Showing 1–50 of 79 results for author: Han, F

Topological Phase Transition in Quasi-One-Dimensional Bismuth Iodide Bi4I4

Authors: W. X. Zhao, M. Yang, X. Du, Y. D. Li, K. Y. Zhai, Y. Q. Hu, J. F. Han, Y. Huang, Z. K. Liu, Y. G. Yao, J. C. Zhuang, Y. Du, J. J. Zhou, Y. L. Chen, L. X. Yang

Abstract: The exploration of topological quantum materials and topological phase transitions is at the forefront of modern condensed matter physics. Quasi-one-dimensional (quasi-1D) bismuth iodide Bi4I4 exhibits versatile topological phases of matter including weak topological insulator (WTI) and higher-order topological insulator (HOTI) phases with high tunability in response to external parameters. In thi… ▽ More The exploration of topological quantum materials and topological phase transitions is at the forefront of modern condensed matter physics. Quasi-one-dimensional (quasi-1D) bismuth iodide Bi4I4 exhibits versatile topological phases of matter including weak topological insulator (WTI) and higher-order topological insulator (HOTI) phases with high tunability in response to external parameters. In this work, performing laser-based angle-resolved photoemission spectroscopy with submicron spatial resolution (micro-ARPES), we comprehensively investigate the fine electronic structure and topological phase transition of Bi4I4. Our examination of the low-temperature α-phase reveals the presence of an energy gap on the (100) surface, providing spectroscopic evidence for the HOTI phase. Conversely, the high-temperature β-Bi4I4 harbors a gapless Dirac fermion on the (100) surface alongside gapped states on the (001) surface, thereby establishing a WTI phase. By tracking the temperature evolution of the (100) surface states, we unveil a thermal hysteresis of the surface gap in line with the α-β structural phase transition. Our findings elucidate the topological properties of Bi4I4 and directly evidence a temperature-induced topological phase transition from WTI to HOTI, which paves the way to potential applications based on the room-temperature topological phase transition in the quasi-1D topological quantum material. △ Less

Submitted 27 July, 2024; originally announced July 2024.

Quantum-well resonances caused by partial confinement in MgO-based magnetic tunnel junctions

Authors: L. N. Jiang, B. Y. Chi, W. Z. Chen, X. F. Han

Abstract: Quantum-well resonance is achieved through partial confinement in magnetic tunnel junctions (MTJs), which provides an additional operable degree of freedom to regulate quantum-well levels. Using Al/Fe/MgO/Fe/Al and Ag/Al/Fe/MgO/Fe/Al/Ag MTJs as examples, via first-principles calculations, we demonstrate that the partial confinement of $Δ_1$ electron at Al/Fe interface and the full confinement at F… ▽ More Quantum-well resonance is achieved through partial confinement in magnetic tunnel junctions (MTJs), which provides an additional operable degree of freedom to regulate quantum-well levels. Using Al/Fe/MgO/Fe/Al and Ag/Al/Fe/MgO/Fe/Al/Ag MTJs as examples, via first-principles calculations, we demonstrate that the partial confinement of $Δ_1$ electron at Al/Fe interface and the full confinement at Fe/MgO interface combine to produce quantum-well resonances in Fe. The quantum-well levels of Fe can be periodically adjusted by two degrees of freedom: Fe and Al thickness. The oscillation period obtained from conductance $G_{\uparrow\uparrow}$ is 2.13 ML Fe (9 ML Al), close to 2.25 ML Fe (8.33 ML Al) calculated by bcc-Fe (fcc-Al) band. The combination of long and short periods enables quantum-well levels to be finely adjusted. An ultrahigh optimistic TMR effect of $3.05\times10$$^5$\% is achieved. Our results provides a new path for designing and applying quantum-well resonances in spintronics devices. △ Less

Submitted 7 April, 2024; v1 submitted 19 November, 2023; originally announced November 2023.

Topological electronic structure and spin texture of quasi-one-dimensional higher-order topological insulator Bi4Br4

Authors: W. X. Zhao, M. Yang, R. Z. Xu, X. Du, Y. D. Li, K. Y. Zhai, C. Peng, D. Pei, H. Gao, Y. W. Li, L. X. Xu, J. F. Han, Y. Huang, Z. K. Liu, Y. G. Yao, J. C. Zhuang, Y. Du, J. J. Zhou, Y. L. Chen, L. X. Yang

Abstract: The notion of topological insulators (TIs), characterized by an insulating bulk and conducting topological surface states, can be extended to higher-order topological insulators (HOTIs) hosting gapless modes localized at the boundaries of two or more dimensions lower than the insulating bulk1-5. In this work, by performing high-resolution angle-resolved photoemission spectroscopy (ARPES) measureme… ▽ More The notion of topological insulators (TIs), characterized by an insulating bulk and conducting topological surface states, can be extended to higher-order topological insulators (HOTIs) hosting gapless modes localized at the boundaries of two or more dimensions lower than the insulating bulk1-5. In this work, by performing high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements with submicron spatial and spin resolutions, we systematically investigate the electronic structure and spin texture of quasi-one-dimensional (1D) HOTI candidate Bi4Br4. In contrast to the bulk-state-dominant spectra on the (001) surface, we observe gapped surface states on the (100) surface, whose dispersion and spin-polarization agree well with our ab initio calculations. Moreover, we reveal in-gap states connecting the surface valence and conduction bands, which is an explicit signature of the existence of hinge states inside the (100) surface gap. Our findings provide compelling evidence for the HOTI phase of Bi4Br4. The identification of the higher-order topological phase will lay the promising prospect of applications based on 1D spin-momentum locked current in electronic and spintronic devices. △ Less

Submitted 6 November, 2023; originally announced November 2023.

Stochastic p-Bits Based on Spin-Orbit Torque Magnetic Tunnel Junctions

Authors: X. H. Li, M. K. Zhao, R. Zhang, C. H. Wan, Y. Z. Wang, X. M. Luo, S. Q. Liu, J. H. Xia, G. Q. Yu, X. F. Han

Abstract: Stochastic p-Bit devices play a pivotal role in solving NP-hard problems, neural network computing, and hardware accelerators for algorithms such as the simulated annealing. In this work, we focus on Stochastic p-Bits based on high-barrier magnetic tunnel junctions (HB-MTJs) with identical stack structure and cell geometry, but employing different spin-orbit torque (SOT) switching schemes. We cond… ▽ More Stochastic p-Bit devices play a pivotal role in solving NP-hard problems, neural network computing, and hardware accelerators for algorithms such as the simulated annealing. In this work, we focus on Stochastic p-Bits based on high-barrier magnetic tunnel junctions (HB-MTJs) with identical stack structure and cell geometry, but employing different spin-orbit torque (SOT) switching schemes. We conducted a comparative study of their switching probability as a function of pulse amplitude and width of the applied voltage. Through experimental and theoretical investigations, we have observed that the Y-type SOT-MTJs exhibit the gentlest dependence of the switching probability on the external voltage. This characteristic indicates superior tunability in randomness and enhanced robustness against external disturbances when Y-type SOT-MTJs are employed as stochastic p-Bits. Furthermore, the random numbers generated by these Y-type SOT-MTJs, following XOR pretreatment, have successfully passed the National Institute of Standards and Technology (NIST) SP800-22 test. This comprehensive study demonstrates the high performance and immense potential of Y-type SOT-MTJs for the implementation of stochastic p-Bits. △ Less

Submitted 5 June, 2023; originally announced June 2023.

Symmetry-compatible angular momentum conservation relation in plasmonic vortex lenses with rotational symmetries

Authors: Jie Yang, Pengyi Feng, Fei Han, Xuezhi Zheng, Jiafu Wang, Zhongwei Jin, Niels Verellen, Ewald Janssens, Jincheng Ni, Weijin Chen, Yuanjie Yang, Anxue Zhang, Benfeng Bai, Chengwei Qiu, Guy A E Vandenbosch

Abstract: Plasmonic vortex lenses (PVLs), producing vortex modes, known as plasmonic vortices (PVs), in the process of plasmonic spin-orbit coupling, provide a promising platform for the realization of many optical vortex-based applications. Very recently, it has been reported that a single PVL can generate multiple PVs. This work exploits the representation theory of finite groups, reveals the symmetry ori… ▽ More Plasmonic vortex lenses (PVLs), producing vortex modes, known as plasmonic vortices (PVs), in the process of plasmonic spin-orbit coupling, provide a promising platform for the realization of many optical vortex-based applications. Very recently, it has been reported that a single PVL can generate multiple PVs. This work exploits the representation theory of finite groups, reveals the symmetry origin of the generated PVs, and derives a new conservation relation based on symmetry principles. Specifically, the symmetry principles divide the near field of the PVL into regions, designate integers, which are the topological charges, to the regions, and, particularly, give an upper bound to the topological charge of the PV at the center of the PVL. Further application of the symmetry principles to the spin-orbit coupling process leads to a new conservation relation. Based on this relation, a two-step procedure is suggested to link the angular momentum of the incident field with the one of the generated PVs through the symmetries of the PVL. This theory is well demonstrated by numerical calculations. This work provides an alternative but essential symmetry perspective on the dynamics of spin-orbit coupling in PVLs, forms a strong complement for the physical investigations performed before, and therefore lays down a solid foundation for flexibly manipulating the PVs for emerging vortex-based nanophotonic applications. △ Less

Submitted 25 October, 2022; v1 submitted 28 September, 2022; originally announced September 2022.

Comments: 23 pages and 3 figures

Comparison of spin-wave transmission in parallel and antiparallel magnetic configurations

Authors: Y. W. Xing, Z. R. Yan, X. F. Han

Abstract: Parallel (P) and antiparallel (AP) configurations are widely applied in magnetic heterostructures and have significant impacts on the spin-wave transmission in magnonic devices. In the present study, a theoretical investigation was conducted into the transmission of exchange-dominated spin waves with nanoscale wavelengths in a type of heterostructure including two magnetic media, of which the magn… ▽ More Parallel (P) and antiparallel (AP) configurations are widely applied in magnetic heterostructures and have significant impacts on the spin-wave transmission in magnonic devices. In the present study, a theoretical investigation was conducted into the transmission of exchange-dominated spin waves with nanoscale wavelengths in a type of heterostructure including two magnetic media, of which the magnetization state can be set to the P (AP) configuration by ferromagnetic (antiferromagnetic) interfacial exchange coupling (IEC). The boundary conditions in P and AP cases were derived, by which the transmission and reflection coefficients of spin waves were analytically given and numerically calculated. In the P configuration, a critical angle $θ_{\textrm{c}}$ always exists and has a significant influence on the transmission. Spin waves are refracted and reflected when the incident angle $θ_{\textrm{i}}$ is smaller than the critical angle ($θ_{\textrm{i}} < θ_{\textrm{c}}$), while total reflection occurs as $θ_{\textrm{i}} \geq θ_{\textrm{c}}$. In the AP configuration, the spin-wave polarizations of medium 1 and 2 are inverse, that is, right-handed (RH) and left-handed (LH), leading to the total reflection being independent of $θ_{\textrm{i}}$. As demonstrated by the difference in spin-wave transmission properties between the P ($θ_{\textrm{i}} < θ_{\textrm{c}}$) and AP cases, there is a polarization-dependent scattering. However, as $θ_{\textrm{i}}$ exceeds $θ_{\textrm{c}}$, the P ($θ_{\textrm{i}} > θ_{\textrm{c}}$) case exhibits similarities with the AP case, where the transmitted waves are found to be evanescent in medium 2 and their decay lengths are investigated. △ Less

Submitted 18 December, 2021; v1 submitted 29 November, 2021; originally announced November 2021.

Extended Kohler$^,$s Rule of Magnetoresistance

Authors: Jing Xu, Fei Han, Ting-Ting Wang, Laxman R. Thoutam, Samuel E. Pate, Mingda Li, Xufeng Zhang, Yong-Lei Wang, Roxanna Fotovat, Ulrich Welp, Xiuquan Zhou, Wai-Kwong Kwok, Duck Young Chung, Mercouri G. Kanatzidis, Zhi-Li Xiao

Abstract: A notable phenomenon in topological semimetals is the violation of Kohler$^,$s rule, which dictates that the magnetoresistance $MR$ obeys a scaling behavior of $MR = f(H/ρ_0$), where $MR = [ρ_H-ρ_0]/ρ_0$ and $H$ is the magnetic field, with $ρ_H$ and $ρ_0$ being the resistivity at $H$ and zero field, respectively. Here we report a violation originating from thermally-induced change in the carrier d… ▽ More A notable phenomenon in topological semimetals is the violation of Kohler$^,$s rule, which dictates that the magnetoresistance $MR$ obeys a scaling behavior of $MR = f(H/ρ_0$), where $MR = [ρ_H-ρ_0]/ρ_0$ and $H$ is the magnetic field, with $ρ_H$ and $ρ_0$ being the resistivity at $H$ and zero field, respectively. Here we report a violation originating from thermally-induced change in the carrier density. We find that the magnetoresistance of the Weyl semimetal, TaP, follows an extended Kohler$^,$s rule $MR = f[H/(n_Tρ_0)]$, with $n_T$ describing the temperature dependence of the carrier density. We show that $n_T$ is associated with the Fermi level and the dispersion relation of the semimetal, providing a new way to reveal information on the electronic bandstructure. We offer a fundamental understanding of the violation and validity of Kohler$^,$s rule in terms of different temperature-responses of $n_T$. We apply our extended Kohler$^,$s rule to BaFe$_2$(As$_{1-x}$P$_x$)$_2$ to settle a long-standing debate on the scaling behavior of the normal-state magnetoresistance of a superconductor, namely, $MR$ ~ $tan^2θ_H$, where $θ_H$ is the Hall angle. We further validate the extended Kohler$^,$s rule and demonstrate its generality in a semiconductor, InSb, where the temperature-dependent carrier density can be reliably determined both theoretically and experimentally. △ Less

Submitted 16 September, 2021; originally announced September 2021.

Journal ref: Phys. Rev. X 11, 041029 (2021)

Unconventional hysteretic transition in a charge density wave

Authors: B. Q. Lv, Alfred Zong, D. Wu, A. V. Rozhkov, Boris V. Fine, Su-Di Chen, Makoto Hashimoto, Dong-Hui Lu, M. Li, Y. -B. Huang, Jacob P. C. Ruff, Donald A. Walko, Z. H. Chen, Inhui Hwang, Yifan Su, Xiaozhe Shen, Xirui Wang, Fei Han, Hoi Chun Po, Yao Wang, Pablo Jarillo-Herrero, Xijie Wang, Hua Zhou, Cheng-Jun Sun, Haidan Wen , et al. (3 additional authors not shown)

Abstract: Hysteresis underlies a large number of phase transitions in solids, giving rise to exotic metastable states that are otherwise inaccessible. Here, we report an unconventional hysteretic transition in a quasi-2D material, EuTe4. By combining transport, photoemission, diffraction, and x-ray absorption measurements, we observed that the hysteresis loop has a temperature width of more than 400 K, sett… ▽ More Hysteresis underlies a large number of phase transitions in solids, giving rise to exotic metastable states that are otherwise inaccessible. Here, we report an unconventional hysteretic transition in a quasi-2D material, EuTe4. By combining transport, photoemission, diffraction, and x-ray absorption measurements, we observed that the hysteresis loop has a temperature width of more than 400 K, setting a record among crystalline solids. The transition has an origin distinct from known mechanisms, lying entirely within the incommensurate charge-density-wave (CDW) phase of EuTe4 with no change in the CDW modulation periodicity. We interpret the hysteresis as an unusual switching of the relative CDW phases in different layers, a phenomenon unique to quasi-2D compounds that is not present in either purely 2D or strongly-coupled 3D systems. Our findings challenge the established theories on metastable states in density wave systems, pushing the boundary of understanding hysteretic transitions in a broken-symmetry state. △ Less

Submitted 17 June, 2021; originally announced June 2021.

Journal ref: Phys. Rev. Lett. 128, 036401 (2022)

Fluctuation-driven, topology-stabilized order in a correlated nodal semimetal

Authors: Nathan C. Drucker, Thanh Nguyen, Fei Han, Xi Luo, Nina Andrejevic, Ziming Zhu, Grigory Bednik, Quynh T. Nguyen, Zhantao Chen, Linh K. Nguyen, Travis J. Williams, Matthew B. Stone, Alexander I. Kolesnikov, Songxue Chi, Jaime Fernandez-Baca, Tom Hogan, Ahmet Alatas, Alexander A. Puretzky, David B. Geohegan, Shengxi Huang, Yue Yu, Mingda Li

Abstract: The interplay between strong electron correlation and band topology is at the forefront of condensed matter research. As a direct consequence of correlation, magnetism enriches topological phases and also has promising functional applications. However, the influence of topology on magnetism remains unclear, and the main research effort has been limited to ground state magnetic orders. Here we repo… ▽ More The interplay between strong electron correlation and band topology is at the forefront of condensed matter research. As a direct consequence of correlation, magnetism enriches topological phases and also has promising functional applications. However, the influence of topology on magnetism remains unclear, and the main research effort has been limited to ground state magnetic orders. Here we report a novel order above the magnetic transition temperature in magnetic Weyl semimetal (WSM) CeAlGe. Such order shows a number of anomalies in electrical and thermal transport, and neutron scattering measurements. We attribute this order to the coupling of Weyl fermions and magnetic fluctuations originating from a three-dimensional Seiberg-Witten monopole, which qualitatively agrees well with the observations. Our work reveals a prominent role topology may play in tailoring electron correlation beyond ground state ordering, and offers a new avenue to investigate emergent electronic properties in magnetic topological materials. △ Less

Submitted 19 July, 2023; v1 submitted 15 March, 2021; originally announced March 2021.

Comments: Errors found in theoretical section of the paper

Electrical spin injection into InGaAs/GaAs quantum wells: a comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods

Authors: P. Barate, S. Liang, T. T. Zhang, J. Frougier, M. Vidal, P. Renucci, X. Devaux, B. Xu, H. Jaffrès, J. M. George, X. Marie, M. Hehn, S. Mangin, Y. Zheng, T. Amand, B. Tao, X. F. Han, Z. Wang, Y. Lu

Abstract: An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy (MBE). The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for t… ▽ More An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy (MBE). The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for the two types of samples. Both samples show the same trend: an increase of the electroluminescence circular polarization (Pc) with the increase of annealing temperature, followed by a saturation of Pc beyond 350°C annealing. Since the increase of Pc starts well below the crystallization temperature of the full CoFeB bulk layer, this trend could be mainly due to an improvement of chemical structure at the top CoFeB/MgO interface. This study reveals that the control of CoFeB/MgO interface is essential important for an optimal spin injection into semiconductor. △ Less

Submitted 7 April, 2020; originally announced April 2020.

Journal ref: Applied Physics Letters, 105, 012404 (2014)

Machine learning spectral indicators of topology

Authors: Nina Andrejevic, Jovana Andrejevic, B. Andrei Bernevig, Nicolas Regnault, Fei Han, Gilberto Fabbris, Thanh Nguyen, Nathan C. Drucker, Chris H. Rycroft, Mingda Li

Abstract: Topological materials discovery has emerged as an important frontier in condensed matter physics. While theoretical classification frameworks have been used to identify thousands of candidate topological materials, experimental determination of materials' topology often poses significant technical challenges. X-ray absorption spectroscopy (XAS) is a widely-used materials characterization technique… ▽ More Topological materials discovery has emerged as an important frontier in condensed matter physics. While theoretical classification frameworks have been used to identify thousands of candidate topological materials, experimental determination of materials' topology often poses significant technical challenges. X-ray absorption spectroscopy (XAS) is a widely-used materials characterization technique sensitive to atoms' local symmetry and chemical bonding, which are intimately linked to band topology by the theory of topological quantum chemistry (TQC). Moreover, as a local structural probe, XAS is known to have high quantitative agreement between experiment and calculation, suggesting that insights from computational spectra can effectively inform experiments. In this work, we leverage computed X-ray absorption near-edge structure (XANES) spectra of more than 10,000 inorganic materials to train a neural network (NN) classifier that predicts topological class directly from XANES signatures, achieving F$_1$ scores of 89% and 93% for topological and trivial classes, respectively. Additionally, we obtain consistent classifications using corresponding experimental and computational XANES spectra for a small number of measured compounds. Given the simplicity of the XAS setup and its compatibility with multimodal sample environments, the proposed machine learning-augmented XAS topological indicator has the potential to discover broader categories of topological materials, such as non-cleavable compounds and amorphous materials, and may further inform field-driven phenomena in situ, such as magnetic field-driven topological phase transitions. △ Less

Submitted 7 October, 2022; v1 submitted 2 March, 2020; originally announced March 2020.

Anomalous Phonon-mode Dependence in Polarized Raman Spectroscopy of Topological Weyl Semimetal TaP

Authors: Kunyan Zhang, Xiaoqi Pang, Tong Wang, Fei Han, Shun-Li Shang, Nguyen T. Hung, Ahmad R. T. Nugraha, Zi-Kui Liu, Mingda Li, Riichiro Saito, Shengxi Huang

Abstract: Topological Weyl semimetals (WSMs) have attracted widespread interests due to the chiral Weyl fermions and surface Fermi arcs that enable unique optical and transport phenomena. In this work, we present angle-resolved Raman spectroscopy of TaP, a prototypical noncentrosymmetric WSM, for five excitation wavelengths ranging from 364 to 785 nm. The Raman active modes, $A_1$, $B_1^1$, and $B_1^2$ mode… ▽ More Topological Weyl semimetals (WSMs) have attracted widespread interests due to the chiral Weyl fermions and surface Fermi arcs that enable unique optical and transport phenomena. In this work, we present angle-resolved Raman spectroscopy of TaP, a prototypical noncentrosymmetric WSM, for five excitation wavelengths ranging from 364 to 785 nm. The Raman active modes, $A_1$, $B_1^1$, and $B_1^2$ modes, exhibit two main unique features beyond the conventional Raman theory. First, the relative intensities of Raman active modes change as a function of the excitation wavelength. Second, angle-resolved polarized Raman spectra show systematic deviation from the Raman tensor theory. In particular, the $B_1^1$ mode is absent for 633 nm excitation, whereas the $B_1^2$ mode shows an unusual two-fold symmetry instead of a four-fold symmetry for 488, 532, and 633 nm excitations. These unconventional phenomena are attributed to the interference effect in the Raman process owing to the existence of multiple carrier pockets with almost the same energy but different symmetries. △ Less

Submitted 16 January, 2020; originally announced January 2020.

Large nonreciprocal absorption and emission of radiation in type-I Weyl semimetals with time reversal symmetry breaking

Authors: Yoichiro Tsurimaki, Xin Qian, Simo Pajovic, Fei Han, Mingda Li, Gang Chen

Abstract: The equality between the spectral, directional emittance and absorptance of an object under local thermal equilibrium is known as Kirchhoff's law of radiation. The breakdown of Kirchhoff's law of radiation is physically allowed by breaking time reversal symmetry and can open opportunities for nonreciprocal light emitters and absorbers. Large anomalous Hall conductivity and angle recently observed… ▽ More The equality between the spectral, directional emittance and absorptance of an object under local thermal equilibrium is known as Kirchhoff's law of radiation. The breakdown of Kirchhoff's law of radiation is physically allowed by breaking time reversal symmetry and can open opportunities for nonreciprocal light emitters and absorbers. Large anomalous Hall conductivity and angle recently observed in topological Weyl semimetals, particularly type-I magnetic Weyl semimetals and type-II Weyl semimetals, are expected to create large nonreciprocal electromagnetic wave propagation. In this work, we focus on type-I magnetic Weyl semimetals and show via modeling and simulation that nonreciprocal surface plasmons polaritons can result in pronounced nonreciprocity without an external magnetic field. The modeling in this work begins with a single pair of Weyl nodes, followed by a more realistic model with multiple paired Weyl nodes. Fermi-arc surface states are also taken into account through the surface conductivity. This work points to the promising applicability of topological Weyl semimetals for magneto-optical and energy applications. △ Less

Submitted 1 May, 2020; v1 submitted 21 November, 2019; originally announced November 2019.

Comments: 24 pages, 4 figures

Journal ref: Phys. Rev. B 101, 165426 (2020)

Simultaneously shaping the intensity and phase of light for optical nanomanipulation

Authors: Xionggui Tang, Fan Nan, Fei Han, Zijie Yan

Abstract: Holographic optical tweezers can be applied to manipulate microscopic particles in arbitrary optical patterns, which classical optical tweezers cannot do. This ability relies on accurate computer-generated holography (CGH), yet most CGH techniques can only shape the intensity profiles while the phase distributions are random. Here, we introduce a new method for fast generation of holograms that al… ▽ More Holographic optical tweezers can be applied to manipulate microscopic particles in arbitrary optical patterns, which classical optical tweezers cannot do. This ability relies on accurate computer-generated holography (CGH), yet most CGH techniques can only shape the intensity profiles while the phase distributions are random. Here, we introduce a new method for fast generation of holograms that allows for simultaneously shaping both the intensity and phase distributions of light. The method uses a discrete inverse Fourier transform formula to directly calculate a hologram in one step, in which a random phase factor is introduced into the formula to enable simultaneous control of intensity and phase. Various optical patterns can be created, as demonstrated by the experimentally measured intensity and phase profiles projected from the holograms. The simultaneous shaping of intensity and phase of light provides new opportunities for optical trapping and manipulation, such as optical transportation of metal nanoparticles in ring traps with linear and nonlinear phase distributions. △ Less

Submitted 17 October, 2019; originally announced October 2019.

Magnetization governed magnetoresistance anisotropy in topological semimetal CeBi

Authors: Yang-Yang Lyu, Fei Han, Zhi-Li Xiao, Jing Xu, Yong-Lei Wang, Hua-Bing Wang, Jin-Ke Bao, Duck Young Chung, Mingda Li, Ivar Martin, Ulrich Welp, Mercouri G. Kanatzidis, Wai-Kwong Kwok

Abstract: Magnetic topological semimetals, the latest member of topological quantum materials, are attracting extensive attention as they may lead to topologically-driven spintronics. Currently, magnetotransport investigations on these materials are focused on anomalous Hall effect. Here, we report on the magnetoresistance anisotropy of topological semimetal CeBi, which has tunable magnetic structures arisi… ▽ More Magnetic topological semimetals, the latest member of topological quantum materials, are attracting extensive attention as they may lead to topologically-driven spintronics. Currently, magnetotransport investigations on these materials are focused on anomalous Hall effect. Here, we report on the magnetoresistance anisotropy of topological semimetal CeBi, which has tunable magnetic structures arising from localized Ce 4f electrons and exhibits both negative and positive magnetoresistances, depending on the temperature. We found that the angle dependence of the negative magnetoresistance, regardless of its large variation with the magnitude of the magnetic field and with temperature, is solely dictated by the field-induced magnetization that is orientated along a primary crystalline axis and flops under the influence of a rotating magnetic field. The results reveal the strong interaction between conduction electrons and magnetization in CeBi. They also indicate that magnetoresistance anisotropy can be used to uncover the magnetic behavior and the correlation between transport phenomena and magnetism in magnetic topological semimetals. △ Less

Submitted 11 October, 2019; originally announced October 2019.

Journal ref: Phys. Rev. B 100, 180407 (2019)

Spectroscopic Signatures of Nonlocal Interfacial Coupling in Superconducting FeSe/SrTiO3 Heterostructures

Authors: Nina Andrejevic, Fei Han, Thanh Nguyen, Alexander Puretzky, Qingping Meng, Yi-Fan Zhao, Weiwei Zhao, Lijun Wu, David Geohegan, Cui-Zu Chang, Yimei Zhu, Shengxi Huang, Mingda Li

Abstract: The mechanism of enhanced superconductivity in the one unit-cell (1UC) FeSe film on a SrTiO3 (STO) substrate has stimulated significant research interest but remains elusive. Using low-temperature, voltage-gated Raman spectroscopy and low-temperature valence electron energy loss spectroscopy (VEELS), we characterize the phonon behavior and interfacial charge transfer in single- and few-layer FeSe… ▽ More The mechanism of enhanced superconductivity in the one unit-cell (1UC) FeSe film on a SrTiO3 (STO) substrate has stimulated significant research interest but remains elusive. Using low-temperature, voltage-gated Raman spectroscopy and low-temperature valence electron energy loss spectroscopy (VEELS), we characterize the phonon behavior and interfacial charge transfer in single- and few-layer FeSe films on STO. Raman measurements reveal ambipolar softening of the FeSe vibrational modes, mimicking that of the underlying STO substrate. We attribute this behavior to an interfacial coupling effect of STO on FeSe lattice dynamics. This interfacial coupling effect is further supported by local electron effective mass enhancement, which is determined from the red-shift in the FeSe VEELS spectrum near the FeSe/STO interface. Our work sheds light on the possible interfacial mechanisms contributing to the enhanced superconductivity across the FeSe/STO interface and further unveils the potential of low-temperature gated Raman spectroscopy and VEELS in clarifying a broad category of quantum materials. △ Less

Submitted 15 August, 2019; originally announced August 2019.

Comments: 16 pages, 4 main figures, 5 supplementary figures

Topological Singularity Induced Chiral Kohn Anomaly in a Weyl Semimetal

Authors: Thanh Nguyen, Fei Han, Nina Andrejevic, Ricardo Pablo-Pedro, Anuj Apte, Yoichiro Tsurimaki, Zhiwei Ding, Kunyan Zhang, Ahmet Alatas, Ercan E. Alp, Songxue Chi, Jaime Fernandez-Baca, Masaaki Matsuda, David Alan Tennant, Yang Zhao, Zhijun Xu, Jeffrey W. Lynn, Shengxi Huang, Mingda Li

Abstract: The electron-phonon interaction (EPI) is instrumental in a wide variety of phenomena in solid-state physics, such as electrical resistivity in metals, carrier mobility, optical transition and polaron effects in semiconductors, lifetime of hot carriers, transition temperature in BCS superconductors, and even spin relaxation in diamond nitrogen-vacancy centers for quantum information processing. How… ▽ More The electron-phonon interaction (EPI) is instrumental in a wide variety of phenomena in solid-state physics, such as electrical resistivity in metals, carrier mobility, optical transition and polaron effects in semiconductors, lifetime of hot carriers, transition temperature in BCS superconductors, and even spin relaxation in diamond nitrogen-vacancy centers for quantum information processing. However, due to the weak EPI strength, most phenomena have focused on electronic properties rather than on phonon properties. One prominent exception is the Kohn anomaly, where phonon softening can emerge when the phonon wavevector nests the Fermi surface of metals. Here we report a new class of Kohn anomaly in a topological Weyl semimetal (WSM), predicted by field-theoretical calculations, and experimentally observed through inelastic x-ray and neutron scattering on WSM tantalum phosphide (TaP). Compared to the conventional Kohn anomaly, the Fermi surface in a WSM exhibits multiple topological singularities of Weyl nodes, leading to a distinct nesting condition with chiral selection, a power-law divergence, and non-negligible dynamical effects. Our work brings the concept of Kohn anomaly into WSMs and sheds light on elucidating the EPI mechanism in emergent topological materials. △ Less

Submitted 15 May, 2020; v1 submitted 2 June, 2019; originally announced June 2019.

Comments: 30 pages, 4 main figures, 11 supplementary figures and 1 theoretical derivation. Feedback most welcome

Journal ref: Phys. Rev. Lett. 124, 236401 (2020)

Orbital-flop Induced Magnetoresistance Anisotropy in Rare Earth Monopnictide CeSb

Authors: Jing Xu, Fengcheng Wu, Jin-Ke Bao, Fei Han, Zhi-Li Xiao, Ivar Martin, Yang-Yang Lyu, Yong-Lei Wang, Duck Young Chung, Mingda Li, Wei Zhang, John E. Pearson, Jidong S. Jiang, Mercouri G. Kanatzidis, Wai-Kwong Kwok

Abstract: The charge and spin of the electrons in solids have been extensively exploited in electronic devices and in the development of spintronics. Another attribute of electrons - their orbital nature - is attracting growing interest for understanding exotic phenomena and in creating the next-generation of quantum devices such as orbital qubits. Here, we report on orbital-flop induced magnetoresistance a… ▽ More The charge and spin of the electrons in solids have been extensively exploited in electronic devices and in the development of spintronics. Another attribute of electrons - their orbital nature - is attracting growing interest for understanding exotic phenomena and in creating the next-generation of quantum devices such as orbital qubits. Here, we report on orbital-flop induced magnetoresistance anisotropy in CeSb. In the low temperature high magnetic-field driven ferromagnetic state, a series of additional minima appear in the angle-dependent magnetoresistance. These minima arise from the anisotropic magnetization originating from orbital-flops and from the enhanced electron scattering from magnetic multidomains formed around the first-order orbital-flop transition. The measured magnetization anisotropy can be accounted for with a phenomenological model involving orbital-flops and a spin-valve-like structure is used to demonstrate the viable utilization of orbital-flop phenomenon. Our results showcase a contribution of orbital behavior in the emergence of intriguing phenomena. △ Less

Submitted 21 May, 2019; originally announced May 2019.

Journal ref: Nature Communications 10, 2875 (2019)

Quantized Thermoelectric Hall Effect Induces Giant Power Factor in a Topological Semimetal

Authors: Fei Han, Nina Andrejevic, Thanh Nguyen, Vladyslav Kozii, Quynh Nguyen, Tom Hogan, Zhiwei Ding, Ricardo Pablo-Pedro, Shreya Parjan, Brian Skinner, Ahmet Alatas, Ercan Alp, Songxue Chi, Jaime Fernandez-Baca, Shengxi Huang, Liang Fu, Mingda Li

Abstract: Thermoelectrics are promising by directly generating electricity from waste heat. However, (sub-)room-temperature thermoelectrics have been a long-standing challenge due to vanishing electronic entropy at low temperatures. Topological materials offer a new avenue for energy harvesting applications. Recent theories predicted that topological semimetals at the quantum limit can lead to a large, non-… ▽ More Thermoelectrics are promising by directly generating electricity from waste heat. However, (sub-)room-temperature thermoelectrics have been a long-standing challenge due to vanishing electronic entropy at low temperatures. Topological materials offer a new avenue for energy harvesting applications. Recent theories predicted that topological semimetals at the quantum limit can lead to a large, non-saturating thermopower and a quantized thermoelectric Hall conductivity approaching a universal value. Here, we experimentally demonstrate the non-saturating thermopower and quantized thermoelectric Hall effect in the topological Weyl semimetal (WSM) tantalum phosphide (TaP). An ultrahigh longitudinal thermopower Sxx= 1.1x10^3 muV/K and giant power factor ~525 muW/cm/K^2 are observed at ~40K, which is largely attributed to the quantized thermoelectric Hall effect. Our work highlights the unique quantized thermoelectric Hall effect realized in a WSM toward low-temperature energy harvesting applications. △ Less

Submitted 27 October, 2020; v1 submitted 5 April, 2019; originally announced April 2019.

Comments: 54 pages total, 5 main figures + 22 supplementary figures. To appear in Nature Communications (2020)

Journal ref: Nat Commun 11, 6167 (2020)

Evidence of Pure Spin-Current Generated by Spin Pumping in Interface Localized States in Hybrid Metal-Silicon-Metal Vertical Structures

Authors: C. Cerqueira, J. Y. Qin, H. Dang, A. Djeffal, J. -C. Le Breton, M. Hehn, J. -C. Rojas-Sanchez, X. Devaux, S. Suire, S. Migot, P. Schieffer, J. -G. Mussot, P. Laczkowski, A. Anane, S. Petit-Watelot, M. Stoffel, S. Mangin, Z. Liu, B. W. Cheng, X. F. Han, H. Jaffrès, J. -M. George, Y. Lu

Abstract: Due to the difficulty to grow high quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was only limited to lateral geometry devices. In this work, by using ultra-high vacuum wafer-bonding technique, we have successfully fabricated metal semiconductor metal CoFeB/MgO/Si/Pt vertical structures. We hereby demonstrate pure spin-current injection and transport in… ▽ More Due to the difficulty to grow high quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was only limited to lateral geometry devices. In this work, by using ultra-high vacuum wafer-bonding technique, we have successfully fabricated metal semiconductor metal CoFeB/MgO/Si/Pt vertical structures. We hereby demonstrate pure spin-current injection and transport in the perpendicular current flow geometry over a distance larger than 2μm in n-type Si at room temperature. In those experiments, a pure propagating spin-current is generated via ferromagnetic resonance spin-pumping and converted into a measurable voltage by using the inverse spin-Hall effect occurring in the top Pt layer. A systematic study by varying both Si and MgO thicknesses reveals the important role played by the localized states at the MgO/Si interface for the spin-current generation. Proximity effects involving indirect exchange interactions between the ferromagnet and the MgO/Si interface states appears to be a prerequisite to establish the necessary out-of-equilibrium spin-population in Si under the spin-pumping action. △ Less

Submitted 10 February, 2019; originally announced February 2019.

Journal ref: NanoLett. 19, 90(2019)

Advanced method for reliable estimation of the spin-orbit torque efficiency in low coercive ferromagnetic multilayers

Authors: M. E. Stebliy, A. G. Kolesnikov, A. V. Ognev, E. V. Stebliy, X. Wang, H. F. Han, A. S. Samardak

Abstract: An experimental study of current-induced magnetization reversal of the Ru/Co/Ru and Ru/Co/Ru/W structures was carried out. In the considered structures, due to the small value of the coercive force comparable in magnitude to the Oersted field and the SOT effect field, magnetization reversal is carried out by moving a domain wall parallel to the direction of current injection. For such a case, a ne… ▽ More An experimental study of current-induced magnetization reversal of the Ru/Co/Ru and Ru/Co/Ru/W structures was carried out. In the considered structures, due to the small value of the coercive force comparable in magnitude to the Oersted field and the SOT effect field, magnetization reversal is carried out by moving a domain wall parallel to the direction of current injection. For such a case, a new method for estimating the effective field of SOT based on the analysis of the domain wall position taking into account the distribution of the Oersted field was proposed. This method allowed determining the effective longitudinal field and the efficiency of SOT equal 0.03 in the quasi-symmetric Ru/Co/Ru structure. It was found that adding the W capping layer enhances the SOT effect by 5 times. △ Less

Submitted 11 December, 2018; originally announced December 2018.

Comments: 12 pages, 8 figures

Journal ref: Phys. Rev. Applied 11, 054047 (2019)

Localized polarons and conductive charge carriers: understanding CaCu$_{3}$Ti$_{4}$O$_{12}$ over a broad temperature range

Authors: Laijun Liu, Shaokai Ren, Jia Liu, Feifei Han, Jie Zhang, Biaolin Peng, Dawei Wang, Alexei A. Bokov, Zuo-Guang Ye

Abstract: CaCu$_{3}$Ti$_{4}$O$_{12}$ (CCTO) has a large dielectric permittivity that is independent of the probing frequency near the room temperature, which complicated due to the existence of several dynamic processes. Here, we consider the combined effects of localized charge carriers (polarons) and thermally activated charge carriers using a recently proposed statistical model to fit and understand the… ▽ More CaCu$_{3}$Ti$_{4}$O$_{12}$ (CCTO) has a large dielectric permittivity that is independent of the probing frequency near the room temperature, which complicated due to the existence of several dynamic processes. Here, we consider the combined effects of localized charge carriers (polarons) and thermally activated charge carriers using a recently proposed statistical model to fit and understand the permittivity of CCTO measured at different frequencies over the whole temperature range accessible by our experiments. We found that the small permittivity at the lowest temperature is related to polaron frozen, while at higher temperatures the rapid increase is associated with the thermal excitation of polarons inducing the Maxwell-Wagner effect, and the final increase of the permittivity is attributed to the thermally activated conductivity. Such analysis enables us to separate the contributions from localized polarons and conductive charge carriers and quantify their activation energies. △ Less

Submitted 17 November, 2018; v1 submitted 21 October, 2018; originally announced October 2018.

Journal ref: Phys. Rev. B 99, 094110 (2019)

Doping effects of Cr on the physical properties of BaFe$_{1.9-x}$Ni$_{0.1}$Cr$_{x}$As$_{2}$

Authors: Dongliang Gong, Tao Xie, Rui Zhang, Jonas Birk, Christof Niedermayer, Fei Han, S. H. Lapidus, Pengcheng Dai, Shiliang Li, Huiqian Luo

Abstract: We present a systematic study on the heavily Cr doped iron pnictides BaFe$_{1.9-x}$Ni$_{0.1}$Cr$_{x}$As$_{2}$ by using elastic neutron scattering, high-resolution synchrotron X-ray diffraction (XRD), resistivity and Hall transport measurements. When the Cr concentration increases from $x=$ 0 to 0.8, neutron diffraction experiments suggest that the collinear antiferromagnetism persists in the whole… ▽ More We present a systematic study on the heavily Cr doped iron pnictides BaFe$_{1.9-x}$Ni$_{0.1}$Cr$_{x}$As$_{2}$ by using elastic neutron scattering, high-resolution synchrotron X-ray diffraction (XRD), resistivity and Hall transport measurements. When the Cr concentration increases from $x=$ 0 to 0.8, neutron diffraction experiments suggest that the collinear antiferromagnetism persists in the whole doping range, where the Néel temperature $T_N$ coincides with the tetragonal-to-orthorhombic structural transition temperature $T_s$, and both of them keeps around 35 K. The magnetic ordered moment, on the other hand, increases within increasing $x$ until $x=$ 0.5, and then decreases with further increasing $x$. Detailed refinement of the powder XRD patterns reveals that the Cr substitutions actually stretch the FeAs$_4$ tetrahedron along the $c-$axis and lift the arsenic height away Fe-Fe plane. Transport results indicate that the charge carriers become more localized upon Cr doping, then changes from electron-type to hole-type around $x=$ 0.5. Our results suggest that the ordered moment and the ordered temperature of static magnetism in iron pnictides can be decoupled and tuned separately by chemical doping. △ Less

Submitted 4 July, 2018; originally announced July 2018.

Comments: 10 pages, 7 figures

Journal ref: Physical Review B 98, 014512 (2018)

Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field

Authors: F. Cadiz, A. Djeffal, D. Lagarde, A. Balocchi, B. S. Tao, B. Xu, S. H. Liang, M. Stoffel, X. Devaux, H. Jaffres, J. M. George, M. Hehn, S. Mangin, H. Carrere, X. Marie, T. Amand, X. F. Han, Z. G. Wang, B. Urbaszek, Y. Lu, P. Renucci

Abstract: The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device wi… ▽ More The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device with p-type InGaAs quantum dots in the active region. We measure an Overhauser shift of several $μ$eV at zero magnetic field for the positively charged exciton (trion X$^+$) EL emission, which changes sign as we reverse the injected electron spin orientation. This is a signature of dynamic polarization of the nuclear spins in the quantum dot induced by the hyperfine interaction with the electrically injected electron spin. This study paves the way for electrical control of nuclear spin polarization in a single quantum dot without any external magnetic field. △ Less

Submitted 12 March, 2018; originally announced March 2018.

Comments: initial version, final version to appear in ACS Nano Letters

Magnon Valve Effect Between Two Magnetic Insulators

Authors: H. Wu, L. Huang, C. Fang, B. S. Yang, C. H. Wan, G. Q. Yu, J. F. Feng, H. X. Wei, X. F. Han

Abstract: The key physics of the spin valve involves spin-polarized conduction electrons propagating between two magnetic layers such that the device conductance is controlled by the relative magnetization orientation of two magnetic layers. Here, we report the effect of a magnon valve which is made of two ferromagnetic insulators (YIG) separated by a nonmagnetic spacer layer (Au). When a thermal gradient i… ▽ More The key physics of the spin valve involves spin-polarized conduction electrons propagating between two magnetic layers such that the device conductance is controlled by the relative magnetization orientation of two magnetic layers. Here, we report the effect of a magnon valve which is made of two ferromagnetic insulators (YIG) separated by a nonmagnetic spacer layer (Au). When a thermal gradient is applied perpendicular to the layers, the inverse spin Hall voltage output detected by a Pt bar placed on top of the magnon valve depends on the relative orientation of the magnetization of two YIG layers, indicating the magnon current induced by spin Seebeck effect at one layer affects the magnon current in the other layer separated by Au. We interpret the magnon valve effect by the angular momentum conversion and propagation between magnons in two YIG layers and conduction electrons in the Au layer. The temperature dependence of magnon valve ratio shows approximately a power law, supporting the above magnon-electron spin conversion mechanism. This work opens a new class of valve structures beyond the conventional spin valves. △ Less

Submitted 23 January, 2018; v1 submitted 19 January, 2018; originally announced January 2018.

Comments: 13 pages, 4 figures

Spin Quenching Assisted by a Strongly Anisotropic Compression Behavior in MnP

Authors: Fei Han, Di Wang, Yonggang Wang, Nana Li, Jin-Ke Bao, Bing Li, Antia S. Botana, Yuming Xiao, Paul Chow, Duck Young Chung, Jiuhua Chen, Mercouri G. Kanatzidis, Xiangang Wan, Wenge Yang, Ho-Kwang Mao

Abstract: We studied the crystal structure and spin state of MnP under high pressure with synchrotron X-ray diffraction and X-ray emission spectroscopy. MnP has an exceedingly strong anisotropy in compressibility, with the primary compressible direction along the b axis of the Pnma structure. X-ray emission spectroscopy reveals a pressure-driven quenching of the spin state in MnP. Firstprinciples calculatio… ▽ More We studied the crystal structure and spin state of MnP under high pressure with synchrotron X-ray diffraction and X-ray emission spectroscopy. MnP has an exceedingly strong anisotropy in compressibility, with the primary compressible direction along the b axis of the Pnma structure. X-ray emission spectroscopy reveals a pressure-driven quenching of the spin state in MnP. Firstprinciples calculations suggest that the strongly anisotropic compression behavior significantly enhances the dispersion of the Mn d-orbitals and the splitting of the d orbital levels compared to the hypothetical isotropic compression behavior. Thus, we propose spin quenching results mainly from the significant enhancement of the itinerancy of d electrons and partly from spin rearrangement occurring in the split d-orbital levels near the Fermi level. This explains the fast suppression of magnetic ordering in MnP under high pressure. The spin quenching lags behind the occurrence of superconductivity at ~8 GPa implying that spin fluctuations govern the electron pairing for superconductivity. △ Less

Submitted 21 December, 2017; originally announced December 2017.

Comments: 17 pages, 6 figures, accepted by New Journal of Physics

Journal ref: New Journal of Physics 20, 023012 (2018)

Separation of Electron and Hole Dynamics in the Semimetal LaSb

Authors: F. Han, J. Xu, A. S. Botana, Z. L. Xiao, Y. L. Wang, W. G. Yang, D. Y. Chung, M. G. Kanatzidis, M. R. Norman, G. W. Crabtree, W. K. Kwok

Abstract: We report investigations on the magnetotransport in LaSb, which exhibits extremely large magnetoresistance (XMR). Foremost, we demonstrate that the resistivity plateau can be explained without invoking topological protection. We then determine the Fermi surface from Shubnikov - de Haas (SdH) quantum oscillation measurements and find good agreement with the bulk Fermi pockets derived from first pri… ▽ More We report investigations on the magnetotransport in LaSb, which exhibits extremely large magnetoresistance (XMR). Foremost, we demonstrate that the resistivity plateau can be explained without invoking topological protection. We then determine the Fermi surface from Shubnikov - de Haas (SdH) quantum oscillation measurements and find good agreement with the bulk Fermi pockets derived from first principle calculations. Using a semiclassical theory and the experimentally determined Fermi pocket anisotropies, we quantitatively describe the orbital magnetoresistance, including its angle dependence. We show that the origin of XMR in LaSb lies in its high mobility with diminishing Hall effect, where the high mobility leads to a strong magnetic field dependence of the longitudinal magnetoconductance. Unlike a one-band material, when a system has two or more bands (Fermi pockets) with electron and hole carriers, the added conductance arising from the Hall effect is reduced, hence revealing the latent XMR enabled by the longitudinal magnetoconductance. With diminishing Hall effect, the magnetoresistivity is simply the inverse of the longitudinal magnetoconductivity, enabling the differentiation of the electron and hole contributions to the XMR, which varies with the strength and orientation of the magnetic field. This work demonstrates a convenient way to separate the dynamics of the charge carriers and to uncover the origin of XMR in multi-band materials with anisotropic Fermi surfaces. Our approach can be readily applied to other XMR materials. △ Less

Submitted 7 September, 2017; v1 submitted 17 August, 2017; originally announced August 2017.

Comments: 34 pages, 8 figures

Journal ref: Phys. Rev. B 96, 125112 (2017)

Tunneling anisotropic magnetoresistance driven by magnetic phase transition

Authors: X. Z. Chen, J. F. Feng, Z. C. Wang, J. Zhang, X. Y. Zhong, C. Song, L. Jin, B. Zhang, F. Li, M. Jiang, Y. Z. Tan, X. J. Zhou, G. Y. Shi, X. F. Zhou, X. D. Han, S. C. Mao, Y. H. Chen, X. F. Han, F. Pan

Abstract: The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here we report an alternative approach to o… ▽ More The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in alfa-FeRh-based junctions driven by the magnetic phase transition of alfa-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one alfa-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the alfa-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics. △ Less

Submitted 21 June, 2017; originally announced June 2017.

Comments: 25 pages, 5 figures, accepted by Nature Communications

Determination of spin relaxation times in heavy metals via 2nd harmonic spin injection magnetoresistance

Authors: C. Fang, C. H. Wan, X. M. Liu, B. S. Yang, J. Y. Qin, B. S. Tao, H. Wu, X. Zhang, Z. M. Jin, A. Hoffmann, X. F. Han

Abstract: In tunnel junctions between ferromagnets and heavy elements with strong spin orbit coupling the magnetoresistance is often dominated by tunneling anisotropic magnetoresistance (TAMR). This makes conventional DC spin injection techniques impractical for determining the spin relaxation time ($τ_s$). Here, we show that this obstacle for measurements of $τ_s$ can be overcome by 2nd harmonic spin-injec… ▽ More In tunnel junctions between ferromagnets and heavy elements with strong spin orbit coupling the magnetoresistance is often dominated by tunneling anisotropic magnetoresistance (TAMR). This makes conventional DC spin injection techniques impractical for determining the spin relaxation time ($τ_s$). Here, we show that this obstacle for measurements of $τ_s$ can be overcome by 2nd harmonic spin-injection-magnetoresistance (SIMR). In the 2nd harmonic signal the SIMR is comparable in magnitude to TAMR, thus enabling Hanle-induced SIMR as a powerful tool to directly determine $τ_s$. Using this approach we determined the spin relaxation time of Pt and Ta and their temperature dependences. The spin relaxation in Pt seems to be governed by Elliott-Yafet mechanism due to a constant resistivity $\times$spin relaxation time product over a wide temperature range. △ Less

Submitted 8 May, 2017; originally announced May 2017.

Comments: 7 pages, 4 figures

Journal ref: Phys. Rev. B 96, 134421 (2017)

Spin-orbit torque in MgO/CoFeB/Ta/CoFeB/MgO symmetric structure with interlayer antiferromagnetic coupling

Authors: G. Y. Shi, C. H. Wan, Y. S. Chang, F. Li, X. J. Zhou, P. X. Zhang, J. W. Cai, X. F. Han, F. Pan, C. Song

Abstract: Spin current generated by spin Hall effect in the heavy metal would diffuse up and down to adjacent ferromagnetic layers and exert torque on their magnetization, called spin-orbit torque. Antiferromagnetically coupled trilayers, namely the so-called synthetic antiferromagnets (SAF), are usually employed to serve as the pinned layer of spintronic devices based on spin valves and magnetic tunnel jun… ▽ More Spin current generated by spin Hall effect in the heavy metal would diffuse up and down to adjacent ferromagnetic layers and exert torque on their magnetization, called spin-orbit torque. Antiferromagnetically coupled trilayers, namely the so-called synthetic antiferromagnets (SAF), are usually employed to serve as the pinned layer of spintronic devices based on spin valves and magnetic tunnel junctions to reduce the stray field and/or increase the pinning field. Here we investigate the spin-orbit torque in MgO/CoFeB/Ta/CoFeB/MgO perpendicularly magnetized multilayer with interlayer antiferromagnetic coupling. It is found that the magnetization of two CoFeB layers can be switched between two antiparallel states simultaneously. This observation is replicated by the theoretical calculations by solving Stoner-Wohlfarth model and Landau-Lifshitz-Gilbert equation. Our findings combine spin-orbit torque and interlayer coupling, which might advance the magnetic memories with low stray field and low power consumption. △ Less

Submitted 17 February, 2017; originally announced February 2017.

Comments: 21 pages, 4 figures, Accepted by Phys. Rev. B

Journal ref: Phys. Rev. B 95, 104435 (2017)

Negative thermal expansion and local lattice distortion in the (Sc1-xTix)F3 and related solid solutions

Authors: Xiaojian Wang, Jun Chen, Fei Han, Yang Ren, Tao Wang, Jinxia Deng, Xianran Xing

Abstract: Negative thermal expansion (NTE) is unusual but important property for control of thermal expansion. In the present study, the chemical modification is utilized to engineer controllable thermal expansion in cubic NTE ScF3. A broad window of the coefficient of thermal expansion (CTE = -1.51 ~ -3.4*10^-6 K-1, 300-800 K) has been achieved in Sc1-xMxF3 (M = Ti, Al and Ga). The long-range crystallograp… ▽ More Negative thermal expansion (NTE) is unusual but important property for control of thermal expansion. In the present study, the chemical modification is utilized to engineer controllable thermal expansion in cubic NTE ScF3. A broad window of the coefficient of thermal expansion (CTE = -1.51 ~ -3.4*10^-6 K-1, 300-800 K) has been achieved in Sc1-xMxF3 (M = Ti, Al and Ga). The long-range crystallographic structure of (Sc1-xTix)F3 adheres to the cubic Pm-3m symmetry according to the analysis of high-energy synchrotron X-ray powder diffraction. Pair distribution function (PDF) analysis of synchrotron X-ray total scattering was performed to investigate the local lattice distortion. It was found that the weakness of NTE has a close correlation with the local lattice distortion. Based on the coupled rotation model, it is presumably that this local distortion might dampen the transverse vibration of F atoms and thus reduce NTE. The present work provides a possible reference for the design of controllable NTE in open framework solids. △ Less

Submitted 8 December, 2016; originally announced December 2016.

Comments: main: 18 pages, 4 figures; supporting information: 10 pages, 8 figures, 1 table

Superconductivity and multiple pressure-induced phases in BaPt$_2$As$_2$

Authors: C. Y. Guo, W. B. Jiang, M. Smidman, F. Han, C. D. Malliakas, B. Shen, Y. F. Wang, Y. Chen, X. Lu, M. G. Kanatzidis, H. Q. Yuan

Abstract: The newly discovered BaPt$_2$As$_2$ shows a structural distortion at around 275~K, followed by the emergence of superconductivity at lower temperatures. Here we identify the presence of charge density wave (CDW) order at room temperature and ambient pressure using single crystal x-ray diffraction, with both a superlattice and an incommensurate modulation, where there is a change of the superlattic… ▽ More The newly discovered BaPt$_2$As$_2$ shows a structural distortion at around 275~K, followed by the emergence of superconductivity at lower temperatures. Here we identify the presence of charge density wave (CDW) order at room temperature and ambient pressure using single crystal x-ray diffraction, with both a superlattice and an incommensurate modulation, where there is a change of the superlattice structure below $\simeq$ 275~K. Upon applying pressure, BaPt$_2$As$_2$ shows a rich temperature-pressure phase diagram with multiple pressure-induced transitions at high temperatures, the emergence or disappearance of which are correlated with sudden changes in the superconducting transition temperature $T_c$. These findings demonstrate that BaPt$_2$As$_2$ is a promising new system for studying competing interactions and the relationship between high-temperature electronic instabilities and superconductivity. △ Less

Submitted 24 October, 2016; originally announced October 2016.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 94, 184506 (2016)

La1-xBi1+xS3 (x~0.08): An n-Type Semiconductor

Authors: Fei Han, Huimei Liu, Christos D. Malliakas, Mihai Sturza, Duck Young Chung, Xiangang Wan, Mercouri G. Kanatzidis

Abstract: The new bismuth chalcogenide La0.92Bi1.08S3 crystallizes in the monoclinic space group C2/m with a = 28.0447(19) Å, b = 4.0722(2) Å, c = 14.7350(9) Å, and $β$ = 118.493(5)°. The structure of La0.92Bi1.08S3 is built up of NaCl-type Bi2S5 blocks, and BiS4 and LaS5 infinitely long chains forming a compact three-dimensional framework with parallel tunnels. Optical spectroscopy and resistivity measurem… ▽ More The new bismuth chalcogenide La0.92Bi1.08S3 crystallizes in the monoclinic space group C2/m with a = 28.0447(19) Å, b = 4.0722(2) Å, c = 14.7350(9) Å, and $β$ = 118.493(5)°. The structure of La0.92Bi1.08S3 is built up of NaCl-type Bi2S5 blocks, and BiS4 and LaS5 infinitely long chains forming a compact three-dimensional framework with parallel tunnels. Optical spectroscopy and resistivity measurements reveal a semiconducting behavior with a band gap of ~ 1 eV and activation energy for transport of 0.36(1) eV. Thermopower measurements suggest the majority carriers of La0.92Bi1.08S3 are electrons. Heat capacity measurements indicate no phase transitions from 2 to 300 K. Band structure calculations at the density functional theory level confirm the semiconducting nature and the indirect gap of La0.92Bi1.08S3. △ Less

Submitted 26 June, 2016; originally announced June 2016.

Journal ref: Inorganic Chemistry 55(7), 3547-3552 (2016)

(CaO)(FeSe): A Layered Wide Gap Oxychalcogenide Semiconductor

Authors: Fei Han, Di Wang, Christos D. Malliakas, Mihai Sturza, Duck Young Chung, Xiangang Wan, Mercouri G. Kanatzidis

Abstract: A new iron-oxychalcogenide (CaO)(FeSe) was obtained which crystallizes in the orthorhombic space group Pnma (No. 62) with a = 5.9180(12) Å, b = 3.8802(8) Å, c = 13.193(3) Å. The unique structure of (CaO)(FeSe) is built up of a quasi-two-dimensional network of corrugated infinite layers of corner-shared FeSe2O2 tetrahedra that extend in the ab-plane. The corrugated layers composed of corner-shared… ▽ More A new iron-oxychalcogenide (CaO)(FeSe) was obtained which crystallizes in the orthorhombic space group Pnma (No. 62) with a = 5.9180(12) Å, b = 3.8802(8) Å, c = 13.193(3) Å. The unique structure of (CaO)(FeSe) is built up of a quasi-two-dimensional network of corrugated infinite layers of corner-shared FeSe2O2 tetrahedra that extend in the ab-plane. The corrugated layers composed of corner-shared FeSe2O2 tetrahedra stack along the c-axis with Ca2+ cations sandwiched between the layers. Optical spectroscopy and resistivity measurements reveal semiconducting behavior with an indirect optical band gap of around 1.8 eV and an activation energy of 0.19(1) eV. Electronic band structure calculations at the density function level predict a magnetic configuration as ground state and confirm the presence of an indirect wide gap in (CaO)(FeSe). △ Less

Submitted 26 June, 2016; originally announced June 2016.

Journal ref: Chemistry of Materials 27(16), 5695-5701 (2015)

Electrical control over perpendicular magnetization switching driven by spin-orbit torques

Authors: X. Zhang, C. H. Wan, Z. H. Yuan, Q. T. Zhang, H. Wu, L. Huang, W. J. Kong, C. Fang, U. Khan, X. F. Han

Abstract: Flexible control of magnetization switching by electrical manners is crucial for applications of spin-orbitronics. Besides of a switching current that is parallel to an applied field, a bias current that is normal to the switching current is introduced to tune the magnitude of effective damping-like and field-like torques and further to electrically control magnetization switching. Symmetrical and… ▽ More Flexible control of magnetization switching by electrical manners is crucial for applications of spin-orbitronics. Besides of a switching current that is parallel to an applied field, a bias current that is normal to the switching current is introduced to tune the magnitude of effective damping-like and field-like torques and further to electrically control magnetization switching. Symmetrical and asymmetrical control over the critical switching current by the bias current with opposite polarities is both realized in Pt/Co/MgO and $α$-Ta/CoFeB/MgO systems, respectively. This research not only identifies the influences of field-like and damping-like torques on switching process but also demonstrates an electrical method to control it. △ Less

Submitted 18 May, 2016; originally announced May 2016.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. B 94, 174434 (2016)

Gap state charge induced spin-dependent negative differential resistance in tunnel junctions

Authors: Jun Jiang, X. -G. Zhang, X. F. Han

Abstract: We propose and demonstrate through first-principles calculation a new spin-dependent negative differential resistance (NDR) mechanism in magnetic tunnel junctions (MTJ) with cubic cation disordered crystals (CCDC) AlO$_x$ or Mg$_{1-x}$Al$_x$O as barrier materials. The CCDC is a class of insulators whose band gap can be changed by cation doping. The gap becomes arched in an ultrathin layer due to t… ▽ More We propose and demonstrate through first-principles calculation a new spin-dependent negative differential resistance (NDR) mechanism in magnetic tunnel junctions (MTJ) with cubic cation disordered crystals (CCDC) AlO$_x$ or Mg$_{1-x}$Al$_x$O as barrier materials. The CCDC is a class of insulators whose band gap can be changed by cation doping. The gap becomes arched in an ultrathin layer due to the space charge formed from metal-induced gap states. With an appropriate combination of an arched gap and a bias voltage, NDR can be produced in either spin channel. This mechanism is applicable to 2D and 3D ultrathin junctions with a sufficiently small band gap that forms a large space charge. It provides a new way of controlling the spin-dependent transport in spintronic devices by an electric field. A generalized Simmons formula for tunneling current through junction with an arched gap is derived to show the general conditions under which ultrathin junctions may exhibit NDR. △ Less

Submitted 5 April, 2016; originally announced April 2016.

Comments: 6 pages, 7 figures

Long range phase coherencein double barrier magnetic tunnel junctions with large thick metallic quantum well

Authors: B. S. Tao, H. X. Yang, Y. L. Zuo, X. Devaux, G. Lengaigne, M. Hehn, D. Lacour, S. Andrieu, M. Chshiev, T. Hauet, F. Montaigne, S. Mangin, X. F. Han, Y. Lu

Abstract: Double barrier heterostructures are model systems for the study of electron tunneling and discrete energy levels in a quantum well (QW). Until now resonant tunneling phenomena in metallicQW have been observed for limited thicknesses (1-2 nm) under which electron phase coherence is conserved. In the present study we show evidence of QW resonance states in Fe QW up to12 nmthick and at room temperatu… ▽ More Double barrier heterostructures are model systems for the study of electron tunneling and discrete energy levels in a quantum well (QW). Until now resonant tunneling phenomena in metallicQW have been observed for limited thicknesses (1-2 nm) under which electron phase coherence is conserved. In the present study we show evidence of QW resonance states in Fe QW up to12 nmthick and at room temperature in fully epitaxial doubleMgAlOxbarrier magnetic tunnel junctions. The electron phase coherence displayed in this QWis of unprecedented quality because ofa homogenous interface phase shift due to the small lattice mismatch at the Fe/MgAlOx interface. The physical understanding of the critical role of interface strain on QW phase coherence will greatly promote the development of the spin-dependent quantum resonant tunneling applications. △ Less

Submitted 2 September, 2015; originally announced April 2016.

Comments: 16 pages, 3 figures 1 table

Spin-flip noise due to nonequilibrium spin accumulation

Authors: Liang Liu, Jiasen Niu, Huiqiang Guo, Jian Wei, D. L. Li, J. F. Feng, X. F. Han, J. M. D. Coey, X. -G. Zhang

Abstract: When current flows through a magnetic tunnel junction (MTJ), there is spin accumulation at the electrode-barrier interfaces if the magnetic moments of the two ferromagnetic electrodes are not aligned. Here we report that such nonequilibrium spin accumulation generates its own characteristic low frequency noise (LFN). Past work viewed the LFN in MTJs as an equilibrium effect arising from resistance… ▽ More When current flows through a magnetic tunnel junction (MTJ), there is spin accumulation at the electrode-barrier interfaces if the magnetic moments of the two ferromagnetic electrodes are not aligned. Here we report that such nonequilibrium spin accumulation generates its own characteristic low frequency noise (LFN). Past work viewed the LFN in MTJs as an equilibrium effect arising from resistance fluctuations ($S_R$) which a passively applied current ($I$) converts to measurable voltage fluctuations ($S_{V}=I^{2}S_{R}$). We treat the LFN associated with spin accumulation as a nonequilibrium effect, and find that the noise power can be fitted in terms of the spin-polarized current by $S_{I}f=aI\coth(\frac{I}{b})-ab$, resembling the form of the shot noise for a tunnel junction, but with current now taking the role of the bias voltage, and spin-flip probability taking the role of tunneling probability. △ Less

Submitted 22 December, 2015; originally announced December 2015.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 93, 180401 (2016)

Separating Inverse spin Hall voltage and spin rectification voltage by inverting spin injection direction

Authors: Wenxu Zhang, Bin Peng, Fangbin Han, Qiuru Wang, Wee Tee Soh, C K Ong, Wanli Zhang

Abstract: We develop a method for universally resolving the important issue of separating the inverse spin Hall effect (ISHE) from spin rectification effect (SRE) signal. This method is based on the consideration that the two effects depend on the spin injection direction: The ISHE is an odd function of the spin injection direction while the SRE is independent on it. Thus, inversion of the spin injection di… ▽ More We develop a method for universally resolving the important issue of separating the inverse spin Hall effect (ISHE) from spin rectification effect (SRE) signal. This method is based on the consideration that the two effects depend on the spin injection direction: The ISHE is an odd function of the spin injection direction while the SRE is independent on it. Thus, inversion of the spin injection direction changes the ISHE voltage signal, while SRE voltage remains. It applies generally to analyzing the different voltage contributions without fitting them to special line shapes. This fast and simple method can be used in a wide frequency range, and has the flexibility of sample preparation. △ Less

Submitted 6 December, 2015; originally announced December 2015.

Comments: 4 figures

Journal ref: Applied Physics Letters,108, 102405 (2016)

Giant Magneto-Seebeck Effect in Spin Valves

Authors: X. M. Zhang, C. H. Wan, Z. H. Yuan, H. Wu, Q. T. Zhang, X. Zhang, B. S. Tao, C. Fang, X. F. Han

Abstract: Giant magneto-Seebeck (GMS) effect was observed in Co/Cu/Co and NiFe/Cu/Co spin valves. Their Seebeck coefficients in parallel state was larger than that in antiparallel state, and GMS ratio defined as (SAP-SP)/SP could reach -9% in our case. The GMS originated not only from trivial giant magnetoresistance but also from spin current generated due to spin polarized thermoelectric conductivity in fe… ▽ More Giant magneto-Seebeck (GMS) effect was observed in Co/Cu/Co and NiFe/Cu/Co spin valves. Their Seebeck coefficients in parallel state was larger than that in antiparallel state, and GMS ratio defined as (SAP-SP)/SP could reach -9% in our case. The GMS originated not only from trivial giant magnetoresistance but also from spin current generated due to spin polarized thermoelectric conductivity in ferromagnetic materials and subsequent modulation of the spin current by spin configurations in spin valves. Simple Mott two-channel model reproduced a -11% GMS for the Co/Cu/Co spin valves, qualitatively consistent with our observations. The GMS effect could be applied simultaneously sensing temperature gradient and magnetic field and also be possibly applied to determine spin polarization of thermoelectric conductivity and Seebeck coefficient in ferromagnetic thin films. △ Less

Submitted 11 June, 2015; originally announced June 2015.

Comments: 4 pages and 5 figures in maintext. 2 pages and figures in supplementary information

Determining Spin Polarization of Seebeck Coefficients via Anomalous Nernst Effect

Authors: C. Fang, C. H. Wan, Z. H. Yuan, H. Wu, Q. T. Zhang, L. B. Mo, X. Zhang, X. F. Han

Abstract: Recently, Seebeck coefficients of ferromagnetic conductors are found to be spin-dependent. However straightforward method of accurately determining its spin polarization is still to be developed. Here, we have derived a linear dependence of anomalous Nernst coefficient on anomalous Hall angle with scaling factor related to spin polarization of Seebeck coefficient, which has been experimentally ver… ▽ More Recently, Seebeck coefficients of ferromagnetic conductors are found to be spin-dependent. However straightforward method of accurately determining its spin polarization is still to be developed. Here, we have derived a linear dependence of anomalous Nernst coefficient on anomalous Hall angle with scaling factor related to spin polarization of Seebeck coefficient, which has been experimentally verified in [Co/Pt]n superlattices. Based on the dependence, we have also evaluated spin polarization of Seebeck coefficient of some ferromagnetic conductors. Besides, we have also found a new mechanism to generate pure spin current from temperature gradient in ferromagnetic/nonmagnetic hybrid system, which could improve efficiency from thermal energy to spin current. △ Less

Submitted 28 May, 2015; originally announced May 2015.

Comments: 5 pages and 4 figures in maintext and a supplementary material with 4 supplementary figures

Observation of pure inverse spin Hall effect in ferromagnetic metals by FM/AFM exchange bias structures

Authors: H. Wu, C. H. Wan, Z. H. Yuan, X. Zhang, J. Jiang, Q. T. Zhang, Z. C. Wen, X. F. Han

Abstract: We report that the spin current generated by spin Seebeck effect (SSE) in yttrium iron garnet (YIG) can be detected by a ferromagnetic metal (NiFe). By using the FM/AFM exchange bias structure (NiFe/IrMn), inverse spin Hall effect (ISHE) and planar Nernst effect (PNE) of NiFe can be unambiguously separated, allowing us to observe a pure ISHE signal. After eliminating the in plane temperature gradi… ▽ More We report that the spin current generated by spin Seebeck effect (SSE) in yttrium iron garnet (YIG) can be detected by a ferromagnetic metal (NiFe). By using the FM/AFM exchange bias structure (NiFe/IrMn), inverse spin Hall effect (ISHE) and planar Nernst effect (PNE) of NiFe can be unambiguously separated, allowing us to observe a pure ISHE signal. After eliminating the in plane temperature gradient in NiFe, we can even observe a pure ISHE signal without PNE from NiFe itself. It is worth noting that a large spin Hall angle (0.098) of NiFe is obtained, which is comparable with Pt. This work provides a kind of FM/AFM exchange bias structures to detect the spin current by charge signals, and highlights ISHE in ferromagnetic metals can be used in spintronic research and applications. △ Less

Submitted 17 July, 2015; v1 submitted 26 May, 2015; originally announced May 2015.

Structural and magnetic phase transitions near optimal superconductivity in BaFe$_2$(As$_{1-x}$P$_x$)$_2$

Authors: Ding Hu, Xingye Lu, Wenliang Zhang, Huiqian Luo, Shiliang Li, Peipei Wang, Genfu Chen, Fei Han, Shree R. Banjara, A. Sapkota, A. Kreyssig, A. I. Goldman, Z. Yamani, Christof Niedermayer, Markos Skoulatos, Robert Georgii, T. Keller, Pengshuai Wang, Weiqiang Yu, Pengcheng Dai

Abstract: We use nuclear magnetic resonance (NMR), high-resolution x-ray and neutron scattering to study structural and magnetic phase transitions in phosphorus-doped BaFe$_2$(As$_{1-x}$P$_x$)$_2$. Previous transport, NMR, specific heat, and magnetic penetration depth measurements have provided compelling evidence for the presence of a quantum critical point (QCP) near optimal superconductivity at $x=0.3$.… ▽ More We use nuclear magnetic resonance (NMR), high-resolution x-ray and neutron scattering to study structural and magnetic phase transitions in phosphorus-doped BaFe$_2$(As$_{1-x}$P$_x$)$_2$. Previous transport, NMR, specific heat, and magnetic penetration depth measurements have provided compelling evidence for the presence of a quantum critical point (QCP) near optimal superconductivity at $x=0.3$. However, we show that the tetragonal-to-orthorhombic structural ($T_s$) and paramagnetic to antiferromagnetic (AF, $T_N$) transitions in BaFe$_2$(As$_{1-x}$P$_x$)$_2$ are always coupled and approach to $T_N\approx T_s \ge T_c$ ($\approx 29$ K) for $x=0.29$ before vanishing abruptly for $x\ge 0.3$. These results suggest that AF order in BaFe$_2$(As$_{1-x}$P$_x$)$_2$ disappears in a weakly first order fashion near optimal superconductivity, much like the electron-doped iron pnictides with an avoided QCP. △ Less

Submitted 31 March, 2015; originally announced March 2015.

Comments: 8 pages, 8 figures. including supplementary, Accepted by Physical Review Letters

Journal ref: Phys. Rev. Lett. 114, 157002 (2015)

Modelling Dynamical Fluorescent Micro Thermal Imaging of the Heat Diffusion in the La5Ca9Cu24O41 Spin Ladder Compound

Authors: E. I. Khadikova, M. Montagnese, F. de Haan, P. H. M. van Loosdrecht

Abstract: The dynamical fluorescent microthermal imaging (FMI) experiment has been used to investigate the phonon-magnon interaction in the 1D Heisenberg antiferromagnet La5Ca9Cu24O41. This material shows highly anisotropic heat conductivity due to the efficient magnetic heat transport along the spin ladders in the compound. To extract information on the phonon-magnon interaction we modelled the dynamic hea… ▽ More The dynamical fluorescent microthermal imaging (FMI) experiment has been used to investigate the phonon-magnon interaction in the 1D Heisenberg antiferromagnet La5Ca9Cu24O41. This material shows highly anisotropic heat conductivity due to the efficient magnetic heat transport along the spin ladders in the compound. To extract information on the phonon-magnon interaction we modelled the dynamic heat transport experiment using a two temperature model approach, taking both the crystal as well as the PMMA/EuTTA fluorescent heat imaging layer into account. The simulations are carried out by the finite element method using COMSOL Multiphysics Heat Transfer Module. The results of the numerical calculations are expected to be used for the data analysis of the experimental studies. △ Less

Submitted 12 December, 2014; v1 submitted 14 November, 2014; originally announced November 2014.

Comments: 5 pages, 3 figures, 2014 COMSOL Conference, Cambridge

Low frequency noise peak near magnon emission energy in magnetic tunnel junctions

Authors: Liang Liu, Li Xiang, Huiqiang Guo, Jian Wei, D. L. Li, Z. H. Yuan, J. F. Feng, X. F. Han, J. M. D. Coey

Abstract: We report on the low frequency (LF) noise measurements in magnetic tunnel junctions (MTJs) below 4 K and at low bias, where the transport is strongly affected by scattering with magnons emitted by hot tunnelling electrons, as thermal activation of magnons from the environment is suppressed. For both CoFeB/MgO/CoFeB and CoFeB/AlO$_{x}$/CoFeB MTJs, enhanced LF noise is observed at bias voltage aroun… ▽ More We report on the low frequency (LF) noise measurements in magnetic tunnel junctions (MTJs) below 4 K and at low bias, where the transport is strongly affected by scattering with magnons emitted by hot tunnelling electrons, as thermal activation of magnons from the environment is suppressed. For both CoFeB/MgO/CoFeB and CoFeB/AlO$_{x}$/CoFeB MTJs, enhanced LF noise is observed at bias voltage around magnon emission energy, forming a peak in the bias dependence of noise power spectra density, independent of magnetic configurations. The noise peak is much higher and broader for unannealed AlO$_{x}$-based MTJ, and besides Lorentzian shape noise spectra in the frequency domain, random telegraph noise (RTN) is visible in the time traces. During repeated measurements the noise peak reduces and the RTN becomes difficult to resolve, suggesting defects being annealed. The Lorentzian shape noise spectra can be fitted with bias-dependent activation of RTN, with the attempt frequency in the MHz range, consistent with magnon dynamics. These findings suggest magnon-assisted activation of defects as the origin of the enhanced LF noise. △ Less

Submitted 29 October, 2014; v1 submitted 14 October, 2014; originally announced October 2014.

Comments: 6 pages, 5 figures

Journal ref: AIP Advances 4, 127102 (2014)

Magnetism and superconductivity in Sr$_2$VFeAsO$_3$ revealed by $^{75}$As- and $^{51}$V-NMR under elevated pressures

Authors: Keiji Ueshima, Fei Han, Xiyu Zhu, Hai-Hu Wen, Shinji Kawasaki, Guo-qing Zheng

Abstract: We report $^{75}$As- and $^{51}$V-nuclear magnetic resonance (NMR) measurements on the iron-based superconductor Sr$_2$VFeAsO$_3$ with alternating stacks structure. We find that the $^{75}$As nuclear spin-spin relaxation rate ($1/T_2$) shows a pronounced peak at $T_N$ = 165 K, below which the resonance peak shifts to a higher frequency due to the onset of an internal magnetic field. The $^{51}$V s… ▽ More We report $^{75}$As- and $^{51}$V-nuclear magnetic resonance (NMR) measurements on the iron-based superconductor Sr$_2$VFeAsO$_3$ with alternating stacks structure. We find that the $^{75}$As nuclear spin-spin relaxation rate ($1/T_2$) shows a pronounced peak at $T_N$ = 165 K, below which the resonance peak shifts to a higher frequency due to the onset of an internal magnetic field. The $^{51}$V spectrum does not shift, but is broadened below $T_N$. We conclude that the Fe electrons oder antiferromagnetically below $T_N$ with a magnetic moment $m_{Fe}$ $\sim$ 0.4 $μ_B$. Application of external pressure up to 2.4 GPa reduces $T_N$ in a rate of $-$40 K/GPa, and enhances the superconducting transition temperature $T_c$ in a rate of 2 K/GPa. The pressure-temperature phase diagram for Sr$_2$VFeAsO$_3$ shows that superconductivity coexists with antiferromagnetism over a wide pressure range with an unprecedented high $T_c$ up to 36.5 K. △ Less

Submitted 13 May, 2014; originally announced May 2014.

Comments: 14 pages, 7 figures

Journal ref: Phys. Rev. B. 89, 184506 (2014)

Thermal transport due to quantum interference in magnetic tunnel junctions

Authors: J. F. Feng, D. P. Liu, Q. L. Ma, H. X. Wei, X. F. Han

Abstract: We study the thermal transport in magnetic tunnel junctions. Thermal gradients across the tunneling barrier appear around the Fowler-Nordheim tunneling regime, due to the current-induced heat caused by quantum interference. Both thermovoltage and thermal temperature follow a linear response with the applied current, which is an evidence for a thermoelectric effect. By increasing the barrier transp… ▽ More We study the thermal transport in magnetic tunnel junctions. Thermal gradients across the tunneling barrier appear around the Fowler-Nordheim tunneling regime, due to the current-induced heat caused by quantum interference. Both thermovoltage and thermal temperature follow a linear response with the applied current, which is an evidence for a thermoelectric effect. By increasing the barrier transparency, the dynamics of thermoelectric properties is observed with the current. Accordingly, a large range of the Seebeck coefficient, 10 - 1000 μV/K, has been obtained in magnetic tunnel junctions. △ Less

Submitted 21 August, 2013; originally announced August 2013.

Comments: 5 pages, 5 figures

Doping effect of Cu and Ni impurities on the Fe-based superconductor Ba0.6K0.4Fe2As2

Authors: Peng Cheng, Bing Shen, Fei Han, Hai-Hu Wen

Abstract: Copper and Nickel impurities have been doped into the iron pnictide superconductor Ba0.6K0.4Fe2As2. Resistivity measurements reveal that Cu and Ni impurities suppress superconducting transition temperature T_c with rates of ΔT_c/Cu-1% = -3.5 K and ΔT_c/Ni-1% = -2.9 K respectively. Temperature dependence of Hall coefficient R_H of these two series of samples show that both Cu-doping and Ni-doping c… ▽ More Copper and Nickel impurities have been doped into the iron pnictide superconductor Ba0.6K0.4Fe2As2. Resistivity measurements reveal that Cu and Ni impurities suppress superconducting transition temperature T_c with rates of ΔT_c/Cu-1% = -3.5 K and ΔT_c/Ni-1% = -2.9 K respectively. Temperature dependence of Hall coefficient R_H of these two series of samples show that both Cu-doping and Ni-doping can introduce electrons into Ba0.6K0.4Fe2As2. With more doping, the sign of R_H gradually changes from positive to negative, while the changing rate of Cu-doped samples is much faster than that of Ni-doped ones. Combining with the results of first-principles calculations published previously and the non-monotonic evolution of the Hall coefficient in the low temperature region, we argue that when more Cu impurities were introduced into Ba0.6K0.4Fe2As2, the removal of Fermi spectral weight in the hole-like Fermi surfaces is much stronger than that in the electron-like Fermi surfaces, which is equivalent to significant electron doping effect. DC magnetization and the lattice constants analysis reveal that static magnetic moments and notable lattice compression have been formed in Cu-doped samples. It seems that the superconductivity can be suppressed by the impurities disregard whether they are magnetic or nonmagnetic in nature. This gives strong support to a pairing gap with a sign reversal, like S^\pm. However, the relatively slow suppression rates of T_c show the robustness of superconductivity of Ba0.6K0.4Fe2As2 against impurities, implying that multi-pairing channels may exist in the system. △ Less

Submitted 16 April, 2013; originally announced April 2013.

Comments: 7 pages, 7 figures

Journal ref: EPL 104 (2013) 37007

BaFe2Se2O as an Iron-Based Mott Insulator with Antiferromagnetic Order

Authors: Fei Han, Xiangang Wan, Bing Shen, Hai-Hu Wen

Abstract: A new compound with a quasi-two-dimensional array of FeSe3O tetrahedra and an orthorombic structure, namely BaFe2Se2O, has been successfully fabricated. Experimental results show that this compound is an insulator and has an antiferromagnetic (AF) transition at 240 K. Band structure calculation reveals the narrowing of Fe 3d bands near the Fermi energy, which leads to the localization of magnetism… ▽ More A new compound with a quasi-two-dimensional array of FeSe3O tetrahedra and an orthorombic structure, namely BaFe2Se2O, has been successfully fabricated. Experimental results show that this compound is an insulator and has an antiferromagnetic (AF) transition at 240 K. Band structure calculation reveals the narrowing of Fe 3d bands near the Fermi energy, which leads to the localization of magnetism and the Mott insulating behavior. The large distances between the Fe atoms perhaps are responsible for the characters. Linear response calculation further indicates a strong in-plane AF exchange $J$, this can account for the enhanced magnetic susceptibility (which has a maximum at about 450 K) above the Neel temperature. △ Less

Submitted 11 July, 2012; v1 submitted 26 June, 2012; originally announced June 2012.

Comments: submitted to PRL on 2 May 2012, resubmitted to PRB on 31 May 2012, and accepted by PRB on 5 July 2012

Journal ref: Physical Review B 86, 014411 (2012)

Metastable superconducting state in quenched KxFe2-ySe2

Authors: Fei Han, Huan Yang, Bing Shen, Zheng-Yu Wang, Chun-Hong Li, Hai-Hu Wen

Abstract: By direct quenching or post-annealing followed by quenching, we have successfully obtained a series of KxFe2-ySe2 samples with different properties. It is found that the samples directly quenched in the cooling process of growth show superconductivity and the one cooled with furnace is insulating even though their stoichiometries are similar. The sample cooled with furnace can be tuned from insula… ▽ More By direct quenching or post-annealing followed by quenching, we have successfully obtained a series of KxFe2-ySe2 samples with different properties. It is found that the samples directly quenched in the cooling process of growth show superconductivity and the one cooled with furnace is insulating even though their stoichiometries are similar. The sample cooled with furnace can be tuned from insulating to superconducting by post-annealing and then quenching. Based on the two points mentioned above, we conclude that the superconducting state in KxFe2-ySe2 is metastable, and quenching is the key point to achieve the superconducting state. The similar stoichiometries of all the non-superconducting and superconducting samples indicate that the iron valence doesn't play a decisive role in determining whether a KxFe2-ySe2 sample is superconducting. Combining with the result got in the KxFe2-ySe2 thin films prepared by molecular beam epitaxy (MBE), we argue that our superconducting sample partly corresponds to the phase without iron vacancies as evidenced by scanning tunnelling microscopy (STM) and the insulating sample mainly corresponds to the phase with the $\sqrt{5}\times\sqrt{5}$ vacancy order. Quenching may play a role of freezing the phase without iron vacancies. △ Less

Submitted 11 June, 2012; originally announced June 2012.

Comments: 9 pages, 7figures, this article is a new version of arXiv:1103.1347 with new data added

Journal ref: Philosophical Magazine 92(2012), 2553-2562