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Magnetic penetration depth of Aluminum thin films
Authors:
David López-Núñez,
Queralt Portell Montserrat,
Gemma Rius,
Elia Bertoldo,
Alba Torras-Coloma,
M. Martínez,
P. Forn-Díaz
Abstract:
We present a study of the superconducting penetration depth $λ$ in aluminum thin films of varying thickness. The range of thicknesses chosen spans from the thin-film regime to the regime approaching bulk behavior. The penetration depths observed range from $λ= 163.3\pm0.4~\rm{nm}$ for the thinnest $20~\rm{nm}$ samples down to $λ= 53.6\pm0.4~\rm{nm}$ for the $200~\rm{nm}$-thick ones. In order to ac…
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We present a study of the superconducting penetration depth $λ$ in aluminum thin films of varying thickness. The range of thicknesses chosen spans from the thin-film regime to the regime approaching bulk behavior. The penetration depths observed range from $λ= 163.3\pm0.4~\rm{nm}$ for the thinnest $20~\rm{nm}$ samples down to $λ= 53.6\pm0.4~\rm{nm}$ for the $200~\rm{nm}$-thick ones. In order to accurately determine $λ$, we performed complementary measurements using the frequency of superconducting $LC$ resonators as well as the resistance of normal-state meanders. Both methods yield comparable results, providing a well-characterized set of values of $λ$ in aluminum in the relevant range for applications in fields such as quantum computing and microwave radiation detector technologies.
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Submitted 23 November, 2023;
originally announced November 2023.
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Superconducting nitridized-aluminum thin films
Authors:
Alba Torras-Coloma,
Leyre Martínez de Olcoz,
Eva Céspedes,
Elia Bertoldo,
David López-Núñez,
Sagar Paul,
Wolfgang Wernsdorfer,
Gemma Rius,
Pol Forn-Díaz
Abstract:
We report the direct observation of superconductivity in nitridized-aluminum thin films. The films are produced by sputtering deposition of aluminum in a controlled mixture of nitrogen diluted in argon. The concentration of applied nitrogen directly determines the properties of the superconducting thin films. We observe samples displaying critical temperatures up to 3.38$\pm$0.01K and resilience t…
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We report the direct observation of superconductivity in nitridized-aluminum thin films. The films are produced by sputtering deposition of aluminum in a controlled mixture of nitrogen diluted in argon. The concentration of applied nitrogen directly determines the properties of the superconducting thin films. We observe samples displaying critical temperatures up to 3.38$\pm$0.01K and resilience to in-plane magnetic fields well above 1T, with good reproducibility of the results. This work represents an unambiguous demonstration of tunable superconductivity in aluminum-based nitridized thin films. Our results put forward nitridized aluminum as a promising material to be employed in superconducting quantum circuits for quantum technology applications.
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Submitted 8 April, 2024; v1 submitted 11 August, 2023;
originally announced August 2023.
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Roadmap for focused ion beam technologies
Authors:
Katja Höflich,
Gerhard Hobler,
Frances I. Allen,
Tom Wirtz,
Gemma Rius,
Lisa McElwee-White,
Arkady V. Krasheninnikov,
Matthias Schmidt,
Ivo Utke,
Nico Klingner,
Markus Osenberg,
Rosa Córdoba,
Flyura Djurabekova,
Ingo Manke,
Philip Moll,
Mariachiara Manoccio,
José Marıa De Teresa,
Lothar Bischoff,
Johann Michler,
Olivier De Castro,
Anne Delobbe,
Peter Dunne,
Oleksandr V. Dobrovolskiy,
Natalie Frese,
Armin Gölzhäuser
, et al. (7 additional authors not shown)
Abstract:
The focused ion beam (FIB) is a powerful tool for the fabrication, modification and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was originally intended for photomask repair in the semiconductor industry, there are now many different types of FIB that are commercially available. These instruments use a range of ion species and are applied broadly in mat…
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The focused ion beam (FIB) is a powerful tool for the fabrication, modification and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was originally intended for photomask repair in the semiconductor industry, there are now many different types of FIB that are commercially available. These instruments use a range of ion species and are applied broadly in materials science, physics, chemistry, biology, medicine, and even archaeology. The goal of this roadmap is to provide an overview of FIB instrumentation, theory, techniques and applications. By viewing FIB developments through the lens of the various research communities, we aim to identify future pathways for ion source and instrumentation development as well as emerging applications, and the scope for improved understanding of the complex interplay of ion-solid interactions. We intend to provide a guide for all scientists in the field that identifies common research interests and will support future fruitful interactions connecting tool development, experiment and theory. While a comprehensive overview of the field is sought, it is not possible to cover all research related to FIB technologies in detail. We give examples of specific projects within the broader context, referencing original works and previous review articles throughout.
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Submitted 6 October, 2023; v1 submitted 31 May, 2023;
originally announced May 2023.
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Investigation of Long Monolayer Graphene Ribbons grown on Graphite Capped 6H-SiC (000-1)
Authors:
N. Camara,
G. Rius,
J-R. Huntzinger,
A. Tiberj,
N. Mestres,
F. Perez-Murano,
P. Godignon,
J. Camassel
Abstract:
We present an investigation of large, isolated, graphene ribbons grown on the C-face of on-axis semi-insulating 6H-SiC wafers. Using a graphite cap to cover the SiC sample, we modify the desorption of the Si species during the Si sublimation process. This results in a better control of the growth kinetics, yielding very long (about 300 microns long, 5 microns wide), homogeneous monolayer graphen…
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We present an investigation of large, isolated, graphene ribbons grown on the C-face of on-axis semi-insulating 6H-SiC wafers. Using a graphite cap to cover the SiC sample, we modify the desorption of the Si species during the Si sublimation process. This results in a better control of the growth kinetics, yielding very long (about 300 microns long, 5 microns wide), homogeneous monolayer graphene ribbons. These ribbons fully occupy unusually large terraces on the step bunched SiC surface, as shown by AFM, optical microscopy and SEM. Raman spectrometry indicates that the thermal stress has been partially relaxed by wrinkles formation, visible in AFM images. In addition, we show that despite the low optical absorption of graphene, optical differential transmission can be successfully used to prove the monolayer character of the ribbons.
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Submitted 27 February, 2009; v1 submitted 23 December, 2008;
originally announced December 2008.
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Early stage formation of graphene on the C-face of 6H-SiC
Authors:
N. Camara,
G. Rius,
J. -R. Huntzinger,
A. Tiberj,
L. Magaud,
N. Mestres,
P. Godignon,
J. Camassel
Abstract:
An investigation of the early stage formation of graphene on the C-face of 6H-SiC is presented. We show that the sublimation of few atomic layers of Si out of the SiC substrate is not homogeneous. In good agreement with the results of theoretical calculations it starts from defective sites, mainly dislocations that define nearly circular flakes, which have a pyramidal, volcano-like, shape with a…
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An investigation of the early stage formation of graphene on the C-face of 6H-SiC is presented. We show that the sublimation of few atomic layers of Si out of the SiC substrate is not homogeneous. In good agreement with the results of theoretical calculations it starts from defective sites, mainly dislocations that define nearly circular flakes, which have a pyramidal, volcano-like, shape with a center chimney where the original defect was located. At higher temperatures, complete conversion occurs but, again, it is not homogeneous. Within the sample surface the intensity of the Raman G and 2D bands, evidences non-homogeneous thickness.
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Submitted 15 December, 2008; v1 submitted 27 October, 2008;
originally announced October 2008.
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Selective epitaxial growth of graphene on SiC
Authors:
N. Camara,
G. Rius,
J. -R. Huntzinger,
A. Tiberj,
N. Mestres,
P. Godignon,
J. Camassel
Abstract:
We present an innovative method of selective epitaxial growth of few layers graphene (FLG) on a pre-patterned SiC substrate. The methods involves, successively, the sputtering of a thin AlN layer on top of a mono-crystalline SiC substrate and, then, patterning it with e-beam lithography (EBL) and wet etching. The sublimation of few atomic layers of Si from the SiC substrate occurs only through t…
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We present an innovative method of selective epitaxial growth of few layers graphene (FLG) on a pre-patterned SiC substrate. The methods involves, successively, the sputtering of a thin AlN layer on top of a mono-crystalline SiC substrate and, then, patterning it with e-beam lithography (EBL) and wet etching. The sublimation of few atomic layers of Si from the SiC substrate occurs only through the selectively etched AlN layer. The presence of the Raman G-band at ~1582 cm-1 in the AlN-free areas is used to validate the concept, it gives absolute evidence of the selective FLG growth.
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Submitted 2 July, 2008; v1 submitted 25 June, 2008;
originally announced June 2008.
