Showing 1–49 of 49 results for author: Djurabekova, F

Self-assembling of multilayered polymorphs with ion beams

Authors: Alexander Azarov, Cristian Radu, Augustinas Galeckas, Ionel Florinel Mercioniu, Adrian Cernescu, Vishnukanthan Venkatachalapathy, Edouard Monakhov, Flyura Djurabekova, Corneliu Ghica, Junlei Zhao, Andrej Kuznetsov

Abstract: Polymorphism contributes to the diversity of nature, so that even materials having identical chemical compositions exhibit variations in properties because of different lattice symmetries. Thus, if stacked together into multilayers, polymorphs may work as an alternative approach to the sequential deposition of layers with different chemical compositions. However, selective polymorph crystallizatio… ▽ More Polymorphism contributes to the diversity of nature, so that even materials having identical chemical compositions exhibit variations in properties because of different lattice symmetries. Thus, if stacked together into multilayers, polymorphs may work as an alternative approach to the sequential deposition of layers with different chemical compositions. However, selective polymorph crystallization during conventional thin film synthesis is not trivial; e.g. opting for step-like changes of temperature and/or pressure correlated with switching from one polymorph to another during synthesis is tricky, since it may cause degradation of the structural quality. In the present work, applying the disorder-induced ordering approach we fabricated such multilayered polymorph structures using ion beams. We show that during ion irradiation of gallium oxide, the dynamic annealing of disorder may be tuned towards self-assembling of several polymorph interfaces, consistently with theoretical modelling. Specifically, we demonstrated multilayers with two polymorph interface repetitions obtained in one ion beam assisted fabrication step. Importantly, single crystal structure of the polymorphs was maintained in between interfaces exhibiting repeatable crystallographic relationships, correlating with optical cross-sectional maps. This data paves the way for enhancing functionalities in materials with not previously thought capabilities of ion beam technology. △ Less

Submitted 30 April, 2024; originally announced April 2024.

Comments: 9 pages, 4 figure, under review, private communication for supplementary notes

Ultrahigh Stability of O-Sublattice in $β$-Ga$_2$O$_3$

Authors: Ru He, Junlei Zhao, Jesper Byggmästar, Huan He, Flyura Djurabekova

Abstract: Recently reported remarkably high radiation tolerance of $γ$/$β$-Ga$_2$O$_3$ double-polymorphic structure brings this ultrawide bandgap semiconductor to the frontiers of power electronics applications that are able to operate in challenging environments. Understanding the mechanism of radiation tolerance is crucial for further material modification and tailoring of the desired properties. In this… ▽ More Recently reported remarkably high radiation tolerance of $γ$/$β$-Ga$_2$O$_3$ double-polymorphic structure brings this ultrawide bandgap semiconductor to the frontiers of power electronics applications that are able to operate in challenging environments. Understanding the mechanism of radiation tolerance is crucial for further material modification and tailoring of the desired properties. In this study, we employ machine-learning-enhanced atomistic simulations to assess the stability of both the gallium (Ga) and oxygen (O) sublattices under various levels of damage. Our study uncovers the remarkable resilience and stability of the O-sublattice, attributing this property to the strong tendency of recovery of the O defects, especially within the stronger disordered regions. Interestingly, we observe the opposite behavior of the Ga defects that display enhanced stability in the same regions of increased disorder. Moreover, we observe that highly defective $β$-Ga$_2$O$_3$ is able to transform into $γ$-Ga$_2$O$_3$ upon annealing due to preserved lattice organization of the O-sublattice. This result clearly manifests that the ultrahigh stability of the O-sublattice provides the backbone for the exceptional radiation tolerance of the $γ$/$β$ double-polymorphic structure. These computational insights closely align with experimental observations, opening avenues for further exploration of polymorphism in Ga$_2$O$_3$ and potentially in analogous polymorphic families spanning a broad range of diverse materials of complex polymorphic nature. △ Less

Submitted 18 April, 2024; v1 submitted 16 April, 2024; originally announced April 2024.

Simulating vacuum arc initiation by coupling emission, heating and plasma processes

Authors: Roni Koitermaa, Andreas Kyritsakis, Tauno Tiirats, Veronika Zadin, Flyura Djurabekova

Abstract: Vacuum arcing poses significant challenges for high-field vacuum devices, underscoring the importance of understanding it for their efficient design. A detailed description of the physical mechanisms involved in vacuum arcing is yet to be achieved, despite extensive research. In this work, we further develop the modelling of the physical processes involved in the initiation of vacuum arcing, start… ▽ More Vacuum arcing poses significant challenges for high-field vacuum devices, underscoring the importance of understanding it for their efficient design. A detailed description of the physical mechanisms involved in vacuum arcing is yet to be achieved, despite extensive research. In this work, we further develop the modelling of the physical processes involved in the initiation of vacuum arcing, starting from field emission and leading to plasma onset. Our model concurrently combines particle-in-cell with Monte Carlo collisions (PIC-MCC) simulations of plasma processes with finite element-based calculations of electron emission and the associated thermal effects. Including the processes of evaporation, impact ionization and direct field ionization allowed us to observe the dynamics of plasma buildup from an initially cold cathode surface. We simulated a static nanotip at various local fields to study the thresholds for thermal runaway and plasma initiation, identifying the significance of various interactions. We found that direct field ionization of neutrals has a significant effect at high fields on the order of 10 GV/m. Furthermore, we find that cathode surface interactions such as evaporation, sputtering and bombardment heating play a major role in the initiation of vacuum arcs. Consequently, the inclusion of these interactions in vacuum arc simulations is imperative. △ Less

Submitted 13 February, 2024; originally announced February 2024.

Comments: 17 pages, 14 figures

Generalized Algorithm for Recognition of Complex Point Defects in Large-Scale β-$\rm {Ga_2O_3}$

Authors: Mengzhi Yan, Junlei Zhao, Flyura Djurabekova, Zongwei Xu

Abstract: The electrical and optical properties of semiconductor materials are profoundly influenced by the atomic configurations and concentrations of intrinsic defects. This influence is particularly significant in the case of $β$-$\rm {Ga_2O_3}$, a vital ultrawide bandgap semiconductor characterized by highly complex intrinsic defect configurations. Despite its importance, there is a notable absence of a… ▽ More The electrical and optical properties of semiconductor materials are profoundly influenced by the atomic configurations and concentrations of intrinsic defects. This influence is particularly significant in the case of $β$-$\rm {Ga_2O_3}$, a vital ultrawide bandgap semiconductor characterized by highly complex intrinsic defect configurations. Despite its importance, there is a notable absence of an accurate method to recognize these defects in large-scale atomistic computational modeling. In this work, we present an effective algorithm designed explicitly for identifying various intrinsic point defects in the $β$-$\rm {Ga_2O_3}$ lattice. By integrating particle swarm optimization and hierarchical clustering methods, our algorithm attains a recognition accuracy exceeding 95% for discrete point defect configurations. Furthermore, we have developed an efficient technique for randomly generating diverse intrinsic defects in large-scale $β$-$\rm {Ga_2O_3}$ systems. This approach facilitates the construction of an extensive atomic database, crucially instrumental in validating the recognition algorithm through a substantial number of statistical analyses. Finally, the recognition algorithm is applied to a molecular dynamics simulation, accurately describing the evolution of the point defects during high-temperature annealing. Our work provides a useful tool for investigating the complex dynamical evolution of intrinsic point defects in $β$-$\rm {Ga_2O_3}$, and moreover, holds promise for understanding similar material systems, such as $\rm {Al_2O_3}$, $\rm {In_2O_3}$, and $\rm {Sb_2O_3}$. △ Less

Submitted 7 February, 2024; v1 submitted 29 January, 2024; originally announced January 2024.

Comments: 11 pages, 7 figures

Threshold displacement energy map of Frenkel pair generation in $\rm Ga_2O_3$ from machine-learning-driven molecular dynamics simulations

Authors: Huan He, Junlei Zhao, Jesper Byggmästar, Ru He, Kai Nordlund, Chaohui He, Flyura Djurabekova

Abstract: $β$ phase gallium oxide ($β$-$\rm Ga_2O_3… ▽ More $β$ phase gallium oxide ($β$-$\rm Ga_2O_3$) demonstrates tremendous potential for electronics applications and offers promising prospects for integration into future space systems with the necessity of high radiation resistance. Therefore, a comprehensive understanding of the threshold displacement energy (TDE) and the radiation-induced formation of Frenkel pairs (FPs) in this material is vital but has not yet been thoroughly studied. In this work, we performed over 5,000 molecular dynamics simulations using our machine-learning potentials to determine the TDE and investigate the formation of FPs. The average TDEs for the two Ga sites, Ga1 (tetrahedral site) and Ga2 (octahedral site), are 22.9 and 20.0 eV, respectively. While the average TDEs for the three O sites are nearly uniform, ranging from 17.0 to 17.4 eV. The generated TDE maps reveal significant differences in displacement behavior between these five atomic sites. Our developed defect identification methods successfully categorize various types of FPs in this material, with more than ten types of Ga FPs being produced during our simulations. O atoms are found to form two main types of FPs and the O split interstitial site on O1 site is most common. Finally, the recombination behavior and barriers of Ga and O FPs indicate that the O FP has a higher possibility of recovery upon annealing. Our findings provide important insights into the studies of radiation damage and defects in $\rm Ga_2O_3$ and can contribute to the design and development of $\rm Ga_2O_3$-based devices △ Less

Submitted 28 February, 2024; v1 submitted 25 January, 2024; originally announced January 2024.

Crystallization Instead of Amorphization in Collision Cascades in Gallium Oxide

Authors: Junlei Zhao, Javier García Fernández, Alexander Azarov, Ru He, Øystein Prytz, Kai Nordlund, Mengyuan Hua, Flyura Djurabekova, Andrej Kuznetsov

Abstract: Disordering of solids typically leads to amorphization, but polymorph transitions, facilitated by favorable atomic rearrangements, may temporarily help to maintain long-range periodicity in the solid state. In far-from-equilibrium situations, such as atomic collision cascades, these rearrangements may not necessarily follow a thermodynamically gainful path, but may be kinetically limited. In this… ▽ More Disordering of solids typically leads to amorphization, but polymorph transitions, facilitated by favorable atomic rearrangements, may temporarily help to maintain long-range periodicity in the solid state. In far-from-equilibrium situations, such as atomic collision cascades, these rearrangements may not necessarily follow a thermodynamically gainful path, but may be kinetically limited. In this Letter, we focused on such crystallization instead of amorphization in collision cascades in gallium oxide (\ce{Ga2O3}). We determined the disorder threshold for irreversible $β$-to-$γ$ polymorph transition and explained why it results in elevating energy to that of the $γ$-polymorph, which exhibits the highest polymorph energy in the system below the amorphous state. Specifically, we demonstrate that upon reaching the disorder transition threshold, the \ce{Ga}-sublattice kinetically favors transitioning to the $γ$-like configuration, requiring significantly less migration for \ce{Ga} atoms to reach the lattice sites during post-cascade processes. As such, our data provide a consistent explanation of this remarkable phenomenon and can serve as a toolbox for predictive multi-polymorph fabrication. △ Less

Submitted 7 March, 2024; v1 submitted 15 January, 2024; originally announced January 2024.

Comments: 6 pages, 4 figures, under review

Analysis of lattice locations of deuterium in tungsten and its application for predicting deuterium trapping conditions

Authors: Xin Jin, Flyura Djurabekova, Etienne A. Hodille, Sabina Markelj, Kai Nordlund

Abstract: Retention of hydrogen isotopes (protium, deuterium and tritium) in tungsten is one of the most severe issues in design of fusion power plants, since significant trapping of tritium may cause exceeding radioactivity safety limits in future reactors. Hydrogen isotopes in tungsten can be detected using the nuclear reaction analysis method in channeling mode (NRA/C). However, the information hidden wi… ▽ More Retention of hydrogen isotopes (protium, deuterium and tritium) in tungsten is one of the most severe issues in design of fusion power plants, since significant trapping of tritium may cause exceeding radioactivity safety limits in future reactors. Hydrogen isotopes in tungsten can be detected using the nuclear reaction analysis method in channeling mode (NRA/C). However, the information hidden within the experimental spectra is subject to interpretation. In this work, we propose the methodology to interpret the response of the experimental NRA/C spectra to the specific lattice locations of deuterium by simulations of the NRA/C spectra from atomic structures of deuterium lattice locations as obtained from the first principles calculations. We show that trapping conditions, i.e., states of local crystal structures retaining deuterium, affect the lattice locations of deuterium and the change of lattice locations can be detected by ion channeling method. By analyzing the experimental data, we are able to determine specific information on the deuterium trapping conditions, including the number of deuterium atoms trapped by one vacancy as well as the presence of impurity atoms along with deuterium in vacancies. △ Less

Submitted 14 December, 2023; originally announced December 2023.

Roadmap for focused ion beam technologies

Authors: Katja Höflich, Gerhard Hobler, Frances I. Allen, Tom Wirtz, Gemma Rius, Lisa McElwee-White, Arkady V. Krasheninnikov, Matthias Schmidt, Ivo Utke, Nico Klingner, Markus Osenberg, Rosa Córdoba, Flyura Djurabekova, Ingo Manke, Philip Moll, Mariachiara Manoccio, José Marıa De Teresa, Lothar Bischoff, Johann Michler, Olivier De Castro, Anne Delobbe, Peter Dunne, Oleksandr V. Dobrovolskiy, Natalie Frese, Armin Gölzhäuser , et al. (7 additional authors not shown)

Abstract: The focused ion beam (FIB) is a powerful tool for the fabrication, modification and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was originally intended for photomask repair in the semiconductor industry, there are now many different types of FIB that are commercially available. These instruments use a range of ion species and are applied broadly in mat… ▽ More The focused ion beam (FIB) is a powerful tool for the fabrication, modification and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was originally intended for photomask repair in the semiconductor industry, there are now many different types of FIB that are commercially available. These instruments use a range of ion species and are applied broadly in materials science, physics, chemistry, biology, medicine, and even archaeology. The goal of this roadmap is to provide an overview of FIB instrumentation, theory, techniques and applications. By viewing FIB developments through the lens of the various research communities, we aim to identify future pathways for ion source and instrumentation development as well as emerging applications, and the scope for improved understanding of the complex interplay of ion-solid interactions. We intend to provide a guide for all scientists in the field that identifies common research interests and will support future fruitful interactions connecting tool development, experiment and theory. While a comprehensive overview of the field is sought, it is not possible to cover all research related to FIB technologies in detail. We give examples of specific projects within the broader context, referencing original works and previous review articles throughout. △ Less

Submitted 6 October, 2023; v1 submitted 31 May, 2023; originally announced May 2023.

Comments: This publication is based upon work from the COST Action FIT4NANO CA19140, supported by COST (European Cooperation in Science and Technology) https://www.cost.eu/. Financial support from COST Action CA19140 is acknowledged http://www.fit4nano.eu/ Version 3 has many text and language edits as well as layout tuning but no substantial new content

Universal radiation tolerant semiconductor

Authors: Alexander Azarov, Javier García Fernández, Junlei Zhao, Flyura Djurabekova, Huan He, Ru He, Øystein Prytz, Lasse Vines, Umutcan Bektas, Paul Chekhonin, Nico Klingner, Gregor Hlawacek, Andrej Kuznetsov

Abstract: Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta double polymorph Ga2O3 structures exhibit remarkably high radiation tolerance. Speci… ▽ More Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta double polymorph Ga2O3 structures exhibit remarkably high radiation tolerance. Specifically, for room temperature experiments, they tolerate a disorder equivalent to hundreds of displacements per atom, without severe degradations of crystallinity; in comparison with, e.g., Si amorphizable already with the lattice atoms displaced just once. We explain this behavior by an interesting combination of the Ga- and O- sublattice properties in gamma-Ga2O3. In particular, O-sublattice exhibits a strong recrystallization trend to recover the face-centered-cubic stacking despite the stronger displacement of O atoms compared to Ga during the active periods of cascades. Notably, we also explained the origin of the beta-to-gamma Ga2O3 transformation, as a function of the increased disorder in beta-Ga2O3 and studied the phenomena as a function of the chemical nature of the implanted atoms. As a result, we conclude that gamma/beta double polymorph Ga2O3 structures, in terms of their radiation tolerance properties, benchmark a class of universal radiation tolerant semiconductors. △ Less

Submitted 14 August, 2023; v1 submitted 23 March, 2023; originally announced March 2023.

Journal ref: Nature Communications 14, 4855 (2023)

Complex $\mathrm{Ga}_{2}\mathrm{O}_{3}$ Polymorphs Explored by Accurate and General-Purpose Machine-Learning Interatomic Potentials

Authors: Junlei Zhao, Jesper Byggmästar, Huan He, Kai Nordlund, Flyura Djurabekova, Mengyuan Hua

Abstract: $\mathrm{Ga}_{2}\mathrm{O}_{3}$ is a wide-bandgap semiconductor of emergent importance for applications in electronics and optoelectronics. However, vital information of the properties of complex coexisting $\mathrm{Ga}_{2}\mathrm{O}_{3}… ▽ More $\mathrm{Ga}_{2}\mathrm{O}_{3}$ is a wide-bandgap semiconductor of emergent importance for applications in electronics and optoelectronics. However, vital information of the properties of complex coexisting $\mathrm{Ga}_{2}\mathrm{O}_{3}$ polymorphs and low-symmetry disordered structures is missing. In this work, we develop two types of kernel-based machine-learning Gaussian approximation potentials (ML-GAPs) for $\mathrm{Ga}_{2}\mathrm{O}_{3}$ with high accuracy for $β$/$κ$/$α$/$δ$/$γ$ polymorphs and generality for disordered stoichiometric structures. We release two versions of interatomic potentials in parallel, namely soapGAP and tabGAP, for excellent accuracy and exceeding speedup, respectively. We systematically show that both the soapGAP and tabGAP can reproduce the structural properties of all the five polymorphs in an exceptional agreement with ab initio results, meanwhile boost the computational efficiency with $5\times10^{2}$ and $2\times10^{5}$ computing speed increases compared to density functional theory, respectively. The results show that the liquid-solid phase transition proceeds in three different stages, a "slow transition", "fast transition" and "only Ga migration". We show that this complex dynamics can be understood in terms of different behavior of O and Ga sublattices in the interfacial layer. △ Less

Submitted 4 May, 2023; v1 submitted 6 December, 2022; originally announced December 2022.

Comments: 13 pages, 7 figures

Journal ref: npj Computational Materials 9, 159 (2023)

Comparative study of H accumulation in differently oriented grains of Cu

Authors: A. Lopez-Cazalilla, Catarina Serafim, F. Djurabekova, Ana Teresa Perez-Fontenla, Sergio Calatroni, Walter Wuensch

Abstract: When metal surfaces are exposed to hydrogen ion irradiation, the light ions are expected to penetrate deep into the material and dissolve in the matrix. However, these atoms are seen to cause significant modification of surfaces, indicating that they accumulate in vicinity of the surface. The process known as blistering may reduces the vacuum dielectric strength above the metal surface, which show… ▽ More When metal surfaces are exposed to hydrogen ion irradiation, the light ions are expected to penetrate deep into the material and dissolve in the matrix. However, these atoms are seen to cause significant modification of surfaces, indicating that they accumulate in vicinity of the surface. The process known as blistering may reduces the vacuum dielectric strength above the metal surface, which shows a dense population of surface blisters. In this paper, we investigate how a bubble can grow under the pressure exerted by hydrogen atoms on the walls of the bubble and how this affect to the surface of Cu, whether an external electric field is applied or not. △ Less

Submitted 28 September, 2022; originally announced September 2022.

Observation of ripples under different angles

Authors: A. Lopez-Cazalilla, F. Djurabekova, K. Nordlund

Abstract: The off-normal ion irradiation of semiconductor materials is seen to induce nanopatterning effects. Different theories are proposed to explain the mechanisms that drive self-reorganization of amorphisable surfaces. One of the prominent hypothesis associates formation of nanopatterning with the changes of sputtering characteristics caused by changes in surface morphology. At ultra-low energy, when… ▽ More The off-normal ion irradiation of semiconductor materials is seen to induce nanopatterning effects. Different theories are proposed to explain the mechanisms that drive self-reorganization of amorphisable surfaces. One of the prominent hypothesis associates formation of nanopatterning with the changes of sputtering characteristics caused by changes in surface morphology. At ultra-low energy, when sputtering is negligible, the Si surface has still been seen to re-organize forming surface ripples with the wave vector either aligned with the ion beam direction or perpendicular to it.In this work, we investigate the formation of ripples using molecular dynamics in all the three regimes of ripple formation: low angles where no ripples form, intermediate regime where the ripple wave vectors are parallel to the beam, and high angles where they are perpendicular to it. We obtain atom-level insight on how the ion-beam driven atomic dynamics at the surface contributes to organization, or lack of it, in all the different regimes. Results of our simulations agree well with experimental observations in the same range of ultra-low energy of ion irradiation. △ Less

Submitted 23 November, 2022; v1 submitted 28 September, 2022; originally announced September 2022.

Efficient atomistic simulations of radiation damage in W and W-Mo using machine-learning potentials

Authors: Mikko Koskenniemi, Jesper Byggmästar, Kai Nordlund, Flyura Djurabekova

Abstract: The Gaussian approximation potential (GAP) is an accurate machine-learning interatomic potential that was recently extended to include the description of radiation effects. In this study, we seek to validate a faster version of GAP, known as tabulated GAP (tabGAP), by modelling primary radiation damage in 50-50 W-Mo alloys and pure W using classical molecular dynamics. We find that W-Mo exhibits a… ▽ More The Gaussian approximation potential (GAP) is an accurate machine-learning interatomic potential that was recently extended to include the description of radiation effects. In this study, we seek to validate a faster version of GAP, known as tabulated GAP (tabGAP), by modelling primary radiation damage in 50-50 W-Mo alloys and pure W using classical molecular dynamics. We find that W-Mo exhibits a similar number of surviving defects as in pure W. We also observe W-Mo to possess both more efficient recombination of defects produced during the initial phase of the cascades, and in some cases, unlike pure W, recombination of all defects after the cascades cooled down. Furthermore, we observe that the tabGAP is two orders of magnitude faster than GAP, but produces a comparable number of surviving defects and cluster sizes. A small difference is noted in the fraction of interstitials that are bound into clusters. △ Less

Submitted 1 June, 2023; v1 submitted 1 August, 2022; originally announced August 2022.

Biased self-diffusion on Cu surface due to electric field gradients

Authors: Jyri Kimari, Ye Wang, Andreas Kyritsakis, Veronika Zadin, Flyura Djurabekova

Abstract: Under strong electric fields, an arc of strong current flowing through plasma can link two metal surfaces even in ultra high vacuum. Despite decades of research, the chain of events leading to vacuum arc breakdowns is hitherto unknown. Previously we showed that a tall and sharp Cu nanotip exposed to strong electric fields heats up by field emission currents and eventually melts, evaporating neutra… ▽ More Under strong electric fields, an arc of strong current flowing through plasma can link two metal surfaces even in ultra high vacuum. Despite decades of research, the chain of events leading to vacuum arc breakdowns is hitherto unknown. Previously we showed that a tall and sharp Cu nanotip exposed to strong electric fields heats up by field emission currents and eventually melts, evaporating neutral atoms that can contribute to plasma buildup. In this work, we investigate by means of molecular dynamics simulations whether surface diffusion biased by the presence of an electric field gradient can provide sufficient mass transport of atoms toward the top of the nanotip to maintain supply of neutrals for feeding plasma. To reach the necessary timescales and to add electric field in MD, we utilized a novel combination of collective variable~-driven hyperdynamics acceleration and coupling to a finite element mesh. In our simulations, we observed biased self-diffusion on Cu surfaces, that can contribute to the continuous replenishment of particle-emitting nanotips. This mechanism implies a need to reduce the rate of surface diffusion in devices that are susceptible to vacuum arcs. Finding suitable alloys or surface treatments that hinder the observed biased diffusion could guide the design of future devices, and greatly improve their efficiency. △ Less

Submitted 19 August, 2022; v1 submitted 26 May, 2022; originally announced May 2022.

Journal ref: J. Phys. D: Appl. Phys. 55, 465302 (2022)

Insights into nanoparticle shape transformation by energetic ions using atomistic simulations

Authors: Aleksi A. Leino, Ville E. Jantunen, Flyura Djurabekova

Abstract: The shape of metal nanoparticles embedded in dielectric matrices influences the optical properties of the composite material. Swift heavy ion irradiation can induce a controllable shape transformation in gold and other metals embedded in amorphous silicon dioxide, where the particles elongate along the direction of the ion beam. The details of this transformation are not fully understood, but it i… ▽ More The shape of metal nanoparticles embedded in dielectric matrices influences the optical properties of the composite material. Swift heavy ion irradiation can induce a controllable shape transformation in gold and other metals embedded in amorphous silicon dioxide, where the particles elongate along the direction of the ion beam. The details of this transformation are not fully understood, but it is presumably related to nanometer-scale phase transitions induced by individual ion impacts. The phenomenon has been reproduced using atomistic simulations, although the time scale limitations and the lack of accurate interatomic models within the metal-silica interface lead unavoidably to severe simplifications. We improve the realism in the simulations with an accurate model for surface adhesion between gold and silica and by simulating the processes in the matrix between impacts. The simulations with correct adhesion show that the nanoparticles can grow in aspect ratio in the molten state even after silicon dioxide solidifies. Moreover, we demonstrate the active role of the matrix: without explicitly modeling processes in the matrix between impacts, the elongation is limited and does not reach significant aspect ratios seen in experiments. These results significantly improve the theoretical understanding of processes developing in embedded nanoparticles under swift heavy ion irradiation. The knowledge brings forward the ion beam technology as a precise tool for shaping of embedded nanostructures for various optical applications. △ Less

Submitted 21 April, 2022; originally announced April 2022.

Comments: 22 pages, 7 figures, supplementary material

Simple machine-learned interatomic potentials for complex alloys

Authors: Jesper Byggmästar, Kai Nordlund, Flyura Djurabekova

Abstract: Developing data-driven machine-learning interatomic potentials for materials containing many elements becomes increasingly challenging due to the vast configuration space that must be sampled by the training data. We study the learning rates and achievable accuracy of machine-learning interatomic potentials for many-element alloys with different combinations of descriptors for the local atomic env… ▽ More Developing data-driven machine-learning interatomic potentials for materials containing many elements becomes increasingly challenging due to the vast configuration space that must be sampled by the training data. We study the learning rates and achievable accuracy of machine-learning interatomic potentials for many-element alloys with different combinations of descriptors for the local atomic environments. We show that for a five-element alloy system, potentials using simple low-dimensional descriptors can reach meV/atom-accuracy with modestly sized training datasets, significantly outperforming the high-dimensional SOAP descriptor in data efficiency, accuracy, and speed. In particular, we develop a computationally fast machine-learned and tabulated Gaussian approximation potential (tabGAP) for Mo-Nb-Ta-V-W alloys with a combination of two-body, three-body, and a new simple scalar many-body density descriptor based on the embedded atom method. △ Less

Submitted 15 August, 2022; v1 submitted 16 March, 2022; originally announced March 2022.

Journal ref: Phys. Rev. Materials 6, 083801 (2022)

Multiscale machine-learning interatomic potentials for ferromagnetic and liquid iron

Authors: Jesper Byggmästar, Giorgos Nikoulis, Aslak Fellman, Fredric Granberg, Flyura Djurabekova, Kai Nordlund

Abstract: We develop and compare four interatomic potentials for iron: a simple machine-learned embedded atom method (EAM) potential, a potential with machine-learned two- and three-body-dependent terms, a potential with machine-learned EAM and three-body terms, and a Gaussian approximation potential with the SOAP descriptor. All potentials are trained to the same diverse database of body-centered cubic and… ▽ More We develop and compare four interatomic potentials for iron: a simple machine-learned embedded atom method (EAM) potential, a potential with machine-learned two- and three-body-dependent terms, a potential with machine-learned EAM and three-body terms, and a Gaussian approximation potential with the SOAP descriptor. All potentials are trained to the same diverse database of body-centered cubic and liquid structures computed with density functional theory. The four presented potentials represent different levels of complexity and span three orders of magnitude in computational cost. The first three potentials are tabulated and evaluated efficiently using cubic spline interpolations, while the fourth one is implemented without additional optimization. We compare and discuss the advantages of each implementation, transferability and applicability in terms of the balance between required accuracy versus computational cost. △ Less

Submitted 25 January, 2022; originally announced January 2022.

Journal ref: J. Phys.: Condens. Matter 34 305402 (2022)

Polarization characteristics of adatoms self-diffusing on metal surfaces under high electric fields

Authors: Ekaterina Baibuz, Andreas Kyritsakis, Ville Jansson, Flyura Djurabekova

Abstract: Although atomic diffusion on metal surfaces under high electric fields has been studied theoretically and experimentally since the 1970s, its accurate and quantitative theoretical description remains a significant challenge. In our previous work, we developed a theoretical framework that describes the atomic dynamics on metal surfaces in the presence of an electric field in terms of the local pola… ▽ More Although atomic diffusion on metal surfaces under high electric fields has been studied theoretically and experimentally since the 1970s, its accurate and quantitative theoretical description remains a significant challenge. In our previous work, we developed a theoretical framework that describes the atomic dynamics on metal surfaces in the presence of an electric field in terms of the local polarization characteristics of the surface at the vicinity of a moving atom. Here, we give a deeper analysis of the physics underlying this framework, introducing and rigorously defining the concept of the effective polarization characteristics (permanent dipole moment $μ$ and polarizability $α$) of a moving atom on a metal surface, which are shown to be the relevant atomic quantities determining the dynamics of a moving atom via a compact equation. We use density functional theory (DFT) to calculate $μ$ and $α$ of a W adatom moving on a W {110} surface, where additional adatoms are present in its vicinity. We analyze the dependence of $μ$ and $α$ and hence the migration barriers under electric fields on the local atomic environments (LAE) of an adatom. We find that the LAE significantly affects $μ$ and $α$ of a moving atom in the limited cases we studied, which implies that further systematic DFT calculations are needed to fully parameterize surface diffusion in terms of energy barriers for long-term large scale simulations, such as our recently developed Kinetic Monte Carlo model for surface diffusion under electric field. △ Less

Submitted 10 January, 2022; originally announced January 2022.

Comments: 13 pages including references and appendix, 9 figures

Linear voltage recovery after a breakdown in a pulsed dc system

Authors: Anton Saressalo, Dan Wang, Flyura Djurabekova

Abstract: Breakdowns may occur in high-voltage applications even in ultrahigh vacuum conditions. Previously, we showed that it is important to pay attention to the post-breakdown voltage recovery in order to limit the appearance of secondary breakdowns associated with the primary ones. This can improve the overall efficiency of the high-voltage device. In this study, we focus on the optimization of the line… ▽ More Breakdowns may occur in high-voltage applications even in ultrahigh vacuum conditions. Previously, we showed that it is important to pay attention to the post-breakdown voltage recovery in order to limit the appearance of secondary breakdowns associated with the primary ones. This can improve the overall efficiency of the high-voltage device. In this study, we focus on the optimization of the linear post-breakdown voltage recovery, with the principle aim of alleviating the problem of the secondary breakdowns. We investigate voltage recovery scenarios with different starting voltages and slopes of linear voltage increase by using a pulsed dc system. We find that a higher number of pulses during the voltage recovery produces fewer secondary BDs and a lower overall breakdown rate. Lowering the number of pulses led to more dramatic voltage recovery resulting in higher breakdown rates. A steeper voltage increase rate lead to a more localized occurrence of the secondary breakdowns near the end of the voltage recovery period. It was also found that the peak BD probability is regularly observed around 1 s after the end of the ramping period and that its value decreases exponentially with the amount of energy put into the system during the ramping. The value also decays exponentially with a half-life of (1.4$\pm$0.3) ms if the voltage only increased between the voltage recovery steps. △ Less

Submitted 12 November, 2021; v1 submitted 27 August, 2021; originally announced August 2021.

Comments: 10 pages, 6 figures

Modeling refractory high-entropy alloys with efficient machine-learned interatomic potentials: defects and segregation

Authors: Jesper Byggmästar, Kai Nordlund, Flyura Djurabekova

Abstract: We develop a fast and accurate machine-learned interatomic potential for the Mo-Nb-Ta-V-W quinary system and use it to study segregation and defects in the body-centred cubic refractory high-entropy alloy MoNbTaVW. In the bulk alloy, we observe clear ordering of mainly Mo-Ta and V-W binaries at low temperatures. In damaged crystals, our simulations reveal clear segregation of vanadium, the smalles… ▽ More We develop a fast and accurate machine-learned interatomic potential for the Mo-Nb-Ta-V-W quinary system and use it to study segregation and defects in the body-centred cubic refractory high-entropy alloy MoNbTaVW. In the bulk alloy, we observe clear ordering of mainly Mo-Ta and V-W binaries at low temperatures. In damaged crystals, our simulations reveal clear segregation of vanadium, the smallest atom in the alloy, to compressed interstitial-rich regions like radiation-induced dislocation loops. Vanadium also dominates the population of single self-interstitial atoms. In contrast, due to its larger size and low surface energy, niobium segregates to spacious regions like the inner surfaces of voids. When annealing samples with supersaturated concentrations of defects, we find that in complete contrast to W, interstitial atoms in MoNbTaVW cluster to create only small ($\sim 1$ nm) experimentally invisible dislocation loops enriched by vanadium. By comparison to W, we explain this by the reduced but three-dimensional migration of interstitials, the immobility of dislocation loops, and the increased mobility of vacancies in the high-entropy alloy, which together promote defect recombination over clustering. △ Less

Submitted 6 September, 2021; v1 submitted 7 June, 2021; originally announced June 2021.

Journal ref: Phys. Rev. B 104, 104101 (2021)

Phase Transition of Two-Dimensional Ferroelectric and Paraelectric Ga2O3 Monolayer: A Density Functional Theory and Machine-Learning Study

Authors: Junlei Zhao, Jesper Byggmastar, Zhaofu Zhang, Flyura Djurabekova, Kai Nordlund, Mengyuan Hua

Abstract: Ga2O3 is a wide-band-gap semiconductor of great interest for applications in electronics and optoelectronics. Two-dimensional (2D) Ga2O3 synthesized from top-down or bottom-up processes can reveal brand new heterogeneous structures and promising applications. In this paper, we study phase transitions among three low-energy stable Ga2O3 monolayer configurations using density functional theory and a… ▽ More Ga2O3 is a wide-band-gap semiconductor of great interest for applications in electronics and optoelectronics. Two-dimensional (2D) Ga2O3 synthesized from top-down or bottom-up processes can reveal brand new heterogeneous structures and promising applications. In this paper, we study phase transitions among three low-energy stable Ga2O3 monolayer configurations using density functional theory and a newly developed machine-learning Gaussian approximation potential, together with solid-state nudged elastic band calculations. Kinetic minimum energy paths involving direct atomic jump as well as concerted layer motion are investigated. The low phase transition barriers indicate feasible tunability of the phase transition and orientation via strain engineering and external electric fields. Large-scale calculations using the newly trained machine-learning potential on the thermally activated single-atom jumps reveal the clear nucleation and growth processes of different domains. The results provide useful insights to future experimental synthesis and characterization of 2D Ga2O3 monolayers. △ Less

Submitted 27 May, 2021; originally announced May 2021.

Comments: 10 pages, 7 figures, under review

Journal ref: Phys. Rev. B 104, 054107 (2021)

Electron cascades and secondary electron emission in graphene under energetic ion irradiation

Authors: Henrique Vázquez, Alina Kononov, Andreas Kyritsakis, Nikita Medvedev, André Schleife, Flyura Djurabekova

Abstract: Highly energetic ions traversing a two-dimensional material such as graphene produce strong electronic excitations. Electrons excited to energy states above the work function can give rise to secondary electron emission, reducing the amount of energy that remains the graphene after the ion impact. Electrons can either be emitted (kinetic energy transfer) or captured by the passing ion (potential e… ▽ More Highly energetic ions traversing a two-dimensional material such as graphene produce strong electronic excitations. Electrons excited to energy states above the work function can give rise to secondary electron emission, reducing the amount of energy that remains the graphene after the ion impact. Electrons can either be emitted (kinetic energy transfer) or captured by the passing ion (potential energy transfer). To elucidate this behavior that is absent in three-dimensional materials, we simulate the electron dynamics in graphene during the first femtoseconds after ion impact. We employ two conceptually different computational methods: a Monte Carlo (MC) based one, where electrons are treated as classical particles, and time-dependent density functional theory (TDDFT), where electrons are described quantum-mechanically. We observe that the linear dependence of electron emission on deposited energy, emerging from MC simulations, becomes sublinear and closer to the TDDFT values when the electrostatic interactions of emitted electrons with graphene are taken into account via complementary particle-in-cell simulations. Our TDDFT simulations show that the probability for electron capture decreases rapidly with increasing ion velocity, whereas secondary electron emission dominates in the high velocity regime. We estimate that these processes reduce the amount of energy deposited in the graphene layer by 15\,\% to 65\,\%, depending on the ion and its velocity. This finding clearly shows that electron emission must be taken into consideration when modelling damage production in two-dimensional materials under ion irradiation. △ Less

Submitted 30 November, 2020; originally announced November 2020.

Comments: 14 pages, 8 figures

Journal ref: Phys. Rev. B 103, 224306 (2021)

Computational study of crystal defects formation in Mo by machine learned molecular dynamics simulations

Authors: F. J. Dominguez-Gutierrez, J. Byggmästar, K. Nordlund, F. Djurabekova, U. von Toussaint

Abstract: In this work, we study the damage in crystalline molybdenum material samples due to neutron bombardment in a primary knock-on atom range of 0.5-10 keV at room temperature. We perform machine learned molecular dynamics (MD) simulations with a previously developed interatomic potential based on the Gaussian Approximation Potential (GAP) framework. We utilize a recently developed software workflow fo… ▽ More In this work, we study the damage in crystalline molybdenum material samples due to neutron bombardment in a primary knock-on atom range of 0.5-10 keV at room temperature. We perform machine learned molecular dynamics (MD) simulations with a previously developed interatomic potential based on the Gaussian Approximation Potential (GAP) framework. We utilize a recently developed software workflow for fingerprinting and visualizing defects in damage crystal structures to analyze the damaged Mo samples by computing the formation of point defects during and after a collision cascade. As a benchmark, we report results for the total number of Frenkel pairs (a self-interstitial atom and a single vacancy) formed and atom displacement as a function of the PKA energy. A comparison to results obtained by using an Embedded Atom Method (EAM) potential is presented to discuss the advantages and limits of the machine learned MD simulations. The formation of Frenkel pairs follows a sublinear scaling law related to the PKA energy with $E^{0.54}_\mathrm{PKA}$ to the GAP MD results and $E^{0.667}_\mathrm{PKA}$ for the EAM simulations. Although the average number total defects is similar for both methods, we notice that MD potentials model different atomic geometries for the complex point defects, where the formation of crowdions is more favorable for the GAP potential. Finally, ion beam mixing results for GAP MD simulations are reported and discussed. △ Less

Submitted 5 October, 2020; originally announced October 2020.

Journal ref: Modelling and Simulation in Materials Science and Engineering, 2020

Effect of dc voltage pulsing on high-vacuum electrical breakdowns near Cu surfaces

Authors: Anton Saressalo, Iaroslava Profatilova, William L. Millar, Andreas Kyritsakis, Sergio Calatroni, Walter Wuensch, Flyura Djurabekova

Abstract: Vacuum electrical breakdowns, also known as vacuum arcs, are a limiting factor in many devices that are based on application of high electric fields near their component surfaces. Understanding of processes that lead to breakdown events may help mitigating their appearance and suggest ways for improving operational efficiency of power-consuming devices. Stability of surface performance at a given… ▽ More Vacuum electrical breakdowns, also known as vacuum arcs, are a limiting factor in many devices that are based on application of high electric fields near their component surfaces. Understanding of processes that lead to breakdown events may help mitigating their appearance and suggest ways for improving operational efficiency of power-consuming devices. Stability of surface performance at a given value of the electric field is affected by the conditioning state, i.e. how long the surface was exposed to this field. Hence, optimization of the surface conditioning procedure can significantly speed up the preparatory steps for high-voltage applications. In this article, we use pulsed dc systems to optimize the surface conditioning procedure of copper electrodes, focusing on the effects of voltage recovery after breakdowns, variable repetition rates as well as long waiting times between pulsing runs. Despite the differences in the experimental scales, ranging from $10^{-4}$ s between pulses, up to pulsing breaks of $10^5$ s, the experiments show that the longer the idle time between the pulses, the more probable it is that the next pulse produces a breakdown. We also notice that secondary breakdowns, i.e. those which correlate with the previous ones, take place mainly during the voltage recovery stage. We link these events with deposition of residual atoms from vacuum on the electrode surfaces. Minimizing the number of pauses during the voltage recovery stage reduces power losses due to secondary breakdown events improving efficiency of the surface conditioning. △ Less

Submitted 10 November, 2020; v1 submitted 5 August, 2020; originally announced August 2020.

Comments: 14 pages, 11 figures. Submitted to Physical Review Accelerators and Beams

Journal ref: Phys. Rev. Accel. Beams 23, 113101 (2020)

Gaussian approximation potentials for body-centered-cubic transition metals

Authors: Jesper Byggmästar, Kai Nordlund, Flyura Djurabekova

Abstract: We develop a set of machine-learning interatomic potentials for elemental V, Nb, Mo, Ta, and W using the Gaussian approximation potential framework. The potentials show good accuracy and transferability for elastic, thermal, liquid, defect, and surface properties. All potentials are augmented with accurate repulsive potentials, making them applicable to radiation damage simulations involving high-… ▽ More We develop a set of machine-learning interatomic potentials for elemental V, Nb, Mo, Ta, and W using the Gaussian approximation potential framework. The potentials show good accuracy and transferability for elastic, thermal, liquid, defect, and surface properties. All potentials are augmented with accurate repulsive potentials, making them applicable to radiation damage simulations involving high-energy collisions. We study melting and liquid properties in detail and use the potentials to provide melting curves up to 400 GPa for all five elements. △ Less

Submitted 6 October, 2020; v1 submitted 25 June, 2020; originally announced June 2020.

Journal ref: Phys. Rev. Materials 4, 093802 (2020)

Gradient-Based Training and Pruning of Radial Basis Function Networks with an Application in Materials Physics

Authors: Jussi Määttä, Viacheslav Bazaliy, Jyri Kimari, Flyura Djurabekova, Kai Nordlund, Teemu Roos

Abstract: Many applications, especially in physics and other sciences, call for easily interpretable and robust machine learning techniques. We propose a fully gradient-based technique for training radial basis function networks with an efficient and scalable open-source implementation. We derive novel closed-form optimization criteria for pruning the models for continuous as well as binary data which arise… ▽ More Many applications, especially in physics and other sciences, call for easily interpretable and robust machine learning techniques. We propose a fully gradient-based technique for training radial basis function networks with an efficient and scalable open-source implementation. We derive novel closed-form optimization criteria for pruning the models for continuous as well as binary data which arise in a challenging real-world material physics problem. The pruned models are optimized to provide compact and interpretable versions of larger models based on informed assumptions about the data distribution. Visualizations of the pruned models provide insight into the atomic configurations that determine atom-level migration processes in solid matter; these results may inform future research on designing more suitable descriptors for use with machine learning algorithms. △ Less

Submitted 6 April, 2020; originally announced April 2020.

Journal ref: Neural Networks 133, 123 (2021)

Crystal Defects: A Portal To Dark Matter Detection

Authors: Fedja Kadribasic, Nader Mirabolfathi, Kai Nordlund, Flyura Djurabekova

Abstract: We propose to use the defect creation energy loss in commonly used high energy physics solid state detectors as a tool to statistically identify dark matter signal from background. We simulate the energy loss in the process of defect creation using density functional theory and molecular dynamics methods and calculate the corresponding expected dark matter spectra. We show that in phonon-mediated… ▽ More We propose to use the defect creation energy loss in commonly used high energy physics solid state detectors as a tool to statistically identify dark matter signal from background. We simulate the energy loss in the process of defect creation using density functional theory and molecular dynamics methods and calculate the corresponding expected dark matter spectra. We show that in phonon-mediated solid state detectors, the energy loss due to defect creation convolved with the expected dark matter interaction signal results in a significant change in the expected spectra for common detector materials. With recent progress towards $\sim$10 eV threshold low-mass dark matter searches, this variation in expected dark matter spectrum can be used as a direct signature of dark matter interactions with atomic nuclei. △ Less

Submitted 11 February, 2020; v1 submitted 9 February, 2020; originally announced February 2020.

Fundamental Phenomena and Applications of Swift Heavy Ion Irradiations

Authors: Maik Lang, Flyura Djurabekova, Nikita Medvedev, Marcel Toulemonde, Christina Trautmann

Abstract: This review concentrates on the specific properties and characteristics of damage structures generated with high-energy ions in the electronic energy loss regime. Irradiation experiments with so-called swift heavy ions (SHI) find applications in many different fields, with examples presented in ion-track nanotechnology, radiation hardness analysis of functional materials, and laboratory tests of c… ▽ More This review concentrates on the specific properties and characteristics of damage structures generated with high-energy ions in the electronic energy loss regime. Irradiation experiments with so-called swift heavy ions (SHI) find applications in many different fields, with examples presented in ion-track nanotechnology, radiation hardness analysis of functional materials, and laboratory tests of cosmic radiation. The basics of the SHI-solid interaction are described with special attention to processes in the electronic subsystem. The broad spectrum of damage phenomena is exemplified for various materials and material classes, along with a description of typical characterization techniques. The review also presents state-of-the-art modeling efforts that try to account for the complexity of the coupled processes of the electronic and atomic subsystems. Finally, the relevance of SHI phenomena for effects induced by fission fragments in nuclear fuels and how this knowledge can be applied to better estimate damage risks in nuclear materials is discussed. △ Less

Submitted 11 January, 2020; originally announced January 2020.

Classification of vacuum arc breakdowns in a pulsed DC system

Authors: Anton Saressalo, Iaroslava Profatilova, Andreas Kyritsakis, Jan Paszkiewicz, Sergio Calatroni, Walter Wuensch, Flyura Djurabekova

Abstract: Understanding the microscopic phenomena behind vacuum arc ignition and generation is crucial for being able to control the breakdown rate, thus improving the effectiveness of many high-voltage applications where frequent breakdowns limit the operation. In this work, statistical properties of various aspects of breakdown, such as the number of pulses between breakdowns, breakdown locations and crat… ▽ More Understanding the microscopic phenomena behind vacuum arc ignition and generation is crucial for being able to control the breakdown rate, thus improving the effectiveness of many high-voltage applications where frequent breakdowns limit the operation. In this work, statistical properties of various aspects of breakdown, such as the number of pulses between breakdowns, breakdown locations and crater sizes are studied independently with almost identical Pulsed DC Systems at the University of Helsinki and in CERN. In high-gradient experiments, copper electrodes with parallel plate capacitor geometry, undergo thousands of breakdowns. The results support the classification of the events into primary and secondary breakdowns, based on the distance and number of pulses between two breakdowns. Primary events follow a power law on the log--log scale with the slope $α\approx 1.33$, while the secondaries are highly dependent on the pulsing parameters. △ Less

Submitted 23 January, 2020; v1 submitted 11 November, 2019; originally announced November 2019.

Comments: 11 pages, 13 figures

Journal ref: Phys. Rev. Accel. Beams 23, 023101 (2020)

On the classification and quantification of crystal defects after energetic bombardment by machine learned molecular dynamics simulations

Authors: F. J. Domínguez-Gutiérrez, J Byggmästar, K. Nordlund, F. Djurabekova, U von Toussaint

Abstract: The analysis of the damage on plasma facing materials (PFM), due to its direct interaction with the plasma environment, is needed to build the next generation of nuclear machines, where tungsten has been proposed as a candidate. In this work, we perform molecular dynamics (MD) simulations using a machine learned inter-atomic potential, based on the Gaussian Approximation Potential framework, to mo… ▽ More The analysis of the damage on plasma facing materials (PFM), due to its direct interaction with the plasma environment, is needed to build the next generation of nuclear machines, where tungsten has been proposed as a candidate. In this work, we perform molecular dynamics (MD) simulations using a machine learned inter-atomic potential, based on the Gaussian Approximation Potential framework, to model better neutron bombardment mechanisms in pristine W lattices. The MD potential is trained to reproduce realistic short-range dynamics, the liquid phase, and the material recrystallization, which are important for collision cascades. The formation of point defects is quantified and classified by a descriptor vector (DV) based method, which is independent of the sample temperature and its constituents, requiring only modest computational resources. The locations of vacancies are calculated by the k-d-tree algorithm. The analysis of the damage in the W samples is compared to results obtained by EAM Finnis-Sinclair and Tersoff-ZBL potentials, at a sample temperature of 300 K and a primary knock-on atom (PKA) energy range of 0.5-10 keV, where a good agreement with the reported number of Frenkel pair is observed. Our results provide information about the advantages and limits of the machine learned MD simulations with respect to the standard ones. The formation of dumbbell and crowdion defects as a function of PKA is discussed. △ Less

Submitted 26 October, 2019; originally announced October 2019.

Growth mechanism for nanotips in high electric fields

Authors: Ville Jansson, Ekaterina Baibuz, Andreas Kyritsakis, Simon Vigonski, Vahur Zadin, Stefan Parviainen, Alvo Aabloo, Flyura Djurabekova

Abstract: In this work we show using atomistic simulations that the biased diffusion in high electric field gradients creates a mechanism whereby nanotips may start growing from small surface asperities. It has long been known that atoms on a metallic surface have biased diffusion if electric fields are applied and that microscopic tips may be sharpened using fields, but the exact mechanisms have not been w… ▽ More In this work we show using atomistic simulations that the biased diffusion in high electric field gradients creates a mechanism whereby nanotips may start growing from small surface asperities. It has long been known that atoms on a metallic surface have biased diffusion if electric fields are applied and that microscopic tips may be sharpened using fields, but the exact mechanisms have not been well understood. Our Kinetic Monte Carlo simulation model uses a recently developed theory for how the migration barriers are affected by the presence of an electric field. All parameters of the model are physically motivated and no fitting parameters are used. The model has been validated by reproducing characteristic faceting patterns of tungsten surfaces that have in previous experiments been observed to only appear in the presence of strong electric fields. The growth effect is found to be enhanced by increasing fields and temperatures. △ Less

Submitted 7 May, 2020; v1 submitted 12 September, 2019; originally announced September 2019.

Journal ref: Nanotechnology 31 355301 (2020)

Tungsten migration energy barriers for surface diffusion: a parameterization for KMC simulations

Authors: Ville Jansson, Andreas Kyritsakis, Simon Vigonski, Ekaterina Baibuz, Vahur Zadin, Alvo Aabloo, Flyura Djurabekova

Abstract: We have calculated the migration barriers for surface diffusion on Tungsten. Our results form a self-sufficient parameterization for Kinetic Monte Carlo simulations of arbitrarily rough atomic tungsten surfaces, as well as nanostructures such as nanotips and nanoclusters. The parameterization includes first- and second-nearest neighbour atom jump processes, as well as a third-nearest neighbour exc… ▽ More We have calculated the migration barriers for surface diffusion on Tungsten. Our results form a self-sufficient parameterization for Kinetic Monte Carlo simulations of arbitrarily rough atomic tungsten surfaces, as well as nanostructures such as nanotips and nanoclusters. The parameterization includes first- and second-nearest neighbour atom jump processes, as well as a third-nearest neighbour exchange process. The migration energy barriers of all processes are calculated with the Nudged Elastic Band method. The same attempt frequency for all processes is found sufficient and the value is fitted to Molecular Dynamics simulations. The model is validated by correctly simulating with Kinetic Monte Carlo the energetically favourable W nanocluster shapes, in good agreement with Molecular Dynamics simulations. △ Less

Submitted 17 February, 2020; v1 submitted 8 September, 2019; originally announced September 2019.

Journal ref: Modelling Simul. Mater. Sci. Eng. 28 035011 (2020)

Machine-learning interatomic potential for radiation damage and defects in tungsten

Authors: Jesper Byggmästar, Ali Hamedani, Kai Nordlund, Flyura Djurabekova

Abstract: We introduce a machine-learning interatomic potential for tungsten using the Gaussian Approximation Potential framework. We specifically focus on properties relevant for simulations of radiation-induced collision cascades and the damage they produce, including a realistic repulsive potential for the short-range many-body cascade dynamics and a good description of the liquid phase. Furthermore, the… ▽ More We introduce a machine-learning interatomic potential for tungsten using the Gaussian Approximation Potential framework. We specifically focus on properties relevant for simulations of radiation-induced collision cascades and the damage they produce, including a realistic repulsive potential for the short-range many-body cascade dynamics and a good description of the liquid phase. Furthermore, the potential accurately reproduces surface properties and the energetics of vacancy and self-interstitial clusters, which have been long-standing deficiencies of existing potentials. The potential enables molecular dynamics simulations of radiation damage in tungsten with unprecedented accuracy. △ Less

Submitted 23 October, 2019; v1 submitted 20 August, 2019; originally announced August 2019.

Journal ref: Phys. Rev. B 100, 144105 (2019)

Ab Initio calculation of field emission from metal surfaces with atomic--scale defects

Authors: Heikki Toijala, Kristjan Eimre, Andreas Kyritsakis, Vahur Zadin, Flyura Djurabekova

Abstract: In this work we combine density functional theory and quantum transport calculations to study the influence of atomic--scale defects on the work function and field emission characteristics of metal surfaces. We develop a general methodology for the calculation of the field emitted current density from nano-featured surfaces, which is then used to study specific defects on a Cu(111) surface. Our re… ▽ More In this work we combine density functional theory and quantum transport calculations to study the influence of atomic--scale defects on the work function and field emission characteristics of metal surfaces. We develop a general methodology for the calculation of the field emitted current density from nano-featured surfaces, which is then used to study specific defects on a Cu(111) surface. Our results show that the inclusion of a defect can significantly locally enhance the field emitted current density. However, this increase is attributed solely to the decrease of the work function due to the defect, with the effective field enhancement being minute. Finally, the Fowler--Nordheim equation is found to be valid when the modified value for the work function is used, with only an approximately constant factor separating the computed currents from those predicted by the Fowler--Nordheim equation. △ Less

Submitted 30 July, 2019; originally announced July 2019.

Comments: 12 pages, 9 figures

Journal ref: Phys. Rev. B 100, 165421 (2019)

Atomistic behavior of metal surfaces under high electric fields

Authors: Andreas Kyritsakis, Ekaterina Baibuz, Ville Jansson, Flyura Djurabekova

Abstract: Combining classical electrodynamics and density functional theory (DFT) calculations, we develop a general and rigorous theoretical framework that describes the energetics of metal surfaces under high electric fields. We show that the behavior of a surface atom in the presence of an electric field can be described by the polarization characteristics of the permanent and field-induced charges in it… ▽ More Combining classical electrodynamics and density functional theory (DFT) calculations, we develop a general and rigorous theoretical framework that describes the energetics of metal surfaces under high electric fields. We show that the behavior of a surface atom in the presence of an electric field can be described by the polarization characteristics of the permanent and field-induced charges in its vicinity. We use DFT calculations for the case of a W adatom on a W{110} surface to confirm the predictions of our theory and quantify its system-specific parameters. Our quantitative predictions for the diffusion of W-on-W{110} under field are in good agreement with experimental measurements. This work is a crucial step towards developing atomistic computational models of such systems for long-term simulations. △ Less

Submitted 16 May, 2019; v1 submitted 23 August, 2018; originally announced August 2018.

Comments: 9 pages, 5 figures, 2 tables

Journal ref: Phys. Rev. B 99, 205418 (2019)

Molecular dynamics simulations of surface modification formations on polycrystalline Cu under high electric fields

Authors: Kristian Kuppart, Simon Vigonski, Alvo Aabloo, Flyura Djurabekova, Vahur Zadin

Abstract: Vacuum breakdowns in particle accelerators and other devices operating at high electric fields is a common problem in the operation of these devices. It has been proposed that the onset of vacuum breakdowns is associated with appearance of surface protrusions while the device is in operation under high electric field. Moreover, the breakdown tolerance of an electrode material was correlated with t… ▽ More Vacuum breakdowns in particle accelerators and other devices operating at high electric fields is a common problem in the operation of these devices. It has been proposed that the onset of vacuum breakdowns is associated with appearance of surface protrusions while the device is in operation under high electric field. Moreover, the breakdown tolerance of an electrode material was correlated with the type of lattice structure of the material. In the current paper we conduct molecular dynamics simulations of nanocrystalline copper surfaces and show the possibility of protrusion growth under the stress exerted on the surface by an applied electrostatic field. We show the importance of grain boundaries on the protrusion formation and establish a linear relationship between the necessary electrostatic stress for protrusion formation and the temperature of the system. We show that time for protrusion formation increases with the lowering electrostatic field and give the Arrhenius extrapolation to the case of lower fields. General discussion of the protrusion formation mechanisms in the case of polycrystalline copper surfaces is presented. △ Less

Submitted 28 May, 2018; originally announced May 2018.

Thermal runaway of metal nano-tips during intense electron emission

Authors: A. Kyritsakis, M. Veske, K. Eimre, V. Zadin, F. Djurabekova

Abstract: When an electron emitting tip is subjected to very high electric fields, plasma forms even under ultra high vacuum conditions. This phenomenon, known as vacuum arc, causes catastrophic surface modifications and constitutes a major limiting factor not only for modern electron sources, but also for many large-scale applications such as particle accelerators, fusion reactors etc. Although vacuum arcs… ▽ More When an electron emitting tip is subjected to very high electric fields, plasma forms even under ultra high vacuum conditions. This phenomenon, known as vacuum arc, causes catastrophic surface modifications and constitutes a major limiting factor not only for modern electron sources, but also for many large-scale applications such as particle accelerators, fusion reactors etc. Although vacuum arcs have been studied thoroughly, the physical mechanisms that lead from intense electron emission to plasma ignition are still unclear. In this article, we give insights to the atomic scale processes taking place in metal nanotips under intense field emission conditions. We use multi-scale atomistic simulations that concurrently include field-induced forces, electron emission with finite-size and space-charge effects, Nottingham and Joule heating. We find that when a sufficiently high electric field is applied to the tip, the emission-generated heat partially melts it and the field-induced force elongates and sharpens it. This initiates a positive feedback thermal runaway process, which eventually causes evaporation of large fractions of the tip. The reported mechanism can explain the origin of neutral atoms necessary to initiate plasma, a missing key process required to explain the ignition of a vacuum arc. Our simulations provide a quantitative description of in the conditions leading to runaway, which shall be valuable for both field emission applications and vacuum arc studies. △ Less

Submitted 28 March, 2018; v1 submitted 26 September, 2017; originally announced October 2017.

Journal ref: J.Phys.D:Appl.Phys. 51 (2018) 225203

Au nanowire junction breakup through surface atom diffusion

Authors: Simon Vigonski, Ville Jansson, Sergei Vlassov, Boris Polyakov, Ekaterina Baibuz, Sven Oras, Alvo Aabloo, Flyura Djurabekova, Vahur Zadin

Abstract: Metallic nanowires are known to break into shorter fragments due to the Rayleigh instability mechanism. This process is strongly accelerated at elevated temperatures and can completely hinder the functioning of nanowire-based devices like e.g. transparent conductive and flexible coatings. At the same time, arranged gold nanodots have important applications in electrochemical sensors. In this paper… ▽ More Metallic nanowires are known to break into shorter fragments due to the Rayleigh instability mechanism. This process is strongly accelerated at elevated temperatures and can completely hinder the functioning of nanowire-based devices like e.g. transparent conductive and flexible coatings. At the same time, arranged gold nanodots have important applications in electrochemical sensors. In this paper we perform a series of annealing experiments of gold and silver nanowires and nanowire junctions at fixed temperatures 473, 673, 873 and 973 K (200, 400, 600 and 700 °C) during a time period of 10 minutes. We show that nanowires are especially prone to fragmentation around junctions and crossing points even at comparatively low temperatures. The fragmentation process is highly temperature dependent and the junction region breaks up at a lower temperature than a single nanowire. We develop a gold parametrization for Kinetic Monte Carlo simulations and demonstrate the surface diffusion origin of the nanowire junction fragmentation. We show that nanowire fragmentation starts at the junctions with high reliability and propose that aligning nanowires in a regular grid could be used as a technique for fabricating arrays of nanodots. △ Less

Submitted 15 March, 2018; v1 submitted 26 September, 2017; originally announced September 2017.

Journal ref: Simon Vigonski et al 2018 Nanotechnology 29 015704

Adatom diffusion in high electric fields

Authors: Ville Jansson, Ekaterina Baibuz, Andreas Kyritsakis, Flyura Djurabekova

Abstract: Strong electric fields are known to create biased adatom migration on metallic surfaces. We present a Kinetic Monte Carlo model that can simulate adatom migration on a tungsten (W) surface in electric fields. We validate our model by using it to calculate the drift velocity of the adatom at different fields and temperature and comparing the results with experimental data from the literature. We ob… ▽ More Strong electric fields are known to create biased adatom migration on metallic surfaces. We present a Kinetic Monte Carlo model that can simulate adatom migration on a tungsten (W) surface in electric fields. We validate our model by using it to calculate the drift velocity of the adatom at different fields and temperature and comparing the results with experimental data from the literature. We obtain excellent agreement. △ Less

Submitted 14 September, 2017; originally announced September 2017.

Journal ref: Ville Jansson, Ekaterin Baibuz, Andreas Kyritsakis, and Flyura Djurabekova. Adatom diffusion in high electric fields. In 2017 30th International Vacuum Nanoelectronics Conference (IVNC), pages 40-41. IEEE, 2017. ISBN 978-1-5090-3973-9

Simulations of surface stress effects in nanoscale single crystals

Authors: Vahur Zadin, Mihkel Veske, Simon Vigonski, Ville Jansson, Johann Muszinsky, Stefan Parviainen, Aalvo Aabloo, Flyura Djurabekova

Abstract: Onset of vacuum arcing near a metal surface is often associated with nanoscale asperities, which may dynamically appear due to different processes ongoing in the surface and subsurface layers in the presence of high electric fields. Thermally activated processes, as well as plastic deformation caused by tensile stress due to an applied electric field, are usually not accessible by atomistic simula… ▽ More Onset of vacuum arcing near a metal surface is often associated with nanoscale asperities, which may dynamically appear due to different processes ongoing in the surface and subsurface layers in the presence of high electric fields. Thermally activated processes, as well as plastic deformation caused by tensile stress due to an applied electric field, are usually not accessible by atomistic simulations because of long time needed for these processes to occur. On the other hand, finite element methods, able to describe the process of plastic deformations in materials at realistic stresses, do not include surface properties. The latter are particularly important for the problems where the surface plays crucial role in the studied process, as for instance, in case of plastic deformations at a nanovoid. In the current study by means of molecular dynamics and finite element simulations we analyse the stress distribution in single crystal copper containing a nanovoid buried deep under the surface. We have developed a methodology to incorporate the surface effects into the solid mechanics framework by utilizing elastic properties of crystals, pre-calculated using molecular dynamic simulations. The method leads to computationally efficient stress calculations and can be easily implemented in commercially available finite element software, making it an attractive analysis tool. △ Less

Submitted 17 August, 2017; originally announced August 2017.

Cu self-sputtering MD simulations for 0.1-5 keV ions at elevated temperatures

Authors: Tarvo Metspalu, Ville Jansson, Vahur Zadin, Konstantin Avchaciov, Kai Nordlund, Alvo Aabloo, Flyura Djurabekova

Abstract: Self-sputtering of copper under high electric fields is considered to contribute to plasma buildup during a vacuum breakdown event frequently observed near metal surfaces, even in ultra high vacuum condition in different electric devices. In this study, by means of molecular dynamics simulations, we analyze the effect of surface temperature and morphology on the yield of self-sputtering of copper… ▽ More Self-sputtering of copper under high electric fields is considered to contribute to plasma buildup during a vacuum breakdown event frequently observed near metal surfaces, even in ultra high vacuum condition in different electric devices. In this study, by means of molecular dynamics simulations, we analyze the effect of surface temperature and morphology on the yield of self-sputtering of copper with ion energies of 0.1-5 keV. We analyze all three low-index surfaces of Cu, {100}, {110} and {111}, held at different temperatures, 300 K, 500 K and 1200 K. The surface roughness relief is studied by either varying the angle of incidence on flat surfaces, or by using arbitrary roughened surfaces, which result in a more natural distribution of surface relief variations. Our simulations provide detailed characterization of copper self-sputtering with respect to different material temperatures, crystallographic orientations, surface roughness, energies, and angles of ion incidence. △ Less

Submitted 10 November, 2017; v1 submitted 10 August, 2017; originally announced August 2017.

Comments: The published version of this paper can be found here: https://doi.org/10.1016/j.nimb.2017.11.001

Journal ref: Nuclear Inst. and Methods in Physics Research, B 415C (2018) pp. 31-40

Migration barriers for surface diffusion on a rigid lattice: challenges and solutions

Authors: Ekaterina Baibuz, Simon Vigonski, Jyri Lahtinen, Junlei Zhao, Ville Jansson, Vahur Zadin, Flyura Djurabekova

Abstract: Atomistic rigid lattice Kinetic Monte Carlo is an efficient method for simulating nano-objects and surfaces at timescales much longer than those accessible by molecular dynamics. A laborious part of constructing any Kinetic Monte Carlo model is, however, to calculate all migration barriers that are needed to give the probabilities for any atom jump event to occur in the simulations. One of the com… ▽ More Atomistic rigid lattice Kinetic Monte Carlo is an efficient method for simulating nano-objects and surfaces at timescales much longer than those accessible by molecular dynamics. A laborious part of constructing any Kinetic Monte Carlo model is, however, to calculate all migration barriers that are needed to give the probabilities for any atom jump event to occur in the simulations. One of the common methods of barrier calculations is Nudged Elastic Band. The number of barriers needed to fully describe simulated systems is typically between hundreds of thousands and millions. Calculations of such a large number of barriers of various processes is far from trivial. In this paper, we will discuss the challenges arising during barriers calculations on a surface and present a systematic and reliable tethering force approach to construct a rigid lattice barrier parameterization of face-centred and body-centred cubic metal lattices. We have produced several different barrier sets for Cu and for Fe that can be used for KMC simulations of processes on arbitrarily rough surfaces. The sets are published as Data in Brief articles and available for the use. △ Less

Submitted 13 March, 2018; v1 submitted 18 July, 2017; originally announced July 2017.

Journal ref: Computational Materials Science, Volume 146, 15 April 2018, Pages 287-302

Dynamic coupling of a finite element solver to large-scale atomistic simulations

Authors: Mihkel Veske, Andreas Kyritsakis, Kristjan Eimre, Vahur Zadin, Alvo Aabloo, Flyura Djurabekova

Abstract: We propose a method for efficiently coupling the finite element method with atomistic simulations, while using molecular dynamics or kinetic Monte Carlo techniques. Our method can dynamically build an optimized unstructured mesh that follows the geometry defined by atomistic data. On this mesh, different multiphysics problems can be solved to obtain distributions of physical quantities of interest… ▽ More We propose a method for efficiently coupling the finite element method with atomistic simulations, while using molecular dynamics or kinetic Monte Carlo techniques. Our method can dynamically build an optimized unstructured mesh that follows the geometry defined by atomistic data. On this mesh, different multiphysics problems can be solved to obtain distributions of physical quantities of interest, which can be fed back to the atomistic system. The simulation flow is optimized to maximize computational efficiency while maintaining good accuracy. This is achieved by providing the modules for a) optimization of the density of the generated mesh according to requirements of a specific geometry and b) efficient extension of the finite element domain without a need to extend the atomistic one. Our method is organized as an open-source C++ code. In the current implementation, an efficient Laplace equation solver for calculation of electric field distribution near rough atomistic surface demonstrates the capability of the suggested approach. △ Less

Submitted 19 January, 2018; v1 submitted 29 June, 2017; originally announced June 2017.

Comments: 25 pages, 14 figures

Local segregation versus irradiation effects in high-entropy alloys: Steady-state conditions in a driven system

Authors: Leonie Koch, Fredric Granberg, Tobias Brink, Daniel Utt, Karsten Albe, Flyura Djurabekova, Kai Nordlund

Abstract: We study order transitions and defect formation in a model high-entropy alloy (CuNiCoFe) under ion irradiation by means of molecular dynamics simulations. Using a hybrid Monte-Carlo/molecular dynamics scheme a model alloy is generated which is thermodynamically stabilized by configurational entropy at elevated temperatures, but partly decomposes at lower temperatures by copper precipation. Both th… ▽ More We study order transitions and defect formation in a model high-entropy alloy (CuNiCoFe) under ion irradiation by means of molecular dynamics simulations. Using a hybrid Monte-Carlo/molecular dynamics scheme a model alloy is generated which is thermodynamically stabilized by configurational entropy at elevated temperatures, but partly decomposes at lower temperatures by copper precipation. Both the high-entropy and the multiphase sample are then subjected to simulated particle irradiation. The damage accumulation is analyzed and compared to an elemental Ni reference system. The results reveal that the high-entropy alloy---independent of the initial configuration---installs a certain fraction of short-range order even under particle irradiation. Moreover, the results provide evidence that defect accumulation is reduced in the high-entropy alloy. This is because the reduced mobility of point defects leads to a steady state of defect creation and annihilation. The lattice defects generated by irradiation are shown to act as sinks for Cu segregation. △ Less

Submitted 4 October, 2017; v1 submitted 10 April, 2017; originally announced April 2017.

Comments: 29 pages, 20 figures

Journal ref: J. Appl. Phys. 122, 105106 (2017)

Directional Sensitivity In Light-Mass Dark Matter Searches With Single-Electron Resolution Ionization Detectors

Authors: Fedja Kadribasic, Nader Mirabolfathi, Kai Nordlund, Andrea E. Sand, E. Holmström, Flyura Djurabekova

Abstract: We propose a method using solid state detectors with directional sensitivity to dark matter interactions to detect low-mass Weakly Interacting Massive Particles (WIMPs) originating from galactic sources. In spite of a large body of literature for high-mass WIMP detectors with directional sensitivity, no available technique exists to cover WIMPs in the mass range <1 GeV. We argue that single-electr… ▽ More We propose a method using solid state detectors with directional sensitivity to dark matter interactions to detect low-mass Weakly Interacting Massive Particles (WIMPs) originating from galactic sources. In spite of a large body of literature for high-mass WIMP detectors with directional sensitivity, no available technique exists to cover WIMPs in the mass range <1 GeV. We argue that single-electron resolution semiconductor detectors allow for directional sensitivity once properly calibrated. We examine commonly used semiconductor material response to these low-mass WIMP interactions. △ Less

Submitted 19 March, 2018; v1 submitted 15 March, 2017; originally announced March 2017.

Comments: Most recent version

Journal ref: Phys. Rev. Lett. 120, 111301 (2018)

A general computational method for electron emission and thermal effects in field emitting nanotips

Authors: Andreas Kyritsakis, Flyura Djurabekova

Abstract: Electron emission from nanometric size emitters becomes of increasing interest due to its involvement to sharp electron sources, vacuum breakdown phenomena and various other vacuum nanoelectronics applications. The most commonly used theoretical tools for the calculation of electron emission are still nowadays the Fowler-Nordheim and the Richardson-Laue-Dushman equations although it has been shown… ▽ More Electron emission from nanometric size emitters becomes of increasing interest due to its involvement to sharp electron sources, vacuum breakdown phenomena and various other vacuum nanoelectronics applications. The most commonly used theoretical tools for the calculation of electron emission are still nowadays the Fowler-Nordheim and the Richardson-Laue-Dushman equations although it has been shown since the 1990's that they are inadequate for nanometrically sharp emitters or in the intermediate thermal-field regime. In this paper we develop a computational method for the calculation of emission currents and Nottingham heat, which automatically distinguishes among different emission regimes, and implements the appropriate calculation method for each. Our method covers all electron emission regimes (thermal, field and intermediate), aiming to maximize the calculation accuracy while minimizing the computational time. As an example, we implemented it in atomistic simulations of the thermal evolution of Cu nanotips under strong electric fields and found that the predicted behaviour of such nanotips by the developed technique differs significantly from estimations obtained based on the Fowler-Nordheim equation. Finally, we show that our tool can be also successfully applied in the analysis of experimental I-V data. △ Less

Submitted 21 November, 2016; v1 submitted 8 September, 2016; originally announced September 2016.

Journal ref: Computational Materials Science (128), pp. 15 - 21, (2017)

Laser-induced asymmetric faceting and growth of nano-protrusion on a tungsten tip

Authors: Hirofumi Yanagisawa, Vahur Zadin, Karsten Kunze, Christian Hafner, Alvo Aabloo, Dong Eon Kim, Matthias F. Kling, Flyura Djurabekova, Jürg Osterwalder, Walter Wuensch

Abstract: Irradiation of a sharp tungsten tip by a femtosecond laser and exposed to a strong DC electric field led to gradual and reproducible surface modifications. By a combination of field emission microscopy and scanning electron microscopy, we observed asymmetric surface faceting with sub-ten nanometer high steps. The presence of well pronounced faceted features mainly on the laser-exposed side implies… ▽ More Irradiation of a sharp tungsten tip by a femtosecond laser and exposed to a strong DC electric field led to gradual and reproducible surface modifications. By a combination of field emission microscopy and scanning electron microscopy, we observed asymmetric surface faceting with sub-ten nanometer high steps. The presence of well pronounced faceted features mainly on the laser-exposed side implies that the surface modification was driven by a laser-induced transient temperature rise -- on a scale of a couple of picoseconds -- in the tungsten tip apex. Moreover, we identified the formation of a nano-tip a few nanometers high located at one of the corners of a faceted plateau. The results of simulations emulating the experimental conditions, are consistent with the experimental observations. The presented conditions can be used as a new method to fabricate nano-tips of few nm height, which can be used in coherent electron pulses generation. Besides the direct practical application, the results also provide insight into the microscopic mechanisms of light-matter interaction. The apparent growth mechanism of the features may also help to explain the origin of enhanced electron field emission, which leads to vacuum arcs, in high electric-field devices such as radio-frequency particle accelerators. △ Less

Submitted 17 May, 2016; originally announced May 2016.

Comments: 6 figures

Journal ref: APL Photonics 1, 091305 (2016)

Electrodynamics - molecular dynamics simulations of the stability of Cu nanotips under high electric field

Authors: Mihkel Veske, Stefan Parviainen, Vahur Zadin, Alvo Aabloo, Flyura Djurabekova

Abstract: The shape memory effect and pseudoelasticity in Cu nanowires is one possible pair of mechanisms that prevents high aspect ratio nanosized field electron emitters to be stable at room temperature and permits their growth under high electric field. By utilizing hybrid electrodynamics molecular dynamics simulations we show that a global electric field of 1 GV/m or more significantly increases the sta… ▽ More The shape memory effect and pseudoelasticity in Cu nanowires is one possible pair of mechanisms that prevents high aspect ratio nanosized field electron emitters to be stable at room temperature and permits their growth under high electric field. By utilizing hybrid electrodynamics molecular dynamics simulations we show that a global electric field of 1 GV/m or more significantly increases the stability and critical temperature of spontaneous reorientation of nanosized <100> Cu field emitters. We also show that in the studied tips the stabilizing effect of an external applied electric field is an order of magnitude greater than the destabilization caused by the field emission current. We detect the critical temperature of spontaneous reorientation using the tool that spots the changes in crystal structure. The method is compatible with techniques that consider the change in potential energy, has a wider range of applicability and allows pinpointing different stages in the reorientation processes. △ Less

Submitted 21 April, 2016; v1 submitted 4 January, 2016; originally announced January 2016.

Comments: 15 pages, 8 figures

Journal ref: J. Phys. Appl. Phys. 49 215301 (2016)

Long-term stability of Cu surface nanotips

Authors: Ville Jansson, Ekaterina Baibuz, Flyura Djurabekova

Abstract: Sharp nanoscale tips on metal surfaces of electrodes enhance locally applied electric fields. Strongly enhanced electric fields trigger electron field emission and atom evaporation from the apexes of the nanotips. Combined together, these processes may explain electric discharges in form of small local arcs observed near metal surfaces in the presence of electric fields even in ultra high vacuum c… ▽ More Sharp nanoscale tips on metal surfaces of electrodes enhance locally applied electric fields. Strongly enhanced electric fields trigger electron field emission and atom evaporation from the apexes of the nanotips. Combined together, these processes may explain electric discharges in form of small local arcs observed near metal surfaces in the presence of electric fields even in ultra high vacuum conditions. In the present work we investigate the stability of nanoscale tips by means of computer simulations of surface diffusion processes on copper (Cu), the main material of high voltage electronics. We study the stability and life-time of thin Cu surface nanotips at different temperatures in terms of diffusion processes. For this purpose, we have developed a surface Kinetic Monte Carlo (KMC) model where the jump processes are described by tabulated precalculated energy barriers. We show that tall surface features with high aspect ratios can be fairly stable at room temperature. However, the stability was found to depend strongly on the temperature: 13 nm nanotips with the major axes in the <110> crystallographic directions were found to flatten down to half of the original height in less than 100 ns at temperatures close to the melting point, whereas no significant change in the height of these nanotips was observed after 10 $μ$s at room temperature. Moreover, the nanotips built up along the <110> crystallographic directions were found significantly more stable than those oriented in the <100> or <111> crystallographic directions. The proposed KMC model has been found well suited for simulating atomic surfaces processes and was validated against Molecular Dynamics (MD) simulation results via the comparison of the flattening times obtained by both methods. We also note that the KMC simulations were two orders of magnitude computationally faster than the corresponding MD calculations. △ Less

Submitted 23 May, 2016; v1 submitted 27 August, 2015; originally announced August 2015.

Comments: This is an author-created, un-copyedited version of an article accepted for publication/published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/0957-4484/27/26/265708

Journal ref: V Jansson, E Baibuz, F Djurabekova, 2016 Nanotechnology 27 265708