-
Valence band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics
Authors:
Hisato Yamaguchi,
Shuichi Ogawa,
Daiki Watanabe,
Hideaki Hozumi,
Yongqian Gao,
Goki Eda,
Cecilia Mattevi,
Takeshi Fujita,
Akitaka Yoshigoe,
Shinji Ishizuka,
Lyudmyla Adamska,
Takatoshi Yamada,
Andrew M. Dattelbaum,
Gautam Gupta,
Stephen K. Doorn,
Kirill A. Velizhanin,
Yuden Teraoka,
Mingwei Chen,
Han Htoon,
Manish Chhowalla,
Aditya D. Mohite,
Yuji Takakuwa
Abstract:
We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 oC.…
▽ More
We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 oC. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 oC leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.
△ Less
Submitted 3 May, 2016;
originally announced May 2016.
-
Ferromagnetism and infrared electrodynamics of Ga$_{1-x}$Mn$_{x}$As}
Authors:
B. C. Chapler,
S. Mack,
R. C. Myers,
A. Frenzel,
B. C. Pursley,
K. S. Burch,
A. M. Dattelbaum,
N. Samarth,
D. D. Awschalom,
D. N. Basov
Abstract:
We report on the magnetic and the electronic properties of the prototype dilute magnetic semiconductor Ga$_{1-x}$Mn$_x$As using infrared (IR) spectroscopy. Trends in the ferromagnetic transition temperature $T_C$ with respect to the IR spectral weight are examined using a sum-rule analysis of IR conductivity spectra. We find non-monotonic behavior of trends in $T_C$ with the spectral weight to eff…
▽ More
We report on the magnetic and the electronic properties of the prototype dilute magnetic semiconductor Ga$_{1-x}$Mn$_x$As using infrared (IR) spectroscopy. Trends in the ferromagnetic transition temperature $T_C$ with respect to the IR spectral weight are examined using a sum-rule analysis of IR conductivity spectra. We find non-monotonic behavior of trends in $T_C$ with the spectral weight to effective Mn ratio, which suggest a strong double-exchange component to the FM mechanism, and highlights the important role of impurity states and localization at the Fermi level. Spectroscopic features of the IR conductivity are tracked as they evolve with temperature, doping, annealing, As-antisite compensation, and are found only to be consistent with an Mn-induced IB scenario. Furthermore, our detailed exploration of these spectral features demonstrates that seemingly conflicting trends reported in the literature regarding a broad mid-IR resonance with respect to carrier density in Ga$_{1-x}$Mn$_x$As are in fact not contradictory. Our study thus provides a consistent experimental picture of the magnetic and electronic properties of Ga$_{1-x}$Mn$_x$As.
△ Less
Submitted 6 June, 2013;
originally announced June 2013.
-
An infrared probe of the insulator-to-metal transition in GaMnAs and GaBeAs
Authors:
B. C. Chapler,
R. C. Myers,
S. Mack,
A. Frenzel,
B. C. Pursley,
K. S. Burch,
E. J. Singley,
A. M. Dattelbaum,
N. Samarth,
D. D. Awschalom,
D. N. Basov
Abstract:
We report infrared studies of the insulator-to-metal transition (IMT) in GaAs doped with either magnetic (Mn) or non-magnetic acceptors (Be). We observe a resonance with a natural assignment to impurity states in the insulating regime of Ga$_{1-x}$Mn$_x$As, which persists across the IMT to the highest doping (16%). Beyond the IMT boundary, behavior combining insulating and metallic trends also per…
▽ More
We report infrared studies of the insulator-to-metal transition (IMT) in GaAs doped with either magnetic (Mn) or non-magnetic acceptors (Be). We observe a resonance with a natural assignment to impurity states in the insulating regime of Ga$_{1-x}$Mn$_x$As, which persists across the IMT to the highest doping (16%). Beyond the IMT boundary, behavior combining insulating and metallic trends also persists to the highest Mn doping. Be doped samples however, display conventional metallicity just above the critical IMT concentration, with features indicative of transport within the host valence band.
△ Less
Submitted 1 September, 2011;
originally announced September 2011.
-
A New Route to Fluorescent SWNT/Silica Nanocomposites: Balancing Fluorescence Intensity and Environmental Sensitivity
Authors:
Juan G. Duque,
Gautam Gupta,
Laurent Cognet,
Brahim Lounis,
Stephen K. Doorn,
Andrew M. Dattelbaum
Abstract:
We investigate the relationship between photoluminescence (PL) intensity and environmental sensitivity of surfactant-wrapped single walled carbon nanotubes (SWNTs). SWNTs were studied under a variety of conditions in suspension as well as encapsulated in silica nanocomposites, which were prepared by an efficient chemical vapor into liquids (CViL) sol-gel process. The dramatically improved silica e…
▽ More
We investigate the relationship between photoluminescence (PL) intensity and environmental sensitivity of surfactant-wrapped single walled carbon nanotubes (SWNTs). SWNTs were studied under a variety of conditions in suspension as well as encapsulated in silica nanocomposites, which were prepared by an efficient chemical vapor into liquids (CViL) sol-gel process. The dramatically improved silica encapsulation process described here has several advantages, including fast preparation and high SWNT loading concentration, over other encapsulation methods used to prepare fluorescent SWNT/silica nanocomposites. Further, addition of glycerol to SWNT suspensions prior to performing the CViL sol-gel process allows for the preparation of freestanding fluorescent silica xerogels, which to the best of our knowledge is the first report of such nanocomposites. Our spectroscopic data on SWNTs suspended in aqueous surfactants or encapsulated in silica show that achieving maximum PL intensity results in decreased sensitivity of SWNT emission response to changes imparted by the local environment. In addition, silica encapsulation can be used to "lock-in" a surfactant micelle structure surrounding SWNTs to minimize interactions between SWNTs and ions/small molecules. Ultimately, our work demonstrates that one should consider a balance between maximum PL intensity and the ability to sense environmental changes when designing new SWNT systems for future sensing applications.
△ Less
Submitted 31 August, 2011;
originally announced August 2011.
-
Relativistic Drude Response of Photoexcited Dirac Quasiparticles in Graphene
Authors:
K. M. Dani,
J. Lee,
R. Sharma,
A. D. Mohite,
C. M. Galande,
P. M. Ajayan,
A. M. Dattelbaum,
H. Htoon,
A. J. Taylor,
R. P. Prasankumar
Abstract:
Graphene, a monolayer of carbon atoms arranged in a hexagonal pattern, provides a unique two-dimensional (2D) system exhibiting exotic phenomena such as quantum Hall effects, massless Dirac quasiparticle excitations and universal absorption & conductivity. The linear energy-momentum dispersion relation in graphene also offers the opportunity to mimic the physics of far-away relativistic particles…
▽ More
Graphene, a monolayer of carbon atoms arranged in a hexagonal pattern, provides a unique two-dimensional (2D) system exhibiting exotic phenomena such as quantum Hall effects, massless Dirac quasiparticle excitations and universal absorption & conductivity. The linear energy-momentum dispersion relation in graphene also offers the opportunity to mimic the physics of far-away relativistic particles like neutron stars and white dwarfs. In this letter, we perform a counterintuitive ultrafast pump-probe experiment with high photon energies to isolate the Drude-like intraband dynamics of photoexcited carriers. We directly demonstrate the relativistic nature of the photoexcited Dirac quasiparticles by observing a nonlinear scaling of the response with the density of photoexcited carriers. This is in striking contrast to the linear scaling that is usually observed in conventional materials. Our results also indicate strong electron-phonon coupling in graphene, leading to a sub-100 femtosecond thermalization between high energy photoexcited carriers and optical phonons.
△ Less
Submitted 20 October, 2010; v1 submitted 7 September, 2010;
originally announced September 2010.
