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Excitonic Absorption Signatures of Twisted Bilayer WSe$_{2}$ by Electron Energy-Loss Spectroscopy
Authors:
Steffi Y. Woo,
Alberto Zobelli,
Robert Schneider,
Ashish Arora,
Johann A. Preuß,
Benjamin J. Carey,
Steffen Michaelis de Vasconcellos,
Maurizia Palummo,
Rudolf Bratschitsch,
Luiz H. G. Tizei
Abstract:
Moiré twist angle underpins the interlayer interaction of excitons in twisted van der Waals hetero- and homo-structures. The influence of twist angle on the excitonic absorption of twisted bilayer tungsten diselenide (WSe$_{2}$) has been investigated using electron energy-loss spectroscopy. Atomic-resolution imaging by scanning transmission electron microscopy was used to determine key structural…
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Moiré twist angle underpins the interlayer interaction of excitons in twisted van der Waals hetero- and homo-structures. The influence of twist angle on the excitonic absorption of twisted bilayer tungsten diselenide (WSe$_{2}$) has been investigated using electron energy-loss spectroscopy. Atomic-resolution imaging by scanning transmission electron microscopy was used to determine key structural parameters, including the nanoscale measurement of the relative twist angle and stacking order. Detailed spectral analysis revealed a pronounced blueshift in the high-energy excitonic peak C with increasing twist angle, up to 200 meV when compared to the AA$^{\prime}$ stacking. The experimental findings have been discussed relative to first-principle calculations of the dielectric response of the AA$^{\prime}$ stacked bilayer WSe$_{2}$ as compared to monolayer WSe$_{2}$ by employing the \textit{GW} plus Bethe-Salpeter equation (BSE) approaches, resolving the origin of higher energy spectral features from ensembles of excitonic transitions, and thus any discrepancies between previous calculations. Furthermore, the electronic structure of moiré supercells spanning twist angles of $\sim$9.5-46.5$^{\circ}$ calculated by density functional theory (DFT) were unfolded, showing an uplifting of the conduction band minimum near the $Q$ point and minimal change in the upper valence band concurrently. The combined experiment/theory investigation provides valuable insight into the physical origins of high-energy absorption resonances in twisted bilayers, which enables to track the evolution of interlayer coupling from tuning of the exciton C transitions by absorption spectroscopy.
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Submitted 22 December, 2022;
originally announced December 2022.
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Resonant and phonon-assisted ultrafast coherent control of a single hBN color center
Authors:
Johann A. Preuß,
Daniel Groll,
Robert Schmidt,
Thilo Hahn,
Paweł Machnikowski,
Rudolf Bratschitsch,
Tilmann Kuhn,
Steffen Michaelis de Vasconcellos,
Daniel Wigger
Abstract:
Single-photon emitters in solid-state systems are important building blocks for scalable quantum technologies. Recently, quantum light emitters have been discovered in the wide-gap van der Waals insulator hBN. These color centers have attracted considerable attention due to their quantum performance at elevated temperatures and wide range of transition energies. Here, we demonstrate coherent state…
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Single-photon emitters in solid-state systems are important building blocks for scalable quantum technologies. Recently, quantum light emitters have been discovered in the wide-gap van der Waals insulator hBN. These color centers have attracted considerable attention due to their quantum performance at elevated temperatures and wide range of transition energies. Here, we demonstrate coherent state manipulation of a single hBN color center with ultrafast laser pulses and investigate in our joint experiment-theory study the coupling between the electronic system and phonons. We demonstrate that coherent control can not only be performed resonantly on the optical transition giving access to the decoherence but also phonon-assisted, which reveals the internal phonon quantum dynamics. In the case of optical phonons we measure their decoherence, stemming in part from their anharmonic decay. Dephasing induced by the creation of acoustic phonons manifests as a rapid decrease of the coherent control signal when traveling phonon wave packets are emitted. Furthermore, we demonstrate that the quantum superposition between a phonon-assisted process and the resonant excitation causes ultrafast oscillations of the coherent control signal. Our results pave the way for ultrafast phonon quantum state control on the nanoscale and open up a new promising perspective for hybrid quantum technologies.
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Submitted 10 May, 2022;
originally announced May 2022.
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Substrate influence on transition metal dichalcogenide monolayer exciton absorption linewidth broadening
Authors:
Fuhui Shao,
Steffi Y. Woo,
Nianjheng Wu,
Robert Schneider,
Andrew J. Mayne,
Steffen Michaelis de Vasconcellos,
Ashish Arora,
Benjamin J. Carey,
Johann A. Preuß,
Noémie Bonnet,
Cecilia Mattevi,
Kenji Watanabe,
Takashi Taniguchi,
Zhichuan Niu,
Rudolf Bratschitsch,
Luiz H. G. Tizei
Abstract:
The excitonic states of transition metal dichacolgenide (TMD) monolayers are heavily influenced by their external dielectric environment based on the substrate used. In this work, various wide bandgap dielectric materials, namely hexagonal boron nitride (\textit{h}-BN) and amorphous silicon nitride (Si$_3$N$_4$), under different configurations as support or encapsulation material for WS$_2$ monola…
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The excitonic states of transition metal dichacolgenide (TMD) monolayers are heavily influenced by their external dielectric environment based on the substrate used. In this work, various wide bandgap dielectric materials, namely hexagonal boron nitride (\textit{h}-BN) and amorphous silicon nitride (Si$_3$N$_4$), under different configurations as support or encapsulation material for WS$_2$ monolayers are investigated to disentangle the factors contributing to inhomogeneous broadening of exciton absorption lines in TMDs using electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM). In addition, monolayer roughness in each configuration was determined from tilt series of electron diffraction patterns by assessing the broadening of diffraction spots by comparison with simulations. From our experiments, the main factors that play a role in linewidth broadening can be classified in increasing order of importance by: monolayer roughness, surface cleanliness, and substrate-induced charge trapping. Furthermore, because high-energy electrons are used as a probe, electron beam-induced damage on bare TMD monolayer is also revealed to be responsible for irreversible linewidth increases. \textit{h}-BN not only provides clean surfaces of TMD monolayer, and minimal charge disorder, but can also protect the TMD from irradiation damage. This work provides a better understanding of the mechanisms by which \textit{h}-BN remains, to date, the most compatible material for 2D material encapsulation, facilitating the realization of intrinsic material properties to their full potential.
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Submitted 9 February, 2022;
originally announced February 2022.
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Phonon-assisted emission and absorption of individual color centers in hexagonal boron nitride
Authors:
Daniel Wigger,
Robert Schmidt,
Osvaldo Del Pozo-Zamudio,
Johann A. Preuß,
Philipp Tonndorf,
Robert Schneider,
Paul Steeger,
Johannes Kern,
Yashar Khodaei,
Jaroslaw Sperling,
Steffen Michaelis de Vasconcellos,
Rudolf Bratschitsch,
Tilmann Kuhn
Abstract:
Defect centers in hexagonal boron nitride represent room-temperature single-photon sources in a layered van der Waals material. These light emitters appear with a wide range of transition energies ranging over the entire visible spectrum, which renders the identification of the underlying atomic structure challenging. In addition to their eminent properties as quantum light emitters, the coupling…
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Defect centers in hexagonal boron nitride represent room-temperature single-photon sources in a layered van der Waals material. These light emitters appear with a wide range of transition energies ranging over the entire visible spectrum, which renders the identification of the underlying atomic structure challenging. In addition to their eminent properties as quantum light emitters, the coupling to phonons is remarkable. Their photoluminescence exhibits significant side band emission well separated from the zero phonon line (ZPL) and an asymmetric broadening of the ZPL itself. In this combined theoretical and experimental study we show that the phonon side bands can be well described in terms of the coupling to bulk longitudinal optical (LO) phonons. To describe the ZPL asymmetry we show that in addition to the coupling to longitudinal acoustic (LA) phonons also the coupling to local mode oscillations of the defect center with respect to the entire host crystal has to be considered. By studying the influence of the emitter's wave function dimensions on the phonon side bands we find reasonable values for size of the wave function and the deformation potentials. We perform photoluminescence excitation measurements to demonstrate that the excitation of the emitters is most efficient by LO-phonon assisted absorption.
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Submitted 27 March, 2019;
originally announced March 2019.
