Showing 1–12 of 12 results for author: Gundogdu, K

Quantum Analog of Vibration Isolation: From Room Temperature Superfluorescence to High Temperature Superconductivity

Authors: Kenan Gundogdu, Franky So, Mark L. Brongersma, Melike Biliroglu, Gamze Findik

Abstract: The development and the use of quantum technologies are hindered by a fundamental challenge: Quantum materials exhibit macroscopic quantum properties at extremely low temperatures due to the loss of quantum coherence at elevated temperatures. Here, based on our recent discovery of room temperature superfluorescence in perovskites, we present the Quantum Analog of Vibration Isolation, 'QAVI', model… ▽ More The development and the use of quantum technologies are hindered by a fundamental challenge: Quantum materials exhibit macroscopic quantum properties at extremely low temperatures due to the loss of quantum coherence at elevated temperatures. Here, based on our recent discovery of room temperature superfluorescence in perovskites, we present the Quantum Analog of Vibration Isolation, 'QAVI', model and explain how it protects the quantum phase against dephasing at high temperatures. We then postulate the requirements for observation of macroscopic quantum phenomena at practical temperatures and propose a unified model for all macroscopic quantum phase transitions. We further present the general features of the temperature and density phase diagram of macroscopic quantum phase transitions that are mediated by the QAVI process and identify the similarities observed in the phase diagram of high Tc superconductors. Understanding this fundamental quantum coherence protection mechanism is imperative to accelerate the discovery of high temperature macroscopic quantum phenomena, and offers significant potential for developing quantum technologies functioning under practical conditions. △ Less

Submitted 20 April, 2022; originally announced April 2022.

Comments: 21 pages, 4 figures

Fermi Liquid Theory Sheds Light on "Hot" EHL in 1L-MoS$_2$

Authors: R. L. Wilmington, H. Ardekani, A. Rustagi, A. Bataller, A. F. Kemper, R. A. Younts, K. Gundogdu

Abstract: 2D transition metal dichalcogenides (TMDCs) exhibit an electron-hole liquid phase transition at unusually high temperatures. Because these materials are atomically thin, optical excitation leads to material expansion. As a result, during the EHL phase transition the electronic band structure evolves due to both material thermal expansion and renormalization of the bands under high excitation densi… ▽ More 2D transition metal dichalcogenides (TMDCs) exhibit an electron-hole liquid phase transition at unusually high temperatures. Because these materials are atomically thin, optical excitation leads to material expansion. As a result, during the EHL phase transition the electronic band structure evolves due to both material thermal expansion and renormalization of the bands under high excitation densities. Specifically, these effects lead to indirect gap electronic band structure with a valence band maximum located at the $Γ$ valley. In this work we developed a methodology for analyzing the spectral evolution of the photoluminescence of suspended 1L-MoS$_2$ during the EHL phase transition by using Fermi liquid theory. The resulting analysis reveals valley-specific carrier densities, radiative recombination efficiencies, and intraband carrier relaxation kinetics in 1L-MoS$_2$. More broadly, the results outline a methodology for predicting critical EHL parameters, shedding light onto the EHL phase transition in 2D TDMCs. △ Less

Submitted 19 October, 2020; originally announced October 2020.

Comments: 13 pages, 4 figures, RevTex-4.2

Journal ref: Phys. Rev. B 103, 075416 (2021)

Room-Temperature Electron-Hole Liquid in Monolayer MoS2

Authors: Yiling Yu, Alexander Bataller, Robert Younts, Yifei Yu, Guoqing Li, Alexander A. Puretzky, David B. Geohegan, Kenan Gundogdu, Linyou Cao

Abstract: Excitons in semiconductors are usually non interacting and behave like an ideal gas, but may condense to a strongly correlated liquid like state, i.e. electron hole liquid (EHL), at high density and appropriate temperature. EHL is a macroscopic quantum state with exotic properties and represents the ultimate attainable charge excitation density in steady states. It bears great promise for a variet… ▽ More Excitons in semiconductors are usually non interacting and behave like an ideal gas, but may condense to a strongly correlated liquid like state, i.e. electron hole liquid (EHL), at high density and appropriate temperature. EHL is a macroscopic quantum state with exotic properties and represents the ultimate attainable charge excitation density in steady states. It bears great promise for a variety of fields such as ultrahigh power photonics and quantum science and technology. However, the condensation of gas like excitons to EHL has often been restricted to cryogenic temperatures, which significantly limits the prospect of EHL for use in practical applications. Herein we demonstrate the formation of EHL at room temperature in monolayer MoS2 by taking advantage of the monolayer's extraordinarily strong exciton binding energy. This work demonstrates the potential for the liquid like state of charge excitations to be a useful platform for the studies of macroscopic quantum phenomena and the development of optoelectronic devices. △ Less

Submitted 28 September, 2019; v1 submitted 26 October, 2017; originally announced October 2017.

Enhancing Multifunctionalities of Transition Metal Dichalcogenide Monolayers via Intercalation of Molecules and Ions

Authors: Yifei Yu, Lujun Huang, Guoqing Li, Andrew Barrette, Yong-Qing Cai, Yiling Yu, Kenan Gundogdu, Yong-Wei Zhang, Linyou Cao

Abstract: Transition metal dichalcogenide (TMDC) monolayers present a remarkable multifunctional material with potential to enable the development of a wide range of novel devices. However, the functionalities observed often fall short of the expectation, which hinders the device development. Here we demonstrate that the optical, catalytic, and thermal functionalities of TMDC monolayers can all be substanti… ▽ More Transition metal dichalcogenide (TMDC) monolayers present a remarkable multifunctional material with potential to enable the development of a wide range of novel devices. However, the functionalities observed often fall short of the expectation, which hinders the device development. Here we demonstrate that the optical, catalytic, and thermal functionalities of TMDC monolayers can all be substantially enhanced by up to orders of magnitude with the intercalation of water molecules or small cations (H+ and Li+) between the monolayers and underlying substrates. In contrast, the same molecules or cations adsorbed on top of the monolayers show negligible effects. We also discover two major roles of the intercalated species in the enhancement: doping the monolayers and modifying the interaction of the monolayers with the substrate. The result points out a versatile and convenient strategy of using the intercalation of molecules or ions to enhance the functionalities of TMDC monolayers. △ Less

Submitted 3 March, 2017; v1 submitted 1 March, 2017; originally announced March 2017.

Comments: This paper has been withdrawn due to the incomplete introduction information and reference

Fundamental Limits of Exciton-Exciton Annihilation for Light Emission in Transition Metal Dichalcogenide Monolayers

Authors: Yiling Yu, Yifei Yu, Chao Xu, Andy Barrette, Kenan Gundogdu, Linyou Cao

Abstract: We quantitatively illustrate the fundamental limit that exciton-exciton annihilation (EEA) may impose to the light emission of monolayer transition metal dichalcogenide (TMDC) materials. The EEA in TMDC monolayers shows dependence on the interaction with substrates as its rate increases from 0.1 cm2/s (0.05 cm2/s) to 0.3 cm2/s (0.1 cm2/s) with the substrates removed for WS2 (MoS2) monolayers. It t… ▽ More We quantitatively illustrate the fundamental limit that exciton-exciton annihilation (EEA) may impose to the light emission of monolayer transition metal dichalcogenide (TMDC) materials. The EEA in TMDC monolayers shows dependence on the interaction with substrates as its rate increases from 0.1 cm2/s (0.05 cm2/s) to 0.3 cm2/s (0.1 cm2/s) with the substrates removed for WS2 (MoS2) monolayers. It turns to be the major pathway of exciton decay and dominates the luminescence efficiency when the exciton density is beyond 1010 cm-2 in suspended monolayers or 1011 cm-2 in supported monolayers. This sets an upper limit on the density of injected charges in light emission devices for the realization of optimal luminescence efficiency. The strong EEA rate also dictates the pumping threshold for population inversion in the monolayers to be 12-18 MW/cm2 (optically) or 2.5-4x105 A/cm2 (electrically). △ Less

Submitted 11 April, 2016; v1 submitted 2 December, 2015; originally announced December 2015.

Journal ref: Phys. Rev. B 93, 201111 (2016)

Temperature Dependent Valley Relaxation Dynamics in Single Layer WS2 Measured Using Ultrafast Spectroscopy

Authors: Cong Mai, Yuriy G. Semenov, Andrew Barrette, Yifei Yu, Zhenghe Jin, Linyou Cao, Ki Wook Kim, Kenan Gundogdu

Abstract: We measured the lifetime of optically created valley polarization in single layer WS2 using transient absorption spectroscopy. The electron valley relaxation is very short (< 1ps). However the hole valley lifetime is at least two orders of magnitude longer and exhibits a temperature dependence that cannot be explained by single carrier spin/valley relaxation mechanisms. Our theoretical analysis su… ▽ More We measured the lifetime of optically created valley polarization in single layer WS2 using transient absorption spectroscopy. The electron valley relaxation is very short (< 1ps). However the hole valley lifetime is at least two orders of magnitude longer and exhibits a temperature dependence that cannot be explained by single carrier spin/valley relaxation mechanisms. Our theoretical analysis suggests that a collective contribution of two potential processes may explain the valley relaxation in single layer WS2. One process involves direct scattering of excitons from K to K' valleys with a spin flip-flop interaction. The other mechanism involves scattering through spin degenerate Gamma valley. This second process is thermally activated with an Arrhenius behavior due to the energy barrier between Gamma and K valleys. △ Less

Submitted 20 May, 2014; originally announced May 2014.

Journal ref: Phys. Rev. B 90, 041414 (2014)

The effect of p-type doping on the oxidation of H-Si(111) studied by second-harmonic generation

Authors: Bilal Gokce, Daniel B. Dougherty, Kenan Gundogdu

Abstract: Atomic force microscopy and second-harmonic generation data show that boron doping enhances the rate of oxidation of H-terminated silicon. Holes cause a greater increase in the reactivity of the Si-H up bonds than that of the Si-Si back bonds. Atomic force microscopy and second-harmonic generation data show that boron doping enhances the rate of oxidation of H-terminated silicon. Holes cause a greater increase in the reactivity of the Si-H up bonds than that of the Si-Si back bonds. △ Less

Submitted 7 September, 2011; originally announced September 2011.

Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping

Authors: Bilal Gokce, David E. Aspnes, Gerald Lucovsky, Kenan Gundogdu

Abstract: It is known that a higher concentration of free carriers leads to a higher oxide growth rate in the thermal oxidation of silicon. However, the role of electrons and holes in oxidation chemistry is not clear. Here, we report real-time second-harmonic-generation data on the oxidation of H-terminated (111)Si that reveal that high concentrations of electrons increase the chemical reactivity of the out… ▽ More It is known that a higher concentration of free carriers leads to a higher oxide growth rate in the thermal oxidation of silicon. However, the role of electrons and holes in oxidation chemistry is not clear. Here, we report real-time second-harmonic-generation data on the oxidation of H-terminated (111)Si that reveal that high concentrations of electrons increase the chemical reactivity of the outer-layer Si-Si back bonds relative to the Si-H up bonds. However, the thicknesses of the natural oxides of all samples stabilize near 1 nm at room temperature, regardless of the chemical kinetics of the different bonds. △ Less

Submitted 19 November, 2010; originally announced November 2010.

Comments: 9 pages, 3 figures

Real-time observation of bond-by-bond interface formation during the oxidation of (111) Si

Authors: B. Gokce, E. J. Adles, D. E. Aspnes, K. Gundogdu

Abstract: Atomic-level structure of solids is typically determined by techniques such as X-ray and electron diffraction,1, 2, 3, 4 which are sensitive to atomic positions. It is hardly necessary to mention the impact that these techniques have had on almost every field of science. However, the bonds between atoms are critical for determining the overall structure. The dynamics of these bonds have been diff… ▽ More Atomic-level structure of solids is typically determined by techniques such as X-ray and electron diffraction,1, 2, 3, 4 which are sensitive to atomic positions. It is hardly necessary to mention the impact that these techniques have had on almost every field of science. However, the bonds between atoms are critical for determining the overall structure. The dynamics of these bonds have been difficult to quantify. Here, we combine second-harmonic generation and the bond-charge model of nonlinear optics5, 6 to probe, in real time, the dynamics of bond-by-bond chemical changes during the oxidation of H-terminated (111)Si, a surface that has been well characterized by static methods. We thus demonstrate that our approach provides new information about this exhaustively studied system. For example, oxidation is activated by a surprisingly small applied macroscopic strain, and exhibits anisotropic kinetics with one of the three equivalent back-bonds of on-axis samples reacting differently from the other two. Anisotropic oxidation kinetics also leads to observed transient changes in bond directions. By comparing results for surfaces strained in different directions, we find that in-plane control of surface chemistry is possible. The use of nonlinear optics as a bond-specific characterization tool is readily adaptable for studying structural and chemical dynamics in many other condensed-matter systems. △ Less

Submitted 19 April, 2010; v1 submitted 10 February, 2010; originally announced February 2010.

Comments: 15 pages, 4 figures

Efficient electron spin detection with positively charged quantum dots

Authors: K. Gundogdu, K. C. Hall, Thomas F. Boggess, O. B. Shchekin, D. G. Deppe

Abstract: We report the application of time- and polarization-resolved photoluminescence up-conversion spectroscopy to the study of spin capture and energy relaxation in positively and negatively charged, as well as neutral, InAs self-assembled quantum dots. When compared to the neutral dots, we find that carrier capture and relaxation to the ground state is much faster in the highly charged dots, suggest… ▽ More We report the application of time- and polarization-resolved photoluminescence up-conversion spectroscopy to the study of spin capture and energy relaxation in positively and negatively charged, as well as neutral, InAs self-assembled quantum dots. When compared to the neutral dots, we find that carrier capture and relaxation to the ground state is much faster in the highly charged dots, suggesting that electron-hole scattering dominates this process. The long spin lifetime, short capture time, and high radiative efficiency of the positively charged dots, indicates that these structures are superior to both quantum well and neutral quantum dot light-emitting diode (LED) spin detectors for spintronics applications. △ Less

Submitted 2 November, 2003; originally announced November 2003.

Non-magnetic semiconductor spin transistor

Authors: K. C. Hall, Wayne H. Lau, K. Gundogdu, Michael E. Flatte, Thomas F. Boggess

Abstract: We propose a spin transistor using only non-magnetic materials that exploits the characteristics of bulk inversion asymmetry (BIA) in (110) symmetric quantum wells. We show that extremely large spin splittings due to BIA are possible in (110) InAs/GaSb/AlSb heterostructures, which together with the enhanced spin decay times in (110) quantum wells demonstrates the potential for exploitation of BI… ▽ More We propose a spin transistor using only non-magnetic materials that exploits the characteristics of bulk inversion asymmetry (BIA) in (110) symmetric quantum wells. We show that extremely large spin splittings due to BIA are possible in (110) InAs/GaSb/AlSb heterostructures, which together with the enhanced spin decay times in (110) quantum wells demonstrates the potential for exploitation of BIA effects in semiconductor spintronics devices. Spin injection and detection is achieved using spin-dependent resonant interband tunneling and spin transistor action is realized through control of the electron spin lifetime in an InAs lateral transport channel using an applied electric field (Rashba effect). This device may also be used as a spin valve, or a magnetic field sensor. The electronic structure and spin relaxation times for the spin transistor proposed here are calculated using a nonperturbative 14-band k.p nanostructure model. △ Less

Submitted 28 July, 2003; originally announced July 2003.

Comments: Accepted for publication in Applied Physics Letters

Spin relaxation in (110) and (001) InAs/GaSb superlattices

Authors: K. C. Hall, K. Gundogdu, E. Altunkaya, W. H. Lau, Michael E. Flatte, Thomas F. Boggess, J. J. Zinck, W. B. Barvosa-Carter, S. L. Skeith

Abstract: We report an enhancement of the electron spin relaxation time (T1) in a (110) InAs/GaSb superlattice by more than an order of magnitude (25 times) relative to the corresponding (001) structure. The spin dynamics were measured using polarization sensitive pump probe techniques and a mid-infrared, subpicosecond PPLN OPO. Longer T1 times in (110) superlattices are attributed to the suppression of t… ▽ More We report an enhancement of the electron spin relaxation time (T1) in a (110) InAs/GaSb superlattice by more than an order of magnitude (25 times) relative to the corresponding (001) structure. The spin dynamics were measured using polarization sensitive pump probe techniques and a mid-infrared, subpicosecond PPLN OPO. Longer T1 times in (110) superlattices are attributed to the suppression of the native interface asymmetry and bulk inversion asymmetry contributions to the precessional D'yakonov Perel spin relaxation process. Calculations using a nonperturbative 14-band nanostructure model give good agreement with experiment and indicate that possible structural inversion asymmetry contributions to T1 associated with compositional mixing at the superlattice interfaces may limit the observed spin lifetime in (110) superlattices. Our findings have implications for potential spintronics applications using InAs/GaSb heterostructures. △ Less

Submitted 7 January, 2003; originally announced January 2003.

Comments: 4 pages, 2 figures