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Cuprate-like Electronic Structures in Infinite-Layer Nickelates with Substantial Hole Dopings
Authors:
X. Ding,
Y. Fan,
X. X. Wang,
C. H. Li,
Z. T. An,
J. H. Ye,
S. L. Tang,
M. Y. N. Lei,
X. T. Sun,
N. Guo,
Z. H. Chen,
S. Sangphet,
Y. L. Wang,
H. C. Xu,
R. Peng,
D. L. Feng
Abstract:
The superconducting infinite-layer (IL) nickelates offer a new platform for investigating the long-standing problem of high-temperature superconductivity. Many models were proposed to understand its superconducting mechanisms based on the calculated electronic structure, and the multiple Fermi surfaces and multiple orbitals involved create complications and controversial conclusions. Over the past…
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The superconducting infinite-layer (IL) nickelates offer a new platform for investigating the long-standing problem of high-temperature superconductivity. Many models were proposed to understand its superconducting mechanisms based on the calculated electronic structure, and the multiple Fermi surfaces and multiple orbitals involved create complications and controversial conclusions. Over the past 5 years, the lack of direct measurements of the electronic structure has hindered the understanding of nickelate superconductors. Here we fill this gap by directly resolving the electronic structures of the parent compound LaNiO$_2$ and superconducting La$_{0.8}$Ca$_{0.2}$NiO$_2$ using angle-resolved photoemission spectroscopy (ARPES). We find that their Fermi surfaces consist of a quasi-two-dimensional (quasi-2D) hole pocket and a three-dimensional (3D) electron pocket at the Brillouin zone corner, whose volumes change upon Ca doping. The Fermi surface topology and band dispersion of the hole pocket closely resemble those observed in hole-doped cuprates. However, the cuprate-like band exhibits significantly higher hole doping in superconducting La$_{0.8}$Ca$_{0.2}$NiO$_2$ compared to superconducting cuprates, highlighting the disparities in the electronic states of the superconducting phase. Our observations highlight the novel aspects of the IL nickelates, and pave the way toward the microscopic understanding of the IL nickelate family and its superconductivity.
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Submitted 5 June, 2024; v1 submitted 12 March, 2024;
originally announced March 2024.
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Spin-phonon coupling driven Charge density wave in a Kagome Magnet
Authors:
H. Miao,
T. T. Zhang,
H. X. Li,
G. Fabbris,
A. H. Said,
R. Tartaglia,
T. Yilmaz,
E. Vescovo,
J. -X. Yin,
S. Murakami,
L. X. Feng,
K. Jiang,
X. L. Wu,
A. F. Wang,
S. Okamoto,
Y. L. Wang,
H. N. Lee
Abstract:
The intertwining between spin, charge, and lattice degrees of freedom can give rise to unusual macroscopic quantum states, including high-temperature superconductivity and quantum anomalous Hall effects. Recently, a charge density wave (CDW) is observed in the kagome antiferromagnet FeGe, indicative of possible intertwining physics. An outstanding question is that whether magnetic correlation is f…
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The intertwining between spin, charge, and lattice degrees of freedom can give rise to unusual macroscopic quantum states, including high-temperature superconductivity and quantum anomalous Hall effects. Recently, a charge density wave (CDW) is observed in the kagome antiferromagnet FeGe, indicative of possible intertwining physics. An outstanding question is that whether magnetic correlation is fundamental for the spontaneous spatial symmetry breaking orders. Here, utilizing elastic and high-resolution inelastic x-ray scattering, we discover a charge dimerization superlattice that coexists with the 2$\times$2$\times$1 CDW in the kagome sublattice. Most interestingly, between the magnetic and CDW transition temperature, the phonon dynamical structure factor shows a giant phonon-energy hardening and a substantial phonon linewidth broadening near the charge-dimerization wavevectors, both signaling the spin-phonon coupling. By first principles calculations, we show that both the static and dynamic spin excitations intertwine with the phonon to drive the spatial symmetry breaking.
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Submitted 22 December, 2022; v1 submitted 12 October, 2022;
originally announced October 2022.
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Flat Band Induced Negative Magnetoresistance in Multi-Orbital Kagome Metal
Authors:
Jie Zhang,
T. Yilmaz,
J. W. R. Meier,
J. Y. Pai,
J. Lapano,
H. X. Li,
K. Kaznatcheev,
E. Vescovo,
A. Huon,
M. Brahlek,
T. Z. Ward,
B. Lawrie,
R. G. Moore,
H. N. Lee,
Y. L. Wang,
H. Miao,
B. Sales
Abstract:
Electronic flat band systems are a fertile platform to host correlation-induced quantum phenomena such as unconventional superconductivity, magnetism and topological orders. While flat band has been established in geometrically frustrated structures, such as the kagome lattice, flat band-induced correlation effects especially in those multi-orbital bulk systems are rarely seen. Here we report nega…
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Electronic flat band systems are a fertile platform to host correlation-induced quantum phenomena such as unconventional superconductivity, magnetism and topological orders. While flat band has been established in geometrically frustrated structures, such as the kagome lattice, flat band-induced correlation effects especially in those multi-orbital bulk systems are rarely seen. Here we report negative magnetoresistance and signature of ferromagnetic fluctuations in a prototypical kagome metal CoSn, which features a flat band in proximity to the Fermi level. We find that the magnetoresistance is dictated by electronic correlations via Fermi level tuning. Combining with first principles and model calculations, we establish flat band-induced correlation effects in a multi-orbital electronic system, which opens new routes to realize unconventional superconducting and topological states in geometrically frustrated metals.
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Submitted 19 May, 2021; v1 submitted 18 May, 2021;
originally announced May 2021.
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The Hund's Superconductor Li(Fe,Co)As
Authors:
H. Miao,
Y. L. Wang,
J. -X. Yin,
J. Zhang,
S. Zhang,
M. Z. Hasan,
R. Yang,
X. C. Wang,
C. Q. Jin,
T. Qian,
H. Ding,
H. -L. Lee,
G. Kotliar
Abstract:
We combine transport, angle-resolved photoemission spectroscopy and scanning tunneling spectroscopy to investigate several low energy manifestations of the Hund coupling in a canonical FeSC family Li(Fe,Co)As. We determine the doping dependence of the coherent-incoherent crossover temperature and the quasi-particle effective mass enhancement in the normal state. Our tunneling spectroscopy result i…
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We combine transport, angle-resolved photoemission spectroscopy and scanning tunneling spectroscopy to investigate several low energy manifestations of the Hund coupling in a canonical FeSC family Li(Fe,Co)As. We determine the doping dependence of the coherent-incoherent crossover temperature and the quasi-particle effective mass enhancement in the normal state. Our tunneling spectroscopy result in the superconducting state supports the idea that superconductivity emerging from Hund's metal state displays a universal maximal superconducting gap vs transition temperature (2$Δ_{max}/k_{B}T_{c}$) value, which is independent of doping level and $T_{c}$.
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Submitted 23 November, 2020;
originally announced November 2020.
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EDRIXS: An open source toolkit for simulating spectra of resonant inelastic x-ray scattering
Authors:
Y. L. Wang,
G. Fabbris,
M. P. M. Dean,
G. Kotliar
Abstract:
Resonant inelastic x-ray scattering (RIXS) has become a very powerful experimental technique to probe a broad range of intrinsic elementary excitations, for example, from low energy phonons and (bi-)magnons to high energy $d$-$d$, charge-transfer and plasmons excitations in strongly correlated electronic systems. Due to the complexity of the RIXS cross-section and strong core-hole effects, theoret…
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Resonant inelastic x-ray scattering (RIXS) has become a very powerful experimental technique to probe a broad range of intrinsic elementary excitations, for example, from low energy phonons and (bi-)magnons to high energy $d$-$d$, charge-transfer and plasmons excitations in strongly correlated electronic systems. Due to the complexity of the RIXS cross-section and strong core-hole effects, theoretical simulation of the experimental RIXS spectra is still a difficult task which hampers the understanding of RIXS spectra and the development of the RIXS technique. In this paper, we present an open source toolkit (dubbed EDRIXS) to facilitate the simulations of RIXS spectra of strongly correlated materials based on exact diagonalization (ED) of certain model Hamiltonians. The model Hamiltonian can be from a single atom, small cluster or Anderson impurity model, with model parameters from density functional theory plus Wannier90 or dynamical mean-field theory calculations. The spectra of x-ray absorption spectroscopy (XAS) and RIXS are then calculated using Krylov subspace techniques. This toolkit contains highly efficient ED, XAS and RIXS solvers written in modern Fortran 90 language and a convenient Python library used to prepare inputs and set up calculations. We first give a short introduction to RIXS spectroscopy, and then we discuss the implementation details of this toolkit. Finally, we show three examples to demonstrate its usage.
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Submitted 19 December, 2018; v1 submitted 13 December, 2018;
originally announced December 2018.
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Observation of Double Weyl Phonons in Parity-Breaking FeSi
Authors:
H. Miao,
T. T. Zhang,
L. Wang,
D. Meyers,
A. H. Said,
Y. L. Wang,
Y. G. Shi,
H. M. Weng,
Z. Fang,
M. P. M. Dean
Abstract:
Condensed matter systems have now become a fertile ground to discover emerging topological quasi-particles with symmetry protected modes. While many studies have focused on Fermionic excitations, the same conceptual framework can also be applied to bosons yielding new types of topological states. Motivated by the recent theoretical prediction of double-Weyl phonons in transition metal monosilicide…
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Condensed matter systems have now become a fertile ground to discover emerging topological quasi-particles with symmetry protected modes. While many studies have focused on Fermionic excitations, the same conceptual framework can also be applied to bosons yielding new types of topological states. Motivated by the recent theoretical prediction of double-Weyl phonons in transition metal monosilicides [Phys. Rev. Lett. 120, 016401 (2018)], we directly measured the phonon dispersion in parity-breaking FeSi using inelastic x-ray scattering. By comparing the experimental data with theoretical calculations, we make the first observation of double-Weyl points in FeSi, which will be an ideal material to explore emerging Bosonic excitations and its topologically non-trivial properties.
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Submitted 27 April, 2018;
originally announced April 2018.
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Reentrant Metallic Behavior in the Weyl Semimetal NbP
Authors:
J. Xu,
D. E. Bugaris,
Z. L. Xiao,
Y. L. Wang,
D. Y. Chung,
M. G. Kanatzidis,
W. K. Kwok
Abstract:
We report the occurrence of reentrant metallic behavior in the Weyl semimetal NbP. When the applied magnetic field $H$ is above a critical value $H_c$, a reentrance appears as a peak in the temperature dependent resistivity $ρ_{xx}(T)$ at $T$ = $T_p$, similar to that observed in graphite where it was attributed to local superconductivity. The $T_p(H)$ relationship follows a power-law dependence…
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We report the occurrence of reentrant metallic behavior in the Weyl semimetal NbP. When the applied magnetic field $H$ is above a critical value $H_c$, a reentrance appears as a peak in the temperature dependent resistivity $ρ_{xx}(T)$ at $T$ = $T_p$, similar to that observed in graphite where it was attributed to local superconductivity. The $T_p(H)$ relationship follows a power-law dependence $T_p\sim(H-H_c)^{1/v}$ where $v$ can be derived from the temperature dependence of the zero-field resistivity $ρ_0(T) \sim T^v$. From concurrent measurements of the transverse $ρ_{xx}(T)$ and Hall $ρ_{xy}(T)$ magnetoresistivities, we reveal a clear correlation between the rapidly increasing $ρ_{xy}(T)$ and the occurrence of a peak in the $ρ_{xx}(T)$ curve. Quantitative analysis indicates that the reentrant metallic behavior arises from the competition of the magneto conductivity $σ_{xx}(T)$ with an additional component $Δσ_{xx}(T)=κ_Hσ_{xx}(T)$ where $κ_H=[ρ_{xy}(T)/ρ_{xx}(T)]^2$ is the Hall factor. We find that the Hall factor ($κ_H \approx 0.4$) at peak temperature $T_p$ is nearly field-independent, leading to the observed $T_p(H)$ relationship. Furthermore, the reentrant metallic behavior in $ρ_{xx}(T)$ also is reflected in the behavior of $ρ_{xx}(H)$ that ranges from non-saturating at $T>70$ K to saturation at liquid helium temperatures. The latter can be explained with the magnetic field dependence of the Hall factor $κ_H(H)$. Our studies demonstrate that a semiclassical theory can account for the 'anomalies' in the magnetotransport phenomena of NbP without invoking an exotic mechanism.
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Submitted 14 September, 2017;
originally announced September 2017.
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Origin of the Extremely Large Magnetoresistance in the Semimetal YSb
Authors:
J. Xu,
N. J. Ghimire,
J. S. Jiang,
Z. L. Xiao,
A. S. Botana,
Y. L. Wang,
Y. Hao,
J. E. Pearson,
W. K. Kwok
Abstract:
Electron-hole (e-h) compensation is a hallmark of multi-band semimetals with extremely large magnetoresistance (XMR) and has been considered to be the basis for XMR. Recent spectroscopic experiments, however, reveal that YSb with non-saturating magnetoresistance is uncompensated, questioning the e-h compensation scenario for XMR. Here we demonstrate with magnetoresistivity and angle dependent Shub…
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Electron-hole (e-h) compensation is a hallmark of multi-band semimetals with extremely large magnetoresistance (XMR) and has been considered to be the basis for XMR. Recent spectroscopic experiments, however, reveal that YSb with non-saturating magnetoresistance is uncompensated, questioning the e-h compensation scenario for XMR. Here we demonstrate with magnetoresistivity and angle dependent Shubnikov - de Haas (SdH) quantum oscillation measurements that YSb does have nearly perfect e-h compensation, with a density ratio of $0.95$ for electrons and holes. The density and mobility anisotropy of the charge carriers revealed in the SdH experiments allow us to quantitatively describe the magnetoresistance with an anisotropic multi-band model that includes contributions from all Fermi pockets. We elucidate the role of compensated multi-bands in the occurrence of XMR by demonstrating the evolution of calculated magnetoresistances for a single band and for various combinations of electron and hole Fermi pockets.
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Submitted 30 August, 2017; v1 submitted 26 August, 2017;
originally announced August 2017.
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Separation of Electron and Hole Dynamics in the Semimetal LaSb
Authors:
F. Han,
J. Xu,
A. S. Botana,
Z. L. Xiao,
Y. L. Wang,
W. G. Yang,
D. Y. Chung,
M. G. Kanatzidis,
M. R. Norman,
G. W. Crabtree,
W. K. Kwok
Abstract:
We report investigations on the magnetotransport in LaSb, which exhibits extremely large magnetoresistance (XMR). Foremost, we demonstrate that the resistivity plateau can be explained without invoking topological protection. We then determine the Fermi surface from Shubnikov - de Haas (SdH) quantum oscillation measurements and find good agreement with the bulk Fermi pockets derived from first pri…
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We report investigations on the magnetotransport in LaSb, which exhibits extremely large magnetoresistance (XMR). Foremost, we demonstrate that the resistivity plateau can be explained without invoking topological protection. We then determine the Fermi surface from Shubnikov - de Haas (SdH) quantum oscillation measurements and find good agreement with the bulk Fermi pockets derived from first principle calculations. Using a semiclassical theory and the experimentally determined Fermi pocket anisotropies, we quantitatively describe the orbital magnetoresistance, including its angle dependence. We show that the origin of XMR in LaSb lies in its high mobility with diminishing Hall effect, where the high mobility leads to a strong magnetic field dependence of the longitudinal magnetoconductance. Unlike a one-band material, when a system has two or more bands (Fermi pockets) with electron and hole carriers, the added conductance arising from the Hall effect is reduced, hence revealing the latent XMR enabled by the longitudinal magnetoconductance. With diminishing Hall effect, the magnetoresistivity is simply the inverse of the longitudinal magnetoconductivity, enabling the differentiation of the electron and hole contributions to the XMR, which varies with the strength and orientation of the magnetic field. This work demonstrates a convenient way to separate the dynamics of the charge carriers and to uncover the origin of XMR in multi-band materials with anisotropic Fermi surfaces. Our approach can be readily applied to other XMR materials.
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Submitted 7 September, 2017; v1 submitted 17 August, 2017;
originally announced August 2017.
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On the possibility to detect multipolar order in URu$_2$Si$_2$ by the electric quadrupolar transition of resonant elastic X-ray scattering
Authors:
Y. L. Wang,
G. Fabbris,
D. Meyers,
N. H. Sung,
R. E. Baumbach,
E. D. Bauer,
P. J. Ryan,
J. -W. Kim,
X. Liu,
M. P. M. Dean,
G. Kotliar,
X. Dai
Abstract:
Resonant elastic X-ray scattering is a powerful technique for measuring multipolar order parameters. In this paper, we theoretically and experimentally study the possibility of using this technique to detect the proposed multipolar order parameters in URu$_2$Si$_2$ at the U-$L_{3}$ edge with the electric quadrupolar transition. Based on an atomic model, we calculate the azimuthal dependence of the…
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Resonant elastic X-ray scattering is a powerful technique for measuring multipolar order parameters. In this paper, we theoretically and experimentally study the possibility of using this technique to detect the proposed multipolar order parameters in URu$_2$Si$_2$ at the U-$L_{3}$ edge with the electric quadrupolar transition. Based on an atomic model, we calculate the azimuthal dependence of the quadrupolar transition at the U-$L_{3}$ edge. The results illustrate the potential of this technique for distinguishing different multipolar order parameters. We then perform experiments on ultra-clean single crystals of URu$_2$Si$_2$ at the U-$L_{3}$ edge to search for the predicted signal, but do not detect any indications of multipolar moments within the experimental uncertainty. We theoretically estimate the orders of magnitude of the cross-section and the expected count rate of the quadrupolar transition and compare them to the dipolar transitions at the U-$M_4$ and U-$L_3$ edges, clarifying the difficulty in detecting higher order multipolar order parameters in URu$_2$Si$_2$ in the current experimental setup.
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Submitted 17 August, 2017;
originally announced August 2017.
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Effect of hexagonal patterned arrays and defect geometry on the critical current of superconducting films
Authors:
I. A. Sadovskyy,
Y. L. Wang,
Z. -L. Xiao,
W. -K. Kwok,
A. Glatz
Abstract:
Understanding the effect of pinning on the vortex dynamics in superconductors is a key factor towards controlling critical current values. Large-scale simulations of vortex dynamics can provide a rational approach to achieve this goal. Here, we use the time-dependent Ginzburg-Landau equations to study thin superconducting films with artificially created pinning centers arranged periodically in hex…
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Understanding the effect of pinning on the vortex dynamics in superconductors is a key factor towards controlling critical current values. Large-scale simulations of vortex dynamics can provide a rational approach to achieve this goal. Here, we use the time-dependent Ginzburg-Landau equations to study thin superconducting films with artificially created pinning centers arranged periodically in hexagonal lattices. We calculate the critical current density for various geometries of the pinning centers --- varying their size, strength, and density. Furthermore, we shed light upon the influence of pattern distortion on the magnetic-field-dependent critical current. We compare our result directly with available experimental measurements on patterned molybdenum-germanium films, obtaining good agreement. Our results give important systematic insights into the mechanisms of pinning in these artificial pinning landscapes and open a path for tailoring superconducting films with desired critical current behavior.
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Submitted 31 January, 2017; v1 submitted 27 October, 2016;
originally announced October 2016.
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Pinning, Flux Diodes, and Ratchets for Vortices Interacting with Conformal Pinning Arrays
Authors:
C. J. Olson Reichhardt,
Y. L. Wang,
Z. L. Xiao,
W. K. Kwok,
D. Ray,
C. Reichhardt,
B. Janko
Abstract:
A conformal pinning array can be created by conformally transforming a uniform triangular pinning lattice to produces a new structure in which the six-fold ordering of the original lattice is conserved but where there is a spatial gradient in the density of pinning sites. Here we examine several aspects of vortices interacting with conformal pinning arrays and how they can be used to create a flux…
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A conformal pinning array can be created by conformally transforming a uniform triangular pinning lattice to produces a new structure in which the six-fold ordering of the original lattice is conserved but where there is a spatial gradient in the density of pinning sites. Here we examine several aspects of vortices interacting with conformal pinning arrays and how they can be used to create a flux flow diode effect for driving vortices in different directions across the arrays. Under the application of an ac drive, a pronounced vortex ratchet effect occurs where the vortices flow in the easy direction of the array asymmetry. When the ac drive is applied perpendicular to the asymmetry direction of the array, it is possible to realize a transverse vortex ratchet effect where there is a generation of a dc flow of vortices perpendicular to the ac drive due to the creation of a noise correlation ratchet by the plastic motion of the vortices. We also examine vortex transport simulations in experiments and compare the pinning effectiveness of conformal arrays to uniform triangular pinning arrays. We find that a triangular array generally pins the vortices more effectively at the first matching field and below, while the conformal array is more effective at higher fields where interstitial vortex flow occurs.
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Submitted 11 February, 2016;
originally announced February 2016.
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Enhancing superconducting critical current by randomness
Authors:
Y. L. Wang,
L. R. Thoutam,
Z. L. Xiao,
B. Shen,
J. E. Pearson,
R. Divan,
L. E. Ocola,
G. W. Crabtree,
W. K. Kwok
Abstract:
The key ingredient of high critical currents in a type-II superconductor is defect sites that 'pin' vortices. Contrary to earlier understanding on nano-patterned artificial pinning, here we show unequivocally the advantages of a random pinscape over an ordered array in a wide magnetic field range. We reveal that the better performance of a random pinscape is due to the variation of its local-densi…
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The key ingredient of high critical currents in a type-II superconductor is defect sites that 'pin' vortices. Contrary to earlier understanding on nano-patterned artificial pinning, here we show unequivocally the advantages of a random pinscape over an ordered array in a wide magnetic field range. We reveal that the better performance of a random pinscape is due to the variation of its local-density-of-pinning-sites (LDOPS), which mitigates the motion of vortices. This is confirmed by achieving even higher enhancement of the critical current through a conformally mapped random pinscape, where the distribution of the LDOPS is further enlarged. The demonstrated key role of LDOPS in enhancing superconducting critical currents gets at the heart of random versus commensurate pinning. Our findings highlight the importance of random pinscapes in enhancing the superconducting critical currents of applied superconductors.
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Submitted 16 December, 2015;
originally announced December 2015.
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Origin of the turn-on temperature behavior in WTe$_2$
Authors:
Y. L. Wang,
L. R. Thoutam,
Z. L. Xiao,
J. Hu,
S. Das,
Z. Q. Mao,
J. Wei,
R. Divan,
A. Luican-Mayer,
G. W. Crabtree,
W. K. Kwok
Abstract:
A hallmark of materials with extremely large magnetoresistance (XMR) is the transformative 'turn-on' temperature behavior: when the applied magnetic field $H$ is above certain value, the resistivity versus temperature $ρ(T)$ curve shows a minimum at a field dependent temperature $T^*$, which has been interpreted as a magnetic-field-driven metal-insulator transition or attributed to an electronic s…
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A hallmark of materials with extremely large magnetoresistance (XMR) is the transformative 'turn-on' temperature behavior: when the applied magnetic field $H$ is above certain value, the resistivity versus temperature $ρ(T)$ curve shows a minimum at a field dependent temperature $T^*$, which has been interpreted as a magnetic-field-driven metal-insulator transition or attributed to an electronic structure change. Here, we demonstrate that $ρ(T)$ curves with turn-on behavior in the newly discovered XMR material WTe$_2$ can be scaled as MR $\sim(H/ρ_0)^m$ with $m\approx 2$ and $ρ_0$ being the resistivity at zero-field. We obtained experimentally and also derived from the observed scaling the magnetic field dependence of the turn-on temperature $T^* \sim (H-H_c)^ν$ with $ν\approx 1/2$, which was earlier used as evidence for a predicted metal-insulator transition. The scaling also leads to a simple quantitative expression for the resistivity $ρ^* \approx 2 ρ_0$ at the onset of the XMR behavior, which fits the data remarkably well. These results exclude the possible existence of a magnetic-field-driven metal-insulator transition or significant contribution of an electronic structure change to the low-temperature XMR in WTe$_2$. This work resolves the origin of the turn-on behavior observed in several XMR materials and also provides a general route for a quantitative understanding of the temperature dependence of MR in both XMR and non-XMR materials.
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Submitted 4 November, 2015; v1 submitted 23 October, 2015;
originally announced October 2015.
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Temperature dependent three-dimensional anisotropy of the magnetoresistance in WTe$_2$
Authors:
L. R. Thoutam,
Y. L. Wang,
Z. L. Xiao,
S. Das,
A. Luican-Mayer,
R. Divan,
G. W. Crabtree,
W. K. Kwok
Abstract:
Extremely large magnetoresistance (XMR) was recently discovered in WTe$_2$, triggering extensive research on this material regarding the XMR origin. Since WTe$_2$ is a layered compound with metal layers sandwiched between adjacent insulating chalcogenide layers, this material has been considered to be electronically two-dimensional (2D). Here we report two new findings on WTe$_2$: (1) WTe$_2$ is e…
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Extremely large magnetoresistance (XMR) was recently discovered in WTe$_2$, triggering extensive research on this material regarding the XMR origin. Since WTe$_2$ is a layered compound with metal layers sandwiched between adjacent insulating chalcogenide layers, this material has been considered to be electronically two-dimensional (2D). Here we report two new findings on WTe$_2$: (1) WTe$_2$ is electronically 3D with a mass anisotropy as low as $2$, as revealed by the 3D scaling behavior of the resistance $R(H,θ)=R(\varepsilon_θH)$ with $\varepsilon_θ=(\cos^2 θ+ γ^{-2}\sin^2 θ)^{1/2}$, $θ$ being the magnetic field angle with respect to c-axis of the crystal and $γ$ being the mass anisotropy; (2) the mass anisotropy $γ$ varies with temperature and follows the magnetoresistance behavior of the Fermi liquid state. Our results not only provide a general scaling approach for the anisotropic magnetoresistance but also are crucial for correctly understanding the electronic properties of WTe$_2$, including the origin of the remarkable 'turn-on' behavior in the resistance versus temperature curve, which has been widely observed in many materials and assumed to be a metal-insulator transition.
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Submitted 22 July, 2015; v1 submitted 6 June, 2015;
originally announced June 2015.
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Crumpling under an ambient pressure
Authors:
Y. C. Lin,
Y. L. Wang,
Y. Liu,
T. M. Hong
Abstract:
A pressure chamber is designed to study the crumpling process under an ambient force. The compression force and its resulting radius for the ball obey a power law with an exponent that is independent of the thickness and initial size of the sheet. However, the exponent is found to be material-dependent and less than the universal value, 0.25, claimed by the previous simulations. The power law be…
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A pressure chamber is designed to study the crumpling process under an ambient force. The compression force and its resulting radius for the ball obey a power law with an exponent that is independent of the thickness and initial size of the sheet. However, the exponent is found to be material-dependent and less than the universal value, 0.25, claimed by the previous simulations. The power law behavior disappears at high pressure when the compressibility drops discontinuously, which is suggestive of a jammed state.
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Submitted 30 April, 2008;
originally announced April 2008.
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Dielectric relaxation and polar phonon softening in relaxor ferroelectric PbMg_(1/3)Ta_(2/3)O_3
Authors:
S. Kamba,
D. Nuzhnyy,
S. Veljko,
V. Bovtun,
J. Petzelt,
Y. L. Wang,
J. Levoska,
M. Tyunina,
J. Macutkevic,
N. Setter,
J. Banys
Abstract:
Relaxor ferroelectric PbMg_1/3Ta_2/3O_3 ceramics and thin films were investigated by means of broad-band dielectric, time-domain terahertz (THz) and Fourier-transform infrared (IR) spectroscopy in the frequency range 100 Hz - 90 THz at temperatures 100 - 490 K, the THz and IR spectra were studied from 20 to 900K. Diffused and strongly temperature dependent peak in the complex permittivity is cau…
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Relaxor ferroelectric PbMg_1/3Ta_2/3O_3 ceramics and thin films were investigated by means of broad-band dielectric, time-domain terahertz (THz) and Fourier-transform infrared (IR) spectroscopy in the frequency range 100 Hz - 90 THz at temperatures 100 - 490 K, the THz and IR spectra were studied from 20 to 900K. Diffused and strongly temperature dependent peak in the complex permittivity is caused by a dielectric relaxation due to the dynamics of polar clusters. The relaxation appears below Burns temperature T_d in the THz range, slows down on cooling through the microwave and MHz range and anomalously broadens. The shortest and longest relaxation times of the distribution of relaxation times follow Arrhenius and Vogel-Fulcher law, respectively. The degree of B-site order has only a small influence on the parameters of the dielectric relaxation and almost no influence on the phonon parameters. Below T_m ~ 180K, the distribution of relaxation frequencies becomes broader than our experimental spectral range and frequency independent dielectric losses develop below 100 GHz in the spectra. Although the macroscopic crystal structure is cubic, IR spectra give evidence about the lower local symmetry which can be assigned to the presence of polar clusters below T_d. Infrared spectra above T_d still reveal more modes than predicted by selection rules in the paraelectric phase of the Fm-3m space group so that we suggest selection rules which take into account chemical inhomogeneity in the beta''-perovskite sublattice.
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Submitted 13 July, 2007;
originally announced July 2007.
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Landau thermodynamic potential for BaTiO_3
Authors:
Y. L. Wang,
A. K. Tagantsev,
D. Damjanovic,
N. Setter,
V. K. Yarmarkin,
A. I. Sokolov,
I. A. Lukyanchuk
Abstract:
In the paper, the description of the dielectric and ferroelectric properties of BaTiO_3 single crystals using Landau thermodynamic potential is addressed. Our results suggest that when using the sixth-power free energy expansion of the thermodynamic potential, remarkably different values of the fourth-power coefficient, β(the coefficient of P^4_i terms), are required to adequately reproduce the…
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In the paper, the description of the dielectric and ferroelectric properties of BaTiO_3 single crystals using Landau thermodynamic potential is addressed. Our results suggest that when using the sixth-power free energy expansion of the thermodynamic potential, remarkably different values of the fourth-power coefficient, β(the coefficient of P^4_i terms), are required to adequately reproduce the nonlinear dielectric behavior of the paraelectric phase and the electric field induced ferroelectric phase, respectively. In contrast, the eighth-power expansion with a common set of coefficients enables a good description for both phases at the same time. These features, together with the data available in literature, strongly attest to the necessity of the eighth-power terms in Landau thermodynamic potential of BaTiO_3. In addition, the fourth-power coefficients, βand ξ(the coefficient of P^2_i P^2_j terms), were evaluated from the nonlinear dielectric responses along [001], [011], and [111] orientations in the paraelectric phase. Appreciable temperature dependence was evidenced for both coefficients above T_C. Further analysis on the linear dielectric response of the single domain crystal in the tetragonal phase demonstrated that temperature dependent anharmonic coefficients are also necessary for an adequate description of the dielectric behavior in the ferroelectric phase. As a consequence, an eighth-power thermodynamic potential, with some of the anharmonic coefficients being temperature dependent, was proposed and compared with the existing potentials. In general, the potential proposed in this work exhibits a higher quality in reproducing the dielectric and ferroelectric properties of this prototypic ferroelectric substance.
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Submitted 22 June, 2007;
originally announced June 2007.
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Weak coupling Bardeen-Cooper-Schrieffer suerconductivity in the Electron-Doped Cuprate Superconductors
Authors:
L. Shan,
Y. Huang,
Y. L. Wang,
Shiliang Li,
Jun Zhao,
Pengcheng Dai,
Y. Z. Zhang,
C. Ren,
H. H. Wen
Abstract:
We use in-plane tunneling spectroscopy to study the temperature dependence of the local superconducting gap $Δ(T)$ in electron-doped copper oxides with various $T_c$'s and Ce-doping concentrations. We show that the temperature dependence of $Δ(T)$ follows the expectation of the Bardeen-Cooper-Schrieffer (BCS) theory of superconductivity, where $Δ(0)/k_{B}T_{c}\approx1.72\pm 0.15$ and $Δ(0)$ is t…
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We use in-plane tunneling spectroscopy to study the temperature dependence of the local superconducting gap $Δ(T)$ in electron-doped copper oxides with various $T_c$'s and Ce-doping concentrations. We show that the temperature dependence of $Δ(T)$ follows the expectation of the Bardeen-Cooper-Schrieffer (BCS) theory of superconductivity, where $Δ(0)/k_{B}T_{c}\approx1.72\pm 0.15$ and $Δ(0)$ is the average superconducting gap across the Fermi surface, for all the doping levels investigated. These results suggest that the electron-doped superconducting copper oxides are weak coupling BCS superconductors.
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Submitted 7 August, 2008; v1 submitted 9 March, 2007;
originally announced March 2007.
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Anharmonicity of BaTiO_3 single crystals
Authors:
Y. L. Wang,
A. K. Tagantsev,
D. Damjanovic,
N. Setter,
V. K. Yarmarkin,
A. I. Sokolov
Abstract:
By analyzing the dielectric non-linearity with the Landau thermodynamic expansion, we find a simple and direct way to assess the importance of the eighth order term. Following this approach, it is demonstrated that the eighth order term is essential for the adequate description of the para/ferroelectric phase transition of BaTiO_3. The temperature dependence of the quartic coefficient βis accord…
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By analyzing the dielectric non-linearity with the Landau thermodynamic expansion, we find a simple and direct way to assess the importance of the eighth order term. Following this approach, it is demonstrated that the eighth order term is essential for the adequate description of the para/ferroelectric phase transition of BaTiO_3. The temperature dependence of the quartic coefficient βis accordingly reconsidered and is strongly evidenced by the change of its sign above 165 C. All these findings attest to the strong polarization anharmonicity of this material, which is unexpected for classical displacive ferroelectrics.
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Submitted 27 March, 2006;
originally announced March 2006.
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Bonding Configurations and Collective Patterns of Ge Atoms Adsorbed on Si(111)-7x7
Authors:
Y. L. Wang,
H. -J. Gao,
H. M. Guo,
Sanwu Wang,
Sokrates T. Pantelides
Abstract:
We report scanning tunneling microscopy observations of Ge deposited on the Si(111)-7x7 surface for a sequence of sub-monolayer coverages. We demonstrate that Ge atoms replace so-called Si adatoms. Initially, the replacements are random, but distinct patterns emerge and evolve with increasing coverage, till small islands begin to form. Corner adatom sites in the faulted half unit cells are prefe…
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We report scanning tunneling microscopy observations of Ge deposited on the Si(111)-7x7 surface for a sequence of sub-monolayer coverages. We demonstrate that Ge atoms replace so-called Si adatoms. Initially, the replacements are random, but distinct patterns emerge and evolve with increasing coverage, till small islands begin to form. Corner adatom sites in the faulted half unit cells are preferred. First-principles density functional calculations find that adatom substitution competes energetically with a high-coordination bridge site, but atoms occupying the latter sites are highly mobile. Thus, the observed structures are indeed more thermodynamically stable.
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Submitted 14 February, 2005;
originally announced February 2005.
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Blue shift of yellow luminescence band in self-ion-implanted n-GaN nanowire
Authors:
S. Dhara,
A. Datta,
C. T. Wu,
Z. H. Lan,
K. H. Chen,
Y. L. Wang,
C. W. Hsu,
L. C. Chen,
H. M. Lin,
C. C. Chen,
Y. F. Chen
Abstract:
Optical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50-keV Ga+ focused ion beam (FIB) in the fluence range of 1x1014 -2x10^16 ions cm^-2 is used for the irradiation process. A blueshift is observed for the yellow luminescence (YL) band with increasing fluence. Donor-acceptor pair (DAP) model with emission involving shallow donor introduc…
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Optical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50-keV Ga+ focused ion beam (FIB) in the fluence range of 1x1014 -2x10^16 ions cm^-2 is used for the irradiation process. A blueshift is observed for the yellow luminescence (YL) band with increasing fluence. Donor-acceptor pair (DAP) model with emission involving shallow donor introduced by point-defect clusters related to nitrogen vacancies and probable deep acceptor created by gallium interstitial clusters is made responsible for the shift. High temperature annealing in nitrogen ambient restores the peak position of YL band by removing nitrogen vacancies.
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Submitted 2 February, 2004;
originally announced February 2004.
