Showing 1–38 of 38 results for author: Chen, I

Minimally Entangled Typical Thermal States for Classical and Quantum Simulation of Gauge Theories at Finite Temperature and Density

Authors: I-Chi Chen, João C. Getelina, Klée Pollock, Srimoyee Sen, Yong-Xin Yao, Thomas Iadecola

Abstract: Simulating strongly coupled gauge theories at finite temperature and density is a longstanding challenge in nuclear and high-energy physics that also has fundamental implications for condensed matter physics. In this work, we investigate the utility of minimally entangled typical thermal state (METTS) approaches to facilitate both classical and quantum computational studies of such systems. METTS… ▽ More Simulating strongly coupled gauge theories at finite temperature and density is a longstanding challenge in nuclear and high-energy physics that also has fundamental implications for condensed matter physics. In this work, we investigate the utility of minimally entangled typical thermal state (METTS) approaches to facilitate both classical and quantum computational studies of such systems. METTS techniques combine classical random sampling with imaginary time evolution, which can be performed on either a classical or a quantum computer, to estimate thermal averages of observables. We study the simplest model of a confining gauge theory, namely $\mathbb{Z}_2$ gauge theory coupled to spinless fermionic matter in 1+1 dimensions, which can be directly mapped to a local quantum spin chain with two- and three-body interactions. We benchmark both a classical matrix-product-state implementation of METTS and a recently proposed adaptive variational approach to METTS that is a promising candidate for implementation on near-term quantum devices, focusing on the equation of state as well as on various measures of fermion confinement. Of particular importance is the choice of basis for obtaining new METTS samples, which impacts both the classical sampling complexity (a key factor in both classical and quantum simulation applications) and complexity of circuits used in the quantum computing approach. Our work sets the stage for future studies of strongly coupled gauge theories with both classical and quantum hardware. △ Less

Submitted 16 July, 2024; originally announced July 2024.

Comments: 14 pages, 8 figures

Directional atomic layer etching of MgO-doped lithium niobate using sequential exposures of H$_2$ and SF$_6$ plasma

Authors: Ivy I. Chen, Jennifer Solgaard, Ryoto Sekine, Azmain A. Hossain, Anthony Ardizzi, David S. Catherall, Alireza Marandi, James R. Renzas, Frank Greer, Austin J. Minnich

Abstract: Lithium niobate (LiNbO$_3$, LN) is a ferroelectric crystal of interest for integrated photonics owing to its large second-order optical nonlinearity and the ability to impart periodic poling via an external electric field. However, on-chip device performance based on thin-film lithium niobate (TFLN) is presently limited by optical loss arising from corrugations between poled regions and sidewall s… ▽ More Lithium niobate (LiNbO$_3$, LN) is a ferroelectric crystal of interest for integrated photonics owing to its large second-order optical nonlinearity and the ability to impart periodic poling via an external electric field. However, on-chip device performance based on thin-film lithium niobate (TFLN) is presently limited by optical loss arising from corrugations between poled regions and sidewall surface roughness. Atomic layer etching (ALE) could potentially smooth these features and thereby increase photonic performance, but no ALE process has been reported for LN. Here, we report a directional ALE process for $x$-cut MgO-doped LN using sequential exposures of H$_2$ and SF$_6$/Ar plasmas. We observe etch rates up to $1.01 \pm 0.05$ nm/cycle with a synergy of $94$%. We also demonstrate ALE can be achieved with SF$_6$/O$_2$ or Cl$_2$/BCl$_3$ plasma exposures in place of the SF$_6$/Ar plasma step with synergies above $90$%. When combined with a wet post-process to remove redeposited compounds, the process yields a 50% decrease in surface roughness. With additional optimization to reduce the quantity of redeposited compounds, these processes could be used to smoothen surfaces of TFLN waveguides etched by physical Ar$^+$ milling, thereby increasing the performance of TFLN nanophotonic devices or enabling new integrated photonic capabilities. △ Less

Submitted 19 January, 2024; v1 submitted 16 October, 2023; originally announced October 2023.

Problem-tailored Simulation of Energy Transport on Noisy Quantum Computers

Authors: I-Chi Chen, Klée Pollock, Yong-Xin Yao, Peter P. Orth, Thomas Iadecola

Abstract: The transport of conserved quantities like spin and charge is fundamental to characterizing the behavior of quantum many-body systems. Numerically simulating such dynamics is generically challenging, which motivates the consideration of quantum computing strategies. However, the relatively high gate errors and limited coherence times of today's quantum computers pose their own challenge, highlight… ▽ More The transport of conserved quantities like spin and charge is fundamental to characterizing the behavior of quantum many-body systems. Numerically simulating such dynamics is generically challenging, which motivates the consideration of quantum computing strategies. However, the relatively high gate errors and limited coherence times of today's quantum computers pose their own challenge, highlighting the need to be frugal with quantum resources. In this work we report simulations on quantum hardware of infinite-temperature energy transport in the mixed-field Ising chain, a paradigmatic many-body system that can exhibit a range of transport behaviors at intermediate times. We consider a chain with $L=12$ sites and find results broadly consistent with those from ideal circuit simulators over 90 Trotter steps, containing up to 990 entangling gates. To obtain these results, we use two key problem-tailored insights. First, we identify a convenient basis$\unicode{x2013}$the Pauli $Y$ basis$\unicode{x2013}$in which to sample the infinite-temperature trace and provide theoretical and numerical justifications for its efficiency relative to, e.g., the computational basis. Second, in addition to a variety of problem-agnostic error mitigation strategies, we employ a renormalization strategy that compensates for global nonconservation of energy due to device noise. We expect that these techniques will prove useful beyond the specific application considered here. △ Less

Submitted 5 October, 2023; originally announced October 2023.

Comments: 8 + 10 pages, 3 + 8 figures

The characteristics of LK-99 by Cu$_2$S removal using ammonia solution: A diamagnetic semiconductor

Authors: Zhujialei Lei, Chin-Wei Lin, I-Nan Chen, Chun-Tse Chou, Li-Min Wang

Abstract: In this study, we re-evaluated the superconducting properties of LK-99. The LK-99 samples were synthesized using the process proposed by the original Korean team. Additionally, we examined whether the results of the Korean team are related to Cu$_2$S by using ammonia solution (NH$_3$-H$_2$O) to remove Cu$_2$S . Through x-ray diffraction (XRD) analysis, a distinct Cu$_2$S phase was identified in… ▽ More In this study, we re-evaluated the superconducting properties of LK-99. The LK-99 samples were synthesized using the process proposed by the original Korean team. Additionally, we examined whether the results of the Korean team are related to Cu$_2$S by using ammonia solution (NH$_3$-H$_2$O) to remove Cu$_2$S . Through x-ray diffraction (XRD) analysis, a distinct Cu$_2$S phase was identified in the LK-99 samples. A subsequent treatment using an ammonia solution effectively eliminated this phase. The appearance of blue Cu$^{+2}$ ions in the solution and the elimination of the Cu$_2$S peak in XRD support the conclusion. The magnetic and electrical properties of LK-99 with and without Cu$_2$S postulate that the superconducting-like behavior in LK-99 predominantly arises from a transition in resistivity due to the influence of Cu$_2$S . As such, LK-99 is better classified as a diamagnetic semiconductor than a room-temperature superconductor. The room-temperature superconductors still require further research. △ Less

Submitted 20 August, 2023; originally announced September 2023.

Error-Mitigated Simulation of Quantum Many-Body Scars on Quantum Computers with Pulse-Level Control

Authors: I-Chi Chen, Benjamin Burdick, Yongxin Yao, Peter P. Orth, Thomas Iadecola

Abstract: Quantum many-body scars are an intriguing dynamical regime in which quantum systems exhibit coherent dynamics and long-range correlations when prepared in certain initial states. We use this combination of coherence and many-body correlations to benchmark the performance of present-day quantum computing devices by using them to simulate the dynamics of an antiferromagnetic initial state in mixed-f… ▽ More Quantum many-body scars are an intriguing dynamical regime in which quantum systems exhibit coherent dynamics and long-range correlations when prepared in certain initial states. We use this combination of coherence and many-body correlations to benchmark the performance of present-day quantum computing devices by using them to simulate the dynamics of an antiferromagnetic initial state in mixed-field Ising chains of up to 19 sites. In addition to calculating the dynamics of local observables, we also calculate the Loschmidt echo and a nontrivial connected correlation function that witnesses long-range many-body correlations in the scarred dynamics. We find coherent dynamics to persist over up to 40 Trotter steps even in the presence of various sources of error. To obtain these results, we leverage a variety of error mitigation techniques including noise tailoring, zero-noise extrapolation, dynamical decoupling, and physically motivated postselection of measurement results. Crucially, we also find that using pulse-level control to implement the Ising interaction yields a substantial improvement over the standard CNOT-based compilation of this interaction. Our results demonstrate the power of error mitigation techniques and pulse-level control to probe many-body coherence and correlation effects on present-day quantum hardware. △ Less

Submitted 1 November, 2023; v1 submitted 15 March, 2022; originally announced March 2022.

Comments: 10+9 pages 7+5 figures

Journal ref: Phys. Rev. Research 4, 043027 (2022)

Precise atom manipulation through deep reinforcement learning

Authors: I-Ju Chen, Markus Aapro, Abraham Kipnis, Alexander Ilin, Peter Liljeroth, Adam S. Foster

Abstract: Atomic-scale manipulation in scanning tunneling microscopy has enabled the creation of quantum states of matter based on artificial structures and extreme miniaturization of computational circuitry based on individual atoms. The ability to autonomously arrange atomic structures with precision will enable the scaling up of nanoscale fabrication and expand the range of artificial structures hosting… ▽ More Atomic-scale manipulation in scanning tunneling microscopy has enabled the creation of quantum states of matter based on artificial structures and extreme miniaturization of computational circuitry based on individual atoms. The ability to autonomously arrange atomic structures with precision will enable the scaling up of nanoscale fabrication and expand the range of artificial structures hosting exotic quantum states. However, the \textit{a priori} unknown manipulation parameters, the possibility of spontaneous tip apex changes, and the difficulty of modeling tip-atom interactions make it challenging to select manipulation parameters that can achieve atomic precision throughout extended operations. Here we use deep reinforcement learning (DRL) to control the real-world atom manipulation process. Several state-of-the-art reinforcement learning techniques are used jointly to boost data efficiency. The reinforcement learning agent learns to manipulate Ag adatoms on Ag(111) surfaces with optimal precision and is integrated with path planning algorithms to complete an autonomous atomic assembly system. The results demonstrate that state-of-the-art deep reinforcement learning can offer effective solutions to real-world challenges in nanofabrication and powerful approaches to increasingly complex scientific experiments at the atomic scale. △ Less

Submitted 4 November, 2022; v1 submitted 14 March, 2022; originally announced March 2022.

Journal ref: Nat Commun 13, 7499 (2022)

Symmetry-controlled singlet-triplet transition in a double-barrier quantum ring

Authors: Heidi Potts, Josef Josefi, I-Ju Chen, Sebastian Lehmann, Kimberly A. Dick, Martin Leijnse, Stephanie M. Reimann, Jakob Bengtsson, Claes Thelander

Abstract: We engineer a system of two strongly confined quantum dots to gain reproducible electrostatic control of the spin at zero magnetic field. Coupling the dots in a tight ring-shaped potential with two tunnel barriers, we demonstrate that an electric field can switch the electron ground state between a singlet and a triplet configuration. Comparing our experimental co-tunneling spectroscopy data to a… ▽ More We engineer a system of two strongly confined quantum dots to gain reproducible electrostatic control of the spin at zero magnetic field. Coupling the dots in a tight ring-shaped potential with two tunnel barriers, we demonstrate that an electric field can switch the electron ground state between a singlet and a triplet configuration. Comparing our experimental co-tunneling spectroscopy data to a full many-body treatment of interacting electrons in a double-barrier quantum ring, we find excellent agreement in the evolution of many-body states with electric and magnetic fields. The calculations show that the singlet-triplet energy crossover, not found in conventionally coupled quantum dots, is made possible by the ring-shaped geometry of the confining potential. △ Less

Submitted 23 April, 2021; originally announced April 2021.

Journal ref: Phys. Rev. B 104, 081409 (2021)

Emergent symmetries and slow quantum dynamics in a Rydberg-atom chain with confinement

Authors: I-Chi Chen, Thomas Iadecola

Abstract: Rydberg atoms in optical tweezer arrays provide a playground for nonequilibrium quantum many-body physics. The PXP model describes the dynamics of such systems in the strongly interacting Rydberg blockade regime and notably exhibits weakly nonergodic dynamics due to quantum many-body scars. Here, we study the PXP model in a strong staggered external field, which has been proposed to manifest quasi… ▽ More Rydberg atoms in optical tweezer arrays provide a playground for nonequilibrium quantum many-body physics. The PXP model describes the dynamics of such systems in the strongly interacting Rydberg blockade regime and notably exhibits weakly nonergodic dynamics due to quantum many-body scars. Here, we study the PXP model in a strong staggered external field, which has been proposed to manifest quasiparticle confinement in light of a mapping to a lattice gauge theory. We characterize this confining regime using both numerical exact diagonalization and perturbation theory around the strong-field limit. In addition to the expected emergent symmetry generated by the staggered field, we find a second emergent symmetry that is special to the PXP model. The interplay between these emergent symmetries and the Rydberg blockade constraint dramatically slows down the system's dynamics beyond naive expectations. We devise a nested Schrieffer-Wolff perturbation theory to properly account for the new emergent symmetry and show that this treatment is essential to understand the numerically observed relaxation time scales. We also discuss connections to Hilbert space fragmentation and trace the origin of the new emergent symmetry to a "nearly-$SU(2)$" algebra discovered in the context of many-body scarring. △ Less

Submitted 17 March, 2021; originally announced March 2021.

Comments: 13 pages, 9 figures

Journal ref: Phys. Rev. B 103, 214304 (2021)

DC Resistance Degradation of SrTiO$_3$: The Role of Virtual-Cathode Needles and Oxygen Bubbles

Authors: Ana Alvarez, I-Wei Chen

Abstract: This study of highly accelerated lifetime tests of SrTiO$_3$, a model semiconducting oxide, is motivated by the interest in reliable multilayer ceramic capacitors and resistance-switching thin-film devices. Our analytical solution to oxygen-vacancy migration under a DC voltage -- the cause of resistance degradation in SrTiO$_3$ -- agrees with previous numerical solutions. However, all solutions fa… ▽ More This study of highly accelerated lifetime tests of SrTiO$_3$, a model semiconducting oxide, is motivated by the interest in reliable multilayer ceramic capacitors and resistance-switching thin-film devices. Our analytical solution to oxygen-vacancy migration under a DC voltage -- the cause of resistance degradation in SrTiO$_3$ -- agrees with previous numerical solutions. However, all solutions fail to explain why degradation kinetics feature a very strong voltage dependence, which we attribute to the nucleation and growth of cathode-initiated fast-conducting needles. While they have no color contrast in SrTiO$_3$ single crystals and are nominally invisible, needles presence in DC-degraded samples -- in silicone oil and in air -- was unambiguously revealed by in-situ hot-stage photography. Observations in silicone oil and thermodynamic considerations of voltage boundary conditions further revealed a cooccurrence of copious oxygen bubbling and the onset of final accelerating degradation, suggesting sudden oxygen loss is a precursor of final failure. Remarkably, both undoped and Fe-doped SrTiO$_3$ can emit electroluminescence at higher current densities, thus providing a vivid indicator of resistance degradation and a metal-to-insulator resistance transition during cooling. The implications of these findings to thin ceramic and thin film SrTiO$_3$ devices are discussed, along with connections to similar findings in likewise degraded fast-ion yttria-stabilized zirconia. △ Less

Submitted 31 December, 2020; originally announced December 2020.

Comments: 62 pages, 18 figures

Ultra-uniform Nanocrystalline Materials via Two-Step Sintering

Authors: Yanhao Dong, Hongbing Yang, Lin Zhang, Xingyu Li, Dong Ding, Xiaohui Wang, Ju Li, Jiangong Li, I-Wei Chen

Abstract: Nanocrystalline metals and ceramics with <100 nm grain sizes and superior properties (e.g., mechanical strength, hardness, fracture toughness and stored dielectric energy) are of great interest. Much has been discussed about achieving nano grains, but little is known about maintaining grain-size uniformity that is critical for material reliability. An especially intriguing question is whether it i… ▽ More Nanocrystalline metals and ceramics with <100 nm grain sizes and superior properties (e.g., mechanical strength, hardness, fracture toughness and stored dielectric energy) are of great interest. Much has been discussed about achieving nano grains, but little is known about maintaining grain-size uniformity that is critical for material reliability. An especially intriguing question is whether it is possible to achieve a size distribution narrower than what Hillert[1] theoretically predicted for normal grain growth, a possibility suggested, for growth with a higher growth exponent, by the generalized mean-field theory[2] of Lifshitz, Slyozov, Wagner (LSW)[3,4] and Hillert but never realized in practice. We demonstrate that this can be achieved in bulk materials with an appropriately designed two-step sintering route that (a) takes advantage of the large growth exponent in the intermediate sintering stage to form a most uniform microstructure despite porosity remaining, and (b) freezes the grain growth thereon while continuing densification to reach full density. The resultant dense bulk Al2O3 ceramic has an average grain size of 34 nm and a much narrower size distribution than Hillert's prediction. Bulk Al2O3 with a grain-size distribution narrower than the particle-size distribution of starting powders was also demonstrated using this strategy, as were highly uniform bulk engineering metals and ceramics of either high purity and high melting points (Mo and W-Re) or highly complex compositions (core-shell BaTiO3 and 0.87BaTiO3-0.13Bi(Zn2/3(Nb0.85Ta0.15)1/3)O3). △ Less

Submitted 9 September, 2020; v1 submitted 27 February, 2020; originally announced February 2020.

Journal ref: Adv. Funct. Mater. 2020, 2007750

Imaging the Thermalization of Hot Carriers After Thermionic Emission Over a Polytype Barrier

Authors: Fabian Könemann, I-Ju Chen, Sebastian Lehmann, Claes Thelander, Bernd Gotsmann

Abstract: The thermalization of non-equilibrium charge carriers is at the heart of thermoelectric energy conversion. In nanoscale systems, the equilibration length can be on the order of the system size, leading to a situation where thermoelectric effects need to be considered as spatially distributed, rather than localized at junctions. The energy exchange between charge carriers and phonons is of fundamen… ▽ More The thermalization of non-equilibrium charge carriers is at the heart of thermoelectric energy conversion. In nanoscale systems, the equilibration length can be on the order of the system size, leading to a situation where thermoelectric effects need to be considered as spatially distributed, rather than localized at junctions. The energy exchange between charge carriers and phonons is of fundamental scientific and technological interest, but their assessment poses significant experimental challenges. We addressed these challenges by imaging the temperature change induced by Peltier effects in crystal phase engineered InAs nanowire (NW) devices. Using high-resolution scanning thermal microscopy (SThM), we have studied current-carrying InAs NWs, which feature a barrier segment of wurtzite (WZ) of varying length in a NW of otherwise zincblende (ZB) crystal phase. The energy barrier acts as a filter for electron transport around the Fermi energy, giving rise to a thermoelectric effect. We find that thermalization through electron-phonon heat exchange extends over the entire device. We analyze the temperature profile along a nanowire by comparing it to spatially dependent heat diffusion and electron thermalization models. We are able to extract the governing properties of the system, including the electron thermalization length of $223 \pm 9$\,nm, Peltier coefficient and Seebeck coefficient introduced by the barrier of $39 \pm 7$\,mV and $89 \pm 21$\,$μ$V/K, respectively, and a thermal conductivity along the wire axis of $8.9 \pm 0.5$\,W/m/K. Finally, we compare two ways to extract the elusive thermal boundary conductance between NW and underlying substrate. △ Less

Submitted 26 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. Applied 13, 054035 (2020)

Dissipative topological systems

Authors: Yu-Wei Huang, Pei-Yun Yang, I-Chi Chen, Wei-Min Zhang

Abstract: Topological phases of matter are protected from local perturbations and therefore have been thought to be robust against decoherence. However, it has not been systematically explored whether and how topological states are dynamically robust against the environment-induced decoherence. In this Letter, we develop a theory for topological systems that incorporate dissipations, noises and thermal effe… ▽ More Topological phases of matter are protected from local perturbations and therefore have been thought to be robust against decoherence. However, it has not been systematically explored whether and how topological states are dynamically robust against the environment-induced decoherence. In this Letter, we develop a theory for topological systems that incorporate dissipations, noises and thermal effects. We derive novelly the exact master equation and the transient quantum transport for the study of dissipative topological systems, mainly focusing on noninteracting topological insulators and topological superconductors. The resulting exact master equation and the transient transport current are also applicable for the systems initially entangled with environments. We apply the theory to the topological Haldane model (Chern insulator) and the quantized Majorana conductance to explore topological phases of matter that incorporate dissipations, noises and thermal effects, and demonstrate the dissipative dynamics of topological states. △ Less

Submitted 23 September, 2019; originally announced September 2019.

Comments: 6 pages, 2 figures

Journal ref: Phys. Rev. B 102, 165116 (2020)

Hole polaron assisted oxygen ion migration in Li$_2$MnO$_3$

Authors: Yanhao Dong, I-Wei Chen, Ju Li

Abstract: Oxygen ion migration in Li2MnO3 was systematically studied by first-principles calculations. Hole polaron is found effective to lower the migration barrier of oxygen ion. Oxygen ion migration in Li2MnO3 was systematically studied by first-principles calculations. Hole polaron is found effective to lower the migration barrier of oxygen ion. △ Less

Submitted 15 August, 2019; originally announced August 2019.

DC Electrical Degradation of YSZ: Voltage Controlled Electrical Metallization of A Fast Ion Conducting Insulator

Authors: Ana Alvarez, Yanhao Dong, I-Wei Chen

Abstract: DC electrical degradation as a form of dielectric and resistance breakdown is a common phenomenon in thin-film devices including resistance-switching memory. To obtain design data and to probe the degradation mechanism, highly accelerated lifetime tests (HALT) are often conducted at higher temperatures with thicker samples. While the mechanism is well established in semiconducting oxides such as p… ▽ More DC electrical degradation as a form of dielectric and resistance breakdown is a common phenomenon in thin-film devices including resistance-switching memory. To obtain design data and to probe the degradation mechanism, highly accelerated lifetime tests (HALT) are often conducted at higher temperatures with thicker samples. While the mechanism is well established in semiconducting oxides such as perovskite titanates, it is not in stabilized zirconia and other fast oxygen-ion conductors that have little electronic conductivity. Here we model the mechanism by an oxygen-driven, transport-limited, metal-insulator transition, which finds support in rich experimental observations - including in situ videos and variable temperature studies - of yttria-stabilized zirconia. They are contrasted with the findings in semiconducting titanates and resistance memory, and provide new insight into ceramic processing with extremely rapid heating and cooling such as flash sintering and melt processing. △ Less

Submitted 15 July, 2019; v1 submitted 11 July, 2019; originally announced July 2019.

Electrical control of spins and giant g-factors in ring-like coupled quantum dots

Authors: Heidi Potts, I-Ju Chen, Athanasios Tsintzis, Malin Nilsson, Sebastian Lehmann, Kimberly A. Dick, Martin Leijnse, Claes Thelander

Abstract: Emerging theoretical concepts for quantum technologies have driven a continuous search for structures where a quantum state, such as spin, can be manipulated efficiently. Central to many concepts is the ability to control a system by electric and magnetic fields, relying on strong spin-orbit interaction and a large g-factor. Here, we present a new mechanism for spin and orbital manipulation using… ▽ More Emerging theoretical concepts for quantum technologies have driven a continuous search for structures where a quantum state, such as spin, can be manipulated efficiently. Central to many concepts is the ability to control a system by electric and magnetic fields, relying on strong spin-orbit interaction and a large g-factor. Here, we present a new mechanism for spin and orbital manipulation using small electric and magnetic fields. By hybridizing specific quantum dot states at two points inside InAs nanowires, nearly perfect quantum rings form. Large and highly anisotropic effective g-factors are observed, explained by a strong orbital contribution. Importantly, we find that the orbital and spin-orbital contributions can be efficiently quenched by simply detuning the individual quantum dot levels with an electric field. In this way, we demonstrate not only control of the effective g-factor from 80 to almost 0 for the same charge state, but also electrostatic change of the ground state spin. △ Less

Submitted 16 May, 2019; originally announced May 2019.

Journal ref: Nature Communications 10, 5740 (2019)

Potential jumps at transport bottlenecks cause instability of nominally ionic solid electrolytes in electrochemical cells

Authors: Yanhao Dong, Zhichao Zhang, Ana Alvarez, I-Wei Chen

Abstract: Normal operations of electrochemical devices such as solid oxide fuel cells (SOFC), solid oxide electrolyzer cells (SOEC) and lithium ion batteries (LIB) sometimes fail because of unexpected formation of internal phases. These phases include oxygen bubbles at grain boundaries inside the zirconia electrolyte of SOEC, isolated Li metal islands inside the (garnet type) Li7La3Zr2O12 electrolyte of all… ▽ More Normal operations of electrochemical devices such as solid oxide fuel cells (SOFC), solid oxide electrolyzer cells (SOEC) and lithium ion batteries (LIB) sometimes fail because of unexpected formation of internal phases. These phases include oxygen bubbles at grain boundaries inside the zirconia electrolyte of SOEC, isolated Li metal islands inside the (garnet type) Li7La3Zr2O12 electrolyte of all-solid-state LIB, and similar Na metal islands inside the Na-beta-alumina and NASICON electrolytes of Na-S batteries. Remarkably, although the devices can operate in both polarities, the propensity for failure depends on the polarity. Here we explain these and other phenomena in nominally ionic solid electrolytes and mixed-conducting electrodes in simple thermodynamic and kinetic terms: the unexpected internal phases are caused by a large potential jump that is needed to push a constant ion or electron flow through its internal transport bottleneck. Definite rules for internal phase formation including its polarity dependence are formulated to help predict and mitigate it, which leads to microstructural instability, efficiency deterioration and breakdown. △ Less

Submitted 10 May, 2020; v1 submitted 12 December, 2018; originally announced December 2018.

Journal ref: Acta Materialia 199 (2020): 264-277

Inversion of oxygen potential transitions at grain boundaries of SOFC/SOEC electrolytes

Authors: Yanhao Dong, I-Wei Chen

Abstract: Solid oxide fuel/electrolyzer cell (SOFC/SOEC) converts energy between chemical and electrical forms inversely. Yet electrolyte degradation takes place much more severe for SOEC than SOFC during long-term operations. By solving transport equations, we found very large oxygen potential gradients and sharp oxygen potential transitions at grain boundaries of polycrystalline SOFC/SOEC electrolyte. Sur… ▽ More Solid oxide fuel/electrolyzer cell (SOFC/SOEC) converts energy between chemical and electrical forms inversely. Yet electrolyte degradation takes place much more severe for SOEC than SOFC during long-term operations. By solving transport equations, we found very large oxygen potential gradients and sharp oxygen potential transitions at grain boundaries of polycrystalline SOFC/SOEC electrolyte. Surprisingly, an inversion of oxygen potential transitions was identified, suggesting a fundamentally different transport mechanism for minor electronic charge carriers. Such findings could be critical to understand and eliminate SOFC/SOEC degradations in practical applications. △ Less

Submitted 21 October, 2018; originally announced October 2018.

Electron Localization Enhances Cation Diffusion in Reduced ZrO2, CeO2 and BaTiO3

Authors: Yanhao Dong, Liang Qi, Ju Li, I-Wei Chen

Abstract: According to defect chemistry, the experimental observations of enhanced cation diffusion in a reducing atmosphere in zirconia, ceria and barium titanate are in support of an interstitial mechanism. Yet previous computational studies always found a much higher formation energy for cation interstitials than for cation vacancies, which would rule out the interstitial mechanism. The conundrum has bee… ▽ More According to defect chemistry, the experimental observations of enhanced cation diffusion in a reducing atmosphere in zirconia, ceria and barium titanate are in support of an interstitial mechanism. Yet previous computational studies always found a much higher formation energy for cation interstitials than for cation vacancies, which would rule out the interstitial mechanism. The conundrum has been resolved via first-principles calculations comparing migration of reduced cations and oxidized ones, in cubic ZrO2, CeO2 and BaTiO3. In nearly all cases, reduction alone lowers the migration barrier, and pronounced lowering results if cation's electrostatic energy at the saddle point decreases. The latter is most effectively realized when a Ti cation is allowed to migrate via an empty Ba site thus being fully screened all the way by neighboring anions. Since reduction creates oxygen vacancies as well, which are highly mobile, we also studied their effect on cation migration, and found it only marginally lowers the migration barrier. In several cases, however, a large synergistic effect between cation reduction and oxygen vacancy is revealed, causing an electron to localize in the saddle-point state at a much lower energy than normal, signaling that the saddle point is a negative-U state in which the soft environment enables a large electron-phonon interaction that can over-compensate the on-site Coulomb repulsion. These general findings are expected to be applicable to defect-mediated ion migration in most transitional metal oxides. △ Less

Submitted 15 August, 2018; originally announced August 2018.

Comments: arXiv admin note: text overlap with arXiv:1808.05196

Electron Localization Enhances Cation Diffusion in Transition Metal Oxides: An Electronic Trebuchet Effect

Authors: Yanhao Dong, Liang Qi, Ju Li, I-Wei Chen

Abstract: Ion diffusion is a central part of materials physics of fabrication, deformation, phase transformation, structure stability and electrochemical devices. Conventional theory focuses on the defects that mediate diffusion and explains how their populations influenced by oxidation, reduction, irradiation and doping can enhance diffusion. However, we have found the same influences can also elevate thei… ▽ More Ion diffusion is a central part of materials physics of fabrication, deformation, phase transformation, structure stability and electrochemical devices. Conventional theory focuses on the defects that mediate diffusion and explains how their populations influenced by oxidation, reduction, irradiation and doping can enhance diffusion. However, we have found the same influences can also elevate their mobility by orders of magnitude in several prototypical transition-metal oxides. First-principles calculation fundamentally connects the latter observation to migrating ion's local structure, which is inherently soft and has a broken symmetry, making it susceptible to electron or hole localization, thereby realizing a lower saddle-point energy. This finding resolves an unanswered question in physical ceramics of the past 30 years: why cation diffusion against the prediction of classical nonstoichiometric defect physics is enhanced in reduced zirconia, ceria and structurally related ceramics? It also suggests the saddle-point electron-phonon interaction that enables a negative-U state is akin to the counterweight effect that enables a trebuchet. This simple picture for the transitional state explains why enhanced kinetics mediated by radical-like-ion migration occurs often, especially under extreme conditions. △ Less

Submitted 19 August, 2019; v1 submitted 15 August, 2018; originally announced August 2018.

Comments: arXiv admin note: text overlap with arXiv:1808.05198

Oxygen Potential Transition in Mixed Conducting Oxide Electrolyte

Authors: Yanhao Dong, I-Wei Chen

Abstract: It is generally assumed that oxygen potential in a thin oxide electrolyte follows a linear distribution between electrodes. Jacobsen and Mogensen have shown, however, that this is not the case for thin zirconia membranes in solid oxide electrochemical cells. Here we demonstrate that there is a ubiquitous oxygen potential transition rooted in the p-type/n-type transition of electronic conductivity… ▽ More It is generally assumed that oxygen potential in a thin oxide electrolyte follows a linear distribution between electrodes. Jacobsen and Mogensen have shown, however, that this is not the case for thin zirconia membranes in solid oxide electrochemical cells. Here we demonstrate that there is a ubiquitous oxygen potential transition rooted in the p-type/n-type transition of electronic conductivity inside mixed conducting oxides, and that the transition is extremely sensitive to electrode potential and current density. It is also remarkably sensitive to the conductivity ratio of electrons and holes, as well as their association with lattice oxygens and vacancies, which tends to increase the oxygen flow. Direct evidence of a sharp oxygen potential transition has been found in an equally sharp grain size transition in electrically loaded zirconia. More broadly speaking, the oxygen potential transition is akin to a first-order phase transition. Therefore, it will suffer interface instability, especially in high-current-density devices. These findings provide new opportunities to understand several disparate observations in the literature, from microstructural degradation and stress distribution in solid oxide fuel/electrolyzer cells, to field-assisted sintering, to conducting filaments in resistance memory, to dendrite formation in electrochemical cells. △ Less

Submitted 7 July, 2018; originally announced July 2018.

Journal ref: Acta Materialia 156 (2018): 399-410

A Si-memristor electronically and uniformly switched by a constant voltage

Authors: Yang Lu, I-Wei Chen

Abstract: Amorphous insulators have localized wave functions that decay with the distance $r$ following exp($-r/ζ$). Since nanoscale conduction is not excluded at $r<ζ$, one may use amorphous insulators and take advantage of their size effect for nanoelectronic applications. Voltage-regulated nanoscale conductivity is already utilized in metal-insulator-metal devices known as memristors. But typically their… ▽ More Amorphous insulators have localized wave functions that decay with the distance $r$ following exp($-r/ζ$). Since nanoscale conduction is not excluded at $r<ζ$, one may use amorphous insulators and take advantage of their size effect for nanoelectronic applications. Voltage-regulated nanoscale conductivity is already utilized in metal-insulator-metal devices known as memristors. But typically their tunable conductivity does not come from electrons but from migrating ions within a stoichastically formed filament, and as such their combined resistor-memory performance suffers. Here we demonstrate amorphous-silicon-based memristors can have coherent electron wave functions extending to the full device thickness, exceeding 15 nm. Remarkably, despite the large aspect ratio and very thin thickness of the device, its electrons still follow an isotropic, three-dimensional pathway, thus providing uniform conductivity at the nanometer scale. Such pathways in amorphous insulators are derived from overlapping gap states and regulated by trapped charge, which is stabilized by electron-lattice interaction; this makes the memristor exhibit pressure-triggered insulator$\rightarrow$metal transitions. Fast, uniform, durable, low-power and purely electronic memristors with none of the shortcomings of ion-migrating memristors have been fabricated from a variety of amorphous silicon compositions and can be readily integrated into silicon technology. Therefore, amorphous silicon may provide the ideal platform for building proximal memories, transistors and beyond. △ Less

Submitted 11 June, 2018; originally announced June 2018.

Journal ref: Nature Electronics 2.2 (2019): 66

Purely electronic nanometallic ReRAM

Authors: Yang Lu, Jung Ho Yoon, Yanhao Dong, I-Wei Chen

Abstract: Resistance switching random access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND (NAND) flash memory. Such resistance modulation usually involves ion migration and filament formation, which usually lead to relatively low device reliability and yield. Resistance switchi… ▽ More Resistance switching random access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND (NAND) flash memory. Such resistance modulation usually involves ion migration and filament formation, which usually lead to relatively low device reliability and yield. Resistance switching can also come from an entirely electronic origin, as in nanometallic memory, by electron trapping and detrapping. Recent research has revealed additional merits of its mechanism, which entails smart, atomic-sized floating gates that can be easily engineered in amorphous Si, oxides, and nitrides. This article addresses the basic ideas of nanometallic ReRAM, which may also be a contender for analogue computing and non-von Neumann-type computation. △ Less

Submitted 9 April, 2018; originally announced April 2018.

Electrical and Hydrogen Reduction Enhances Kinetics in Doped Zirconia and Ceria: II. Mapping Electrode Polarization and Vacancy Condensation in YSZ

Authors: Yanhao Dong, I-Wei Chen

Abstract: Knowing the correlation between grain boundary mobility and oxygen potential in yttria stabilized zirconia (YSZ), we have utilized the grain size as a microstructural marker to map local oxygen potential. Abrupt oxygen potential transition is established under a large current density and in thicker samples. Cathodically depressed oxygen potential can be easily triggered by poor electrode kinetics… ▽ More Knowing the correlation between grain boundary mobility and oxygen potential in yttria stabilized zirconia (YSZ), we have utilized the grain size as a microstructural marker to map local oxygen potential. Abrupt oxygen potential transition is established under a large current density and in thicker samples. Cathodically depressed oxygen potential can be easily triggered by poor electrode kinetics or in an oxygen-lean environment. Widespread cavitation in the presence of highly reducing oxygen potential suggests oxygen vacancy condensation instead of oxygen bubble formation as commonly assumed for solid oxide fuel/electrolysis cells. These results also suggest electrode kinetics has a direct influence on the microstructure and properties of ceramics sintered under a large electric current. △ Less

Submitted 9 October, 2017; v1 submitted 4 October, 2017; originally announced October 2017.

Journal ref: Journal of the American Ceramic Society 101.3 (2018): 1058-1073

Thermoelectric power factor limit of a 1D nanowire

Authors: I-Ju Chen, Adam Burke, Artis Svilans, Heiner Linke, Claes Thelander

Abstract: In the past decade, there has been significant interest in the potentially advantageous thermoelectric properties of one-dimensional (1D) nanowires, but it has been challenging to find high thermoelectric power factors based on 1D effect in practice. Here we point out that there is an upper limit to the thermoelectric power factor of non-ballistic 1D nanowires, as a consequence of the recently est… ▽ More In the past decade, there has been significant interest in the potentially advantageous thermoelectric properties of one-dimensional (1D) nanowires, but it has been challenging to find high thermoelectric power factors based on 1D effect in practice. Here we point out that there is an upper limit to the thermoelectric power factor of non-ballistic 1D nanowires, as a consequence of the recently established quantum bound of thermoelectric power output. We experimentally test this limit in quasi-ballistic InAs nanowires by extracting the maximum power factor of the first 1D subband through I-V characterization, finding that the measured maximum power factors conform to the theoretical limit. The established limit predicts that a competitive power factor, on the order of mW/m-K^2, can be achieved by a single 1D electronic channel in state-of-the-art semiconductor nanowires with small cross-section and high crystal quality. △ Less

Submitted 29 September, 2017; originally announced September 2017.

Journal ref: Phys. Rev. Lett. 120, 177703 (2018)

Single-nanowire, low-bandgap hot carrier solar cells with tunable open-circuit voltage

Authors: Steven Limpert, Adam Burke, I-Ju Chen, Nicklas Anttu, Sebastian Lehmann, Sofia Fahlvik, Stephen Bremner, Gavin Conibeer, Claes Thelander, Mats-Erik Pistol, Heiner Linke

Abstract: Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated "hot carriers" before they cool to the lattice temperature. Hot carrier solar cells have been demonstrated in high-bandgap ferroelectric insulators and GaAs/AlGaAs heterostructures, but so far not in low-bandgap materials, where… ▽ More Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated "hot carriers" before they cool to the lattice temperature. Hot carrier solar cells have been demonstrated in high-bandgap ferroelectric insulators and GaAs/AlGaAs heterostructures, but so far not in low-bandgap materials, where the potential efficiency gain is highest. Recently, a high open-circuit voltage was demonstrated in an illuminated wurtzite InAs nanowire with a low bandgap of 0.39 eV, and was interpreted in terms of a photothermoelectric effect. Here, we point out that this device is a hot carrier solar cell and discuss its performance in those terms. In the demonstrated devices, InP heterostructures are used as energy filters in order to thermoelectrically harvest the energy of hot electrons photogenerated in InAs absorber segments. The obtained photovoltage depends on the heterostructure design of the energy filter and is therefore tunable. By using a high-resistance, thermionic barrier an open-circuit voltage is obtained that is in excess of the Shockley-Queisser limit. These results provide generalizable insight into how to realize high voltage hot carrier solar cells in low-bandgap materials, and therefore are a step towards the demonstration of higher efficiency hot carrier solar cells. △ Less

Submitted 16 August, 2017; originally announced August 2017.

Grain Growth with Size-Dependent or Statistically Distributed Mobility

Authors: Yanhao Dong, I-Wei Chen

Abstract: Conventional grain growth is rate-limited by the mobility of grain boundary. To describe similar phenomena limited by the mobility of other grain junctions, we have developed a general theory allowing for size-dependent mobility and its statistical variance. We obtained analytic solutions for the steady-state size distribution and the growth exponent, defined as (grain size)n ~ time, down to n=1,… ▽ More Conventional grain growth is rate-limited by the mobility of grain boundary. To describe similar phenomena limited by the mobility of other grain junctions, we have developed a general theory allowing for size-dependent mobility and its statistical variance. We obtained analytic solutions for the steady-state size distribution and the growth exponent, defined as (grain size)n ~ time, down to n=1, which arises when the mobility of three-grain lines is rate-limiting. When the mobility of four-grain junctions is rate-limiting, exponential growth and a bifurcating size distribution result. These solutions manifest a general trend: The size distribution narrows with increasing n. Yet experimentally the opposite trend has been observed recently, which can only be reproduced in simulation if the mobility distribution is made at lease bimodal, with one mode being immobile or nearly immobile. The latter can be realized in slow grain growth below the temperature of mobility transition. △ Less

Submitted 14 August, 2017; v1 submitted 14 August, 2017; originally announced August 2017.

Mobility Transition at Grain Boundaries in Two-Step Sintered 8 mol% Yttria Stabilized Zirconia

Authors: Yanhao Dong, I-Wei Chen

Abstract: Stagnation of grain growth is often attributed to impurity segregation. Yttria-stabilized cubic zirconia does not evidence any segregation-induced slowdown, as its grain growth obeys the parabolic law when the grain size increases by more than one order of magnitude. However, lowering the temperature below 1300 oC triggers an abrupt slowdown, constraining the average grains to grow by less than 0.… ▽ More Stagnation of grain growth is often attributed to impurity segregation. Yttria-stabilized cubic zirconia does not evidence any segregation-induced slowdown, as its grain growth obeys the parabolic law when the grain size increases by more than one order of magnitude. However, lowering the temperature below 1300 oC triggers an abrupt slowdown, constraining the average grains to grow by less than 0.5 $μ$m in 1000 h despite a relatively large driving force imparted in the fine grains of ~0.5 $μ$m. Yet isolated pockets of abnormally large grains, along with pockets of abnormally small grains, emerge in the same latter sample. Such microstructure bifurcation has never been observed before, and can only be explained by an inhomogeneous distribution of immobile four-grain junctions. The implications of these findings for two-step sintering are discussed. △ Less

Submitted 14 August, 2017; v1 submitted 14 August, 2017; originally announced August 2017.

Journal ref: Journal of the American Ceramic Society 101.5 (2018): 1857-1869

Scalability of Voltage-Controlled Filamentary and Nanometallic Resistance Memories

Authors: Yang Lu, Jong Ho Lee, I-Wei Chen

Abstract: Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but there still lacks a rational physical basis to be relied on to design scalable devices spanning many length scales. In particular, the critical switching criterion is not clear for RRAM devices in which resistance changes are limited to locali… ▽ More Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but there still lacks a rational physical basis to be relied on to design scalable devices spanning many length scales. In particular, the critical switching criterion is not clear for RRAM devices in which resistance changes are limited to localized nanoscale filaments that experience concentrated heat, electric current and field. Here, we demonstrate voltage-controlled resistance switching for macro and nano devices in both filamentary RRAM and nanometallic RRAM, the latter switches uniformly and does not require forming. As a result, using a constant current density as the compliance, we have achieved area-scalability for the low resistance state of the filamentary RRAM, and for both the low and high resistance states of the nanometallic RRAM. This finding will help design area-scalable RRAM at the nanoscale. △ Less

Submitted 11 April, 2017; originally announced April 2017.

Comments: 4 figures, 2 tables

Conducting Electrons in Amorphous Si Nanostructures: Coherent Interference and Metal-Insulator Transitions Mediated by Local Structures

Authors: Yang Lu, I-Wei Chen

Abstract: Without a periodic reference framework, local structures in noncrystalline solids are difficult to specify, but they still exert an enormous influence on materials properties. For example, thermomechanical responses of organic and inorganic glasses sensitively depend on the distribution of free volume or soft spots$^{1,2}$. Meanwhile, strong electron localization$^{3}$ that endows unparalleled ele… ▽ More Without a periodic reference framework, local structures in noncrystalline solids are difficult to specify, but they still exert an enormous influence on materials properties. For example, thermomechanical responses of organic and inorganic glasses sensitively depend on the distribution of free volume or soft spots$^{1,2}$. Meanwhile, strong electron localization$^{3}$ that endows unparalleled electrical breakdown strengths to amorphous insulators is easily compromised by local defects that promote inelastic tunneling over a variable range$^{4,5}$. Here we report how metallic conduction can overcome strong localization in amorphous insulators of small dimensions, and how local structures can manifest their spectacular influence on such conduction. In amorphous Si, nanoscale electrons are so coherent that they exhibit robust quantum interferences reminiscent of the mesoscopic phenomena seen in weakly localized metal crystals$^{6}$. Yet ultrasoft Si bonds emerge as the key local structures whose extraordinarily strong electron-phonon interaction coerces itinerant electrons into moving slowly at low temperature, even becoming trapped at all temperature when Si-O/N sites are provided. The local structures can be manipulated by a voltage or pressure to regulate charge storage, charge flow and metal-insulator transition. Also made of Ge and oxides and nitrides, nanostructured amorphous conductors could offer opportunities for new applications. △ Less

Submitted 6 March, 2017; originally announced March 2017.

Pressure-Induced Insulator-to-Metal Transition Provides Evidence for Negative-$U$ Centers in Large-Gap Disordered Insulators

Authors: Yang Lu, I-Wei Chen

Abstract: Attractive negative-$U$ interactions between electrons facilitated by strong electron-phonon interaction are common in highly polarizable and disordered materials such as amorphous chalcogenides, but there is no direct evidence for them in large-band-gap insulators. Here we report how such negative-$U$ centers are responsible for widespread insulator-to-metal transitions in amorphous HfO$_2$ and A… ▽ More Attractive negative-$U$ interactions between electrons facilitated by strong electron-phonon interaction are common in highly polarizable and disordered materials such as amorphous chalcogenides, but there is no direct evidence for them in large-band-gap insulators. Here we report how such negative-$U$ centers are responsible for widespread insulator-to-metal transitions in amorphous HfO$_2$ and Al$_2$O$_3$ thin films with a 10$^9$-fold resistance drop. Triggered by a static hydraulic pressure or a 0.1 ps impulse of magnetic pressure, the transition can proceed at such low pressure that there is very little overall deformation (strain~10$^{-5}$). Absent a significant energy change overall, the transition is attributed to the reversal of localized electron-phonon interaction: By reversing the sign of $U$, trapped electrons are destabilized and released, thus clearing conduction paths previously blocked by charged traps. The results also suggest that Mott insulators when disordered may become Anderson insulators with strong electron-phonon interactions regulating incipient conduction paths, a novel finding of technological significance for electronic devices. △ Less

Submitted 6 March, 2017; originally announced March 2017.

A Computational Study of Yttria-Stabilized Zirconia: II. Cation Diffusion

Authors: Yanhao Dong, Liang Qi, Ju Li, I-Wei Chen

Abstract: Cubic yttria-stabilized zirconia is widely used in industrial electrochemical devices. While its fast oxygen ion diffusion is well understood, why cation diffusion is much slower-its activation energy (~5 eV) is 10 times that of anion diffusion-remains a mystery. Indeed, all previous computational studies predicted more than 5 eV is needed for forming a cation defect, and another 5 eV for moving o… ▽ More Cubic yttria-stabilized zirconia is widely used in industrial electrochemical devices. While its fast oxygen ion diffusion is well understood, why cation diffusion is much slower-its activation energy (~5 eV) is 10 times that of anion diffusion-remains a mystery. Indeed, all previous computational studies predicted more than 5 eV is needed for forming a cation defect, and another 5 eV for moving one. In contrast, our ab initio calculations have correctly predicted the experimentally observed cation diffusivity. We found Schottky pairs are the dominant defects that provide cation vacancies, and their local environments and migrating path are dictated by packing preferences. As a cation exchanges position with a neighboring vacancy, it passes by an empty interstitial site and severely displaces two oxygen neighbors with shortened Zr-O distances. This causes a short-range repulsion against the migrating cation and a long-range disturbance of the surrounding, which explains why cation diffusion is relatively difficult. In comparison, cubic zirconia's migrating oxygen only minimally disturbs neighboring Zr, which explains why it is a fast oxygen conductor. △ Less

Submitted 20 April, 2017; v1 submitted 19 January, 2017; originally announced January 2017.

Journal ref: Acta Mater. 126 (2017) 438-450

A Computational Study of Yttria-Stabilized Zirconia: I. Using Crystal Chemistry to Search for the Ground State on a Glassy Energy Landscape

Authors: Yanhao Dong, Liang Qi, Ju Li, I-Wei Chen

Abstract: Yttria-stabilized zirconia (YSZ), a ZrO2-Y2O3 solid solution that contains a large population of oxygen vacancies, is widely used in energy and industrial applications. Past computational studies correctly predicted the anion diffusivity but not the cation diffusivity, which is important for material processing and stability. One of the challenges lies in identifying a plausible configuration akin… ▽ More Yttria-stabilized zirconia (YSZ), a ZrO2-Y2O3 solid solution that contains a large population of oxygen vacancies, is widely used in energy and industrial applications. Past computational studies correctly predicted the anion diffusivity but not the cation diffusivity, which is important for material processing and stability. One of the challenges lies in identifying a plausible configuration akin to the ground state in a glassy landscape. This is unlikely to come from random sampling of even a very large sample space, but the odds are much improved by incorporating packing preferences revealed by a modest sized configurational library established from empirical potential calculations. Ab initio calculations corroborated these preferences, which prove remarkably robust extending to the fifth cation-oxygen shell about 8 Å away. Yet because of frustration there are still rampant violations of packing preferences and charge neutrality in the ground state, and the approach toward it bears a close analogy to glass relaxations. Fast relaxations proceed by fast oxygen movement around cations, while slow relaxations require slow cation diffusion. The latter is necessarily cooperative because of strong coupling imposed by the long-range packing preferences. △ Less

Submitted 20 April, 2017; v1 submitted 18 January, 2017; originally announced January 2017.

Journal ref: Acta Mater. 127 (2017) 73-84

Probing Intrinsic Material Conductivity in Two-Terminal Devices: A Resistance-Difference Method

Authors: Yang Lu, I-Wei Chen

Abstract: It is generally impossible to separately measure the resistance of the functional component (i.e., the intrinsic device materials) and the parasitic component (i.e., terminals, interfaces and serial loads) in a two-terminal device. Yet such knowledge is important for understanding device physics and designing device systems. Here, we consider a case where an electric current, temperature, or magne… ▽ More It is generally impossible to separately measure the resistance of the functional component (i.e., the intrinsic device materials) and the parasitic component (i.e., terminals, interfaces and serial loads) in a two-terminal device. Yet such knowledge is important for understanding device physics and designing device systems. Here, we consider a case where an electric current, temperature, or magnetic field causes a small but identical relative conductivity change of the device materials. We find an exact solution to this relative change by a simple resistance-data analysis of similarly configured two-terminal devices. The solution is obtainable even if the change is quite small, say, less than 0.1%. In special cases of small relative changes in parasitic resistance, the absolute parasitic resistance is also obtainable. Our method is especially useful for studying the switching and transport characteristics of the emergent non-volatile resistance memory. △ Less

Submitted 11 November, 2016; v1 submitted 24 October, 2016; originally announced October 2016.

Solitons in cavity-QED arrays containing interacting qubits

Authors: I. -H. Chen, Y. Y. Lin, Y. -C. Lai, E. S. Sedov, A. P. Alodjants, S. M. Arakelian, R. -K. Lee

Abstract: We reveal the existence of polariton soliton solutions in the array of weakly coupled optical cavities, each containing an ensemble of interacting qubits. An effective complex Ginzburg-Landau equation is derived in the continuum limit taking into account the effects of cavity field dissipation and qubit dephasing. We have shown that an enhancement of the induced nonlinearity can be achieved by two… ▽ More We reveal the existence of polariton soliton solutions in the array of weakly coupled optical cavities, each containing an ensemble of interacting qubits. An effective complex Ginzburg-Landau equation is derived in the continuum limit taking into account the effects of cavity field dissipation and qubit dephasing. We have shown that an enhancement of the induced nonlinearity can be achieved by two order of the magnitude with a negative interaction strength which implies a large negative qubit-field detuning as well. Bright solitons are found to be supported under perturbations only in the upper (optical) branch of polaritons, for which the corresponding group velocity is controlled by tuning the interacting strength. With the help of perturbation theory for solitons, we also demonstrate that the group velocity of these polariton solitons is suppressed by the diffusion process. △ Less

Submitted 31 July, 2012; originally announced July 2012.

Blue photoluminescence from chemically derived graphene oxide

Authors: Goki Eda, Yun-Yue Lin, Cecilia Mattevi, Hisato Yamaguchi, Hsin-An Chen, I-Sheng Chen, Chun-Wei Chen, Manish Chhowalla

Abstract: Fluorescent organic compounds are of significant importance to the development of low-cost opto-electronic devices. Blue fluorescence from aromatic or olefinic molecules and their derivatives is particularly important for display and lighting applications. Thin film deposition of low-molecular-weight fluorescent organic compounds typically requires costly vacuum evaporation systems. On the other… ▽ More Fluorescent organic compounds are of significant importance to the development of low-cost opto-electronic devices. Blue fluorescence from aromatic or olefinic molecules and their derivatives is particularly important for display and lighting applications. Thin film deposition of low-molecular-weight fluorescent organic compounds typically requires costly vacuum evaporation systems. On the other hand, solution-processable polymeric counterparts generally luminesce at longer wavelengths due to larger delocalization in the chain. Blue light emission from solution-processed materials is therefore of unique technological significance. Here we report near-UV to blue photoluminescence (PL) from solution-processed graphene oxide (GO). The characteristics of the PL and its dependence on the reduction of GO indicates that it originates from the recombination of electron-hole (e-h) pairs localized within small sp2 carbon clusters embedded within an sp3 matrix. These results suggest that a sheet of graphene provides a parent structure on which fluorescent components can be chemically engineered without losing the macroscopic structural integrity. Our findings offer a unique route towards solution-processable opto-electronics devices with graphene. △ Less

Submitted 13 September, 2009; originally announced September 2009.

Comments: Accepted for publication in Adv. Mater

Landscape phage, phage display, stripped phage, biosensors, detection, affinity reagent, nanotechnology, Salmonella typhimurium, Bacillus anthracis

Authors: V. Petrenko, J. Brigati, J. Sykora, Eric V. Olsen, I. Sorokulova, G. Kouzmitcheva, I-Hsuan Chen, J. Barbaree, B. Chin, V. Vodyanoy

Abstract: Filamentous phage, such as fd used in this study, are thread-shaped bacterial viruses. Their outer coat is a tube formed by thousands equal copies of the major coat protein pVIII. We constructed libraries of random peptides fused to all pVIII domains and selected phages that act as probes specific for a panel of test antigens and biological threat agents. Because the viral carrier is infective,… ▽ More Filamentous phage, such as fd used in this study, are thread-shaped bacterial viruses. Their outer coat is a tube formed by thousands equal copies of the major coat protein pVIII. We constructed libraries of random peptides fused to all pVIII domains and selected phages that act as probes specific for a panel of test antigens and biological threat agents. Because the viral carrier is infective, phage borne bio-selective probes can be cloned individually and propagated indefinitely without needs of their chemical synthesis or reconstructing. We demonstrated the feasibility of using landscape phages and their stripped fusion proteins as new bioselective materials that combine unique characteristics of affinity reagents and self assembling membrane proteins. Biorecognition layers fabricated from phage-derived probes bind biological agents and generate detectable signals. The performance of phage-derived materials as biorecognition films was illustrated by detection of streptavidin-coated beads, Bacillus anthracis spores and Salmonella typhimurium cells. With further refinement, the phage-derived analytical platforms for detecting and monitoring of numerous threat agents may be developed, since the biodetector films may be obtained from landscape phages selected against any bacteria, virus or toxin. As elements of field-use detectors, they are superior to antibodies, since they are inexpensive, highly specific and strong binders, resistant to high temperatures and environmental stresses. △ Less

Submitted 14 August, 2007; originally announced August 2007.

Comments: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions)

Journal ref: Dans European Nano Systems Worshop - ENS 2005, Paris : France (2005)

Fusion Phage as a Bioselective Nanomaterial : Evolution of the Concept

Authors: Valery A. Petrensko, S. -N. Ustino, I-Hsuan Chen

Abstract: Multibillion-clone landscape phage display libraries were prepared by the fusion of the phage major coat protein pVIII with foreign random peptides. Phage particles and their proteins specific for cancer and bacterial cells were selected from the landscape libraries and exploited as molecular recognition interfaces in detection, gene- and drug-delivery systems. The biorecognition interfaces were… ▽ More Multibillion-clone landscape phage display libraries were prepared by the fusion of the phage major coat protein pVIII with foreign random peptides. Phage particles and their proteins specific for cancer and bacterial cells were selected from the landscape libraries and exploited as molecular recognition interfaces in detection, gene- and drug-delivery systems. The biorecognition interfaces were obtained by incorporation of the cell-specific phage fusion proteins into liposomes using intrinsic structural duplicity of the proteins. As a paradigm, we incorporated targeted pVIII proteins into commercially available therapeutic liposomes "Doxil", which acquired a new emergent property-ability to bind target receptors. Targeting of the drug was evidenced by fluorescence-activated cell sorting, microarray, optical and electron microscopy. In contrast to a poorly controllable conjugation targeting, the new landscape phage-based approach relies on very powerful and extremely precise mechanisms of selection, biosynthesis and self assembly, in which phages themselves serve as a source of the final product. △ Less

Submitted 10 August, 2007; originally announced August 2007.

Comments: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions)

Journal ref: Dans European Nano Systems Worshop - ENS 2006, Paris : France (2006)

Dynamic Kerr Effect and Spectral Weight Transfer in the Manganites

Authors: S. A. McGill, R. I. Miller, O. N. Torrens, A. Mamchik, I-Wei Chen, J. M. Kikkawa

Abstract: We perform pump-probe Kerr spectroscopy in the colossally magnetoresistive manganite Pr0.67Ca0.33MnO3. Kerr effects uncover surface magnetic dynamics undetected by established methods based on reflectivity and optical spectral weight transfer. Our findings indicate the connection between spin and charge dynamics in the manganites may be weaker than previously thought. Additionally, important dif… ▽ More We perform pump-probe Kerr spectroscopy in the colossally magnetoresistive manganite Pr0.67Ca0.33MnO3. Kerr effects uncover surface magnetic dynamics undetected by established methods based on reflectivity and optical spectral weight transfer. Our findings indicate the connection between spin and charge dynamics in the manganites may be weaker than previously thought. Additionally, important differences between this system and conventional ferromagnetic metals manifest as long-lived, magneto-optical coupling transients, which may be generic to all manganites. △ Less

Submitted 18 March, 2004; v1 submitted 19 November, 2003; originally announced November 2003.

Comments: 12 text pages, 4 figures