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Engineering 2D material exciton lineshape with graphene/h-BN encapsulation
Authors:
Steffi Y. Woo,
Fuhui Shao,
Ashish Arora,
Robert Schneider,
Nianjheng Wu,
Andrew J. Mayne,
Ching-Hwa Ho,
Mauro Och,
Cecilia Mattevi,
Antoine Reserbat-Plantey,
Alvaro Moreno,
Hanan Herzig Sheinfux,
Kenji Watanabe,
Takashi Taniguchi,
Steffen Michaelis de Vasconcellos,
Frank H. L. Koppens,
Zhichuan Niu,
Odile Stéphan,
Mathieu Kociak,
F. Javier García de Abajo,
Rudolf Bratschitsch,
Andrea Konečná,
Luiz H. G. Tizei
Abstract:
Control over the optical properties of atomically thin two-dimensional (2D) layers, including those of transition metal dichalcogenides (TMDs), is needed for future optoelectronic applications. Remarkable advances have been achieved through alloying, chemical and electrical doping, and applied strain. However, the integration of TMDs with other 2D materials in van der Waals heterostructures (vdWHs…
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Control over the optical properties of atomically thin two-dimensional (2D) layers, including those of transition metal dichalcogenides (TMDs), is needed for future optoelectronic applications. Remarkable advances have been achieved through alloying, chemical and electrical doping, and applied strain. However, the integration of TMDs with other 2D materials in van der Waals heterostructures (vdWHs) to tailor novel functionalities remains largely unexplored. Here, the near-field coupling between TMDs and graphene/graphite is used to engineer the exciton lineshape and charge state. Fano-like asymmetric spectral features are produced in WS$_{2}$, MoSe$_{2}$ and WSe$_{2}$ vdWHs combined with graphene, graphite, or jointly with hexagonal boron nitride (h-BN) as supporting or encapsulating layers. Furthermore, trion emission is suppressed in h-BN encapsulated WSe$_{2}$/graphene with a neutral exciton redshift (44 meV) and binding energy reduction (30 meV). The response of these systems to electron-beam and light probes is well-described in terms of 2D optical conductivities of the involved materials. Beyond fundamental insights into the interaction of TMD excitons with structured environments, this study opens an unexplored avenue toward shaping the spectral profile of narrow optical modes for application in nanophotonic devices.
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Submitted 13 November, 2023;
originally announced November 2023.
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Ultra-clean assembly of van der Waals heterostructures
Authors:
Wendong Wang,
Nicholas Clark,
Matthew Hamer,
Amy Carl,
Endre Tovari,
Sam Sullivan-Allsop,
Evan Tillotson,
Yunze Gao,
Hugo de Latour,
Francisco Selles,
James Howarth,
Eli G. Castanon,
Mingwei Zhou,
Haoyu Bai,
Xiao Li,
Astrid Weston,
Kenji Watanabe,
Takashi Taniguchi,
Cecilia Mattevi,
Thomas H. Bointon,
Paul V. Wiper,
Andrew J. Strudwick,
Leonid A. Ponomarenko,
Andrey Kretinin,
Sarah J. Haigh
, et al. (2 additional authors not shown)
Abstract:
Layer-by-layer assembly of van der Waals (vdW) heterostructures underpins new discoveries in solid state physics, material science and chemistry. Despite the successes, all current 2D material (2DM) transfer techniques rely on the use of polymers which limit the cleanliness, ultimate electronic performance, and potential for optoelectronic applications of the heterostructures. In this article, we…
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Layer-by-layer assembly of van der Waals (vdW) heterostructures underpins new discoveries in solid state physics, material science and chemistry. Despite the successes, all current 2D material (2DM) transfer techniques rely on the use of polymers which limit the cleanliness, ultimate electronic performance, and potential for optoelectronic applications of the heterostructures. In this article, we present a novel polymer-free platform for rapid and facile heterostructure assembly which utilises re-usable flexible silicon nitride membranes. We demonstrate that this allows fast and reproducible production of 2D heterostructures using both exfoliated and CVD-grown materials with perfect interfaces free from interlayer contamination and correspondingly excellent electronic behaviour, limited only by the size and intrinsic quality of the crystals used. Furthermore, removing the need for polymeric carriers allows new possibilities for vdW heterostructure fabrication: assembly at high temperatures up to 600°C, and in different environments including ultra-high vacuum (UHV) and when the materials are fully submerged in liquids. We demonstrate UHV heterostructure assembly for the first time, and show the reliable creation of graphene moiré superlattices with more than an order of magnitude improvement in their structural homogeneity. We believe that broad adaptation of our novel inorganic 2D materials assembly strategy will allow realisation of the full potential of vdW heterostructures as a platform for new physics and advanced optoelectronic technologies.
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Submitted 25 August, 2023;
originally announced August 2023.
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Substrate influence on transition metal dichalcogenide monolayer exciton absorption linewidth broadening
Authors:
Fuhui Shao,
Steffi Y. Woo,
Nianjheng Wu,
Robert Schneider,
Andrew J. Mayne,
Steffen Michaelis de Vasconcellos,
Ashish Arora,
Benjamin J. Carey,
Johann A. Preuß,
Noémie Bonnet,
Cecilia Mattevi,
Kenji Watanabe,
Takashi Taniguchi,
Zhichuan Niu,
Rudolf Bratschitsch,
Luiz H. G. Tizei
Abstract:
The excitonic states of transition metal dichacolgenide (TMD) monolayers are heavily influenced by their external dielectric environment based on the substrate used. In this work, various wide bandgap dielectric materials, namely hexagonal boron nitride (\textit{h}-BN) and amorphous silicon nitride (Si$_3$N$_4$), under different configurations as support or encapsulation material for WS$_2$ monola…
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The excitonic states of transition metal dichacolgenide (TMD) monolayers are heavily influenced by their external dielectric environment based on the substrate used. In this work, various wide bandgap dielectric materials, namely hexagonal boron nitride (\textit{h}-BN) and amorphous silicon nitride (Si$_3$N$_4$), under different configurations as support or encapsulation material for WS$_2$ monolayers are investigated to disentangle the factors contributing to inhomogeneous broadening of exciton absorption lines in TMDs using electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM). In addition, monolayer roughness in each configuration was determined from tilt series of electron diffraction patterns by assessing the broadening of diffraction spots by comparison with simulations. From our experiments, the main factors that play a role in linewidth broadening can be classified in increasing order of importance by: monolayer roughness, surface cleanliness, and substrate-induced charge trapping. Furthermore, because high-energy electrons are used as a probe, electron beam-induced damage on bare TMD monolayer is also revealed to be responsible for irreversible linewidth increases. \textit{h}-BN not only provides clean surfaces of TMD monolayer, and minimal charge disorder, but can also protect the TMD from irradiation damage. This work provides a better understanding of the mechanisms by which \textit{h}-BN remains, to date, the most compatible material for 2D material encapsulation, facilitating the realization of intrinsic material properties to their full potential.
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Submitted 9 February, 2022;
originally announced February 2022.
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Spin-orbit-enhanced robustness of supercurrent in graphene/WS$_2$ Josephson junctions
Authors:
T. Wakamura,
N. J. Wu,
A. D. Chepelianskii,
S. Guéron,
M. Och,
M. Ferrier,
T. Taniguchi,
K. Watanabe,
C. Mattevi,
H. Bouchiat
Abstract:
We demonstrate enhanced robustness of the supercurrent through graphene-based Josephson junctions in which strong spin-orbit interactions (SOIs) are induced. We compare the persistence of a supercurrent at high magnetic fields between Josephson junctions with graphene on hexagonal boron-nitride and graphene on WS$_2$, where strong SOIs are induced via the proximity effect. We find that in the shor…
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We demonstrate enhanced robustness of the supercurrent through graphene-based Josephson junctions in which strong spin-orbit interactions (SOIs) are induced. We compare the persistence of a supercurrent at high magnetic fields between Josephson junctions with graphene on hexagonal boron-nitride and graphene on WS$_2$, where strong SOIs are induced via the proximity effect. We find that in the shortest junctions both systems display signatures of induced superconductivity, characterized by a suppressed differential resistance at a low current, in magnetic fields up to 1 T. In longer junctions however, only graphene on WS$_2$ exhibits induced superconductivity features in such high magnetic fields, and they even persist up to 7 T. We argue that these robust superconducting signatures arise from quasi-ballistic edge states stabilized by the strong SOIs induced in graphene by WS$_2$.
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Submitted 1 January, 2021; v1 submitted 7 September, 2020;
originally announced September 2020.
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Experimental signature of a topological quantum dot
Authors:
Marie S. Rider,
Maria Sokolikova,
Stephen M. Hanham,
Miguel Navarro-Cia,
Peter Haynes,
Derek Lee,
Maddalena Daniele,
Mariangela Cestelli Guidi,
Cecilia Mattevi,
Stefano Lupi,
Vincenzo Giannini
Abstract:
Topological insulators (TIs) present a neoteric class of materials, which support delocalised, conducting surface states despite an insulating bulk. Due to their intriguing electronic properties, their optical properties have received relatively less attention. Even less well studied is their behaviour in the nanoregime, with most studies thus far focusing on bulk samples - in part due to the tech…
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Topological insulators (TIs) present a neoteric class of materials, which support delocalised, conducting surface states despite an insulating bulk. Due to their intriguing electronic properties, their optical properties have received relatively less attention. Even less well studied is their behaviour in the nanoregime, with most studies thus far focusing on bulk samples - in part due to the technical challenges of synthesizing TI nanostructures. We study topological insulator nanoparticles (TINPs), for which quantum effects dominate the behaviour of the surface states and quantum confinement results in a discretized Dirac cone, whose energy levels can be tuned with the nanoparticle size. The presence of these discretized energy levels in turn leads to a new electron-mediated phonon-light coupling in the THz range. We present the experimental realisation of Bi$_2$Te$_3$ TINPs and strong evidence of this new quantum phenomenon, remarkably observed at room temperature. This system can be considered a topological quantum dot, with applications to room temperature THz quantum optics and quantum information technologies.
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Submitted 15 May, 2019;
originally announced May 2019.
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Spin-Orbit Interaction Induced in Graphene by Transition-Metal Dichalcogenides
Authors:
T. Wakamura,
F. Reale,
P. Palczynski,
M. Q. Zhao,
A. T. C. Johnson,
S. Guéron,
C. Mattevi,
A. Ouerghi,
H. Bouchiat
Abstract:
We report a systematic study on strong enhancement of spin-orbit interaction (SOI) in graphene driven by transition-metal dichalcogenides (TMDs). Low temperature magnetotoransport measurements of graphene proximitized to different TMDs (monolayer and bulk WSe$_2$, WS$_2$ and monolayer MoS$_2$) all exhibit weak antilocalization peaks, a signature of strong SOI induced in graphene. The amplitudes of…
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We report a systematic study on strong enhancement of spin-orbit interaction (SOI) in graphene driven by transition-metal dichalcogenides (TMDs). Low temperature magnetotoransport measurements of graphene proximitized to different TMDs (monolayer and bulk WSe$_2$, WS$_2$ and monolayer MoS$_2$) all exhibit weak antilocalization peaks, a signature of strong SOI induced in graphene. The amplitudes of the induced SOI are different for different materials and thickness, and we find that monolayer WSe$_2$ and WS$_2$ can induce much stronger SOI than bulk ones and also monolayer MoS$_2$. The estimated spin-orbit (SO) scattering strength for the former reaches $\sim$ 10 meV whereas for the latter it is around 1 meV or less. We also discuss the symmetry and type of the induced SOI in detail, especially focusing on the identification of intrinsic and valley-Zeeman (VZ) SOI via the dominant spin relaxation mechanism. Our findings offer insight on the possible realization of the quantum spin Hall (QSH) state in graphene.
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Submitted 19 February, 2019; v1 submitted 17 September, 2018;
originally announced September 2018.
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Electronic band structure of Two-Dimensional WS2/Graphene van der Waals Heterostructures
Authors:
Hugo Henck,
Zeineb Ben Aziza,
Debora Pierucci,
Feriel Laourine,
Francesco Reale,
Pawel Palczynski,
Julien Chaste,
Mathieu G. Silly,
François Bertran,
Patrick Le Fevre,
Emmanuel Lhuillier,
Taro Wakamura,
Cecilia Mattevi,
Julien E. Rault,
Matteo Calandra,
Abdelkarim Ouerghi
Abstract:
Combining single-layer two-dimensional semiconducting transition metal dichalcogenides (TMDs) with graphene layer in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these heterostructures. Here, we report the electronic and structural properties of transferred single layer WS2 on epitaxial graphene using micro-Raman spectroscopy, angle-res…
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Combining single-layer two-dimensional semiconducting transition metal dichalcogenides (TMDs) with graphene layer in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these heterostructures. Here, we report the electronic and structural properties of transferred single layer WS2 on epitaxial graphene using micro-Raman spectroscopy, angle-resolved photoemission spectroscopy measurements (ARPES) and Density Functional Theory (DFT) calculations. The results show good electronic properties as well as well-defined band arising from the strong splitting of the single layer WS2 valence band at K points, with a maximum splitting of 0.44 eV. By comparing our DFT results with local and hybrid functionals, we find the top valence band of the experimental heterostructure is close to the calculations for suspended single layer WS2. . Our results provide an important reference for future studies of electronic properties of WS2 and its applications in valleytronic devices.
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Submitted 13 June, 2018;
originally announced June 2018.
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Strong Spin-Orbit Interaction Induced in Graphene by Monolayer WS$_2$
Authors:
Taro Wakamura,
Francesco Reale,
Pawel Palczynski,
Sophie Guéron,
Cecilia Mattevi,
Hélène Bouchiat
Abstract:
We demonstrate strong anisotropic spin-orbit interaction (SOI) in graphene induced by monolayer WS$_2$. Direct comparison between graphene/monolayer WS$_2$ and graphene/bulk WS$_2$ system in magnetotransport measurements reveals that monolayer transition metal dichalcogenide (TMD) can induce much stronger SOI than bulk. Detailed theoretical analysis of the weak-antilocalization curves gives an est…
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We demonstrate strong anisotropic spin-orbit interaction (SOI) in graphene induced by monolayer WS$_2$. Direct comparison between graphene/monolayer WS$_2$ and graphene/bulk WS$_2$ system in magnetotransport measurements reveals that monolayer transition metal dichalcogenide (TMD) can induce much stronger SOI than bulk. Detailed theoretical analysis of the weak-antilocalization curves gives an estimated spin-orbit energy ($E_{\rm so}$) higher than 10 meV. The symmetry of the induced SOI is also discussed, and the dominant $z$ $\rightarrow$ $-z$ symmetric SOI can only explain the experimental results. Spin relaxation by the Elliot-Yafet (EY) mechanism and anomalous resistance increase with temperature close to the Dirac point indicates Kane-Mele (KM) SOI induced in graphene.
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Submitted 11 April, 2018; v1 submitted 20 October, 2017;
originally announced October 2017.
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3D Printing of 2D Atomically Thin Materials
Authors:
Chiara Grotta,
Peter C Sherrell,
Pawel Palczynski,
Maria Sokolikova,
Kanudha Sharda,
Cecilia Mattevi
Abstract:
The emerging new paradigm of technologies, the internet of things, entails a process of device miniaturization to combine several functional components, such as sensors, actuators, and powering elements, in a single individual on-chip platform. An essential requirement is for the devices to have a small footprint and thus to be extended over three-dimensions to present adequate performance. A suit…
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The emerging new paradigm of technologies, the internet of things, entails a process of device miniaturization to combine several functional components, such as sensors, actuators, and powering elements, in a single individual on-chip platform. An essential requirement is for the devices to have a small footprint and thus to be extended over three-dimensions to present adequate performance. A suitable technique to realize devices of complex architectures and virtually any size is three-dimensional printing. So far its use has seen applications exclusively at the macroscale. Here we report the first 3D printed architectures via robocasting of two-dimensional atomically thin transition metal dichalcogenides demonstrating their use as miniaturizable supercapacitors. The structures are fabricated via direct printing of a liquid ink of chemically exfoliated 2D nanosheets. The 3D printed architectures present footprints in the mm2 scale and micron-sized features and they demonstrate mechanical robustness and chemical stability. They exhibit areal capacitance of 1450 mF/cm2, rivalling and surpassing comparable devices. Microsupercapacitors comprising two-dimensional atomically thin sheets can enable miniaturization and upscaleable production technologies for wide-scale adoption.
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Submitted 28 September, 2018; v1 submitted 11 October, 2017;
originally announced October 2017.
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High-Mobility and High-Optical Quality Atomically Thin WS2
Authors:
Francesco Reale,
Pawel Palczynski,
Iddo Amit,
Gareth F. Jones,
Jake D. Mehew,
Agnes Bacon,
Na Ni,
Peter C. Sherrell,
Stefano Agnoli,
Monica F. Craciun,
Saverio Russo,
Cecilia Mattevi
Abstract:
The rise of atomically thin materials has the potential to enable a paradigm shift in modern technologies by introducing multi-functional materials in the semiconductor industry. To date the growth of high quality atomically thin semiconductors (e.g. WS2) is one of the most pressing challenges to unleash the potential of these materials and the growth of mono- or bi-layers with high crystal qualit…
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The rise of atomically thin materials has the potential to enable a paradigm shift in modern technologies by introducing multi-functional materials in the semiconductor industry. To date the growth of high quality atomically thin semiconductors (e.g. WS2) is one of the most pressing challenges to unleash the potential of these materials and the growth of mono- or bi-layers with high crystal quality is yet to see its full realization. Here, we show that the novel use of molecular precursors in the controlled synthesis of mono- and bi-layer WS2 leads to superior material quality compared to the widely used topotactic transformation of WO3-based precursors. Record high room temperature charge carrier mobility up to 52 cm2/Vs and ultra-sharp photoluminescence linewidth of just 36 meV over submillimeter areas demonstrate that the quality of this material supersedes also that of naturally occurring materials. By exploiting surface diffusion kinetics of W and S species adsorbed onto a substrate, a deterministic layer thickness control has also been achieved promoting the design of scalable synthesis routes.
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Submitted 24 July, 2017;
originally announced July 2017.
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Role of Charge Traps in the Performance of Atomically-Thin Transistors
Authors:
Iddo Amit,
Tobias J. Octon,
Nicola J. Townsend,
Francesco Reale,
C. David Wright,
Cecilia Mattevi,
Monica F. Craciun,
Saverio Russo
Abstract:
Transient currents in atomically thin MoTe$_2$ field-effect transistor are measured during cycles of pulses through the gate electrode. The transients are analyzed in light of a newly proposed model for charge trapping dynamics that renders a time-dependent change in threshold voltage the dominant effect on the channel hysteretic behavior over emission currents from the charge traps. The proposed…
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Transient currents in atomically thin MoTe$_2$ field-effect transistor are measured during cycles of pulses through the gate electrode. The transients are analyzed in light of a newly proposed model for charge trapping dynamics that renders a time-dependent change in threshold voltage the dominant effect on the channel hysteretic behavior over emission currents from the charge traps. The proposed model is expected to be instrumental in understanding the fundamental physics that governs the performance of atomically thin FETs and is applicable to the entire class of atomically thin-based devices. Hence, the model is vital to the intelligent design of fast and highly efficient opto-electronic devices.
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Submitted 16 March, 2017;
originally announced March 2017.
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Valence band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics
Authors:
Hisato Yamaguchi,
Shuichi Ogawa,
Daiki Watanabe,
Hideaki Hozumi,
Yongqian Gao,
Goki Eda,
Cecilia Mattevi,
Takeshi Fujita,
Akitaka Yoshigoe,
Shinji Ishizuka,
Lyudmyla Adamska,
Takatoshi Yamada,
Andrew M. Dattelbaum,
Gautam Gupta,
Stephen K. Doorn,
Kirill A. Velizhanin,
Yuden Teraoka,
Mingwei Chen,
Han Htoon,
Manish Chhowalla,
Aditya D. Mohite,
Yuji Takakuwa
Abstract:
We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 oC.…
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We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 oC. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 oC leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.
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Submitted 3 May, 2016;
originally announced May 2016.
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Modeling of the self-limited growth in catalytic chemical vapor deposition of graphene
Authors:
HoKwon Kim,
Eduardo Saiz,
Manish Chhowalla,
Cecilia Mattevi
Abstract:
The development of wafer-scale continuous single-crystal graphene layers is key in view of its prospective applications. To this end, here we pave the way for a graphene growth model in the framework of the Langmuir adsorption theory and two dimensional crystallization. In specific, we model the nucleation and growth of graphene on copper using methane as carbon precursor. The model leads to ident…
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The development of wafer-scale continuous single-crystal graphene layers is key in view of its prospective applications. To this end, here we pave the way for a graphene growth model in the framework of the Langmuir adsorption theory and two dimensional crystallization. In specific, we model the nucleation and growth of graphene on copper using methane as carbon precursor. The model leads to identification of the range of growth parameters (temperature and gas pressures) that uniquely entails the final surface coverage of graphene. This becomes an invaluable tool to address the fundamental problems of continuity of polycrystalline graphene layers, and crystalline grain dimensions. The model shows agreement with the existing experimental data in the literature. On the basis of the "contour map" for graphene growth developed here and existing evidence of optimized growth of large graphene grains, novel insights for engineering wafer-scale continuous graphene films are provided.
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Submitted 12 April, 2013; v1 submitted 1 February, 2013;
originally announced February 2013.
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Highly Uniform 300 mm Wafer-Scale Deposition of Single and Multilayered Chemically Derived Graphene Thin Films
Authors:
Hisato Yamaguchi,
Goki Eda,
Cecilia Mattevi,
HoKwon Kim,
Manish Chhowalla
Abstract:
The deposition of atomically thin highly uniform chemically derived graphene (CDG) films on 300 mm SiO2/Si wafers is reported. We demonstrate that the very thin films can be lifted off to form uniform membranes than can be free-standing or transferred onto any substrate. Detailed maps of thickness using Raman spectroscopy and atomic force microscopy (AFM) height profiles reveal that the film thi…
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The deposition of atomically thin highly uniform chemically derived graphene (CDG) films on 300 mm SiO2/Si wafers is reported. We demonstrate that the very thin films can be lifted off to form uniform membranes than can be free-standing or transferred onto any substrate. Detailed maps of thickness using Raman spectroscopy and atomic force microscopy (AFM) height profiles reveal that the film thickness is very uniform and highly controllable, ranging from 1-2 layers up to 30 layers. After reduction using a variety of methods, the CDG films are transparent and electrically active with FET devices yielding exceptionally high mobilities of ~ 15 cm2/Vs and sheet resistance of ~ 1 k Ohm/sq at ~ 70 % transparency.
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Submitted 10 December, 2009;
originally announced December 2009.
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Blue photoluminescence from chemically derived graphene oxide
Authors:
Goki Eda,
Yun-Yue Lin,
Cecilia Mattevi,
Hisato Yamaguchi,
Hsin-An Chen,
I-Sheng Chen,
Chun-Wei Chen,
Manish Chhowalla
Abstract:
Fluorescent organic compounds are of significant importance to the development of low-cost opto-electronic devices. Blue fluorescence from aromatic or olefinic molecules and their derivatives is particularly important for display and lighting applications. Thin film deposition of low-molecular-weight fluorescent organic compounds typically requires costly vacuum evaporation systems. On the other…
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Fluorescent organic compounds are of significant importance to the development of low-cost opto-electronic devices. Blue fluorescence from aromatic or olefinic molecules and their derivatives is particularly important for display and lighting applications. Thin film deposition of low-molecular-weight fluorescent organic compounds typically requires costly vacuum evaporation systems. On the other hand, solution-processable polymeric counterparts generally luminesce at longer wavelengths due to larger delocalization in the chain. Blue light emission from solution-processed materials is therefore of unique technological significance. Here we report near-UV to blue photoluminescence (PL) from solution-processed graphene oxide (GO). The characteristics of the PL and its dependence on the reduction of GO indicates that it originates from the recombination of electron-hole (e-h) pairs localized within small sp2 carbon clusters embedded within an sp3 matrix. These results suggest that a sheet of graphene provides a parent structure on which fluorescent components can be chemically engineered without losing the macroscopic structural integrity. Our findings offer a unique route towards solution-processable opto-electronics devices with graphene.
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Submitted 13 September, 2009;
originally announced September 2009.
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Insulator to semi-metal transition in graphene oxide
Authors:
Goki Eda,
Cecilia Mattevi,
Hisato Yamaguchi,
HoKwon Kim,
Manish Chhowalla
Abstract:
Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator-semiconductor-semi-metal transitions with reduction. The apparent transport gap ranges from 10 ~ 50 meV and approaches zero with extensive reduction. Measurements at varying degrees of reduction reveal that transport in reduced…
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Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator-semiconductor-semi-metal transitions with reduction. The apparent transport gap ranges from 10 ~ 50 meV and approaches zero with extensive reduction. Measurements at varying degrees of reduction reveal that transport in reduced GO occurs via variable-range hopping and further reduction leads to increased number of available hopping sites.
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Submitted 18 May, 2009;
originally announced May 2009.
