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Autonomous synthesis of thin film materials with pulsed laser deposition enabled by in situ spectroscopy and automation
Authors:
Sumner B. Harris,
Arpan Biswas,
Seok Joon Yun,
Christopher M. Rouleau,
Alexander A. Puretzky,
Rama K. Vasudevan,
David B. Geohegan,
Kai Xiao
Abstract:
Synthesis of thin films has traditionally relied upon slow, sequential processes carried out with substantial human intervention, frequently utilizing a mix of experience and serendipity to optimize material structure and properties. With recent advances in autonomous systems which combine synthesis, characterization, and decision making with artificial intelligence (AI), large parameter spaces ca…
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Synthesis of thin films has traditionally relied upon slow, sequential processes carried out with substantial human intervention, frequently utilizing a mix of experience and serendipity to optimize material structure and properties. With recent advances in autonomous systems which combine synthesis, characterization, and decision making with artificial intelligence (AI), large parameter spaces can be explored autonomously at rates beyond what is possible by human experimentalists, greatly accelerating discovery, optimization, and understanding in materials synthesis which directly address the grand challenges in synthesis science. Here, we demonstrate autonomous synthesis of a contemporary 2D material by combining the highly versatile pulsed laser deposition (PLD) technique with automation and machine learning (ML). We incorporated in situ and real-time spectroscopy, a high-throughput methodology, and cloud connectivity to enable autonomous synthesis workflows with PLD. Ultrathin WSe2 films were grown using co-ablation of two targets and showed a 10x increase in throughput over traditional PLD workflows. Gaussian process regression and Bayesian optimization were used with in situ Raman spectroscopy to autonomously discover two distinct growth windows and the process-property relationship after sampling only 0.25% of a large 4D parameter space. Any material that can be grown with PLD could be autonomously synthesized with our platform and workflows, enabling accelerated discovery and optimization of a vast number of materials.
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Submitted 16 August, 2023;
originally announced August 2023.
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Nearly-Resonant Crystalline-Phononic Coupling in Quantum Spin Liquid Candidate CsYbSe$_2$
Authors:
Yun-Yi Pai,
Claire E. Marvinney,
Liangbo Liang,
Jie Xing,
Allen Scheie,
Alexander A. Puretzky,
Gábor B. Halász,
Xun Li,
Rinkle Juneja,
Athena S. Sefat,
David Parker,
Lucas Lindsay,
Benjamin J. Lawrie
Abstract:
CsYbSe$_2$, a recently identified quantum spin liquid (QSL) candidate, exhibits strong crystal electric field (CEF) excitations. Here, we identify phonon and CEF modes with Raman spectroscopy and observe strong CEF-phonon mixing resulting in a vibronic bound state. Complex, mesoscale interplay between phonon modes and CEF modes is observed in real space, and an unexpected nearly resonant condition…
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CsYbSe$_2$, a recently identified quantum spin liquid (QSL) candidate, exhibits strong crystal electric field (CEF) excitations. Here, we identify phonon and CEF modes with Raman spectroscopy and observe strong CEF-phonon mixing resulting in a vibronic bound state. Complex, mesoscale interplay between phonon modes and CEF modes is observed in real space, and an unexpected nearly resonant condition is satisfied, yielding up to fifth-order combination modes, with a total of 17 modes identified in the spectra. This study paves the way to coherent control of possible QSL ground states with optically accessible CEF-phonon manifolds and mesoscale engineering of CEF-phonon interactions.
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Submitted 20 November, 2021; v1 submitted 6 November, 2021;
originally announced November 2021.
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Phonon modes and Raman signatures of MnBi2nTe3n+1 (n=1,2,3,4) magnetic topological heterostructures
Authors:
Yujin Cho,
Jin Ho Kang,
Liangbo Liang,
Xiangru Kong,
Subhajit Ghosh,
Fariborz Kargar,
Chaowei Hu,
Alexander A. Balandin,
Alexander A. Puretzky,
Ni Ni,
Chee Wei Wong
Abstract:
An intrinsic antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$ can be realized by intercalating Mn-Te bilayer chain in a topological insulator, $\mathrm{Bi_2Te_3}$. $\mathrm{MnBi_2Te_4}$ provides not only a stable platform to demonstrate exotic physical phenomena, but also easy tunability of the physical properties. For example, inserting more $\mathrm{Bi_2Te_3}$ layers in between two…
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An intrinsic antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$ can be realized by intercalating Mn-Te bilayer chain in a topological insulator, $\mathrm{Bi_2Te_3}$. $\mathrm{MnBi_2Te_4}$ provides not only a stable platform to demonstrate exotic physical phenomena, but also easy tunability of the physical properties. For example, inserting more $\mathrm{Bi_2Te_3}$ layers in between two adjacent $\mathrm{MnBi_2Te_4}$ weakens the interlayer magnetic interactions between the $\mathrm{MnBi_2Te_4}$ layers. Here we present the first observations on the inter- and intra-layer phonon modes of $\mathrm{MnBi_{2n}Te_{3n+1}}$ (n=1,2,3,4) using cryogenic low-frequency Raman spectroscopy. We experimentally and theoretically distinguish the Raman vibrational modes using various polarization configurations. The two peaks at 66 cm$^{-1}$ and 112 cm$^{-1}$ show an abnormal perturbation in the Raman linewidths below the magnetic transition temperature due to spin-phonon coupling. In $\mathrm{MnBi_4Te_7}$, the $\mathrm{Bi_2Te_3}$ layers induce Davydov splitting of the A$_{1g}$ mode around 137 cm$^{-1}$ at 5 K. Using the linear chain model, we estimate the out-of-plane interlayer force constant to be $(3.98 \pm 0.14) \times 10^{19}$ N/m$^3$ at 5 K, three times weaker than that of $\mathrm{Bi_2Te_3}$. Our work discovers the dynamics of phonon modes of the $\mathrm{MnBi_2Te_4}$ and the effect of the additional $\mathrm{Bi_2Te_3}$ layers, providing the first-principles guidance to tailor the physical properties of layered heterostructures.
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Submitted 26 July, 2021; v1 submitted 7 July, 2021;
originally announced July 2021.
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Fluctuation-driven, topology-stabilized order in a correlated nodal semimetal
Authors:
Nathan C. Drucker,
Thanh Nguyen,
Fei Han,
Xi Luo,
Nina Andrejevic,
Ziming Zhu,
Grigory Bednik,
Quynh T. Nguyen,
Zhantao Chen,
Linh K. Nguyen,
Travis J. Williams,
Matthew B. Stone,
Alexander I. Kolesnikov,
Songxue Chi,
Jaime Fernandez-Baca,
Tom Hogan,
Ahmet Alatas,
Alexander A. Puretzky,
David B. Geohegan,
Shengxi Huang,
Yue Yu,
Mingda Li
Abstract:
The interplay between strong electron correlation and band topology is at the forefront of condensed matter research. As a direct consequence of correlation, magnetism enriches topological phases and also has promising functional applications. However, the influence of topology on magnetism remains unclear, and the main research effort has been limited to ground state magnetic orders. Here we repo…
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The interplay between strong electron correlation and band topology is at the forefront of condensed matter research. As a direct consequence of correlation, magnetism enriches topological phases and also has promising functional applications. However, the influence of topology on magnetism remains unclear, and the main research effort has been limited to ground state magnetic orders. Here we report a novel order above the magnetic transition temperature in magnetic Weyl semimetal (WSM) CeAlGe. Such order shows a number of anomalies in electrical and thermal transport, and neutron scattering measurements. We attribute this order to the coupling of Weyl fermions and magnetic fluctuations originating from a three-dimensional Seiberg-Witten monopole, which qualitatively agrees well with the observations. Our work reveals a prominent role topology may play in tailoring electron correlation beyond ground state ordering, and offers a new avenue to investigate emergent electronic properties in magnetic topological materials.
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Submitted 19 July, 2023; v1 submitted 15 March, 2021;
originally announced March 2021.
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Photochromism in a Hexagonal Boron Nitride Single Photon Emitter
Authors:
Matthew A. Feldman,
Claire E. Marvinney,
Alexander A. Puretzky,
Benjamin J. Lawrie
Abstract:
Solid-state single-photon emitters (SPEs) such as the bright, stable, room-temperature defects within hexagonal boron nitride (hBN) are of increasing interest for quantum information science applications. To date, the atomic and electronic origins of SPEs within hBN are not well understood, and no studies have reported photochromism or explored cross-correlations between hBN SPEs. Here, we combine…
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Solid-state single-photon emitters (SPEs) such as the bright, stable, room-temperature defects within hexagonal boron nitride (hBN) are of increasing interest for quantum information science applications. To date, the atomic and electronic origins of SPEs within hBN are not well understood, and no studies have reported photochromism or explored cross-correlations between hBN SPEs. Here, we combine irradiation-time dependent measures of quantum efficiency and microphotoluminescence ($μ$PL) spectroscopy with two-color Hanbury Brown-Twiss interferometry to enable an investigation of the electronic structure of hBN defects. We identify photochromism in a hBN SPE that exhibits cross-correlations and correlated quantum efficiencies between the emission of its two zero-phonon lines.
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Submitted 15 September, 2020; v1 submitted 12 August, 2020;
originally announced August 2020.
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Signature of Many-Body Localization of Phonons in Strongly Disordered Superlattices
Authors:
Thanh Nguyen,
Nina Andrejevic,
Hoi Chun Po,
Qichen Song,
Yoichiro Tsurimaki,
Nathan C. Drucker,
Ahmet Alatas,
Ercan E. Alp,
Bogdan M. Leu,
Alessandro Cunsolo,
Yong Q. Cai,
Lijun Wu,
Joseph A. Garlow,
Yimei Zhu,
Hong Lu,
Arthur C. Gossard,
Alexander A. Puretzky,
David B. Geohegan,
Shengxi Huang,
Mingda Li
Abstract:
Many-body localization (MBL) has attracted significant attention due to its immunity to thermalization, role in logarithmic entanglement entropy growth, and opportunities to reach exotic quantum orders. However, experimental realization of MBL in solid-state systems has remained challenging. Here we report evidence of a possible phonon MBL phase in disordered GaAs/AlAs superlattices. Through grazi…
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Many-body localization (MBL) has attracted significant attention due to its immunity to thermalization, role in logarithmic entanglement entropy growth, and opportunities to reach exotic quantum orders. However, experimental realization of MBL in solid-state systems has remained challenging. Here we report evidence of a possible phonon MBL phase in disordered GaAs/AlAs superlattices. Through grazing-incidence inelastic X-ray scattering, we observe a strong deviation of the phonon population from equilibrium in samples doped with ErAs nanodots at low temperature, signaling a departure from thermalization. This behavior occurs within finite phonon energy and wavevector windows, suggesting a localization-thermalization crossover. We support our observation by proposing a theoretical model for the effective phonon Hamiltonian in disordered superlattices, and showing that it can be mapped exactly to a disordered 1D Bose-Hubbard model with a known MBL phase. Our work provides momentum-resolved experimental evidence of phonon localization, extending the scope of MBL to disordered solid-state systems.
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Submitted 14 September, 2021; v1 submitted 5 August, 2020;
originally announced August 2020.
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Room-Temperature Electron-Hole Liquid in Monolayer MoS2
Authors:
Yiling Yu,
Alexander Bataller,
Robert Younts,
Yifei Yu,
Guoqing Li,
Alexander A. Puretzky,
David B. Geohegan,
Kenan Gundogdu,
Linyou Cao
Abstract:
Excitons in semiconductors are usually non interacting and behave like an ideal gas, but may condense to a strongly correlated liquid like state, i.e. electron hole liquid (EHL), at high density and appropriate temperature. EHL is a macroscopic quantum state with exotic properties and represents the ultimate attainable charge excitation density in steady states. It bears great promise for a variet…
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Excitons in semiconductors are usually non interacting and behave like an ideal gas, but may condense to a strongly correlated liquid like state, i.e. electron hole liquid (EHL), at high density and appropriate temperature. EHL is a macroscopic quantum state with exotic properties and represents the ultimate attainable charge excitation density in steady states. It bears great promise for a variety of fields such as ultrahigh power photonics and quantum science and technology. However, the condensation of gas like excitons to EHL has often been restricted to cryogenic temperatures, which significantly limits the prospect of EHL for use in practical applications. Herein we demonstrate the formation of EHL at room temperature in monolayer MoS2 by taking advantage of the monolayer's extraordinarily strong exciton binding energy. This work demonstrates the potential for the liquid like state of charge excitations to be a useful platform for the studies of macroscopic quantum phenomena and the development of optoelectronic devices.
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Submitted 28 September, 2019; v1 submitted 26 October, 2017;
originally announced October 2017.
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Interlayer bond polarizability model for stacking-dependent low-frequency Raman scattering in layered materials
Authors:
Liangbo Liang,
Alexander A. Puretzky,
Bobby G. Sumpter,
Vincent Meunier
Abstract:
Two-dimensional (2D) layered materials have been extensively studied owing to their fascinating and technologically relevant properties. Their functionalities can be often tailored by the interlayer stacking pattern. Low-frequency (LF) Raman spectroscopy provides a quick, non-destructive and inexpensive optical technique for stacking characterization, since the intensities of LF interlayer vibrati…
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Two-dimensional (2D) layered materials have been extensively studied owing to their fascinating and technologically relevant properties. Their functionalities can be often tailored by the interlayer stacking pattern. Low-frequency (LF) Raman spectroscopy provides a quick, non-destructive and inexpensive optical technique for stacking characterization, since the intensities of LF interlayer vibrational modes are sensitive to the details of the stacking. A simple and generalized interlayer bond polarizability model is proposed here to explain and predict how the LF Raman intensities depend on complex stacking sequences for any thickness in a broad array of 2D materials, including graphene, MoS2, MoSe2, NbSe2, Bi2Se3, GaSe, h-BN, etc. Additionally, a general strategy is proposed to unify the stacking nomenclature for these 2D materials. Our model reveals the fundamental mechanism of LF Raman response to the stacking, and provides general rules for stacking identification.
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Submitted 8 August, 2017;
originally announced August 2017.
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Phonon Localization in Heat Conduction
Authors:
Maria N. Luckyanova,
Jonathan Mendoza,
Hong Lu,
Shengxi Huang,
Jiawei Zhou,
Mingda Li,
Brian J. Kirby,
Alexander J. Grutter,
Alexander A. Puretzky,
Millie S. Dresselhaus,
Arthur Gossard,
Gang Chen
Abstract:
Departures in phonon heat conduction from diffusion have been extensively observed in nanostructures through their thermal conductivity reduction and largely explained with classical size effects neglecting phonon's wave nature. Here, we report localization-behavior in phonon heat conduction due to multiple scattering and interference of phonon waves, observed through measurements of the thermal c…
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Departures in phonon heat conduction from diffusion have been extensively observed in nanostructures through their thermal conductivity reduction and largely explained with classical size effects neglecting phonon's wave nature. Here, we report localization-behavior in phonon heat conduction due to multiple scattering and interference of phonon waves, observed through measurements of the thermal conductivities of GaAs/AlAs superlattices with ErAs nanodots randomly distributed at the interfaces. Near room temperature, the measured thermal conductivities increased with increasing number of SL periods and eventually saturated, indicating a transition from ballistic-to-diffusive transport. At low temperatures, the thermal conductivities of the samples with ErAs dots first increased and then decreased with an increasing number of periods, signaling phonon wave localization. This Anderson localization behavior is also validated via atomistic Green's function simulations. The observation of phonon localization in heat conduction is surprising due to the broadband nature of thermal transport. This discovery suggests a new path forward for engineering phonon thermal transport.
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Submitted 16 February, 2016;
originally announced February 2016.
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Observation of Low-frequency Interlayer Breathing Modes in Few-layer Black Phosphorus
Authors:
Xi Ling,
Liangbo Liang,
Shengxi Huang,
Alexander A. Puretzky,
David B. Geohegan,
Bobby G. Sumpter,
Jing Kong,
Vincent Meunier,
Mildred S. Dresselhaus
Abstract:
As a new two-dimensional layered material, black phosphorus (BP) is a promising material for nanoelectronics and nano-optoelectronics. We use Raman spectroscopy and first-principles theory to report our findings related to low-frequency (LF) interlayer breathing modes (<100 cm-1) in few-layer BP for the first time. The breathing modes are assigned to Ag symmetry by the laser polarization dependenc…
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As a new two-dimensional layered material, black phosphorus (BP) is a promising material for nanoelectronics and nano-optoelectronics. We use Raman spectroscopy and first-principles theory to report our findings related to low-frequency (LF) interlayer breathing modes (<100 cm-1) in few-layer BP for the first time. The breathing modes are assigned to Ag symmetry by the laser polarization dependence study and group theory analysis. Compared to the high-frequency (HF) Raman modes, the LF breathing modes are much more sensitive to interlayer coupling and thus their frequencies show much stronger dependence on the number of layers. Hence, they could be used as effective means to probe both the crystalline orientation and thickness for few-layer BP. Furthermore, the temperature dependence study shows that the breathing modes have a harmonic behavior, in contrast to HF Raman modes which are known to exhibit anharmonicity.
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Submitted 26 February, 2015;
originally announced February 2015.
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Investigation of Gd3N@C2n (40 < n < 44) family by Raman and inelastic electron tunneling spectroscopy
Authors:
Brian G. Burke,
Jack Chan,
Keith A. Williams,
Jiechao Ge,
Chunying Shu,
Wujun Fu,
Harry C. Dorn,
James G. Kushmerick,
Alexander A. Puretzky,
David B. Geohegan
Abstract:
The structure and vibrational spectrum of Gd3N@C80 is studied through Raman and inelastic electron tunneling spectroscopy (IETS) as well as density functional theory (DFT) and universal force field (UFF) calculations. Hindered rotations, shown by both theory and experiment, indicate the formation of a Gd3N-C80 bond which reduces the ideal icosahedral symmetry of the C80 cage. The vibrational mod…
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The structure and vibrational spectrum of Gd3N@C80 is studied through Raman and inelastic electron tunneling spectroscopy (IETS) as well as density functional theory (DFT) and universal force field (UFF) calculations. Hindered rotations, shown by both theory and experiment, indicate the formation of a Gd3N-C80 bond which reduces the ideal icosahedral symmetry of the C80 cage. The vibrational modes involving the movement of the encapsulated species are a fingerprint of the interaction between the fullerene cage and the core complex. We present Raman data for the Gd3N@C2n (40 < n < 44) family as well as Y3N@C80, Lu3N@C80, and Y3N@C88 for comparison. Conductance measurements have been performed on Gd3N@C80 and reveal a Kondo effect similar to that observed in C60.
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Submitted 27 October, 2009;
originally announced October 2009.
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Raman study of Fano interference in p-type doped silicon
Authors:
Brian G. Burke,
Jack Chan,
Keith A. Williams,
Zili Wu,
Alexander A. Puretzky,
David B. Geohegan
Abstract:
As the silicon industry continues to push the limits of device dimensions, tools such as Raman spectroscopy are ideal to analyze and characterize the doped silicon channels. The effect of inter-valence band transitions on the zone center optical phonon in heavily p-type doped silicon is studied by Raman spectroscopy for a wide range of excitation wavelengths extending from the red (632.8 nm) int…
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As the silicon industry continues to push the limits of device dimensions, tools such as Raman spectroscopy are ideal to analyze and characterize the doped silicon channels. The effect of inter-valence band transitions on the zone center optical phonon in heavily p-type doped silicon is studied by Raman spectroscopy for a wide range of excitation wavelengths extending from the red (632.8 nm) into the ultra-violet (325 nm). The asymmetry in the one-phonon Raman lineshape is attributed to a Fano interference involving the overlap of a continuum of electronic excitations with a discrete phonon state. We identify a transition above and below the one-dimensional critical point (E = 3.4 eV) in the electronic excitation spectrum of silicon. The relationship between the anisotropic silicon band structure and the penetration depth is discussed in the context of possible device applications.
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Submitted 27 October, 2009;
originally announced October 2009.
