inter-qubit operations and generate entangled states. Spin qubits are a promising candidate for implementing a quantum processor due to their potential for scalability and miniaturization. However, their weak interactions with the environment, which leads to their long coherence times, makes inter-qubit operations challenging. We perform a controlled two-qubit operation between singlet-triplet qubits using a dynamically decoupled sequence that maintains the two-qubit coupling while decoupling each qubit from its fluctuating environment. Using state tomography we measure the full density matrix of the system and determine the concurrence and the fidelity of the generated state, providing proof of entanglement. △ Less

Submitted 8 February, 2012; originally announced February 2012.

Journal ref: Science 336, 202 (2012)

Relaxation and Readout Visibility of a Singlet-Triplet Qubit in an Overhauser Field Gradient

Authors: C. Barthel, J. Medford, H. Bluhm, A. Yacoby, C. M. Marcus, M. P. Hanson, A. C. Gossard

Abstract: Using single-shot charge detection in a GaAs double quantum dot, we investigate spin relaxation time T_1 and readout visibility of a two-electron singlet-triplet qubit following single-electron dynamic nuclear polarization (DNP). For magnetic fields up to 2 T, the DNP cycle is in all cases found to increase Overhauser field gradients, which in turn decrease T_1 and consequently reduce readout visi… ▽ More Using single-shot charge detection in a GaAs double quantum dot, we investigate spin relaxation time T_1 and readout visibility of a two-electron singlet-triplet qubit following single-electron dynamic nuclear polarization (DNP). For magnetic fields up to 2 T, the DNP cycle is in all cases found to increase Overhauser field gradients, which in turn decrease T_1 and consequently reduce readout visibility. This effect was previously attributed to a suppression of singlet-triplet dephasing under a similar DNP cycle. A model describing relaxation after singlet-triplet mixing agrees well with experiment. Effects of pulse bandwidth on visibility are also investigated. △ Less

Submitted 21 August, 2011; originally announced August 2011.

Journal ref: Phys. Rev. B 85, 035306 (2012)

Semi-classical model for the dephasing of a two-electron spin qubit coupled to a coherently evolving nuclear spin bath

Authors: Izhar Neder, Mark S. Rudner, Hendrik Bluhm, Sandra Foletti, Bertrand I. Halperin, Amir Yacoby

Abstract: We study electron spin decoherence in a two-electron double quantum dot due to the hyperfine interaction, under spin-echo conditions as studied in recent experiments. We develop a semi-classical model for the interaction between the electron and nuclear spins, in which the time-dependent Overhauser fields induced by the nuclear spins are treated as classical vector variables. Comparison of the mod… ▽ More We study electron spin decoherence in a two-electron double quantum dot due to the hyperfine interaction, under spin-echo conditions as studied in recent experiments. We develop a semi-classical model for the interaction between the electron and nuclear spins, in which the time-dependent Overhauser fields induced by the nuclear spins are treated as classical vector variables. Comparison of the model with experimentally-obtained echo signals allows us to quantify the contributions of various processes such as coherent Larmor precession and spin diffusion to the nuclear spin evolution. △ Less

Submitted 5 September, 2011; v1 submitted 24 March, 2011; originally announced March 2011.

Comments: 14 Pages, some equations were corrected; Published July 27, 2011

Journal ref: Phys. Rev. B 84, 035441 (2011)

Phenomenological Study of Decoherence in Solid-State Spin Qubits due to Nuclear Spin Diffusion

Authors: M. J. Biercuk, H. Bluhm

Abstract: We present a study of the prospects for coherence preservation in solid-state spin qubits using dynamical decoupling protocols. Recent experiments have provided the first demonstrations of multipulse dynamical decoupling sequences in this qubit system, but quantitative analyses of potential coherence improvements have been hampered by a lack of concrete knowledge of the relevant noise processes. W… ▽ More We present a study of the prospects for coherence preservation in solid-state spin qubits using dynamical decoupling protocols. Recent experiments have provided the first demonstrations of multipulse dynamical decoupling sequences in this qubit system, but quantitative analyses of potential coherence improvements have been hampered by a lack of concrete knowledge of the relevant noise processes. We present simulations of qubit coherence under the application of arbitrary dynamical decoupling pulse sequences based on an experimentally validated semiclassical model. This phenomenological approach bundles the details of underlying noise processes into a single experimentally relevant noise power spectral density. Our results show that the dominant features of experimental measurements in a two-electron singlet-triplet spin qubit can be replicated using a $1/ω^{2}$ noise power spectrum associated with nuclear-spin-flips in the host material. Beginning with this validation we address the effects of nuclear programming, high-frequency nuclear-spin dynamics, and other high-frequency classical noise sources, with conjectures supported by physical arguments and microscopic calculations where relevant. Our results provide expected performance bounds and identify diagnostic metrics that can be measured experimentally in order to better elucidate the underlying nuclear spin dynamics. △ Less

Submitted 30 January, 2011; v1 submitted 26 January, 2011; originally announced January 2011.

Comments: Updated References. Related articles at: http://www.physics.usyd.edu.au/~mbiercuk/Publications.html

Universal quantum control of two-electron spin quantum bits using dynamic nuclear polarization

Authors: Sandra Foletti, Hendrik Bluhm, Diana Mahalu, Vladimir Umansky, Amir Yacoby

Abstract: One fundamental requirement for quantum computation is to perform universal manipulations of quantum bits at rates much faster than the qubit's rate of decoherence. Recently, fast gate operations have been demonstrated in logical spin qubits composed of two electron spins where the rapid exchange of the two electrons permits electrically controllable rotations around one axis of the qubit. However… ▽ More One fundamental requirement for quantum computation is to perform universal manipulations of quantum bits at rates much faster than the qubit's rate of decoherence. Recently, fast gate operations have been demonstrated in logical spin qubits composed of two electron spins where the rapid exchange of the two electrons permits electrically controllable rotations around one axis of the qubit. However, universal control of the qubit requires arbitrary rotations around at least two axes. Here we show that by subjecting each electron spin to a magnetic field of different magnitude we achieve full quantum control of the two-electron logical spin qubit with nanosecond operation times. Using a single device, a magnetic field gradient of several hundred milliTesla is generated and sustained using dynamic nuclear polarization of the underlying Ga and As nuclei. Universal control of the two-electron qubit is then demonstrated using quantum state tomography. The presented technique provides the basis for single and potentially multiple qubit operations with gate times that approach the threshold required for quantum error correction. △ Less

Submitted 27 September, 2010; originally announced September 2010.

Comments: 11 pages, 4 figures. Supplementary Material included as ancillary file

Journal ref: Nature Physics 5, 903-908 (2009)

Fluxoid fluctuations in mesoscopic superconducting rings

Authors: Julie A. Bert, Nicholas C. Koshnick, Hendrik Bluhm, Kathryn A. Moler

Abstract: Rings are a model system for studying phase coherence in one dimension. Superconducting rings have states with uniform phase windings that are integer multiples of 2$π$ called fluxoid states. When the energy difference between these fluxoid states is of order the temperature so that phase slips are energetically accessible, several states contribute to the ring's magnetic response to a flux thread… ▽ More Rings are a model system for studying phase coherence in one dimension. Superconducting rings have states with uniform phase windings that are integer multiples of 2$π$ called fluxoid states. When the energy difference between these fluxoid states is of order the temperature so that phase slips are energetically accessible, several states contribute to the ring's magnetic response to a flux threading the ring in thermal equilibrium and cause a suppression or downturn in the ring's magnetic susceptibility as a function of temperature. We review the theoretical framework for superconducting fluctuations in rings including a model developed by Koshnick$^1$ which includes only fluctuations in the ring's phase winding number called fluxoid fluctuations and a complete model by von Oppen and Riedel$^2$ that includes all thermal fluctuations in the Ginzburg-Landau framework. We show that for sufficiently narrow and dirty rings the two models predict a similar susceptibility response with a slightly shifted Tc indicating that fluxoid fluctuations are dominant. Finally we present magnetic susceptibility data for rings with different physical parameters which demonstrate the applicability of our models. The susceptibility data spans a region in temperature where the ring transitions from a hysteretic to a non hysteretic response to a periodic applied magnetic field. The magnetic susceptibility data, taken where transitions between fluxoid states are slow compared to the measurement time scale and the ring response was hysteretic, decreases linearly with increasing temperature resembling a mean field response with no fluctuations. At higher temperatures where fluctuations begin to play a larger role a crossover occurs and the non-hysteretic data shows a fluxoid fluctuation induced suppression of diamagnetism below the mean field response that agrees well with the models. △ Less

Submitted 27 August, 2010; originally announced August 2010.

Journal ref: Phys. Rev. B 84, 134523 (2011)

Long coherence of electron spins coupled to a nuclear spin bath

Authors: Hendrik Bluhm, Sandra Foletti, Izhar Neder, Mark Rudner, Diana Mahalu, Vladimir Umansky, Amir Yacoby

Abstract: Qubits, the quantum mechanical bits required for quantum computing, must retain their fragile quantum states over long periods of time. In many types of electron spin qubits, the primary source of decoherence is the interaction between the electron spins and nuclear spins of the host lattice. For electrons in gate defined GaAs quantum dots, previous spin echo measurements have revealed coherence… ▽ More Qubits, the quantum mechanical bits required for quantum computing, must retain their fragile quantum states over long periods of time. In many types of electron spin qubits, the primary source of decoherence is the interaction between the electron spins and nuclear spins of the host lattice. For electrons in gate defined GaAs quantum dots, previous spin echo measurements have revealed coherence times of about 1 $μ$s at low magnetic fields below 100 mT. Here, we show that coherence in such devices can actually survive to much longer times, and provide a detailed understanding of the measured nuclear spin induced decoherence. At fields above a few hundred millitesla, the coherence time measured using a single-pulse spin echo extends to 30 $μ$s. At lower magnetic fields, the echo first collapses, but then revives at later times given by the period of the relative Larmor precession of different nuclear species. This behavior was recently predicted, and as we show can be quantitatively accounted for by a semi-classical model for the electron spin dynamics in the presence of a nuclear spin bath. Using a multiple-pulse Carr-Purcell-Meiboom-Gill echo sequence, the decoherence time can be extended to more than 200 $μ$s, which represents an improvement by two orders of magnitude compared to previous measurements. This demonstration of effective methods to mitigate nuclear spin induced decoherence puts the quantum error correction threshold within reach. △ Less

Submitted 17 May, 2010; originally announced May 2010.

Comments: 10 pages, 3 figures. See http://physics.harvard.edu/~hendrikb/publications.html for supplementary document

Dynamic Nuclear Polarization in Double Quantum Dots

Authors: M. Gullans, J. J. Krich, J. M. Taylor, H. Bluhm, B. I. Halperin, C. M. Marcus, M. Stopa, A. Yacoby, M. D. Lukin

Abstract: We theoretically investigate the controlled dynamic polarization of lattice nuclear spins in GaAs double quantum dots containing two electrons. Three regimes of long-term dynamics are identified, including the build up of a large difference in the Overhauser fields across the dots, the saturation of the nuclear polarization process associated with formation of so-called "dark states," and the elim… ▽ More We theoretically investigate the controlled dynamic polarization of lattice nuclear spins in GaAs double quantum dots containing two electrons. Three regimes of long-term dynamics are identified, including the build up of a large difference in the Overhauser fields across the dots, the saturation of the nuclear polarization process associated with formation of so-called "dark states," and the elimination of the difference field. We show that in the case of unequal dots, build up of difference fields generally accompanies the nuclear polarization process, whereas for nearly identical dots, build up of difference fields competes with polarization saturation in dark states. The elimination of the difference field does not, in general, correspond to a stable steady state of the polarization process. △ Less

Submitted 6 June, 2010; v1 submitted 23 March, 2010; originally announced March 2010.

Comments: 4 pages, 2 figures

Journal ref: Phys. Rev. Lett. 104, 226807 (2010)

Enhancing the Coherence of a Spin Qubit by Operating it as a Feedback Loop That Controls its Nuclear Spin Bath

Authors: Hendrik Bluhm, Sandra Foletti, Diana Mahalu, Vladimir Umansky, Amir Yacoby

Abstract: In many realizations of electron spin qubits the dominant source of decoherence is the fluctuating nuclear spin bath of the host material. The slowness of this bath lends itself to a promising mitigation strategy where the nuclear spin bath is prepared in a narrowed state with suppressed fluctuations. Here, this approach is realized for a two-electron spin qubit in a GaAs double quantum dot and a… ▽ More In many realizations of electron spin qubits the dominant source of decoherence is the fluctuating nuclear spin bath of the host material. The slowness of this bath lends itself to a promising mitigation strategy where the nuclear spin bath is prepared in a narrowed state with suppressed fluctuations. Here, this approach is realized for a two-electron spin qubit in a GaAs double quantum dot and a nearly ten-fold increase in the inhomogeneous dephasing time $T_2^*$ is demonstrated. Between subsequent measurements, the bath is prepared by using the qubit as a feedback loop that first measures its nuclear environment by coherent precession, and then polarizes it depending on the final state. This procedure results in a stable fixed point at a nonzero polarization gradient between the two dots, which enables fast universal qubit control. △ Less

Submitted 27 November, 2010; v1 submitted 21 March, 2010; originally announced March 2010.

Comments: Journal version. Improved clarity of presentation and more concise terminology. 4 pages, 3 figures. Supplementary document included as ancillary file

Journal ref: Phys. Rev. Lett. 105, 216803 (2010)