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Low Temperature Growth of Graphene on Semiconductor
Authors:
Håkon I. Røst,
Rajesh K. Chellappan,
Frode S. Strand,
Antonija Grubišić-Čabo,
Benjamen P. Reed,
Mauricio J. Prieto,
Liviu C. Tǎnase,
Lucas de Souza Caldas,
Thipusa Wongpinij,
Chanan Euaruksakul,
Thomas Schmidt,
Anton Tadich,
Bruce C. C. Cowie,
Zheshen Li,
Simon P. Cooil,
Justin W. Wells
Abstract:
The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene on suitable substrates. We demonstrate that epitaxial graphene can be grown on transition metal treated 6H-SiC(0001) surfaces, with an onset of graphitization starting around $450-500^\circ\text{C}$. From the chemical r…
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The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene on suitable substrates. We demonstrate that epitaxial graphene can be grown on transition metal treated 6H-SiC(0001) surfaces, with an onset of graphitization starting around $450-500^\circ\text{C}$. From the chemical reaction between SiC and thin films of Fe or Ru, $\text{sp}^{3}$ carbon is liberated from the SiC crystal and converted to $\text{sp}^{2}$ carbon at the surface. The quality of the graphene is demonstrated using angle-resolved photoemission spectroscopy and low-energy electron diffraction. Furthermore, the orientation and placement of the graphene layers relative to the SiC substrate is verified using angle-resolved absorption spectroscopy and energy-dependent photoelectron spectroscopy, respectively. With subsequent thermal treatments to higher temperatures, a steerable diffusion of the metal layers into the bulk SiC is achieved. The result is graphene supported on magnetic silicide or optionally, directly on semiconductor, at temperatures ideal for further large-scale processing into graphene based device structures.
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Submitted 27 November, 2020;
originally announced November 2020.
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Outstanding Thermal Conductivity of Single Atomic Layer Isotope-Modified Boron Nitride
Authors:
Qiran Cai,
Declan Scullion,
Wei Gan,
Alexey Falin,
Pavel Cizek,
Song Liu,
James H. Edgar,
Rong Liu,
Bruce C. C. Cowie,
Elton J. G. Santos,
Lu Hua Li
Abstract:
Materials with high thermal conductivities (k) is valuable to solve the challenge of waste heat dissipation in highly integrated and miniaturized modern devices. Herein, we report the first synthesis of atomically thin isotopically pure hexagonal boron nitride (BN) and its one of the highest k among all semiconductors and electric insulators. Single atomic layer (1L) BN enriched with 11B has a k u…
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Materials with high thermal conductivities (k) is valuable to solve the challenge of waste heat dissipation in highly integrated and miniaturized modern devices. Herein, we report the first synthesis of atomically thin isotopically pure hexagonal boron nitride (BN) and its one of the highest k among all semiconductors and electric insulators. Single atomic layer (1L) BN enriched with 11B has a k up to 1009 W/mK at room temperature. We find that the isotope engineering mainly suppresses the out-of-plane optical (ZO) phonon scatterings in BN, which subsequently reduces acoustic-optical scatterings between ZO and transverse acoustic (TA) and longitudinal acoustic (LA) phonons. On the other hand, reducing the thickness to single atomic layer diminishes the interlayer interactions and hence Umklapp scatterings of the out-of-plane acoustic (ZA) phonons, though this thickness-induced k enhancement is not as dramatic as that in naturally occurring BN. With many of its unique properties, atomically thin monoisotopic BN is promising on heat management in van der Waals (vdW) devices and future flexible electronics. The isotope engineering of atomically thin BN may also open up other appealing applications and opportunities in 2D materials yet to be explored.
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Submitted 21 August, 2020; v1 submitted 2 August, 2020;
originally announced August 2020.
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Molecule-Induced Conformational Change in Boron Nitride Nanosheets with Enhanced Surface Adsorption
Authors:
Qiran Cai,
Aijun Du,
Guoping Gao,
Srikanth Mateti,
Bruce C. C. Cowie,
Dong Qian,
Shuang Zhang,
Yuerui Lu,
Lan Fu,
Takashi Taniguchi,
Shaoming Huang,
Ying Chen,
Rodney S. Ruoff,
Lu Hua Li
Abstract:
Surface interaction is extremely important to both fundamental research and practical application. Physisorption can induce shape and structural distortion (i.e. conformational changes) in macromolecular and biomolecular adsorbates, but such phenomenon has rarely been observed on adsorbents. Here, we demonstrate theoretically and experimentally that atomically thin boron nitride (BN) nanosheets as…
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Surface interaction is extremely important to both fundamental research and practical application. Physisorption can induce shape and structural distortion (i.e. conformational changes) in macromolecular and biomolecular adsorbates, but such phenomenon has rarely been observed on adsorbents. Here, we demonstrate theoretically and experimentally that atomically thin boron nitride (BN) nanosheets as an adsorbent experience conformational changes upon surface adsorption of molecules, increasing adsorption energy and efficiency. The study not only provides new perspectives on the strong adsorption capability of BN nanosheets and many other two-dimensional nanomaterials but also opens up possibilities for many novel applications. For example, we demonstrate that BN nanosheets with the same surface area as bulk hBN particles are more effective in purification and sensing.
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Submitted 8 December, 2016;
originally announced December 2016.
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Molecular nitrogen acceptors in ZnO nanowires induced by nitrogen plasma annealing
Authors:
C. Ton-That,
L. Zhu,
M. N. Lockrey,
M. R. Phillips,
B. C. C. Cowie,
A. Tadich,
L. Thomsen,
S. Khachadorian,
S. Schlichting,
N. Jankowski,
A. Hoffmann
Abstract:
X-ray absorption near-edge spectroscopy (XANES), photoluminescence, cathodoluminescence and Raman spectroscopy have been used to investigate the chemical states of nitrogen dopants in ZnO nanowires. It is found that nitrogen exists in multiple states: NO, NZn and loosely bound N2 molecule. The work establishes a direct link between a donor-acceptor pair (DAP) emission at 3.232 eV and the concentra…
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X-ray absorption near-edge spectroscopy (XANES), photoluminescence, cathodoluminescence and Raman spectroscopy have been used to investigate the chemical states of nitrogen dopants in ZnO nanowires. It is found that nitrogen exists in multiple states: NO, NZn and loosely bound N2 molecule. The work establishes a direct link between a donor-acceptor pair (DAP) emission at 3.232 eV and the concentration of loosely bound N2. These results confirm that N2 at Zn site is a potential candidate for producing a shallow acceptor state in N-doped ZnO as theoretically predicted by Lambrecht and Boonchun [Phys. Rev. B 87, 195207 (2013)]. Additionally, shallow acceptor states arising from NO complexes have been ruled out in this study.
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Submitted 22 June, 2015;
originally announced June 2015.
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Observation of Active Sites for Oxygen Reduction Reaction on Nitrogen-doped Multilayer Graphene
Authors:
Tan Xing,
Yao Zheng,
Lu Hua Li,
Bruce C. C. Cowie,
Daniel Gunzelmann,
Shi Zhang Qiao,
Shaoming Huang,
Ying Chen
Abstract:
Active sites and catalytic mechanism of nitrogen-doped graphene in oxygen reduction reaction (ORR) have been extensively studied but are still inconclusive, partly due to the lack of an experimental method that can detect the active sites. It is proposed in this report that the active sites on nitrogen-doped graphene can be determined via the examination of its chemical composition change before a…
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Active sites and catalytic mechanism of nitrogen-doped graphene in oxygen reduction reaction (ORR) have been extensively studied but are still inconclusive, partly due to the lack of an experimental method that can detect the active sites. It is proposed in this report that the active sites on nitrogen-doped graphene can be determined via the examination of its chemical composition change before and after ORR. Synchrotron-based X-ray photoelectron spectroscopy analyses of three nitrogen-doped multilayer graphene samples reveal that oxygen reduction intermediate OH(ads) which should chemically attach to the active sites remains on the carbon atoms neighboring pyridinic nitrogen after ORR. In addition, a high amount of the OH(ads) attachment after ORR corresponds to a high catalytic efficiency and vice versa. These pinpoint that the carbon atoms close to pyridinic nitrogen are the main active sites among the different nitrogen doping configurations.
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Submitted 28 October, 2014;
originally announced October 2014.
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Adsorption-Induced Distortion of F_{16}CuPc on Cu(111) and Ag(111): An X-ray Standing Wave Study
Authors:
A. Gerlach,
F. Schreiber,
S. Sellner,
H. Dosch,
I. A. Vartanyants,
B. C. C. Cowie,
T. -L. Lee,
J. Zegenhagen
Abstract:
The adsorption geometry of perfluorinated copper-phthalocyanine molecules (F_{16}CuPc) on Cu(111) and Ag(111) is studied using X-ray standing waves. A detailed, element-specific analysis taking into account non-dipolar corrections to the photoelectron yield shows that on both surfaces the molecules adsorb in a lying down, but significantly distorted configuration. While on copper (silver) the ce…
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The adsorption geometry of perfluorinated copper-phthalocyanine molecules (F_{16}CuPc) on Cu(111) and Ag(111) is studied using X-ray standing waves. A detailed, element-specific analysis taking into account non-dipolar corrections to the photoelectron yield shows that on both surfaces the molecules adsorb in a lying down, but significantly distorted configuration. While on copper (silver) the central carbon rings reside 2.61 Angstroem (3.25 Angstroem) above the substrate, the outer fluorine atoms are located 0.27 Angstroem (0.20 Angstroem) further away from the surface. This non-planar adsorption structure is discussed in terms of the outer carbon atoms in F_{16}CuPc undergoing a partial rehybridization (sp^2 --> sp^3).
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Submitted 28 February, 2005;
originally announced February 2005.
