-
Surface termination control of charge transfer and band alignment across a semiconductor-crystalline oxide heterojunction
Authors:
M. Chrysler,
J. Gabel,
T. -L. Lee,
Z. Zhu,
T. C. Kaspar,
P. V. Sushko,
S. A. Chambers,
J. H. Ngai
Abstract:
Charge redistribution across heterojunctions has long been utilized to induce functional response in materials systems. Here we examine how the composition of the terminating surface affects charge transfer across a heterojunction consisting of Si and the crystalline complex oxide SrTiO3. Itinerant electrons in Si migrate across the interface toward the surface of SrTiO3 due to surface depletion.…
▽ More
Charge redistribution across heterojunctions has long been utilized to induce functional response in materials systems. Here we examine how the composition of the terminating surface affects charge transfer across a heterojunction consisting of Si and the crystalline complex oxide SrTiO3. Itinerant electrons in Si migrate across the interface toward the surface of SrTiO3 due to surface depletion. The electron transfer in turn creates an electric field across the interface that modifies the interfacial dipole associated with bonding between SrTiO3 and Si, leading to a change in the band alignment from type-II to type-III. By capping the SrTiO3 surface with ultra-thin layers of BaO, SrO or TiO2, charge transfer across the interface can be weakened or inhibited. Ab initio modeling implicates the adsorption of oxygen as driving surface depletion in SrTiO3. The electronic coupling between the surface and buried interface expands the functionality of semiconductor-crystalline oxide heterojunctions.
△ Less
Submitted 24 March, 2023;
originally announced March 2023.
-
Donor-acceptor co-adsorption ratio controls structure and electronic properties of two-dimensional alkali-organic networks on Ag(100)
Authors:
B. Sohail,
P. J. Blowey,
L. A. Rochford,
P. T. P. Ryan,
D. A. Duncan,
T. -L. Lee,
P. Starrs,
G. Costantini,
D. P. Woodruff,
R. J. Maurer
Abstract:
The results are presented of a detailed combined experimental and theoretical investigation of the influence of coadsorbed electron-donating alkali atoms and the prototypical electron acceptor molecule TCNQ (7,7,8,8-tetracyanoquinodimethane) on the Ag(100) surface. Several coadsorption phases were characterised by scanning tunnelling microscopy, low energy electron diffraction, and soft-X-ray phot…
▽ More
The results are presented of a detailed combined experimental and theoretical investigation of the influence of coadsorbed electron-donating alkali atoms and the prototypical electron acceptor molecule TCNQ (7,7,8,8-tetracyanoquinodimethane) on the Ag(100) surface. Several coadsorption phases were characterised by scanning tunnelling microscopy, low energy electron diffraction, and soft-X-ray photoelectron spectroscopy. Quantitative structural data were obtained using normal incidence X-ray standing wave (NIXSW) measurements and compared with the results of density functional theory (DFT) calculations using several different methods of dispersion correction. Generally good agreement between theory and experiment was achieved for the quantitative structures, albeit with prediction of the alkali atom heights being challenging for some methods. The adsorption structures depend sensitively on the interplay of molecule-metal charge transfer and long-range dispersion forces, which are controlled by the composition ratio between alkali atoms and TCNQ. The large difference in atomic size between K and Cs has negligible effects on stability, whereas increasing the ratio of K:TCNQ from 1:4 to 1:1 leads to a weakening of molecule-metal interaction strength in favour of stronger ionic bonds within the two-dimensional alkali-organic network. A strong dependence of the work function on the alkali donor-TCNQ acceptor co-adsorption ratio is predicted.
△ Less
Submitted 15 January, 2023; v1 submitted 23 August, 2022;
originally announced August 2022.
-
Tuning band alignment at a semiconductor-crystalline oxide heterojunction via electrostatic modulation of the interfacial dipole
Authors:
M. Chrysler,
J. Gabel,
T. -L. Lee,
A. N. Penn,
B. E. Matthews,
D. M. Kepaptsoglou,
Q. M. Ramasse,
J. R. Paudel,
R. K. Sah,
J. D. Grassi,
Z. Zhu,
A. X. Gray,
J. M. LeBeau,
S. R. Spurgeon,
S. A. Chambers,
P. V. Sushko,
J. H. Ngai
Abstract:
We demonstrate that the interfacial dipole associated with bonding across the SrTiO3/Si heterojunction can be tuned through space charge, thereby enabling the band alignment to be altered via doping. Oxygen impurities in Si act as donors that create space charge by transferring electrons across the interface into SrTiO3. The space charge induces an electric field that modifies the interfacial dipo…
▽ More
We demonstrate that the interfacial dipole associated with bonding across the SrTiO3/Si heterojunction can be tuned through space charge, thereby enabling the band alignment to be altered via doping. Oxygen impurities in Si act as donors that create space charge by transferring electrons across the interface into SrTiO3. The space charge induces an electric field that modifies the interfacial dipole, thereby tuning the band alignment from type-II to type-III. The transferred charge, resulting in built-in electric fields, and change in band alignment are manifested in electrical transport and hard x-ray photoelectron spectroscopy measurements. Ab initio models reveal the interplay between polarization and band offsets. We find that band offsets can be tuned by modulating the density of space charge across the interface. Functionalizing the interface dipole to enable electrostatic altering of band alignment opens new pathways to realize novel behavior in semiconducting heterojunctions.
△ Less
Submitted 27 May, 2021;
originally announced May 2021.
-
Hard X-ray photoemission spectroscopy of LaVO$_3$/SrTiO$_3$: Band alignment and electronic reconstruction
Authors:
M. Stübinger,
J. Gabel,
P. Scheiderer,
M. Zapf,
M. Schmitt,
P. Schütz,
B. Leikert,
J. Küspert,
M. Kamp,
P. K. Thakur,
T. -L. Lee,
P. Potapov,
A. Lubk,
B. Büchner,
M. Sing,
R. Claessen
Abstract:
The heterostructure consisting of the Mott insulator LaVO$_3$ and the band insulator SrTiO$_3$ is considered a promising candidate for future photovoltaic applications. Not only does the (direct) excitation gap of LaVO$_3$ match well the solar spectrum, but its correlated nature and predicted built-in potential, owing to the non-polar/polar interface when integrated with SrTiO$_3$, also offer rema…
▽ More
The heterostructure consisting of the Mott insulator LaVO$_3$ and the band insulator SrTiO$_3$ is considered a promising candidate for future photovoltaic applications. Not only does the (direct) excitation gap of LaVO$_3$ match well the solar spectrum, but its correlated nature and predicted built-in potential, owing to the non-polar/polar interface when integrated with SrTiO$_3$, also offer remarkable advantages over conventional solar cells. However, experimental data beyond the observation of a thickness-dependent metal-insulator transition is scarce and a profound, microscopic understanding of the electronic properties is still lacking. By means of soft and hard X-ray photoemission spectroscopy as well as resistivity and Hall effect measurements we study the electrical properties, band bending, and band alignment of LaVO$_3$/SrTiO$_3$ heterostructures. We find a critical LaVO$_3$ thickness of five unit cells, confinement of the conducting electrons to exclusively Ti 3$d$ states at the interface, and a potential gradient in the film. From these findings we conclude on electronic reconstruction as the driving mechanism for the formation of the metallic interface in LaVO$_3$/SrTiO$_3$.
△ Less
Submitted 26 May, 2021;
originally announced May 2021.
-
Proximity-induced ferromagnetism and chemical reactivity in few layers VSe2 heterostructures
Authors:
G. Vinai,
C. Bigi,
A. Rajan,
M. D. Watson,
T. -L. Lee,
F. Mazzola,
S. Modesti,
S. Barua,
M. Ciomaga Hatnean,
G. Balakrishnan,
P. D. C. King,
P. Torelli,
G. Rossi,
G. Panaccione
Abstract:
Among Transition-Metal Dichalcogenides, mono and few-layers thick VSe2 has gained much recent attention following claims of intrinsic room-temperature ferromagnetism in this system, which have nonetheless proved controversial. Here, we address the magnetic and chemical properties of Fe/VSe2 heterostructure by combining element sensitive absorption spectroscopy and photoemission spectroscopy. Our x…
▽ More
Among Transition-Metal Dichalcogenides, mono and few-layers thick VSe2 has gained much recent attention following claims of intrinsic room-temperature ferromagnetism in this system, which have nonetheless proved controversial. Here, we address the magnetic and chemical properties of Fe/VSe2 heterostructure by combining element sensitive absorption spectroscopy and photoemission spectroscopy. Our x-ray magnetic circular dichroism results confirm recent findings that both native mono/few-layer and bulk VSe2 do not show any signature of an intrinsic ferromagnetic ordering. Nonetheless, we find that ferromagnetism can be induced, even at room temperature, after coupling with a Fe thin film layer, with antiparallel alignment of the moment on the V with respect to Fe. We further consider the chemical reactivity at the Fe/VSe2 interface and its relation with interfacial magnetic coupling.
△ Less
Submitted 4 September, 2019;
originally announced September 2019.
-
Electronic structure of a graphene-like artificial crystal of $NdNiO_3$
Authors:
Arian Arab,
Xiaoran Liu,
O. Köksal,
W. Yang,
R. U. Chandrasena,
S. Middey,
M. Kareev,
S. Kumar,
M. -A. Husanu,
Z. Yang,
L. Gu,
V. N. Strocov,
T. -L. Lee,
J. Minár,
R. Pentcheva,
J. Chakhalian,
A. X. Gray
Abstract:
Artificial complex-oxide heterostructures containing ultrathin buried layers grown along the pseudocubic [111] direction have been predicted to host a plethora of exotic quantum states arising from the graphene-like lattice geometry and the interplay between strong electronic correlations and band topology. To date, however, electronic-structural investigations of such atomic layers remain an imme…
▽ More
Artificial complex-oxide heterostructures containing ultrathin buried layers grown along the pseudocubic [111] direction have been predicted to host a plethora of exotic quantum states arising from the graphene-like lattice geometry and the interplay between strong electronic correlations and band topology. To date, however, electronic-structural investigations of such atomic layers remain an immense challenge due to the shortcomings of conventional surface-sensitive probes, with typical information depths of a few Angstroms. Here, we use a combination of bulk-sensitive soft x-ray angle-resolved photoelectron spectroscopy (SX-ARPES), hard x-ray photoelectron spectroscopy (HAXPES) and state-of-the-art first-principles calculations to demonstrate a direct and robust method for extracting momentum-resolved and angle-integrated valence-band electronic structure of an ultrathin buckled graphene-like layer of $NdNiO_3$ confined between two 4-unit cell-thick layers of insulating $LaAlO_3$. The momentum-resolved dispersion of the buried Ni d states near the Fermi level obtained via SX-ARPES is in excellent agreement with the first-principles calculations and establishes the realization of an antiferro-orbital order in this artificial lattice. The HAXPES measurements reveal the presence of a valence-band (VB) bandgap of 265 meV. Our findings open a promising avenue for designing and investigating quantum states of matter with exotic order and topology in a few buried layers.
△ Less
Submitted 27 May, 2019;
originally announced May 2019.
-
Probing spin correlations using angle resolved photoemission in a coupled metallic/Mott insulator system
Authors:
V. Sunko,
F. Mazzola,
S. Kitamura,
S. Khim,
P. Kushwaha,
O. J. Clark,
M. Watson,
I. Markovic,
D. Biswas,
L. Pourovskii,
T. K. Kim,
T. -L. Lee,
P. K. Thakur,
H. Rosner,
A. Georges,
R. Moessner,
T. Oka,
A. P. Mackenzie,
P. D. C. King
Abstract:
A nearly free electron metal and a Mott insulating state can be thought of as opposite ends of possibilities for the motion of electrons in a solid. In the magnetic oxide metal PdCrO$_{2}$, these two coexist as alternating layers. Using angle resolved photoemission, we surprisingly find sharp band-like features in the one-electron removal spectral function of the correlated subsystem. We show that…
▽ More
A nearly free electron metal and a Mott insulating state can be thought of as opposite ends of possibilities for the motion of electrons in a solid. In the magnetic oxide metal PdCrO$_{2}$, these two coexist as alternating layers. Using angle resolved photoemission, we surprisingly find sharp band-like features in the one-electron removal spectral function of the correlated subsystem. We show that these arise because a hole created in the Mott layer moves to and propagates in the metallic layer while retaining memory of the Mott layer's magnetism. This picture is quantitatively supported by a strong coupling analysis capturing the physics of PdCrO$_{2}$ in terms of a Kondo lattice Hamiltonian. Our findings open new routes to use the non-magnetic probe of photoemission to gain insights into the spin-susceptibility of correlated electron systems.
△ Less
Submitted 20 February, 2020; v1 submitted 24 September, 2018;
originally announced September 2018.
-
Surfactant-Mediated Epitaxial Growth of Single-Layer Graphene in an Unconventional Orientation on SiC
Authors:
F. C. Bocquet,
Y. -R. Lin,
M. Franke,
N. Samiseresht,
S. Parhizkar,
S. Soubatch,
T. -L. Lee,
C. Kumpf,
F. S. Tautz
Abstract:
We report the use of a surfactant molecule during the epitaxy of graphene on SiC(0001) that leads to the growth in an unconventional orientation, namely $R0^\circ$ rotation with respect to the SiC lattice. It yields a very high-quality single-layer graphene with a uniform orientation with respect to the substrate, on the wafer scale. We find an increased quality and homogeneity compared to the app…
▽ More
We report the use of a surfactant molecule during the epitaxy of graphene on SiC(0001) that leads to the growth in an unconventional orientation, namely $R0^\circ$ rotation with respect to the SiC lattice. It yields a very high-quality single-layer graphene with a uniform orientation with respect to the substrate, on the wafer scale. We find an increased quality and homogeneity compared to the approach based on the use of a pre-oriented template to induce the unconventional orientation. Using spot profile analysis low energy electron diffraction, angle-resolved photoelectron spectroscopy, and the normal incidence x-ray standing wave technique, we assess the crystalline quality and coverage of the graphene layer. Combined with the presence of a covalently-bound graphene layer in the conventional orientation underneath, our surfactant-mediated growth offers an ideal platform to prepare epitaxial twisted bilayer graphene via intercalation.
△ Less
Submitted 7 September, 2020; v1 submitted 21 September, 2018;
originally announced September 2018.
-
Layer-resolved band bending at the n-SrTiO3(001)/p-Ge(001) interface
Authors:
Y. Du,
P. V. Sushko,
S. R. Spurgeon,
M. E. Bowden,
J. M. Ablett,
T. -L. Lee,
N. F. Quackenbush,
J. C. Woicik,
S. A. Chambers
Abstract:
The electronic properties of epitaxial heterojunctions consisting of the prototypical perovskite oxide semiconductor,n-SrTiO3 and the high-mobility Group IV semiconductor p-Ge have been investigated. Hard x-ray photoelectron spectroscopy with a new method of analysis has been used to determine band alignment while at the same time quantifying a large built-in potential found to be present within t…
▽ More
The electronic properties of epitaxial heterojunctions consisting of the prototypical perovskite oxide semiconductor,n-SrTiO3 and the high-mobility Group IV semiconductor p-Ge have been investigated. Hard x-ray photoelectron spectroscopy with a new method of analysis has been used to determine band alignment while at the same time quantifying a large built-in potential found to be present within the Ge. Accordingly, the built-in potential within the Ge has been mapped in a layer-resolved fashion. Electron transfer from donors in the n-SrTiO3 to the p-Ge creates a space-charge region in the Ge resulting in downward band bending which spans most of the Ge gap. This strong downward band bending facilitates visible-light, photo-generated electron transfer from Ge to STO, favorable to drive the hydrogen evolution reaction associated with water splitting. Ti 2p and Sr 3d core-level line shapes reveal that the STO bands are flat despite the space-charge layer therein. Inclusion of the effect of Ge band bending on band alignment is significant, amounting to a ~0.4 eV reduction in valence band offset compared to the value resulting from using spectra averaged over all layers. Density functional theory allows candidate interface structural models deduced from scanning transmission electron microscopy images to be simulated and structurally optimized. These structures are used to generate multi-slice simulations that reproduce the experimental images quite well. The calculated band offsets for these structures are in good agreement with experiment.
△ Less
Submitted 13 August, 2018;
originally announced August 2018.
-
Low-Energy Excitations in Quantum Spin-Liquids Identified by Optical Spectroscopy
Authors:
A. Pustogow,
Y. Saito,
E. Zhukova,
B. Gorshunov,
R. Kato,
T. -H. Lee,
S. Fratini,
V. Dobrosavljević,
M. Dressel
Abstract:
The electrodynamic response of organic spin liquids with highly-frustrated triangular lattices has been measured in a wide energy range. While the overall optical spectra of these Mott insulators are governed by transitions between the Hubbard bands, distinct in-gap excitations can be identified at low temperatures and frequencies which we attribute to the quantum spin liquid state. For the strong…
▽ More
The electrodynamic response of organic spin liquids with highly-frustrated triangular lattices has been measured in a wide energy range. While the overall optical spectra of these Mott insulators are governed by transitions between the Hubbard bands, distinct in-gap excitations can be identified at low temperatures and frequencies which we attribute to the quantum spin liquid state. For the strongly correlated $β^{\prime}$-EtMe$_3$\-Sb\-[Pd(dmit)$_2$]$_2$, we discover enhanced conductivity below $175~{\rm cm}^{-1}$, comparable to the energy of the magnetic coupling $J\approx 250$ K. For $ω\rightarrow 0$ these low-frequency excitations vanish faster than the charge-carrier response subject to Mott-Hubbard correlations, resulting in a dome-shape band peaked at 100~\cm. Possible relations to spinons, magnons and disorder are discussed.
△ Less
Submitted 7 August, 2018; v1 submitted 5 March, 2018;
originally announced March 2018.
-
Electronic structure of the candidate 2D Dirac semimetal SrMnSb2: a combined experimental and theoretical study
Authors:
S. V. Ramankutty,
J. Henke,
A. Schiphorst,
R. Nutakki,
S. Bron,
G. Araizi-Kanoutas,
S. K. Mishra,
Lei Li,
Y. K. Huang,
T. K. Kim,
M. Hoesch,
C. Schlueter,
T. -L. Lee,
A. de Visser,
Zhicheng Zhong,
Jasper van Wezel,
E. van Heumen,
M. S. Golden
Abstract:
SrMnSb$_2$ is suggested to be a magnetic topological semimetal. It contains square, 2D Sb planes with non-symmorphic crystal symmetries that could protect band crossings, offering the possibility of a quasi-2D, robust Dirac semi-metal in the form of a stable, bulk (3D) crystal. Here, we report a combined and comprehensive experimental and theoretical investigation of the electronic structure of Sr…
▽ More
SrMnSb$_2$ is suggested to be a magnetic topological semimetal. It contains square, 2D Sb planes with non-symmorphic crystal symmetries that could protect band crossings, offering the possibility of a quasi-2D, robust Dirac semi-metal in the form of a stable, bulk (3D) crystal. Here, we report a combined and comprehensive experimental and theoretical investigation of the electronic structure of SrMnSb$_2$, including the first ARPES data on this compound. SrMnSb$_2$ possesses a small Fermi surface originating from highly 2D, sharp and linearly dispersing bands (the Y-states) around the (0,$π$/a)-point in $k$-space. The ARPES Fermi surface agrees perfectly with that from bulk-sensitive Shubnikov de Haas data from the same crystals, proving the Y$-$states to be responsible for electrical conductivity in SrMnSb$_2$. DFT and tight binding (TB) methods are used to model the electronic states, and both show good agreement with the ARPES data. Despite the great promise of the latter, both theory approaches show the Y-states to be gapped above E$_F$, suggesting trivial topology. Subsequent analysis within both theory approaches shows the Berry phase to be zero, indicating the non-topological character of the transport in SrMnSb$_2$, a conclusion backed up by the analysis of the quantum oscillation data from our crystals.
△ Less
Submitted 21 January, 2018; v1 submitted 20 November, 2017;
originally announced November 2017.
-
Quantum Spin Liquids Unveil the Genuine Mott State
Authors:
A. Pustogow,
M. Bories,
A. Löhle,
R. Rösslhuber,
E. Zhukova,
B. Gorshunov,
S. Tomić,
J. A. Schlueter,
R. Hübner,
T. Hiramatsu,
Y. Yoshida,
G. Saito,
R. Kato,
T. -H. Lee,
V. Dobrosavljević,
S. Fratini,
M. Dressel
Abstract:
The Widom line identifies the locus in the phase diagram where a supercritical gas crosses over from gas-like to a more liquid-like behavior. A similar transition exists in correlated electron liquids, where the interplay of Coulomb repulsion, bandwidth and temperature triggers between the Mott insulating state and an incoherent conduction regime. Here we explore the electrodynamic response of thr…
▽ More
The Widom line identifies the locus in the phase diagram where a supercritical gas crosses over from gas-like to a more liquid-like behavior. A similar transition exists in correlated electron liquids, where the interplay of Coulomb repulsion, bandwidth and temperature triggers between the Mott insulating state and an incoherent conduction regime. Here we explore the electrodynamic response of three organic quantum spin liquids with different degrees of effective correlation, where the absence of magnetic order enables unique insight into the nature of the genuine Mott state down to the most relevant low-temperature region. Combining optical spectroscopy with pressure-dependent dc transport and theoretical calculations, we succeeded to construct a phase diagram valid for all Mott insulators on a quantitative scale. In the vicinity of the low-temperature phase boundary, we discover metallic fluctuations within the Mott gap, exhibiting enhanced absorption upon cooling that is not present in antiferromagnetic Mott insulators. Our findings reveal the phase coexistence region and Pomeranchuk-like anomaly of the Mott transition, previously predicted but never observed.
△ Less
Submitted 19 October, 2017;
originally announced October 2017.
-
Microscopic origin of the mobility enhancement at a spinel/perovskite oxide heterointerface revealed by photoemission spectroscopy
Authors:
P. Schütz,
D. V. Christensen,
V. Borisov,
F. Pfaff,
P. Scheiderer,
L. Dudy,
M. Zapf,
J. Gabel,
Y. Z. Chen,
N. Pryds,
V. A. Rogalev,
V. N. Strocov,
C. Schlueter,
T. -L. Lee,
H. O. Jeschke,
R. Valentí,
M. Sing,
R. Claessen
Abstract:
The spinel/perovskite heterointerface $γ$-Al$_2$O$_3$/SrTiO$_3$ hosts a two-dimensional electron system (2DES) with electron mobilities exceeding those in its all-perovskite counterpart LaAlO$_3$/SrTiO$_3$ by more than an order of magnitude despite the abundance of oxygen vacancies which act as electron donors as well as scattering sites. By means of resonant soft x-ray photoemission spectroscopy…
▽ More
The spinel/perovskite heterointerface $γ$-Al$_2$O$_3$/SrTiO$_3$ hosts a two-dimensional electron system (2DES) with electron mobilities exceeding those in its all-perovskite counterpart LaAlO$_3$/SrTiO$_3$ by more than an order of magnitude despite the abundance of oxygen vacancies which act as electron donors as well as scattering sites. By means of resonant soft x-ray photoemission spectroscopy and \textit{ab initio} calculations we reveal the presence of a sharply localized type of oxygen vacancies at the very interface due to the local breaking of the perovskite symmetry. We explain the extraordinarily high mobilities by reduced scattering resulting from the preferential formation of interfacial oxygen vacancies and spatial separation of the resulting 2DES in deeper SrTiO$_3$ layers. Our findings comply with transport studies and pave the way towards defect engineering at interfaces of oxides with different crystal structures.
△ Less
Submitted 16 October, 2017;
originally announced October 2017.
-
Tuning a Strain-Induced Orbital Selective Mott Transition in Epitaxial VO$_2$
Authors:
Shantanu Mukherjee,
N. F. Quackenbush,
H. Paik,
C. Schlueter,
T. -L. Lee,
D. G. Schlom,
L. F. J. Piper,
Wei-Cheng Lee
Abstract:
We present evidence of strain-induced modulation of electron correlation effects and increased orbital anisotropy in the rutile phase of epitaxial VO$_2$/TiO$_2$ films from hard x-ray photoelectron spectroscopy and soft V L-edge x-ray absorption spectroscopy, respectively. By using the U(1) slave spin formalism, we further argue that the observed anisotropic correlation effects can be understood b…
▽ More
We present evidence of strain-induced modulation of electron correlation effects and increased orbital anisotropy in the rutile phase of epitaxial VO$_2$/TiO$_2$ films from hard x-ray photoelectron spectroscopy and soft V L-edge x-ray absorption spectroscopy, respectively. By using the U(1) slave spin formalism, we further argue that the observed anisotropic correlation effects can be understood by a model of orbital selective Mott transition at a filling that is non-integer, but close to the half-filling. Because the overlaps of wave functions between $d$ orbitals are modified by the strain, orbitally-dependent renormalizations of the bandwidths and the crystal fields occur with the application of strain. These renormalizations generally result in different occupation numbers in different orbitals. We find that if the system has a non-integer filling number near the half-filling such as for VO$_2$, certain orbitals could reach an occupation number closer to half-filling under the strain, resulting in a strong reduction in the quasiparticle weight $Z_α$ of that orbital. Moreover, an orbital selective Mott transition, defined as the case with $Z_α = 0$ in some, but not all orbitals, could be accessed by epitaxial strain-engineering of correlated electron systems.
△ Less
Submitted 8 March, 2016; v1 submitted 1 March, 2016;
originally announced March 2016.
-
Approaching ideal graphene: The structure of hydrogen-intercalated graphene on 6H-SiC(0001)
Authors:
J. Sforzini,
L. Nemec,
T. Denig,
B. Stadtmüller,
T. -L. Lee,
C. Kumpf,
S. Soubatch,
U. Starke,
P. Rinke,
V. Blum,
F. C. Bocquet,
F. S. Tautz
Abstract:
We measure the adsorption height of hydrogen-intercalated quasi-free-standing monolayer graphene on the (0001) face of 6H silicon carbide by the normal incidence x-ray standing wave technique. A density functional calculation for the full ($6 \sqrt{3} \times 6 \sqrt{3}$)-R30$^\circ$ unit cell, based on a van der Waals corrected exchange correlation functional, finds a purely physisorptive adsorpti…
▽ More
We measure the adsorption height of hydrogen-intercalated quasi-free-standing monolayer graphene on the (0001) face of 6H silicon carbide by the normal incidence x-ray standing wave technique. A density functional calculation for the full ($6 \sqrt{3} \times 6 \sqrt{3}$)-R30$^\circ$ unit cell, based on a van der Waals corrected exchange correlation functional, finds a purely physisorptive adsorption height in excellent agreement with experiments, a very low buckling of the graphene layer, a very homogeneous electron density at the interface and the lowest known adsorption energy per atom for graphene on any substrate. A structural comparison to other graphenes suggests that hydrogen intercalated graphene on 6H-SiC(0001) approaches ideal graphene.
△ Less
Submitted 18 November, 2014;
originally announced November 2014.
-
Adsorption-Induced Distortion of F_{16}CuPc on Cu(111) and Ag(111): An X-ray Standing Wave Study
Authors:
A. Gerlach,
F. Schreiber,
S. Sellner,
H. Dosch,
I. A. Vartanyants,
B. C. C. Cowie,
T. -L. Lee,
J. Zegenhagen
Abstract:
The adsorption geometry of perfluorinated copper-phthalocyanine molecules (F_{16}CuPc) on Cu(111) and Ag(111) is studied using X-ray standing waves. A detailed, element-specific analysis taking into account non-dipolar corrections to the photoelectron yield shows that on both surfaces the molecules adsorb in a lying down, but significantly distorted configuration. While on copper (silver) the ce…
▽ More
The adsorption geometry of perfluorinated copper-phthalocyanine molecules (F_{16}CuPc) on Cu(111) and Ag(111) is studied using X-ray standing waves. A detailed, element-specific analysis taking into account non-dipolar corrections to the photoelectron yield shows that on both surfaces the molecules adsorb in a lying down, but significantly distorted configuration. While on copper (silver) the central carbon rings reside 2.61 Angstroem (3.25 Angstroem) above the substrate, the outer fluorine atoms are located 0.27 Angstroem (0.20 Angstroem) further away from the surface. This non-planar adsorption structure is discussed in terms of the outer carbon atoms in F_{16}CuPc undergoing a partial rehybridization (sp^2 --> sp^3).
△ Less
Submitted 28 February, 2005;
originally announced February 2005.
-
Growth of c-oriented MgB2 thin films by Pulsed Laser Deposition: structural characterization and electronic anisotropy
Authors:
C. Ferdeghini,
V. Ferrando,
G. Grassano,
W. Ramadan,
E. Bellingeri,
V. Braccini,
D. Marre',
P. Manfrinetti,
A. Palenzona,
F. Borgatti,
R. Felici,
T. -L. Lee
Abstract:
MgB2 thin films were deposited using Pulsed Laser Deposition (PLD) and ex-situ annealing in Mg atmosphere. The films presented critical temperatures up to 36K and turned out to be preferentially c-oriented both on Al2O3 (r-cut) and MgO(100) substrates. Synchrotron analyses gave also some indications of in plane texturing. The films exhibit very fine grain size (1200angstromin the basal plane and…
▽ More
MgB2 thin films were deposited using Pulsed Laser Deposition (PLD) and ex-situ annealing in Mg atmosphere. The films presented critical temperatures up to 36K and turned out to be preferentially c-oriented both on Al2O3 (r-cut) and MgO(100) substrates. Synchrotron analyses gave also some indications of in plane texturing. The films exhibit very fine grain size (1200angstromin the basal plane and 100angstrom along c-axis) but the general resistivity behavior and the remarkable extension of the irreversible region confirm that the grains boundaries are not barriers for supercurrents. Upper critical field measurements with the magnetic field perpendicular and parallel with respect to the film surface evidenced a field anisotropy ratio of 1.8. The Hc2 values are considerably higher with respect to the bulk ones, namely when the field lies in the basal plane, and the field-temperature phase diagram for the two magnetic field orientations suggest the possibility of strongly enhancing the pinning region by means of texturing.
△ Less
Submitted 2 July, 2001;
originally announced July 2001.
