Showing 1–21 of 21 results for author: Brus, L E

Liquid-like Free Carrier Solvation and Band Edge Luminescence in Lead-Halide Perovskites

Authors: Yinsheng Guo, Omer Yaffe, Trevor D. Hull, Jonathan S. Owen, David R. Reichman, Louis E. Brus

Abstract: We report a strongly temperature dependent luminescence Stokes shift in the electronic spectra of both hybrid and inorganic lead-bromide perovskite single crystals. This behavior stands in stark contrast to that exhibited by more conventional crystalline semiconductors. We correlate the electronic spectra with the anti-Stokes and Stokes Raman vibrational spectra. Dielectric solvation theories, ori… ▽ More We report a strongly temperature dependent luminescence Stokes shift in the electronic spectra of both hybrid and inorganic lead-bromide perovskite single crystals. This behavior stands in stark contrast to that exhibited by more conventional crystalline semiconductors. We correlate the electronic spectra with the anti-Stokes and Stokes Raman vibrational spectra. Dielectric solvation theories, originally developed for excited molecules dissolved in polar liquids, reproduce our experimental observations. Our approach, which invokes a classical Debye-like relaxation process, captures the dielectric response originating from an anharmonic LO phonon at about 20 meV (160 cm-1) in the lead-bromide framework. We reconcile the liquid-like picture with more standard solid-state theories of the Stokes shift in crystalline semiconductors. △ Less

Submitted 4 April, 2018; originally announced April 2018.

Controlled Electrochemical Intercalation of Graphene/h-BN van der Waals Heterostructures

Authors: S. Y. Frank Zhao, Giselle A. Elbaz, D. Kwabena Bediako, Cyndia Yu, Dmitri K. Efetov, Yinsheng Guo, Jayakanth Ravichandran, Kyung-Ah Min, Suklyun Hong, Takashi Taniguchi, Kenji Watanabe, Louis E. Brus, Xavier Roy, Philip Kim

Abstract: Electrochemical intercalation is a powerful method for tuning the electronic properties of layered solids. In this work, we report an electro-chemical strategy to controllably intercalate lithium ions into a series of van der Waals (vdW) heterostructures built by sandwiching graphene between hexagonal boron nitride (h-BN). We demonstrate that encapsulating graphene with h-BN eliminates parasitic s… ▽ More Electrochemical intercalation is a powerful method for tuning the electronic properties of layered solids. In this work, we report an electro-chemical strategy to controllably intercalate lithium ions into a series of van der Waals (vdW) heterostructures built by sandwiching graphene between hexagonal boron nitride (h-BN). We demonstrate that encapsulating graphene with h-BN eliminates parasitic surface side reactions while simultaneously creating a new hetero-interface that permits intercalation between the atomically thin layers. To monitor the electrochemical process, we employ the Hall effect to precisely monitor the intercalation reaction. We also simultaneously probe the spectroscopic and electrical transport properties of the resulting intercalation compounds at different stages of intercalation. We achieve the highest carrier density $> 5 \times 10^{13} cm^{-2}$ with mobility $> 10^3 cm^2/(Vs)$ in the most heavily intercalated samples, where Shubnikov-de Haas quantum oscillations are observed at low temperatures. These results set the stage for further studies that employ intercalation in modifying properties of vdW heterostructures. △ Less

Submitted 21 October, 2017; originally announced October 2017.

Interplay between organic cations and inorganic framework and incommensurability in hybrid lead-halide perovskite CH3NH3PbBr3

Authors: Yinsheng Guo, Omer Yaffe, Daniel W. Paley, Alexander N. Beecher, Trevor D. Hull, Guilherme Szpak, Jonathan S. Owen, Louis E. Brus, Marcos A. Pimenta

Abstract: Organic-inorganic coupling in the hybrid lead-halide perovskite is a central issue in rationalizing the outstanding photovoltaic performance of these emerging materials. Here we compare and contrast the evolution of structure and dynamics of the hybrid CH3NH3PbBr3 and the inorganic CsPbBr3 lead-halide perovskites with temperature, using Raman spectroscopy and single-crystal X-ray diffraction. Resu… ▽ More Organic-inorganic coupling in the hybrid lead-halide perovskite is a central issue in rationalizing the outstanding photovoltaic performance of these emerging materials. Here we compare and contrast the evolution of structure and dynamics of the hybrid CH3NH3PbBr3 and the inorganic CsPbBr3 lead-halide perovskites with temperature, using Raman spectroscopy and single-crystal X-ray diffraction. Results reveal a stark contrast between their order-disorder transitions, abrupt for the hybrid whereas smooth for the inorganic perovskite. X-ray diffraction observes an intermediate incommensurate phase between the ordered and the disordered phases in CH3NH3PbBr3. Low-frequency Raman scattering captures the appearance of a sharp soft mode in the incommensurate phase, ascribed to the theoretically predicted amplitudon mode. Our work highlights the interaction between the structural dynamics of organic cation CH3NH3+ and the lead-halide framework, and unravels the competition between tendencies of the organic and inorganic moieties to minimize energy in the incommensurate phase of the hybrid perovskite structure. △ Less

Submitted 29 August, 2017; v1 submitted 30 May, 2017; originally announced May 2017.

Journal ref: Phys. Rev. Materials 1, 042401 (2017)

Coulomb engineering of the bandgap in 2D semiconductors

Authors: Archana Raja, Andrey Chaves, Jaeeun Yu, Ghidewon Arefe, Heather M. Hill, Albert F. Rigosi, Timothy C. Berkelbach, Philipp Nagler, Christian Schüller, Tobias Korn, Colin Nuckolls, James Hone, Louis E. Brus, Tony F. Heinz, David R. Reichman, Alexey Chernikov

Abstract: The ability to control the size of the electronic bandgap is an integral part of solid-state technology. Atomically-thin two-dimensional crystals offer a new approach for tuning the energies of the electronic states based on the interplay between the environmental sensitivity and unusual strength of the Coulomb interaction in these materials. By engineering the surrounding dielectric environment,… ▽ More The ability to control the size of the electronic bandgap is an integral part of solid-state technology. Atomically-thin two-dimensional crystals offer a new approach for tuning the energies of the electronic states based on the interplay between the environmental sensitivity and unusual strength of the Coulomb interaction in these materials. By engineering the surrounding dielectric environment, we are able to tune the electronic bandgap in monolayers of WS2 and WSe2 by hundreds of meV. We exploit this behavior to present an in-plane dielectric heterostructure with a spatially dependent bandgap, illustrating the feasibility of our approach for the creation of lateral junctions with nanoscale resolution. This successful demonstration of bandgap engineering based on the non-invasive modification of the Coulomb interaction should enable the design of a new class of atomically thin devices to advance the limits of size and functionality for solid-state technologies. △ Less

Submitted 7 February, 2017; v1 submitted 3 February, 2017; originally announced February 2017.

Local polar fluctuations in lead halide perovskite crystals

Authors: Omer Yaffe, Yinsheng Guo, Liang Z. Tan, David A. Egger, Trevor Hull, Constantinos C. Stoumpos, Fan Zheng, Tony F. Heinz, Leeor Kronik, Mercouri G. Kanatzidis, Jonathan S Owen, Andrew M. Rappe, Marcos A. Pimenta, Louis E. Brus

Abstract: Hybrid lead-halide perovskites have emerged as an excellent class of photovoltaic materials. Recent reports suggest that the organic molecular cation is responsible for local polar fluctuations that inhibit carrier recombination. We combine low frequency Raman scattering with first-principles molecular dynamics (MD) to study the fundamental nature of these local polar fluctuations. Our observation… ▽ More Hybrid lead-halide perovskites have emerged as an excellent class of photovoltaic materials. Recent reports suggest that the organic molecular cation is responsible for local polar fluctuations that inhibit carrier recombination. We combine low frequency Raman scattering with first-principles molecular dynamics (MD) to study the fundamental nature of these local polar fluctuations. Our observations of a strong central peak in both hybrid (CH$_3$NH$_3$PbBr$_3$) and all-inorganic (CsPbBr$_3$) lead-halide perovskites show that anharmonic, local polar fluctuations are intrinsic to the general lead-halide perovskite structure, and not unique to the dipolar organic cation. MD simulations show that head-to-head Cs motion coupled to Br face expansion, on a few hundred femtosecond time scale, drives the local polar fluctuations in CsPbBr$_3$. △ Less

Submitted 10 February, 2017; v1 submitted 27 April, 2016; originally announced April 2016.

Journal ref: Phys. Rev. Lett. 118, 136001 (2017)

Intrinsic lineshape of the Raman 2D-mode in freestanding graphene monolayers

Authors: Stéphane Berciaud, Xianglong Li, Han Htoon, Louis E. Brus, Stephen K. Doorn, Tony F. Heinz

Abstract: We report a comprehensive study of the two-phonon inter-valley (2D) Raman mode in graphene monolayers, motivated by recent reports of asymmetric 2D-mode lineshapes in freestanding graphene. For photon energies in the range $1.53 \rm eV - 2.71 \rm eV$, the 2D-mode Raman response of freestanding samples appears as bimodal, in stark contrast with the Lorentzian approximation that is commonly used for… ▽ More We report a comprehensive study of the two-phonon inter-valley (2D) Raman mode in graphene monolayers, motivated by recent reports of asymmetric 2D-mode lineshapes in freestanding graphene. For photon energies in the range $1.53 \rm eV - 2.71 \rm eV$, the 2D-mode Raman response of freestanding samples appears as bimodal, in stark contrast with the Lorentzian approximation that is commonly used for supported monolayers. The transition between the freestanding and supported cases is mimicked by electrostatically doping freestanding graphene at carrier densities above $2\times 10^{11} \rm cm^{-2}$. This result quantitatively demonstrates that low levels of charging can obscure the intrinsically bimodal 2D-mode lineshape of monolayer graphene, which can be utilized as a signature of a quasi-neutral sample. In pristine freestanding graphene, we observe a broadening of the 2D-mode feature with decreasing photon energy that cannot be rationalized using a simple one-dimensional model based on resonant \textit{inner} and \textit{outer} processes. This indicates that phonon wavevectors away from the high-symmetry lines of the Brillouin zone must contribute to the 2D-mode, so that a full two-dimensional calculation is required to properly describe multiphonon-resonant Raman processes. △ Less

Submitted 30 May, 2013; originally announced May 2013.

Journal ref: Nano Lett., 13, 3517 (2013)

Raman Spectroscopy of Lithographically Patterned Graphene Nanoribbons

Authors: Sunmin Ryu, Janina Maultzsch, Melinda Y. Han, Philip Kim, Louis E. Brus

Abstract: Nanometer-scale graphene objects are attracting much research interest because of newly emerging properties originating from quantum confinement effects. We present Raman spectroscopy studies of graphene nanoribbons (GNRs) which are known to have nonzero electronic bandgap. GNRs of width ranging from 15 nm to 100 nm have been prepared by e-beam lithographic patterning of mechanically exfoliated gr… ▽ More Nanometer-scale graphene objects are attracting much research interest because of newly emerging properties originating from quantum confinement effects. We present Raman spectroscopy studies of graphene nanoribbons (GNRs) which are known to have nonzero electronic bandgap. GNRs of width ranging from 15 nm to 100 nm have been prepared by e-beam lithographic patterning of mechanically exfoliated graphene followed by oxygen plasma etching. Raman spectra of narrow GNRs can be characterized by upshifted G band and prominent disorder-related D band originating from scattering at ribbon edges. The D-to-G band intensity ratio generally increases with decreasing ribbon width. However, its decrease for width < 25 nm, partly attributed to amorphization at the edges, provides a valuable experimental estimate on D mode relaxation length of <5 nm. The upshift in the G band of the narrowest GNRs can be attributed to confinement effect or chemical doping by functional groups on the GNR edges. Notably, GNRs are much more susceptible to photothermal effects resulting in reversible hole doping caused by atmospheric oxygen than bulk graphene sheets. Finally we show that the 2D band is still a reliable marker in determining the number of layers of GNRs despite its significant broadening for very narrow GNRs. △ Less

Submitted 20 January, 2012; originally announced January 2012.

Comments: 22 pages, 9 figures

Journal ref: ACS Nano, 2011, 5 (5), pp 4123-4130

High-resolution spatial mapping of the temperature distribution of a Joule self-heated graphene nanoribbon

Authors: Young-Jun Yu, Melinda Y. Han, Stephane Berciaud, Alexandru B. Georgescu, Tony F. Heinz, Louis E. Brus, Kwang S. Kim, Philip Kim

Abstract: We investigate the temperature distributions of Joule self-heated graphene nanoribbons (GNRs) with a spatial resolution finer than 100 nm by scanning thermal microscopy (SThM). The SThM probe is calibrated using the Raman G mode Stokes/anti-Stokes intensity ratio as a function of electric power applied to the GNR devices. From a spatial map of the temperature distribution, heat dissipation and tra… ▽ More We investigate the temperature distributions of Joule self-heated graphene nanoribbons (GNRs) with a spatial resolution finer than 100 nm by scanning thermal microscopy (SThM). The SThM probe is calibrated using the Raman G mode Stokes/anti-Stokes intensity ratio as a function of electric power applied to the GNR devices. From a spatial map of the temperature distribution, heat dissipation and transport pathways are investigated. By combining SThM and scanning gate microscopy data from a defected GNR, we observe hot spot formation at well-defined, localized sites. △ Less

Submitted 19 October, 2011; v1 submitted 13 October, 2011; originally announced October 2011.

Comments: 4 pages, 3 figures, accepted on App. Phys. Lett

Atmospheric Oxygen Binding and Hole Doping in Deformed Graphene on a SiO2 Substrate

Authors: Sunmin Ryu, Li Liu, Stephane Berciaud, Young-Jun Yu, Haitao Liu, Philip Kim, George W. Flynn, Louis E. Brus

Abstract: Using micro-Raman spectroscopy and scanning tunneling microscopy, we study the relationship between structural distortion and electrical hole doping of graphene on a silicon dioxide substrate. The observed upshift of the Raman G band represents charge doping and not compressive strain. Two independent factors control the doping: (1) the degree of graphene coupling to the substrate, and (2) exposur… ▽ More Using micro-Raman spectroscopy and scanning tunneling microscopy, we study the relationship between structural distortion and electrical hole doping of graphene on a silicon dioxide substrate. The observed upshift of the Raman G band represents charge doping and not compressive strain. Two independent factors control the doping: (1) the degree of graphene coupling to the substrate, and (2) exposure to oxygen and moisture. Thermal annealing induces a pronounced structural distortion due to close coupling to SiO2 and activates the ability of diatomic oxygen to accept charge from graphene. Gas flow experiments show that dry oxygen reversibly dopes graphene; doping becomes stronger and more irreversible in the presence of moisture and over long periods of time. We propose that oxygen molecular anions are stabilized by water solvation and electrostatic binding to the silicon dioxide surface. △ Less

Submitted 13 November, 2010; originally announced November 2010.

Comments: 17 pages, 5 figures

Journal ref: Nano Letters 10, 4944 (2010)

Imaging Stacking Order in Few-Layer Graphene

Authors: Chun Hung Lui, Zhiqiang Li, Zheyuan Chen, Paul V. Klimov, Louis E. Brus, Tony F. Heinz

Abstract: Few-layer graphene (FLG) has been predicted to exist in various crystallographic stacking sequences, which can strongly influence the electronic properties of FLG. We demonstrate an accurate and efficient method to characterize stacking order in FLG using the distinctive features of the Raman 2D-mode. Raman imaging allows us to visualize directly the spatial distribution of Bernal (ABA) and rhombo… ▽ More Few-layer graphene (FLG) has been predicted to exist in various crystallographic stacking sequences, which can strongly influence the electronic properties of FLG. We demonstrate an accurate and efficient method to characterize stacking order in FLG using the distinctive features of the Raman 2D-mode. Raman imaging allows us to visualize directly the spatial distribution of Bernal (ABA) and rhombohedral (ABC) stacking in tri- and tetra-layer graphene. We find that 15% of exfoliated graphene tri- and tetra-layers is comprised of micron-sized domains of rhombohedral stacking, rather than of usual Bernal stacking. These domains are stable and remain unchanged for temperatures exceeding $800^{\circ}$C. △ Less

Submitted 12 November, 2010; originally announced November 2010.

Comments: submitted to Nano Letters; supplementary information about infrared spectroscopy of ABA and ABC graphene trilayers are included;

Journal ref: Nano Letters, 11, 164-169 (2011)

Magnetic phase transition in V2O3 nanocrystals

Authors: V. A. Blagojevic, J. P. Carlo, L. E. Brus, M. L. Steigerwald, Y. J. Uemura, S. J. L. Billinge, W. Zhou, P. W. Stephens, A. A. Aczel, G. M. Luke

Abstract: V2O3 nanocrystals can be synthesized through hydrothermal reduction of VO(OH)2 using hydrazine as a reducing agent. Addition of different ligands to the reaction produces nanoparticles, nanorods and nanoplatelets of different sizes. Small nanoparticles synthesized in this manner show suppression of the magnetic phase transition to lower temperatures. Using muon spin relaxation spectroscopy and syn… ▽ More V2O3 nanocrystals can be synthesized through hydrothermal reduction of VO(OH)2 using hydrazine as a reducing agent. Addition of different ligands to the reaction produces nanoparticles, nanorods and nanoplatelets of different sizes. Small nanoparticles synthesized in this manner show suppression of the magnetic phase transition to lower temperatures. Using muon spin relaxation spectroscopy and synchrotron x-ray diffraction, it is determined that the volume fraction of the high-temperature phase, characterized by a rhombohedral structure and paramagnetism, gradually declines with decreasing temperature, in contrast to the sharp transition observed in bulk V2O3. △ Less

Submitted 31 August, 2010; v1 submitted 21 July, 2010; originally announced July 2010.

Comments: 6 pages, 6 figures

Journal ref: Phys. Rev. B 82, 094453 (2010)

Anomalous Lattice Vibrations of Single and Few-Layer MoS2

Authors: Changgu Lee, Hugen Yan, Louis E. Brus, Tony F. Heinz, James Hone, Sunmin Ryu

Abstract: Molybdenum disulfide (MoS2) of single and few-layer thickness was exfoliated on SiO2/Si substrate and characterized by Raman spectroscopy. The number of S-Mo-S layers of the samples was independently determined by contact-mode atomic-force microscopy. Two Raman modes, E12g and A1g, exhibited sensitive thickness dependence, with the frequency of the former decreasing and that of the latter increasi… ▽ More Molybdenum disulfide (MoS2) of single and few-layer thickness was exfoliated on SiO2/Si substrate and characterized by Raman spectroscopy. The number of S-Mo-S layers of the samples was independently determined by contact-mode atomic-force microscopy. Two Raman modes, E12g and A1g, exhibited sensitive thickness dependence, with the frequency of the former decreasing and that of the latter increasing with thickness. The results provide a convenient and reliable means for determining layer thickness with atomic-level precision. The opposite direction of the frequency shifts, which cannot be explained solely by van der Waals interlayer coupling, is attributed to Coulombic interactions and possible stacking-induced changes of the intralayer bonding. This work exemplifies the evolution of structural parameters in layered materials in changing from the 3-dimensional to the 2-dimensional regime. △ Less

Submitted 14 May, 2010; originally announced May 2010.

Comments: 14 pages, 4 figures

Journal ref: ACS Nano 4, 2695 (2010)

Electron and optical phonon temperatures in electrically biased graphene

Authors: Stéphane Berciaud, Melinda Y. Han, Louis E. Brus, Philip Kim, Tony F. Heinz

Abstract: We examine the intrinsic energy dissipation steps in electrically biased graphene channels. By combining in-situ measurements of the spontaneous optical emission with a Raman spectroscopy study of the graphene sample under conditions of current flow, we obtain independent information on the energy distribution of the electrons and phonons. The electrons and holes contributing to light emission are… ▽ More We examine the intrinsic energy dissipation steps in electrically biased graphene channels. By combining in-situ measurements of the spontaneous optical emission with a Raman spectroscopy study of the graphene sample under conditions of current flow, we obtain independent information on the energy distribution of the electrons and phonons. The electrons and holes contributing to light emission are found to obey a thermal distribution, with temperatures in excess of 1500 K in the regime of current saturation. The zone-center optical phonons are also highly excited and are found to be in equilibrium with the electrons. For a given optical phonon temperature, the anharmonic downshift of the Raman G-mode is smaller than expected under equilibrium conditions, suggesting that the electrons and high-energy optical phonons are not fully equilibrated with all of the phonon modes. △ Less

Submitted 31 March, 2010; originally announced March 2010.

Journal ref: Phys. Rev. Lett. 104, 227401 (2010)

Energy Transfer from Individual Semiconductor Nanocrystals to Graphene

Authors: Zheyuan Chen, Stéphane Berciaud, Colin Nuckolls, Tony F. Heinz, Louis E. Brus

Abstract: Energy transfer from photoexcited zero-dimensional systems to metallic systems plays a prominent role in modern day materials science. A situation of particular interest concerns the interaction between a photoexcited dipole and an atomically thin metal. The recent discovery of graphene layers permits investigation of this phenomenon. Here we report a study of fluorescence from individual CdSe/Z… ▽ More Energy transfer from photoexcited zero-dimensional systems to metallic systems plays a prominent role in modern day materials science. A situation of particular interest concerns the interaction between a photoexcited dipole and an atomically thin metal. The recent discovery of graphene layers permits investigation of this phenomenon. Here we report a study of fluorescence from individual CdSe/ZnS nanocrystals in contact with single- and few-layer graphene sheets. The rate of energy transfer is determined from the strong quenching of the nanocrystal fluorescence. For single-layer graphene, we find a rate of ~ 4ns-1, in agreement with a model based on the dipole approximation and a tight-binding description of graphene. This rate increases significantly with the number of graphene layers, before approaching the bulk limit. Our study quantifies energy transfer to and fluorescence quenching by graphene, critical properties for novel applications in photovoltaic devices and as a molecular ruler. △ Less

Submitted 15 March, 2010; originally announced March 2010.

Journal ref: ACS Nano 4, 2964 (2010)

Excitons and high-order optical transitions in individual carbon nanotubes

Authors: Stephane Berciaud, Christophe Voisin, Hugen Yan, Bhupesh Chandra, Robert Caldwell, Yuyao Shan, Louis E. Brus, James Hone, Tony F. Heinz

Abstract: We examine the excitonic nature of high-lying optical transitions in single-walled carbon nanotubes by means of Rayleigh scattering spectroscopy. A careful analysis of the principal transitions of individual semiconducting and metallic nanotubes reveals that in both cases the lineshape is consistent with an excitonic model, but not one of free-carriers. For semiconducting species, side-bands are… ▽ More We examine the excitonic nature of high-lying optical transitions in single-walled carbon nanotubes by means of Rayleigh scattering spectroscopy. A careful analysis of the principal transitions of individual semiconducting and metallic nanotubes reveals that in both cases the lineshape is consistent with an excitonic model, but not one of free-carriers. For semiconducting species, side-bands are observed at ~200 meV above the third and fourth optical transitions. These features are ascribed to exciton-phonon bound states. Such side-bands are not apparent for metallic nanotubes,as expected from the reduced strength of excitonic interactions in these systems. △ Less

Submitted 25 January, 2010; originally announced January 2010.

Journal ref: Phys. Rev. B 81, 041414(R) (2010)

Tuning the graphene work function by electric field effect

Authors: Young-Jun Yu, Yue Zhao, Sunmin Ryu, Louis E. Brus, Kwang S. Kim, Philip Kim

Abstract: We report variation of the work function for single and bi-layer graphene devices measured by scanning Kelvin probe microscopy (SKPM). Using the electric field effect, the work function of graphene can be adjusted as the gate voltage tunes the Fermi level across the charge neutrality point. Upon biasing the device, the surface potential map obtained by SKPM provides a reliable way to measure the… ▽ More We report variation of the work function for single and bi-layer graphene devices measured by scanning Kelvin probe microscopy (SKPM). Using the electric field effect, the work function of graphene can be adjusted as the gate voltage tunes the Fermi level across the charge neutrality point. Upon biasing the device, the surface potential map obtained by SKPM provides a reliable way to measure the contact resistance of individual electrodes contacting graphene. △ Less

Submitted 4 September, 2009; v1 submitted 31 August, 2009; originally announced September 2009.

Comments: 11 pages and 8 figures including supplementary information, to appear in Nano Letters

Probing the Intrinsic Properties of Exfoliated Graphene: Raman Spectroscopy of Free-Standing Monolayers

Authors: Stephane Berciaud, Sunmin Ryu, Louis E. Brus, Tony F. Heinz

Abstract: The properties of pristine, free-standing graphene monolayers prepared by mechanical exfoliation of graphite are investigated. The graphene monolayers, suspended over open trenches, are examined by means of spatially resolved Raman spectroscopy of the G-, D-, and 2D-phonon modes. The G-mode phonons exhibit reduced energies (1580 cm-1) and increased widths (14 cm-1) compared to the response of gr… ▽ More The properties of pristine, free-standing graphene monolayers prepared by mechanical exfoliation of graphite are investigated. The graphene monolayers, suspended over open trenches, are examined by means of spatially resolved Raman spectroscopy of the G-, D-, and 2D-phonon modes. The G-mode phonons exhibit reduced energies (1580 cm-1) and increased widths (14 cm-1) compared to the response of graphene monolayers supported on the SiO2 covered substrate. From analysis of the G-mode Raman spectra, we deduce that the free-standing graphene monolayers are essentially undoped, with an upper bound of 2x10^11 cm-2 for the residual carrier concentration. On the supported regions, significantly higher and spatially inhomogeneous doping is observed. The free-standing graphene monolayers show little local disorder, based on the very weak Raman D-mode response. The two-phonon 2D mode of the free-standing graphene monolayers is downshifted in frequency compared to that of the supported region of the samples and exhibits a narrowed, positively skewed line shape. △ Less

Submitted 6 January, 2009; originally announced January 2009.

Reversible Basal Plane Hydrogenation of Graphene

Authors: Sunmin Ryu, Melinda Y. Han, Janina Maultzsch, Tony F. Heinz, Philip Kim, Michael L. Steigerwald, Louis E. Brus

Abstract: We report the chemical reaction of single-layer graphene with hydrogen atoms, generated in situ by electron-induced dissociation of hydrogen silsesquioxane (HSQ). Hydrogenation, forming sp3 C-H functionality on the basal plane of graphene, proceeds at a higher rate for single than for double layers, demonstrating the enhanced chemical reactivity of single sheet graphene. The net H atom sticking… ▽ More We report the chemical reaction of single-layer graphene with hydrogen atoms, generated in situ by electron-induced dissociation of hydrogen silsesquioxane (HSQ). Hydrogenation, forming sp3 C-H functionality on the basal plane of graphene, proceeds at a higher rate for single than for double layers, demonstrating the enhanced chemical reactivity of single sheet graphene. The net H atom sticking probability on single layers at 300 K is at least 0.03, which exceeds that of double layers by at least a factor of 15. Chemisorbed hydrogen atoms, which give rise to a prominent Raman D band, can be detached by thermal annealing at 100~200 degrees C. The resulting dehydrogenated graphene is "activated" when photothermally heated it reversibly binds ambient oxygen, leading to hole doping of the graphene. This functionalization of graphene can be exploited to manipulate electronic and charge transport properties of graphene devices. △ Less

Submitted 18 November, 2008; originally announced November 2008.

Comments: Main text: 14 pages with 6 figures, supporting information: 4 pages with 4 figures;Nano Letters, Articles ASAP (2008)

Journal ref: Nano Lett. 8, 4597 (2008)

Graphene Oxidation: Thickness Dependent Etching and Strong Chemical Doping

Authors: Li Liu, Sunmin Ryu, Michelle R. Tomasik, Elena Stolyarova, Naeyoung Jung, Mark S. Hybertsen, Michael L. Steigerwald, Louis E. Brus, George W. Flynn

Abstract: Patterned graphene shows substantial potential for applications in future molecular-scale integrated electronics. Environmental effects are a critical issue in a single layer material where every atom is on the surface. Especially intriguing is the variety of rich chemical interactions shown by molecular oxygen with aromatic molecules. We find that O2 etching kinetics vary strongly with the numb… ▽ More Patterned graphene shows substantial potential for applications in future molecular-scale integrated electronics. Environmental effects are a critical issue in a single layer material where every atom is on the surface. Especially intriguing is the variety of rich chemical interactions shown by molecular oxygen with aromatic molecules. We find that O2 etching kinetics vary strongly with the number of graphene layers in the sample. Three-layer-thick samples show etching similar to bulk natural graphite. Single-layer graphene reacts faster and shows random etch pits in contrast to natural graphite where nucleation occurs at point defects. In addition, basal plane oxygen species strongly hole dope graphene, with a Fermi level shift of ~0.5 eV. These oxygen species partially desorb in an Ar gas flow, or under irradiation by far UV light, and readsorb again in an O2 atmosphere at room temperature. This strongly doped graphene is very different than graphene oxide made by mineral acid attack. △ Less

Submitted 1 July, 2008; originally announced July 2008.

Comments: 15 pages, 5 figures

Journal ref: Nano Lett. 8, 1965 (2008)

Variable Electron-Phonon Coupling in Isolated Metallic Carbon Nanotubes Observed by Raman Scattering

Authors: Yang Wu, Janina Maultzsch, Ernst Knoesel, Bhupesh Chandra, Mingyuan Huang, Matthew Y. Sfeir, Louis E. Brus, J. Hone, Tony F. Heinz

Abstract: We report the existence of broad and weakly asymmetric features in the high-energy (G) Raman modes of freely suspended metallic carbon nanotubes of defined chiral index. A significant variation in peak width (from 12 cm-1 to 110 cm-1) is observed as a function of the nanotube's chiral structure. When the nanotubes are electrostatically gated, the peak widths decrease. The broadness of the Raman… ▽ More We report the existence of broad and weakly asymmetric features in the high-energy (G) Raman modes of freely suspended metallic carbon nanotubes of defined chiral index. A significant variation in peak width (from 12 cm-1 to 110 cm-1) is observed as a function of the nanotube's chiral structure. When the nanotubes are electrostatically gated, the peak widths decrease. The broadness of the Raman features is understood as the consequence of coupling of the phonon to electron-hole pairs, the strength of which varies with the nanotube chiral index and the position of the Fermi energy. △ Less

Submitted 27 May, 2007; originally announced May 2007.

Comments: 13 pages; submitted to Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 99, 027402 (2007)

High-Resolution Scanning Tunneling Microscopy Imaging of Mesoscopic Graphene Sheets on an Insulating Surface

Authors: Elena Stolyarova, Kwang Taeg Rim, Sunmin Ryu, Janina Maultzsch, Philip Kim, Louis E. Brus, Tony F. Heinz, Mark S. Hybertsen, George W. Flynn

Abstract: We present scanning tunneling microscopy (STM) images of single-layer graphene crystals examined under ultrahigh vacuum conditions. The samples, with lateral dimensions on the micron scale, were prepared on a silicon dioxide surface by direct exfoliation of single crystal graphite. The single-layer films were identified using Raman spectroscopy. Topographic images of single-layer samples display… ▽ More We present scanning tunneling microscopy (STM) images of single-layer graphene crystals examined under ultrahigh vacuum conditions. The samples, with lateral dimensions on the micron scale, were prepared on a silicon dioxide surface by direct exfoliation of single crystal graphite. The single-layer films were identified using Raman spectroscopy. Topographic images of single-layer samples display the honeycomb structure expected for the full hexagonal symmetry of an isolated graphene monolayer. The absence of observable defects in the STM images is indicative of the high quality of these films. Crystals comprised of a few layers of graphene were also examined. They exhibited dramatically different STM topography, displaying the reduced three-fold symmetry characteristic of the surface of bulk graphite. △ Less

Submitted 6 May, 2007; originally announced May 2007.

Comments: Accepted to PNAS

Journal ref: Proc Natl Acad Sci U S A. 2007 May 29;104(22):9209-12