Showing 1–50 of 92 results for author: Fevre, P L

Two-dimensional to bulk crossover of the WSe$_2$ electronic band structure

Authors: Patrick Le Fèvre, Raphaël Salazar, Matthieu Jamet, François Bertran, Chiara Bigi, Abdelkarim Ourghi, Céline Vergnaud, Aki Pulkkinen, Jan Minar, Thomas Jaouen, Julien Rault

Abstract: Transition Metal Dichalcogenides (TMD) are layered materials obtained by stacking two-dimensional sheets weakly bonded by van der Waals interactions. In bulk TMD, band dispersions are observed in the direction normal to the sheet plane (z-direction) due to the hybridization of out-of-plane orbitals but no kz-dispersion is expected at the single-layer limit. Using angle-resolved photoemission spect… ▽ More Transition Metal Dichalcogenides (TMD) are layered materials obtained by stacking two-dimensional sheets weakly bonded by van der Waals interactions. In bulk TMD, band dispersions are observed in the direction normal to the sheet plane (z-direction) due to the hybridization of out-of-plane orbitals but no kz-dispersion is expected at the single-layer limit. Using angle-resolved photoemission spectroscopy, we precisely address the two-dimensional to three-dimensional crossover of the electronic band structure of epitaxial WSe$_2$ thin films. Increasing number of discrete electronic states appears in given kz-ranges while increasing the number of layers. The continuous bulk dispersion is nearly retrieved for 6-sheet films. These results are reproduced by calculations going from a relatively simple tight-binding model to a sophisticated KKR-Green's function calculation. This two-dimensional system is hence used as a benchmark to compare different theoretical approaches. △ Less

Submitted 4 July, 2024; originally announced July 2024.

Van der Waals epitaxy of Weyl-semimetal Td-WTe$_2$

Authors: Alexandre Llopez, Frédéric Leroy, Calvin Tagne-Kaegom, Boris Croes, Adrien Michon, Chiara Mastropasqua, Mohamed Al Khalfioui, Stefano Curiotto, Pierre Müller, Andrés Saùl, Bertrand Kierren, Geoffroy Kremer, Patrick Le Fèvre, François Bertran, Yannick Fagot-Revurat, Fabien Cheynis

Abstract: Epitaxial growth of WTe$_2$ offers significant advantages, including the production of high-qualityfilms, possible long range in-plane ordering and precise control over layer thicknesses. However,the mean island size of WTe$_2$ grown by molecular beam epitaxy (MBE) in litterature is only a fewtens of nanometers, which is not suitable for an implementation of devices at large lateral scales.Here we… ▽ More Epitaxial growth of WTe$_2$ offers significant advantages, including the production of high-qualityfilms, possible long range in-plane ordering and precise control over layer thicknesses. However,the mean island size of WTe$_2$ grown by molecular beam epitaxy (MBE) in litterature is only a fewtens of nanometers, which is not suitable for an implementation of devices at large lateral scales.Here we report the growth of Td-WTe$_2$ ultrathin films by MBE on monolayer (ML) graphenereaching a mean flake size of $\cong$110nm, which is, on overage, more than three time larger thanprevious results. WTe$_2$ films thicker than 5nm have been successfully synthesized and exhibit theexpected Td-phase atomic structure. We rationalize epitaxial growth of Td-WTe$_2$ and propose asimple model to estimate the mean flake size as a function of growth parameters that can be appliedto other transition metal dichalcogenides (TMDCs). Based on nucleation theory and Kolmogorov-Johnson-Meh-Avrami (KJMA) equation, our analytical model supports experimental data showinga critical coverage of 0.13ML above which WTe$_2$ nucleation becomes negligible. The quality ofmonolayer WTe$_2$ films is demonstrated from electronic band structure analysis using angle-resolved photoemission spectroscopy (ARPES) in agreement with first-principle calculationsperformed on free-standing WTe$_2$ and previous reports. △ Less

Submitted 15 April, 2024; originally announced April 2024.

Comments: ACS Applied Materials and Interfaces, 2024

Weak Electronic Correlations Observed in Magnetic Weyl Semimetal Mn$_3$Ge

Authors: Susmita Changdar, Susanta Ghosh, Anumita Bose, Indrani Kar, Achintya Low, Patrick Le Fevre, François Bertran, Awadhesh Narayan, Setti Thirupathaiah

Abstract: Using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations, we systematically studied the electronic band structure of Mn$_3$Ge in the vicinity of the Fermi level. We observe several bands crossing the Fermi level, confirming the metallic nature of the studied system. We further observe several flat bands along various high symmetry directions, consist… ▽ More Using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations, we systematically studied the electronic band structure of Mn$_3$Ge in the vicinity of the Fermi level. We observe several bands crossing the Fermi level, confirming the metallic nature of the studied system. We further observe several flat bands along various high symmetry directions, consistent with the DFT calculations. The calculated partial density of states (PDOS) suggests a dominant Mn $3d$ orbital contribution to the total valence band DOS. With the help of orbital-resolved band structure calculations, we qualitatively identify the orbital information of the experimentally obtained band dispersions. Out-of-plane electronic band dispersions are explored by measuring the ARPES data at various photon energies. Importantly, our study suggests relatively weaker electronic correlations in Mn$_3$Ge compared to Mn$_3$Sn. △ Less

Submitted 1 December, 2023; originally announced December 2023.

Comments: 11 pages, 3 figures. To appear in the Journal of Physics: Condensed Matter

Electronic bandstructure of superconducting KTaO3 (111) interfaces

Authors: Srijani Mallik, Börge Göbel, Hugo Witt, Luis M. Vicente-Arche, Sara Varotto, Julien Bréhin, Gerbold Ménard, Guilhem Saïz, Dyhia Tamsaout, Andrés Felipe Santander-Syro, Franck Fortuna, François Bertran, Patrick Le Fèvre, Julien Rault, Isabella Boventer, Ingrid Mertig, Agnès Barthélémy, Nicolas Bergeal, Annika Johansson, Manuel Bibes

Abstract: Two-dimensional electron gases(2DEGs)based on KTaO3 are emerging as a promising platform for spin-orbitronics due to their high Rashba spin-orbit coupling (SOC) and gate-voltage tunability. The recent discovery of a superconducting state in KTaO3 2DEGs now expands their potential towards topological superconductivity. Although the band structure of KTaO3 surfaces of various crystallographic orient… ▽ More Two-dimensional electron gases(2DEGs)based on KTaO3 are emerging as a promising platform for spin-orbitronics due to their high Rashba spin-orbit coupling (SOC) and gate-voltage tunability. The recent discovery of a superconducting state in KTaO3 2DEGs now expands their potential towards topological superconductivity. Although the band structure of KTaO3 surfaces of various crystallographic orientations has already been mapped using angle-resolved photoemission spectroscopy(ARPES), this is not the case for superconducting KTaO3 2DEGs. Here, we reveal the electronic structure of superconducting 2DEGs based on KTaO3 (111) single crystals through ARPES measurements. We fit the data with a tight-binding model and compute the associated spin textures to bring insight into the SOC-driven physics of this fascinating system. △ Less

Submitted 14 November, 2023; originally announced November 2023.

Comments: 9 pages, 4 figures

Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe2 on GaP(111) Heterostructure

Authors: Aymen Mahmoudi, Meryem Bouaziz, Niels Chapuis, Geoffroy Kremer, Julien Chaste, Davide Romanin, Marco Pala, François Bertran, Patrick Le Fèvre, Iann C. Gerber, Gilles Patriarche, Fabrice Oehler, Xavier Wallart, Abdelkarim Ouerghi

Abstract: The growth of bilayers of two-dimensional (2D) materials on conventional 3D semiconductors results in 2D/3D hybrid heterostructures, which can provide additional advantages over more established 3D semiconductors while retaining some specificities of 2D materials. Understanding and exploiting these phenomena hinge on knowing the electronic properties and the hybridization of these structures. Here… ▽ More The growth of bilayers of two-dimensional (2D) materials on conventional 3D semiconductors results in 2D/3D hybrid heterostructures, which can provide additional advantages over more established 3D semiconductors while retaining some specificities of 2D materials. Understanding and exploiting these phenomena hinge on knowing the electronic properties and the hybridization of these structures. Here, we demonstrate that rhombohedral-stacked bilayer (AB stacking) can be obtained by molecular beam epitaxy growth of tungsten diselenide (WSe2) on gallium phosphide (GaP) substrate. We confirm the presence of 3R-stacking of the WSe2 bilayer structure using scanning transmission electron microscopy (STEM) and micro-Raman spectroscopy. Also, we report high-resolution angle-resolved photoemission spectroscopy (ARPES) on our rhombohedral-stacked WSe2 bilayer grown on GaP(111)B substrate. Our ARPES measurements confirm the expected valence band structure of WSe2 with the band maximum located at the gamma point of the Brillouin zone. The epitaxial growth of WSe2 on GaP(111)B heterostructures paves the way for further studies of the fundamental properties of these complex materials, as well as prospects for their implementation in devices to exploit their promising electronic and optical properties. △ Less

Submitted 9 October, 2023; originally announced October 2023.

Comments: 5 figures

Electronic structure evolution of the magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$ with hole and electron doping

Authors: Himanshu Lohani, Paul Foulquier, Patrick Le Fevre, Francois Bertran, Dorothee Colson, Anne Forget, Veronique Brouet

Abstract: Co$_3$Sn$_2$S$_2$ has been established as a prototype of magnetic Weyl semimetal, exhibiting a ''giant'' anomalous Hall effect in its ferromagnetic phase. An attractive feature of this material is that Weyl points lie close to Fermi level, so that one can expect a high reactivity of the topological properties to hole or electron doping. We present here a direct observation with Angle Resolved Phot… ▽ More Co$_3$Sn$_2$S$_2$ has been established as a prototype of magnetic Weyl semimetal, exhibiting a ''giant'' anomalous Hall effect in its ferromagnetic phase. An attractive feature of this material is that Weyl points lie close to Fermi level, so that one can expect a high reactivity of the topological properties to hole or electron doping. We present here a direct observation with Angle Resolved Photoemission Spectroscopy of the evolution of the electronic structure under different types of substitutions : In for Sn (hole doping outside the kagome Co plane), Fe for Co (hole doping inside the kagome Co plane) and Ni for Co (electron doping inside the kagome Co plane). We observe clear shifts of selected bands, which are due both to doping and to the reduction of the magnetic splitting by doping. We discriminate between the two by studying the temperature evolution from ferromagnetic to paramagnetic state. We discuss these shifts with the help of DFT calculations using the Virtual Crystal Approximation. We find that these calculations reproduce rather well the evolution with In, but largely fail to capture the effect of Fe and Ni, where local behavior at the impurity site plays an important role. △ Less

Submitted 4 October, 2023; originally announced October 2023.

Journal ref: Physical Review B 107, 245119 (2023)

Intrinsic defects and mid-gap states in quasi-one-dimensional Indium Telluride

Authors: Meryem Bouaziz, Aymen Mahmoudi, Geoffroy Kremer, Julien Chaste, Cesar Gonzalez, Yannick J. Dappe, Francois Bertran, Patrick Le Fevre, Marco Pala, Fabrice Oehler, Jean-Christophe Girard, Abdelkarim Ouerghi

Abstract: Recently, intriguing physical properties have been unraveled in anisotropic semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry. The atomic chain is the ultimate limit in material downscaling for electronics, a frontier for establishing an entirely new field of one-dimensional quantum materials. Electronic and structura… ▽ More Recently, intriguing physical properties have been unraveled in anisotropic semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry. The atomic chain is the ultimate limit in material downscaling for electronics, a frontier for establishing an entirely new field of one-dimensional quantum materials. Electronic and structural properties of chain-like InTe are essential for better understanding of device applications such as thermoelectrics. Here, we use scanning tunneling microscopy/spectroscopy (STM/STS) measurements and density functional theory (DFT) calculations to directly image the in-plane structural anisotropy in tetragonal Indium Telluride (InTe). As results, we report the direct observation of one-dimensional In1+ chains in InTe. We demonstrate that InTe exhibits a band gap of about 0.40 +-0.02 eV located at the M point of the Brillouin zone. Additionally, line defects are observed in our sample, were attributed to In1+ chain vacancy along the c-axis, a general feature in many other TlSe-like compounds. Our STS and DFT results prove that the presence of In1+ induces localized gap state, located near the valence band maximum (VBM). This acceptor state is responsible for the high intrinsic p-type doping of InTe that we also confirm using angle-resolved photoemission spectroscopy. △ Less

Submitted 17 August, 2023; originally announced August 2023.

Comments: no

Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In$_{2}$Se$_{3}$

Authors: Geoffroy Kremer, Aymen Mahmoudi, Adel M'Foukh, Meryem Bouaziz, Mehrdad Rahimi, Maria Luisa Della Rocca, Patrick Le Fèvre, Jean-Francois Dayen, François Bertran, Sylvia Matzen, Marco Pala, Julien Chaste, Fabrice Oehler, Abdelkarim Ouerghi

Abstract: Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories, due to their low energy consumption and high endurance. Among them, α-In$_{2}$Se$_{3}$ has drawn particular attention due to its in- and out-of-plane ferroelectricity, whose robustness has been demonstrated down to the monolayer limit. This is a relatively uncommon behavior since mos… ▽ More Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories, due to their low energy consumption and high endurance. Among them, α-In$_{2}$Se$_{3}$ has drawn particular attention due to its in- and out-of-plane ferroelectricity, whose robustness has been demonstrated down to the monolayer limit. This is a relatively uncommon behavior since most bulk FE materials lose their ferroelectric character at the 2D limit due to depolarization field. Using angle resolved photoemission spectroscopy (ARPES), we unveil another unusual 2D phenomena appearing in 2H α-In$_{2}$Se$_{3}$ single crystals, the occurrence of a highly metallic two-dimensional electron gas (2DEG) at the surface of vacuum-cleaved crystals. This 2DEG exhibits two confined states which correspond to an electron density of approximatively 10$^{13}$ electrons/cm$^{3}$, also confirmed by thermoelectric measurements. Combination of ARPES and density functional theory (DFT) calculations reveals a direct band gap of energy equal to 1.3 +/- 0.1 eV, with the bottom of the conduction band localized at the center of the Brillouin zone, just below the Fermi level. Such strong n-type doping further supports the quantum confinement of electrons and the formation of the 2DEG. △ Less

Submitted 9 August, 2023; originally announced August 2023.

Comments: 20 pages, 12 figures

Experimental observation of metallic states with different dimensionality in a quasi-1D charge density wave compound

Authors: P. Rezende-Gonçalves, M. Thees, J. Rojas Castillo, D. Silvera-Vega, R. L. Bouwmeester, E. David, A. Antezak, A. J. Thakur, F. Fortuna, P. Le Fèvre, M. Rosmus, N. Olszowska, R. Magalhães-Paniago, A. C. Garcia-Castro, P. Giraldo-Gallo, E. Frantzeskakis, A. F. Santander-Syro

Abstract: TaTe$_4$ is a quasi-1D tetrachalcogenide that exhibits a CDW instability caused by a periodic lattice distortion. Recently, pressure-induced superconductivity has been achieved in this compound, revealing a competition between these different ground states and making TaTe$_4$ very interesting for fundamental studies. Although TaTe$_4$ exhibits CDW ordering below 475 K, transport experiments have r… ▽ More TaTe$_4$ is a quasi-1D tetrachalcogenide that exhibits a CDW instability caused by a periodic lattice distortion. Recently, pressure-induced superconductivity has been achieved in this compound, revealing a competition between these different ground states and making TaTe$_4$ very interesting for fundamental studies. Although TaTe$_4$ exhibits CDW ordering below 475 K, transport experiments have reported metallic behavior with a resistivity plateau at temperatures lower than 10 K. In this paper, we study the electronic structure of TaTe$_4$ using a combination of high-resolution angle-resolved photoemission spectroscopy and density functional calculations. Our results reveal the existence of the long-sought metallic states. These states exhibit mixed dimensionality, while some of them might have potential topological properties. △ Less

Submitted 28 April, 2023; originally announced May 2023.

Comments: 8 pages, 4 figures

Protection of Ising spin-orbit coupling in bulk misfit superconductors

Authors: Tomas Samuely, Darshana Wickramaratne, Martin Gmitra, Thomas Jaouen, Ondrej Šofranko, Dominik Volavka, Marek Kuzmiak, Jozef Haniš, Pavol Szabó, Claude Monney, Geoffroy Kremer, Patrick Le Fèvre, François Bertran, Tristan Cren, Shunsuke Sasaki, Laurent Cario, Matteo Calandra, Igor I. Mazin, Peter Samuely

Abstract: Low-dimensional materials have remarkable properties that are distinct from their bulk counterparts. A paradigmatic example is Ising superconductivity that occurs in monolayer materials such as NbSe2 which show a strong violation of the Pauli limit. In monolayers, this occurs due to a combination of broken inversion symmetry and spin-orbit coupling that locks the spins of the electrons out-of-plan… ▽ More Low-dimensional materials have remarkable properties that are distinct from their bulk counterparts. A paradigmatic example is Ising superconductivity that occurs in monolayer materials such as NbSe2 which show a strong violation of the Pauli limit. In monolayers, this occurs due to a combination of broken inversion symmetry and spin-orbit coupling that locks the spins of the electrons out-of-plane. Bulk NbSe2 is centrosymmetric and is therefore not an Ising superconductor. We show that bulk misfit compound superconductors, (LaSe)1.14(NbSe2) and (LaSe)1.14(NbSe2)2, comprised of monolayers and bilayers of NbSe2, exhibit unexpected Ising protection with a Pauli-limit violation comparable to monolayer NbSe2, despite formally having inversion symmetry. We study these misfit compounds using complementary experimental methods in combination with first-principles calculations. We propose theoretical mechanisms of how the Ising protection can survive in bulk materials. We show how some of these mechanisms operate in these bulk compounds due to a concerted effect of charge-transfer, defects, reduction of interlayer hopping, and stacking. This highlights how Ising superconductivity can, unexpectedly, arise in bulk materials, and possibly enable the design of bulk superconductors that are resilient to magnetic fields. △ Less

Submitted 6 April, 2023; originally announced April 2023.

Comments: 14 pages, 4 figures, 4 extended data items

Spin-momentum locking and ultrafast spin-charge conversion in ultrathin epitaxial Bi$_{1-x}$Sb$_x$ topological insulator

Authors: E. Rongione, L. Baringthon, D. She, G. Patriarche, R. Lebrun, A. Lemaitre, M. Morassi, N. Reyren, M. Micica, J. Mangeney, J. Tignon, F. Bertran, S. Dhillon, P. Le Fevre, H. Jaffres, J. -M. George

Abstract: The helicity of 3D topological insulator surface states has drawn significant attention in spintronics owing to spin-momentum locking where the carriers' spin is oriented perpendicular to their momentum. This property can provide an efficient method to convert charge currents into spin currents, and vice-versa, through the Rashba-Edelstein effect. However, experimental signatures of these surface… ▽ More The helicity of 3D topological insulator surface states has drawn significant attention in spintronics owing to spin-momentum locking where the carriers' spin is oriented perpendicular to their momentum. This property can provide an efficient method to convert charge currents into spin currents, and vice-versa, through the Rashba-Edelstein effect. However, experimental signatures of these surface states to the spin-charge conversion are extremely difficult to disentangle from bulk state contributions. Here, we combine spin- and angle-resolved photo-emission spectroscopy, and time-resolved THz emission spectroscopy to categorically demonstrate that spin-charge conversion arises mainly from the surface state in Bi$_{1-x}$Sb$_x$ ultrathin films, down to few nanometers where confinement effects emerge. We correlate this large conversion efficiency, typically at the level of the bulk spin Hall effect from heavy metals, to the complex Fermi surface obtained from theoretical calculations of the inverse Rashba-Edelstein response. %We demonstrate this for film thickness down to a few nanometers, Both surface state robustness and sizeable conversion efficiency in epitaxial Bi$_{1-x}$Sb$_x$ thin films bring new perspectives for ultra-low power magnetic random-access memories and broadband THz generation. △ Less

Submitted 25 March, 2023; originally announced March 2023.

Comments: 23 pages, 3 figures

Evolution of the spectral lineshape at the magnetic transition in Sr2IrO4 and Sr3Ir2O7

Authors: Paul Foulquier, Marcello Civelli, Marcelo Rozenberg, Alberto Camjayi, Joel Bobadilla, Dorothee Colson, Anne Forget, Pierre Thuery, Francois Bertran, Patrick Le Fevre, Veronique Brouet

Abstract: Sr2IrO4 and Sr3Ir2O7 form two families of spin-orbit Mott insulators with quite different charge gaps and an antiferromagnetic (AF) ground state. This offers a unique opportunity to study the impact of long-range magnetic order in Mott insulators. It appears to play a different role in the two families, as there is almost no change of the resistivity at the magnetic transition TN in Sr2IrO4 and a… ▽ More Sr2IrO4 and Sr3Ir2O7 form two families of spin-orbit Mott insulators with quite different charge gaps and an antiferromagnetic (AF) ground state. This offers a unique opportunity to study the impact of long-range magnetic order in Mott insulators. It appears to play a different role in the two families, as there is almost no change of the resistivity at the magnetic transition TN in Sr2IrO4 and a large one in Sr3Ir2O7. We use angle-resolved photoemission to study the evolution of the spectral lineshape through the magnetic transition. We use Ru and La substitutions to tune TN and discriminate changes due to temperature from those due to magnetic order. We evidence a shift and a transfer of spectral weight in the gap at TN in Sr3Ir2O7, which is absent in Sr2IrO4. We assign this behavior to a significantly larger coherent contribution to the spectral lineshape in Sr3Ir2O7, which evolves strongly at TN. On the contrary, the Sr2IrO4 lineshape is dominated by the incoherent part, which is insensitive to TN. We compare these findings to theoretical expections of the Slater vs Mott antiferromagnetism within Dynamical Mean Field Theory. △ Less

Submitted 13 January, 2023; originally announced January 2023.

Visualizing giant ferroelectric gating effects in large-scale WSe$_2$/BiFeO$_3$ heterostructures

Authors: Raphaël Salazar, Sara Varotto, Céline Vergnaud, Vincent Garcia, Stéphane Fusil, Julien Chaste, Thomas Maroutian, Alain Marty, Frédéric Bonell, Debora Pierucci, Abdelkarim Ouerghi, François Bertran, Patrick Le Fèvre, Matthieu Jamet, Manuel Bibes, Julien Rault

Abstract: Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc) have enabled the design of devices that could revolutionize microelectronics and optoelectronics. However, heterostructures incorporating quantum materials from different families remain scarce, while they would immensely broaden the range of possible applications. Here we demonst… ▽ More Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc) have enabled the design of devices that could revolutionize microelectronics and optoelectronics. However, heterostructures incorporating quantum materials from different families remain scarce, while they would immensely broaden the range of possible applications. Here we demonstrate the large-scale integration of compounds from two highly-multifunctional families: perovskite oxides and transition-metal dichalcogenides (TMDs). We couple BiFeO$_3$, a room-temperature multiferroic oxide, and WSe$_2$, a semiconducting two-dimensional material with potential for photovoltaics and photonics. WSe$_2$ is grown by molecular beam epitaxy and transferred on a centimeter-scale onto BiFeO$_3$ films. Using angle-resolved photoemission spectroscopy, we visualize the electronic structure of 1 to 3 monolayers of WSe$_2$ and evidence a giant energy shift as large as 0.75 eV induced by the ferroelectric polarization direction in the underlying BiFeO$_3$. Such a strong shift opens new perspectives in the efficient manipulation of TMDs properties by proximity effects. △ Less

Submitted 26 October, 2022; originally announced October 2022.

Direct visualization of Rashba-split bands and spin/orbital-charge interconversion at KTaO$_3$ interfaces

Authors: Sara Varotto, Annika Johansson, Börge Göbel, Luis M. Vicente-Arche, Srijani Mallik, Julien Bréhin, Raphaël Salazar, François Bertran, Patrick Le Fèvre, Nicolas Bergeal, Julien Rault, Ingrid Mertig, Manuel Bibes

Abstract: Rashba interfaces have emerged as promising platforms for spin-charge interconversion through the direct and inverse Edelstein effects. Notably, oxide-based two-dimensional electron gases (2DEGs) display a large and gate-tunable conversion efficiency, as determined by transport measurements. However, a direct visualization of the Rashba-split bands in oxide 2DEGs is lacking, which hampers an advan… ▽ More Rashba interfaces have emerged as promising platforms for spin-charge interconversion through the direct and inverse Edelstein effects. Notably, oxide-based two-dimensional electron gases (2DEGs) display a large and gate-tunable conversion efficiency, as determined by transport measurements. However, a direct visualization of the Rashba-split bands in oxide 2DEGs is lacking, which hampers an advanced understanding of their rich spin-orbit physics. Here, we investigate KTaO$_3$-2DEGs and evidence their Rashba-split bands using angle resolved photoemission spectroscopy. Fitting the bands with a tight-binding Hamiltonian, we extract the effective Rashba coefficient and bring insight into the complex multiorbital nature of the band structure. Our calculations reveal unconventional spin and orbital textures, showing compensation effects from quasi-degenerate band pairs which strongly depend on in-plane anisotropy. We compute the band-resolved spin and orbital Edelstein effects, and predict interconversion efficiencies exceeding those of other oxide 2DEGs. Finally, we suggest design rules for Rashba systems to optimize spin-charge interconversion performance. △ Less

Submitted 18 July, 2022; originally announced July 2022.

Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V$_2$O$_3$

Authors: Maximilian Thees, Min-Han Lee, Rosa Luca Bouwmeester, Pedro H. Rezende-Gonçalves, Emma David, Alexandre Zimmers, Emmanouil Frantzeskakis, Nicolas M. Vargas, Yoav Kalcheim, Patrick Le Fèvre, Koji Horiba, Hiroshi Kumigashira, Silke Biermann, Juan Trastoy, Marcelo J. Rozenberg, Ivan K. Schuller, Andrés F. Santander-Syro

Abstract: In solids, strong repulsion between electrons can inhibit their movement and result in a "Mott" metal-to-insulator transition (MIT), a fundamental phenomenon whose understanding has remained a challenge for over 50 years. A key issue is how the wave-like itinerant electrons change into a localized-like state due to increased interactions. However, observing the MIT in terms of the energy- and mome… ▽ More In solids, strong repulsion between electrons can inhibit their movement and result in a "Mott" metal-to-insulator transition (MIT), a fundamental phenomenon whose understanding has remained a challenge for over 50 years. A key issue is how the wave-like itinerant electrons change into a localized-like state due to increased interactions. However, observing the MIT in terms of the energy- and momentum-resolved electronic structure of the system, the only direct way to probe both itinerant and localized states, has been elusive. Here we show, using angle-resolved photoemission spectroscopy (ARPES), that in V$_2$O$_3$ the temperature-induced MIT is characterized by the progressive disappearance of its itinerant conduction band, without any change in its energy-momentum dispersion, and the simultaneous shift to larger binding energies of a quasi-localized state initially located near the Fermi level. △ Less

Submitted 9 July, 2022; originally announced July 2022.

Comments: Main Text (4 figures) and Supplementary Information (12 figures)

Journal ref: Science Advances 7(45), eabj1164 (2021)

Rashba-like spin textures in Graphene promoted by ferromagnet-mediated Electronic-Hybridization with heavy metal

Authors: Beatriz Muñiz Cano, Adrían Gudín, Jaime Sánchez-Barriga, Oliver J. Clark, Alberto Anadón, Jose Manuel Díez, Pablo Olleros-Rodríguez, Fernando Ajejas, Iciar Arnay, Matteo Jugovac, Julien Rault, Patrick Le Févre, François Bertran, Donya Mazhjoo, Gustav Bihlmayer, Stefan Blügel, Rodolfo Miranda, Julio Camarero, Miguel Angel Valbuena, Paolo Perna

Abstract: Epitaxial graphene/ferromagnetic metal (Gr/FM) heterostructures deposited onto heavy metals (HM) have been proposed for the realization of novel spintronic devices because of their perpendicular magnetic anisotropy and sizeable Dzyaloshinskii-Moriya interaction (DMI), allowing for both enhanced thermal stability and stabilization of chiral spin textures. However, establishing routes towards this g… ▽ More Epitaxial graphene/ferromagnetic metal (Gr/FM) heterostructures deposited onto heavy metals (HM) have been proposed for the realization of novel spintronic devices because of their perpendicular magnetic anisotropy and sizeable Dzyaloshinskii-Moriya interaction (DMI), allowing for both enhanced thermal stability and stabilization of chiral spin textures. However, establishing routes towards this goal requires the fundamental understanding of the microscopic origin of their unusual properties. Here, we elucidate the nature of the induced spin-orbit coupling (SOC) at Gr/Co interfaces on Ir. Through spin- and angle-resolved photoemission along with density functional theory, we show that the interaction of the HM with the C atomic layer via hybridization with the FM is the source of strong SOC in the Gr layer. Furthermore, our studies on ultrathin Co films underneath Gr reveal an energy splitting of $\sim$\,100 meV (negligible) for in-plane (out-of-plane) spin polarized Gr $π$ bands, consistent with a Rashba-SOC at the Gr/Co interface, which is either the fingerprint or the origin of the DMI. This mechanism vanishes at large Co thicknesses, where neither in-plane nor out-of-plane spin-orbit splitting is observed, indicating that Gr $π$ states are electronically decoupled from the HM. The present findings are important for future applications of Gr-based heterostructures in spintronic devices. △ Less

Submitted 1 May, 2023; v1 submitted 9 June, 2022; originally announced June 2022.

Comments: 11 pages, 7 figures

Breakdown of bulk-projected isotropy in surface electronic states of topological Kondo insulator SmB$_6$(001)

Authors: Yoshiyuki Ohtsubo, Toru Nakaya, Takuto Nakamura, Patrick Le Fèvre, François Bertran, Fumitoshi Iga, Shin-Ichi Kimura

Abstract: The topology and spin-orbital polarization of two-dimensional (2D) surface electronic states have been extensively studied in this decade. One major interest in them is their close relationship with the parities of the bulk (3D) electronic states. In this context, the surface is often regarded as a simple truncation of the bulk crystal. Here we show breakdown of the bulk-related in-plane rotation… ▽ More The topology and spin-orbital polarization of two-dimensional (2D) surface electronic states have been extensively studied in this decade. One major interest in them is their close relationship with the parities of the bulk (3D) electronic states. In this context, the surface is often regarded as a simple truncation of the bulk crystal. Here we show breakdown of the bulk-related in-plane rotation symmetry in the topological surface states (TSSs) of the Kondo insulator SmB$_6$. Angle-resolved photoelectron spectroscopy (ARPES) performed on the vicinal SmB$_6$(001)-$p$(2$\times$2) surface showed that TSSs are anisotropic and that the Fermi contour lacks the fourfold rotation symmetry maintained in the bulk. This result emphasizes the important role of the surface atomic structure even in TSSs. Moreover, it suggests that the engineering of surface atomic structure could provide a new pathway to tailor various properties among TSSs, such as anisotropic surface conductivity, nesting of surface Fermi contours, or the number and position of van Hove singularities in 2D reciprocal space. △ Less

Submitted 21 August, 2022; v1 submitted 12 February, 2022; originally announced February 2022.

Comments: 24 pages 7 figures (4 for main text, 3 for supplementary information) and 1 supplementary table

Journal ref: Nature Communications 13 (2022) 5600

CDW signatures in the electronic structure of LaSb2 at 13 K and metal-insulator transition

Authors: I. Palacio, J. Obando-Guevara, L. Chen, M. N. Nair, M. A. González Barrio, E. Papalazarou, P. Le Fèvre, R. F. Luccas, H. Suderow, P. Canfield, A. Taleb-Ibrahimi, E. G. Michel, A. Mascaraque, A. Tejeda

Abstract: Light rare-earth antimonide LaSb2 is a material susceptible to nesting and exhibits a Charge Density Wave (CDW) at 355 K as well as superconductivity below 1.2 K. In the seek for additional CDW transitions, we have studied the temperature-dependent of LaSb2 at 200 and 13 K and infer CDW manifestations by combining angle-resolved photoemission spectroscopy (ARPES) measurements and density functiona… ▽ More Light rare-earth antimonide LaSb2 is a material susceptible to nesting and exhibits a Charge Density Wave (CDW) at 355 K as well as superconductivity below 1.2 K. In the seek for additional CDW transitions, we have studied the temperature-dependent of LaSb2 at 200 and 13 K and infer CDW manifestations by combining angle-resolved photoemission spectroscopy (ARPES) measurements and density functional theory (DFT) calculations. ARPES measurements at 200 K show a metallic system while it appears to be semiconducting at 13 K, at odds with existing resistivity measurements. At 13 K, ARPES shows the band folding of the inner Fermi surface pockets, with considerable spectral weight on the folded band. We find a nesting vector at q = 0.25$\pm$0.02 Å -1. In addition, we observe Umklapps of other bands due to the onset of the new periodicity, together with a semiconducting behavior in the whole reciprocal space. Calculations demonstrate that the folded band is associated with the La-Sb layer and that in-plane distortion is the most probable structural modification in the system, probably affecting the whole unit cell. △ Less

Submitted 9 March, 2022; v1 submitted 7 February, 2022; originally announced February 2022.

Comments: In this work, the discussion presents two interpretations to explain the experimental results. We withdraw this work because after further discussions and data analysis we have concluded that only one of the two interpretations is consistent with the experimental results

Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases

Authors: Luis M. Vicente-Arche, Julien Bréhin, Sara Varotto, Maxen Cosset-Cheneau, Srijani Mallik, Raphaël Salazar, Paul Noël, Diogo Castro Vaz, Felix Trier, Suvam Bhattacharya, Anke Sander, Patrick Le Fèvre, François Bertran, Guilhem Saiz, Gerbold Ménard, Nicolas Bergeal, Agnès Barthélémy, Hai Li, Chia-Ching Lin, Dmitri E. Nikonov, Ian A. Young, Julien Rault, Laurent Vila, Jean-Philippe Attané, Manuel Bibes

Abstract: Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE an… ▽ More Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE and IEE have been investigated in interfaces based on the perovskite SrTiO$_3$ (STO), albeit in separate studies focusing on one or the other. The demonstration of these effects remains mostly elusive in other oxide interface systems despite their blossoming in the last decade. Here, we report the observation of both the DEE and IEE in a new interfacial two-dimensional electron gas (2DEG) based on the perovskite oxide KTaO$_3$. We generate 2DEGs by the simple deposition of Al metal onto KTaO$_3$ single crystals, characterize them by angle-resolved photoemission spectroscopy and magnetotransport, and demonstrate the DEE through unidirectional magnetoresistance and the IEE by spin-pumping experiments. We compare the spin-charge interconversion efficiency with that of STO-based interfaces, relate it to the 2DEG electronic structure, and give perspectives for the implementation of KTaO$_3$ 2DEGs into spin-orbitronic devices. △ Less

Submitted 17 August, 2021; originally announced August 2021.

Journal ref: Adv. Mater. 202102102 (2021)

Experimental observation and spin texture of Dirac node arcs in tetradymite topological metals

Authors: J. Dai, E. Frantzeskakis, N. Aryal, K. -W. Chen, F. Fortuna, J. E. Rault, P. Le Fèvre, L. Balicas, K. Miyamoto, T. Okuda, E. Manousakis, R. E. Baumbach, A. F. Santander-Syro

Abstract: We report the observation of a non-trivial spin texture in Dirac node arcs, novel topological objects formed when Dirac cones of massless particles extend along an open one-dimensional line in momentum space. We find that such states are present in all the compounds of the tetradymite M$_2$Te$_2$X family (M$=$Ti, Zr or Hf and X$=$P or As), regardless of the weak or strong character of the topologi… ▽ More We report the observation of a non-trivial spin texture in Dirac node arcs, novel topological objects formed when Dirac cones of massless particles extend along an open one-dimensional line in momentum space. We find that such states are present in all the compounds of the tetradymite M$_2$Te$_2$X family (M$=$Ti, Zr or Hf and X$=$P or As), regardless of the weak or strong character of the topological invariant. The Dirac node arcs in tetradymites are thus the simplest possible, textbook example, of a type-I Dirac system with a single spin-polarized node arc. △ Less

Submitted 16 May, 2021; originally announced May 2021.

Comments: Main Text + Supplementary Information, 12 pages, 11 figures

Journal ref: Phys. Rev. Lett. 126, 196407 (2021)

Origin of the different electronic structure of Rh- and Ru-doped Sr2IrO4

Authors: Véronique Brouet, Paul Foulquier, Alex Louat, François Bertran, Patrick Le Fèvre, Julien E. Rault, Dorothée Colson

Abstract: One way to induce insulator to metal transitions in the spin-orbit Mott insulator Sr2IrO4 is to substitute iridium with transition metals (Ru, Rh). However, this creates intriguing inhomogeneous metallic states, which cannot be described by a simple doping effect. We detail the electronic structure of the Ru-doped case with angle-resolved photoemission and show that, contrary to Rh, it cannot be c… ▽ More One way to induce insulator to metal transitions in the spin-orbit Mott insulator Sr2IrO4 is to substitute iridium with transition metals (Ru, Rh). However, this creates intriguing inhomogeneous metallic states, which cannot be described by a simple doping effect. We detail the electronic structure of the Ru-doped case with angle-resolved photoemission and show that, contrary to Rh, it cannot be connected to the undoped case by a rigid shift. We further identify bands below $E_F$ coexisting with the metallic ones that we assign to non-bonding Ir sites. We rationalize the differences between Rh and Ru by a different hybridization with oxygen, which mediates the coupling to Ir and sensitively affects the effective doping. We argue that the spin-orbit coupling does not control neither the charge transfer nor the transition threshold. △ Less

Submitted 4 March, 2021; originally announced March 2021.

Journal ref: Phys. Rev. B 104, 121104 (2021)

Universal Fabrication of Two-Dimensional Electron Systems in Functional Oxides

Authors: Tobias Chris Rödel, Franck Fortuna, Shamashis Sengupta, Emmanouil Frantzeskakis, Patrick Le Fèvre, François Bertran, Bernard Mercey, Sylvia Matzen, Guillaume Agnus, Thomas Maroutian, Philippe Lecoeur, Andrés Felipe~Santander-Syro

Abstract: Two-dimensional electron systems (2DESs) in functional oxides are promising for applications, but their fabrication and use, essentially limited to SrTiO$_3$-based heterostructures, are hampered by the need of growing complex oxide over-layers thicker than 2~nm using evolved techniques. This work shows that thermal deposition of a monolayer of an elementary reducing agent suffices to create 2DESs… ▽ More Two-dimensional electron systems (2DESs) in functional oxides are promising for applications, but their fabrication and use, essentially limited to SrTiO$_3$-based heterostructures, are hampered by the need of growing complex oxide over-layers thicker than 2~nm using evolved techniques. This work shows that thermal deposition of a monolayer of an elementary reducing agent suffices to create 2DESs in numerous oxides. △ Less

Submitted 15 February, 2021; originally announced February 2021.

Comments: Main Text + Supporting Information, 25 pages, 11 figures

Journal ref: Adv. Mater. 28, 1976-1980 (2016)

Dispersing and semi-flat bands in the wide band gap two-dimensional semiconductor bilayer silicon oxide

Authors: G. Kremer, J. C. Alvarez-Quiceno, T. Pierron, C. González, M. Sicot, B. Kierren, L. Moreau, J. E. Rault, P. Le Fèvre, F. Bertran, Y. J. Dappe, J. Coraux, P. Pochet, Y. Fagot-Revurat

Abstract: Epitaxial bilayer silicon oxide is a transferable two-dimensional material predicted to be a wide band gap semiconductor, with potential applications for deep UV optoelectronics, or as a building block of van der Waals heterostructures. The prerequisite to any sort of such applications is the knowledge of the electronic band structure, which we unveil using angle-resolved photoemission spectroscop… ▽ More Epitaxial bilayer silicon oxide is a transferable two-dimensional material predicted to be a wide band gap semiconductor, with potential applications for deep UV optoelectronics, or as a building block of van der Waals heterostructures. The prerequisite to any sort of such applications is the knowledge of the electronic band structure, which we unveil using angle-resolved photoemission spectroscopy and rationalise with the help of density functional theory calculations. We discover dispersing bands related to electronic delocalisation within the top and bottom planes of the material, with two linear crossings reminiscent of those predicted in bilayer AA-stacked graphene, and semi-flat bands stemming from the chemical bridges between the two planes. This band structure is robust against exposure to air, and can be controled by exposure to oxygen. We provide an experimental lower-estimate of the band gap size of 5 eV and predict a full gap of 7.36 eV using density functional theory calculations. △ Less

Submitted 6 May, 2021; v1 submitted 29 November, 2020; originally announced November 2020.

Journal ref: 2D Mater. 8 (2021) 035021

One-dimensionality of the spin-polarized surface conduction and valence bands of quasi-one-dimensional Bi chains on GaSb(110)-(2$\times$1)

Authors: Yoshiyuki Ohtsubo, Naoki Tokumasu, Hiroshi Watanabe, Takuto Nakamura, Patrick Le Fèvre, François Bertran, Masaki Imamura, Isamu Yamamoto, Junpei Azuma, Kazutoshi Takahashi, Shin-ichi Kimura

Abstract: Surface electronic structure and its one-dimensionality above and below the Fermi level ($E_{\rm F}$) were surveyed on the Bi/GaSb(110)-(2$\times$1) surface hosting quasi-one-dimensional (Q1D) Bi chains, using conventional (one-photon) and two-photon angle-resolved photoelectron spectroscopy (ARPES) and theoretical calculations. ARPES results reveal that the Q1D electronic states are within the pr… ▽ More Surface electronic structure and its one-dimensionality above and below the Fermi level ($E_{\rm F}$) were surveyed on the Bi/GaSb(110)-(2$\times$1) surface hosting quasi-one-dimensional (Q1D) Bi chains, using conventional (one-photon) and two-photon angle-resolved photoelectron spectroscopy (ARPES) and theoretical calculations. ARPES results reveal that the Q1D electronic states are within the projected bulk bandgap. Circular dichroism of two-photon ARPES and density-functional-theory calculation indicate clear spin and orbital polarization of the surface states consistent with the giant sizes of Rashba-type SOI, derived from the strong contribution of heavy Bi atoms. The surface conduction band above $E_{\rm F}$ forms a nearly straight constant-energy contour, suggesting its suitability for application in further studies of one-dimensional electronic systems with strong SOI. A tight-binding model calculation based on the obtained surface electronic structure successfully reproduces the surface band dispersions and predicts possible one- to two-dimensional crossover in the temperature range of 60--100~K. △ Less

Submitted 3 June, 2020; v1 submitted 17 February, 2020; originally announced February 2020.

Comments: 18 pages, 6 figures and 2 tables

Journal ref: Phys. Rev. B 101, 235306 (2020)

Tunable two-dimensional electron system at the (110) surface of SnO$_2$

Authors: J. Dai, E. Frantzeskakis, F. Fortuna, P. Lömker, R. Yukawa, M. Thees, S. Sengupta, P. Le Fèvre, F. Bertran, J. E. Rault, K. Horiba, M. Müller, H. Kumigashira, A. F. Santander-Syro

Abstract: We report the observation of a two-dimensional electron system (2DES) at the $(110)$ surface of the transparent bulk insulator SnO$_2$, and the tunability of its carrier density by means of temperature or Eu deposition. The 2DES is insensitive to surface reconstructions and, surprisingly, it survives even after exposure to ambient conditions --an extraordinary fact recalling the well known catalyt… ▽ More We report the observation of a two-dimensional electron system (2DES) at the $(110)$ surface of the transparent bulk insulator SnO$_2$, and the tunability of its carrier density by means of temperature or Eu deposition. The 2DES is insensitive to surface reconstructions and, surprisingly, it survives even after exposure to ambient conditions --an extraordinary fact recalling the well known catalytic properties SnO$_2$. Our data show that surface oxygen vacancies are at the origin of such 2DES, providing key information about the long-debated origin of $n$-type conductivity in SnO$_2$, at the basis of a wide range of applications. Furthermore, our study shows that the emergence of a 2DES in a given oxide depends on a delicate interplay between its crystal structure and the orbital character of its conduction band. △ Less

Submitted 16 February, 2020; originally announced February 2020.

Comments: 11 pages, 12 figures

Journal ref: Physical Review B 101, 085121 (2020)

Engineering Co$_2$MnAl$_x$Si$_{1-x}$ Heusler compounds as a model system to correlate spin polarization, intrinsic Gilbert damping and ultrafast demagnetization

Authors: C. Guillemard, W. Zhang, G. Malinowski, C. de Melo, J. Gorchon, S. Petit-Watelot, J. Ghanbaja, S. Mangin, P. Le Fèvre, F. Bertran, S. Andrieu

Abstract: Engineering of magnetic materials for developing better spintronic applications relies on the control of two key parameters: the spin polarization and the Gilbert damping responsible for the spin angular momentum dissipation. Both of them are expected to affect the ultrafast magnetization dynamics occurring on the femtosecond time scale. Here, we use engineered Co2MnAlxSi1-x Heusler compounds to a… ▽ More Engineering of magnetic materials for developing better spintronic applications relies on the control of two key parameters: the spin polarization and the Gilbert damping responsible for the spin angular momentum dissipation. Both of them are expected to affect the ultrafast magnetization dynamics occurring on the femtosecond time scale. Here, we use engineered Co2MnAlxSi1-x Heusler compounds to adjust the degree of spin polarization P from 60 to 100% and investigate how it correlates with the damping. We demonstrate experimentally that the damping decreases when increasing the spin polarization from 1.1 10-3 for Co2MnAl with 63% spin polarization to an ultra-low value of 4.10-4 for the half-metal magnet Co2MnSi. This allows us investigating the relation between these two parameters and the ultrafast demagnetization time characterizing the loss of magnetization occurring after femtosecond laser pulse excitation. The demagnetization time is observed to be inversely proportional to 1-P and as a consequence to the magnetic damping, which can be attributed to the similarity of the spin angular momentum dissipation processes responsible for these two effects. Altogether, our high quality Heusler compounds allow controlling the band structure and therefore the channel for spin angular momentum dissipation. △ Less

Submitted 7 February, 2020; originally announced February 2020.

Band hybridisation at the semimetal-semiconductor transition of Ta$_2$NiSe$_5$ enabled by mirror-symmetry breaking

Authors: Matthew D. Watson, Igor Marković, Edgar Abarca Morales, Patrick Le Fèvre, Michael Merz, Amir A. Haghighirad, Philip D. C. King

Abstract: We present a combined study from angle-resolved photoemission and density-functional theory calculations of the temperature-dependent electronic structure in the excitonic insulator candidate Ta$_2$NiSe$_5$. Our experimental measurements unambiguously establish the normal state as a semimetal with a significant band overlap of $>$100~meV. Our temperature-dependent measurements indicate how these l… ▽ More We present a combined study from angle-resolved photoemission and density-functional theory calculations of the temperature-dependent electronic structure in the excitonic insulator candidate Ta$_2$NiSe$_5$. Our experimental measurements unambiguously establish the normal state as a semimetal with a significant band overlap of $>$100~meV. Our temperature-dependent measurements indicate how these low-energy states hybridise when cooling through the well-known 327~K phase transition in this system. From our calculations and polarisation-dependent photoemission measurements, we demonstrate the importance of a loss of mirror symmetry in enabling the band hybridisation, driven by a shear-like structural distortion which reduces the crystal symmetry from orthorhombic to monoclinic. Our results thus point to the key role of the lattice distortion in enabling the phase transition of Ta$_2$NiSe$_5$. △ Less

Submitted 3 February, 2020; v1 submitted 3 December, 2019; originally announced December 2019.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Research 2, 013236 (2020)

Electronic reconstruction forming a $C_2$-symmetric Dirac semimetal in Ca$_3$Ru$_2$O$_7$

Authors: M. Horio, Q. Wang, V. Granata, K. P. Kramer, Y. Sassa, S. Jöhr, D. Sutter, A. Bold, L. Das, Y. Xu, R. Frison, R. Fittipaldi, T. K. Kim, C. Cacho, J. E. Rault, P. Le Fèvre, F. Bertran, N. C. Plumb, M. Shi, A. Vecchione, M. H. Fischer, J. Chang

Abstract: Electronic band structures in solids stem from a periodic potential reflecting the structure of either the crystal lattice or an electronic order. In the stoichiometric ruthenate Ca$_3$Ru$_2$O$_7$, numerous Fermi surface sensitive probes indicate a low-temperature electronic reconstruction. Yet, the causality and the reconstructed band structure remain unsolved. Here, we show by angle-resolved pho… ▽ More Electronic band structures in solids stem from a periodic potential reflecting the structure of either the crystal lattice or an electronic order. In the stoichiometric ruthenate Ca$_3$Ru$_2$O$_7$, numerous Fermi surface sensitive probes indicate a low-temperature electronic reconstruction. Yet, the causality and the reconstructed band structure remain unsolved. Here, we show by angle-resolved photoemission spectroscopy, how in Ca$_3$Ru$_2$O$_7$ a $C_2$-symmetric massive Dirac semimetal is realized through a Brillouin-zone preserving electronic reconstruction. This Dirac semimetal emerges in a two-stage transition upon cooling. The Dirac point and band velocities are consistent with constraints set by quantum oscillation, thermodynamic, and transport experiments, suggesting that the complete Fermi surface is resolved. The reconstructed structure -- incompatible with translational-symmetry-breaking density waves -- serves as an important test for band structure calculations of correlated electron systems. △ Less

Submitted 19 March, 2021; v1 submitted 27 November, 2019; originally announced November 2019.

Journal ref: npj Quantum Mater. 6, 29 (2021)

Weyl-like points from band inversions of spin-polarised surface states in NbGeSb

Authors: I. Marković, C. A. Hooley, O. J. Clark, F. Mazzola, M. D. Watson, J. M. Riley, K. Volckaert, K. Underwood, M. S. Dyer, P. A. E. Murgatroyd, K. J. Murphy, P. Le Fèvre, F. Bertran, J. Fujii, I. Vobornik, S. Wu, T. Okuda, J. Alaria, P. D. C. King

Abstract: Band inversions are key to stabilising a variety of novel electronic states in solids, from topological surface states in inverted bulk band gaps of topological insulators to the formation of symmetry-protected three-dimensional Dirac and Weyl points and nodal-line semimetals. Here, we create a band inversion not of bulk states, but rather between manifolds of surface states. We realise this by al… ▽ More Band inversions are key to stabilising a variety of novel electronic states in solids, from topological surface states in inverted bulk band gaps of topological insulators to the formation of symmetry-protected three-dimensional Dirac and Weyl points and nodal-line semimetals. Here, we create a band inversion not of bulk states, but rather between manifolds of surface states. We realise this by aliovalent substitution of Nb for Zr and Sb for S in the ZrSiS family of nonsymmorphic semimetals. Using angle-resolved photoemission and density-functional theory, we show how two pairs of surface states, known from ZrSiS, are driven to intersect each other in the vicinity of the Fermi level in NbGeSb, as well as to develop pronounced spin-orbit mediated spin splittings. We demonstrate how mirror symmetry leads to protected crossing points in the resulting spin-orbital entangled surface band structure, thereby stabilising surface state analogues of three-dimensional Weyl points. More generally, our observations suggest new opportunities for engineering topologically and symmetry-protected states via band inversions of surface states. △ Less

Submitted 19 November, 2019; originally announced November 2019.

Comments: In press at Nature Communications. This is the originally submitted manuscript prior to changes during the review process. Contains 20+6 pages, including Supplementary Information

Fermi level tuning of one-dimensional giant Rashba system on a semiconductor substrate: Bi/GaSb(110)-(2x1)

Authors: Takuto Nakamura, Yoshiyuki Ohtsubo, Naoki Tokumasu, Patrick Le Fèvre, François Bertran, Shin-ichiro Ideta, Kiyohisa Tanaka, Kenta Kuroda, Koichiro Yaji, Ayumi Harasawa, Shik Shin, Fumio Komori, Shin-ichi Kimura

Abstract: We fabricated spin-polarized surface electronic states with tunable Fermi level from semiconductor to low-dimensional metal in the Bi/GaSb(110)-(2$\times$1) surface using angle-resolved photoelectron spectroscopy (ARPES) and spin-resolved ARPES. The spin-polarized surface band of Bi/GaSb(110) exhibits quasi-one-dimensional character with the Rashba parameter $α_{\rm R}$ of 4.1 and 2.6 eVÅ\ at the… ▽ More We fabricated spin-polarized surface electronic states with tunable Fermi level from semiconductor to low-dimensional metal in the Bi/GaSb(110)-(2$\times$1) surface using angle-resolved photoelectron spectroscopy (ARPES) and spin-resolved ARPES. The spin-polarized surface band of Bi/GaSb(110) exhibits quasi-one-dimensional character with the Rashba parameter $α_{\rm R}$ of 4.1 and 2.6 eVÅ\ at the $\barΓ$ and $\bar{\rm Y}$ points of the surface Brillouin zone, respectively. The Fermi level of the surface electronic state is tuned in situ by element-selective Ar-ion sputtering on the GaSb substrate. The giant Rashba-type spin splitting with switchable metallic/semiconducting character on semiconductor substrate makes this system a promising candidate for future researches in low-dimensional spintronic phenomena. △ Less

Submitted 2 December, 2019; v1 submitted 29 September, 2019; originally announced September 2019.

Comments: 19 pages, 5 figures, 4 tables

Journal ref: Phys. Rev. Materials 3, 126001 (2019)

ARPES study of orbital characters, symmetry breakings and pseudogaps in doped and pure Sr2IrO4

Authors: Alex Louat, Benjamin Lenz, Silke Biermann, Cyril Martins, François Bertran, Patrick Le Fèvre, Julien E. Rault, Fabrice Bert, Véronique Brouet

Abstract: Sr2IrO4 is characterized by a large spin-orbit coupling, which gives rise to bands with strongly entangled spin and orbital characters, called J=1/2 and J=3/2. We use light-polarization dependent ARPES to study directly the orbital character of these bands and fully map out their dispersion. We observe bands in very good agreement with our cluster dynamical mean-field theory calculations. We show… ▽ More Sr2IrO4 is characterized by a large spin-orbit coupling, which gives rise to bands with strongly entangled spin and orbital characters, called J=1/2 and J=3/2. We use light-polarization dependent ARPES to study directly the orbital character of these bands and fully map out their dispersion. We observe bands in very good agreement with our cluster dynamical mean-field theory calculations. We show that the J=1/2 band, the closest to the Fermi level Ef, is dominated by dxz character along kx and dyz along ky. This is actually in agreement with an isotropic J=1/2 character on average, but this large orbital dependence in k-space was mostly overlooked before. It gives rise to strong modulations of the ARPES intensity that we explain and carefully take into account to compare dispersions in equivalent directions of the Brillouin zone. Although the latter dispersions look different at first, suggesting possible symmetry breakings, they are found essentially similar, once corrected for these intensity variations. In particular, the pseudogap-like features close to the $X$ point appearing in the nearly metallic 15% Rh-doped Sr2IrO4 strongly depend on experimental conditions. We reveal that there is nevertheless an energy scale of 30meV below which spectral weight is suppressed, independent of the experimental conditions, which gives a reliable basis to analyze this behavior. We suggest it is caused by disorder. △ Less

Submitted 2 July, 2019; originally announced July 2019.

Journal ref: Phys. Rev. B 100, 205135 (2019)

Ultra-low magnetic damping in Co 2 Mn-based Heusler compounds: promising materials for spintronic

Authors: C Guillemard, S. Petit-Watelot, L. Pasquier, D. Pierre, J. Ghanbaja, J-C Rojas-Sánchez, A. Bataille, J. Rault, P Le Fèvre, F. Bertran, Stephane Andrieu

Abstract: The prediction of ultra-low magnetic damping in Co 2 MnZ Heusler half-metal thin-film magnets is explored in this study and the damping response is shown to be linked to the underlying electronic properties. By substituting the Z elements in high crystalline quality films (Co 2 MnZ with Z=Si, Ge, Sn, Al, Ga, Sb), electronic properties such as the minority spin band gap, Fermi energy position in th… ▽ More The prediction of ultra-low magnetic damping in Co 2 MnZ Heusler half-metal thin-film magnets is explored in this study and the damping response is shown to be linked to the underlying electronic properties. By substituting the Z elements in high crystalline quality films (Co 2 MnZ with Z=Si, Ge, Sn, Al, Ga, Sb), electronic properties such as the minority spin band gap, Fermi energy position in the gap and spin polarization can be tuned and the consequence on magnetization dynamics analyzed. The experimental results allow us to directly explore the interplay of spin polarization, spin gap, Fermi energy position and the magnetic damping obtained in these films, together with ab initio calculation predictions. The ultra-low magnetic damping coefficients measured in the range 4.1 10-4-9 10-4 for Co 2 MnSi, Ge, Sn, Sb are the lowest values obtained on a conductive layer and offers a clear experimental demonstration of theoretical predictions on Half-Metal Magnetic Heusler compounds and a pathway for future materials design. △ Less

Submitted 22 May, 2019; originally announced May 2019.

Journal ref: Physical Review Applied, American Physical Society, In press

Temperature-driven modification of surface electronic structure on bismuth, a topological border material

Authors: Y. Ohtsubo, Y. Yamashita, J. Kishi, S. Ideta, K. Tanaka, H. Yamane, J. E. Rault, P. Le Fèvre, F. Bertran, S. Kimura

Abstract: Single crystalline bismuth (Bi) is known to have a peculiar electronic structure which is very close to the topological phase transition. The modification of the surface states of Bi depending on the temperature are revealed by angle-resolved photoelectron spectroscopy (ARPES). At low temperature, the upper branch of the surface state merged to the projected bulk conduction bands around the… ▽ More Single crystalline bismuth (Bi) is known to have a peculiar electronic structure which is very close to the topological phase transition. The modification of the surface states of Bi depending on the temperature are revealed by angle-resolved photoelectron spectroscopy (ARPES). At low temperature, the upper branch of the surface state merged to the projected bulk conduction bands around the $\bar{M}$ point of the surface Brillouin zone (SBZ). In contrast, the same branch merged to the projected bulk valence bands at high temperature (400 K). Such behavior could be interpreted as a topological phase transition driven by the temperature, which might be applicable for future spin-thermoelectric devices. We discuss the possible mechanisms to cause such transition, such as the thermal lattice distortion and electron-phonon coupling. △ Less

Submitted 17 February, 2019; originally announced February 2019.

Comments: 15 pages with 6 figures (single column)

Journal ref: Journal of Physics D: Applied Physics 52 254002 (2019)

Electronic band structure of ultimately thin silicon oxide on Ru(0001)

Authors: G. Kremer, J. C. Alvarez-Quiceno, S. Lisi, T. Pierron, C. González Pascual, M. Sicot, B. Kierren, D. Malterre, J. Rault, P. Le Fèvre, F. Bertran, Y. J. Dappe, J. Coraux, P. Pochet, Y. Fagot-Revurat

Abstract: Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a dielectric host material for two-dimensional materials (2D) and heterostructures. We determine the atomic structure and chemical bonding of the ultimately thin version of the oxide, epitaxially grown on Ru(0001). In particular, w… ▽ More Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a dielectric host material for two-dimensional materials (2D) and heterostructures. We determine the atomic structure and chemical bonding of the ultimately thin version of the oxide, epitaxially grown on Ru(0001). In particular, we establish the existence of two sub-lattices defined by metal-oxygen-silicon bridges involving inequivalent substrate sites. We further discover four electronic bands below Fermi level, at high binding energies, two of them forming a Dirac cone at K point, and two others forming semi-flat bands. While the latter two correspond to hybridized states between the oxide and the metal, the former relate to the topmost silicon-oxygen plane, which is not directly coupled to the substrate. Our analysis is based on high resolution X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy, scanning tunneling microscopy, and density functional theory calculations. △ Less

Submitted 12 February, 2019; originally announced February 2019.

Comments: Main part : 31 pages, 6 figures / Supporting information : 13 pages, 11 figures

Journal ref: ACS Nano 13, pp. 4720-4730 (2019)

Evidence of Direct Electronic Band Gap in two-dimensional van der Waals Indium Selenide crystals

Authors: Hugo Henck, Debora Pierucci, Jihene Zribi, Federico Bisti, Evangelos Papalazarou, Jean Christophe Girard, Julien Chaste, Francois Bertran, Patrick Le Fevre, Fausto Sirotti, Luca Perfetti, Christine Giorgetti, Abhay Shukla, Julien E. Rault, Abdelkarim Ouerghi

Abstract: Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding electronic properties, attractive quantum physics, and high photo-response. Metal mono-chalcogenide compounds offer a large variety of electronic properties depend… ▽ More Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding electronic properties, attractive quantum physics, and high photo-response. Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding electronic properties, attractive quantum physics, and high photo-response. Precise experimental determination of the electronic structure of InSe is sorely needed for better understanding of potential properties and device applications. Here, combining scanning tunneling spectroscopy (STS) and two-photon photoemission spectroscopy (2PPE), we demonstrate that InSe exhibits a direct band gap of about 1.25 eV located at the Gamma point of the Brillouin zone (BZ). STS measurements underline the presence of a finite and almost constant density of states (DOS) near the conduction band minimum (CBM) and a very sharp one near the maximum of the valence band (VMB). This particular DOS is generated by a poorly dispersive nature of the top valence band, as shown by angle resolved photoemission spectroscopy (ARPES) investigation. technologies. In fact, a hole effective mass of about m/m0 = -0.95 gammaK direction) was measured. Moreover, using ARPES measurements a spin-orbit splitting of the deeper-lying bands of about 0.35 eV was evidenced. These findings allow a deeper understanding of the InSe electronic properties underlying the potential of III-VI semiconductors for electronic and photonic △ Less

Submitted 24 January, 2019; originally announced January 2019.

Journal ref: Phys. Rev. Materials 3, 034004 (2019)

Coherent and incoherent bands in La and Rh doped Sr3Ir2O7

Authors: V. Brouet, L. Serrier-Garcia, A. Louat, L. Fruchter, F. Bertran, P. Le Fevre, J. Rault, A Forget, D. Colson

Abstract: In Sr2IrO4 and Sr3Ir2O7, correlations, magnetism and spin-orbit coupling compete on similar energy scales, creating a new context to study metal-insulator transitions (MIT). We use here Angle-Resolved photoemission to investigate the MIT as a function of hole and electron doping in Sr3Ir2O7, obtained respectively by Ir/Rh and Sr/La substitutions. We show that there is a clear reduction as a functi… ▽ More In Sr2IrO4 and Sr3Ir2O7, correlations, magnetism and spin-orbit coupling compete on similar energy scales, creating a new context to study metal-insulator transitions (MIT). We use here Angle-Resolved photoemission to investigate the MIT as a function of hole and electron doping in Sr3Ir2O7, obtained respectively by Ir/Rh and Sr/La substitutions. We show that there is a clear reduction as a function of doping of the gap between a lower and upper band on both sides of the Fermi level, from 0.2eV to 0.05eV. Although these two bands have a counterpart in band structure calculations, they are characterized by a very different degree of coherence. The upper band exhibits clear quasiparticle peaks, while the lower band is very broad and loses weight as a function of doping. Moreover, their ARPES spectral weights obey different periodicities, reinforcing the idea of their different nature. We argue that a very similar situation occurs in Sr2IrO4 and conclude that the physics of the two families is essentially the same. △ Less

Submitted 11 December, 2018; v1 submitted 9 October, 2018; originally announced October 2018.

Journal ref: Phys. Rev. B 98, 235101 (2018)

ARPES and transport studies of the elemental topological insulator $α$-Sn

Authors: Quentin Barbedienne, Julien Varignon, Nicolas Reyren, Alain Marty, Celine Vergnaud, Matthieu Jamet, Carmen Gomez-Carbonell, Aristide Lemaître, Patrick Le Fèvre, François Bertran, Amina Taleb-Ibrahimi, Henri Jaffrès, Jean-Marie George, Albert Fert

Abstract: Gray tin, also known as $α$-Sn, can be turned into a three-dimensional topological insulator (3D-TI) by strain and finite size effects. Such room temperature 3D-TI is peculiarly interesting for spintronics due to the spin-momentum locking along the Dirac cone (linear dispersion) of the surface states. Angle resolved photoemission spectroscopy (ARPES) has been used to investigate the dispersion clo… ▽ More Gray tin, also known as $α$-Sn, can be turned into a three-dimensional topological insulator (3D-TI) by strain and finite size effects. Such room temperature 3D-TI is peculiarly interesting for spintronics due to the spin-momentum locking along the Dirac cone (linear dispersion) of the surface states. Angle resolved photoemission spectroscopy (ARPES) has been used to investigate the dispersion close to the Fermi level in thin (0\,0\,1)-oriented epitaxially strained films of $α$-Sn, for different film thicknesses as well as for different capping layers (Al, AlO$_x$ and MgO). Indeed a proper capping layer is necessary to be able to use $α$-Sn surface states for spintronics applications. In contrast with free surfaces or surfaces coated with Ag, coating the $α$-Sn surface with Al or AlO$_x$ leads to a drop of the Fermi level below the Dirac point, an important consequence for transport is the presence of bulk states at the Fermi level. $α$-Sn films coated by AlO$_x$ are studied by electrical magnetotransport: despite clear evidence of surface states revealed by Shubnikov-de Haas oscillations, an important part of the magneto-transport properties is governed by "bulk" electronic states attributed to the $Γ8$ band, as suggested by {\it ab-initio} calculations. △ Less

Submitted 30 November, 2018; v1 submitted 30 July, 2018; originally announced July 2018.

Journal ref: Phys. Rev. B 98, 195445 (2018)

Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure

Authors: Debora Pierucci, Jihene Zribi, Hugo Henck, Julien Chaste, Mathieu G. Silly, François Bertran, Patrick Le Fevre, Bernard Gil, Alex Summerfield, Peter H. Beton, Sergei V. Novikov, Guillaume Cassabois, Julien E. Rault, Abdelkarim Ouerghi

Abstract: We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy (MBE). X-ray photoelectron spectroscopy (XPS) suggests an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurement, reflec… ▽ More We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy (MBE). X-ray photoelectron spectroscopy (XPS) suggests an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurement, reflecting the high quality of the h-BN films. The measured valence band maximum (VBM) located at 2.8 eV below the Fermi level reveals the presence of undoped h-BN films (band gap ~ 6 eV). These results demonstrate that, although only weak van der Waals interactions are present between h-BN and graphite, a long range ordering of h-BN can be obtained even on polycrystalline graphite via van der Waals epitaxy, offering the prospect of large area, single layer h-BN. △ Less

Submitted 19 June, 2018; originally announced June 2018.

Comments: 9 pages, 4 figures SI 5 pages 2 figures

Journal ref: Applied Physics Letters 112, 253102 (2018)

Band structure and Fermi surfaces of the reentrant ferromagnetic superconductor Eu(Fe0.86Ir0.14)2As2

Authors: S. Xing, J. Mansart, V. Brouet, M. Sicot, Y. Fagot-Revurat, B. Kierren, P. Le Fèvre, F. Bertran, J. E. Rault, U. B. Paramanik, Z. Hossain, A. Chainani, D. Malterre

Abstract: The electronic structure of the reentrant superconductor Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As$_{2}$ (T$_c$ = 22 K) with coexisting ferromagnetic order (T$_M$ = 18 K) is investigated using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling spectroscopy (STS). We study the in-plane and out-of-plane band dispersions and Fermi surface (FS) of Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As… ▽ More The electronic structure of the reentrant superconductor Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As$_{2}$ (T$_c$ = 22 K) with coexisting ferromagnetic order (T$_M$ = 18 K) is investigated using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling spectroscopy (STS). We study the in-plane and out-of-plane band dispersions and Fermi surface (FS) of Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As$_{2}$. The near E$_F$ Fe 3d-derived band dispersions near the $Γ$ and X high-symmetry points show changes due to Ir substitution, but the FS topology is preserved. From momentum dependent measurements of the superconducting gap measured at T = 5 K, we estimate an essentially isotropic s-wave gap ($Δ\sim5.25\pm 0.25$ meV), indicative of strong-coupling superconductivity with 2$Δ$/k$_{B}$T$_{c}\simeq$ 5.8. The gap gets closed at temperatures T $\geq$ 10 K, and this is attributed to the resistive phase which sets in at T$_M$ = 18 K due to the Eu$^{2+}$-derived magnetic order. The modifications of the FS with Ir substitution clearly indicates an effective hole doping with respect to the parent compound. △ Less

Submitted 18 June, 2018; originally announced June 2018.

Comments: 6 pages, 5 figures

Journal ref: Physical Review B 96, 174513 (2017)

Electronic band structure of Two-Dimensional WS2/Graphene van der Waals Heterostructures

Authors: Hugo Henck, Zeineb Ben Aziza, Debora Pierucci, Feriel Laourine, Francesco Reale, Pawel Palczynski, Julien Chaste, Mathieu G. Silly, François Bertran, Patrick Le Fevre, Emmanuel Lhuillier, Taro Wakamura, Cecilia Mattevi, Julien E. Rault, Matteo Calandra, Abdelkarim Ouerghi

Abstract: Combining single-layer two-dimensional semiconducting transition metal dichalcogenides (TMDs) with graphene layer in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these heterostructures. Here, we report the electronic and structural properties of transferred single layer WS2 on epitaxial graphene using micro-Raman spectroscopy, angle-res… ▽ More Combining single-layer two-dimensional semiconducting transition metal dichalcogenides (TMDs) with graphene layer in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these heterostructures. Here, we report the electronic and structural properties of transferred single layer WS2 on epitaxial graphene using micro-Raman spectroscopy, angle-resolved photoemission spectroscopy measurements (ARPES) and Density Functional Theory (DFT) calculations. The results show good electronic properties as well as well-defined band arising from the strong splitting of the single layer WS2 valence band at K points, with a maximum splitting of 0.44 eV. By comparing our DFT results with local and hybrid functionals, we find the top valence band of the experimental heterostructure is close to the calculations for suspended single layer WS2. . Our results provide an important reference for future studies of electronic properties of WS2 and its applications in valleytronic devices. △ Less

Submitted 13 June, 2018; originally announced June 2018.

Comments: 11 pages, 3 figures + SI 7 pages 8 figures

Journal ref: Physical Review B 97, 155421 (2018)

Interface Dipole and Band Bending in Hybrid p-n Heterojunction MoS2/GaN(0001)

Authors: Hugo Henck, Zeineb Ben Aziza, Olivia Zill, Debora Pierucci, Carl H. Naylor, Mathieu G. Silly, Noelle Gogneau, Fabrice Oehler, Stephane Collin, Julien Brault, Fausto Sirotti, François Bertran, Patrick Le Fèvre, Stéphane Berciaud, A. T Charlie Johnson, Emmanuel Lhuillier, Julien E. Rault, Abdelkarim Ouerghi

Abstract: Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic properties of a mixed-dimensional heterostructure composed of intrinsic n-doped MoS2 flakes transferred on p-doped GaN(0001) layers. Based on angle-resolved photoemission spectroscopy (ARPES) and high resolution X-ray p… ▽ More Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic properties of a mixed-dimensional heterostructure composed of intrinsic n-doped MoS2 flakes transferred on p-doped GaN(0001) layers. Based on angle-resolved photoemission spectroscopy (ARPES) and high resolution X-ray photoemission spectroscopy (HR-XPS), we investigate the electronic structure modification induced by the interlayer interactions in MoS2/GaN heterostructure. In particular, a shift of the valence band with respect to the Fermi level for MoS2/GaN heterostructure is observed; which is the signature of a charge transfer from the 2D monolayer MoS2 to GaN. ARPES and HR-XPS revealed an interface dipole associated with local charge transfer from the GaN layer to the MoS2 monolayer. Valence and conduction band offsets between MoS2 and GaN are determined to be 0.77 and -0.51 eV, respectively. Based on the measured work functions and band bendings, we establish the formation of an interface dipole between GaN and MoS2 of 0.2 eV. △ Less

Submitted 8 June, 2018; originally announced June 2018.

Comments: 13 pages, 5 figures + SI 2 pages, 2 figures

Journal ref: Physical Review B 96, 115312 (2017)

Tunable Doping in Hydrogenated Single Layered Molybdenum Disulfide

Authors: Debora Pierucci, Hugo Henck, Zeineb Ben Aziza, Carl H. Naylor, A. Balan, Julien E. Rault, M. G. Silly, Yannick J. Dappe, François Bertran, Patrick Le Fevre, F. Sirotti, A. T Charlie Johnson, Abdelkarim Ouerghi

Abstract: Structural defects in the molybdenum disulfide (MoS2) monolayer are widely known for strongly altering its properties. Therefore, a deep understanding of these structural defects and how they affect MoS2 electronic properties is of fundamental importance. Here, we report on the incorporation of atomic hydrogen in mono-layered MoS2 to tune its structural defects. We demonstrate that the electronic… ▽ More Structural defects in the molybdenum disulfide (MoS2) monolayer are widely known for strongly altering its properties. Therefore, a deep understanding of these structural defects and how they affect MoS2 electronic properties is of fundamental importance. Here, we report on the incorporation of atomic hydrogen in mono-layered MoS2 to tune its structural defects. We demonstrate that the electronic properties of single layer MoS2 can be tuned from the intrinsic electron (n) to hole (p) doping via controlled exposure to atomic hydrogen at room temperature. Moreover, this hydrogenation process represents a viable technique to completely saturate the sulfur vacancies present in the MoS2 flakes. The successful incorporation of hydrogen in MoS2 leads to the modification of the electronic properties as evidenced by high resolution X-ray photoemission spectroscopy and density functional theory calculations. Micro-Raman spectroscopy and angle resolved photoemission spectroscopy measurements show the high quality of the hydrogenated MoS2 confirming the efficiency of our hydrogenation process. These results demonstrate that the MoS2 hydrogenation could be a significant and efficient way to achieve tunable doping of transition metal dichalcogenides (TMD) materials with non-TMD elements. △ Less

Submitted 8 June, 2018; v1 submitted 7 June, 2018; originally announced June 2018.

Comments: 15 pages, 6 figures + SI 3 pages 3 figures. Pre-print published with the authorization of ACS Publications

Journal ref: ACS Nano 11, 1755 (2017)

High-density two-dimensional electron system induced by oxygen vacancies in ZnO

Authors: T. C. Rödel, J. Dai, F. Fortuna, E. Frantzeskakis, P. Le Fèvre, F. Bertran, M. Kobayashi, R. Yukawa, T. Mitsuhashi, M. Kitamura, K. Horiba, H. Kumigashira, A. F. Santander-Syro

Abstract: We realize a two-dimensional electron system (2DES) in ZnO by simply depositing pure aluminum on its surface in ultra-high vacuum, and characterize its electronic structure using angle-resolved photoemission spectroscopy. The aluminum oxidizes into alumina by creating oxygen vacancies that dope the bulk conduction band of ZnO and confine the electrons near its surface. The electron density of the… ▽ More We realize a two-dimensional electron system (2DES) in ZnO by simply depositing pure aluminum on its surface in ultra-high vacuum, and characterize its electronic structure using angle-resolved photoemission spectroscopy. The aluminum oxidizes into alumina by creating oxygen vacancies that dope the bulk conduction band of ZnO and confine the electrons near its surface. The electron density of the 2DES is up to two orders of magnitude higher than those obtained in ZnO heterostructures. The 2DES shows two $s$-type subbands, that we compare to the $d$-like 2DESs in titanates, with clear signatures of many-body interactions that we analyze through a self-consistent extraction of the system self-energy and a modeling as a coupling of a 2D Fermi liquid with a Debye distribution of phonons. △ Less

Submitted 19 February, 2018; originally announced February 2018.

Comments: Article + Supplementary Material, 12 pages, 3 main figures, 6 supplementary figures

Journal ref: Phys. Rev. Materials 2, 051601 (2018)

Co/Ni multilayers for spintronics: high spin-polarization and tunable magnetic anisotropy

Authors: S. Andrieu, T. Hauet, M. Gottwald, A. Rajanikanth, L. Calmels, A. M. Bataille, F. Montaigne, S. Mangin, E. Otero, P. Ohresser, P. Le Fevre, F. Bertran, A. Resta, A. Vlad, A. Coati, Y. Garreau

Abstract: In this paper we analyze in details the electronic properties of (Co/Ni) multilayers, a model system for spintronics devices. We use magneto-optical Kerr (MOKE), spin-polarized photoemission spectroscopy (SRPES), x-ray magnetic circular dichroism (XMCD) and anomalous surface diffraction experiments to investigate the electronic properties and perpendicular magnetic anisotropy (PMA) in [Co(x)/Ni(y)… ▽ More In this paper we analyze in details the electronic properties of (Co/Ni) multilayers, a model system for spintronics devices. We use magneto-optical Kerr (MOKE), spin-polarized photoemission spectroscopy (SRPES), x-ray magnetic circular dichroism (XMCD) and anomalous surface diffraction experiments to investigate the electronic properties and perpendicular magnetic anisotropy (PMA) in [Co(x)/Ni(y)] single-crystalline stacks grown by molecular beam epitaxy. △ Less

Submitted 6 February, 2018; originally announced February 2018.

Comments: 11 pages, 11 figures, 1 Table

Journal ref: Phys. Rev. Materials 2, 064410 (2018)

Atomic-layer-resolved composition and electronic structure of the cuprate Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ from soft x-ray standing-wave photoemission

Authors: Cheng-Tai Kuo, Shih-Chieh Lin, Giuseppina Conti, Shu-Ting Pi, Luca Moreschini, Aaron Bostwick, Julia Meyer-Ilse, Eric Gullikson, Jeffrey B. Kortright, Slavomir Nemšák, Julien E. Rault, Patrick Le Fèvre, François Bertran, Andrés F. Santander-Syro, Ivan A. Vartanyants, Warren E. Pickett, Romuald Saint-Martin, Amina Taleb, Charles S. Fadley

Abstract: A major remaining challenge in the superconducting cuprates is the unambiguous differentiation of the composition and electronic structure of the CuO$_2$ layers and those of the intermediate layers. The large c axis for these materials permits employing soft x-ray (930.3 eV) standing wave (SW) excitation in photoemission that yields atomic layer-by-atomic layer depth resolution of these properties… ▽ More A major remaining challenge in the superconducting cuprates is the unambiguous differentiation of the composition and electronic structure of the CuO$_2$ layers and those of the intermediate layers. The large c axis for these materials permits employing soft x-ray (930.3 eV) standing wave (SW) excitation in photoemission that yields atomic layer-by-atomic layer depth resolution of these properties. Applying SW photoemission to Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ yields the depth distribution of atomic composition and the layer-resolved densities of states. We detect significant Ca presence in the SrO layers and oxygen bonding to three different cations. The layer-resolved valence electronic structure is found to be strongly influenced by the supermodulation structure--as determined by comparison to DFT calculations, by Ca-Sr intermixing, and by the Cu 3d-3d Coulomb interaction, further clarifying the complex interactions in this prototypical cuprate. Measurements of this type for other quasi-two-dimensional materials with large-c represent a promising future direction. △ Less

Submitted 24 September, 2018; v1 submitted 16 January, 2018; originally announced January 2018.

Comments: 22 pages, 5 figures, plus Supplemental Material (15 pages)

Report number: arXiv:1801.05142

Journal ref: Phys. Rev. B 98, 155133 (2018)

Epitaxial Heusler Superlattice Co2MnAl/Fe2MnAl with Perpendicular Magnetic Anisotropy and Termination-Dependent Half-Metallicity

Authors: Tobias L. Brown-Heft, Anthony P. McFadden, John A. Logan, Charles Guillemard, Patrick Le Fèvre, François Bertran, Stéphane Andrieu, Chris J. Palmstrøm

Abstract: Single-crystal Heusler atomic-scale superlattices that have been predicted to exhibit perpendicular magnetic anisotropy and half-metallicity have been successfully grown by molecular beam epitaxy. Superlattices consisting of full-Heusler Co$_2$MnAl and Fe$_2$MnAl with one to three unit cell periodicity were grown on GaAs (001), MgO (001), and Cr (001)/MgO (001). Electron energy loss spectroscopy m… ▽ More Single-crystal Heusler atomic-scale superlattices that have been predicted to exhibit perpendicular magnetic anisotropy and half-metallicity have been successfully grown by molecular beam epitaxy. Superlattices consisting of full-Heusler Co$_2$MnAl and Fe$_2$MnAl with one to three unit cell periodicity were grown on GaAs (001), MgO (001), and Cr (001)/MgO (001). Electron energy loss spectroscopy maps confirmed clearly segregated epitaxial Heusler layers with high cobalt or high iron concentrations for samples grown near room temperature on GaAs (001). Superlattice structures grown with an excess of aluminum had significantly lower thin film shape anisotropy and resulted in an out-of-plane spin reorientation transition at temperatures below 200 K for samples grown on GaAs (001). Synchrotron-based spin resolved photoemission spectroscopy found that the superlattice structure improves the Fermi level spin polarization near the X point in the bulk Brillouin zone. Stoichiometric Co$_2$MnAl terminated superlattice grown on MgO (001) had a spin polarization of 95%, while a pure Co$_2$MnAl film had a spin polarization of only 65%. △ Less

Submitted 8 January, 2018; originally announced January 2018.

Comments: 14 pages, 1 table, 6 figures

Journal ref: Phys. Rev. Materials 2, 034402 (2018)

Formation of an incoherent metallic state in Rh-doped Sr$_2$IrO$_4$

Authors: Alex Louat, Fabrice Bert, Lise Serrier-Garcia, François Bertran, Patrick Le Fèvre, Julien Rault, Véronique Brouet

Abstract: Sr$_2$IrO$_4$ is the archetype of the spin-orbit Mott insulator, but the nature of the metallic states that may emerge from this type of insulator is still not very well known. We study with angle-resolved photoemission the insulator-to-metal transition observed in Sr$_2$Ir$_{1-x}$Rh$_x$O$_4$ when Ir is substituted by Rh (0.02 < $x$ < 0.35). The originality of the Rh doping is that Ir and Rh, whic… ▽ More Sr$_2$IrO$_4$ is the archetype of the spin-orbit Mott insulator, but the nature of the metallic states that may emerge from this type of insulator is still not very well known. We study with angle-resolved photoemission the insulator-to-metal transition observed in Sr$_2$Ir$_{1-x}$Rh$_x$O$_4$ when Ir is substituted by Rh (0.02 < $x$ < 0.35). The originality of the Rh doping is that Ir and Rh, which are formally isovalent, adopt different charge states, a rather unusual and inhomogeneous situation. We show that the evolution to the metallic state can be essentially understood as a shift of the Fermi level into the lower Hubbard band of Sr$_2$IrO$_4$. The Mott gap appears quite insensitive to the introduction of up to $\sim$20\% holes in this band. The metallic phase, which forms for $x$ > 0.07, is not a Fermi liquid. It is characterized by the absence of quasiparticles, unrenormalized band dispersion compared to calculations and an $\sim$30-meV pseudo-gap on the entire Fermi surface. △ Less

Submitted 27 April, 2018; v1 submitted 4 January, 2018; originally announced January 2018.

Journal ref: Phys. Rev. B 97, 161109 (2018)

Two-dimensional electron system at the magnetically tunable EuO/SrTiO$_3$ interface

Authors: Patrick Lömker, Tobias C. Rödel, Timm Gerber, Franck Fortuna, Emmanouil Frantzeskakis, Patrick Le Fèvre, François Bertran, Martina Müller, Andrés F. Santander-Syro

Abstract: We create a two-dimensional electron system (2DES) at the interface between EuO, a ferromagnetic insulator, and SrTiO3, a transparent non-magnetic insulator considered the bedrock of oxide-based electronics. This is achieved by a controlled in-situ redox reaction between pure metallic Eu deposited at room temperature on the surface of SrTiO3, an innovative bottom-up approach that can be easily gen… ▽ More We create a two-dimensional electron system (2DES) at the interface between EuO, a ferromagnetic insulator, and SrTiO3, a transparent non-magnetic insulator considered the bedrock of oxide-based electronics. This is achieved by a controlled in-situ redox reaction between pure metallic Eu deposited at room temperature on the surface of SrTiO3, an innovative bottom-up approach that can be easily generalized to other functional oxides and scaled to applications. Additionally, we find that the resulting EuO capping layer can be tuned from paramagnetic to ferromagnetic, depending on the layer thickness. These results demonstrate that the simple, novel technique of creating 2DESs in oxides by deposition of elementary reducing agents [T. C. Rödel et al., Adv. Mater. 28, 1976 (2016)] can be extended to simultaneously produce an active, e.g. magnetic, capping layer enabling the realization and control of additional functionalities in such oxide-based 2DESs. △ Less

Submitted 13 December, 2017; originally announced December 2017.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Materials 1, 062001(R) (2017)

Cu metal / Mn phthalocyanine organic spinterfaces atop Co with high spin polarization at room temperature

Authors: E. Urbain, F. Ibrahim, M. Studniarek, F. Ngassam, L. Joly, J. Arabski, F. Scheurer, F. Bertran, P. Le Fèvre, G. Garreau, E. Denys, P. Wetzel, M. Alouani, E. Beaurepaire, S. Boukari, M. Bowen, W. Weber

Abstract: The organic spinterface describes the spin-polarized properties that develop, due to charge transfer, at the interface between a ferromagnetic metal (FM) and the molecules of an organic semiconductor. Yet, if the latter is also magnetic (e.g. molecular spin chains), the interfacial magnetic coupling can generate complexity within magnetotransport experiments. Also, assembling this interface may de… ▽ More The organic spinterface describes the spin-polarized properties that develop, due to charge transfer, at the interface between a ferromagnetic metal (FM) and the molecules of an organic semiconductor. Yet, if the latter is also magnetic (e.g. molecular spin chains), the interfacial magnetic coupling can generate complexity within magnetotransport experiments. Also, assembling this interface may degrade the properties of its constituents (e.g. spin crossover or non-sublimable molecules). To circumvent these issues, one can separate the molecular and FM films using a less reactive nonmagnetic metal (NM). Spin-resolved photoemission spectroscopy measurements on the prototypical system Co(001)//Cu/Mnphthalocyanine (MnPc) reveal that the Cu/MnPc spinterface atop ferromagnetic Co is highly spin-polarized at room temperature, up to Cu spacer thicknesses of at least 10 monolayers. Ab-initio theory describes a spin polarization of the topmost Cu layer after molecular hybridization that can be accompanied by magnetic hardening effects. This spinterface's unexpected robustness paves the way for 1) integrating electronically fragile molecules within organic spinterfaces, and 2) manipulating molecular spin chains using the well-documented spin transfer torque properties of the FM/NM bilayer. △ Less

Submitted 7 December, 2017; originally announced December 2017.

Comments: 16 pages. Submitted

Converting topological insulators into topological metals within the tetradymite family

Authors: K. -W. Chen, N. Aryal, J. Dai, D. Graf, S. Zhang, S. Das, P. Le Fevre, F. Bertran, R. Yukawa, K. Horiba, H. Kumigashira, E. Frantzeskakis, F. Fortuna, L. Balicas, A. F. Santander-Syro, E. Manousakis, R. E. Baumbach

Abstract: We report the electronic band structures and concomitant Fermi surfaces for a family of exfoliable tetradymite compounds with the formula $T_2$$Ch_2$$Pn$, obtained as a modification to the well-known topological insulator binaries Bi$_2$(Se,Te)$_3$ by replacing one chalcogen ($Ch$) with a pnictogen ($Pn$) and Bi with the tetravalent transition metals $T$ $=$ Ti, Zr, or Hf. This imbalances the elec… ▽ More We report the electronic band structures and concomitant Fermi surfaces for a family of exfoliable tetradymite compounds with the formula $T_2$$Ch_2$$Pn$, obtained as a modification to the well-known topological insulator binaries Bi$_2$(Se,Te)$_3$ by replacing one chalcogen ($Ch$) with a pnictogen ($Pn$) and Bi with the tetravalent transition metals $T$ $=$ Ti, Zr, or Hf. This imbalances the electron count and results in layered metals characterized by relatively high carrier mobilities and bulk two-dimensional Fermi surfaces whose topography is well-described by first principles calculations. Intriguingly, slab electronic structure calculations predict Dirac-like surface states. In contrast to Bi$_2$Se$_3$, where the surface Dirac bands are at the $Γ-$point, for (Zr,Hf)$_2$Te$_2$(P,As) there are Dirac cones of strong topological character around both the $\bar Γ$- and $\bar {M}$-points which are above and below the Fermi energy, respectively. For Ti$_2$Te$_2$P the surface state is predicted to exist only around the $\bar {M}$-point. In agreement with these predictions, the surface states that are located below the Fermi energy are observed by angle resolved photoemission spectroscopy measurements, revealing that they coexist with the bulk metallic state. Thus, this family of materials provides a foundation upon which to develop novel phenomena that exploit both the bulk and surface states (e.g., topological superconductivity). △ Less

Submitted 11 November, 2017; originally announced November 2017.

Journal ref: Phys. Rev. B 97, 165112 (2018)